CN109972085B - 静电吸盘、成膜装置、基板的吸附方法、成膜方法以及电子设备的制造方法 - Google Patents

静电吸盘、成膜装置、基板的吸附方法、成膜方法以及电子设备的制造方法 Download PDF

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Publication number
CN109972085B
CN109972085B CN201811010072.9A CN201811010072A CN109972085B CN 109972085 B CN109972085 B CN 109972085B CN 201811010072 A CN201811010072 A CN 201811010072A CN 109972085 B CN109972085 B CN 109972085B
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China
Prior art keywords
substrate
electrostatic chuck
electrode
adsorption
film
Prior art date
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CN201811010072.9A
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English (en)
Chinese (zh)
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CN109972085A (zh
Inventor
柏仓一史
石井博
元矢秀和
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sodick Co Ltd
Canon Tokki Corp
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Sodick Co Ltd
Canon Tokki Corp
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Publication of CN109972085A publication Critical patent/CN109972085A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Vapour Deposition (AREA)
CN201811010072.9A 2017-12-27 2018-08-31 静电吸盘、成膜装置、基板的吸附方法、成膜方法以及电子设备的制造方法 Active CN109972085B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2017-0180999 2017-12-27
KR1020170180999A KR20190100980A (ko) 2017-12-27 2017-12-27 정전척, 성막장치, 기판흡착방법, 성막방법, 및 전자 디바이스의 제조방법

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CN109972085A CN109972085A (zh) 2019-07-05
CN109972085B true CN109972085B (zh) 2023-05-19

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JP (1) JP7127765B2 (https=)
KR (1) KR20190100980A (https=)
CN (1) CN109972085B (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102550503B1 (ko) 2019-06-25 2023-06-30 닛폰 호소 교카이 부호화 장치, 복호 장치, 및 프로그램

Citations (4)

* Cited by examiner, † Cited by third party
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JP2003158174A (ja) * 2001-11-22 2003-05-30 Canon Inc 静電吸着装置、その製造方法及び固定保持方法
JP2007246983A (ja) * 2006-03-15 2007-09-27 Seiko Epson Corp 成膜装置
JP2010199177A (ja) * 2009-02-24 2010-09-09 Tokyo Electron Ltd 静電チャック及びプラズマ処理装置
WO2012165250A1 (ja) * 2011-05-30 2012-12-06 株式会社クリエイティブ テクノロジー 静電吸着体及びこれを用いた静電吸着装置

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JPS6095932A (ja) * 1983-10-31 1985-05-29 Toshiba Mach Co Ltd 静電チヤツク
JP2004183044A (ja) * 2002-12-03 2004-07-02 Seiko Epson Corp マスク蒸着方法及び装置、マスク及びマスクの製造方法、表示パネル製造装置、表示パネル並びに電子機器
JP2008041993A (ja) * 2006-08-08 2008-02-21 Shinko Electric Ind Co Ltd 静電チャック
WO2008041293A1 (fr) * 2006-09-29 2008-04-10 Shin-Etsu Engineering Co., Ltd. Procédé de transfert de pièce, dispositif à mandrin électrostatique et procédé de jonction de carte
CN102089875B (zh) * 2008-07-08 2012-08-08 创意科技股份有限公司 双极型静电吸盘
KR101219054B1 (ko) * 2009-05-27 2013-01-18 도쿄엘렉트론가부시키가이샤 정전 흡착 전극 및 그 제조 방법, 그리고 기판 처리 장치
KR100965414B1 (ko) * 2010-03-12 2010-06-24 엘아이지에이디피 주식회사 바이폴라 전극 패턴이 형성된 정전 척
JP2011195907A (ja) 2010-03-19 2011-10-06 Tokyo Electron Ltd マスク保持装置及び薄膜形成装置
KR101923174B1 (ko) 2011-05-11 2018-11-29 삼성디스플레이 주식회사 정전 척, 상기 정전 척을 포함하는 박막 증착 장치 및 이를 이용한 유기 발광 표시 장치의 제조 방법
CN103066000B (zh) * 2011-10-19 2015-11-25 中芯国际集成电路制造(上海)有限公司 晶圆承载设备及晶圆承载的方法
TWI575330B (zh) 2012-03-27 2017-03-21 尼康股份有限公司 光罩搬送裝置、光罩保持裝置、基板處理裝置、及元件製造方法
US10304713B2 (en) 2013-09-20 2019-05-28 Applied Materials, Inc. Substrate carrier with integrated electrostatic chuck
JP6217303B2 (ja) * 2013-10-17 2017-10-25 株式会社シンコーモールド 導電性シリコーンゴム製電極パターンの作製方法並びにオールシリコーンゴム製静電チャック及びその製造方法
KR102308906B1 (ko) * 2015-03-26 2021-10-06 삼성디스플레이 주식회사 정전 척 시스템과, 이를 이용한 유기 발광 디스플레이 장치의 제조 방법
CN106024682B (zh) * 2015-03-31 2020-07-21 松下知识产权经营株式会社 等离子处理装置以及等离子处理方法
KR101853889B1 (ko) * 2016-02-29 2018-05-02 주식회사 선익시스템 정전척을 이용한 기판 얼라인 방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003158174A (ja) * 2001-11-22 2003-05-30 Canon Inc 静電吸着装置、その製造方法及び固定保持方法
JP2007246983A (ja) * 2006-03-15 2007-09-27 Seiko Epson Corp 成膜装置
JP2010199177A (ja) * 2009-02-24 2010-09-09 Tokyo Electron Ltd 静電チャック及びプラズマ処理装置
WO2012165250A1 (ja) * 2011-05-30 2012-12-06 株式会社クリエイティブ テクノロジー 静電吸着体及びこれを用いた静電吸着装置

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KR20190100980A (ko) 2019-08-30
CN109972085A (zh) 2019-07-05
JP2019117924A (ja) 2019-07-18
JP7127765B2 (ja) 2022-08-30

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