SG11201903752XA - Sputtering target, method for producing laminated film, laminated film and magnetic recording medium - Google Patents
Sputtering target, method for producing laminated film, laminated film and magnetic recording mediumInfo
- Publication number
- SG11201903752XA SG11201903752XA SG11201903752XA SG11201903752XA SG11201903752XA SG 11201903752X A SG11201903752X A SG 11201903752XA SG 11201903752X A SG11201903752X A SG 11201903752XA SG 11201903752X A SG11201903752X A SG 11201903752XA SG 11201903752X A SG11201903752X A SG 11201903752XA
- Authority
- SG
- Singapore
- Prior art keywords
- laminated film
- sputtering target
- recording medium
- magnetic recording
- producing
- Prior art date
Links
- 238000005477 sputtering target Methods 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 229910052751 metal Inorganic materials 0.000 abstract 3
- 239000002184 metal Substances 0.000 abstract 3
- 150000002739 metals Chemical class 0.000 abstract 2
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Chemical compound O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 abstract 2
- 229910044991 metal oxide Inorganic materials 0.000 abstract 1
- 150000004706 metal oxides Chemical class 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
- H01F41/183—Sputtering targets therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
- G11B5/739—Magnetic recording media substrates
- G11B5/73911—Inorganic substrates
- G11B5/73917—Metallic substrates, i.e. elemental metal or metal alloy substrates
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/10—Sintering only
- B22F3/105—Sintering only by using electric current other than for infrared radiant energy, laser radiation or plasma ; by ultrasonic bonding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/12—Both compacting and sintering
- B22F3/14—Both compacting and sintering simultaneously
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/12—Both compacting and sintering
- B22F3/14—Both compacting and sintering simultaneously
- B22F3/15—Hot isostatic pressing
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/0433—Nickel- or cobalt-based alloys
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/05—Mixtures of metal powder with non-metallic powder
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/10—Alloys containing non-metals
- C22C1/1084—Alloys containing non-metals by mechanical alloying (blending, milling)
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
- C22C32/001—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with only oxides
- C22C32/0015—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with only oxides with only single oxides as main non-metallic constituents
- C22C32/0026—Matrix based on Ni, Co, Cr or alloys thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0688—Cermets, e.g. mixtures of metal and one or more of carbides, nitrides, oxides or borides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
- C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
- G11B5/7368—Non-polymeric layer under the lowermost magnetic recording layer
- G11B5/7369—Two or more non-magnetic underlayers, e.g. seed layers or barrier layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/8404—Processes or apparatus specially adapted for manufacturing record carriers manufacturing base layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/10—Sintering only
- B22F3/105—Sintering only by using electric current other than for infrared radiant energy, laser radiation or plasma ; by ultrasonic bonding
- B22F2003/1051—Sintering only by using electric current other than for infrared radiant energy, laser radiation or plasma ; by ultrasonic bonding by electric discharge
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/851—Coating a support with a magnetic layer by sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
Abstract
SPUTTERING TARGET, METHOD FOR PRODUCING LAMINATED FILM, LAMINATED FILM AND MAGNETIC RECORDING MEDIUM A sputtering target according to the present invention contains Co and one or more metals selected from the group consisting of Cr and Ru, as metal components, wherein a molar ratio of the content of the one or more metals to the content of Co is 1/2 or more, and wherein the sputtering target contains Nb2O5 as a metal oxide component.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017180830 | 2017-09-21 | ||
PCT/JP2018/030436 WO2019058820A1 (en) | 2017-09-21 | 2018-08-16 | Sputtering target, manufacturing method for layered film, layered film, and magnetic recording medium |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201903752XA true SG11201903752XA (en) | 2019-05-30 |
Family
ID=65811356
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201903752XA SG11201903752XA (en) | 2017-09-21 | 2018-08-16 | Sputtering target, method for producing laminated film, laminated film and magnetic recording medium |
Country Status (7)
Country | Link |
---|---|
US (2) | US20200051589A1 (en) |
JP (1) | JP7122260B2 (en) |
CN (2) | CN109819662B (en) |
MY (1) | MY199943A (en) |
SG (1) | SG11201903752XA (en) |
TW (1) | TWI671418B (en) |
WO (1) | WO2019058820A1 (en) |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7842409B2 (en) * | 2001-11-30 | 2010-11-30 | Seagate Technology Llc | Anti-ferromagnetically coupled perpendicular magnetic recording media with oxide |
JP2004206805A (en) | 2002-12-25 | 2004-07-22 | Fuji Electric Device Technology Co Ltd | Magnetic recording medium and its manufacturing method |
WO2006098506A1 (en) * | 2005-03-17 | 2006-09-21 | Ricoh Company, Ltd. | Optical recording medium |
US7494617B2 (en) | 2005-04-18 | 2009-02-24 | Heraeus Inc. | Enhanced formulation of cobalt alloy matrix compositions |
CN102066025A (en) * | 2008-08-28 | 2011-05-18 | Jx日矿日石金属株式会社 | Process for producing powder mixture comprising noble-metal powder and oxide powder and powder mixture comprising noble-metal powder and oxide powder |
US8488276B1 (en) * | 2008-09-30 | 2013-07-16 | WD Media, LLC | Perpendicular magnetic recording medium with grain isolation magnetic anistropy layer |
TWI424074B (en) * | 2009-03-27 | 2014-01-21 | Jx Nippon Mining & Metals Corp | Ti-Nb-based sintered body sputtering target, Ti-Nb-based oxide thin film, and method for producing the same |
MY148731A (en) | 2009-08-06 | 2013-05-31 | Jx Nippon Mining & Metals Corp | Inorganic-particle-dispersed sputtering target |
MY149640A (en) * | 2009-12-11 | 2013-09-13 | Jx Nippon Mining & Metals Corp | Sputtering target comprising oxide phase dispersed in co or co alloy phase, magnetic thin film made of co or co alloy phase and oxide phase, and magnetic recording medium using the said thin film |
JP5536540B2 (en) * | 2010-05-26 | 2014-07-02 | 昭和電工株式会社 | Magnetic recording medium and magnetic recording / reproducing apparatus |
JP5660710B2 (en) | 2010-08-03 | 2015-01-28 | 昭和電工株式会社 | Target manufacturing method, magnetic recording medium manufacturing method |
TW201219587A (en) * | 2010-11-05 | 2012-05-16 | Solar Applied Mat Tech Corp | Targets and recording materials in magnetic recording medium formed from the target |
CN102465265A (en) * | 2010-11-10 | 2012-05-23 | 光洋应用材料科技股份有限公司 | Target material and its application in recording layer material of magnetic recording media |
JP4970633B1 (en) * | 2010-12-15 | 2012-07-11 | Jx日鉱日石金属株式会社 | Ferromagnetic material sputtering target and manufacturing method thereof |
JP5394575B2 (en) * | 2010-12-17 | 2014-01-22 | Jx日鉱日石金属株式会社 | Ferromagnetic sputtering target |
MY165736A (en) * | 2012-09-18 | 2018-04-20 | Jx Nippon Mining & Metals Corp | Sputtering target |
JP5768029B2 (en) * | 2012-10-05 | 2015-08-26 | 田中貴金属工業株式会社 | Magnetron sputtering target and method for manufacturing the same |
SG11201503673XA (en) | 2012-12-18 | 2015-06-29 | Jx Nippon Mining & Metals Corp | Sintered compact sputtering target |
CN105934532B (en) | 2013-10-29 | 2019-09-20 | 田中贵金属工业株式会社 | Magnetron sputtering target |
-
2018
- 2018-08-06 TW TW107127248A patent/TWI671418B/en active
- 2018-08-16 US US16/344,372 patent/US20200051589A1/en not_active Abandoned
- 2018-08-16 WO PCT/JP2018/030436 patent/WO2019058820A1/en active Application Filing
- 2018-08-16 MY MYPI2019002527A patent/MY199943A/en unknown
- 2018-08-16 JP JP2018565426A patent/JP7122260B2/en active Active
- 2018-08-16 SG SG11201903752XA patent/SG11201903752XA/en unknown
- 2018-08-16 CN CN201880003684.7A patent/CN109819662B/en active Active
- 2018-08-16 CN CN202111090388.5A patent/CN113817993A/en active Pending
-
2021
- 2021-09-15 US US17/475,481 patent/US20220005505A1/en active Pending
Also Published As
Publication number | Publication date |
---|---|
MY199943A (en) | 2023-11-30 |
JPWO2019058820A1 (en) | 2020-09-10 |
CN109819662B (en) | 2021-11-23 |
JP7122260B2 (en) | 2022-08-19 |
CN109819662A (en) | 2019-05-28 |
WO2019058820A1 (en) | 2019-03-28 |
TW201915205A (en) | 2019-04-16 |
CN113817993A (en) | 2021-12-21 |
US20200051589A1 (en) | 2020-02-13 |
TWI671418B (en) | 2019-09-11 |
US20220005505A1 (en) | 2022-01-06 |
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