CN109819662B - 溅镀靶、积层膜的制造方法、积层膜及磁记录媒体 - Google Patents
溅镀靶、积层膜的制造方法、积层膜及磁记录媒体 Download PDFInfo
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- 238000005477 sputtering target Methods 0.000 title claims abstract description 40
- 230000005291 magnetic effect Effects 0.000 title claims description 90
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 229910052751 metal Inorganic materials 0.000 claims abstract description 55
- 239000002184 metal Substances 0.000 claims abstract description 53
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 45
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 44
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 30
- 229910052707 ruthenium Inorganic materials 0.000 claims abstract description 28
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Inorganic materials O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 11
- 238000004544 sputter deposition Methods 0.000 claims description 9
- 229910052697 platinum Inorganic materials 0.000 claims description 7
- 239000010410 layer Substances 0.000 description 87
- 239000000843 powder Substances 0.000 description 33
- 239000006249 magnetic particle Substances 0.000 description 16
- 230000005415 magnetization Effects 0.000 description 15
- 239000002245 particle Substances 0.000 description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 238000005245 sintering Methods 0.000 description 11
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 10
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 description 10
- 239000000203 mixture Substances 0.000 description 8
- 229910052681 coesite Inorganic materials 0.000 description 7
- 229910052906 cristobalite Inorganic materials 0.000 description 7
- 239000000377 silicon dioxide Substances 0.000 description 7
- 229910052682 stishovite Inorganic materials 0.000 description 7
- 229910052905 tridymite Inorganic materials 0.000 description 7
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(II) oxide Inorganic materials [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 6
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- 239000000758 substrate Substances 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- UBEWDCMIDFGDOO-UHFFFAOYSA-N cobalt(II,III) oxide Inorganic materials [O-2].[O-2].[O-2].[O-2].[Co+2].[Co+3].[Co+3] UBEWDCMIDFGDOO-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
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- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 5
- 229910000531 Co alloy Inorganic materials 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
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- 150000002739 metals Chemical class 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 3
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- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
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- 239000011261 inert gas Substances 0.000 description 2
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- 239000002994 raw material Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910020707 Co—Pt Inorganic materials 0.000 description 1
- 229910000929 Ru alloy Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
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- 238000005549 size reduction Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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Abstract
本发明的溅镀靶含有Co与选自由Cr及Ru组成的群中之一种以上的金属作为金属成分,上述选自由Cr及Ru组成的群中之一种以上的金属的含量相对于Co的含量的摩尔比为1/2以上,且含有Nb2O5作为金属氧化物成分。
Description
技术领域
本发明涉及一种含有Co与Cr及/或Ru作为金属成分,例如适宜用于形成垂直磁记录媒体的基底层与磁性层之间的中间层等的溅镀靶、积层膜的制造方法、积层膜及磁记录媒体,尤其提出一种可有助于硬磁碟驱动机的高密度化的技术。
背景技术
在硬磁碟驱动机中,在相对于记录面垂直的方向进行磁记录的垂直磁记录方式被实用化,该方式与此前的面内磁记录方式相比,能够进行高密度的记录,因此被广泛采用。
垂直磁记录方式的磁记录媒体大致是在铝或玻璃等基板上依序积层密接层、软磁性层、晶种(Seed)层、Ru层等基底层、中间层、磁性层及保护层等而构成的。其中,磁性层在下部存在以Co作为主成分的Co-Pt系合金等中分散有SiO2或其他金属氧化物的颗粒(グラニュラ)膜,具有较高的饱和磁化Ms与磁各向异性Ku。又,积层于磁性层下方侧的中间层是由Co-Cr-Ru系合金等中分散有相同的金属氧化物的组织结构所构成的,有为了成为非磁性而含有相对较多的Ru或Cr等的情形。
在此种磁性层及中间层中,成为非磁性材料的上述金属氧化物向沿垂直方向配向的Co合金等磁性粒子的晶界析出,降低磁性粒子间的磁相互作用,由此实现杂讯特性的提高及较高的记录密度。
再者,一般而言,磁性层或中间层等各层通过使用具有特定的组成或组织的溅镀靶在基板上进行溅镀而制膜形成。作为此种技术,先前有专利文献1所记载等。
背景技术文献
专利文献
专利文献1:日本专利第5960287号公报。
发明内容
发明所欲解决的问题
且说,为了实现硬磁碟驱动机的高密度化,要求磁各向异性Ku的增大以确保热稳定性,及磁性粒子的较高的磁分离性以提高解析度。
然而,在如上所述的饱和磁化Ms较高的磁性层中,由于磁性粒子间的交换耦合较为牢固,故而磁性粒子彼此的磁分离性不足。此处,若为了提高磁分离性而添加较多的金属氧化物,则金属氧化物进入磁性粒子内而导致磁性粒子的结晶性劣化,随之饱和磁化Ms及磁各向异性Ku降低。
本发明将解决现有技术所存在的此种问题作为问题,其目的在于提供一种不会大幅地降低磁记录媒体的磁性层的磁各向异性而可提高磁性粒子间的磁分离性的溅镀靶、积层膜的制造方法、积层膜及磁记录媒体。
解决问题的技术手段
发明人努力进行研究,结果获得如下见解,即,作为分散于磁性层及中间层的磁性材料即Co合金中的非磁性材料的金属氧化物,除使用此前所使用的SiO2等以外或取而代之而使用Nb2O5,由此,即便不那么增大金属氧化物的含量,亦可显著地改善磁性粒子间的磁分离性。又,发现由此可维持以Co-Pt为主体的磁性层的较高的饱和磁化Ms与较高的磁各向异性Ku。认为其原因在于,Nb2O5与Co的润湿性适度,且即便缺失一部分氧,亦可作为稳定的氧化物存在,但本发明并不限定于此种理论。
基于此种见解,本发明的溅镀靶含有Co与选自由Cr及Ru组成的群中之一种以上的金属作为金属成分,上述选自由Cr及Ru组成的群中之一种以上的金属的含量相对于Co的含量的摩尔比为1/2以上,且含有Nb2O5作为金属氧化物成分。
此处,在本发明的溅镀靶中,优选仅含有Nb2O5作为金属氧化物成分,Nb2O5的含量为5mol%~15mol%。
或者,在本发明的溅镀靶中,优选Nb2O5的含量为2mol%~5mol%,进一步含有Nb2O5以外的金属氧化物,包含Nb2O5的金属氧化物的合计含量为30vol%以上。
在此情形时,优选上述Nb2O5以外的金属氧化物是选自由TiO2、SiO2、B2O3、CoO、Co3O4、Cr2O3、Ta2O5、ZnO及MnO组成的群中的至少一种金属氧化物。
本发明的溅镀靶适宜以15mol%~60mol%含有Co。
在本发明的溅镀靶中,优选含有Cr或Ru或其两者,且将Cr及Ru的合计含量设为30mol%~60mol%。
再者,本发明的溅镀靶可设为进一步以5mol%~30mol%含有Pt作为金属成分。
本发明的积层膜的制造方法包括:通过使用上述任一项所述的溅镀靶的溅镀,在含有Ru的基底层上形成中间层。
本发明的积层膜的制造方法优选进一步包括:通过使用含有Co及Pt作为金属成分的溅镀靶的溅镀,在上述中间层上形成磁性层。
本发明的积层膜具有:基底层:含有Ru;中间层:形成于上述基底层上,含有Co与选自由Cr及Ru组成的群中之一种以上的金属作为金属成分,上述选自由Cr及Ru组成的群中之一种以上的金属的含量相对于Co的含量的摩尔比为1/2以上;以及磁性层:形成于上述中间层上,含有Co及Pt作为金属成分;上述中间层含有Nb2O5作为金属氧化物成分。
本发明的磁记录媒体具备上述积层膜。
发明的效果
根据本发明,通过含有Nb2O5作为金属氧化物成分,可同时实现磁性粒子间的良好的磁分离性与较高的磁各向异性Ku。
附图说明
图1是表示实施例中所制造的积层膜的层构成的示意图。
具体实施方式
以下,对本发明的实施方案进行详细说明。
本发明的一个实施方案的溅镀靶的特征在于:其含有Co与选自由Cr及Ru组成的群中之一种以上的金属作为金属成分,上述选自由Cr及Ru组成的群中之一种以上的金属的含量相对于Co的含量的摩尔比为1/2以上,且含有Nb2O5作为金属氧化物成分。
更具体而言,具有在Co与选自由Cr及Ru组成的群中之一种以上的金属的合金中分散有含有Nb2O5的金属氧化物的组织结构。
该溅镀靶尤其优选为用于形成位于垂直磁记录方式的磁记录媒体的基底层与磁性层之间的中间层。在此情形时,在通过使用该溅镀靶的溅镀所成膜的中间层中,上述金属成分构成磁性层的磁性粒子的基底,并且含有Nb2O5的金属氧化物成为包含磁性层的金属氧化物的非磁性晶界材料的基底,提高沿垂直方向配向的磁性粒子的配向性,并且使晶界材料均匀地分布于周围,有效地降低磁性粒子间的磁相互作用。
(组成)
溅镀靶的金属成分主要由Co构成,除此以外,亦含有Cr及Ru中的至少一种。金属成分尤其是含有Cr及/或Ru的Co合金。
Co的含量优选设为15mol%~60mol%。若Co过多,则有成为强磁性的忧虑,另一方面,若Co过少,则有hcp结构不稳定、或上部磁性层的晶格常数大幅地变化的可能性。就该观点而言,Co含量更优选为30mol%~60mol%。
在含有Cr或Ru或其两者作为金属成分的情形时,Cr及Ru的合计含量优选设为30mol%~60mol%。若Cr及Ru的合计含量过多,则有hcp结构不稳定、或上部磁性层的晶格常数大幅地变化的忧虑,另一方面,若Cr及Ru的合计含量过少,则有成为强磁性的忧虑。
选自由Cr及Ru组成的群中之一种以上的金属优选以相对于Co的含量的摩尔比成为1/2以上的量被含有。其原因在于,即,若选自由Cr及Ru组成的群中之一种以上的金属的含量相对于Co的含量的摩尔比未达1/2,则有成为强磁性的忧虑。就该观点而言,更优选选自由Cr及Ru组成的群中之一种以上的金属的含量相对于Co的含量的摩尔比为2/3以上。另一方面,若该摩尔比过大,则有hcp结构不稳定、或上部磁性层的晶格常数大幅地变化的可能性,因此该摩尔比优选设为3以下,更优选设为1以下。
本发明的实施方案的溅镀靶可进一步以5mol%~30mol%含有Pt作为金属成分。通过含有Pt,具有可使磁性层的晶格常数一致而使磁性层的结晶性变得良好,且可提高磁性层与中间层的界面附近的磁各向异性的优点。更优选将Pt的合计含量设为15mol%~25mol%。再者,所述金属元素的大部分通常以金属成分的形式含有,但亦有因于下述制造时的烧结中氧化而使一部分作为金属氧化物含有的情况。
而且,本发明的溅镀靶至少含有Nb2O5作为金属氧化物成分。Nb2O5与现有的溅镀靶中作为主要的金属氧化物的TiO2或SiO2等相比,与Co合金粒的分离性优异,而且润湿性良好,由金属氧化物所构成的晶界宽度较宽,且可减小宽度的分散,因此通过含有Nb2O5,可不减小磁性层的粒径而提高粒子间的分离性,同时实现较高的磁各向异性与磁簇尺寸(磁気クラスタサイズ)降低。
Nb2O5的含量适宜设为5mol%~15mol%。其原因在于,即,在Nb2O5的含量较少的情形时,有无法充分地获得上述效果的可能性,另一方面,在Nb2O5的含量较多的情形时,有金属粒子变小而导致上部磁性层的结晶性降低的忧虑。
另一方面,本发明的实施方案的溅镀靶中,作为金属氧化物成分,除了含有Nb2O5以外,亦可含有TiO2或SiO2、B2O3、CoO、Co3O4、Cr2O3、Ta2O5、ZnO及MnO等金属氧化物。尤其是在含有此种金属氧化物的情形时,即便Nb2O5的含量为2mol%~5mol%,亦可获得良好的效果。
在含有Nb2O5以外的如上所述的金属氧化物的情形时,包含Nb2O5在内的所有金属氧化物的合计含量优选为30vol%以上。其原因在于,若金属氧化物的合计含量未达30vol%,则有上部磁性层的磁性粒子的分离变得不充分的忧虑。就该原因而言,金属氧化物的合计含量进一步适宜为35vol%以上。
另一方面,在金属氧化物的合计含量过多的情形时,认为金属粒子变小而导致上部磁性层的结晶性降低,因此金属氧化物的合计含量优选设为60vol%以下。
(溅镀靶的制造方法)
上述溅镀靶可使用粉末烧结法进行制造,作为其具体例,如以下所述。
首先,作为金属粉末,准备Co粉末、Cr粉末及/或Ru粉末、及进一步视需要的Pt粉末。金属粉末不仅可为单元素的粉末,且亦可为合金的粉末,其粒径为1μm~10μm的范围内就能够均匀混合而可防止偏析与粗大结晶化的方面而言优选。在金属粉末的粒径大于10μm的情形时,有下述氧化物粒子无法均匀地分散的情况,又,在小于1μm的情形时,有受金属粉末氧化的影响而导致溅镀靶偏离所需的组成的忧虑。
又,作为氧化物粉末,至少准备Nb2O5粉末、及视需要选自由SiO2粉末、TiO2粉末、B2O3粉末、CoO粉末、Co3O4粉末、Cr2O3粉末、Ta2O5粉末、ZnO粉末及MnO粉末组成的群中的至少一种粉末。氧化物粉末优选设为粒径为1μm~30μm的范围。由此,在与上述金属粉末混合并进行加压烧结时,可使氧化物粒子更均匀地分散于金属相中。在氧化物粉末的粒径大于30μm的情形时,有在加压烧结后产生粗大的氧化物粒子的情况,另一方面,在小于1μm的情形时,有产生氧化物粉末彼此的凝聚的情况。
继而,以成为所需的组成的方式称量上述金属粉末及氧化物粉末,使用球磨机等公知方法进行混合并且进行粉碎。此时,较理想为使非活性气体充满用于混合、粉碎的容器的内部而尽可能地抑制原料粉末的氧化。由此,可获得特定的金属粉末与氧化物粉末均匀地混合而成的混合粉末。
其后,将以此方式获得的混合粉末在真空环境或非活性气体环境下进行加压并使其烧结,成型为圆盘状等特定的形状。此处,可使用热压烧结法、热均压烧结法、电浆放电烧结法等各种加压烧结方法。其中,热均压烧结法就提高烧结体的密度的观点而言有效。
烧结时的保持温度优选设为700~1500℃的温度范围,尤其优选设为800℃~1400℃。而且,保持为该范围的温度的时间适宜设为1小时以上。
又,烧结时的加压力优选设为10MPa~40MPa,更优选设为25MPa~35MPa。
由此,可使氧化物粒子更均匀地分散于金属相中。
针对通过上述加压烧结所获得的烧结体,使用车床等实施制成所需形状的切削等机械加工,由此可制造溅镀靶。
(积层膜)
积层膜至少具有基底层、形成于基底层上的中间层、及形成于中间层上的磁性层。
更详细而言,基底层含有Ru,一般而言是由Ru构成、或以Ru作为主成分的层。
中间层含有Co与选自由Cr及Ru组成的群中之一种以上的金属作为金属成分,上述选自由Cr及Ru组成的群中之一种以上的金属的含量相对于Co的含量的摩尔比为1/2以上,且含有Nb2O5作为金属氧化物成分。
该中间层可通过使用上述溅镀靶的溅镀而形成。
因此,中间层可与上述溅镀靶同样地设为Nb2O5的含量为5mol%~15mol%,或者,在含有其他金属氧化物的情形时,Nb2O5的含量亦可为2mol%~5mol%。中间层可设为进一步含有Nb2O5以外的金属氧化物且包含Nb2O5在内的金属氧化物的合计含量为30vol%以上,此处,Nb2O5以外的金属氧化物可设为选自由TiO2、SiO2、B2O3、CoO、Co3O4、Cr2O3、Ta2O5、ZnO及MnO组成的群中的至少一种。
中间层的Co含量可设为15mol%~60mol%,Cr及Ru的合计含量可设为30mol%~60mol%。此外,中间层可设为进一步以5mol%~30mol%含有Pt作为金属成分。
磁性层含有Co及Pt作为金属成分,作为金属氧化物成分,可选自Nb2O5、TiO2、SiO2、B2O3、CoO、Co3O4、Cr2O3、Ta2O5、ZnO及MnO等金属氧化物。优选在该金属氧化物中含有Nb2O5。通过使磁性层含有Nb2O5,可提高磁性粒子的磁分离性。
磁性层的Nb2O5的含量进一步优选设为20mol%以下。若使Nb2O5多于20mol%,则有破坏磁性粒的结晶性的忧虑。另一方面,为了有效地提高磁分离性,磁性层的Nb2O5的含量适宜设为2mol%以上。
磁性层可设为视需要进一步含有Cr、Ru、Pt、Fe、Cu、W、Mn、Zr、B及/或Mo作为金属成分,且进一步含有TiO2、SiO2、B2O3、Cr2O3及/或CoO作为金属氧化物成分。
(积层膜的制造方法)
积层膜的各层可通过使用具有与这些各层对应的组成及组织的溅镀靶,利用磁控溅镀装置等进行成膜而形成。
此处,积层膜的中间层通过利用使用上述溅镀靶的溅镀在基底层上进行成膜而形成。
又,积层膜的磁性层优选通过使用具有与上述磁性层的组成对应的组成的含有金属成分Co及Pt的溅镀靶的溅镀在中间层上进行成膜而形成。
(磁记录媒体)
磁记录媒体具备如上所述的具有基底层、形成于基底层上的中间层、及形成于中间层上的磁性层的积层膜。磁记录媒体通常通过在铝或玻璃等基板上依序形成软磁性层、基底层、中间层、磁性层及保护层等而制造。
实施例
其次,尝试制作本发明的溅镀靶,确认到由使用其制膜的中间层所产生的效果,因此以下进行说明。但是,此处的说明仅以例示为目的,并非意图限定于此。
使用各种溅镀靶,制造图1所示的层构成的积层膜。
此处,图1中以“Mag”表示的磁性层设为组成不同的(Co-25Pt)-5TiO2-3.5SiO2-1.5Nb2O5、(Co-25Pt)-7TiO2-5SiO2、(Co-25Pt)-4.5TiO2-3SiO2的三种,关于这些各磁性层,制造使其下方侧的以“无Mag”表示的中间层如表1所示般变化的多个积层膜,分别测定该积层膜中的磁性层的饱和磁化Ms、磁各向异性Ku、磁化曲线的保磁力的斜率α。
再者,此处,饱和磁化Ms、磁化曲线的斜率α通过玉川制作所制造的试样振动型磁力计(VSM)进行测定,通过玉川制作所制造的转矩磁力计(TRQ)测定磁各向异性Ku。又,氧化物的体积率是根据原料粉的密度、重量估计靶整体的体积与氧化物的体积,由这些的比算出。
表1中,“效果”的项中的“×”意指不具有α的降低效果,“○”意指具有α的降低效果,“◎”意指具有显著的α的降低效果。
由表1所示的结果可知,在含有Nb2O5的发明例1~14中,维持相对较高的饱和磁化Ms及磁各向异性Ku并且有效地降低磁化曲线的斜率α。可知尤其是在将金属氧化物成分设为仅Nb2O5的情形时,若Nb2O5的含量设为5mol%以上,则磁化曲线的斜率α显著降低,又,在设为除含有Nb2O5以外亦含有TiO2等的情形时,若Nb2O5的含量为2mol%以上,则磁化曲线的斜率α大幅地降低。
另一方面,未设置中间层的比较例1的饱和磁化Ms及磁各向异性Ku成为较低值。由比较例2~4的结果可知,在不含Nb2O5的情形时,若增大金属氧化物的含量,则有磁化曲线的斜率α略微降低的倾向,例如在比较例4的TiO2中导致饱和磁化Ms的降低。又,在比较例5的SiO2中,虽然Ms增加,但α未降低,磁性粒子的分离变得不充分。
由以上可知,根据本发明,可不大幅地降低磁记录媒体的磁性层的磁各向异性而提高磁性粒子间的磁分离性。
Claims (8)
1.一种溅镀靶,其含有Co与包含Cr及Ru中的至少Ru的金属作为金属成分,该包含Cr及Ru中的至少Ru的金属的含量相对于Co的含量的摩尔比为1/2以上,且仅含有Nb2O5作为金属氧化物成分,Nb2O5的含量为5mol%~15mol%。
2.根据权利要求1所述的溅镀靶,其以15mol%~60mol%含有Co。
3.根据权利要求1或2所述的溅镀靶,其含有Cr及Ru中的至少Ru,且将Cr及Ru的合计含量设为30mol%~60mol%。
4.根据权利要求1或2所述的溅镀靶,其进一步以5mol%~30mol%含有Pt作为金属成分。
5.一种积层膜的制造方法,其包括:通过使用根据权利要求1至4中任一项所述的溅镀靶的溅镀,在含有Ru的基底层上形成中间层。
6.根据权利要求5所述的积层膜的制造方法,其进一步包括:通过使用含有Co及Pt作为金属成分的溅镀靶的溅镀,在该中间层上形成磁性层。
7.一种积层膜,其包含:
基底层:含有Ru;
中间层:形成于该基底层上,含有Co与选自由Cr及Ru组成的群中之一种以上的金属作为金属成分,该选自由Cr及Ru组成的群中之一种以上的金属的含量相对于Co的含量的摩尔比为1/2以上;以及
磁性层:形成于该中间层上,含有Co及Pt作为金属成分;
该中间层仅含有Nb2O5作为金属氧化物成分,Nb2O5的含量为5mol%~15mol%。
8.一种磁记录媒体,其具备根据权利要求7所述的积层膜。
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JP (1) | JP7122260B2 (zh) |
CN (2) | CN113817993B (zh) |
MY (1) | MY199943A (zh) |
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- 2018-08-16 JP JP2018565426A patent/JP7122260B2/ja active Active
- 2018-08-16 WO PCT/JP2018/030436 patent/WO2019058820A1/ja active Application Filing
- 2018-08-16 US US16/344,372 patent/US20200051589A1/en not_active Abandoned
- 2018-08-16 CN CN202111090388.5A patent/CN113817993B/zh active Active
- 2018-08-16 CN CN201880003684.7A patent/CN109819662B/zh active Active
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CN113817993B (zh) | 2024-06-18 |
TWI671418B (zh) | 2019-09-11 |
CN109819662A (zh) | 2019-05-28 |
US20200051589A1 (en) | 2020-02-13 |
WO2019058820A1 (ja) | 2019-03-28 |
TW201915205A (zh) | 2019-04-16 |
SG11201903752XA (en) | 2019-05-30 |
JP7122260B2 (ja) | 2022-08-19 |
CN113817993A (zh) | 2021-12-21 |
US20220005505A1 (en) | 2022-01-06 |
JPWO2019058820A1 (ja) | 2020-09-10 |
MY199943A (en) | 2023-11-30 |
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