KR20190100980A - 정전척, 성막장치, 기판흡착방법, 성막방법, 및 전자 디바이스의 제조방법 - Google Patents

정전척, 성막장치, 기판흡착방법, 성막방법, 및 전자 디바이스의 제조방법 Download PDF

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Publication number
KR20190100980A
KR20190100980A KR1020170180999A KR20170180999A KR20190100980A KR 20190100980 A KR20190100980 A KR 20190100980A KR 1020170180999 A KR1020170180999 A KR 1020170180999A KR 20170180999 A KR20170180999 A KR 20170180999A KR 20190100980 A KR20190100980 A KR 20190100980A
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KR
South Korea
Prior art keywords
electrostatic chuck
substrate
electrode
adsorption
plate portion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
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KR1020170180999A
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English (en)
Korean (ko)
Inventor
카즈히토 카시쿠라
히로시 이시이
히데카즈 모토야
Original Assignee
캐논 톡키 가부시키가이샤
가부시키가이샤 소딕
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 캐논 톡키 가부시키가이샤, 가부시키가이샤 소딕 filed Critical 캐논 톡키 가부시키가이샤
Priority to KR1020170180999A priority Critical patent/KR20190100980A/ko
Priority to JP2018161966A priority patent/JP7127765B2/ja
Priority to CN201811010072.9A priority patent/CN109972085B/zh
Publication of KR20190100980A publication Critical patent/KR20190100980A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H01L21/6833—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • H01L21/02631—
    • H01L51/0011—
    • H01L51/56—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Vapour Deposition (AREA)
KR1020170180999A 2017-12-27 2017-12-27 정전척, 성막장치, 기판흡착방법, 성막방법, 및 전자 디바이스의 제조방법 Ceased KR20190100980A (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020170180999A KR20190100980A (ko) 2017-12-27 2017-12-27 정전척, 성막장치, 기판흡착방법, 성막방법, 및 전자 디바이스의 제조방법
JP2018161966A JP7127765B2 (ja) 2017-12-27 2018-08-30 静電チャック、成膜装置、基板吸着方法、成膜方法、及び電子デバイスの製造方法
CN201811010072.9A CN109972085B (zh) 2017-12-27 2018-08-31 静电吸盘、成膜装置、基板的吸附方法、成膜方法以及电子设备的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020170180999A KR20190100980A (ko) 2017-12-27 2017-12-27 정전척, 성막장치, 기판흡착방법, 성막방법, 및 전자 디바이스의 제조방법

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020190105026A Division KR20190103123A (ko) 2019-08-27 2019-08-27 정전척, 성막장치, 기판흡착방법, 성막방법, 및 전자 디바이스의 제조방법

Publications (1)

Publication Number Publication Date
KR20190100980A true KR20190100980A (ko) 2019-08-30

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KR1020170180999A Ceased KR20190100980A (ko) 2017-12-27 2017-12-27 정전척, 성막장치, 기판흡착방법, 성막방법, 및 전자 디바이스의 제조방법

Country Status (3)

Country Link
JP (1) JP7127765B2 (https=)
KR (1) KR20190100980A (https=)
CN (1) CN109972085B (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102550503B1 (ko) 2019-06-25 2023-06-30 닛폰 호소 교카이 부호화 장치, 복호 장치, 및 프로그램

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6095932A (ja) * 1983-10-31 1985-05-29 Toshiba Mach Co Ltd 静電チヤツク
JP2003158174A (ja) * 2001-11-22 2003-05-30 Canon Inc 静電吸着装置、その製造方法及び固定保持方法
JP2004183044A (ja) * 2002-12-03 2004-07-02 Seiko Epson Corp マスク蒸着方法及び装置、マスク及びマスクの製造方法、表示パネル製造装置、表示パネル並びに電子機器
JP2007246983A (ja) * 2006-03-15 2007-09-27 Seiko Epson Corp 成膜装置
JP2008041993A (ja) * 2006-08-08 2008-02-21 Shinko Electric Ind Co Ltd 静電チャック
WO2008041293A1 (fr) * 2006-09-29 2008-04-10 Shin-Etsu Engineering Co., Ltd. Procédé de transfert de pièce, dispositif à mandrin électrostatique et procédé de jonction de carte
CN102089875B (zh) * 2008-07-08 2012-08-08 创意科技股份有限公司 双极型静电吸盘
JP5508737B2 (ja) * 2009-02-24 2014-06-04 東京エレクトロン株式会社 静電チャック及びプラズマ処理装置
KR101219054B1 (ko) * 2009-05-27 2013-01-18 도쿄엘렉트론가부시키가이샤 정전 흡착 전극 및 그 제조 방법, 그리고 기판 처리 장치
KR100965414B1 (ko) * 2010-03-12 2010-06-24 엘아이지에이디피 주식회사 바이폴라 전극 패턴이 형성된 정전 척
JP2011195907A (ja) 2010-03-19 2011-10-06 Tokyo Electron Ltd マスク保持装置及び薄膜形成装置
KR101923174B1 (ko) 2011-05-11 2018-11-29 삼성디스플레이 주식회사 정전 척, 상기 정전 척을 포함하는 박막 증착 장치 및 이를 이용한 유기 발광 표시 장치의 제조 방법
WO2012165250A1 (ja) 2011-05-30 2012-12-06 株式会社クリエイティブ テクノロジー 静電吸着体及びこれを用いた静電吸着装置
CN103066000B (zh) * 2011-10-19 2015-11-25 中芯国际集成电路制造(上海)有限公司 晶圆承载设备及晶圆承载的方法
TWI575330B (zh) 2012-03-27 2017-03-21 尼康股份有限公司 光罩搬送裝置、光罩保持裝置、基板處理裝置、及元件製造方法
US10304713B2 (en) 2013-09-20 2019-05-28 Applied Materials, Inc. Substrate carrier with integrated electrostatic chuck
JP6217303B2 (ja) * 2013-10-17 2017-10-25 株式会社シンコーモールド 導電性シリコーンゴム製電極パターンの作製方法並びにオールシリコーンゴム製静電チャック及びその製造方法
KR102308906B1 (ko) * 2015-03-26 2021-10-06 삼성디스플레이 주식회사 정전 척 시스템과, 이를 이용한 유기 발광 디스플레이 장치의 제조 방법
CN106024682B (zh) * 2015-03-31 2020-07-21 松下知识产权经营株式会社 等离子处理装置以及等离子处理方法
KR101853889B1 (ko) * 2016-02-29 2018-05-02 주식회사 선익시스템 정전척을 이용한 기판 얼라인 방법

Also Published As

Publication number Publication date
CN109972085A (zh) 2019-07-05
JP2019117924A (ja) 2019-07-18
JP7127765B2 (ja) 2022-08-30
CN109972085B (zh) 2023-05-19

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