CN113981372A - High-resistance film, manufacturing method thereof, touch display panel and display device - Google Patents

High-resistance film, manufacturing method thereof, touch display panel and display device Download PDF

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Publication number
CN113981372A
CN113981372A CN202111248202.4A CN202111248202A CN113981372A CN 113981372 A CN113981372 A CN 113981372A CN 202111248202 A CN202111248202 A CN 202111248202A CN 113981372 A CN113981372 A CN 113981372A
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China
Prior art keywords
resistance film
equal
substrate
coating
coated
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CN202111248202.4A
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Inventor
雷阳军
冯远明
李姣姣
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BOE Technology Group Co Ltd
Chengdu BOE Optoelectronics Technology Co Ltd
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BOE Technology Group Co Ltd
Chengdu BOE Optoelectronics Technology Co Ltd
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Priority to CN202111248202.4A priority Critical patent/CN113981372A/en
Publication of CN113981372A publication Critical patent/CN113981372A/en
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/10—Glass or silica
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/021—Cleaning or etching treatments
    • C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/081—Oxides of aluminium, magnesium or beryllium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/083—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/13338—Input devices, e.g. touch panels
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412—Digitisers structurally integrated in a display
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Human Computer Interaction (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Optics & Photonics (AREA)
  • Position Input By Displaying (AREA)

Abstract

The application provides a high-resistance film, a manufacturing method thereof, a touch display panel and a display device, wherein the sheet resistance of the high-resistance film is 108Above Euro/square, when the finger performs touch detection, the high-resistance film material does not release charges accumulated by finger touch due to certain resistance, and the touch performance is prevented from being influenced when the sheet resistance is too small; all in oneBy setting the sheet resistance of the high-resistance film at 109Under the Euro/Square, when static electricity is generated, high-voltage charges can be conducted away through the high-resistance film, the high-resistance film can play a role in releasing the static electricity, and the problem of poor antistatic capability caused by the fact that the charges are difficult to conduct away when the square resistance is too large is solved. The light transmittance of the high-resistance film is not less than 97.5% under the wavelength of 550nm, so that the high-resistance film has good light transmittance. Therefore, the high-resistance film in the embodiment of the application has good antistatic capacity and light transmittance, and does not affect the touch function. The performance requirements of the touch display panel adopting the In-Cell technology can be met.

Description

High-resistance film, manufacturing method thereof, touch display panel and display device
Technical Field
The application relates to the technical field of display, in particular to a high-resistance film, a manufacturing method thereof, a touch display panel and a display device.
Background
With the continuous development of Thin film transistor liquid crystal display (TFT-LCD) technology, the demand for light weight and thinning of the LCD is more and more strong, so that the development of In-Cell touch technology is promoted to realize the integration of the LCD panel and the touch panel. In-cell is to integrate the function of the touch panel into the TFT-LCD display panel, and the process is to directly form a high-resistance film on TFT glass, so that a glass substrate can be saved, the bonding process is omitted, the cost is reduced, the thickness and the weight of the display panel can be reduced, and the lightness and thinness are realized. However, the conventional high-resistance film has the problems of poor antistatic capability and low light transmittance, and affects the performance of the display panel.
Disclosure of Invention
The application provides a high-resistance film and a manufacturing method thereof, a touch display panel and a display device aiming at the defects of the prior art, and aims to solve the problems that the high-resistance film in the prior art is poor in antistatic capacity and low in light transmittance.
In a first aspect, embodiments of the present application provide a high resistance film comprising silicon oxide and metal oxide, the high resistance film having a sheet resistance greater than or equal to 108Euro/square, and is less than or equal toAt 109Ohm/square, transmittance at 550nm greater than or equal to 97.5%.
Optionally, the thickness of the high-resistance film is greater than or equal to 10 nanometers and less than or equal to 20 nanometers.
Optionally, the metal oxide includes at least one of indium oxide, zirconium oxide, tin oxide, zinc oxide, aluminum oxide, and tantalum oxide.
Optionally, the high-resistance film includes silicon oxide, indium oxide, and zirconium oxide, where the silicon oxide is greater than or equal to 1% and less than or equal to 10% by mass, the indium oxide is greater than or equal to 70% and less than or equal to 80% by mass, and the zirconium oxide is greater than or equal to 5% and less than or equal to 20% by mass
In a second aspect, an embodiment of the present application provides a touch display panel, including an array substrate and a high resistance film disposed on one side of the array substrate, where the high resistance film is the high resistance film provided in the embodiment of the present application.
In a third aspect, an embodiment of the present application provides a display device, including the touch display panel provided in the embodiment of the present application.
In a fourth aspect, an embodiment of the present application provides a method for manufacturing a high resistance film, including;
providing a coating device;
providing a substrate to be coated, and sequentially cleaning and baking the substrate to be coated;
putting a target material comprising silicon oxide and metal oxide and the baked substrate to be coated into the coating equipment, and coating a film on the substrate to be coated according to preset process parameters to form a high-resistance film, wherein the sheet resistance of the high-resistance film is more than or equal to 108Euro/square, and less than or equal to 109Ohm/square, transmittance at 550nm equal to or less than 97.5%.
Optionally, the process parameters include: the coating power is more than or equal to 2Kw and less than or equal to 3 Kw.
Optionally, the process parameters include: the temperature of the substrate to be plated is more than or equal to 80 ℃ and less than or equal to 100 ℃ during plating.
Optionally, the coating apparatus includes a coating chamber, the target including silicon oxide and metal oxide and the baked substrate to be coated are placed in the coating apparatus, and a high-resistance film is formed on the substrate to be coated according to preset process parameters, including:
putting the substrate to be coated into the coating chamber;
and filling working gas in the coating chamber, wherein the working gas comprises oxygen and argon, and the oxygen partial pressure of the working gas is more than or equal to 1% and less than or equal to 1.8%.
Optionally, filling the coating chamber with a working gas includes:
the pressure of the working gas is made to be greater than or equal to 0.1Pa and less than or equal to 1 Pa.
Optionally, the placing the substrate to be coated into the coating chamber includes:
the temperature of the coating chamber is enabled to be more than or equal to 100 ℃ and less than or equal to 185 ℃.
The beneficial technical effects brought by the technical scheme provided by the embodiment of the application comprise:
the high-resistance film in the embodiment of the application comprises silicon oxide and metal oxide, and the sheet resistance of the high-resistance film is greater than or equal to 108Euro/square, and less than or equal to 109Ohm/square, transmittance at 550nm greater than or equal to 97.5%. By setting the sheet resistance of the high-resistance film at 108On the Euro/square block, the touch performance is prevented from being influenced when the sheet resistance is too small; while the sheet resistance of the high-resistance film is set to 109Under the ohm/square, the high resistance film can play a role in releasing static electricity, and the problem of poor antistatic capability caused by difficulty in conducting away static electricity when the square resistance is too large is avoided. The light transmittance of the high-resistance film is not less than 97.5% under the wavelength of 550nm, so that the high-resistance film has good light transmittance. Therefore, the high-resistance film in the embodiment of the application has good antistatic capacity and light transmission, does not influence the touch function, and can meet the requirement of adoptionThe performance requirements of the touch display panel are met with In-Cell technology.
Additional aspects and advantages of the present application will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the present application.
Drawings
The foregoing and/or additional aspects and advantages of the present application will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
fig. 1 is a schematic structural diagram of a touch display panel according to an embodiment of the present disclosure;
fig. 2 is a schematic flow chart of a method for manufacturing a high-resistance film according to an embodiment of the present disclosure;
FIG. 3 is a schematic structural diagram of a coating apparatus provided in an embodiment of the present application;
FIG. 4 is a graph showing the relationship between the coating power and the high resistance;
FIG. 5 is a graph showing the relationship between oxygen partial pressure and high resistance film resistance under different film coating powers.
In the figure:
10-a touch display panel; 101-high resistance film; 102-an array substrate;
20-coating equipment; 201-upper chamber; 202-pre-buffer chamber; 203-a film coating chamber; 2031 — a first transition section; 2032-a film coating section; 2033-a second transition section; 204-a rear buffer chamber; 205-lower chamber.
Detailed Description
Reference will now be made in detail to the present application, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the same or similar parts or parts having the same or similar functions throughout. In addition, if a detailed description of the known art is not necessary for illustrating the features of the present application, it is omitted. The embodiments described below with reference to the drawings are exemplary only for the purpose of explaining the present application and are not to be construed as limiting the present application.
It will be understood by those within the art that, unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the prior art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
As used herein, the singular forms "a", "an", "the" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. It will be understood that when an element is referred to as being "connected" or "coupled" to another element, it can be directly connected or coupled to the other element or intervening elements may also be present. Further, "connected" or "coupled" as used herein may include wirelessly connected or wirelessly coupled. As used herein, the term "and/or" includes all or any element and all combinations of one or more of the associated listed items.
The inventors of the present application consider that, In a touch display panel employing In-Cell technology, characteristics of a high resistance film (including sheet resistance and light transmittance) affect the touch and display performance of the touch display panel. If the sheet resistance of the high-resistance film is too small, charge signals accumulated when a finger touches the surface of the display panel are easily conducted away, and the touch performance is influenced; if the sheet resistance of the high-resistance film is too large, a large amount of static electricity is accumulated on the surface of the panel due to friction (namely, the antistatic capability is poor) in the use process of the touch display panel, not only can the adsorbed impurities such as dust be attached to the surface of the display panel, but also the display panel can generate the problem of abnormal display due to the influence of an electrostatic electric field, and in addition, if the light transmittance of the high-resistance film is small, the display brightness of the display panel is low. The inventor of the application finds that the existing high-resistance film has the problems of poor antistatic capacity and low light transmittance, and influences the performance of the touch display panel.
The application provides a high-resistance film, a manufacturing method thereof, a touch display panel and a display device, and aims to solve the technical problems in the prior art.
The high-resistance film, the manufacturing method thereof, the touch display panel, and the display device provided in the embodiments of the present application are described in detail below with reference to the accompanying drawings.
The high-resistance film provided by the embodiment of the application comprises silicon oxide and metal oxide, and the sheet resistance of the high-resistance film is greater than or equal to 108Euro/square, and less than or equal to 109Ohm/square, transmittance at 550nm greater than or equal to 97.5%.
In the examples of the present application, the sheet resistance of the high-resistance film was set to 108Above Euro/square, when the finger performs touch detection, the high-resistance film material does not release charges accumulated by finger touch due to certain resistance, and the touch performance is prevented from being influenced when the sheet resistance is too small; while the sheet resistance of the high-resistance film is set to 109Under the Euro/Square, when static electricity is generated, high-voltage charges can be conducted away through the high-resistance film, the high-resistance film can play a role in releasing the static electricity, and the problem of poor antistatic capability caused by the fact that the charges are difficult to conduct away when the square resistance is too large is solved. The light transmittance of the high-resistance film is not less than 97.5% under the wavelength of 550nm, so that the high-resistance film has good light transmittance. Therefore, the high-resistance film In the embodiment of the application has good antistatic capability and light transmittance, does not affect the touch function, and can meet the performance requirement of a touch display panel adopting In-Cell technology.
The sheet resistance and the transmittance of the high-resistance film can be measured by related instruments. Specifically, the sheet resistance can be measured by measuring the surface impedance of the high-resistance film with a high-resistance film tester (e.g., MCP-HT800 high-resistance film tester), and the transmittance of the high-resistance film can be measured with an ultraviolet-visible spectrophotometer.
The inventors of the present application consider that the thickness of the high-resistance film affects the transmittance and the stability of the resistance. The larger the thickness of the high-resistance film is, the better the stability of the high-resistance film is, namely, the impedance of the high-resistance film does not change greatly after being stored or used for a period of time after being prepared. However, the larger the thickness of the high-resistance film, the smaller the transmittance thereof, and therefore, the larger the thickness of the high-resistance film, the display performance of the display panel is affected. Optionally, in the embodiment of the present application, the thickness of the high-resistance film is greater than or equal to 10 nanometers and less than or equal to 20 nanometers, so that the high-resistance film has better light transmittance while ensuring good stability.
It should be noted that the sheet resistance of the high resistance film is affected by the content of silicon oxide and metal oxide in the material composition of the high resistance film, and the metal oxide includes one or more of indium oxide, zirconium oxide, tin oxide, zinc oxide, aluminum oxide, and tantalum oxide, wherein the tantalum oxide may be tantalum pentoxide. The silicon oxide content affects the sheet resistance and hardness of the high-resistance film, and the higher the silicon oxide content is, the larger the sheet resistance of the high-resistance film is, and the higher the hardness is. The higher hardness is beneficial to improving the wear resistance of the film layer and the rigidity of the display panel. Optionally, the hardness of the high-resistance film is greater than or equal to 6H, and the surface hardness of the high-resistance film can be measured by a pencil hardness tester.
In one particular embodiment of the present application, the high-resistance film comprises the following material components: silicon oxide, indium oxide, and zirconium oxide, wherein: the content of silicon oxide is greater than or equal to 1% and less than or equal to 10% by mass, the content of indium oxide is greater than or equal to 70% and less than or equal to 80% by mass, and the content of zirconium oxide is greater than or equal to 5% and less than or equal to 20% by mass, so that both the resistance and the hardness of the high-resistance film can meet the requirements. The material composition of the high-resistance film may also include silicon oxide, tin oxide, zinc oxide, aluminum oxide, and tantalum pentoxide, and the specific material composition may be determined according to actual conditions, and is not described herein again.
Based on the same inventive concept, the present embodiment further provides a touch display panel 10, as shown in fig. 1, including an array substrate 102 and a high resistance film 101 disposed on one side of the array substrate 102. The array substrate includes a substrate (not shown in the figure) and a touch electrode (not shown in the figure) disposed on one side of the substrate, and the high-resistance film 101 is located on one side of the touch electrode away from the substrate, and plays roles of static electricity prevention and interference resistance. The high-resistance film 101 includes the high-resistance film in the above embodiments, so the touch display panel 10 has the same beneficial effects as the high-resistance film in the above embodiments, and the details are not repeated here.
Based on the same inventive concept, the present application further provides a display device, including the touch display panel 10 in the foregoing embodiment, so that the display device has the same beneficial effects as the touch display panel 10 in the foregoing embodiment, and details are not repeated herein.
Based on the same inventive concept, an embodiment of the present application further provides a method for manufacturing a high resistance film, as shown in fig. 2, including:
s101, providing a coating device;
s102, providing a substrate to be coated, and sequentially cleaning and baking the substrate to be coated;
s103, placing the target material comprising the silicon oxide and the metal oxide and the baked substrate to be coated into coating equipment, and coating a film on the substrate to be coated according to preset process parameters to form a high-resistance film, wherein the sheet resistance of the high-resistance film is more than or equal to 108Euro/square, and less than or equal to 109Ohm/square, transmittance at 550nm equal to or less than 97.5%.
Specifically, in the embodiment of the application, a vacuum magnetron sputtering method is adopted to form a high-resistance film on the surface of the substrate to be coated. Firstly, cleaning a substrate to be coated to remove impurities on the surface of the substrate to be coated. The cleaning process comprises brush cleaning and plasma cleaning (which means that the surface of a cleaned product is bombarded by plasma so as to achieve the cleaning purpose). After the substrate to be coated is cleaned, in order to remove water vapor on the surface of the substrate to be coated and avoid the influence on coating when water exists on the surface of the substrate to be coated, the substrate to be coated needs to be dried by an air knife, the substrate to be coated is subjected to infrared baking, and then the substrate to be coated is put into a pre-baking oven to be baked. The higher the temperature of the substrate to be coated is during baking, the more favorable the removal of the water vapor on the surface of the substrate is, but the damage of the substrate to be coated can be caused by the overhigh temperature. The operating parameters of the pre-baking oven can be set to 120 ℃/30 minutes, and can be determined according to actual conditions.
As shown in fig. 3, the coating apparatus 20 includes an upper wafer chamber 201, a pre-buffer chamber 202, a coating chamber 203, a post-buffer chamber 204, and a lower wafer chamber 205, which are communicated with each other. A roller driving device (not shown) may be disposed in the coating apparatus 20, so that the substrate to be coated may sequentially pass through the upper chamber 201, the pre-buffer chamber 202, the coating chamber 203, the post-buffer chamber 204, and the lower chamber 205. Optionally, the coating chamber 203 includes a first transition section 2031, a coating section 2032, and a second transition section 2033, and cold well devices (not shown) are disposed in the pre-buffer chamber 202 and the first transition section 2031. After the substrate to be coated is cleaned and baked, the substrate to be coated is placed in the upper chamber 201. The upper chamber 201 is subjected to preliminary vacuum evacuation. Then, the substrate to be coated enters the pre-buffer chamber 202, and further vacuum exhaust is performed in the pre-buffer chamber 202. And then, the substrate to be coated enters the coating chamber 203, and the substrate to be coated is coated according to preset process parameters, namely, a high-resistance film is formed on the substrate to be coated by the target comprising silicon oxide and metal oxide through magnetron sputtering.
The sheet resistance of the high-resistance film formed by the embodiment of the application is more than or equal to 108Euro/square, and less than or equal to 109Euro/square, the light transmittance at the wavelength of 550nm is equal to or more than 97.5%, the antistatic property and the permeability are good, and the touch performance of the touch display panel cannot be influenced. The substrate to be coated passes through the upper piece chamber 201 and the front buffer chamber 202 before entering the coating chamber 203, and vacuum exhaust treatment is carried out in both the upper piece chamber 201 and the front buffer chamber 202, so that the vacuum degree in the coating chamber 203 is favorably improved, the utilization rate of the target material during coating is improved, the manufacturing cost is saved, and the film forming quality is favorably improved. The power supply used by the coating device 20 may be a dc power supply or a dc pulse power supply, and optionally, a dc pulse power supply is used to reduce abnormal discharge during the sputtering coating process and improve the production stability.
It should be noted that the preset process parameters of the coating apparatus 20 include coating power, vehicle speed, gas composition and pressure in the coating chamber, and temperature of the substrate surface to be coated during coating. Wherein, the coating power and the vehicle speed influence the thickness of the high-resistance film. The larger the coating power and the vehicle speed are, the larger the thickness of the high-resistance film is. The larger thickness is beneficial to improving the stability of the high-resistance film, but when the thickness is too large, the impedance of the high-resistance film is lower, and the antistatic capability of the high-resistance film is reduced. As shown in fig. 4, the impedance of the high-resistance film gradually decreases with the increase of power, and when the power increases to a certain value, the change of the impedance becomes smaller and smaller, and the impedance tends to be stable. In the embodiment of the application, the coating power is more than or equal to 2Kw and less than or equal to 3Kw, so that the thickness value of the high-resistance film is in a reasonable range, good antistatic capacity is guaranteed, and the stability of impedance is improved. Optionally, the coating power is 2.6 Kw. The vehicle speed needs to be matched according to the coating power, optionally, the vehicle speed is between 0.83m/min and 1.2m/min, and can be determined according to actual conditions.
The inventor of the application considers that when the substrate to be coated is subjected to vacuum sputtering coating in the coating chamber, the working gas parameters (including gas components, pressure and other parameters) in the coating chamber can affect the stability of the film layer. In order to improve the stability of the high-resistance film and avoid the impedance of the high-resistance film from changing greatly after a period of film formation, in an embodiment of the present application, a target material including silicon oxide and metal oxide and a baked substrate to be coated are placed in a coating apparatus, and a film is coated on the substrate to be coated according to preset process parameters to form the high-resistance film, including:
putting a substrate to be coated into a coating chamber;
and filling working gas in the coating chamber, wherein the working gas comprises oxygen and argon, and the oxygen partial pressure of the working gas is more than or equal to 1% and less than or equal to 1.8%.
It should be noted that the working gas is the gas filled in the coating chamber when the substrate to be coated is coated in the coating chamber. The working gas is mainly composed of inert gas and oxygen, and the inert gas comprises argon or nitrogen. As shown in fig. 5, the inventors of the present application have found that, in the range of 0.0% to 2.5%, as the oxygen partial pressure increases, the impedance of the high-resistance film decreases first, and then gradually increases after decreasing to a certain value, and the change curve of the impedance is smile-shaped. The change curve is smoother at the bottom end, namely the change rate of the impedance is small, and the high-resistance film is more stable. Therefore, in order to improve the stability of the resist, the pressure of the working gas in the coating chamber is in the range of 0.1Pa to 1Pa, and the oxygen partial pressure of the working gas is in the range of 1% to 1.8%. Optionally, the pressure of the working gas in the coating chamber is 0.25Pa, and the oxygen partial pressure is 1.5%.
The inventors of the present application consider that the temperature of the substrate to be coated may also affect the impedance stability of the high resistance film when the substrate to be coated is subjected to vacuum sputter coating in the coating chamber. The higher the temperature of the substrate to be coated is, the better the moisture on the surface of the substrate can be removed, which is beneficial to improving the stability of the photoresist, but the substrate can be damaged due to the overhigh temperature. In the embodiment of the application, when the substrate to be coated is subjected to vacuum sputtering coating in the coating chamber, the temperature of the substrate to be coated is greater than or equal to 80 ℃ and less than or equal to 100 ℃, and optionally, the temperature of the substrate to be coated is about 90 ℃. In order to keep the temperature of the substrate to be coated in a proper range during coating, the substrate to be coated is put into a coating chamber in the embodiment of the application, and the method comprises the following steps: the temperature of the coating chamber is enabled to be more than or equal to 100 ℃ and less than or equal to 185 ℃, and the specific temperature setting of the coating chamber can be determined according to actual conditions.
The inventor of the application adopts three different process parameters to manufacture the high-resistance film, stores the high-resistance film formed by manufacturing the different process parameters for a period of time under specific conditions, and detects the impedance change of the high-resistance film after the high-resistance film is stored for a period of time. The specific process parameters are shown in table 1:
Figure BDA0003321820320000091
TABLE 1
5 high-resistance films are manufactured by adopting the process parameter 1. The specific process is as follows:
(1) preparing equipment: before film coating, the film coating equipment device is opened, and the empty frame is run for 1 to 2 hours to remove residual water vapor in the film coating equipment.
(2) Preparing a substrate to be coated: putting a substrate to be coated on a cleaning line for cleaning and drying, wherein the cleaning line is mainly subjected to processes of brush cleaning, plasma cleaning, air knife blow-drying, infrared baking and the like; and then placing the substrate to be coated into a pre-baking oven for baking at the baking temperature of 120 ℃/30 min.
(3) Film coating: and putting the baked substrate to be coated into coating equipment, and enabling the substrate to be coated to sequentially pass through an upper piece chamber, a front buffer chamber, a coating chamber, a rear buffer chamber and a lower piece chamber which are mutually connected to finish the coating process.
The change in sheet resistance values of the high resistance films after storing the 5 high resistance film samples prepared under specific conditions for six weeks is shown in table 2:
film-forming sheet resistance First week Second week The third week The fourth side The fifth week The sixth week
1 1.56E+08 1.59E+08 2.15E+08 2.46E+08 2.43E+08 3.84E+08 3.87E+08
2 1.23E+08 1.39E+08 1.46E+08 1.93E+08 1.62E+08 2.90E+08 2.55E+08
3 1.40E+08 1.38E+08 1.44E+08 1.46E+08 1.76E+08 2.62E+08 2.31E+08
4 1.50E+08 1.36E+08 1.06E+08 1.62E+08 1.82E+08 1.79E+08 1.81E+08
5 1.18E+08 1.52E+08 1.71E+08 1.84E+08 2.07E+08 2.26E+08 3.11E+08
TABLE 2
As shown in table 2, the high-resistance film manufactured by the process parameter 1 has a change rate of impedance within 10 times after being stored for six weeks, has good stability, and can meet actual requirements.
5 high-resistance films are manufactured by adopting the process parameter 2, and the specific process is as follows:
(1) preparing equipment: before film coating, the film coating equipment device is opened, and the empty frame is run for 1 to 2 hours to remove residual water vapor in the film coating equipment.
(2) Preparing a substrate to be coated: and (3) putting the substrate to be coated on a cleaning line for cleaning and drying, wherein the cleaning line is mainly subjected to processes of brush cleaning, plasma cleaning, air knife blow-drying, infrared baking and the like.
(3) Film coating: and putting the baked substrate to be coated into coating equipment, and enabling the substrate to be coated to sequentially pass through an upper piece chamber, a front buffer chamber, a coating chamber, a rear buffer chamber and a lower piece chamber which are mutually connected to finish the coating process.
The change of sheet resistance value of the high resistance film after storing the 5 prepared high resistance film samples under specific conditions for seven days is shown in table 3:
film-forming sheet resistance Day one The next day The third day The fourth day The fifth day Day six The seventh day
1 1.52E+08 1.92E+09 2.10E+10 3.55E+09 1.23E+10 6.07E+09 9.34E+08 1.30E+10
2 2.07E+08 1.29E+09 3.59E+10 3.15E+10 2.30E+09 5.26E+08 3.04E+08 3.19E+10
3 1.38E+08 1.44E+09 1.40E+10 8.54E+08 1.61E+09 2.35E+09 6.06E+08 6.13E+10
4 1.09E+08 6.16E+08 3.76E+09 1.13E+10 1.79E+09 1.79E+09 2.86E+10 2.19E+10
5 2.07E+08 1.39E+09 1.67E+10 4.87E+08 4.16E+08 4.16E+08 5.74E+08 5.58E+10
TABLE 3
As shown in table 3, the high-resistance film manufactured by the process parameter 2 has a significantly increased impedance after being stored for seven days, and the maximum impedance of one sample is increased by 400 times, which seriously affects the antistatic ability of the high-resistance film and cannot be used normally.
5 high-resistance films are manufactured by adopting the process parameter 3, and the specific process is as follows:
(1) preparing equipment: before film coating, the film coating equipment device is opened, and the empty frame is run for 1 to 2 hours to remove residual water vapor in the film coating equipment.
(2) Preparing a substrate to be coated: and (3) putting the substrate to be coated on a cleaning line for cleaning and drying, wherein the cleaning line is mainly subjected to processes of brush cleaning, plasma cleaning, air knife blow-drying, infrared baking and the like.
(3) Film coating: and putting the baked substrate to be coated into coating equipment, and enabling the substrate to be coated to sequentially pass through an upper piece chamber, a front buffer chamber, a coating chamber, a rear buffer chamber and a lower piece chamber which are mutually connected to finish the coating process.
After 5 prepared high resistance film samples were stored for four weeks under specific conditions, the change in sheet resistance values of the high resistance films is shown in table 4:
film-forming sheet resistance First week Second week The third week The fourth side
1 3.2E+08 4.1E+09 2.5E+09 7.4E+09 8.7E+09
2 3.2E+08 1.4E+09 3.7E+09 2.0E+10 3.6E+09
3 4.2E+08 2.8E+09 2.7E+09 1.4E+10 1.1E+10
4 2.9E+08 2.1E+09 2.1E+09 8.2E+10 3.1E+10
5 7.0E+08 3.5E+09 2.3E+09 5.7E+09 7.5E+09
TABLE 4
As shown in table 4, the high resistance film manufactured by the process parameter 3 has a significantly increased impedance after being stored for four weeks, and the maximum impedance of one sample is increased by 103 times, which seriously affects the antistatic ability of the high resistance film, and thus, the high resistance film cannot be normally used.
In conclusion, the high-resistance film manufactured by the process parameter 1 has small impedance change after being stored for a long time, has good stability, and is suitable for being used in actual production. When comparing three high-resistance films formed by different processes, the storage conditions of the three high-resistance films after film formation are the same.
By applying the embodiment of the application, at least the following beneficial effects can be realized:
1. in the examples of the present application, the sheet resistance of the high-resistance film was set to 108Above Euro/square, when the finger performs touch detection, the high-resistance film material does not release charges accumulated by finger touch due to certain resistance, and the touch performance is prevented from being influenced when the sheet resistance is too small; while the sheet resistance of the high-resistance film is set to 109Under the Euro/Square, when static electricity is generated, high-voltage charges can be conducted away through the high-resistance film, the high-resistance film can play a role in releasing the static electricity, and the problem of poor antistatic capability caused by the fact that the charges are difficult to conduct away when the square resistance is too large is solved. The light transmittance of the high-resistance film is not less than 97.5% under the wavelength of 550nm, so that the high-resistance film has good light transmittance. Therefore, the high-resistance film In the embodiment of the application has good antistatic capability and light transmittance, does not affect the touch function, and can meet the performance requirement of a touch display panel adopting In-Cell technology.
2. In an embodiment of the present application, the high-resistance film comprises the following material components: the high-resistance film comprises silicon oxide, indium oxide and zirconium oxide, wherein the mass percent of the silicon oxide is more than or equal to 1% and less than or equal to 10%, the mass percent of the indium oxide is more than or equal to 70% and less than or equal to 80%, and the mass percent of the zirconium oxide is more than or equal to 5% and less than or equal to 20%, so that the resistance and the hardness of the high-resistance film can meet the requirement.
3. In the embodiment of the application, the substrate to be coated is cleaned before coating, so that impurities on the surface of the substrate to be coated can be removed, and the film forming quality after coating is improved. The substrate to be coated is baked after being cleaned, so that water vapor on the surface of the substrate to be coated can be removed, and the influence on coating is avoided.
4. In the embodiment of the application, the coating power is more than or equal to 2Kw and less than or equal to 3Kw, so that the thickness value of the high-resistance film is in a reasonable range, good antistatic capacity is guaranteed, and the stability of impedance is improved.
5. The working gas composed of oxygen and argon is filled in the coating chamber during coating, the pressure of the working gas is greater than or equal to 0.1Pa and less than or equal to 1Pa, and the oxygen partial pressure of the working gas is greater than or equal to 1% and less than or equal to 1.8%, so that the stability of the high-resistance film is improved, and the impedance of the high-resistance film is prevented from being greatly changed after a period of time to influence the antistatic capacity.
6. In the embodiment of the application, when the substrate to be coated is subjected to vacuum sputtering coating in the coating chamber, the temperature of the substrate to be coated is greater than or equal to 80 ℃ and less than or equal to 100 ℃, and the water vapor on the surface of the substrate can be better removed, so that the stability of the photoresist film is improved, and the damage to the substrate caused by overhigh temperature is avoided.
In the description of the present application, it is to be understood that the terms "center", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience in describing the present application and simplifying the description, but do not indicate or imply that the referred device or element must have a particular orientation, be constructed in a particular orientation, and be operated, and thus should not be construed as limiting the present application.
The terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present application, "a plurality" means two or more unless otherwise specified.
In the description herein, particular features, structures, materials, or characteristics may be combined in any suitable manner in any one or more embodiments or examples.
The foregoing is only a partial embodiment of the present application, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present application, and these modifications and decorations should also be regarded as the protection scope of the present application.

Claims (12)

1. A high-resistance film comprising silicon oxide and metal oxide, wherein the sheet resistance of the high-resistance film is 10 or more8Euro/square, and less than or equal to 109Ohm/square, transmittance at 550nm greater than or equal to 97.5%.
2. The high resistance film according to claim 1, wherein the thickness of the high resistance film is greater than or equal to 10 nm and less than or equal to 20 nm.
3. The high resistance film according to claim 2, wherein the metal oxide comprises at least one of indium oxide, zirconium oxide, tin oxide, zinc oxide, aluminum oxide, tantalum oxide.
4. The high-resistance film according to claim 3, wherein the high-resistance film comprises silicon oxide, indium oxide, and zirconium oxide, the silicon oxide is contained in an amount of 1% by mass or more and 10% by mass or less, the indium oxide is contained in an amount of 70% by mass or more and 80% by mass or less, and the zirconium oxide is contained in an amount of 5% by mass or more and 20% by mass or less.
5. A touch display panel, comprising an array substrate and a high resistance film disposed on one side of the array substrate, wherein the high resistance film is the high resistance film according to any one of claims 1 to 4.
6. A display device comprising the touch display panel according to claim 5.
7. A method for manufacturing a high-resistance film is characterized by comprising the following steps of;
providing a coating device;
providing a substrate to be coated, and sequentially cleaning and baking the substrate to be coated;
putting a target material comprising silicon oxide and metal oxide and the baked substrate to be coated into the coating equipment, and coating a film on the substrate to be coated according to preset process parameters to form a high-resistance film, wherein the sheet resistance of the high-resistance film is more than or equal to 108Euro/square, and less than or equal to 109Ohm/square, transmittance at 550nm equal to or less than 97.5%.
8. The method of manufacturing of claim 7, wherein the process parameters include: the coating power is more than or equal to 2Kw and less than or equal to 3 Kw.
9. The method of manufacturing of claim 7, wherein the process parameters include: the temperature of the substrate to be plated is more than or equal to 80 ℃ and less than or equal to 100 ℃ during plating.
10. The method according to claim 7, wherein the coating apparatus comprises a coating chamber, and the step of placing a target material comprising silicon oxide and metal oxide and a baked substrate to be coated in the coating apparatus and coating the substrate to be coated with a high-resistance film according to predetermined process parameters comprises:
putting the substrate to be coated into the coating chamber;
filling working gas in the film coating chamber, wherein the working gas comprises oxygen and argon, and the oxygen partial pressure of the working gas is more than or equal to 1% and less than or equal to 1.8%.
11. The manufacturing method of claim 10, wherein the filling of the coating chamber with a working gas comprises:
the pressure of the working gas is made to be greater than or equal to 0.1Pa and less than or equal to 1 Pa.
12. The method according to claim 10, wherein the placing the substrate to be coated in the coating chamber comprises:
the temperature of the coating chamber is enabled to be more than or equal to 100 ℃ and less than or equal to 185 ℃.
CN202111248202.4A 2021-10-26 2021-10-26 High-resistance film, manufacturing method thereof, touch display panel and display device Pending CN113981372A (en)

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CN112209626A (en) * 2020-09-22 2021-01-12 长沙壹纳光电材料有限公司 High-resistance film and preparation method and application thereof
JP2021075788A (en) * 2019-11-05 2021-05-20 三菱マテリアル株式会社 High resistance transparent film

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