CN109991706B - 提供波导及消散场耦合光子检测器的方法及设备 - Google Patents
提供波导及消散场耦合光子检测器的方法及设备 Download PDFInfo
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Abstract
本申请实施例涉及一种提供波导及消散场耦合光子检测器的方法及设备。所描述的实施例包含用于电子‑光子装置的光学连接,例如光学波导及用于从所述光学波导接收光学波且将所述光学波引导到共同点的光子检测器。还描述制作此类连接的方法。
Description
本申请是申请日为2013年04月09日,申请号为“201380020795.6”,而发明名称为“提供波导及消散场耦合光子检测器的方法及设备”的发明专利申请的分案申请。
技术领域
本文中所揭示的实施例一般来说涉及电子装置(例如,半导体装置)的领域,且更特定来说涉及电子-光子装置。
背景技术
光学传输可用作单独集成电路芯片之间(芯片间连接)及同一芯片上的组件内(芯片内连接)的通信手段。电子-光子装置(也称为光电子装置)为一类能够提供、控制及/或检测光的电子装置。电子-光子装置包含电子功能及光子功能两者。响应于例如半导体装置的电子装置的更苛刻的通信带宽、能量消耗及性能标准,电子装置越来越多地与光学电路/电气电路集成以形成称作电子-光子集成电路的类型的电子-光子装置。
举例来说,在半导体工业中,光子装置具有各种应用,包含芯片内、计算机板的芯片之间及计算机板之间的通信。在经由光学互连件的芯片对芯片通信中,可将电路板上的每一芯片与光子-电子发射器-接收器电路介接,其中两个芯片经由光学波导可操作地连接。同样地,可使用光学波导来连接芯片内的组件,例如在集成光学源与光子检测器之间。电子-光子装置的另一益处是,可使用现有制造工艺(例如互补金属氧化物半导体(CMOS)半导体制造工艺)在相同或不同衬底上同时形成执行纯光学功能、纯电功能及光电子功能的元件。
图1图解说明常规电子-光子装置100的一个实例的框图。电子-光子装置100可用于可操作地连接单个芯片或衬底上的元件(例如集成电路)或单独衬底上的装置。
电子-光子装置100包含经配置以产生光学束的光源120。举例来说,光源120可为相干光源,例如激光器(例如混合硅激光器或砷化镓激光器)、相干发光二极管(LED)、超发光二极管或此项技术中已知的其它适当光源。相干光源为通常具有为一致且同相的窄波长带的光源。光源120可经配置以输出具有在大约1,200nm到1,550nm的范围内的波长的光学束。
光学波导130将光源120的光学束连接到调制器140(例如具有PIN结的光学环形谐振器)。调制器140用所接收的电数据145调制所接收的光束且沿着另一波导150输出经调制光学数据。调制器140也能够在不进行调制的情形下使光学束通过,例如当所述光学束已由同一电子-光子系统中的另一调制器140调制时。
光子检测器160包含经配置以接收及收集经调制光学束的半导体材料162(例如,锗(Ge)、硅锗(SiGe)、砷化铟镓(InGaAs)、磷酸铟(InP)或其它适当材料)。将电响应发射到一或多个电极164,电极164在接收到经调制光学数据的波长的能量之后即刻产生电响应并为所接收的光学数据提供外部电连接。
图2A及2B分别展示光学波导150a、150b的两个实例的横截面图。光学波导150a、150b两者包含相应内芯152a、152b以及外包层154a、154b。
光学波导150a(图2A)为椭圆形状的光学波导。光学波导150a代表可形成为光纤(例如单模或多模光纤)或与其它光子装置(例如,光源120、光子检测器160等)形成到其的衬底或芯片分离的其它元件的波导。举例来说,外芯154a可为二氧化硅(SiO2)材料。举例来说,内芯152a可为掺杂有杂质(例如GeO2)的硅(Si)材料(例如SiO2)且与外包层154a相比通常具有极小尺寸。举例来说,内芯152a可具有大约9μm的半径,而外包层154a可具有大约125μm的半径。
光学波导150b(图2B)为矩形形状的波导。光学波导150b代表可使用光刻处理形成于半导体(例如硅衬底、绝缘体上硅(SOI)衬底或印刷电路板(PCB))上的集成光学波导。举例来说,形成于充当外包层154b的SiO2衬底上的集成光学波导150b可具有由(举例来说)硅(Si)材料形成的矩形内芯152b。内芯152b可具有大约300nm的直径,而外包层154b为其上形成光学波导150b的较大衬底的部分且可具有大约1μm或可能大得多的直径。
通过光学束的电磁波在较高折射率内芯152a、152b与较低折射率外包层154a、154b之间的界面处的内部反射而发生对穿过波导150a、150b的光学束的波导引。内芯152a、152b由具有比形成外包层154a、154b的材料的折射率大的折射率的材料形成。内芯152a、152b的折射率可仅稍高于(例如,1%)外包层154a、154b的折射率或可显著更高(称为“高对比波导”)以便提供较大全内折射(TIR)。举例来说,内芯152a、152b可由具有大约3.5的折射率的硅(Si)材料形成,而外包层154a、154b可由具有大约1.5的折射率的二氧化硅(SiO2)材料形成。
应理解,外包层154a、154b可由具有比内芯152a、152b的折射率低的折射率的任何材料形成。举例来说,可使用具有大约1.0的折射率的环境空气作为用于具有Si内芯的光学波导150的外包层且因此所述包层未必需要使用单独材料。还应理解,光学波导130、150(图1)两者可具有类似于或不同于上文连同图2A及2B一起描述的特性的特性。
图3A及3B图解说明光学波导150与光子检测器160a、160b之间的光学连接的两个俯视图。图3A展示光子检测器160a,其具有对接耦合到光子检测器160a的光学波导150。光子检测器的对接耦合的连接需要用于互连的最小长度。然而,光学波导150与光子检测器160a的半导体材料之间的不同折射率可致使来自光学束的能量被往回反射到光学波导150中。举例来说,光学波导150可由具有大约1.5的折射率的Si构成,而光子检测器160a可由(例如)具有大约4.34的折射率的Ge构成。此反射称为“回波损耗”,且除减小由光子检测器160a接收的光学信号的强度以外,其还可干扰光源120(图1)的操作。
图3B展示由光子检测器部分160b1及160b2构成的光子检测器160b,其具有消散耦合到光子检测器160b的光学波导150。光子检测器部分160b1、160b2环绕光学波导150,但分别与光学波导150分离距离d1、d2。在消散耦合中,光学波导150靠近光子检测器部分160b1、160b2放置以使得由光学束在光学波导150中的传输产生的消散场(即,形成于图2B的内芯152b与外包层154b之间的边界处的近场驻波)在完全衰退之前到达光子检测器部分160b1、160b2。距离d1、d2必须足够小以使得来自光学波导150的消散场的强度在其由光子检测器部分160b1、160b2检测之前不完全减小。举例来说,距离d1、d2可为大约10μm或更小。来自光学波导150的消散场引起光子检测器部分160b1、160b2上的传播波模式,借此将来自光学波导150的波连接(或耦合)到光子检测器部分160b1、160b2。
消散耦合的光子检测器160b具有比对接耦合的光子检测器160a(图3A)低的回波损耗,但通常需要比对接耦合的光子检测器160a长的路径长度(例如,大约50μm或更大)。这增加光子检测器160b所需的占用面积且因此增加电子-光子装置100(图1)的总体大小。
因此,期望提供一种具有低回波损耗但具有小路径长度的在光学波导与光子检测器之间的光学连接。
附图说明
图1是常规电子-光子装置的框图。
图2A及2B图解说明常规光学波导的横截面图。
图3A及3B图解说明光学波导及光子检测器的常规光学连接的俯视图。
图4图解说明根据本文中所描述的实施例的光学连接的俯视图。
图5图解说明根据本文中所描述的实施例的光学连接中的光学路径的俯视图。
图6图解说明根据本文中所描述的实施例的另一光学连接中的光学路径的俯视图。
具体实施方式
在以下详细说明中,参考本发明的各种实施例。以足够细节描述这些实施例以使所属领域的技术人员能够实践所述实施例。应理解,可采用其它实施例,且可作出各种结构、逻辑及电改变。另外,在描述各种过程之处,应理解,所述过程的步骤可以除具体描述所述步骤的方式以外的次序发生,除非另有说明。
本文中所描述的实施例有利地利用称为随光学波导发生的弯曲损耗的现象。当光学束在光学波导中行进时,近场驻波(称为消散波)形成于光学波导的内芯与外包层之间的边界处。当在光学波导中发生弯曲时,位于内芯与外包层之间的边界外部的消散波的部分必须比位于内芯内部的波的部分更快地行进,以便维持相同角速度。在称为“临界半径”的点处,消散波无法在相应介质中足够快地行进而维持与在波导内部的波的部分相同的角速度,且此部分的能量沿远离弯曲波导的径向方向从波导向外传播。
通常将弯曲损耗视为光学波导设计中的障碍。然而,下文所描述的实施例加重且利用此现象来提供光学波导与光子检测器之间的连接。
图4图解说明光学波导410与光子检测器420之间的光学连接400的俯视图。举例来说,光学连接400可形成于衬底(例如硅衬底、绝缘体上硅(SOI)衬底、二氧化硅(SiO2)衬底)或印刷电路板(PCB)上。或者,光学连接400的元件可形成于多个单独衬底(例如,Si、SiO2、SOI或其它适合衬底)上。
光学波导410包含内部芯412及外包层414且可集成到衬底(例如,与光子检测器420共同的衬底)中或可为(例如)单模或双模光纤。内芯412可由(举例来说)Si材料形成且具有大约300nm的宽度。外包层414可由(举例来说)SiO2形成。可使用已知工艺在外包层414中图案化内芯412。
光子检测器420由在从光学波导410接收到光学波后即刻产生电响应的半导体材料构成,例如锗(Ge)、硅锗(SiGe)、砷化铟镓(InGaAs)、磷酸铟(InP)或其它适当材料,如下文所描述。光子检测器420包含至少一个电极430,举例来说,其可由例如铝、铜或钛的金属构成。可使用晶片接合及其它现有制造工艺(例如互补金属氧化物半导体(CMOS)半导体制造工艺)来制作光子检测器420。
光学波导410的可操作地连接的端以角度θl弯曲,具有对应曲率半径r1。可使用光刻工艺形成光学波导410的弯曲部分。曲率半径r1可沿着光学波导410的曲线为恒定的,或替代地,可随着角度θl而变化。如果曲率半径r1充分小(即,等于或小于“临界半径”),借此在光学波导410中形成足够急锐的曲线,那么来自光学波导410的消散波离开光学波导410且朝向光子检测器420径向传播。波导410的临界半径将取决于内芯412的宽度以及内芯412及外包层414的材料及相应折射率。针对包含(举例来说)300nm宽的Si内芯412及SiO2外包层的光学波导410,半径r1可等于或小于1μm。
图5图解说明在光学连接400中消散波从光学波导410径向传播到光子检测器420的路径的俯视图。
用于形成光子检测器420的半导体材料可经成形以将传播的消散波反射到共同点(例如,电极430)。可使用(举例来说)例如电子束光刻的光刻工艺或通过蚀刻技术来对半导体材料进行成形。光子检测器420的反射边缘425优选地距光学波导410在约5μm到15μm的范围内,从而为传播的消散波的波长提供足够路径长度,同时允许紧凑光子检测器420。
由光子检测器420接收的径向传播的消散波可以实质上均一角度θ2从边缘425朝向电极430反射。举例来说,光子检测器420的反射边缘425可经成形以将消散波以大约20°角度朝向电极430反射。在其它实施例中,角度θ2可随着其与光学波导410的距离而改变。选择相对靠近(即,在10μm内)光学波导410的电极430的共同点允许较平滑反射边缘425,因为不需要复杂反射点。
为了更佳地促进光学束的反射率,光子检测器420可由具有比环绕衬底高的折射率的材料形成。举例来说,可在具有大约1.5的折射率的SiO2衬底中使用具有大约4.34的折射率的锗(Ge)光子检测器420。也可使用其它材料来形成光子检测器420,例如InP、SiGe、GaAs及其它适当材料。
图6图解说明光子检测器520的另一实施例中的光学连接500中的光学路径的俯视图。光子检测器520包含类似于上文连同图4一起描述的边缘425的经成形反射边缘525以便反射由于弯曲损耗而从光学波导410径向传播的消散波。另外,光子检测器520的底部部分对接耦合到光学波导410的端子点418,以便将来自内芯414的任何剩余光学束耦合到光子检测器520。所述光学束从光子检测器520的另一反射边缘527反射且可在到达共同点(例如,电极430)之前被数次地反射。可使用晶片接合及其它现有制造工艺(例如互补金属氧化物半导体(CMOS)半导体制造工艺)来制作光子检测器520。
可在各种电子-光子装置中使用包含如连同图4到6一起描述的光学波导410及/或光子检测器420、520的光学连接。举例来说,所述光学连接可与包含至少一个光源120及调制器140(图1)的芯片间系统或芯片内系统一起使用以便连接多个存储器元件(例如,一或多个核心或DRAM、SDRAM、SRAM、ROM或其它类型的固态或静态存储器元件)。
以上说明及图式应仅视为说明实现本文中所描述的特征及优点的特定实施例。可对特定工艺、组件及结构作出修改及替代。举例来说,应理解,可使用除连同以上实施例一起具体描述的那些以外的适当类型的半导体材料及存储器元件。因此,不应将本发明的实施例视为由前述说明及图式限制,而是仅由所附权利要求书的范围限制。
Claims (13)
1.一种光学连接,其包括:
光学波导,其经配置以载运光学束,其中所述光学波导包括弯曲部分,所述弯曲部分经配置以发射对应于所述光学束的消散波;及
光子检测器,其包括半导体材料并且经配置以通过消散波耦合到所述光学波导的弯曲部分,
其中所述光子检测器包括至少一个反射边缘,其经成形以将径向传播的波从所述光学波导朝向共同点反射,且其中所述弯曲部分具有小于或等于临界半径的曲率半径,所述临界半径使消散波离开所述光学波导且径向传播。
2.根据权利要求1所述的光学连接,其中所述共同点包括电极。
3.根据权利要求1所述的光学连接,其中所述光学波导包括由具有第一折射率的材料构成的内芯及由具有第二折射率的材料构成的外包层。
4.根据权利要求3所述的光学连接,其中所述第一折射率大于所述第二折射率或者所述内芯具有在300nm到500nm的范围内的宽度。
5.根据权利要求4所述的光学连接,其中所述光学波导的所述弯曲部分具有1μm的曲率半径。
6.根据权利要求3所述的光学连接,其中所述内芯包括硅,且所述外包层包括二氧化硅。
7.根据权利要求1所述的光学连接,其中所述光学波导和所述光子检测器集成在共同衬底上。
8.根据权利要求7所述的光学连接,其中所述光学波导包括:
外包层,其由形成于所述共同衬底上的第一材料构成;及
内芯,其由形成于所述第一材料中的第二材料构成。
9.一种光子检测器,其包括:
半导体材料,其经配置以接收光学能量波,
其中所述半导体材料经形成以使得其包括经成形以将多个所接收的光学能量波朝向共同点反射的至少一个反射边缘,且
其中所述光子检测器经配置以通过消散波耦合到光学波导的弯曲部分,且其中所述弯曲部分具有小于或等于临界半径的曲率半径,所述临界半径使消散波离开所述光学波导且径向传播。
10.根据权利要求9所述的光子检测器,其中所述共同点包括位于所述光子检测器内的至少一个电极或者其中所述反射边缘长5μm到15μm。
11.根据权利要求9所述的光子检测器,其中所述光子检测器包括以下材料中的至少一者:
锗;
硅锗;
砷化铟镓;及
磷酸铱。
12.一种形成光学连接的方法,所述方法包括:
在衬底上提供包层材料;
在所述包层材料中形成光学波导的内芯,其中所述内芯包含经配置以发射对应于由所述内芯载运的光学束的消散波的弯曲部分;且
形成光子检测器,其包括经成形以将多个所接收的光学能量波朝向共同点反射的至少一个反射边缘的半导体材料,所述光子检测器通过所述消散波耦合到所述内芯,且其中所述弯曲部分具有小于或等于临界半径的曲率半径,所述临界半径使消散波离开所述光学波导且径向传播。
13.根据权利要求12所述的方法,其中图案化所述内芯包括:图案化具有在300nm到500nm的范围内的宽度及小于或等于1μm的曲率半径的硅内芯。
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