CN109608190A - 一种高介电陶瓷及其制备方法 - Google Patents
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Abstract
本发明公开了一种高介电陶瓷及其制备方法，所述高介电陶瓷的制备方法包括以下步骤：(1)取聚合物溶于溶剂一中制备得到聚合物溶液，将所述聚合物溶液进行静电纺丝；(2)将硅烷偶联剂分散于溶剂二中水解形成硅烷偶联剂溶液，然后加入钛酸锶并超声分散形成悬浮液；(3)将步骤(1)中静电纺丝的产物浸入步骤(2)中的悬浮液中，并热压成型。利用本发明制备方法得到的陶瓷材料中聚合物材料与钛酸锶材料结合能力较强强，克服了单一钛酸锶材料的脆性缺点，制备得到的陶瓷复合材料具有较高的介电常数，在微电子等领域具有较好的应用前景。
Description
技术领域
本发明涉及高介电材料领域，尤其是涉及一种高介电陶瓷及其制备方法。
背景技术
介电陶瓷材料因其优异的介电性能而得到广泛应用，如在微电子领域中电容器件要求材料具有高介电常数，微带天线中介质基板也是十分重要的组成部分。钛酸锶是一种具有钙钛矿结构的中心对称的顺电态介质材料，是一种用于广泛的电子功能陶瓷材料，具有介电常数高、介电损耗低的优点，但是这种铁电体的陶瓷材料容易存在脆性大、不易加工的缺点，需要研发一种能够克服单一铁电体陶瓷材料脆性大的缺点并且具有高介电性能的陶瓷。
发明内容
针对现有技术的不足，本发明所要解决的技术问题是提供一种高介电陶瓷及其制备方法，制备得到的陶瓷材料具有优异的介电性能，具有较好的应用前景。
本发明所采取的技术方案是：
本发明提供了一种高介电陶瓷的制备方法，包括以下步骤：
(1)取聚合物溶于溶剂一中制备得到聚合物溶液，将所述聚合物溶液进行静电纺丝；
(2)将硅烷偶联剂分散于溶剂二中水解形成硅烷偶联剂溶液，然后加入钛酸锶并超声分散形成悬浮液；
(3)将步骤(1)中静电纺丝的产物浸入步骤(2)中的悬浮液中，并热压成型。
在一些优选的实施例中，所述聚合物为聚苯醚树脂、聚乙烯、聚乙烯-四氟乙烯中的至少一种。
在一些优选的实施例中，所述溶剂一为丙酮、四氢呋喃、氯仿中的至少一种。
在一些优选的实施例中，所述硅烷偶联剂为KH-550、KH-580、KH-551中的任一种。
在一些优选的实施例中，步骤(1)中静电纺丝的电压为20～35kv。
在一些优选的实施例中，步骤(2)中硅烷偶联剂：钛酸锶的质量比为1：(10～90)。
在一些优选的实施例中，所述聚合物占所述高介电陶瓷的质量分数为10～30wt％。
本发明还提供一种高介电陶瓷，由上述的高介电陶瓷的制备方法制得。
本发明的有益效果是：
本发明公开了一种高介电陶瓷的制备方法，采用将聚合物进行纺丝并浸入超声分散均匀的钛酸锶悬浮液的方式，提高了钛酸锶材料的均匀分散性，避免了钛酸锶材料的结团现象，聚合物材料与钛酸锶材料结合能力增强，克服了单一钛酸锶材料的脆性缺点，制备得到的陶瓷复合材料具有较高的介电常数，在微电子等领域具有较好的应用前景。
具体实施方式
以下将结合实施例对本发明的构思及产生的技术效果进行清楚、完整地描述，以充分地理解本发明的目的、特征和效果。显然，所描述的实施例只是本发明的一部分实施例，而不是全部实施例，基于本发明的实施例，本领域的技术人员在不付出创造性劳动的前提下所获得的其他实施例，均属于本发明保护的范围。
实施例1
本实施例提供一种高介电陶瓷，通过以下步骤制得：
(1)取聚偏氟乙烯溶于丙酮中制备得到聚偏氟乙烯溶液，在30kv电压条件下进行静电纺丝；
(2)取1质量份的KH-550溶解在乙醇溶液中进行水解，后加入80质量份的钛酸锶，超声分散形成悬浮液；
(3)将步骤(1)中静电纺丝的产物浸入步骤(2)中悬浮液中采用热压方式成型制得高介电陶瓷。
本实施例中聚偏氟乙烯乙烯的添加量占制得的高介电陶瓷材料的21wt％，经测定本实施例中制得的材料介电常数达到15.6。
实施例2
本实施例提供一种高介电陶瓷，通过以下步骤制得：
(1)取聚偏氟乙烯溶于丙酮中制备得到聚偏氟乙烯溶液，在30kv电压条件下进行静电纺丝；
(2)取4质量份的KH-551溶解在乙醇溶液中进行水解，后加入70质量份的钛酸锶，超声分散形成悬浮液；
(3)将步骤(1)中静电纺丝的产物浸入步骤(2)中悬浮液中采用热压方式成型制得高介电陶瓷。
本实施例中聚偏氟乙烯乙烯的添加量占制得的高介电陶瓷材料的30wt％，经测定本实施例中制得的材料介电常数达到21.4。
实施例3
本实施例提供一种高介电陶瓷，通过以下步骤制得：
(1)取聚偏氟乙烯溶于丙酮中制备得到聚偏氟乙烯溶液，在30kv电压条件下进行静电纺丝；
(2)取2质量份的KH-580溶解在乙醇溶液中进行水解，后加入100质量份的钛酸锶，超声分散形成悬浮液；
(3)将步骤(1)中静电纺丝的产物浸入步骤(2)中悬浮液中采用热压方式成型制得高介电陶瓷。
本实施例中聚偏氟乙烯乙烯的添加量占制得的高介电陶瓷材料的12.4wt％，经测定本实施例中制得的材料介电常数达到13.5。
实施例4
本实施例提供一种高介电陶瓷，通过以下步骤制得：
(1)取聚偏氟乙烯溶于丙酮中制备得到聚偏氟乙烯溶液，在20kv电压条件下进行静电纺丝；
(2)取5质量份的KH-580溶解在乙醇溶液中进行水解，后加入70质量份的钛酸锶，超声分散形成悬浮液；
(3)将步骤(1)中静电纺丝的产物浸入步骤(2)中悬浮液中采用热压方式成型制得高介电陶瓷。
本实施例中聚偏氟乙烯乙烯的添加量占制得的高介电陶瓷材料的18wt％，经测定本实施例中制得的材料介电常数达到14.4。
实施例5
本实施例提供一种高介电陶瓷，通过以下步骤制得：
(1)取聚乙烯溶于溶剂中制备得到聚偏氟乙烯溶液，在25kv电压条件下进行静电纺丝；
(2)取10质量份的KH-580溶解在乙醇溶液中进行水解，后加入100质量份的钛酸锶，超声分散形成悬浮液；
(3)将步骤(1)中静电纺丝的产物浸入步骤(2)中悬浮液中采用热压方式成型制得高介电陶瓷。
本实施例中聚偏氟乙烯乙烯的添加量占制得的高介电陶瓷材料的17wt％，经测定本实施例中制得的材料介电常数达到14.8。
实施例6
本实施例提供一种高介电陶瓷，通过以下步骤制得：
(1)取聚乙烯-四氟乙烯溶于溶剂中制备得到聚偏氟乙烯溶液，在20kv电压条件下进行静电纺丝；
(2)取12质量份的KH-580溶解在乙醇溶液中进行水解，后加入360质量份的钛酸锶，超声分散形成悬浮液；
(3)将步骤(1)中静电纺丝的产物浸入步骤(2)中悬浮液中采用热压方式成型制得高介电陶瓷。
本实施例中聚偏氟乙烯乙烯的添加量占制得的高介电陶瓷材料的22wt％，经测定本实施例中制得的材料介电常数达到17.3。
实施例7
本实施例提供一种高介电陶瓷，通过以下步骤制得：
(1)取聚乙烯-四氟乙烯溶于溶剂中制备得到聚偏氟乙烯溶液，在35kv电压条件下进行静电纺丝；
(2)取5质量份的KH-580溶解在乙醇溶液中进行水解，后加入70质量份的钛酸锶，超声分散形成悬浮液；
(3)将步骤(1)中静电纺丝的产物浸入步骤(2)中悬浮液中采用热压方式成型制得高介电陶瓷。
本实施例中聚偏氟乙烯乙烯的添加量占制得的高介电陶瓷材料的28wt％，经测定本实施例中制得的材料介电常数达到19.2。
Claims (8)
1.一种高介电陶瓷的制备方法，其特征在于，包括以下步骤：
(1)取聚合物溶于溶剂一中制备得到聚合物溶液，将所述聚合物溶液进行静电纺丝；
(2)将硅烷偶联剂分散于溶剂二中水解形成硅烷偶联剂溶液，然后加入钛酸锶并超声分散形成悬浮液；
(3)将步骤(1)中静电纺丝的产物浸入步骤(2)中的悬浮液中，并热压成型。
2.根据权利要求1所述的高介电陶瓷的制备方法，其特征在于，所述聚合物为聚偏氟乙烯、聚乙烯、聚乙烯-四氟乙烯中的至少一种。
3.根据权利要求1所述的高介电陶瓷的制备方法，其特征在于，所述溶剂一为丙酮、四氢呋喃、氯仿中的至少一种。
4.根据权利要求1-3任一项所述的高介电陶瓷的制备方法，其特征在于，所述硅烷偶联剂为KH-550、KH-580、KH-551中的任一种。
5.根据权利要求1-3任一项所述的高介电陶瓷的制备方法，其特征在于，步骤(1)中静电纺丝的电压为20～35kv。
6.根据权利要求1-3任一项所述的高介电陶瓷的制备方法，其特征在于，步骤(2)中硅烷偶联剂：钛酸锶的质量比为1：(10～90)。
7.根据权利要求1-3任一项所述的高介电陶瓷的制备方法，其特征在于，所述聚合物占所述高介电陶瓷的质量分数为10～30wt％。
8.一种高介电陶瓷，其特征在于，由权利要求1-7任一项所述的高介电陶瓷的制备方法制得。
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