CN109715850A - 三氯二硅烷 - Google Patents
三氯二硅烷 Download PDFInfo
- Publication number
- CN109715850A CN109715850A CN201780057569.3A CN201780057569A CN109715850A CN 109715850 A CN109715850 A CN 109715850A CN 201780057569 A CN201780057569 A CN 201780057569A CN 109715850 A CN109715850 A CN 109715850A
- Authority
- CN
- China
- Prior art keywords
- silicon
- film
- substrate
- precursor
- steam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
- C01B33/107—Halogenated silanes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
- C23C16/45542—Plasma being used non-continuously during the ALD reactions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
- C01B33/107—Halogenated silanes
- C01B33/1071—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
Claims (15)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201662399709P | 2016-09-26 | 2016-09-26 | |
US62/399709 | 2016-09-26 | ||
PCT/US2017/052609 WO2018057677A1 (en) | 2016-09-26 | 2017-09-21 | Trichlorodisilane |
Publications (1)
Publication Number | Publication Date |
---|---|
CN109715850A true CN109715850A (zh) | 2019-05-03 |
Family
ID=60002087
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201780057569.3A Pending CN109715850A (zh) | 2016-09-26 | 2017-09-21 | 三氯二硅烷 |
Country Status (7)
Country | Link |
---|---|
US (2) | US11142462B2 (zh) |
EP (1) | EP3516088A1 (zh) |
JP (1) | JP6934045B2 (zh) |
KR (1) | KR102349808B1 (zh) |
CN (1) | CN109715850A (zh) |
TW (1) | TWI742164B (zh) |
WO (1) | WO2018057677A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110997683A (zh) * | 2017-06-29 | 2020-04-10 | 美国陶氏有机硅公司 | 1,1,1-三氯乙硅烷的合成 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI784022B (zh) * | 2017-07-31 | 2022-11-21 | 中國大陸商南大光電半導體材料有限公司 | 1,1,1-參(二甲胺基)二矽烷及其製備方法 |
US10985010B2 (en) | 2018-08-29 | 2021-04-20 | Versum Materials Us, Llc | Methods for making silicon and nitrogen containing films |
US10916477B2 (en) | 2018-09-28 | 2021-02-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fin field-effect transistor devices and methods of forming the same |
DE102019101555B4 (de) | 2018-09-28 | 2023-01-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Metall-gate-schneideform |
CN112969818A (zh) | 2018-10-03 | 2021-06-15 | 弗萨姆材料美国有限责任公司 | 用于制备含硅和氮的膜的方法 |
US20240332005A1 (en) * | 2023-03-29 | 2024-10-03 | Applied Materials, Inc. | Methods for depositing dielectric films with increased stability |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1071927A (zh) * | 1991-10-17 | 1993-05-12 | 瓦克化学有限公司 | 甲基氯硅烷的制备方法 |
US20040224089A1 (en) * | 2002-10-18 | 2004-11-11 | Applied Materials, Inc. | Silicon-containing layer deposition with silicon compounds |
US20050145177A1 (en) * | 2003-12-30 | 2005-07-07 | Mcswiney Michael | Method and apparatus for low temperature silicon nitride deposition |
US20080026149A1 (en) * | 2006-05-31 | 2008-01-31 | Asm America, Inc. | Methods and systems for selectively depositing si-containing films using chloropolysilanes |
JP2015097255A (ja) * | 2013-10-07 | 2015-05-21 | 東京エレクトロン株式会社 | シリコン窒化物膜の成膜方法および成膜装置 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5310583A (en) | 1992-11-02 | 1994-05-10 | Dow Corning Corporation | Vapor phase deposition of hydrogen silsesquioxane resin in the presence of nitrous oxide |
US5968611A (en) * | 1997-11-26 | 1999-10-19 | The Research Foundation Of State University Of New York | Silicon nitrogen-based films and method of making the same |
WO2007030679A2 (en) | 2005-09-07 | 2007-03-15 | The Regents Of The University Of California | Materials for the formation of polymer junction diodes |
US7772097B2 (en) * | 2007-11-05 | 2010-08-10 | Asm America, Inc. | Methods of selectively depositing silicon-containing films |
JP5346904B2 (ja) * | 2009-11-27 | 2013-11-20 | 東京エレクトロン株式会社 | 縦型成膜装置およびその使用方法 |
WO2012057889A1 (en) * | 2010-10-29 | 2012-05-03 | Applied Materials, Inc. | Atomic layer deposition film with tunable refractive index and absorption coefficient and methods of making |
JP2012142369A (ja) * | 2010-12-28 | 2012-07-26 | Elpida Memory Inc | 半導体装置、および半導体装置の製造方法 |
TWI634073B (zh) * | 2013-09-05 | 2018-09-01 | 道康寧公司 | 2,2,4,4-四矽基五矽烷及其組成物、方法及用途 |
JP2015114830A (ja) * | 2013-12-11 | 2015-06-22 | 株式会社リコー | 情報処理装置、制御方法及び制御プログラム |
WO2016191199A1 (en) * | 2015-05-22 | 2016-12-01 | Dow Corning Corporation | Diisopropylaminopentachlorodisilane |
JP6529348B2 (ja) | 2015-06-05 | 2019-06-12 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置およびプログラム |
-
2017
- 2017-09-21 JP JP2019515826A patent/JP6934045B2/ja active Active
- 2017-09-21 KR KR1020197009956A patent/KR102349808B1/ko active IP Right Grant
- 2017-09-21 US US16/327,872 patent/US11142462B2/en active Active
- 2017-09-21 WO PCT/US2017/052609 patent/WO2018057677A1/en unknown
- 2017-09-21 EP EP17778100.2A patent/EP3516088A1/en active Pending
- 2017-09-21 CN CN201780057569.3A patent/CN109715850A/zh active Pending
- 2017-09-26 TW TW106133001A patent/TWI742164B/zh active
-
2021
- 2021-09-13 US US17/472,943 patent/US20210403330A1/en not_active Abandoned
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1071927A (zh) * | 1991-10-17 | 1993-05-12 | 瓦克化学有限公司 | 甲基氯硅烷的制备方法 |
US20040224089A1 (en) * | 2002-10-18 | 2004-11-11 | Applied Materials, Inc. | Silicon-containing layer deposition with silicon compounds |
US20050145177A1 (en) * | 2003-12-30 | 2005-07-07 | Mcswiney Michael | Method and apparatus for low temperature silicon nitride deposition |
US20080026149A1 (en) * | 2006-05-31 | 2008-01-31 | Asm America, Inc. | Methods and systems for selectively depositing si-containing films using chloropolysilanes |
JP2015097255A (ja) * | 2013-10-07 | 2015-05-21 | 東京エレクトロン株式会社 | シリコン窒化物膜の成膜方法および成膜装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110997683A (zh) * | 2017-06-29 | 2020-04-10 | 美国陶氏有机硅公司 | 1,1,1-三氯乙硅烷的合成 |
CN110997683B (zh) * | 2017-06-29 | 2023-03-31 | 南大光电半导体材料有限公司 | 1,1,1-三氯乙硅烷的合成 |
Also Published As
Publication number | Publication date |
---|---|
KR20190046971A (ko) | 2019-05-07 |
TWI742164B (zh) | 2021-10-11 |
KR102349808B1 (ko) | 2022-01-12 |
US20210403330A1 (en) | 2021-12-30 |
JP6934045B2 (ja) | 2021-09-08 |
EP3516088A1 (en) | 2019-07-31 |
TW201813927A (zh) | 2018-04-16 |
WO2018057677A1 (en) | 2018-03-29 |
US20190218103A1 (en) | 2019-07-18 |
JP2019530975A (ja) | 2019-10-24 |
US11142462B2 (en) | 2021-10-12 |
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Legal Events
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PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20210719 Address after: 67 Pingsheng Road, Shengpu Town, Suzhou Industrial Park, Suzhou City, Jiangsu Province Applicant after: JIANGSU NATA OPTO-ELECTRONIC MATERIAL Co.,Ltd. Address before: Delaware, USA Applicant before: DDP special electronic materials 9 Co.,Ltd. Effective date of registration: 20210719 Address after: Delaware, USA Applicant after: DDP special electronic materials 9 Co.,Ltd. Address before: michigan Applicant before: DOW CORNING Corp. Effective date of registration: 20210719 Address after: 239000, 117 Xincheng Avenue, Shitan Industrial Park, Shizi Town, Quanjiao County, Chuzhou City, Anhui Province Applicant after: Nanda optoelectronic semiconductor materials Co.,Ltd. Address before: No. 67, Pingsheng Road, Shengpu Town, Suzhou Industrial Park, Suzhou City, Jiangsu Province Applicant before: JIANGSU NATA OPTO-ELECTRONIC MATERIAL Co.,Ltd. |