CN109986412A - A kind of surface treatment method for improving LED wafer grinding and scratching - Google Patents
A kind of surface treatment method for improving LED wafer grinding and scratching Download PDFInfo
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- CN109986412A CN109986412A CN201711479713.0A CN201711479713A CN109986412A CN 109986412 A CN109986412 A CN 109986412A CN 201711479713 A CN201711479713 A CN 201711479713A CN 109986412 A CN109986412 A CN 109986412A
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- China
- Prior art keywords
- cast iron
- lapping liquid
- led wafer
- deionized water
- grinding
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The present invention relates to a kind of surface treatment methods that the grinding of improvement LED wafer scratches.This method comprises: pressing lubricant: deionized water=1:5-30 weight ratio prepares lapping liquid, and the lubricant is one of sodium hydroxide, potassium hydroxide, sodium carbonate, sodium bicarbonate or sodium acetate or combination；Lapping liquid dosage and cast iron disk rotating speed are set, so that lapping liquid is uniformly covered with cast iron panel surface, then places finishing ring, be again turned on cast iron disk rotating speed and lapping liquid, cast iron panel surface is repaired, continues the grinding operation that processing procedure is thinned in LED wafer after the completion of repairing.The method of the present invention is easy to operate, cost is relatively low, remediation efficiency is high, not repeatedly, can effectively solve grinding and scratch abnormal, improve product yield, guarantee normal production.
Description
Technical field
The present invention relates to a kind of surface treatment methods that the grinding of improvement LED wafer scratches, and belong to LED chip technical field.
Background technique
In LED chip manufacturing process, the thinning process about chip is presently mainly to pass through cast iron plate, abrasive material and repair
Engagement positions are realized.Such as the thinned processing procedure of gallium arsenide wafer used in current red LED chip, by round cast iron plate,
Natural garnet abrasive material and cast iron panel surface placed dispersion abrasive material effect finishing ring complete, pass through control abrasive material use
Amount, the thinned rate of the revolving speed of cast iron plate, grinding pressure and the adjustable chip of revolving speed.
During actual job, by Forming Quality, material and the abrasive grain of cast iron plate and finishing ring, the shadow of impurity
It rings, often will appear the phenomenon that wafer surface scratches, the severity of scuffing is different because of different situations, gently then makes in wafer surface
At subtle shallow scratch, this shallow scratch will not generally be influenced too much chip follow-up process and final use, but one
Determine to influence product yield in degree；Under scratch serious situation, the direct fragmentation of wafer surface, scratch is deep and sharp, directly results in
Wafer scrap causes greater loss to product, and such case typically occurs in cast iron plate or finishing ring surface, edge surface generate
In the case where burr；And the influence of abrasive grain, impurity generally will not the biggish scratch of damaging property, often in wafer surface
Generate one or several shadow scratch, this scratch influences chip itself and little, if but because be mixed into inside abrasive material hardness compared with
High particulate matter not only causes serious scratch to chip during the grinding process, and cause cast iron panel surface generation damage into
And burr is generated, the generation of scratch is further aggravated, and can not quickly remove by conventional means.After all, cast iron dish cart
The quality in face is to influence the main factor of grinding quality.
It there is no effective measures and relevant report at present to prevent surface scratching, often repaired after generating scuffing
It is multiple, but the method repaired also more is limited to, and main by increasing pouring weight and abrasive material being cooperated to carry out repairing disk, principle is to pass through increase
Frictional force removes surface spikes, sometimes because the larger exacerbation instead of active force between finishing ring and cast iron plate scratches, or even with
The continuous lengthening of repair time causes cast iron plate surface smoothness to generate deviation and influences the thickness uniformity of chip, more not
Controllable, this kind of mode is repaired disk and is easily occurred repeatedly, directly affects production efficiency, increases product quality hidden danger.
Summary of the invention
In view of the deficiencies of the prior art, the present invention provides a kind of surface treatment methods that the grinding of improvement LED wafer scratches.
The method of the present invention is that crystalline substance occur when processing procedure is thinned to LED wafer using cast iron plate, finishing ring, abrasive material by the prior art
The burr that generates when piece scratches to cast iron panel surface, damage carry out repair process, avoid generating back surface of the wafer it is slight or
Serious scratch solves chip from source and scratches, improves the quality of LED wafer.The present invention is a kind of pair of LED wafer grinding casting
The processing method on iron pan surface continues the grinding operation that processing procedure is thinned in LED wafer after reparation.
The technical solution of the present invention is as follows:
A kind of surface treatment method for improving LED wafer grinding and scratching, including use cast iron plate, finishing ring, lapping liquid, place
Managing step includes:
(1) press lubricant: deionized water=1:5-30 weight ratio prepare lapping liquid, the lubricant be sodium hydroxide,
One of potassium hydroxide, sodium carbonate, sodium bicarbonate or sodium acetate or combination；
(2) when LED wafer scuffing occurs in thinned processing procedure, start cast iron disc spins and make the lapping liquid of step (1) preparation
It flows to cast iron panel surface and is uniformly covered with cast iron panel surface, then stop cast iron disc spins and lapping liquid flows into, finishing ring is put
On cast iron plate, it is again turned on cast iron disc spins and lapping liquid flows into the surface reconditioning for carrying out cast iron plate, repair time 30-120
Minute.Further, further include following steps:
(3) after repairing, cast iron plate and finishing ring is scrubbed clean with deionized water and dried with dust-free paper；Abrasive material bucket
It scrubs clean, continues the grinding operation that processing procedure is thinned in LED wafer.
Preferred according to the present invention, in step (1), the deionized water conductivity≤0.2 μ s/cm, the conductivity exists
25 DEG C measure.Further, the deionized water conductivity 0.1-0.2 μ s/cm, the conductivity are measured at 25 DEG C.
Preferred according to the present invention, in step (1), the weight ratio of the lubricant and deionized water is 1:10-20.
It is preferred according to the present invention, in step (1), the lapping liquid is placed in abrasive material bucket, opens agitating function, stirring
60-100 revs/min of rate, it is uniformly mixed lapping liquid.
It is preferred according to the present invention, in step (2), conductivity≤0.2 μ s/cm is first used before the cast iron disk startup rotation
Deionized water is scrubbed clean and is dried with dust-free paper；Further, the deionized water conductivity 0.1-0.2 μ s/cm；The electricity
Conductance is measured at 25 DEG C.
Preferred according to the present invention, in step (2), the cast iron disk rotating speed is 20-50 revs/min, the grinding flow quantity
For 5-20mL/min.
Preferred according to the present invention, in step (3), the deionized water conductivity≤0.2 μ s/cm, the conductivity exists
25 DEG C measure.Further, the deionized water conductivity 0.1-0.2 μ s/cm, the conductivity are measured at 25 DEG C.
According to the present invention, the cast iron panel surface and finishing ring use preceding and be intended to after with deionized water and wool brush
It scrubs clean, is dried with dust-free paper.Preferably, the deionized water conductivity≤0.2 μ s/cm, the conductivity are surveyed at 25 DEG C
?；
After the method for the present invention completes cast iron plate reparation, abrasive material bucket is scrubbed clean and is replaced the mill that thinned grinding operation uses
Material carries out grinding operation by the thinned processing procedure of the prior art, carries out to LED wafer thinned.By wafer grinding face after grinding
Scrub clean and dried up with nitrogen gun, wafer surface is smooth, it is clean, without scuffing.What the present invention repaired is cast iron plate, is not brilliant
Piece, chip have had already appeared scuffing, and scratch be because of cast iron plate surface abnormalities caused by, the method for the present invention seeks to solve cast iron
The exception of panel surface guarantees that scuffing problem no longer occurs for the subsequent chip normally ground.Further, the nitrogen gas purity >
98%.
Technical characterstic of the invention and the utility model has the advantages that
It is to be solved from source the present invention be directed to LED wafer once occurring scratching the processing method that can be used
Scuffing, and guarantee the thinned of subsequent wafer not to be caused further to influence, because scratching once occurring, often continuously go out
It is existing, rather than it is accidentally primary.The present invention guarantees being thinned for chip by repairing the burr, damage that cast iron panel surface generates
Quality prevents from generating back surface of the wafer light or heavy scratch.The present invention need to only be damaged by lapping liquid is repaired according to cast iron plate
Actual conditions, the grinding of subsequent thinned processing procedure can be solved by control cast iron disk rotating speed, lapping liquid dosage, repair time etc.
To the scuffing abnormal conditions of chip, improves chip piece and grinding quality and product yield is thinned.
The present invention is made into reparation lapping liquid using alkaline solution and deionized water, the inventors discovered that specific by this
Lapping liquid has satiny effect, lubricates cast iron plate disk, and make lapping liquid in repair process using the finishing ring of cast iron plate
It is trimmed ring and is uniformly dispersed in cast iron panel surface, in the effect that cast iron panel surface is directly contacted and mutually rotated with finishing ring
Under, disk is able to sufficient lubrication, effectively removes the exception such as particulate matter, burr of cast iron panel surface, ensure that grinding for subsequent wafer
Quality is ground, prevents LED wafer that the lasting appearance scratched in grinding operation is thinned.
Surface treatment method of the invention is easy to operate, Yi Shixian, it is at low cost, repair it is fast, high-efficient, not repeatedly.
Detailed description of the invention
Fig. 1 is that cast iron plate repairs LED wafer schematic surface obtained in the thinned grinding operation in front and back；A. before repairing, b.
After reparation, wherein 1 wafer grinding face, 2 grindings scratch.The LED for carrying out being thinned grinding after embodiment medium cast iron panel surface reparation is brilliant
There is no scratch to occur for piece.
Fig. 2 is that 1 cast iron plate of embodiment repairs LED wafer surface material object photo obtained in the thinned grinding operation in front and back；a.
Before reparation, after b. is repaired.
Specific embodiment
The present invention is further qualified below with reference to embodiment, but not limited to this.The LED wafer is that red-light LED is used
Gallium arsenide wafer.
Embodiment 1
A kind of surface treatment method for improving LED wafer grinding and scratching, step are as follows:
1. being the deionized water and wool brush of 0.2 μ s/cm (25 DEG C measure) by cast iron panel surface and finishing ring conductivity
It scrubs clean, is dried with dust-free paper；
2. lapping liquid configures, weight ratio sodium acetate: deionized water=1:12 lapping liquid is configured, and stir evenly, stood
14 minutes, sodium acetate purity 99% used, 0.2 μ s/cm of deionized water conductivity (25 DEG C measure)；
3. 2. lapping liquid that step is configured is placed in equipment abrasive material bucket, unlatching agitating function, and 70 revs/min of stirring rate,
Lapping liquid dosage is set as 7ml/min；
4. it is 25 revs/min that cast iron disk rotating speed, which is arranged, cast iron disc spins and lapping liquid are opened, is covered with cast iron panel surface uniformly
Lapping liquid, then stops cast iron disc spins and lapping liquid flows into, and finishing ring is placed on cast iron plate and is again turned on cast iron disc spins
And lapping liquid, to cast iron plate carry out surface reconditioning, repair time 30 minutes；
5. being the deionized water brush of 0.2 μ s/cm (25 DEG C measure) by cast iron plate and finishing ring conductivity after repairing
Wash clean is simultaneously dried with dust-free paper.It on cast iron plate after repair can continue that grinding operation normally is thinned, it is specific to grasp
Make as follows:
Abrasive material bucket is scrubbed clean, and replacing lapping liquid in abrasive material bucket is that the abrasive material that grinding uses is thinned to start by existing skill
Art carries out that grinding operation is thinned, and wafer grinding face scrubs clean after grinding and uses the nitrogen gun that purity is 98% dry up,
LED wafer surfacing, cleaning, without scuffing, as shown in b in Fig. 2.Same be thinned is carried out on the preprosthetic cast iron plate to grind
LED wafer surface picture obtained by operation is ground as shown in a in Fig. 2, there is apparent scuffing trace.
Wafer grinding equipment involved in embodiment can produce wafer lapping machine with South Korea NTS, and processing procedure abrasive material, which is thinned, can use natural stone
Garnet abrasive material.Similarly hereinafter.
Embodiment 2
A kind of surface treatment method for improving LED wafer grinding and scratching, steps are as follows:
1. being 0.17 μ s/cm (25 DEG C measure) deionized water and wool brush brush by cast iron panel surface and finishing ring conductivity
It washes
Completely, it is dried with dust-free paper；
2. lapping liquid configures, weight ratio sodium hydroxide: deionized water=1:15 is configured, and stir evenly, stands 10 minutes,
Sodium hydroxide purity 98% used, 0.17 μ s/cm of deionized water conductivity (25 DEG C measure)；
3. 2. lapping liquid that step is configured is placed in equipment abrasive material bucket, unlatching agitating function, and 80 revs/min of stirring rate,
Lapping liquid dosage is set as 14ml/min；
4. it is 32 revs/min that cast iron disk rotating speed, which is arranged, cast iron disc spins and lapping liquid are opened, is covered with cast iron panel surface uniformly
Lapping liquid, the cast iron plate that then stops rotating close lapping liquid, and finishing ring is placed on cast iron plate and is again turned on rotation and lapping liquid
Into, progress cast iron plate surface reconditioning, repair time 55 minutes；
5. being the deionized water of 0.17 μ s/cm (25 DEG C measure) by cast iron plate and finishing ring conductivity after repairing
It scrubs clean and is dried with dust-free paper.
Abrasive material bucket is scrubbed clean and replaces normal abrasive material and starts to carry out that grinding operation is thinned by the prior art, grinding finishes
Wafer grinding face is scrubbed clean afterwards and is used the nitrogen gun that purity is 99% dry up, wafer surface is smooth, it is clean, without scuffing.
Embodiment 3
A kind of surface treatment method for improving LED wafer grinding and scratching, specific steps include:
1. being the deionized water and wool brush of 0.15 μ s/cm (25 DEG C measure) by cast iron panel surface and finishing ring conductivity
It scrubs clean, is dried with dust-free paper；
2. lapping liquid configures, weight ratio sodium carbonate: sodium bicarbonate: deionized water=0.3:0.7:20 is configured, and is stirred equal
It is even, 18 minutes are stood, sodium carbonate used, sodium bicarbonate purity 97%, 0.15 μ s/cm of deionized water conductivity (25 DEG C measure)；
3. 2. lapping liquid that step is configured is placed in equipment abrasive material bucket, unlatching agitating function, and 90 revs/min of stirring rate,
Lapping liquid dosage is set as 18ml/min；
4.) setting cast iron disk rotating speed is 40 revs/min, cast iron disc spins and lapping liquid are opened, by the uniform cloth of cast iron panel surface
Full lapping liquid, then stops rotating and lapping liquid, and finishing ring is placed on cast iron plate and is again turned on rotation and lapping liquid carry out table
Face is repaired, and repair time 100 minutes；
5. being the deionized water brush of 0.2 μ s/cm (25 DEG C measure) by cast iron plate and finishing ring conductivity after repairing
Wash clean is simultaneously dried with dust-free paper；
Abrasive material bucket is scrubbed clean and replaces normal abrasive material and starts to carry out that grinding operation is thinned by the prior art, grinding finishes
Wafer grinding face is scrubbed clean afterwards and is used the nitrogen gun that purity is 99.9% dry up, wafer surface is smooth, it is clean, without scuffing.
Claims (7)
1. a kind of surface treatment method for improving LED wafer grinding and scratching, including use cast iron plate, finishing ring, lapping liquid, processing
Step includes:
(1) press lubricant: deionized water=1:5-30 weight ratio prepares lapping liquid, and the lubricant is sodium hydroxide, hydrogen-oxygen
Change one of potassium, sodium carbonate, sodium bicarbonate or sodium acetate or combination；
(2) when LED wafer scuffing occurs in thinned processing procedure, start cast iron disc spins and the lapping liquid for preparing step (1) flows to
Cast iron panel surface is simultaneously uniformly covered with cast iron panel surface, then stops cast iron disc spins and lapping liquid flows into, and finishing ring is placed on casting
On iron pan, it is again turned on cast iron disc spins and lapping liquid flows into the surface reconditioning for carrying out cast iron plate, repair time 30-120 minute；
(3) after repairing, cast iron plate and finishing ring is scrubbed clean with deionized water and dried with dust-free paper；The scrub of abrasive material bucket
Completely, continue the grinding operation that processing procedure is thinned in LED wafer.
2. a kind of surface treatment method for improving LED wafer grinding and scratching according to claim 1, which is characterized in that step
Suddenly in (1), the deionized water conductivity≤0.2 μ s/cm；Preferably, the deionized water conductivity 0.1-0.2 μ s/cm；Institute
Conductivity is stated to measure at 25 DEG C.
3. a kind of surface treatment method for improving LED wafer grinding and scratching according to claim 1, which is characterized in that step
Suddenly in (1), the weight ratio of the lubricant and deionized water is 1:10-20.
4. a kind of surface treatment method for improving LED wafer grinding and scratching according to claim 1, which is characterized in that step
Suddenly in (1), the lapping liquid is placed in abrasive material bucket, unlatching agitating function, 60-100 revs/min of stirring rate.
5. a kind of surface treatment method for improving LED wafer grinding and scratching according to claim 1, which is characterized in that rapid
(2) it in, is first scrubbed clean with conductivity≤0.2 μ s/cm deionized water and is wiped with dust-free paper before the cast iron disk startup rotation
It is dry；Preferably, the deionized water conductivity 0.1-0.2 μ s/cm；The conductivity is measured at 25 DEG C.
6. a kind of surface treatment method for improving LED wafer grinding and scratching according to claim 1, which is characterized in that step
Suddenly in (2), the cast iron disk rotating speed is 20-50 revs/min, and the grinding flow quantity is 5-20mL/min.
7. a kind of surface treatment method for improving LED wafer grinding and scratching according to claim 1, which is characterized in that step
Suddenly in (3), the deionized water conductivity≤0.2 μ s/cm, the conductivity is measured at 25 DEG C；Preferably, the deionized water
Conductivity 0.1-0.2 μ s/cm；The conductivity is measured at 25 DEG C.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711479713.0A CN109986412A (en) | 2017-12-29 | 2017-12-29 | A kind of surface treatment method for improving LED wafer grinding and scratching |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201711479713.0A CN109986412A (en) | 2017-12-29 | 2017-12-29 | A kind of surface treatment method for improving LED wafer grinding and scratching |
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| CN109986412A true CN109986412A (en) | 2019-07-09 |
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| CN201711479713.0A Pending CN109986412A (en) | 2017-12-29 | 2017-12-29 | A kind of surface treatment method for improving LED wafer grinding and scratching |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20100052028A (en) * | 2008-11-10 | 2010-05-19 | 주식회사 실트론 | Dressing method of pads in double side polisher |
| CN202344362U (en) * | 2011-07-07 | 2012-07-25 | 深圳市方达研磨技术有限公司 | Sapphire thinning machine |
| CN103240666A (en) * | 2013-05-15 | 2013-08-14 | 中锗科技有限公司 | Grinding method for solar battery germanium substrate slices |
| CN105823974A (en) * | 2016-04-28 | 2016-08-03 | 山东浪潮华光光电子股份有限公司 | Method for improving LED chip testing needle mark |
| CN106737129A (en) * | 2016-12-16 | 2017-05-31 | 中国科学院长春光学精密机械与物理研究所 | The flat grinding device of adjustable rotating ratio |
-
2017
- 2017-12-29 CN CN201711479713.0A patent/CN109986412A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20100052028A (en) * | 2008-11-10 | 2010-05-19 | 주식회사 실트론 | Dressing method of pads in double side polisher |
| CN202344362U (en) * | 2011-07-07 | 2012-07-25 | 深圳市方达研磨技术有限公司 | Sapphire thinning machine |
| CN103240666A (en) * | 2013-05-15 | 2013-08-14 | 中锗科技有限公司 | Grinding method for solar battery germanium substrate slices |
| CN105823974A (en) * | 2016-04-28 | 2016-08-03 | 山东浪潮华光光电子股份有限公司 | Method for improving LED chip testing needle mark |
| CN106737129A (en) * | 2016-12-16 | 2017-05-31 | 中国科学院长春光学精密机械与物理研究所 | The flat grinding device of adjustable rotating ratio |
Non-Patent Citations (1)
| Title |
|---|
| 刘海锋等: "金刚石超薄切割砂轮减薄研磨工艺的研究 ", 《金刚石与磨料磨具工程》 * |
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