CN109873057A - LED epitaxial slice and its growing method - Google Patents
LED epitaxial slice and its growing method Download PDFInfo
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- CN109873057A CN109873057A CN201910085715.4A CN201910085715A CN109873057A CN 109873057 A CN109873057 A CN 109873057A CN 201910085715 A CN201910085715 A CN 201910085715A CN 109873057 A CN109873057 A CN 109873057A
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Abstract
The invention discloses a kind of LED epitaxial slice and its growing methods, belong to technical field of semiconductors.Epitaxial wafer includes substrate, buffer layer, n type semiconductor layer, active layer and p type semiconductor layer, active layer includes the first laminated construction, second laminated construction, third layer stack structure and the 4th laminated construction, it includes the first sublayer that the quantum of first laminated construction, which is built, second sublayer and third sublayer, it includes the 4th sublayer and the 5th sublayer that the quantum of second laminated construction, which is built, first sublayer, third sublayer, 4th sublayer, the material that the quantum of 4th laminated construction is built is all made of the gallium nitride to undope, second sublayer, 5th sublayer, the material that the quantum of third layer stack structure is built is all made of the gallium nitride of doped silicon；The quantum of first laminated construction build in the average doping concentration of silicon, the quantum of the second laminated construction build in the average doping concentration of silicon, the doping concentration of silicon is gradually reduced in third layer stack structure.The present invention finally improves radiation recombination efficiency.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to a kind of LED epitaxial slice and its growing method.
Background technique
Light emitting diode (English: Light Emitting Diode, referred to as: LED) it is a kind of semi-conductor electricity that can be luminous
Subcomponent.As a kind of New Solid lighting source efficiently, environmentally friendly, green, LED is widely used in rapidly traffic
The fields such as signal lamp, automobile interior exterior lamp, landscape light in city, cell phone back light source.The core component of LED is chip, improves chip
Luminous efficiency be the target constantly pursued in LED application process.
Chip includes epitaxial wafer and the electrode that extension on piece is arranged in.Existing LED epitaxial wafer includes substrate, buffer layer, N
Type semiconductor layer, active layer and p type semiconductor layer, buffer layer, n type semiconductor layer, active layer and p type semiconductor layer stack gradually
On substrate.Active layer includes that multiple Quantum Well and multiple quantum are built, and multiple Quantum Well and multiple quantum build alternately laminated setting.
The electronics that n type semiconductor layer provides and the hole that p type semiconductor layer provides are limited in Quantum Well by quantum base carries out compound hair
Light, substrate provide the surface of epitaxial growth, and buffer layer provides nuclearing centre for epitaxial growth.
In the implementation of the present invention, the inventor finds that the existing technology has at least the following problems:
The material that quantum is built generallys use the gallium nitride of doped silicon, to destroy the line defect in crystal, while extending injection
The electric current of LED reduces the operating voltage of LED.If the silicon of high concentration is adulterated in quantum base, although can substantially reduce LED's
Operating voltage, but will affect the crystal quality of epitaxial wafer, cause the light emission luminance of LED to reduce.If adulterated in quantum base low
The silicon of concentration, then LED operation voltage does not change substantially, can not play the effect for reducing LED operation voltage.Therefore, quantum is built
The doping concentration of middle silicon is difficult to combine the operating voltage of the crystal quality of epitaxial wafer and LED.
Summary of the invention
The embodiment of the invention provides a kind of LED epitaxial slice and its growing method, be able to solve the prior art without
Method combines the problem of crystal quality and LED operation voltage of epitaxial wafer.The technical solution is as follows:
On the one hand, the embodiment of the invention provides a kind of LED epitaxial slice, the LED epitaxial slice packets
Include substrate, buffer layer, n type semiconductor layer, active layer and p type semiconductor layer, it is the buffer layer, the n type semiconductor layer, described
Active layer and the p type semiconductor layer stack gradually over the substrate；The active layer includes the first lamination stacked gradually
Structure, the second laminated construction, third layer stack structure and the 4th laminated construction, first laminated construction, the second lamination knot
Structure, the third layer stack structure and the 4th laminated construction include that at least one Quantum Well and at least one quantum are built, institute
It states Quantum Well and the quantum builds alternately laminated setting；It includes the first son stacked gradually that the quantum of first laminated construction, which is built,
Layer, the second sublayer and third sublayer, it includes the 4th sublayer stacked gradually and the 5th son that the quantum of second laminated construction, which is built,
Layer, the material of first sublayer, the material of the third sublayer, the material of the 4th sublayer, the 4th laminated construction
The material built of quantum be all made of the gallium nitride to undope, the material, described of the material of second sublayer, the 5th sublayer
The material that the quantum of third layer stack structure is built is all made of the gallium nitride of doped silicon；Silicon in the quantum base of first laminated construction
Average doping concentration is greater than the average doping concentration of silicon in the quantum base of second laminated construction, second laminated construction
The average doping concentration of silicon is greater than the doping concentration of silicon in the third layer stack structure in quantum base.
Optionally, the quantity that the quantum of first laminated construction is built is greater than the number that the quantum of second laminated construction is built
Amount, the quantity that the quantum of second laminated construction is built are greater than the quantity that the quantum of the third layer stack structure is built, the third
The quantity that the quantum of laminated construction is built is greater than the quantity that the quantum of the 4th laminated construction is built.
Further, the number that the quantum of the quantum of first laminated construction is built quantity and second laminated construction is built
The difference for the quantity that the quantum of quantity and the third layer stack structure that the difference of amount, the quantum of second laminated construction are built is built, institute
The difference of quantity that the quantity at quantum base and the quantum of the 4th laminated construction for stating third layer stack structure are built is equal.
Illustratively, the number that the quantum of the quantum of the third layer stack structure is built quantity and the 4th laminated construction is built
The difference of amount is 1~2.
Illustratively, the quantity that the quantum of the 4th laminated construction is built is 1~2.
Optionally, the quantum of first laminated construction build in silicon average doping concentration and second laminated construction
Quantum build in the ratio between average doping concentration of silicon, the quantum of second laminated construction build in silicon average doping concentration with it is described
The ratio between doping concentration of silicon is equal in the quantum base of third layer stack structure.
Further, the average doping concentration of silicon is second laminated construction in the quantum base of first laminated construction
Quantum build in 1.5 times~3 times of average doping concentration of silicon, the quantum of second laminated construction build in silicon average doping
Concentration is 1.5 times~3 times of the doping concentration of silicon during the quantum of the third layer stack structure is built.
Illustratively, the doping concentration of silicon is 1*10 in the quantum base of the third layer stack structure17/cm3~5*1017/
cm3。
Optionally, the thickness of first sublayer, the thickness of second sublayer, the third sublayer thickness, described
The thickness of 4th sublayer, the thickness of the 5th sublayer, the third layer stack structure quantum build thickness, the 4th lamination
The thickness that the quantum of structure is built is equal.
On the other hand, the embodiment of the invention provides a kind of growing method of LED epitaxial slice, the growth sides
Method includes:
One substrate is provided；
Successively grown buffer layer, n type semiconductor layer, active layer and p type semiconductor layer over the substrate；
Wherein, the active layer include the first laminated construction stacked gradually, the second laminated construction, third layer stack structure and
4th laminated construction, first laminated construction, second laminated construction, the third layer stack structure and the 4th lamination
Structure includes that at least one Quantum Well and at least one quantum are built, and the Quantum Well and the quantum build alternately laminated setting；
It includes the first sublayer, the second sublayer and the third sublayer stacked gradually that the quantum of first laminated construction, which is built, and described second is folded
It includes the 4th sublayer and the 5th sublayer stacked gradually, material, the third of first sublayer that the quantum of layer structure, which is built,
The material of layer, the material of the 4th sublayer, the material that the quantum of the 4th laminated construction is built are all made of the nitridation to undope
Gallium, the material of second sublayer, the material of the 5th sublayer, the material that the quantum of the third layer stack structure is built are all made of
The gallium nitride of doped silicon；The average doping concentration of silicon is greater than second laminated construction in the quantum base of first laminated construction
Quantum build in silicon average doping concentration, the quantum of second laminated construction build in silicon average doping concentration be greater than it is described
The doping concentration of silicon in third layer stack structure.
Technical solution provided in an embodiment of the present invention has the benefit that
It is divided into four parts, i.e. the first lamination knot by the laminated construction that Quantum Well and quantum are built alternately laminated formation
Structure, the second laminated construction, third layer stack structure and the 4th laminated construction, to realize the variation of doping concentration in quantum base.It is first
The doping concentration highest of silicon, more impurity are easy electronics in conduction in the quantum base of the first laminated construction first grown
By impurity scattering, multiple scattering wave is interfered with each other, and reinforces Anderson local effect, and certain blocking can be played to electronics and is made
With reducing the movement rate of electronics, be conducive to the extending transversely of electric current, promote being uniformly distributed for electronics.Then second grown
The doping concentration of silicon decreases in the quantum base of laminated construction, but still higher, in the stress base of the first laminated construction accumulation
On plinth, change the growth pattern of crystal, reduce the line defect in crystal, so that Quantum Well carries out spiral growth, forms high density
Nanometer island structure, improve the characteristics of luminescence simultaneously inhibit band gap to fluctuate.Then silicon in the quantum base of the third layer stack structure grown
Doping concentration it is lower, play buffer function between the laminated construction and the laminated construction that undopes of highly doped silicon, while to electricity
Son has certain barrier effect, can be too fast to avoid the migration rate of electronics.The quantum of the 4th laminated construction finally grown
There is no doped silicon in base, piezoelectric field caused by the stress of lattice mismatch generation can be shielded, alleviates quantum confined stark effect,
Improve the radiation recombination efficiency of electrons and holes.
And the first laminated construction is made of three sublayers, the second laminated construction is made of two sublayers, third layer stack structure
It is single layer with the 4th laminated construction, the thickness that such quantum is built can be whole on the direction from n type semiconductor layer to p type semiconductor layer
Reduction trend is presented in body.Since electronics is from n type semiconductor layer injection active layer, in the quantum base of n type semiconductor layer
The quantity of electronics is more, and the migration rate of electronics is also very fast, therefore thicker close to the quantum of n type semiconductor layer base, moves to electronics
The restriction effect of shifting is stronger, it is possible to prevente effectively from electron transfer rate is too fast, is conducive to for electronics being limited in Quantum Well.And by
The negligible amounts of electronics in building close to the quantum of p type semiconductor layer, the migration rate of electronics is also relatively slow, therefore close to p-type half
The quantum base of conductor layer is relatively thin, there is no that limitation, the migration of electronics are easier to electron transfer, is conducive to electron injection
Recombination luminescence in the more Quantum Well of number of cavities, while in view of the Quantum Well of p type semiconductor layer is main luminous trap, disappear
The electron amount of consumption is more, therefore will not cause electronics overflow.
Overall, on the direction from n type semiconductor layer to p type semiconductor layer, the doping of silicon is dense in quantum base
Degree gradually decreases, while the thickness that quantum is built is gradually reduced, and the two cooperates, and the part close to n type semiconductor layer can have
Effect improves the line defect in crystal, while realizing the extension of electric current, while close to the part of p type semiconductor layer, lattice quality compared with
It is good, the final radiation recombination efficiency for improving electrons and holes.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 is a kind of structural schematic diagram of LED epitaxial slice provided in an embodiment of the present invention；
Fig. 2 is the structural schematic diagram of active layer provided in an embodiment of the present invention；
Fig. 3 is the structural schematic diagram that the quantum of the first laminated construction provided in an embodiment of the present invention is built；
Fig. 4 is the structural schematic diagram that the quantum of the second laminated construction provided in an embodiment of the present invention is built；
Fig. 5 is a kind of flow chart of the growing method of LED epitaxial slice provided in an embodiment of the present invention.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
The embodiment of the invention provides a kind of LED epitaxial slices.Fig. 1 is a kind of hair provided in an embodiment of the present invention
The structural schematic diagram of optical diode epitaxial wafer.Referring to Fig. 1, which includes substrate 1, buffer layer 2, N-type half
Conductor layer 3, active layer 4 and p type semiconductor layer 5, buffer layer 2, n type semiconductor layer 3, active layer 4 and p type semiconductor layer 5 are successively
It is layered on substrate 1.
Fig. 2 is the structural schematic diagram of active layer provided in an embodiment of the present invention.Referring to fig. 2, active layer 4 includes stacking gradually
The first laminated construction 41, the second laminated construction 42, third layer stack structure 43 and the 4th laminated construction 44, the first laminated construction
41, the second laminated construction 42, third layer stack structure 43 and the 4th laminated construction 44 include at least one Quantum Well and at least one
A quantum is built, and Quantum Well and quantum build alternately laminated setting.Different labels is respectively adopted in Fig. 2 to be indicated in different laminated construction
Quantum Well and quantum build, 411 indicate the first laminated construction Quantum Well, 412 indicate the first laminated construction quantum build；421
Indicate the Quantum Well of the second laminated construction, 422 indicate that the quantum of the second laminated construction is built；431 indicate the amount of third layer stack structure
Sub- trap, 432 indicate that the quantum of third layer stack structure is built；441 indicate the Quantum Well of the 4th laminated construction, and 442 indicate the 4th lamination
The quantum of structure is built.
Fig. 3 is the structural schematic diagram that the quantum of the first laminated construction provided in an embodiment of the present invention is built.Referring to Fig. 3, first
It includes the first sublayer 412a, the second sublayer 412b and the third sublayer 412c stacked gradually that the quantum of laminated construction 41, which builds 412,.Figure
4 structural schematic diagrams built for the quantum of the second laminated construction provided in an embodiment of the present invention.Referring to fig. 4, the second laminated construction 42
Quantum to build 422 include the 4th sublayer 422a and the 5th sublayer 422b that stack gradually, material, third of the first sublayer 412a
The layer material of 412c, the material of the 4th sublayer 422a, the 4th laminated construction 44 quantum build 442 material and be all made of and undope
Gallium nitride, the material of the second sublayer 412b, the material of the 5th sublayer 422b, third layer stack structure 43 quantum build 432 material
It is all made of the gallium nitride of doped silicon.The average doping concentration that the quantum of first laminated construction 41 builds silicon in 412 is greater than the second lamination
The quantum of structure 42 builds the average doping concentration of silicon in 422, and the average doping that the quantum of the second laminated construction 42 builds silicon in 422 is dense
Degree is greater than the doping concentration of silicon in third layer stack structure 43.
The embodiment of the present invention is divided into four parts by the laminated construction that Quantum Well and quantum are built alternately laminated formation, i.e.,
First laminated construction, the second laminated construction, third layer stack structure and the 4th laminated construction, to realize doping concentration in quantum base
Variation.The doping concentration highest of silicon, more impurity make electronics exist in the quantum base of the first laminated construction grown first
It is easy when conduction by impurity scattering, multiple scattering wave interferes with each other, and reinforces Anderson local effect, can play one to electronics
Fixed barrier effect reduces the movement rate of electronics, is conducive to the extending transversely of electric current, promotes being uniformly distributed for electronics.Then
The doping concentration of silicon decreases in the quantum base of second laminated construction of growth, but still higher, in the first laminated construction product
On the basis of tired stress, change the growth pattern of crystal, reduces the line defect in crystal, so that Quantum Well carries out spiral growth,
Highdensity nanometer island structure is formed, the characteristics of luminescence is improved and band gap is inhibited to fluctuate.Then the third layer stack structure grown
Quantum build in silicon doping concentration it is lower, play buffering between the laminated construction and the laminated construction that undopes of highly doped silicon and make
With, while there is certain barrier effect to electronics, it can be too fast to avoid the migration rate of electronics.The 4th lamination finally grown
The quantum of structure does not have doped silicon in building, and can shield piezoelectric field caused by the stress of lattice mismatch generation, alleviates quantum confinement
Stark effect improves the radiation recombination efficiency of electrons and holes.
And the first laminated construction is made of three sublayers, the second laminated construction is made of two sublayers, third layer stack structure
It is single layer with the 4th laminated construction, the thickness that such quantum is built can be whole on the direction from n type semiconductor layer to p type semiconductor layer
Reduction trend is presented in body.Since electronics is from n type semiconductor layer injection active layer, in the quantum base of n type semiconductor layer
The quantity of electronics is more, and the migration rate of electronics is also very fast, therefore thicker close to the quantum of n type semiconductor layer base, moves to electronics
The restriction effect of shifting is stronger, it is possible to prevente effectively from electron transfer rate is too fast, is conducive to for electronics being limited in Quantum Well.And by
The negligible amounts of electronics in building close to the quantum of p type semiconductor layer, the migration rate of electronics is also relatively slow, therefore close to p-type half
The quantum base of conductor layer is relatively thin, there is no that limitation, the migration of electronics are easier to electron transfer, is conducive to electron injection
Recombination luminescence in the more Quantum Well of number of cavities, while in view of the Quantum Well of p type semiconductor layer is main luminous trap, disappear
The electron amount of consumption is more, therefore will not cause electronics overflow.
Overall, on the direction from n type semiconductor layer to p type semiconductor layer, the doping of silicon is dense in quantum base
Degree gradually decreases, while the thickness that quantum is built is gradually reduced, and the two cooperates, and the part close to n type semiconductor layer can have
Effect improves the line defect in crystal, realizes the extension of electric current, while close to the part of p type semiconductor layer, lattice quality is preferable, most
The radiation recombination efficiency of electrons and holes is improved eventually.
Optionally, the quantum that the quantity that the quantum of the first laminated construction 41 builds 412 can be greater than the second laminated construction 42 is built
422 quantity, the quantum that the quantity that the quantum of the second laminated construction 42 builds 422 can be greater than third layer stack structure 43 build 432
Quantity, the quantum that the quantity that the quantum of third layer stack structure 43 builds 432 can be greater than the 4th laminated construction 44 build 442 quantity.
The quantity that the quantum of highly doped silicon is built is more, and the line defect that can be effectively improved in crystal realizes the extension of electric current；Low-mix silicon or
Do not mix the negligible amounts that the quantum of silicon is built, can be covered on around mainly luminous trap, improve crystal quality, it is final improve electronics and
The radiation recombination efficiency in hole.
Further, the quantum of the first laminated construction 41 builds 412 quantity and the quantum of the second laminated construction 42 builds 422
The difference of quantity, the second laminated construction 42 quantum build 422 quantity and third layer stack structure 43 quantum build 432 quantity it
The difference for the quantity that difference, the quantity at quantum base 432 of third layer stack structure 43 and the quantum of the 4th laminated construction 44 build 442 can phase
Deng.The quantity difference that the quantum of two neighboring laminated construction is built is identical, and the quantum that can gradually change laminated construction builds quantity, avoids
Variation causes adverse effect to lattice structure greatly very much.
Illustratively, the quantum of third layer stack structure 43 builds 432 quantity and the quantum of the 4th laminated construction 44 builds 442
The difference of quantity can be 1~2.The quantity difference that quantum is built is limited in 1~2, amplitude of variation is smaller, is conducive to tie up
Hold whole lattice structure.
Illustratively, it can be 1~2 that the quantum of the 4th laminated construction 44, which builds 442 quantity, third layer stack structure 43
Quantum to build 432 quantity can be 2~3, the quantity that the quantum of the second laminated construction 42 builds 422 can be 3~4
A, the quantity that the quantum of the first laminated construction 41 builds 412 can be 4~5, realize that effect is good.
Optionally, the quantum of the first laminated construction 41 builds the average doping concentration and second laminated construction 42 of silicon in 412
Quantum builds the ratio between average doping concentration of silicon in 422, the quantum of the second laminated construction 42 build in 422 the average doping concentration of silicon with
The ratio between the doping concentration that the quantum of third layer stack structure 43 builds silicon in 432 can be equal.The quantum of two neighboring laminated construction is built
The doping concentration of middle silicon can gradually change the doping concentration of silicon in the quantum base of laminated construction, avoid variation too big than identical
Adverse effect is caused to lattice structure.
Further, the average doping concentration that the quantum of the first laminated construction 41 builds silicon in 412 can be the second lamination knot
The quantum of structure 42 builds 1.5 times~3 times of the average doping concentration of silicon in 422, and silicon is flat in the quantum base of the second laminated construction 42
Equal doping concentration can be 1.5 times~3 times of the doping concentration of silicon in the quantum base 432 of third layer stack structure 43.By mixing for silicon
The ratio between miscellaneous concentration is limited to 1.5 times~3 times, can using silicon doping concentration variation combine epitaxial wafer crystal quality and
The operating voltage of LED is also avoided that variation causes adverse effect to lattice structure greatly very much.
Illustratively, the doping concentration that the quantum of third layer stack structure 43 builds silicon in 432 can be 1*1017/cm3~5*
1017/cm3, such as 3*1017/cm3；The average doping concentration that the quantum of second laminated construction 42 builds silicon in 422 can be 6*1017/
cm3~1*1018/cm3, such as 8*1017/cm3；The average doping concentration of silicon can be in the quantum base 412 of first laminated construction 41
1*1018/cm3~5*1018/cm3, such as 3*1018/cm3, whole realization effect is good.
Optionally, the thickness of the first sublayer 412a, the thickness of the second sublayer 412b, the thickness of third sublayer 412c, the 4th
The thickness of sublayer 422a, the thickness of the 5th sublayer 422b, third layer stack structure 43 quantum build 432 thickness, the 4th lamination knot
The thickness that the quantum of structure 44 builds 442 can be equal, and it is convenient to realize, effect is preferable.
Illustratively, the thickness of the first sublayer 412a, the thickness of the second sublayer 412b, the thickness of third sublayer 412c,
The thickness of four sublayer 422a, the thickness of the 5th sublayer 422b, third layer stack structure 43 quantum build 432 thickness, the 4th lamination
The thickness that the quantum of structure 44 builds 442 all can be 6nm~12nm, such as 9nm.
Optionally, the material of substrate 1 can use sapphire (main material is aluminum oxide), if crystal orientation is [0001]
Sapphire.The material of buffer layer 2 can use undoped gallium nitride or aluminium nitride.The material of n type semiconductor layer 3 can be with
The gallium nitride adulterated using n-type doping (such as silicon).The material of Quantum Well can use InGaN (InGaN), such as InxGa1-xN,
0 < x < 1.The material of p type semiconductor layer 5 can be using the gallium nitride of p-type doping (such as magnesium).
Further, the thickness of buffer layer 2 can be 15nm~30nm, preferably 25nm.The thickness of n type semiconductor layer 3
It can be 2 μm~3 μm, preferably 2.5 μm；The doping concentration of N type dopant can be 10 in n type semiconductor layer 318cm-3~
1019cm-3, preferably 5*1018cm-3.The thickness of Quantum Well can be 1.5nm~3.5nm, preferably 2.5nm；The thickness of active layer 4
Degree can be 130nm~160nm, preferably 145nm.The thickness of p type semiconductor layer 5 can be 50nm~80nm, preferably
65nm；The doping concentration of P-type dopant can be 10 in p type semiconductor layer 618/cm3~1020/cm3, preferably 1019/cm3。
Optionally, as shown in Figure 1, the LED epitaxial slice can also include undoped gallium nitride layer 6, undoped with nitrogen
Change gallium layer 6 to be arranged between buffer layer 2 and n type semiconductor layer 3, be generated with alleviating lattice mismatch between substrate material and gallium nitride
Stress and defect, provide crystal quality preferable growing surface for epitaxial wafer main structure.
In specific implementation, buffer layer 2 is the gallium nitride of the layer of low-temperature epitaxy first in patterned substrate, because
This is also referred to as low temperature buffer layer.The longitudinal growth for carrying out gallium nitride in low temperature buffer layer again, will form multiple mutually independent three
Island structure is tieed up, referred to as three-dimensional nucleating layer；Then it is carried out between each three-dimensional island structure on all three-dimensional island structures
The cross growth of gallium nitride forms two-dimension plane structure, referred to as two-dimentional retrieving layer；The finally high growth temperature one on two-dimensional growth layer
The thicker gallium nitride of layer, referred to as intrinsic gallium nitride layer.By three-dimensional nucleating layer, two-dimentional retrieving layer and intrinsic gallium nitride in the present embodiment
Layer is referred to as undoped gallium nitride layer 6.
Further, the thickness of undoped gallium nitride layer 6 can be 2 μm~3.5 μm, preferably 2.75 μm.
Optionally, which can also include stress release layer 7, and the setting of stress release layer 7 is in N-type half
Between conductor layer 3 and active layer 4, discharged with the stress generated to lattice mismatch between sapphire and gallium nitride, raising has
The crystal quality of active layer is conducive to electrons and holes and shines in active layer progress radiation recombination, improves the internal quantum efficiency of LED,
And then improve the luminous efficiency of LED.
Optionally, as shown in Figure 1, the LED epitaxial slice can also include electronic barrier layer 81, electronic barrier layer
81 are arranged between active layer 4 and p type semiconductor layer 5, carry out non-spoke with hole into p type semiconductor layer to avoid electron transition
It penetrates compound, reduces the luminous efficiency of LED.
Specifically, the material of electronic barrier layer 81 can be using the aluminium gallium nitride alloy (AlGaN) of p-type doping, such as AlyGa1-yN,
0.15 < y < 0.25.
Further, the thickness of electronic barrier layer 81 can be 30nm~50nm, preferably 40nm.
Preferably, as shown in Figure 1, the LED epitaxial slice can also include low temperature P-type layer 82, low temperature P-type layer 82
It is arranged between active layer 4 and electronic barrier layer 81, is caused in active layer to avoid the higher growth temperature of electronic barrier layer
Phosphide atom is precipitated, and influences the luminous efficiency of light emitting diode.
Specifically, the material of low temperature P-type layer 82 can be identical as the material of p type semiconductor layer 5.In the present embodiment,
The material of low temperature P-type layer 82 can be the gallium nitride of p-type doping.
Further, the thickness of low temperature P-type layer 82 can be 10nm~50nm, preferably 30nm；P in low temperature P-type layer 82
The doping concentration of type dopant can be 1018/cm3~1020/cm3, preferably 1019/cm3。
Optionally, as shown in Figure 1, the LED epitaxial slice can also include contact layer 9, contact layer 9 is arranged in p-type
On semiconductor layer 5, to form Ohmic contact between the electrode or transparent conductive film that are formed in chip fabrication technique.
Specifically, the material of contact layer 9 can be using the InGaN or gallium nitride of p-type doping.
Further, the thickness of contact layer 9 can be 5nm~300nm, preferably 100nm；P-type dopant in contact layer 9
Doping concentration can be 1021/cm3~1022/cm3, preferably 5*1021/cm3。
The embodiment of the invention provides a kind of growing method of LED epitaxial slice, it is suitable for growing shown in FIG. 1
LED epitaxial slice.Fig. 5 is a kind of process of the growing method of LED epitaxial slice provided in an embodiment of the present invention
Figure.Referring to Fig. 5, which includes:
Step 201: a substrate is provided.
Optionally, which may include:
Controlled at 1000 DEG C~1100 DEG C (preferably 1050 DEG C), pressure be 200torr~500torr (preferably
350torr), 5 minutes~6 minutes (preferably 5.5 minutes) annealings are carried out to substrate in hydrogen atmosphere.
The surface for cleaning substrate through the above steps avoids being conducive to the life for improving epitaxial wafer in impurity incorporation epitaxial wafer
Long quality.
Step 202: successively grown buffer layer, n type semiconductor layer, active layer and p type semiconductor layer on substrate.
In the present embodiment, active layer includes the first laminated construction, the second laminated construction, third layer stack knot stacked gradually
Structure and the 4th laminated construction, the first laminated construction, the second laminated construction, third layer stack structure and the 4th laminated construction include to
A few Quantum Well and at least one quantum are built, and Quantum Well and quantum build alternately laminated setting；The quantum of first laminated construction is built
Including the first sublayer, the second sublayer and third sublayer stacked gradually, it includes stacking gradually that the quantum of the second laminated construction, which is built,
4th sublayer and the 5th sublayer, material, the material of third sublayer, the material of the 4th sublayer, the 4th laminated construction of the first sublayer
Quantum build material be all made of the gallium nitride to undope, the material of the second sublayer, the material of the 5th sublayer, third layer stack structure
The material built of quantum be all made of the gallium nitride of doped silicon；The average doping concentration of silicon is greater than in the quantum base of first laminated construction
The quantum of second laminated construction build in silicon average doping concentration, the quantum of the second laminated construction build in silicon average doping concentration
Greater than the doping concentration of silicon in third layer stack structure.
Optionally, which may include:
The first step, controlled at 530 DEG C~560 DEG C (preferably 545 DEG C), pressure is that 200torr~500torr is (excellent
It is selected as 350torr), grown buffer layer on substrate；
Second step, controlled at 1000 DEG C~1100 DEG C (preferably 1050 DEG C), pressure is 100torr~500torr
(preferably 300torr), grows n type semiconductor layer on the buffer layer；
Third step grows active layer on n type semiconductor layer；Wherein, the growth temperature of Quantum Well is 760 DEG C~780 DEG C
(preferably 770 DEG C), pressure 200torr；The growth temperature that quantum is built is 860 DEG C~890 DEG C (preferably 875 DEG C), pressure
For 200torr；
4th step, controlled at 940 DEG C~980 DEG C (preferably 960 DEG C), pressure is that 200torr~600torr is (excellent
It is selected as 400torr), the growing P-type semiconductor layer on active layer.
Optionally, before second step, which can also include:
Undoped gallium nitride layer is grown on the buffer layer.
Correspondingly, n type semiconductor layer is grown on undoped gallium nitride layer.
Specifically, undoped gallium nitride layer is grown on the buffer layer, may include:
Controlled at 1000 DEG C~1100 DEG C (preferably 1050 DEG C), pressure be 200torr~600torr (preferably
400torr), undoped gallium nitride layer is grown on the buffer layer.
Optionally, before third step, which can also include:
The growth stress releasing layer on n type semiconductor layer.
Correspondingly, active layer is grown on stress release layer.
Optionally, before the 4th step, which can also include:
Electronic barrier layer is grown on active layer.
Correspondingly, p type semiconductor layer is grown on electronic barrier layer.
Specifically, electronic barrier layer is grown on active layer, may include:
Controlled at 930 DEG C~970 DEG C (preferably 950 DEG C), pressure 100torr grows electronics on active layer
Barrier layer.
Preferably, before growing electronic barrier layer on active layer, which can also include:
The growing low temperature P-type layer on active layer.
Correspondingly, electronic barrier layer is grown in low temperature P-type layer.
Specifically, the growing low temperature P-type layer on active layer may include:
Controlled at 600 DEG C~850 DEG C (preferably 750 DEG C), pressure be 100torr~600torr (preferably
300torr), the growing low temperature P-type layer on active layer.
Optionally, after the 4th step, which can also include:
Contact layer is grown on p type semiconductor layer.
Specifically, contact layer is grown on p type semiconductor layer, may include:
Controlled at 850 DEG C~1050 DEG C (preferably 950 DEG C), pressure be 100torr~300torr (preferably
200torr), contact layer is grown on p type semiconductor layer.
It should be noted that after above-mentioned epitaxial growth terminates, can first by temperature be reduced to 650 DEG C~850 DEG C (preferably
It is 750 DEG C), the annealing of 5 minutes~15 minutes (preferably 10 minutes) is carried out to epitaxial wafer in nitrogen atmosphere, then again
The temperature of epitaxial wafer is reduced to room temperature.
Control temperature, pressure each mean temperature, pressure in the reaction chamber of control growth epitaxial wafer, and specially metal is organic
Compound chemical gaseous phase deposition (English: Metal-organic Chemical Vapor Deposition, referred to as: MOCVD) set
Standby reaction chamber, such as Veeco K465i MOCVD or Veeco C4 MOCVD.With hydrogen or nitrogen or hydrogen when realization
The mixed gas of gas and nitrogen is as carrier gas, trimethyl gallium or triethyl-gallium as gallium source, and high-purity ammonia is as nitrogen source, trimethyl
Indium is as indium source, and trimethyl aluminium is as silicon source, and silane is as silicon source, and two luxuriant magnesium are as magnesium source.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all in spirit of the invention and
Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of LED epitaxial slice, the LED epitaxial slice includes substrate, buffer layer, n type semiconductor layer, has
Active layer and p type semiconductor layer, the buffer layer, the n type semiconductor layer, the active layer and the p type semiconductor layer are successively
Stacking is over the substrate；It is characterized in that, the active layer includes the first laminated construction stacked gradually, the second lamination knot
Structure, third layer stack structure and the 4th laminated construction, first laminated construction, second laminated construction, the third layer stack
Structure and the 4th laminated construction include that at least one Quantum Well and at least one quantum are built, the Quantum Well and the amount
Son builds alternately laminated setting；It includes the first sublayer stacked gradually, the second sublayer and that the quantum of first laminated construction, which is built,
Three sublayers, it includes the 4th sublayer and the 5th sublayer stacked gradually, first sublayer that the quantum of second laminated construction, which is built,
Material, the material of the third sublayer, the material of the 4th sublayer, the 4th laminated construction quantum build material it is equal
Using the gallium nitride to undope, the material of second sublayer, the material of the 5th sublayer, the third layer stack structure amount
The material that son is built is all made of the gallium nitride of doped silicon；The average doping concentration of silicon is greater than in the quantum base of first laminated construction
The quantum of second laminated construction build in silicon average doping concentration, the quantum of second laminated construction build in silicon be averaged
Doping concentration is greater than the doping concentration of silicon in the third layer stack structure.
2. LED epitaxial slice according to claim 1, which is characterized in that the quantum of first laminated construction is built
Quantity be greater than the quantity that the quantum of second laminated construction is built, the quantity that the quantum of second laminated construction is built is greater than institute
The quantity that the quantum of third layer stack structure is built is stated, the quantity that the quantum of the third layer stack structure is built is greater than the 4th lamination knot
The quantity that the quantum of structure is built.
3. LED epitaxial slice according to claim 2, which is characterized in that the quantum of first laminated construction is built
Quantity and second laminated construction the quantum difference of quantity, the quantity built of quantum of second laminated construction and the institute built
State the difference of quantity at the quantum base of third layer stack structure, the quantity that the quantum of the third layer stack structure is built and the 4th lamination
The difference for the quantity that the quantum of structure is built is equal.
4. LED epitaxial slice according to claim 3, which is characterized in that the quantum of the third layer stack structure is built
Quantity and the 4th laminated construction quantum build quantity difference be 1~2.
5. LED epitaxial slice according to claim 4, which is characterized in that the quantum of the 4th laminated construction is built
Quantity be 1~2.
6. LED epitaxial slice according to any one of claims 1 to 4, which is characterized in that the first lamination knot
The quantum of structure build in the average doping concentration of silicon and the quantum of second laminated construction build in silicon the ratio between average doping concentration,
The quantum of second laminated construction build in the average doping concentration of silicon and the quantum base of the third layer stack structure silicon mix
The ratio between miscellaneous concentration is equal.
7. LED epitaxial slice according to claim 6, which is characterized in that the quantum of first laminated construction is built
The average doping concentration of middle silicon is 1.5 times~3 times of the average doping concentration of silicon during the quantum of second laminated construction is built, institute
The average doping concentration for stating silicon in the quantum base of the second laminated construction is the doping of silicon in the quantum base of the third layer stack structure
1.5 times of concentration~3 times.
8. LED epitaxial slice according to claim 7, which is characterized in that the quantum of the third layer stack structure is built
The doping concentration of middle silicon is 1*1017/cm3~5*1017/cm3。
9. LED epitaxial slice according to claim 8, which is characterized in that the thickness of first sublayer, described
The thickness of second sublayer, the thickness of the third sublayer, the thickness of the 4th sublayer, the 5th sublayer thickness, described
The thickness that the quantum of thickness, the 4th laminated construction that the quantum of third layer stack structure is built is built is equal.
10. a kind of growing method of LED epitaxial slice, which is characterized in that the growing method includes:
One substrate is provided；
Successively grown buffer layer, n type semiconductor layer, active layer and p type semiconductor layer over the substrate；
Wherein, the active layer includes the first laminated construction, the second laminated construction, third layer stack structure and the 4th stacked gradually
Laminated construction, first laminated construction, second laminated construction, the third layer stack structure and the 4th laminated construction
It include that at least one Quantum Well and at least one quantum are built, the Quantum Well and the quantum build alternately laminated setting；It is described
It includes the first sublayer, the second sublayer and the third sublayer stacked gradually, the second lamination knot that the quantum of first laminated construction, which is built,
The quantum of structure is built includes the 4th sublayer and the 5th sublayer stacked gradually, the material of first sublayer, the third sublayer
Material, the material of the 4th sublayer, the material that the quantum of the 4th laminated construction is built are all made of the gallium nitride to undope, institute
It states the material of the second sublayer, the material of the 5th sublayer, the material that the quantum of the third layer stack structure is built and is all made of doping
The gallium nitride of silicon；The average doping concentration of silicon is greater than the amount of second laminated construction in the quantum base of first laminated construction
Son build in silicon average doping concentration, the quantum of second laminated construction build in the average doping concentration of silicon be greater than the third
The doping concentration of silicon in laminated construction.
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| CN105990479A (en) * | 2015-02-11 | 2016-10-05 | 晶能光电（常州）有限公司 | GaN-based light emitting diode epitaxial structure and manufacturing method thereof |
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| CN107293619A (en) * | 2017-06-30 | 2017-10-24 | 华灿光电（浙江）有限公司 | A kind of LED epitaxial slice and its manufacture method |
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| CN105990479A (en) * | 2015-02-11 | 2016-10-05 | 晶能光电（常州）有限公司 | GaN-based light emitting diode epitaxial structure and manufacturing method thereof |
| CN106887493A (en) * | 2017-02-15 | 2017-06-23 | 华灿光电（浙江）有限公司 | A kind of epitaxial wafer of light emitting diode and preparation method thereof |
| CN107293619A (en) * | 2017-06-30 | 2017-10-24 | 华灿光电（浙江）有限公司 | A kind of LED epitaxial slice and its manufacture method |
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