CN109666920A - 制造金属氧化物膜的方法和包括金属氧化物膜的显示装置 - Google Patents
制造金属氧化物膜的方法和包括金属氧化物膜的显示装置 Download PDFInfo
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- CN109666920A CN109666920A CN201811172480.4A CN201811172480A CN109666920A CN 109666920 A CN109666920 A CN 109666920A CN 201811172480 A CN201811172480 A CN 201811172480A CN 109666920 A CN109666920 A CN 109666920A
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- metal oxide
- oxide film
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- 150000004706 metal oxides Chemical class 0.000 title claims abstract description 86
- 238000000034 method Methods 0.000 title claims abstract description 70
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 47
- 229910052751 metal Inorganic materials 0.000 claims abstract description 84
- 239000002184 metal Substances 0.000 claims abstract description 84
- 239000002243 precursor Substances 0.000 claims abstract description 71
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 239000012495 reaction gas Substances 0.000 claims abstract description 25
- 230000003647 oxidation Effects 0.000 claims abstract description 17
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 17
- 239000007921 spray Substances 0.000 claims description 24
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 18
- 239000010936 titanium Substances 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 14
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 12
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 12
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- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 7
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- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 4
- 125000002147 dimethylamino group Chemical group [H]C([H])([H])N(*)C([H])([H])[H] 0.000 claims description 3
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/405—Oxides of refractory metals or yttrium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/515—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using pulsed discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
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Abstract
提供了一种制造金属氧化物膜的方法以及一种包括该金属氧化物膜的显示装置。所述制造金属氧化物膜的方法包括:将反应气体和金属前驱体注入室中;在等离子体OFF状态下,在基底上形成第一金属前驱体膜;在等离子体ON状态下,通过使第一金属前驱体膜氧化来形成第一子金属氧化物膜;在等离子体OFF状态下,在第一子金属氧化物膜上形成第二金属前驱体膜,其中,金属氧化物膜具有非晶相、约20纳米(nm)至约130nm的厚度以及约10至约50的介电常数。
Description
本申请要求于2017年10月13日提交的第10-2017-0133462号韩国专利申请的优先权以及由此获得的所有权益,该韩国专利申请的全部内容通过引用包含于此。
技术领域
本发明的示例性实施例涉及一种制造金属氧化物膜的方法和一种包括金属氧化物膜的显示装置。
背景技术
随着多媒体的发展,显示装置变得越来越重要。因此,正在使用诸如液晶显示器和有机发光显示器的各种类型的显示装置。
在这些显示装置中,液晶显示器是最广泛使用的平板显示器的类型之一。液晶显示器通常包括一对基底和置于所述一对基底之间的液晶层,所述一对基底分别具有诸如像素电极和共电极的场产生电极。在液晶显示器中,电压被分别施加到场产生电极以在液晶层中产生电场。电场确定液晶层中液晶分子的取向并控制入射光的偏振。因此,图像显示在液晶显示器上。
另外,有机发光显示器使用有机发光二极管来显示图像,有机发光二极管通过电子和空穴的复合来产生光。有机发光显示器具有诸如响应速度快、亮度高、视角宽和功耗低的各种优势。
为了制造这种显示装置,化学气相沉积(“CVD”)方法正在被广泛使用。
发明内容
本发明的示例性实施例提供了一种制造具有预定厚度或更大厚度的高介电常数金属氧化物膜的方法。
本发明的示例性实施例还提供了一种制造非晶金属氧化物膜的方法。
本发明的示例性实施例还提供了一种包括具有高介电常数的非晶金属氧化物膜的显示装置。
然而,本发明的示例性实施例不限于这里阐述的示例性实施例。通过参照下面给出的本发明的详细描述,本发明的上述和其它示例性实施例对于本发明所属领域的普通技术人员将变得更加明显。
根据本发明的示例性实施例,提供了一种制造金属氧化物膜的方法。所述方法包括:将反应气体和金属前驱体注入室中;在等离子体OFF状态下,在基底上形成第一金属前驱体膜;在等离子体ON状态下,通过使第一金属前驱体膜氧化来形成第一子金属氧化物膜;以及在等离子体OFF状态下,在第一子金属氧化物膜上形成第二金属前驱体膜,其中,所提供的金属氧化物膜具有非晶相、约20纳米(nm)至约130nm的厚度以及约10至约50的介电常数。
在示例性实施例中,金属前驱体可以包括锆基材料、铪基材料和钛基材料中的至少一种。
在示例性实施例中,金属前驱体可以包括Zr(N(CH3)2(C2H5))3、Zr(N(CH3)C2H5)4、Zr(OC(CH3)3)4、Ti(N(CH3)2(C2H5))、Hf(N(CH3)3(C2H5))3、Hf(N(CH3)C2H5)4和Hf(OC(CH3)3)4中的至少一种。
在示例性实施例中,金属氧化物膜可以包括氧化锆、氧化铪和氧化钛中的至少一种。
在示例性实施例中,所述方法还可以包括在等离子体ON状态下,通过使第二金属前驱体膜氧化来形成第二子金属氧化物膜。
在示例性实施例中,可以执行一次或更多次在等离子体ON状态下通过使第一金属前驱体膜氧化来形成第一子金属氧化物膜的步骤以及在等离子体OFF状态下在第一子金属氧化物膜上形成第二金属前驱体膜的步骤。
在示例性实施例中,室内部的压力可以为约0.1托至约10托。
在示例性实施例中,室内部的温度可以为约100摄氏度(℃)至约400℃。
在示例性实施例中,将反应气体和金属前驱体注入室中的步骤可以包括将载体气体与金属前驱体一起注入。
在示例性实施例中,等离子体ON状态的时间间隔与等离子体OFF状态的时间间隔可以相等。
在示例性实施例中,等离子体ON状态的时间间隔与等离子体OFF状态的时间间隔的比率可以为1:2、1:3、1:4和1:5中之一。
根据本发明的另一示例性实施例,提供了一种显示装置,所述显示装置包括基底和设置在基底上的金属氧化物膜,其中,金属氧化物膜具有非晶相、约20nm至约130nm的厚度以及约10至约50的介电常数。
在示例性实施例中,显示装置还可以包括:第一电极和第二电极,被设置为金属氧化物膜置于第一电极与第二电极之间,其中,第一电极、第二电极和金属氧化物膜可以构成电容器。
在示例性实施例中,金属氧化物膜的厚度可以为约90nm至约130nm。
在示例性实施例中,显示装置还可以包括设置在第二电极与金属氧化物膜之间的绝缘膜。
在示例性实施例中,绝缘膜可以包括氧化硅、氮化硅和氮氧化硅中的至少一种。
在示例性实施例中,金属氧化物膜的厚度可以为约60nm至约80nm。
在示例性实施例中,绝缘膜的厚度可以为约30nm至约50nm。
在示例性实施例中,金属氧化物膜可以包括氧化锆、氧化铪和氧化钛中的至少一种。
显示装置还可以包括设置在金属氧化物膜上的透明电极、设置在透明电极上的有机发光层以及设置在有机发光层上的共电极。
根据本发明的另一示例性实施例,提供了一种制造金属氧化物膜的设备,所述设备包括:室;基座,设置在室内部,并且被构造为支撑基底;喷头,面对基座;以及供电单元,将射频电力供应到喷头,其中,限定有电力供应到喷头的等离子体ON状态和电力未供应到喷头的等离子体OFF状态,等离子体ON状态和等离子体OFF状态彼此交替,并且其中,在等离子体ON状态下,在喷头与基座之间提供等离子体区域。
附图说明
通过下面结合附图对示例性实施例进行描述,这些和/或其它示例性实施例将变得明显且更易于理解,在附图中:
图1是用于制造金属氧化物膜的设备的示例性实施例的概念图,所述设备被设计为执行制造金属氧化物膜的方法;
图2是示出制造金属氧化物膜的方法的示例性实施例的流程图;
图3是示出制造金属氧化物膜的方法的示例性实施例的剖视图;
图4是示出制造金属氧化物膜的方法的示例性实施例的剖视图;
图5是示出制造金属氧化物膜的方法的示例性实施例的剖视图;
图6是示出制造金属氧化物膜的方法的示例性实施例的图;
图7A和图7B分别示出根据示例性实施例的制造金属氧化物膜的方法的所得结构和制造金属氧化物膜的传统方法的传统结构的透射电子显微镜(“TEM”)照片;
图8示出示例性实施例的所得结构和使用传统的原子层沉积(“ALD”)方法提供的薄膜的X射线衍射(“XRD”)分析的结果;
图9是显示装置的示例性实施例的剖视图;
图10是显示装置的示例性实施例的剖视图;
图11是根据图10的示例性实施例的显示装置的剖视图;
图12是显示装置的示例性实施例的剖视图;以及
图13是显示装置的示例性实施例的局部剖视图。
具体实施方式
通过参照附图并参考将要被详细地描述的示例性实施例,本发明的优点和特征以及用于实现这些优点和特征的方法将是明显的。然而,本发明不限于在下文公开的示例性实施例,而是可以以不同的形式来实施。在描述中限定的诸如详细的构造和元件的内容只是为了帮助本领域普通技术人员全面理解本发明而提供的具体细节,本发明仅被限定在权利要求的范围之内。
如果元件被描述为与另一元件相关,诸如“在”另一元件“上”或者“位于”不同的元件或层“上”,那么包括元件直接位于另一元件或层上的情况以及元件通过另一层或又一元件位于另一元件上的情况两者。相反,如果元件被描述为与另一元件直接相关,诸如“直接在”另一元件“上”或者“直接位于”不同的元件或层“上”,那么表示元件位于另一元件或层上而其间没有中间元件或层的情况。在对本发明的整个描述中,相同的附图标记在不同附图中用于相同的元件。
尽管使用术语“第一”、“第二”等来描述不同的构成元件,但是这样的构成元件不受所述术语的限制。这些术语仅用于将构成元件与其它构成元件区分开。因此,在下面的描述中,第一构成元件可以是第二构成元件。
这里使用的术语仅是出于描述特定实施例的目的,并非意图限制。如在这里所使用的,除非上下文另外明确指出,否则单数形式的“一个(种/者)”和“该/所述”意图包括复数形式(包括“至少一个(种/者)”)。“至少一个(种/者)”不应被解释为限制“一个(种/者)”。“或者”意指“和/或”。如这里所用的,术语“和/或”包括一个或更多个相关列出项的任意和全部组合。还将理解的是,当术语“包括”和/或其变型或者“包含”和/或其变型在本说明书中使用时,表示存在所述的特征、区域、整体、步骤、操作、元件和/或组件,但是不排除存在或添加一个或更多个其它特征、区域、整体、步骤、操作、元件、组件和/或它们的组。
此外,可以在这里使用诸如“下”或“底”以及“上”或“顶”的相对术语,以描述如在附图中所示出的一个元件与另一元件的关系。将理解的是,相对术语意在包含装置的除了在附图中描绘的方位之外的不同方位。例如,如果附图之一中的装置被翻转,那么描述为在其它元件的“下”侧上的元件将随后被定位为在其它元件的“上”侧上。因此,根据附图的具体方位,示例性术语“下”可以包括“下”和“上”两种方位。相似地,如果附图之一中的装置被翻转,那么描述为“在”其它元件“下方”或“之下”的元件将随后被定位为“在”其它元件“上方”。示例性术语“在……下方”或“在……之下”可以因此包括上方和下方两种方位。
如在这里使用的“大约”或“近似”包括所陈述的值,并意味着:考虑到正在被谈及的测量以及与具体量的测量有关的误差(即,测量系统的局限性),在由本领域的普通技术人员确定的具体值的可接受的偏差范围之内。例如,“大约”可以意指在一个或更多个标准偏差内,或者在所陈述的值的±30%、±20%、±10%或±5%之内。
除非另有定义,否则在这里使用的全部术语(包括技术术语和科学术语)具有与本发明所属领域的普通技术人员通常所理解的含义相同的含义。还将理解的是,除非在这里明确地如此定义,否则术语(诸如在通用的字典中定义的术语)应被解释为具有与相关领域和本发明中的上下文中它们的意思一致的意思,并且将不以理想化或过于形式化的含义来解释。
在这里参照作为理想化实施例的示意图的剖视图来描述示例性实施例。如此,将预计由例如制造技术和/或公差导致的示出的形状的变化。因此,在这里描述的实施例不应被解释为局限于如在此示出的区域的具体形状,而将包括例如由制造引起的形状的偏差。例如,示出或描述为平坦的区域通常地可以具有粗糙和/或非线性特征。此外,示出的锐角可以被倒圆。因此,在附图中示出的区域实际上是示意性的,其形状不意图示出区域的精确形状,也不意图限制权利要求的范围。
在下文中,将参照附图描述本发明的实施例。
图1是用于制造金属氧化物膜的设备的概念图,所述设备被设计为执行根据示例性实施例的制造金属氧化物膜的方法。
参照图1,用于制造金属氧化物膜的设备可以包括室CH、基座300、喷头SH、供电单元124、进口100和出口(未示出)。
室CH可以限定工艺所需的内部空间。随后将要描述的多个元件可以设置在室CH的内部空间中。室CH可以根据工艺步骤保持大气压状态或真空状态。另外,室CH的内部空间可以根据工艺步骤连接到外部空气或者可被密封。
基座300可以设置在室CH内的空间的下部中。基座300可以支撑待处理的基底S。
在示例性实施例中,基底S可以是在显示装置中使用的绝缘基底。
尽管在图中未示出,但是在示例性实施例中,基座300可以连接到用于使基底S向上和向下移动的驱动单元。因此,放置在基座300上的基底S可以根据需要在室CH内的空间中向上或向下移动。
尽管在图中未示出,但是基座300可以连接到用于改变基底S的温度的温度控制单元。因此,基底S的温度可以根据工艺条件来调节。
喷头SH可以放置为面对基座300。喷头SH可以包括多个喷嘴以使通过进口100供应的气体均匀地分布。也就是说,通过进口100供应的气体可以经由喷头SH均匀地分布到室CH内。
喷头SH可以连接到供电单元124。在示例性实施例中,例如,供电单元124可以向喷头SH供应射频(“RF”)电力。
基座300可以放置成面对喷头SH。如随后将详细描述的,在示例性实施例中,喷头SH可以用作顶电极,基座300可以用作底电极。因此,当向喷头SH供应电力时,可以在喷头SH与基座300之间提供等离子体区域PL。在等离子体区域PL中,随后将要描述的反应气体可以被激发成等离子体状态。将在后面对此进行详细描述。
现在将参照图2至图5描述根据示例性实施例的制造金属氧化物膜的方法。
图2是示出根据示例性实施例的制造金属氧化物膜的方法的流程图。图3至图5是示出根据示例性实施例的制造金属氧化物膜的方法的剖视图。
参照图2以及图1和图3至图5,根据示例性实施例的制造金属氧化物膜的方法可以包括:将反应气体和金属前驱体注入室CH中(操作S1),在基底S上形成第一金属前驱体膜501(操作S2),通过使第一金属前驱体膜501氧化来形成第一子金属氧化物膜502(操作S3),以及在第一子金属氧化物膜502上形成第二金属前驱体膜503(操作S4)。
首先,可以执行将反应气体和金属前驱体注入室CH中的步骤。在示例性实施例中,可以同时地将反应气体和金属前驱体提供到室CH中。在另一示例性实施例中,可以顺序地将反应气体和金属前驱体提供到室CH中。
在示例性实施例中,贯穿整个工艺,反应气体和金属前驱体的注入可以是连续的。换言之,在所述工艺期间,可以连续地供应反应气体和金属前驱体。
在另一示例性实施例中,反应气体和金属前驱体的注入可以是不连续的。在这种情况下,可以定期地或非定期地将反应气体和金属前驱体供应到室CH中。
在示例性实施例中,反应气体可以是一氧化二氮(N2O)和/或氧气(O2)。不论哪种情况,反应气体可以产生下面将要描述的处于等离子体状态的氧阴离子。
在示例性实施例中,例如,金属前驱体可以包括锆(Zr)基材料、铪(Hf)基材料和钛(Ti)基材料中的至少一种。
更具体地,例如,金属前驱体可以包括Zr(N(CH3)2(C2H5))3、Zr(N(CH3)C2H5)4、Zr(OC(CH3)3)4、Ti(N(CH3)2(C2H5))、Hf(N(CH3)3(C2H5))3、Hf(N(CH3)C2H5)4和Hf(OC(CH3)3)4中的至少一种。
在示例性实施例中,还可以与反应气体和金属前驱体一起注入载体气体。
载体气体可以是使金属前驱体移动而不介入反应的气体。
在示例性实施例中,载体气体可以是惰性气体。在示例性实施例中,例如,载体气体可以是氩(Ar)气。
接下来,参照图3,可以执行在基底S上形成第一金属前驱体膜501的步骤。
为了便于描述,将限定一些术语。如这里所使用的术语“等离子体ON状态”指的是因为电力供应到喷头SH,所以在喷头SH与基座300之间提供等离子体区域PL的状态。如这里所使用的术语“等离子体OFF状态”指的是因为电力未提供到喷头SH,所以没有在喷头SH与基座300之间提供等离子体区域PL的状态。
可以在等离子体OFF状态下执行在基底S上形成第一金属前驱体膜501的步骤。也就是说,在这种状态下,反应气体和金属前驱体可以彼此不反应。
在等离子体OFF状态下,可以在基底S上吸附多个金属前驱体700。金属前驱体700可以在基底S上形成第一金属前驱体膜501。在示例性实施例中,例如,所提供的第一金属前驱体膜501可以是单层。
接下来,参照图4,可以执行通过使第一金属前驱体膜501氧化来形成第一子金属氧化物膜502的步骤(操作S3)。
可以在等离子体ON状态下执行通过使第一金属前驱体膜501氧化来形成第一子金属氧化物膜502的步骤(操作S3)。在等离子体ON状态下,反应气体可以变成等离子体状态。因此,反应气体可以产生氧阴离子。
参照图4,处于等离子体状态的反应气体800可以与金属前驱体700结合以形成第一子金属氧化物膜502。换言之,可以通过反应气体800使第一金属前驱体膜501氧化。在示例性实施例中,例如,由于金属前驱体700是Zr基材料、Hf基材料和Ti基材料中的至少一种,因此所提供的第一子金属氧化物膜502可以包括氧化锆(ZrO2)、氧化铪(HfO2)和氧化钛(TiO2)中的至少一种。
接下来,参照图5,可以执行在第一子金属氧化物膜502上形成第二金属前驱体膜503的步骤(操作S4)。可以在等离子体OFF状态下执行在第一子金属氧化物膜502上形成第二金属前驱体膜503的步骤。
被氧化之前的第一金属前驱体膜501(参照图3)与金属前驱体700之间产生均匀颗粒之间的排斥力。因此,金属前驱体700不被吸附在第一金属前驱体膜501上。当第一金属前驱体膜501氧化成第一子金属氧化物膜502时,减弱了第一子金属氧化物膜502与金属前驱体700之间的排斥力。因此,金属前驱体700可以被吸附在第一子金属氧化物膜502上。因此,可以在第一子金属氧化物膜502上设置包括金属前驱体700的第二金属前驱体膜503。与上述的第一金属前驱体膜501相同,第二金属前驱体膜503可以是单层。
根据示例性实施例的制造高介电常数(k)金属氧化物膜的方法还可以包括通过使第二金属前驱体膜503氧化来形成第二子金属氧化物膜的步骤。
具体地,在形成第二金属前驱体膜503之后,在等离子体ON状态下,处于等离子体状态的反应气体800可以与第二金属前驱体膜503结合以形成第二子金属氧化物膜。第二子金属氧化物膜可以与第一子金属氧化物膜502基本相同。
可以重复地执行一次或更多次上述工艺,直到获得所需厚度的膜。
在薄膜生长到所需厚度之后,可以将基底S从室CH中取出(操作S5)。
可以在等离子体ON状态和等离子体OFF状态定期地或非定期地重复的条件下执行根据示例性实施例的制造金属氧化物膜的方法。
图6是示出根据示例性实施例的制造金属氧化物膜的方法的图。
在示例性实施例中,制造金属氧化物膜的方法可以在等离子体OFF状态下开始。
参照图6以及图1至图5,首先,可以进行作为等离子体OFF状态的第一时段1p。可以在第一时段1p中执行在基底S上形成第一金属前驱体膜501的步骤(操作S2)。
然后,可以进行作为等离子体ON状态的第二时段2p。可以在第二时段2p中执行通过使第一金属前驱体膜501氧化来形成第一子金属氧化物膜502的步骤(操作S3)。
然后,可以进行作为等离子体OFF状态的第三时段3p。可以在第三时段3p中执行在第一子金属氧化物膜502上形成第二金属前驱体膜503的步骤(操作S4)。
然后,可以进行作为等离子体ON状态的第四时段4p。在第四时段4p中,可以将设置在第一子金属氧化物膜502上的第二金属前驱体膜503氧化成第二子金属氧化物膜(未示出)。
上述工艺可以概括为如下。根据示例性实施例的制造高k金属氧化物膜的方法可以包括第n时段的等离子体OFF状态和第n+1时段的等离子体ON状态。
此外,第n时段和第n+1时段可以彼此交替。
在示例性实施例中,第n时段的时间间隔可以为约0.1秒至约10秒,使得可以充分地吸附金属前驱体700。
在图6中,第n时段和第n+1时段的时间间隔彼此相等。然而,实施例不限于这种情况。也就是说,在示例性实施例中,例如,第n时段和第n+1时段的时间间隔的比率可以是1:2、1:3、1:4和1:5中之一。
在示例性实施例中,第n时段和第n+1时段的时间间隔可以是不规则的。也就是说,可以根据工艺的条件或目的来改变第n时段和第n+1时段的时间间隔。
根据示例性实施例的制造金属氧化物膜的方法可以在等离子体ON状态之后终止。也就是说,最后沉积的膜可以是包括已氧化的金属前驱体的金属氧化物膜。
传统的原子层沉积(“ALD”)方法包括吹扫时间。因此,例如,需要很多时间来形成具有大面积且具有等于或大于约20纳米(nm)的厚度的薄膜。根据示例性实施例的制造高k金属氧化物膜的方法可以通过同时供应反应气体和金属前驱体来省略吹扫工艺。因此,可以在短时间内提供具有等于或大于约20nm的厚度的薄膜。
另外,制造方法的所得结构可以具有以下特性。
在示例性实施例中,例如,作为上述制造方法的结果提供的金属氧化物膜的厚度可以为约20nm至约130nm。
作为制造方法的结果提供的金属氧化物膜可以具有高介电常数。在示例性实施例中,例如,金属氧化物膜可以具有约10至约50的介电常数(k)。
因为由反应气体产生的氧阴离子的断键电荷是不连续的,因此通过上述工艺生长的所得结构可以具有非晶相。现在将参照图7A、图7B和图8对此进行详细描述。
图7A和图7B分别示出根据示例性实施例的制造金属氧化物膜的方法的所得结构和制造金属氧化物膜的传统方法的传统结构的透射电子显微镜(“TEM”)照片。
图7A示出了根据示例性实施例的所得结构的衍射图案,图7B示出了使用传统ALD方法提供的薄膜的衍射图案。
参照图7A,衍射图案具有环形形状。当薄膜的颗粒在所有方向上散射光时,即,当颗粒为非晶时,发生这种现象。这表明示例性实施例的所得结构具有非晶相。
参照图7B,衍射图案包括多个点。当薄膜的颗粒在特定方向上散射光时,即,当颗粒为晶体时,发生这种现象。采用传统的ALD方法,提供晶体金属氧化物膜。
图8是比较根据示例性实施例的制造高k金属氧化物膜的方法和传统的ALD方法的所得结构的曲线图。
图8示出了示例性实施例的所得结构和使用传统的ALD方法提供的薄膜的X射线衍射(“XRD”)分析的结果。
这里,曲线(a)表示示例性实施例的所得结构,曲线(b)表示使用传统方法提供的薄膜。
当对具有晶体结构的薄膜进行XRD分析时,观察到至少一个峰。
参照曲线(a)的分析结果,未检测到作为晶体结构的证明的峰。也就是说,可以看出,示例性实施例的所得结构具有非晶结构。
曲线(b)包括一个或更多个峰11、12、13和14。也就是说,可以看出,使用传统的ALD方法提供的金属氧化物膜具有晶体结构。
根据示例性实施例的制造高k金属氧化物膜的方法可以在下面的工艺条件下执行。
在示例性实施例中,例如,室CH可以保持真空状态,并且室CH的压力可以在约0.1托与约10托之间进行调节。
在示例性实施例中,例如,室CH内部的温度可以在约100摄氏度(℃)与约400℃之间进行调节。
现在将描述包括根据示例性实施例的金属氧化物膜的显示装置。包括根据示例性实施例的金属氧化物膜的显示装置可以使用根据上述实施例的制造金属氧化物膜的方法来制造。
图9是根据示例性实施例的显示装置的剖视图。
参照图9,根据示例性实施例的显示装置包括基底S和设置在基底S上的金属氧化物膜220。
在示例性实施例中,金属氧化物膜220可以是使用根据示例性实施例的制造金属氧化物膜的方法来提供的薄膜。
在示例性实施例中,金属氧化物膜220可以具有第一厚度t1。在示例性实施例中,例如,第一厚度t1可以为约20nm至约130nm。
在示例性实施例中,金属氧化物膜220可以遍及整个区域具有非晶相。
在示例性实施例中,金属氧化物膜220可以是高k金属氧化物膜。因此,金属氧化物膜220的介电常数(k)可以为约10至约50。
图10和图11是根据示例性实施例的显示装置的剖视图。
参照图10和图11,根据示例性实施例的显示装置可以包括至少一个电容器Cst,所述电容器Cst包括第一电极E1、第二电极E2以及设置在第一电极E1与第二电极E2之间的金属氧化物膜(未示出)。在示例性实施例中,包括在显示装置中的电容器Cst可以是存储电容器。
在示例性实施例中,显示装置可以是有机发光显示器。
在这种情况下,缓冲层BU可以设置在基底S上。缓冲层BU可以防止湿气和氧从外部渗透穿过基底S。另外,缓冲层BU可以使基底S的表面平坦化。在示例性实施例中,例如,缓冲层BU可以包括氮化硅(SiNx)膜、氧化硅(SiO2)膜和氮氧化硅(SiOxNy)膜中的至少一种。在另一示例性实施例中,根据基底S的类型或工艺条件可以省略缓冲层BU。
包括半导体图案ACT的半导体层可以设置在缓冲层BU上。将基于半导体图案ACT来描述半导体层。在示例性实施例中,例如,半导体图案ACT可以包括多晶硅、单晶硅、低温多晶硅、非晶硅和氧化物半导体中的至少一种的组合。在示例性实施例中,半导体图案ACT可以包括未掺有杂质的沟道区ACTa和掺有杂质的源区ACTb和漏区ACTc。源区ACTb位于沟道区ACTa的一侧,并且电连接到随后将要描述的源电极SE。漏区ACTc位于沟道区ACTa的另一侧,并且电连接到随后将要描述的漏电极DE。
栅极绝缘膜GI可以设置在包括半导体图案ACT的半导体层上。在示例性实施例中,栅极绝缘膜GI可以是栅极绝缘层。在示例性实施例中,例如,栅极绝缘膜GI可以包括诸如氧化硅(SiOx)和氮化硅(SiNx)的无机绝缘材料以及诸如苯并环丁烯(“BCB”)、丙烯酸材料和聚酰亚胺的有机绝缘材料中的任何一种。
包括栅电极GE的栅极导体可以设置在栅极绝缘膜GI上。栅电极GE可以从扫描线(未示出)延伸,并且与半导体图案ACT叠置。在示例性实施例中,例如,栅极导体可以包括:包括铝合金的铝(Al)基金属、包括银合金的银(Ag)基金属、包括铜合金的铜(Cu)基金属、包括钼合金的钼(Mo)基金属、铬(Cr)、钛(Ti)和钽(Ta)中的至少一种。
第一绝缘膜ILD1可以设置在包括栅电极GE的栅极导体上。第一绝缘膜ILD1可以是高k金属氧化物膜。也就是说,例如,第一绝缘膜ILD1可以具有非晶相,并且第一绝缘膜ILD1的介电常数(k)可以为约10至约50。在示例性实施例中,例如,第一绝缘膜ILD1的厚度可以为约20nm至约130nm。
在示例性实施例中,例如,第一绝缘膜ILD1可以包括氧化锆(ZrO2)、氧化铪(HfO2)和氧化钛(TiO2)中的至少一种。
包括源电极SE和漏电极DE的数据导体可以设置在第一绝缘膜ILD1上。数据导体可以包括源电极SE和漏电极DE。源电极SE和漏电极DE设置在第一绝缘膜ILD1上以彼此分隔开。数据导体可以包括金属、合金、金属氮化物、导电金属氧化物和透明导电材料中的至少一种。在示例性实施例中,数据导体可以具有包括镍(Ni)、钴(Co)、钛(Ti)、银(Ag)、铜(Cu)、钼(Mo)、铝(Al)、铍(Be)、铌(Nb)、金(Au)、铁(Fe)、硒(Se)和钽(Ta)中的至少一种的单层结构或多层结构。在示例性实施例中,例如,源电极SE和漏电极DE可以包括钛(Ti)、锆(Zr)、钨(W)、钽(Ta)、铌(Nb)、铂(Pt)、铪(Hf)、氧(O)和氮(N)中的至少一种和上述金属中的至少一种的合金。
上述的半导体图案ACT、栅电极GE、源电极SE和漏电极DE构成第二开关元件TR2。在图10中,第二开关元件TR2被示出为顶栅型。然而,第二开关元件TR2不限于顶栅型。也就是说,在另一示例性实施例中,第二开关元件TR2可被设置为底栅型。
第二绝缘膜ILD2可以设置在数据导体上。第二绝缘膜ILD2可以去除台阶,从而增大随后将描述的像素电极250和有机发光层270的发光效率。在示例性实施例中,第二绝缘膜ILD2可以包括有机材料。在示例性实施例中,例如,第二绝缘膜ILD2可以包括聚酰亚胺、聚丙烯酸和聚硅氧烷中的至少一种。在示例性实施例中,第二绝缘膜ILD2可以包括无机材料或者无机材料和有机材料的复合物。第一接触孔CNT1可以限定在第二绝缘膜ILD2中以使漏电极DE的至少一部分暴露。
像素电极250可以设置在第二绝缘膜ILD2上。像素电极250可以电连接到通过第一接触孔CNT1暴露的漏电极DE。也就是说,像素电极250可以是作为空穴注入电极的阳极。当设置为阳极时,像素电极250可以包括具有高逸出功的材料以促进空穴注入。另外,像素电极250可以是反射电极、透反射电极或透射电极。在示例性实施例中,像素电极250可以包括反射材料。在示例性实施例中,例如,反射材料可以包括银(Ag)、镁(Mg)、铬(Cr)、金(Au)、铂(Pt)、镍(Ni)、铜(Cu)、钨(W)、铝(Al)、铝-锂(Al-Li)、镁-铟(Mg-In)和镁-银(Mg-Ag)中的至少一种。
在示例性实施例中,像素电极250可被设置为单层。在可选择的示例性实施例中,像素电极250可被设置为堆叠有两种或更多种材料的多层。
在示例性实施例中,当被设置为多层时,像素电极250可以包括反射膜和设置在反射膜上的透明或半透明电极。在示例性实施例中,像素电极250可以包括反射膜和设置在反射膜下方的透明或半透明电极。在示例性实施例中,例如,像素电极250可以具有ITO/Ag/ITO的三层结构。
这里,例如,透明或半透明电极可以包括氧化铟锡(“ITO”)、氧化铟锌(“IZO”)、氧化锌(ZnO)、氧化铟(In2O3)、氧化铟镓(“IGO”)和氧化铝锌(“AZO”)中的至少一种。
像素限定层PDL可以设置在像素电极250上。至少部分地暴露像素电极250的开口限定在像素限定层PDL中。像素限定层PDL可以包括有机材料或无机材料。在示例性实施例中,例如,像素限定层PDL可以包括诸如光致抗蚀剂、聚酰亚胺树脂、丙烯酸树脂、硅化合物或聚丙烯酸树脂的材料。
有机发光层270可以设置在像素电极250和像素限定层PDL上。更具体地,有机发光层270可以设置在像素电极250的通过像素限定层PDL的开口暴露的区域上。在示例性实施例中,有机发光层270可以至少部分地覆盖像素限定层PDL的侧壁。
在示例性实施例中,例如,有机发光层270可以发射红色、蓝色和绿色中的一种颜色的光。在示例性实施例中,例如,有机发光层270可以发射白光,或者发射青色、品红色和黄色中的一种颜色的光。当有机发光层270发射白光时,它可以包括白色发光材料,或者可以具有红色发光层、绿色发光层和蓝色发光层的堆叠件。
共电极280可以设置在有机发光层270和像素限定层PDL上。在示例性实施例中,共电极280可以设置在有机发光层270和像素限定层PDL的整个表面上。在示例性实施例中,共电极280可以是阴极。在示例性实施例中,例如,共电极280可以包括Li、Ca、LiF/Ca、LiF/Al、Al、Ag和Mg中的至少一种。另外,共电极280可以包括具有低逸出功的材料。在示例性实施例中,例如,共电极280可以是包括ITO、IZO、氧化锌(ZnO)、氧化铟(In2O3)、IGO和AZO中的至少一种的透明或半透明电极。
上述的像素电极250、有机发光层270和共电极280可以构成有机发光二极管OLED。然而,有机发光二极管OLED不限于此构造,并且可以是进一步包括空穴注入层(“HIL”)、空穴传输层(“HTL”)、电子传输层(“ETL”)和电子注入层(“EIL”)的多层结构。
对向基底290可以放置成面对基底S。对向基底290可以通过密封构件与基底S结合。在示例性实施例中,对向基底290可以是透明绝缘基底。当对向基底290是透明绝缘基底时,例如,透明绝缘基底可以是玻璃基底、石英基底、透明树脂基底等。
在示例性实施例中,封装膜(未示出)代替对向基底290可以设置在共电极280上。封装膜可以包括至少一种无机膜和/或至少一种有机膜。
参照图11,第一电极E1和第二电极E2可被设置为第一绝缘膜ILD1置于它们之间。
在示例性实施例中,第一电极E1、第二电极E2和第一绝缘膜ILD1可以构成存储电容器Cst。也就是说,第一绝缘膜ILD1可以是存储电容器Cst的电介质。
在示例性实施例中,第一电极E1可以与栅电极GE设置在相同的层中,并且第二电极E2可以与源电极SE或漏电极DE设置在相同的层中。当元件“设置在相同的层中”时,这可以意味着元件在同一工艺中同时形成,并且因此包括相同的材料。
在示例性实施例中,例如,第一绝缘膜ILD1的厚度可以为约100nm至约110nm。
根据实施例的金属氧化物膜具有非常小的漏电流。因此,金属氧化物膜可以用于实现具有优异的电特性的电容器。
图12是根据示例性实施例的显示装置的剖视图。
图12与图11的不同之处在于第一电极E1和第二电极E2被设置为第三绝缘膜ILD3置于它们之间。
在示例性实施例中,第一电极E1、第二电极E2和第三绝缘膜ILD3可以构成编程电容器Cpr。也就是说,第三绝缘膜ILD3可以是编程电容器Cpr的电介质。
在这种情况下,第三绝缘膜ILD3可以是高k金属氧化物膜。也就是说,例如,第三绝缘膜ILD3可以具有非晶相,并且可以具有约10至约50的介电常数(k)。在示例性实施例中,例如,第三绝缘膜ILD3的厚度可以为约90nm至约130nm。
在示例性实施例中,例如,第三绝缘膜ILD3可以包括氧化锆(ZrO2)、氧化铪(HfO2)和氧化钛(TiO2)中的至少一种。
图13是根据示例性实施例的显示装置的局部剖视图。
参照图13,第一绝缘膜ILD1_1可以是第一子膜511和第二子膜512的层压件。
在示例性实施例中,第一子膜511可以是金属氧化物膜。在这种情况下,第一子膜511可以具有非晶相。在示例性实施例中,例如,第一子膜511的介电常数(k)可以为约10至约50。
在示例性实施例中,例如,第一子膜511可以包括氧化锆(ZrO2)、氧化铪(HfO2)和氧化钛(TiO2)中的至少一种。
在示例性实施例中,例如,第一子膜511的厚度d1可以为约60nm至约80nm。
第二子膜512可以设置在第一子膜511上。在示例性实施例中,例如,第二子膜512可以包括氮化硅(SiNx)膜、氧化硅(SiO2)膜和氮氧化硅(SiOxNy)膜中的至少一种。
在示例性实施例中,例如,第二子膜512的厚度d2可以为约30nm至约50nm。
如上所述,第一绝缘膜ILD1_1可以是电容器的电介质。当电容器的电介质是金属氧化物膜和含硅绝缘膜的层压件时,可以稳定地保持它的电特性。
在图13中,第一绝缘膜ILD1_1包括第一子膜511和第二子膜512。然而,实施例不限于这种情况。
在示例性实施例中,图12的第三绝缘膜ILD3可以具有图13中描述的结构。
根据实施例,显示装置的电阻可以在工艺期间实时测量。
然而,示例性实施例的效果不限于这里阐述的效果。通过参照权利要求,示例性实施例的上述和其它效果对于示例性实施例所属领域的普通技术人员将变得更加明显。
尽管已经参照本发明的示例性实施例具体举例说明并描述了本发明,但是本领域普通技术人员将理解的是,在不脱离如由权利要求限定的本发明的精神和范围的情况下,可以在其中做出形式上和细节上的各种改变。应仅以描述性意义而不是出于限制的目的来考虑示例性实施例。
Claims (23)
1.一种制造金属氧化物膜的方法,所述方法包括以下步骤:
将反应气体和金属前驱体注入室中;
在等离子体OFF状态下,在基底上形成第一金属前驱体膜;
在等离子体ON状态下,通过使所述第一金属前驱体膜氧化来形成第一子金属氧化物膜;以及
在所述等离子体OFF状态下,在所述第一子金属氧化物膜上形成第二金属前驱体膜,
其中,所述金属氧化物膜具有非晶相、20纳米至130纳米的厚度以及10至50的介电常数。
2.根据权利要求1所述的方法,其中,所述金属前驱体包括锆基材料、铪基材料和钛基材料中的至少一种。
3.根据权利要求2所述的方法,其中,所述金属前驱体包括Zr(N(CH3)2(C2H5))3、Zr(N(CH3)C2H5)4、Zr(OC(CH3)3)4、Ti(N(CH3)2(C2H5))、Hf(N(CH3)3(C2H5))3、Hf(N(CH3)C2H5)4和Hf(OC(CH3)3)4中的至少一种。
4.根据权利要求2所述的方法,其中,所述金属氧化物膜包括氧化锆、氧化铪和氧化钛中的至少一种。
5.根据权利要求1所述的方法,所述方法还包括在所述等离子体ON状态下,通过使所述第二金属前驱体膜氧化来形成第二子金属氧化物膜。
6.根据权利要求1所述的方法,其中,执行一次或更多次在所述等离子体ON状态下通过使所述第一金属前驱体膜氧化来形成所述第一子金属氧化物膜的步骤以及在所述等离子体OFF状态下在所述第一子金属氧化物膜上形成所述第二金属前驱体膜的步骤。
7.根据权利要求1所述的方法,其中,所述室内部的压力为0.1托至10托。
8.根据权利要求1所述的方法,其中,所述室内部的温度为100摄氏度至400摄氏度。
9.根据权利要求1所述的方法,其中,将所述反应气体和所述金属前驱体注入所述室中的步骤包括将载体气体与所述金属前驱体一起注入。
10.根据权利要求1所述的方法,其中,所述等离子体ON状态的时间间隔与所述等离子体OFF状态的时间间隔相等。
11.根据权利要求1所述的方法,其中,所述等离子体ON状态的时间间隔与所述等离子体OFF状态的时间间隔的比率为1:2、1:3、1:4和1:5中之一。
12.一种显示装置,所述显示装置包括:
基底;以及
金属氧化物膜,设置在所述基底上,
其中,所述金属氧化物膜具有非晶相、20纳米至130纳米的厚度以及10至50的介电常数。
13.根据权利要求12所述的显示装置,所述显示装置还包括:第一电极和第二电极,被设置为所述金属氧化物膜置于所述第一电极与所述第二电极之间,其中,所述第一电极、所述第二电极和所述金属氧化物膜构成电容器。
14.根据权利要求13所述的显示装置,其中,所述金属氧化物膜的所述厚度为90纳米至130纳米。
15.根据权利要求13所述的显示装置,其中,所述显示装置还包括设置在所述第二电极与所述金属氧化物膜之间的绝缘膜。
16.根据权利要求15所述的显示装置,其中,所述绝缘膜包括氧化硅、氮化硅和氮氧化硅中的至少一种。
17.根据权利要求16所述的显示装置,其中,所述金属氧化物膜的所述厚度为60纳米至80纳米。
18.根据权利要求17所述的显示装置,其中,所述绝缘膜的厚度为30纳米至50纳米。
19.根据权利要求12所述的显示装置,其中,所述金属氧化物膜包括氧化锆、氧化铪和氧化钛中的至少一种。
20.根据权利要求12所述的显示装置,所述显示装置还包括:
透明电极,设置在所述金属氧化物膜上;
有机发光层,设置在所述透明电极上;以及
共电极,设置在所述有机发光层上。
21.一种用于制造金属氧化物膜的设备,所述设备包括:
室;
基座,设置在所述室内部,并且被构造为支撑基底;
喷头,面对所述基座;以及
供电单元,将射频电力供应到所述喷头,
其中,限定有电力供应到所述喷头的等离子体ON状态和电力未供应到所述喷头的等离子体OFF状态,所述等离子体ON状态和所述等离子体OFF状态彼此交替,并且其中,在所述等离子体ON状态下,在所述喷头与所述基座之间提供等离子体区域。
22.根据权利要求21所述的设备,其中,所述等离子体ON状态的时间间隔与所述等离子体OFF状态的时间间隔相等。
23.根据权利要求21所述的设备,其中,所述室内部的压力为0.1托至10托,并且所述室内部的温度为100摄氏度至400摄氏度。
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