CN109562407A

CN109562407A - Membrane formation device and film forming method

Info

Publication number: CN109562407A
Application number: CN201780042983.7A
Authority: CN
Inventors: 冈本裕司
Original assignee: Sumitomo Heavy Industries Ltd
Current assignee: Sumitomo Heavy Industries Ltd
Priority date: 2016-08-22
Filing date: 2017-08-09
Publication date: 2019-04-02
Anticipated expiration: 2037-08-09
Also published as: KR102278409B1; KR20190043524A; JP2018030046A; JP6689540B2; WO2018037921A1; CN109562407B; TWI655031B; TW201822895A

Abstract

The present invention provides the membrane formation device and film forming method of a kind of deviation of shape for being able to suppress and being formed by film.Membrane material is coated on substrate and forms film by film forming portion.Photographic device shoots the surface for the substrate for being configured at film forming portion.Control unit controls film forming portion.The pattern data that the flat shape of the film of the corresponding formation is defined is stored in control unit.Before forming film based on the pattern data, control unit makes membrane material spue in a part for being coated with the area inside of membrane material in order to form film and forms evaluation pattern generating.Different processing is executed based on the quality of the surface state of spectral discrimination substrate obtained from being shot with photographic device to evaluation pattern generating, and based on judgement result.

Description

Membrane formation device and film forming method

Technical field

The present invention relates to a kind of membrane formation device and film forming methods.

Background technique

It is being formed for carrying out the transparent conductive film of touch panel to utilize photoetching skill in patterned corrosion-resisting pattern Art or screen printing technology.Using in the method for photoetching technique, being capable of forming the pattern of fine, but at installation cost, waste liquid Reason cost etc. is got higher.Using the method for screen printing technology, from the aspect of installation cost, treatment cost of waste liquor, compared with utilization The method of photoetching technique is more advantageous, but is difficult to form the pattern of high-resolution.It is proposed, which has, forms resist pattern using ink-jet printing technology The technology (patent document 1) of case.

Conventional art document

Patent document

Patent document 1: international publication 2013/089049

Summary of the invention

The invention technical task to be solved

It is known if using ink-jet printing technology multiple substrates formed identical patterns film if film shape can substrate it Between generate deviation.The purpose of the present invention is to provide a kind of are able to suppress to be formed by the membrane formation device of the deviation of shape of film And film forming method.

For solving the means of technical task

A viewpoint according to the present invention, provides a kind of membrane formation device, includes

Film forming portion, is coated on substrate for membrane material and forms film；

Photographic device shoots the surface for the substrate for being configured at the film forming portion；And

Control unit controls the film forming portion,

The pattern data that the flat shape of the film of the corresponding formation is defined is stored in the control unit,

Before forming film based on the pattern data, the control unit control the film forming portion in order to form film and The a part for being coated with the area inside of membrane material forms the evaluation pattern generating being made of material identical with the film that should be formed,

Image obtained from the control unit acquisition shoots the evaluation pattern generating with the photographic device,

The control unit determines the quality of the surface state of the substrate based on acquired described image, and based on judgement As a result different processing is executed.

Another viewpoint according to the present invention provides a kind of film forming method, wherein

It spues the film from ink gun to the inside in the region that should form the film with a certain pattern of substrate surface Membrane material and form evaluation pattern generating,

The quality for the surface state for determining the substrate based on the evaluation pattern generating for being formed in the substrate,

When determining that result is good, the film with a certain pattern is formed on the surface of the substrate,

When determining that result is bad, after the cleaning for carrying out the surface of the substrate, tool is formed on the surface of the substrate There is the film of a certain pattern.

Invention effect

Evaluation pattern generating is formed before forming film and determines the quality of the surface state of substrate, and thus, it is possible to avoid directly existing The case where undesirable substrate of surface state forms film.Thereby, it is possible to inhibit the deviation for the shape for being formed by film.

Detailed description of the invention

Fig. 1 is the general principal view of the membrane formation device based on embodiment.

The top view of etchant resist as etching mask when Fig. 2 is the transparent electrode pattern by touch panel.

Fig. 3 is the flow chart of the film forming method based on embodiment.

Fig. 4 is the top view of the positional relationship between the film and evaluation pattern generating for indicating be formed.

Fig. 5 A is the top view of the normal dot pattern formed by a drop, and Fig. 5 B is bigger than normal dot pattern The top view of dot pattern, Fig. 5 C are the top view of the dot pattern of exudation, and Fig. 5 D is the top view of the dot pattern of flat shape deformation.

Fig. 6 A is to be formed with the cross-sectional view of the substrate of the state (step S4) of evaluation pattern generating in substrate, and Fig. 6 B is in substrate shape At the cross-sectional view of the substrate for the state (step S7) for having etchant resist, Fig. 6 C is by etchant resist as etching mask and to electrically conducting transparent Film be etched after substrate cross-sectional view, Fig. 6 D is cuing open for the substrate for the state for eliminating the etchant resist as etching mask View.

Fig. 7 A and Fig. 7 B are the top view of a part amplification for the etchant resist that will should be formed.

Fig. 8 A is to be formed with the state (step S4) of evaluation pattern generating in substrate and based on the method for another embodiment The cross-sectional view of substrate, Fig. 8 B are to be formed with the cross-sectional view of the substrate of the state (step S7) of etchant resist in substrate.

Specific embodiment

With reference to FIG. 1 to FIG. 7 B, to based on embodiment membrane formation device and film forming method be illustrated.

Fig. 1 is the general principal view of the membrane formation device based on the present embodiment.On base station 20 via mobile mechanism 21 and It is supported with workbench 23.Workbench 23 has the function of the supporting part as surface on it (bearing surface) supporting substrates 50.It moves Motivation structure 21 makes workbench 23 along the moving in two dimensional directions parallel with bearing surface, thus it enables that substrate 50 is moved along two-dimensional directional It is dynamic.Mobile mechanism 21 and workbench 23 are for example able to use XY worktable.In general, the bearing surface of workbench 23 keeps horizontal.

Multiple ink guns 26 and multiple photographic devices 27 are configured in the top of the substrate 50 supported by workbench 23.Ink-jet First 26 and photographic device 27 supported by gate frame 24 by base station 20.Multiple nozzle bores are provided on each ink gun 26.From Drop of the nozzle bore to 50 discharge membrane material of substrate.Ink gun 26, workbench 23 and mobile mechanism 21 form film as in substrate Film forming portion and function.27 pairs of photographic device a part by the substrate 50 that workbench 23 supports are shot, and to Control device (control unit) 30 sends the image data of acquired two dimensional image.

It can be by making the liquid film material for being attached to substrate 50 be solidified to form film.As membrane material, it is able to use light Curable resin, heat-curing resin etc..Being configured in the side of ink gun 26 keeps the membrane material for being attached to substrate 50 cured Light source or heat source.

The movement and nozzle bore from ink gun 26 that control device 30 controls the workbench 23 based on mobile mechanism 21 The discharge of membrane material.Control device 30 includes storage device 31, and the pattern numbers for the film that formed are stored in storage device 31 According to.Pattern data is for example constituted by being configured to rectangular multiple pixels (pixel).Control device 30 is controlled based on pattern data Mobile mechanism 21 and ink gun 26, thus, it is possible to the film of desired pattern is formed in substrate 50.

Various instructions or data are inputted from input unit 35 to control device 30.Input unit 35 for example using keyboard, refer to Show equipment, USB port, communication device etc..Output device (output section) 36 exported based on the instruction for carrying out self-control device 30 with The related various information of the movement of membrane formation device.In output device 36 for example using liquid crystal display, loudspeaker, USB port, Communication device etc..

Fig. 2 is the top view of the etchant resist 53 as etching mask when patterning the transparent electrode film of touch panel.It is logical It crosses etchant resist 53 and the transparent conductive film by formation such as ITO to be etched as etching mask to form transparent electrode.? In Fig. 2, there is dot pattern to the region description for being coated with resist.In membrane formation device shown in FIG. 1, formed in substrate 50 against corrosion Film 53.

Etchant resist 53 includes to be configured to rectangular multiple welding disks 51 and connect multiple welding disks 51 in a column direction Interconnecting piece 52.The interval G for separating two welding disks 51 adjacent to each other in the row direction is the minimum dimension of pattern.

With reference to Fig. 3, the method for using membrane formation device shown in FIG. 1 and forming film is illustrated.

Fig. 3 is the flow chart of the film forming method based on the present embodiment.Firstly, in step sl, film will should be formed Substrate 50 (Fig. 1) is placed on the bearing surface of workbench 23, and passes through the fixed substrates such as vacuum chuck 50.In step s 2, it controls Device 30 processed determines a need for carrying out the contraposition of substrate 50.It determines the need for being aligned by the type of substrate 50, And the information that whether storage is aligned in storage device 31 (Fig. 1).

For example, needing the film for carrying out established pattern Yu newly being formed when being formed with arbitrary graphic pattern on substrate 50 Contraposition.In this case, being positioned to the registration mark for being formed in substrate 50 and forming new film.When shape non-on substrate 50 When at there is any pattern, for example, when in the entire surface in substrate 50 and be not formed should patterned film when, do not need to carry out Contraposition.In this case, forming new film on the basis of the table rest being defined to workbench 23 is denoted as.

When needing to carry out the contraposition of substrate 50, in step s3, the substrate 50 in the bearing surface of workbench 23 is detected Position.Specifically, being shot with photographic device 27 (Fig. 1) to the registration mark being set on substrate 50, and carry out figure As analysis, the position of substrate 50 is thus detected.

After the position for detecting substrate 50, in step s 4, evaluation figure is formed in the inside that should form the region of film Case.When not needing to carry out the contraposition of substrate 50, step S3 is not executed and executes step S4.

With reference to Fig. 4, the processing of step S4 is illustrated.Fig. 4 is the etchant resist 53 and evaluation pattern generating for indicating be formed The top view of positional relationship between 55.Pattern data of the control device 30 based on the etchant resist 53 that should be formed, it is determined that Form at least one position of evaluation pattern generating 55.Evaluation pattern generating 55 is configured at answers when forming etchant resist 53 based on pattern data The inside in the region of the coating membrane material.For example, an evaluation pattern generating 55 is made of separated multiple dot patterns.In Fig. 4, The example that evaluation pattern generating 55 is made of 5 dot patterns for being configured at the inside of a welding disk 51 is shown.It is wrapped in evaluation pattern generating 55 The size of the dot pattern contained is the size that is formed by the drop that spues from a nozzle bore.

After it is determined that forming the position of evaluation pattern generating 55, control device 30 controls ink gun 26 and mobile mechanism 21 (Fig. 1) and substrate 50 formed evaluation pattern generating 55.

It is formed after evaluation pattern generating 55, in step S5 (Fig. 3), control device 30 makes to be formed by the movement of evaluation pattern generating 55 Evaluation pattern generating 55 is shot in the image pickup scope of photographic device 27.Then, in step s 6, it is based on evaluation pattern generating 55 Image and determine the quality of the surface state of substrate 50.Control device 30 based on surface state quality judgement result and hold The different processing of row.

It is illustrated with reference to method of Fig. 5 A~Fig. 5 D to the quality for the surface state for determining substrate 50.Land substrate 50 Surface drop according to surface state and along face Directional Extension, perhaps generate exudation or deformation.In the present embodiment, base The quality of surface state is determined in size, exudation width, the deformation of shape etc. for being formed by evaluation pattern generating 55.For example, institute's shape At the size of evaluation pattern generating 55, exudation width, shape deformation etc. in allowed band predetermined when, by surface state It is determined as " good ", when being detached from allowed band, surface state is determined as " bad ".

Fig. 5 A indicates the top view of the normal dot pattern 56 formed by a drop.The plane of normal dot pattern 56 It is generally shaped like positive round.

Fig. 5 B indicates the top view of a dot pattern 57 of evaluation pattern generating 55 (Fig. 4) example bigger than normal dot pattern 56. When the size of big dot pattern 57 is detached from allowed band, the surface state of substrate 50 is determined as bad by control device 30.Big The size of dot pattern 57 can for example be indicated by the diameter of mutually orthogonal both direction.

Fig. 5 C indicates to produce the top view of the example of exudation 58b in a dot pattern 58 of evaluation pattern generating 55 (Fig. 4).? It can be observed to ooze out 58b around the main body 58a of dot pattern 58.For example, the width (radial size) of exudation 58b, which is greater than, to be allowed When the upper limit of range, the surface state of substrate 50 is determined as bad by control device 30.

Fig. 5 D indicates the top view of the example of the flat shape deformation of a dot pattern 59 of evaluation pattern generating 55 (Fig. 4).For example, Dot pattern 59 is more extended to a direction (left and right directions in Fig. 5 D) than normal dot pattern 56, but in orthogonal to that direction (up and down direction in Fig. 5 D) is shunk.When the deflection of the dot pattern 59 of deformation is detached from allowed band, control device 30 is by substrate 50 surface state is determined as bad.It, can be using the ratio between major diameter and minor axis etc. as the index for indicating deflection.

Above-mentioned allowed band is for example preferably set with the discontiguous condition of etchant resist 53 for meeting the two sides of interval G, Interval G is equivalent to the minimum dimension of pattern shown in Fig. 2.It as an example, can be to be formed by dot pattern 57 (Fig. 5 B), point The upper limit of pattern 58 (Fig. 5 C) and dot pattern 59 (Fig. 5 D) from the overhang of the outer peripheral lines part outstanding of normal dot pattern 56 1/2 mode that value is less than the minimum dimension of pattern sets allowed band.

In addition to this, dot pattern can be formed learning multiple substrates in apparent good order and condition in advance, and is based on the ruler Very little deviation and set allowed band.For example, standard deviation can will be added to the average value for the size for being formed by dot pattern 3 times obtained from size be set as the upper limit value of allowed band.

Substrate 50 surface state quality judgement in, size of the control device 30 based on evaluation pattern generating 55 whether Within the allowable range and whether the deformation of flat shape is allowing whether exudation width in allowed band, around evaluation pattern generating 55 At least one decision condition in range carries out the judgement of quality.

When the surface state of substrate 50 is determined as " good ", in the step s 7, control device 30 is based in substrate 50 Pattern data and form etchant resist 53 (Fig. 2).It is formed after etchant resist 53, moves out substrate from membrane formation device in step s 9 50。

When the surface state of substrate 50 is determined as " bad ", in step s 8, control device 30 is from output device 36 Output indicates the undesirable information of surface state.As the way of output of the information, such as can be using the output based on sound, base In the output of image, based on luminous output etc..

Then, with reference to Fig. 6 A~Fig. 6 D, to the method for the transparent electrode film that film and etching substrate 50 are formed in substrate 50 into Row explanation.Fig. 6 A~Fig. 6 D is equivalent to the cross-sectional view of the position of a pecked line 6-6 of Fig. 4.

Fig. 6 A is to be formed with the cross-sectional view of the substrate 50 of the state (the step S4 of Fig. 3) of evaluation pattern generating 55 in substrate 50.Base Plate 50 includes the glass substrate 50a and transparent conductive film 50b being made of ITO for being formed in its surface.On transparent conductive film 50b Form the evaluation pattern generating 55 being made of erosion resistant.Evaluation pattern generating 55 is made of 5 isolated dot patterns.Each dot pattern is by from spray The droplet formation that one nozzle bore of black head 26 spues.In fig. 6, one is shown corresponding to the discharge of a drop Arrow.

Fig. 6 B is to be formed with the cross-sectional view of the substrate 50 of the state (the step S7 of Fig. 3) of etchant resist 53 in substrate 50.Control Device 30 controls mobile mechanism 21 and ink gun based on the pattern data that the shape for the etchant resist for corresponding to the formation is defined 26, etchant resist 53 is consequently formed.In fig. 6b, one arrow is shown corresponding to the discharge of a drop.Forming evaluation figure The position overlapping coating drop of each dot pattern of case 55, therefore will form on the surface of etchant resist 53 and reflect evaluation pattern generating 55 The protuberance 54 of shape.

As shown in Figure 6 C, etchant resist 53 is used as etching mask and (patterning) is etched to transparent conductive film 50b.It is logical Overetch and remove the transparent conductive film 50b that the region of etchant resist 53 is not formed.

As shown in Figure 6 D, removal is used as the etchant resist 53 of etching mask.In the region for being formed with etchant resist 53 (Fig. 6 C) Remain transparent conductive film 50b.

Then, with reference to Fig. 7 A and Fig. 7 B, the excellent effect of above-described embodiment is illustrated.

Fig. 7 A and Fig. 7 B are the top view of a part amplification for the etchant resist 53 that will should be formed.In Fig. 7 A and Fig. 7 B, The shape 53a as the target for the etchant resist 53 that should be formed is represented by dashed line.

Fig. 7 A indicates the top view that etchant resist 53 is formed by when the wettability of the surface of substrate 50 is higher than standard value.Institute The etchant resist 53 of formation is further expanded than the shape 53a as target.If into the face of membrane material direction be enlarged beyond it is fair Perhaps range then causes adjacent two welding disks 51 on the line direction for being formed by etchant resist 53 to contact with each other.

Fig. 7 B indicates the vertical view that etchant resist 53 is formed by when the surface of substrate 50 is in the state for being easy to produce exudation Figure.Exudation 53b has occurred around the shape 53a as target.Two adjacent welding disks 51 pass through infiltration in the row direction Out part 53b and it is continuous.

If being etched in the state of shown in Fig. 7 A and Fig. 7 B to transparent conductive film 50b (Fig. 6 C), transparent lead is generated A possibility that short trouble of electrolemma 50b, is higher.

In the present embodiment, the quality of the surface state of substrate 50 is detected before forming etchant resist 53, and detects wetability The state of deformation is easy to produce in excessively high state, the state and film shape for being easy to produce exudation.It is supported when by workbench 23 Substrate 50 surface state it is bad when, membrane formation device does not simultaneously go on film and is formed, and notifies surface state to operator Bad situation (the step S8 of Fig. 3).If operator has found the notice, the undesirable base of surface state is moved out from membrane formation device Plate 50 thus allows for handling by the surfaction of surface clean etc..Thereby, it is possible to inhibit the reduction of the yield of product.

In the present embodiment, as shown in Figure 6B, the shape for reflecting evaluation pattern generating 55 (Fig. 6 A) is formed on the surface of etchant resist 53 The protuberance 54 of shape.But the etchant resist 53 is removed after being etched to transparent conductive film 50b.Also, due to will be against corrosion Film 53 is configured at the inside that form the region of etchant resist 53, therefore evaluation pattern generating 55 will not influence the planar shaped of etchant resist 53 Shape.To which evaluation pattern generating 55 will not influence the shape of the transparent conductive film 50b (Fig. 6 D) after etching.

Then, the various modifications example of the present embodiment is illustrated.

In above-described embodiment, isolated multiple dot patterns are utilized as evaluation pattern generating 55 (Fig. 4), but also can use Other patterns.For example, can will have two band patterns at interval identical with interval G to be used as evaluation pattern generating 55, interval G Minimum dimension as etchant resist 53.Whether base can be determined within the allowable range according to the interval for being formed by band pattern The quality of the surface state of plate 50.

In above-described embodiment, evaluation pattern generating 55 (Fig. 4) is formed at least one position of substrate 50.According to the application's The evaluation test of inventor is learnt, even a substrate 50, according to the position in surface, its surface state be would also vary from. The tendency of higher wetability is shown than peripheral portion for example, occasionally there are the inside of substrate 50.

In view of the deviation of the surface state in the surface of a substrate 50, in order to improve the fine or not judgement of surface state Evaluation pattern generating 55 (Fig. 4) is preferably evenly distributed in the surface of substrate 50 by accuracy.For example, along line direction and column direction By the surface of substrate 50 to distinguish at equal intervals, and an evaluation pattern generating 55 is formed in a division region and is preferred.

In above-described embodiment, it is static relative to base station 20 to make ink gun 26, and keeps workbench 23 mobile, thus forms Etchant resist 53, but opposite to that, it is static relative to base station 20 that workbench 23 can be made, and keep ink gun 26 mobile.That is, making One in ink gun 26 and substrate 50 is moved relative to another.

Then, the film forming method based on another embodiment is illustrated with reference to Fig. 8 A and Fig. 8 B.Hereinafter, to Fig. 1 Embodiment difference shown in~Fig. 7 B is illustrated, and is omitted to mutually isostructural explanation.

Fig. 8 A is to be formed with the cross-sectional view of the substrate 50 of the state (the step S4 of Fig. 3) of evaluation pattern generating 55 in substrate 50.It should Process is identical as the process of embodiment shown in Fig. 6 A.

Fig. 8 B is to be formed with the cross-sectional view of the substrate 50 of the state (the step S7 of Fig. 3) of etchant resist 53 in substrate 50.Fig. 8 B Shown in arrow it is corresponding with the position of the drop of discharge etchant resist 53 and show.In the present embodiment, control device 30 (Fig. 1) is made Make amendment pattern data, which is the picture of the pattern data for the etchant resist 53 that should be formed from coating object removal The pixel that evaluation pattern generating is defined is obtained in element.Ink gun 26 is controlled based on the amendment pattern data, is consequently formed anti- Lose film 53.It is such as shown with arrows in the fig. 8b, painting is not overlapped to the position for the dot pattern for being formed with evaluation pattern generating 55 (Fig. 8 A) Cloth drop.

In the present embodiment, coating fluid is not overlapped to the pixel for being formed with evaluation pattern generating 55 (Fig. 8 A) when forming etchant resist 53 Drop.Therefore, the generation of the protuberance 54 shown in the embodiment shown in Fig. 6 B can be prevented.

The embodiment as shown in FIG. 1 to FIG. 7 B will not be at being formed with protuberance 54 when finally removal etchant resist 53 It for problem, but is formed when remaining on the film of final products, embodiment shown in preferably application drawing 8A and Fig. 8 B.

The various embodiments described above are to illustrate, and are also able to carry out the replacement of the part of structure shown in different embodiments certainly Or combination.About the identical function and effect based on identical structure of multiple embodiments, do not mentioned one by one by each embodiment And.In turn, the present invention is not restricted to above-described embodiment.For example, those skilled in the art are able to carry out various changes certainly, change Good and combination etc..

Symbol description

20- base station, 21- mobile mechanism, 23- workbench (supporting part), 24- gate frame, 26- ink gun, 27- camera shooting dress It sets, 30- control device, 31- storage device, 35- input unit, 36- output device, 50- substrate, 50a- glass substrate, 50b- Transparent conductive film, 51- welding disk, 52- interconnecting piece, 53- etchant resist, the target shape of 53a- etchant resist, 53b- exudation, 54- are grand It rises, 55- evaluation pattern generating, the normal dot pattern of 56-, 57- big dot pattern, the dot pattern of 58- exudation, the dot pattern of 58a- exudation Main body, 58b- exudation, 59- deformation dot pattern.

Claims

1. a kind of membrane formation device, includes

Control unit controls the film forming portion,

Before forming film based on the pattern data, the control unit controls the film forming portion and is coated in order to form film A part of the area inside of membrane material forms the evaluation pattern generating being made of material identical with the film that should be formed,

The control unit determines the quality of the surface state of the substrate based on acquired described image, and based on judgement result Execute different processing.

2. membrane formation device according to claim 1, wherein

The film forming portion includes

Supporting part supports the substrate；

Ink gun, to the substrate discharge membrane material supported by the supporting part；And

Mobile mechanism makes one in the substrate supported by the supporting part and the ink gun to move relative to another It is dynamic,

The control unit controls the ink gun and the mobile mechanism.

3. membrane formation device according to claim 1 or 2, wherein

The substrate surface state quality judgement in, size of the control unit based on the evaluation pattern generating whether Within the allowable range and whether the deformation of flat shape is fair whether exudation width in allowed band, around the evaluation pattern generating Perhaps in range at least one decision condition and carry out the judgement of quality.

4. membrane formation device according to claim 1 or 2, also has output section, the output section is according to from the control The instruction output information in portion processed,

When the surface state of the substrate is determined as bad, the control unit notifies the substrate to output section output The bad situation of surface state information,

When the surface state of the substrate is determined as good, the control unit is based on the pattern data and in the substrate Form the film.

5. membrane formation device according to claim 1 or 2, wherein

The drop for being used to form film overlapping is coated on the position for being formed with the evaluation pattern generating by the control unit.

6. membrane formation device according to claim 1 or 2, wherein

When forming the film based on the pattern data, the control unit is based on amendment pattern data and forms the film, should Amendment data are formed with the position of the evaluation pattern generating from pattern data removal to obtain.

7. a kind of film forming method, wherein

It spues the membrane material of the film from ink gun to the inside in the region that should form the film with a certain pattern of substrate surface Expect and form evaluation pattern generating,

When determining that result is bad, after the cleaning for carrying out the surface of the substrate, being formed on the surface of the substrate has institute State the film of a certain pattern.

8. film forming method according to claim 7, wherein

When determining the quality of the surface state of the substrate, the size based on the evaluation pattern generating whether within the allowable range, institute State around evaluation pattern generating exudation width whether within the allowable range and flat shape deformation whether within the allowable range in At least one decision condition and determine quality.