CN104775102B - The vacuum coating system that volume to volume magnetic control sputtering cathode is combined with column multi-arc source - Google Patents

The vacuum coating system that volume to volume magnetic control sputtering cathode is combined with column multi-arc source Download PDF

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Publication number
CN104775102B
CN104775102B CN201510225302.3A CN201510225302A CN104775102B CN 104775102 B CN104775102 B CN 104775102B CN 201510225302 A CN201510225302 A CN 201510225302A CN 104775102 B CN104775102 B CN 104775102B
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China
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magnetic control
volume
control sputtering
sputtering cathode
column multi
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CN104775102A (en
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陈晓红
孙卓
朴贤卿
张哲娟
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Shanghai Industrial Institute For Research And Technology
East China Normal University
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Shanghai Industrial Institute For Research And Technology
East China Normal University
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Abstract

The present invention relates to technical field of vacuum plating, the vacuum coating system that specifically a kind of volume to volume magnetic control sputtering cathode is combined with column multi-arc source.It is characterized in that:One end connection of coating chamber unreels room, the other end connection winding room of coating chamber, and coating chamber and unreels the junction and coating chamber and the junction of winding room of room be respectively equipped with can be by the elongate slot of flexible substrate;The center of described coating chamber is provided with chill roll, and linear plasma source, magnetic control sputtering cathode and column multi-arc source are respectively equipped with front of chill roll, and linear plasma source, magnetic control sputtering cathode and column multi-arc source are respectively adopted baffle plate and separated.Compared with the existing technology, linear plasma source, magnetic control sputtering cathode, the cavity corresponding to column multi-arc source, using semi open model, independently ventilate, semi open model cavity air pressure and gas component are suitably adjustable, are conducive to depositing superior in quality film, and save equipment investment cost very well.

Description

The vacuum coating system that volume to volume magnetic control sputtering cathode is combined with column multi-arc source
Technical field
The present invention relates to technical field of vacuum plating, specifically a kind of volume to volume magnetic control sputtering cathode and column multi sphere The vacuum coating system that source is combined.
Background technology
Volume to volume plated film vacuum equipment main deposited metal, metal oxide, gold on flexible substrate under vacuum Belong to the film layers such as nitride, metal carbides, nonmetallic compound and polymer.It is widely used in flexible solar battery, The fields such as flexible photoelectric device, flexible PCB, battery diaphragm, capacitor dielectric, superconduction, packing film and decoration film coating.It is existing Volume to volume vacuum coating equipment species is various, can be divided mainly into thermal evaporation coating system from technology, magnetron sputtering deposition system, many Arc ionization depositing system, ion beam depositing system, chemical gas-phase deposition system(CVD)Deng.Common flexible substrate generally has soft Property stainless steel substrate, flexible glass substrate and polymer matrix film etc..In order to improve the adhesive force of film and flexible substrate, flexible base Piece is in addition to strict cleaning, and it is extremely important that using plasma, which handles substrate surface to improving adhesive force,.Therefore, develop Volume to volume plated film vacuum equipment according to the need for technique, it usually needs the device of increase corona treatment flexible substrate.
The vacuum system of the existing existing single-chamber body of volume to volume plated film vacuum equipment, also there is Multicarity vacuum system.Single-chamber Body vacuum system is generally unreeled, plated film and winding function are concentrated in a vacuum cavity.Because flexible substrate is unreeling process In would generally release many gases, the body vacuum of cavity can not ensure, the foreign gas of releasing is likely to participate in film Reaction in deposition, influences film quality.Therefore, in the case of higher to thin film deposition quality requirement, generally use and unreel Room, coating chamber and winding room are provided separately, to improve thin layer quality and operating efficiency.
Would generally be installed in multiple membrane systems, coating chamber many set depositing systems due to needing to deposit simultaneously, to realize multiple film The combination of system.Sometimes the sedimentary condition such as air pressure, gas component of different membrane systems can be different, lead in existing vacuum coating system Frequently with multiple plated film cavitys are configured, the completely isolated of different coated film deposition cavitys is realized, in order to avoid target as sputter or evaporation process In cross pollution to film layer.Completely isolated vacuum coating cavity, although realize the intersection in film deposition process very well Pollution problem, but equipment investment and energy resource consumption can also be significantly greatly increased simultaneously.
The content of the invention
The present invention is to overcome the deficiencies in the prior art mutually to be tied there is provided a kind of volume to volume magnetic control sputtering cathode and column multi-arc source The vacuum coating system of conjunction, solves cross-contamination issue present in film deposition process, while equipment investment can be greatly reduced And energy resource consumption.
To achieve the above object, the vacuum coating that a kind of volume to volume magnetic control sputtering cathode is combined with column multi-arc source is designed System, including unreel room, coating chamber, winding room, flexible substrate, it is characterised in that:One end connection of coating chamber unreels room, plated film The other end connection of room winds room, and the junction of junction and coating chamber and winding room of the coating chamber with unreeling room is set respectively Having can be by the elongate slot of flexible substrate;The center of described coating chamber is provided with chill roll, distinguishes positioned at the front of chill roll Provided with linear plasma source, magnetic control sputtering cathode and column multi-arc source, and linear plasma source, magnetic control sputtering cathode and Column multi-arc source is respectively adopted baffle plate and separated.
Described unreeling is indoor provided with unreeling shaft.
Described winding interior is provided with Scroll.
Described unreels room, coating chamber, winding interior provided with some guide rollers for flexible substrate guide effect.
Independent extract system is respectively adopted in described linear plasma source, magnetic control sputtering cathode and column multi-arc source.
Described linear plasma source, magnetic control sputtering cathode and column multi-arc source separates out semi open model work with baffle plate Space, its operating air pressure is more than the air pressure of neighbouring vacuum cavity.
Described isolation linear plasma source, magnetic control sputtering cathode and column multi-arc source uses baffle plate into double layer hollow knot Structure.
Described linear plasma source, magnetic control sputtering cathode and column multi-arc source is laid out in semicircular arc and set.
The present invention compared with the existing technology, linear plasma source, magnetic control sputtering cathode, the chamber corresponding to column multi-arc source Body, using semi open model, independently ventilates, and semi open model cavity air pressure and gas component are suitably adjustable, therefore, thin depositing In the case of the required gas of film, component are more or less the same, be conducive to depositing superior in quality film, and save equipment investment very well Cost.
The particle that the ionization of column multi-arc source is produced has the characteristics of energy is high, and depositional coating speed is fast, and adhesive force is strong, crystallization Property good and crystal grain it is big the advantages of, magnetic control sputtering cathode sputtering produces that particle energy is relatively low, and film adhesion is compared to multi-arc source Deposition technique is low, and depositional coating surface is more smooth and smooth.
Brief description of the drawings
Fig. 1 is schematic structural view of the invention.
Referring to Fig. 1,1 is unreels room, and 2 be unreeling shaft, and 3 be flexible substrate, and 5 be baffle plate, and 6 be chill roll, 7 for it is linear wait from Daughter source, 8 be magnetic control sputtering cathode, and 9 be column multi-arc source, and 10 be guide roller, and 11 be coating chamber, and 12 be elongate slot, and 14 are Room is wound, 15 be Scroll.
Embodiment
The invention will now be described in further detail with reference to the accompanying drawings.
As shown in figure 1, one end connection of coating chamber 11 unreels room 1, the other end connection of coating chamber 11 winds room 14, and The junction of coating chamber 11 and the junction and coating chamber 11 and winding room 14 that unreel room 1 is respectively equipped with can be by flexible substrate 3 Elongate slot 12;The center of described coating chamber 11 is provided with chill roll 6, is respectively equipped with positioned at the front of chill roll 6 linear etc. Plasma source 7, magnetic control sputtering cathode 8 and column multi-arc source 9, and linear plasma source 7, magnetic control sputtering cathode 8 and column Multi-arc source 9 is respectively adopted baffle plate 5 and separated.
Unreel and unreeling shaft 2 is provided with room 1.
Wind and Scroll 15 is provided with room 14.
Unreel room 1, coating chamber 11, wind in room 14 provided with some guide rollers 10 for flexible substrate guide effect.
Independent extract system, gas is respectively adopted in linear plasma source 7, magnetic control sputtering cathode 8 and column multi-arc source 9 Flow difference is adjustable.
It is empty that linear plasma source 7, magnetic control sputtering cathode 8 and column multi-arc source 9 separate out semi open model work with baffle plate 5 Between, its operating air pressure is more than the air pressure of neighbouring vacuum cavity.
Isolate linear plasma source 7, magnetic control sputtering cathode 8 and column multi-arc source 9 and use baffle plate 5 into double layer hollow knot Structure, baffle plate uses distance between double-decker, two layers to be more than 5 centimetres, and the working gas from working cavity is diffused into baffle plate At hollow structure, it can quickly take away and prevent gas from continuing to diffuse into adjacent semi open model working space.
Linear plasma source 7, magnetic control sputtering cathode 8 and column multi-arc source 9 are laid out in semicircular arc and set.
Unreel that be respectively equipped between room 1, coating chamber 11, the winding cavity of room 14 3 can be by the long and narrow seam of flexible substrate 3 Gap 12;The elongate slot 12 can preferably prevent that the gas between cavity from disturbing.
A set of linear plasma source 7 is placed in coating chamber 11, a set of magnetic control sputtering cathode 8 and a set of column is at least configured Multi-arc source 9 etc.;Described linear plasma source 7, magnetic control sputtering cathode 8 and column multi-arc source 9 can separately provide source of the gas, gas Species and gas flow can Independent adjustables;Representative gases have Ar, N2And O2Deng.
Property plasma source 7, magnetic control sputtering cathode 8 and column multi-arc source 9 are separated with fender plate 5 with whole vacuum chamber; Also separated between linear plasma source 7, magnetic control sputtering cathode 8 and column multi-arc source 9 with fender plate 5, form semi open model Substrate processing chambers and thin film deposition chamber.
Semi open model substrate processing chambers and thin film deposition chamber, its body vacuum is not by the isolation effect of baffle plate 5, with whole plating The body vacuum of film room 11 is consistent.
Magnetic control sputtering cathode 8 and column multi-arc source 9 in coating chamber 11, can need to install many set magnetron sputterings the moon according to technique Semi open model chamber is still isolated using baffle plate 5 between pole 8 and column multi-arc source 9, magnetic control sputtering cathode 8, between column multi-arc source 9 Room.
Many set magnetic control sputtering cathodes 8 and column multi-arc source 9 are installed, being needed according to film layer technique can be flexible in coating chamber 11 Combination is installed, and magnetic control sputtering cathode 8 and the depositional coating of column multi-arc source 9 can be used successively;Also can be first with using magnetic after column multi-arc source 9 Control sputter cathode 8 is sequentially depositing film layer;Also can two kinds of deposition techniques be used alternatingly and prepare film.
Operating air pressure and gas component in semi open model substrate processing chambers and thin film deposition chamber, its semi open model cavity, Operating air pressure and component characteristic particularly near linear plasma source 7, magnetic control sputtering cathode 8 and column multi-arc source 9, pass through Baffle plate 5 is isolated, and can well be kept.
Vacuum coating system, flexible substrate 3 used can select flexible stainless steel, flexible glass, flexible polymer such as PET, PI, PP, PE, PPO etc..
The chill roll 6 contacted with flexible substrate 3, with cooling system function, can guarantee that flexible polymer-based piece for a long time Motion, corona treatment, magnetron sputtering deposition and column multi sphere deposition film not temperature distortion;Chill roll 6 is by cooling system System, roll surface temperature is adjustable from normal temperature to -20 degree.
Magnetic control sputtering cathode 8 and column multi-arc source 9, can distinguish deposited metal, metal alloy, metal oxide, metal nitrogen The films such as compound, metal oxynitride, metal carbides, carbonitride;Metal oxide, metal nitride, metal nitrogen Oxide and carbonitride film can use direct sputtering target material deposition film, can also use reactive sputtering metal, metal It is thin that alloy or metal carbides deposit metal oxide, metal nitride, metal oxynitride and carbonitride etc. Film.
The plasma components that magnetic control sputtering cathode 8 and column multi-arc source 9 are produced can pass through optical diagnostic of plasma system System monitoring, dynamic monitoring change of component is to films such as metal oxide, metal nitride, metal oxynitride and carbonitrides Layer influence.
Embodiment one
Unreel room 1, coating chamber 11 and winding room 14 independent vacuum extract system is respectively adopted, and set can pass through it is soft Property substrate 3 elongate slot 12, greatly reduce the foreign gas that flexible substrate 3 discharges during unreeling dirty to coating chamber Dye, it is ensured that coating quality.Chill roll 6 is used in coating chamber 11, it is ensured that polymer flexibility substrate is handled in plasma source 7, magnetic Control during sputter cathode 8 and the deposition film of column multi-arc source 9, will not be deformed because heated, it is ensured that the film layer on flexible substrate 3 Quality.Adjustable baffle plate 5 in coating chamber 11 so that plasma source 7, magnetic control sputtering cathode 8 and the difference shape of column multi-arc source 9 Into each independent semi open model chamber, the structure ensure that body vacuum and whole coating chamber in semi open model chamber 11 is consistent, and independent gas supply system is respectively adopted in plasma source 7, magnetic control sputtering cathode 8 and column multi-arc source 9 so that work Making gas can be trapped near plasma source 7, magnetic control sputtering cathode 8 and column multi-arc source to greatest extent, form local work Making air pressure and gas component has the adjustable function in part, is conducive to the running parameter such as flow, gas of flexible modulation depositional coating The parameter such as pressure and gas component, while film quality is improved, moreover it is possible to reduce gas consumption.
- 20 degree can reach using the roll surface temperature of chill roll 6 in coating chamber 11, can guarantee that the long-time of flexible substrate 3 in length Time rotates, corona treatment and film deposition process are notheated metaboly.Using unreel room 1, coating chamber 11 and receive Electrode, guide roller 10 and the tension control system in room 14 are rolled up, flexible substrate is adjustable under 0.5-8 m/min.In sputtering sedimentation In film layer, the body vacuum level requirements of coating chamber are less than 1x10-3 Pa。
Typical metal-oxide film, which can be deposited, TiO2、AZO、ZnO、SiO2And Al2O3Deng typical metal film has Al, Cr, Ni, Ag, Ti, Cu, NiCr etc..On flexible stainless steel substrate use column multi-arc source Direct precipitation Cr film layers, Cr layer and The adhesion of stainless steel substrate, which is significantly better than, uses Cr layers of magnetic control sputtering cathode Direct precipitation, but the Cr surfaces phase deposited with multi-arc source It is more coarse than magnetron sputtering deposition Cr film layers, and there is drop phenomenon in surface.On flexible stainless steel substrate, using column multi sphere Source and magnetic control sputtering cathode are sequentially depositing Cr film layers, and Cr films are while good adhesion is kept, and Cr film surfaces are more put down It is whole and smooth, hence it is evident that to improve Cr film qualities and adhesive force.

Claims (8)

1. the vacuum coating system that a kind of volume to volume magnetic control sputtering cathode is combined with column multi-arc source, including unreel room, plated film Room, winding room, flexible substrate, it is characterised in that:Coating chamber(11)One end connection unreel room(1), coating chamber(11)It is another End connection winding room(14), and coating chamber(11)With unreeling room(1)Junction and coating chamber(11)With winding room(14)'s Junction is respectively equipped with can be by flexible substrate(3)Elongate slot(12);Described coating chamber(11)Center provided with cooling Roller(6), positioned at chill roll(6)Front be respectively equipped with linear plasma source(7), magnetic control sputtering cathode(8)And column multi sphere Source(9), and linear plasma source(7), magnetic control sputtering cathode(8)And column multi-arc source(9)Baffle plate is respectively adopted(5)Every Open.
2. the vacuum coating system that volume to volume magnetic control sputtering cathode according to claim 1 is combined with column multi-arc source, It is characterized in that:Described unreels room(1)It is interior to be provided with unreeling shaft(2).
3. the vacuum coating system that volume to volume magnetic control sputtering cathode according to claim 1 is combined with column multi-arc source, It is characterized in that:Described winding room(14)It is interior to be provided with Scroll(15).
4. the vacuum coating that the volume to volume magnetic control sputtering cathode according to claim 1 or 2 or 3 is combined with column multi-arc source System, it is characterised in that:Described unreels room(1), coating chamber(11), winding room(14)It is interior to be led provided with some for flexible substrate To the guide roller of effect(10).
5. the vacuum coating system that volume to volume magnetic control sputtering cathode according to claim 1 is combined with column multi-arc source, It is characterized in that:Described linear plasma source(7), magnetic control sputtering cathode(8)And column multi-arc source(9)Independence is respectively adopted Extract system.
6. the vacuum coating system that volume to volume magnetic control sputtering cathode according to claim 1 is combined with column multi-arc source, It is characterized in that:Described linear plasma source(7), magnetic control sputtering cathode(8)And column multi-arc source(9)Use baffle plate(5)Every Semi open model working space is outputed, its operating air pressure is more than the air pressure of neighbouring vacuum cavity.
7. the vacuum coating system that volume to volume magnetic control sputtering cathode according to claim 1 is combined with column multi-arc source, It is characterized in that:Isolate linear plasma source(7), magnetic control sputtering cathode(8)And column multi-arc source(9)Using baffle plate(5)Into Double layer hollow structure.
8. the vacuum coating system that volume to volume magnetic control sputtering cathode according to claim 1 is combined with column multi-arc source, It is characterized in that:Described linear plasma source(7), magnetic control sputtering cathode(8)And column multi-arc source(9)In semicircular arc cloth Office is set.
CN201510225302.3A 2015-05-04 2015-05-04 The vacuum coating system that volume to volume magnetic control sputtering cathode is combined with column multi-arc source Expired - Fee Related CN104775102B (en)

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CN105671508B (en) * 2016-03-31 2019-04-30 成都西沃克真空科技有限公司 A kind of roll-to-roll magnetic control sputtering vacuum coating device
CN107523797A (en) * 2017-07-28 2017-12-29 上海空间电源研究所 The volume to volume preparation method of cable elemental oxygen protection oxidation silicon cladding between flexible board
CN108374150B (en) * 2018-05-14 2020-02-14 湖南菲尔姆真空设备有限公司 Vacuum coating equipment
CN114086147B (en) * 2021-11-19 2024-01-26 合肥中隐新材料有限公司 Winding type vacuum coating equipment for preparing photonic crystal film
CN115261814B (en) * 2022-07-22 2024-04-05 镇江市德利克真空设备科技有限公司 Adjustable magnetron sputtering coating equipment

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