CN109844185A - 用于生长SiC晶体的SiC原料的制备方法和制备装置 - Google Patents

用于生长SiC晶体的SiC原料的制备方法和制备装置 Download PDF

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Publication number
CN109844185A
CN109844185A CN201780054385.1A CN201780054385A CN109844185A CN 109844185 A CN109844185 A CN 109844185A CN 201780054385 A CN201780054385 A CN 201780054385A CN 109844185 A CN109844185 A CN 109844185A
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China
Prior art keywords
graphite crucible
sic
heating device
separator
raw material
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CN201780054385.1A
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CN109844185B (zh
Inventor
彭同华
刘春俊
王波
张平
邹宇
赵宁
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Beijing Tankeblue Semiconductor Co ltd
Xinjiang Tankeblue Semiconductor Co ltd
Tankeblue Semiconductor Co Ltd
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Beijing Tankeblue Semiconductor Co ltd
Xinjiang Tankeblue Semiconductor Co ltd
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

提供用于生长SiC晶体的SiC原料的制备方法和装置。该方法包括：将SiC粉料装入第一石墨坩埚中，在第一石墨坩埚上倒置安装第二石墨坩埚；将安装好的两个石墨坩埚放入加热装置中，将加热装置抽真空并升温至预设温度；其中，第一石墨坩埚位于相对高温区，第二石墨坩埚位于相对低温区，SiC粉料升华并被输运至第二石墨坩埚中而结晶，以获得结晶的SiC原料，该原料将被用于生长SiC晶体。该装置包括第一、第二石墨坩埚以及加热装置，且自第二石墨坩埚底部向上设置隔离件，该隔离件与第二石墨坩埚的侧壁间隔预定距离。该方法和装置能够降低由此原料制得的SiC晶体中的杂质含量，减少微观包裹物，降低位错密度，提供中后期SiC晶体的生长速率和产率。

Description

PCT国内申请，说明书已公开。

Claims (16)

  1. PCT国内申请，权利要求书已公开。
CN201780054385.1A 2017-03-30 2017-03-30 用于生长SiC晶体的SiC原料的制备方法和制备装置 Active CN109844185B (zh)

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PCT/CN2017/078726 WO2018176302A1 (zh) 2017-03-30 2017-03-30 用于生长SiC晶体的SiC原料的制备方法和制备装置

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112877771A (zh) * 2021-01-04 2021-06-01 山西烁科晶体有限公司 一种单晶生长的坩埚和方法
CN113622029A (zh) * 2021-08-12 2021-11-09 山东天岳先进科技股份有限公司 具有多晶块的坩埚组件及其制备方法和由其制得的碳化硅单晶

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8163086B2 (en) * 2007-08-29 2012-04-24 Cree, Inc. Halogen assisted physical vapor transport method for silicon carbide growth
CN102575383A (zh) * 2010-02-12 2012-07-11 住友电气工业株式会社 制造碳化硅晶体的方法以及碳化硅晶体
CN102597339A (zh) * 2010-04-26 2012-07-18 住友电气工业株式会社 碳化硅晶体和制造碳化硅晶体的方法
CN104862780A (zh) * 2015-05-05 2015-08-26 山东天岳先进材料科技有限公司 一种制备无色碳化硅晶体的方法及装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100595144C (zh) * 2008-06-04 2010-03-24 山东大学 用于半导体单晶生长的高纯碳化硅粉的人工合成方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8163086B2 (en) * 2007-08-29 2012-04-24 Cree, Inc. Halogen assisted physical vapor transport method for silicon carbide growth
CN102575383A (zh) * 2010-02-12 2012-07-11 住友电气工业株式会社 制造碳化硅晶体的方法以及碳化硅晶体
CN102597339A (zh) * 2010-04-26 2012-07-18 住友电气工业株式会社 碳化硅晶体和制造碳化硅晶体的方法
CN104862780A (zh) * 2015-05-05 2015-08-26 山东天岳先进材料科技有限公司 一种制备无色碳化硅晶体的方法及装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112877771A (zh) * 2021-01-04 2021-06-01 山西烁科晶体有限公司 一种单晶生长的坩埚和方法
CN113622029A (zh) * 2021-08-12 2021-11-09 山东天岳先进科技股份有限公司 具有多晶块的坩埚组件及其制备方法和由其制得的碳化硅单晶
CN113622029B (zh) * 2021-08-12 2022-11-29 山东天岳先进科技股份有限公司 具有多晶块的坩埚组件及其制备方法和由其制得的碳化硅单晶

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JP6829767B2 (ja) 2021-02-10
WO2018176302A1 (zh) 2018-10-04
JP2019535632A (ja) 2019-12-12
CN109844185B (zh) 2020-11-03

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Application publication date: 20190604

Assignee: Shenzhen Reinvested Tianke Semiconductor Co.,Ltd.

Assignor: TANKEBLUE SEMICONDUCTOR Co.,Ltd.|XINJIANG TANKEBLUE SEMICONDUCTOR Co.,Ltd.

Contract record no.: X2023990000679

Denomination of invention: Preparation method and device for SiC raw materials used for growing SiC crystals

Granted publication date: 20201103

License type: Common License

Record date: 20230725