CN109797376B - 包括上喷头和下喷头在内的沉积装置 - Google Patents
包括上喷头和下喷头在内的沉积装置 Download PDFInfo
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Abstract
一种沉积装置,包括:上喷头和下喷头,位于处理腔室内,所述上喷头和所述下喷头面向彼此;支撑结构,位于所述上喷头和所述下喷头之间,用于支撑晶圆,所述支撑结构连接到所述下喷头;以及等离子体处理区域,位于由所述支撑结构支撑的晶圆和所述下喷头之间,其中,所述下喷头包括下孔,用于向所述晶圆的方向喷射下部气体,所述上喷头包括上孔,用于向所述晶圆的方向喷射上部气体,以及所述支撑结构包括通孔部,用于将通过所述下孔喷射的下部气体的一部分排放到所述支撑结构和所述上喷头之间的空间中。
Description
相关申请的交叉引用
本公开要求于2017年11月16日在韩国知识产权局提交的题为“包括上喷头和下喷头在内的沉积装置”的韩国专利申请No.10-2017-0153001的优先权,其通过引用整体并入本文中。
技术领域
本公开涉及一种沉积装置,并且更具体地,涉及一种包括上喷头和下喷头在内的沉积装置。
背景技术
通常,集成电路(IC)形成在半导体晶圆的前表面上。可以通过在半导体晶圆的前表面上重复半导体制造工艺(例如,沉积工艺、光刻工艺和蚀刻工艺)来形成这种IC。
发明内容
根据本公开的一方面,提供了一种沉积装置。沉积装置包括:上喷头和下喷头,位于处理腔室内且面向彼此;支撑结构,设置在上喷头和下喷头之间,连接到下喷头并且支撑晶圆;以及等离子体处理区域,设置在由支撑结构支撑的晶圆和下喷头之间。下喷头包括用于向晶圆的方向喷射下部气体的下孔,上喷头包括用于向晶圆的方向喷射上部气体的上孔,并且支撑结构包括用于将通过下孔喷射的下部气体的一部分排放到支撑结构和上喷头之间的空间内的通孔部。
根据本公开的另一方面,提供了一种沉积装置。沉积装置包括:下喷头;上喷头,设置在下喷头上方;支撑结构,设置在上喷头和下喷头之间,连接到下喷头并且支撑晶圆;以及等离子体处理区域,设置在由支撑结构支撑的晶圆和下喷头之间。下喷头包括用于向晶圆的方向喷射等离子体处理源气体的下孔,上喷头包括用于向晶圆的方向喷射净化气体的上孔,并且支撑结构包括用于将通过下孔喷射的等离子体处理源气体的一部分排放到支撑结构和上喷头之间的空间内的通孔部。
根据本公开的又一方面,提供了一种沉积装置。沉积装置包括:下喷头,设置在处理腔室内;上喷头,设置在处理腔室内并面向下喷头;支撑结构,设置在上喷头和下喷头之间,连接到下喷头并且支撑晶圆;金属环,设置在处理腔室内壁上,围绕支撑结构的至少一部分;以及,可变电容,设置在处理腔室外部,并且电连接到金属环。
附图说明
通过参考附图详细描述示例实施例,特征对于本领域技术人员将变得显而易见,在附图中:
图1示出了根据示例实施例的沉积装置的概念性横截面图;
图2示出了根据示例实施例的沉积装置的一部分的概念性透视图;
图3示出了根据示例实施例的沉积装置的一部分的平面图;
图4示出了根据示例实施例的沉积装置的一部分的修改示例的平面图;
图5A示出了根据示例实施例的沉积装置的一部分的横截面图;
图5B示出了根据示例实施例的沉积装置的一部分的修改示例的横截面图;
图5C示出了根据示例实施例的沉积装置的一部分的修改示例的横截面图;
图6示出了根据示例实施例的沉积装置的修改示例的概念性横截面图;
图7示出了根据示例实施例的沉积装置的修改示例的概念性横截面图;
图8示出了根据示例实施例的沉积装置的修改示例的概念性横截面图;以及
图9示出了根据示例实施例的沉积装置的修改示例的概念性横截面图。
具体实施方式
下文中,将参考附图来描述根据示例实施例的沉积装置。
将参考图1至图3和图5A描述根据示例实施例的沉积装置。图1是示出了根据示例实施例的沉积装置1的示例的概念性横截面图。图2是概念性地示出了根据示例实施例的沉积装置1的下喷头30和支撑结构40的透视图。图3是概念性地示出了根据示例实施例的沉积装置1中的支撑晶圆W的支撑结构40的平面图。图5A是沿图3的线I-I’截得的横截面图。
参考图1、图2、图3和图5A,根据示例实施例,沉积装置1可以包括处理腔室5、设置在处理腔室5内面向彼此的上喷头10和下喷头30、以及设置在上喷头10和下喷头30之间用以支撑晶圆W的支撑结构40。例如,如图1所示,仅晶圆W的边缘可以由支撑结构40支撑,晶圆W的前表面WF和后表面WB两者是暴露的,并且分别面向上喷头10和下喷头30。
根据示例实施例,沉积装置1还可以包括上供气部60和上气管62,从上供气部60供应的上部气体63可以通过上气管62移动到处理腔室5中。根据示例实施例,沉积装置1还可以包括下供气部70和下气管72,从下供气部70供应的下部气体73可以通过下气管72移动到处理腔室5中。根据示例实施例,沉积装置1还可以包括在处理腔室5内产生等离子体的射频(RF)电源部90。
详细地,上喷头10可以设置在下喷头30上方。上喷头10可以具有上头表面10s,下喷头30可以具有面向上头表面10s的下头表面30s。在示例中,上支撑部8可以将上喷头10固定到处理腔室5。
上喷头10可以在其中具有上流动路径12。上流动路径12可以延伸到上支撑部8中以连接到上气管62。例如,如图1所示,上流动路径12可以包括:第一通道,例如沿y方向竖直延伸通过上支撑部8;以及,第二通道,例如沿x方向水平延伸通过上喷头10,例如,上流动路径12的第一通道和第二通道可以彼此连接并且彼此流体连通。
上喷头10可以包括上孔14,用于向晶圆W的方向喷射(例如,排放)上部气体63。上孔14可以从上头表面10s起始在上喷头10中内部延伸,以连接到上流动路径12。例如,如图1所示,上喷头10的上头表面10s可以是xz平面中的基本平坦的表面,上孔14沿y方向从上流动路径12的水平部分延伸到上头表面10s,例如,上孔14可以延伸通过上头表面10s以限定与上流动路径12流体连通的流动路径。因此,从上供气部60供应的上部气体63可以依次通过上气管62、上流动路径12和上孔14而喷射到由支撑结构40支撑的晶圆W的前表面WF上。晶圆W的前表面WF可以面向上喷头10,并且后表面WB可以面向下喷头30。
下喷头30可以在其中具有下流动路径32。下流动路径32可以延伸到下杆28中并且延伸到设置在下杆28下方的下部结构55中,以连接到下气管72。例如,如图1所示,下流动路径32可以包括:第一通道,例如沿y方向竖直延伸通过下杆28并延伸进入下部结构55中;以及,第二通道,例如沿x方向水平延伸通过下喷头30,例如,下流动路径32的第一通道和第二通道可以彼此连接并且彼此流体连通。下杆28可以使下喷头30和支撑结构40沿竖直方向(例如,沿y方向)移动。下杆28也可以通过设置在下杆28下方的下部结构55而沿竖直方向移动。
下喷头30可以包括下孔34,用于向晶圆W的方向喷射下部气体73。下孔34可以从下头表面30s起始在下喷头30中内部延伸,以连接到下流动路径32。例如,如图1所示,下喷头30的下头表面30s可以是xz平面中的基本平坦的表面,下孔34沿y方向从下流动路径32的水平部分延伸到下头表面30s,例如,下孔34可以延伸通过下头表面30s以限定与下流动路径32流体连通的流动路径。因此,从下供气部70供应的下部气体73可以依次通过下喷头30的下流动路径32和下孔34而喷射到晶圆W的后表面WB上。
当向RF电源部90供应RF电力时,可以通过晶圆W的后表面WB和下喷头30之间的下部气体73(图1中的后表面WB和下喷头30之间的虚线框)产生等离子体PL。详细地,通过下部气体73产生的等离子体可以用于例如经由化学气相沉积(CVD)在晶圆W的后表面WB上沉积后加强膜100b(例如,氧化硅膜或氮化硅膜)(图5A)。在示例中,下部气体73可以是等离子体处理源气体,可以用于通过等离子体处理来形成氧化硅膜或氮化硅膜。前图案100可以形成在晶圆W的前表面WF上,以形成半导体集成电路(IC),如图5A所示。形成在晶圆W的后表面WB上的后加强膜100b可以显著减小晶圆W的翘曲现象。
可以将能够通过下部气体73产生等离子体的区域定义为“等离子体处理区域PL”。等离子体处理区域PL可以形成在由支撑结构40支撑的晶圆W和下喷头30之间。等离子体处理区域PL也可以形成在晶圆W和下喷头30之间,并且可以延伸到下喷头30和支撑结构40之间的空间中。
上部气体63可以由上供气部60供应,并且通过上喷头10的上孔14喷射到晶圆W的前表面WF上的上净化区域PU。上部气体63可以是净化气体,即使当向RF电源部90供应RF电力时也不会通过净化气体产生等离子体。例如,上部气体63可以是诸如氮气之类的净化气体。上净化区域PU可以防止在等离子体处理区域PL中产生的等离子体沉积到晶圆W的前表面WF上。因此,上净化区域PU可以防止晶圆W的前表面WF受损坏或污染。
在示例实施例中,喷射到上喷头10和下喷头30之间的空间的上部气体63和下部气体73可以通过设置在处理腔室5的下部区域中的排放部82排放。排放部82可以连接到真空泵80,并且上部气体63和下部气体73可以通过由真空泵80产生的真空吸入力排放。
在示例中,支撑结构40可以耦接到下喷头30(如图2所示),并且可以与上喷头10间隔开(如图1所示)。支撑结构40可以包括围绕晶圆W的环状体44、从环状体44向下延伸以连接到下喷头30的多个环支撑杆42、以及从环状体44的下部区域起始沿环状体44的向心方向延伸以支撑晶圆W的晶圆支撑部46。支撑结构40还可以包括通孔部40a,用于将通过下孔34喷射的下部气体73的一部分排放到支撑结构40和上喷头10之间的空间中,例如,通孔部40a可以沿着环状体44的周长方向彼此间隔开。
详细地,如图1和图5A所示,通孔部40a可以穿过支撑结构40的环状体44。通孔部40a可以从环状体44的上表面40U延伸到环状体44的下表面40L(图5A)。沿着从环状体44的下表面40L向环状体44的上表面40U的方向,通孔部40a可以离环状体44的外表面比离环状体44的内表面更近。
每个通孔部40a中穿过环状体44的上表面40U的部分可以比该通孔部40a中穿过环状体44的下表面40L的部分更靠近环状体44的外表面40S1。换句话说,如图1和5A所示,在通孔部40a中,随着离环状体44的上表面40U的距离减小,环状体44的外表面40S1与通孔部40a之间(例如,沿着相对于下杆28的径向)的距离会减小,例如,通孔部40a可以倾斜以在通孔部40a和晶圆W的后表面WB之间形成钝角。
下部气体的一部分73可以通过通孔部40a排放,其余下部气体73可以通过环状体44和下喷头30之间的空间排放。由于通孔部40a可以沿从环状体44的内表面40S2向环状体44的外表面40S1的方向倾斜,因此通过通孔部40a排放的下部气体73可以不移动到晶圆W的前表面WF上,并且可以通过支撑结构40的环状体44的上表面40U和上喷头10之间的空间向排放部82移动。通孔部40a可以用于与上净化区域PU一起保护晶圆W的前表面WF免受在等离子体处理区域PL中产生的等离子体的影响。
因此,根据示例实施例,沉积装置1可以执行用于在保护晶圆W的前表面WF免受影响的同时在由支撑结构40支撑的晶圆W的后表面上WB形成后加强膜100b的沉积处理。后加强膜100b(图5A)可以显著减少晶圆W的翘曲。
例如,如图3所示,在顶视图中,每个通孔部40a可以是圆形的。然而,示例实施例不限于此。
将参考图4描述通孔部的修改示例。图4是示出了用于图示通孔部的修改示例的支撑晶圆W的支撑结构40的平面图。
参考图4,在顶视图中,每个通孔部40b可以具有细长条状或椭圆形形状。例如,通孔部40b可以具有条状形状,其沿着环状体44的周长方向的长度大于其沿着环状体44的径向(即,朝向中心)的宽度。通孔部40b的横截面结构可以与图1至图3中的通孔部40a的横截面结构(例如,倾斜结构)相同。
再次参考图1、图2、图3和图5A,每个通孔部40a可以从环状体44的上表面40U的中心部分延伸到环状体44的下表面40L。例如,如图3所示,在顶视图中,每个通孔部40a可以居中于环状体44的上表面40U上,例如,在顶视图中,相对于外表面40S1和内表面40S2等距离地布置(图5A)。然而,示例实施例不限于此。
将参考图5B描述通孔部的修改示例。图5B是概念性地示出了支撑晶圆W的支撑结构40的修改示例的横截面图。
参考图5B,每个通孔部40c中的穿过环状体44的上表面40U的部分可以从上表面40U的中心部分朝向环状体44的外表面40S1偏移,如顶视图中所示。因此,每个通孔部40c中穿过环状体44的上表面40U的部分可以离环状体44的外表面40S1比离环状体44的内表面40S2更近。换句话说,如图5B所示,在顶视图中,每个通孔部40c可被置于离外表面40S1比离内表面40S2更近的位置,同时具有参考图1至图3描述的相同横截面结构。
再次参考图1、图2、图3和图5A,每个通孔部40a可以穿过环状体44,并且可以例如与环状体44和晶圆支撑部46之间的虚构界面46a水平地间隔开,例如,环状体44和晶圆支撑部46可以彼此是一体的,以限定单个且无缝的结构。然而,示例实施例不限于此。
将参考图5C描述通孔部的修改示例。图5C是概念性地示出了支撑晶圆W的支撑结构40的修改示例的横截面图。
参考图5C,通孔部40d可以从环状体44的上表面40U起始在环状体44的内部延伸,并且可以穿过晶圆支撑部46的至少一部分。例如,与参考图1至图3描述的通孔部40a相比,通孔部40d的角度或位置可以不同。
将参考图6描述根据示例实施例的作为修改示例的沉积装置1a。图6是示出了根据示例实施例的作为修改示例的沉积装置1a的概念性横截面图。
参考图6,沉积装置1a可以包括处理腔室5、上喷头10、下喷头30、上供气部60、上气管62、下供气部70、下气管72和RF电源部分90,如上所述。
沉积装置1a还可以包括设置在上喷头10和下喷头30之间的支撑结构40'。支撑结构40’可以耦接到下喷头30,并且可以与上喷头10间隔开。支撑结构40’可以包括围绕晶圆W的环状体44、从环状体44向下延伸以连接到下喷头30的多个环支撑杆42、以及从环状体44的下部区域起始沿环状体44的向心方向延伸以支撑晶圆W的晶圆支撑部46。
根据示例实施例,沉积装置1a还可以包括与可以改变电容值的可变电容120电连接的金属环110。在示例中,可变电容120可以设置在处理腔室5的外部。
在示例中,金属环110可以通过电介质105(例如,石英)与处理腔室5的内部空间隔离。电介质105可以设置在处理腔室5的壁上(例如,内壁上)。电介质105可以将处理腔室5的内部(例如,清空(empty))空间与金属环110隔离,同时覆盖金属环110。电介质105可以与支撑结构40’间隔开。
金属环110可以与支撑结构40’间隔开,同时围绕支撑结构40'的至少一部分。在示例中,金属环110可以与支撑结构40’间隔开,同时围绕支撑结构40’的环状体44。
电连接到可变电容120的金属环110可以防止在支撑结构40’的环状体44的外部形成在等离子体处理区域PL中产生的等离子体。因此,金属环110可以防止沿着环状体44的外表面在晶圆W的前表面WF上形成在等离子体处理区域PL中产生的等离子体。
将参考图7描述金属环的修改示例。图7是示出了根据示例实施例的用于图示金属环的修改示例的沉积装置1a的修改示例的横截面图。
参考图7,如上面参考图6所描述的,电连接到可变电容120的金属环110a可以沿着处理腔室5的侧壁设置。金属环110a可以围绕(例如,至少部分地重叠)等离子体处理区域PL,同时围绕(例如,至少部分地重叠)支撑结构40’的环状体44。
再次参考图6或图7,支撑结构40’的环状体44可以是不具有通孔部的块状(bulk)形状。然而,示例实施例不限于此。
例如,可以修改环状体44,使得环状体44可以包括与上面参考图1至图5C描述的那些通孔部相同的通孔部。将参考图8描述修改后的沉积装置示例1b,如上所述,该沉积装置1b包括具有环状体44的支撑结构40。
参考图8,沉积装置1b可以包括:支撑结构40,其包括与上面参考图1至图5C描述的那些通孔部相同的通孔部;以及,金属环110,其也如以上参考图6或图7所述的那样电连接到可变电容120。由于上面已经参考图1至图5C描述了通孔部(即,通孔部40a),因此这里将省略其详细描述。
再次参考图1,下喷头30可以具有设置在其中的下加热器36。下加热器36可以调整等离子体处理区域PL的处理温度。因此,根据示例实施例,沉积装置1可以使用下加热器36来调整处理温度。然而,示例实施例不限于此。
将参考图9描述下加热器36的修改示例。图9是示出了根据示例实施例的沉积装置1的修改示例的概念性透视图。
参考图9,根据示例实施例,沉积装置1c可以使用设置在上喷头10内的上加热器16以及设置在下喷头30内的下加热器36来调整处理温度。此外,沉积装置1c还可以包括支撑结构40或40’和/或与可变电容120电连接的金属环110或110a。
支撑结构40或40’和金属环110或110a可以防止在晶圆W的前表面WF上沉积不期望的膜,同时在晶圆W的后表面WB上形成后加强膜100b以显著减少晶圆W的翘曲现象。因此,支撑结构40或40’和与可变电容120电连接的金属环110或110a可以用于保护晶圆W的前表面WF免受用于在晶圆W的后表面WB上形成后加强膜100b的等离子体的影响。
通过总结和回顾,随着用于形成集成IC的半导体制造工艺的发展,可以在半导体晶圆的前表面上形成均匀厚度的前图案。然而,由这种前图案产生的应力可以引起半导体晶圆会翘曲的卷边现象。
相反,本公开的一个方面提供了一种沉积装置,其可以在半导体晶圆的后表面上执行沉积工艺。本公开的一个方面还提供了一种包括上喷头和下喷头在内的沉积装置。
也就是说,根据示例实施例,可以提供包括上喷头和下喷头在内的沉积装置。沉积装置可以保护晶圆的前表面免受等离子体处理的影响,同时通过等离子体处理在晶圆的后表面上形成后加强膜。因此,沉积装置可以在防止晶圆的前表面受污染或损坏的同时在晶圆的后表面上形成后加强膜,用于显著减少卷边现象(例如,晶圆的翘曲)。
本文已经公开了示例实施例,并且尽管采用了特定术语,但是它们仅用于且将被解释为一般的描述性意义,而不是为了限制的目的。在一些情况下,本领域技术人员应认识到,除非另有明确说明,否则结合特定实施例描述的特征、特性和/或元件可以单独使用或与结合其他实施例描述的特征、特性和/或元件相结合。因此,本领域技术人员将理解,在不脱离如所附权利要求中阐述的本发明的精神和范围的前提下,可以进行形式和细节上的各种改变。
Claims (20)
1.一种沉积装置,包括:
上喷头和下喷头,位于处理腔室内,所述上喷头的下表面和所述下喷头的最上表面面向彼此;
支撑结构,位于所述上喷头和所述下喷头之间,用于支撑晶圆,所述支撑结构包括围绕晶圆的环状体,并且所述环状体的下表面连接到所述下喷头;以及
等离子体处理区域,位于由所述支撑结构支撑的晶圆和所述下喷头之间,所述等离子体处理区域与所述环状体的下表面直接流体连通,
其中,所述下喷头包括下孔,用于向所述晶圆的方向喷射下部气体,
其中,所述上喷头包括上孔,用于向所述晶圆的方向喷射上部气体,
其中,所述支撑结构还包括穿过所述环状体的通孔部,所述通孔部中的每一个的整体以靠近所述晶圆的一侧相对于所述环状体的下表面的钝角从所述环状体的上表面延伸到所述环状体的下表面,所述通孔部中的每一个的底部与所述等离子体处理区域直接流体连通,并且面向所述下喷头用于将通过所述下孔喷射的下部气体的一部分排放到所述支撑结构和所述上喷头之间的空间中,
其中,所述支撑结构还包括多个环支撑杆,从所述环状体向下延伸并连接到所述下喷头,以及
其中,所述多个环支撑杆直接接触所述下喷头的最上表面。
2.根据权利要求1所述的沉积装置,其中,所述支撑结构还包括:
晶圆支撑部,从所述环状体的下部区域向所述环状体的中心延伸以支撑所述晶圆。
3.根据权利要求2所述的沉积装置,其中,所述多个环支撑杆以其整体在所述环状体的下表面和所述下喷头的最上表面之间延伸,所述多个环支撑杆定义所述环状体的下表面和所述下喷头的最上表面之间的用于所述等离子体处理区域的空间。
4.根据权利要求3所述的沉积装置,其中,所述通孔部中穿过所述环状体的上表面的部分比所述通孔部中穿过所述环状体的下表面的部分更靠近所述环状体的外表面。
5.根据权利要求3所述的沉积装置,其中,所述通孔部中穿过所述环状体的上表面的部分离所述环状体的外表面比离所述环状体的内表面更近。
6.根据权利要求1所述的沉积装置,其中,所述支撑结构还包括:
晶圆支撑部,从所述环状体的下部区域向所述环状体的中心延伸以支撑所述晶圆,所述支撑结构的所述通孔部从所述环状体的上表面起始在所述环状体的内部延伸,并且穿过所述晶圆支撑部的至少一部分。
7.根据权利要求1所述的沉积装置,还包括:
金属环,位于设置在所述处理腔室的内壁上的电介质内,所述电介质将所述金属环与所述处理腔室的空置空间隔离;以及
可变电容,电连接到所述金属环,所述可变电容位于所述处理腔室的外部。
8.根据权利要求1所述的沉积装置,其中,所述支撑结构离所述上喷头比离所述下喷头更近。
9. 根据权利要求1所述的沉积装置,还包括:
上供气部,用于供应所述上部气体,所述上部气体包括净化气体;以及
下供气部,用于供应所述下部气体,所述下部气体包括等离子体处理源气体。
10.根据权利要求1所述的沉积装置,还包括:排放部,位于所述处理腔室的下部上,所述排放部低于所述下喷头,用于排放所述上部气体和所述下部气体。
11.根据权利要求1所述的沉积装置,还包括:下加热器,位于所述下喷头内。
12.根据权利要求1所述的沉积装置,还包括:上加热器,位于所述上喷头内。
13.一种沉积装置,包括:
下喷头,具有最上表面;
上喷头,面向所述下喷头;
支撑结构,位于所述上喷头和所述下喷头之间,用于支撑晶圆,所述支撑结构包括环状体以围绕晶圆的侧壁;以及
等离子体处理区域,位于由所述支撑结构支撑的晶圆和所述下喷头之间,所述等离子体处理区域与所述环状体的下表面直接流体连通,
其中,所述下喷头包括下孔,用于向所述晶圆的方向喷射等离子体处理源气体,
其中,所述上喷头包括上孔,用于向所述晶圆的方向喷射净化气体,
其中,所述支撑结构还包括穿过所述环状体的通孔部,所述通孔部中的每一个的整体以靠近所述晶圆的一侧相对于所述环状体的下表面的钝角从所述环状体的上表面延伸到所述环状体的下表面,所述通孔部中的每一个的底部与所述等离子体处理区域直接流体连通,并且面向所述下喷头用于将通过所述下孔喷射的等离子体处理源气体的一部分排放到所述支撑结构和所述上喷头之间的空间内,
其中,所述下喷头的最上表面与所述环状体的下表面和由所述支撑结构支撑的晶圆在竖直方向上的投影重叠,
其中,所述支撑结构还包括多个环支撑杆,从所述环状体向下延伸并连接到所述下喷头,以及
其中,所述多个环支撑杆直接接触所述下喷头的最上表面。
14.根据权利要求13所述的沉积装置,其中,所述支撑结构还包括:
晶圆支撑部,从所述环状体的下部区域向所述环状体的中心延伸以支撑所述晶圆,
其中,所述通孔部中穿过所述环状体的上表面的部分比所述通孔部中穿过所述环状体的下表面的部分更靠近所述环状体的外表面。
15.根据权利要求13所述的沉积装置,其中,所述支撑结构还包括:
晶圆支撑部,从所述环状体的下部区域向所述环状体的中心延伸以支撑所述晶圆,
其中,所述支撑结构的所述通孔部从所述环状体的上表面起始在内部延伸通过所述环状体,所述通孔部穿过所述晶圆支撑部的至少一部分,以及
其中,所述通孔部中穿过所述环状体的上表面的部分比所述通孔部中穿过所述环状体的下表面的部分更靠近所述环状体的外表面。
16.根据权利要求13所述的沉积装置,还包括:
金属环,围绕所述支撑结构,所述金属环与所述支撑结构间隔开;以及
可变电容,与所述金属环电连接。
17.一种沉积装置,包括:
下喷头,具有最上表面且位于处理腔室内;
上喷头,位于所述处理腔室内,所述上喷头的下表面面向所述下喷头的最上表面;
支撑结构,位于所述上喷头和所述下喷头之间,用于支撑晶圆,所述支撑结构包括环状体以围绕晶圆的侧壁;
等离子体处理区域,位于由所述支撑结构支撑的所述晶圆和所述下喷头之间,所述等离子体处理区域与所述环状体的下表面直接流体连通;
金属环,位于所述处理腔室的内壁上,所述金属环围绕所述支撑结构的至少一部分;以及
可变电容,电连接到所述金属环,所述可变电容位于所述处理腔室的外部,
其中,所述支撑结构还包括穿过所述环状体的通孔部,所述通孔部中的每一个的整体以靠近所述晶圆的一侧相对于所述环状体的下表面的钝角从所述环状体的上表面延伸到所述环状体的下表面,所述通孔部中的每一个的底部与所述等离子体处理区域直接流体连通,
其中,所述支撑结构还包括多个环支撑杆,从所述环状体向下延伸并连接到所述下喷头,以及
其中,所述多个环支撑杆直接接触所述下喷头的最上表面。
18.根据权利要求17所述的沉积装置,其中:
所述下喷头包括下孔,用于向所述晶圆的方向喷射下部气体,
所述上喷头包括上孔,用于向所述晶圆的方向喷射上部气体,以及
所述通孔部用于将通过所述下孔喷射的下部气体的一部分排放到所述支撑结构和所述上喷头之间的空间中。
19.根据权利要求18所述的沉积装置,其中,所述支撑结构还包括:
晶圆支撑部,从所述环状体的下部区域向所述环状体的中心延伸以支撑所述晶圆,
其中,所述通孔部穿过所述环状体,所述通孔部从所述环状体的上表面起始在内部延伸通过所述环状体,并且穿过所述晶圆支撑部的至少一部分。
20.根据权利要求17所述的沉积装置,还包括:电介质,位于所述金属环和所述处理腔室的内部空间之间。
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