CN101724893A - 一种制备高纯半绝缘碳化硅晶体的方法 - Google Patents
一种制备高纯半绝缘碳化硅晶体的方法 Download PDFInfo
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Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2012088996A1 (zh) * | 2010-12-31 | 2012-07-05 | 中国科学院物理研究所 | 半绝缘碳化硅单晶及其生长方法 |
CN104233458A (zh) * | 2014-09-30 | 2014-12-24 | 中国科学院上海硅酸盐研究所 | 一种碳化硅晶体生长用的石墨籽晶托 |
CN104947182A (zh) * | 2015-07-16 | 2015-09-30 | 中国电子科技集团公司第四十六研究所 | 一种快速生长大尺寸高纯半绝缘碳化硅单晶的方法 |
CN105821471A (zh) * | 2016-05-10 | 2016-08-03 | 山东大学 | 一种低应力高纯半绝缘SiC 单晶的制备方法 |
CN106757355A (zh) * | 2016-12-09 | 2017-05-31 | 河北同光晶体有限公司 | 一种碳化硅宝石的生长方法 |
CN107699955A (zh) * | 2017-08-30 | 2018-02-16 | 昆明理工大学 | 一种利用微波加热去除碳化硅单晶缺陷中及表面有机杂质的方法 |
CN109576792A (zh) * | 2019-02-02 | 2019-04-05 | 福建北电新材料科技有限公司 | 碳化硅单晶生长装置及碳化硅单晶制备设备 |
CN111647945A (zh) * | 2018-05-18 | 2020-09-11 | 北京华进创威电子有限公司 | 一种氮化铝晶体的制备方法 |
JP2021070622A (ja) * | 2019-10-29 | 2021-05-06 | エスケイシー・カンパニー・リミテッドSkc Co., Ltd. | 炭化珪素ウエハ及び炭化珪素ウエハの製造方法 |
CN113774494A (zh) * | 2021-11-15 | 2021-12-10 | 浙江大学杭州国际科创中心 | 一种半绝缘型碳化硅单晶片剥离方法及剥离装置 |
CN113818083A (zh) * | 2020-06-18 | 2021-12-21 | 盛新材料科技股份有限公司 | 半绝缘单晶碳化硅粉末的制备方法 |
CN114574968A (zh) * | 2022-02-14 | 2022-06-03 | 江苏集芯半导体硅材料研究院有限公司 | 碳化硅晶体生长装置 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
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US6814801B2 (en) * | 2002-06-24 | 2004-11-09 | Cree, Inc. | Method for producing semi-insulating resistivity in high purity silicon carbide crystals |
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Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012088996A1 (zh) * | 2010-12-31 | 2012-07-05 | 中国科学院物理研究所 | 半绝缘碳化硅单晶及其生长方法 |
US9893152B2 (en) | 2010-12-31 | 2018-02-13 | Institute Of Physics, Chinese Academy Of Sciences | Semi-insulating silicon carbide monocrystal and method of growing the same |
CN104233458A (zh) * | 2014-09-30 | 2014-12-24 | 中国科学院上海硅酸盐研究所 | 一种碳化硅晶体生长用的石墨籽晶托 |
CN104947182A (zh) * | 2015-07-16 | 2015-09-30 | 中国电子科技集团公司第四十六研究所 | 一种快速生长大尺寸高纯半绝缘碳化硅单晶的方法 |
CN105821471A (zh) * | 2016-05-10 | 2016-08-03 | 山东大学 | 一种低应力高纯半绝缘SiC 单晶的制备方法 |
CN106757355A (zh) * | 2016-12-09 | 2017-05-31 | 河北同光晶体有限公司 | 一种碳化硅宝石的生长方法 |
CN107699955A (zh) * | 2017-08-30 | 2018-02-16 | 昆明理工大学 | 一种利用微波加热去除碳化硅单晶缺陷中及表面有机杂质的方法 |
CN111647945A (zh) * | 2018-05-18 | 2020-09-11 | 北京华进创威电子有限公司 | 一种氮化铝晶体的制备方法 |
CN109576792A (zh) * | 2019-02-02 | 2019-04-05 | 福建北电新材料科技有限公司 | 碳化硅单晶生长装置及碳化硅单晶制备设备 |
JP2021070622A (ja) * | 2019-10-29 | 2021-05-06 | エスケイシー・カンパニー・リミテッドSkc Co., Ltd. | 炭化珪素ウエハ及び炭化珪素ウエハの製造方法 |
JP7042995B2 (ja) | 2019-10-29 | 2022-03-29 | セニック・インコーポレイテッド | 炭化珪素ウエハ及び炭化珪素ウエハの製造方法 |
US11708644B2 (en) | 2019-10-29 | 2023-07-25 | Senic Inc. | Method for preparing SiC ingot, method for preparing SiC wafer and the SiC wafer prepared therefrom |
CN113818083A (zh) * | 2020-06-18 | 2021-12-21 | 盛新材料科技股份有限公司 | 半绝缘单晶碳化硅粉末的制备方法 |
CN113818082A (zh) * | 2020-06-18 | 2021-12-21 | 盛新材料科技股份有限公司 | 高纯度半绝缘单晶碳化硅晶片与碳化硅晶体 |
CN113774494A (zh) * | 2021-11-15 | 2021-12-10 | 浙江大学杭州国际科创中心 | 一种半绝缘型碳化硅单晶片剥离方法及剥离装置 |
CN114574968A (zh) * | 2022-02-14 | 2022-06-03 | 江苏集芯半导体硅材料研究院有限公司 | 碳化硅晶体生长装置 |
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Address after: 100190 Beijing City, Haidian District Zhongguancun South Street No. 8 Patentee after: INSTITUTE OF PHYSICS, CHINESE ACADEMY OF SCIENCES Patentee after: TANKEBLUE SEMICONDUCTOR Co.,Ltd. Address before: 100190 Beijing City, Haidian District Zhongguancun South Street No. 8 Patentee before: INSTITUTE OF PHYSICS, CHINESE ACADEMY OF SCIENCES Patentee before: TANKEBLUE SEMICONDUCTOR Co.,Ltd. |
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Application publication date: 20100609 Assignee: Shenzhen Reinvested Tianke Semiconductor Co.,Ltd. Assignor: TANKEBLUE SEMICONDUCTOR Co.,Ltd. Contract record no.: X2023990000683 Denomination of invention: A method for preparing high-purity semi insulating silicon carbide crystals Granted publication date: 20130904 License type: Common License Record date: 20230725 |
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