CN109559987B - 等离子体处理方法 - Google Patents

等离子体处理方法 Download PDF

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Publication number
CN109559987B
CN109559987B CN201811118529.8A CN201811118529A CN109559987B CN 109559987 B CN109559987 B CN 109559987B CN 201811118529 A CN201811118529 A CN 201811118529A CN 109559987 B CN109559987 B CN 109559987B
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plasma processing
plasma
gas
workpiece
frequency
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CN109559987A (zh
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横田聪裕
伴瀬贵德
高良穣二
森北信也
奥西直彦
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H10P50/244—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials comprising alternated and repeated etching and passivation steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32669—Particular magnets or magnet arrangements for controlling the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • H10P95/064—Planarisation of inorganic insulating materials involving a dielectric removal step the removal being chemical etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/069—Manufacture or treatment of conductive parts of the interconnections by forming self-aligned vias or self-aligned contact plugs

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
CN201811118529.8A 2017-09-26 2018-09-25 等离子体处理方法 Active CN109559987B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202310085511.7A CN115938906B (zh) 2017-09-26 2018-09-25 等离子体处理装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017-185082 2017-09-26
JP2017185082A JP6937644B2 (ja) 2017-09-26 2017-09-26 プラズマ処理装置及びプラズマ処理方法

Related Child Applications (1)

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CN109559987A CN109559987A (zh) 2019-04-02
CN109559987B true CN109559987B (zh) 2023-03-10

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CN202310085511.7A Active CN115938906B (zh) 2017-09-26 2018-09-25 等离子体处理装置

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US (2) US10546723B2 (https=)
JP (1) JP6937644B2 (https=)
KR (2) KR102718682B1 (https=)
CN (2) CN109559987B (https=)
TW (1) TWI815822B (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6846387B2 (ja) * 2018-06-22 2021-03-24 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP7198609B2 (ja) * 2018-08-21 2023-01-04 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
US12142459B2 (en) * 2020-09-08 2024-11-12 Applied Materials, Inc. Single chamber flowable film formation and treatments
US11887811B2 (en) 2020-09-08 2024-01-30 Applied Materials, Inc. Semiconductor processing chambers for deposition and etch
US11699571B2 (en) 2020-09-08 2023-07-11 Applied Materials, Inc. Semiconductor processing chambers for deposition and etch
JP7606845B2 (ja) * 2020-10-13 2024-12-26 株式会社Kelk 基板処理装置
CN119905397A (zh) * 2023-10-27 2025-04-29 中微半导体设备(上海)股份有限公司 一种等离子体工艺方法及等离子体处理设备

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5880034A (en) * 1997-04-29 1999-03-09 Princeton University Reduction of semiconductor structure damage during reactive ion etching
TW563194B (en) * 2000-09-13 2003-11-21 Hitachi Ltd Plasma processing system and method for manufacturing semiconductor device using the same
CN103247511A (zh) * 2012-02-14 2013-08-14 东京毅力科创株式会社 基板处理装置
JP2014158005A (ja) * 2013-01-21 2014-08-28 Tokyo Electron Ltd 多層膜をエッチングする方法
JP2015173240A (ja) * 2014-02-24 2015-10-01 東京エレクトロン株式会社 エッチング方法

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US6902683B1 (en) * 1996-03-01 2005-06-07 Hitachi, Ltd. Plasma processing apparatus and plasma processing method
JP3572204B2 (ja) * 1998-08-26 2004-09-29 三菱重工業株式会社 プラズマｃｖｄ装置及び薄膜電子デバイス製造方法
WO2003085716A1 (en) * 2002-04-08 2003-10-16 Tokyo Electron Limited Plasma etching method and plasma etching device
US6521082B1 (en) * 2002-04-16 2003-02-18 Applied Materials Inc. Magnetically enhanced plasma apparatus and method with enhanced plasma uniformity and enhanced ion energy control
JP4550507B2 (ja) * 2004-07-26 2010-09-22 株式会社日立ハイテクノロジーズ プラズマ処理装置
CN100539000C (zh) * 2004-12-03 2009-09-09 东京毅力科创株式会社 电容耦合型等离子体处理装置
JP4593413B2 (ja) * 2005-09-15 2010-12-08 株式会社日立ハイテクノロジーズ プラズマ処理方法及び処理装置
JP5116983B2 (ja) * 2006-03-30 2013-01-09 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
DE102006027853B4 (de) * 2006-06-16 2012-06-14 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zum Erzeugen eines Plasmas sowie Verwendung derselben
JP5188496B2 (ja) * 2007-03-22 2013-04-24 パナソニック株式会社 プラズマ処理装置及びプラズマ処理方法
JP2008251866A (ja) * 2007-03-30 2008-10-16 Hitachi High-Technologies Corp プラズマ処理装置
JP2010056114A (ja) * 2008-08-26 2010-03-11 Hitachi High-Technologies Corp プラズマ処理装置
JP6204869B2 (ja) * 2014-04-09 2017-09-27 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP6315809B2 (ja) * 2014-08-28 2018-04-25 東京エレクトロン株式会社 エッチング方法
US10475626B2 (en) * 2015-03-17 2019-11-12 Applied Materials, Inc. Ion-ion plasma atomic layer etch process and reactor
JP6462477B2 (ja) * 2015-04-27 2019-01-30 東京エレクトロン株式会社 被処理体を処理する方法
JP6727068B2 (ja) * 2016-08-08 2020-07-22 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5880034A (en) * 1997-04-29 1999-03-09 Princeton University Reduction of semiconductor structure damage during reactive ion etching
TW563194B (en) * 2000-09-13 2003-11-21 Hitachi Ltd Plasma processing system and method for manufacturing semiconductor device using the same
CN103247511A (zh) * 2012-02-14 2013-08-14 东京毅力科创株式会社 基板处理装置
JP2014158005A (ja) * 2013-01-21 2014-08-28 Tokyo Electron Ltd 多層膜をエッチングする方法
JP2015173240A (ja) * 2014-02-24 2015-10-01 東京エレクトロン株式会社 エッチング方法

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Publication number Publication date
JP6937644B2 (ja) 2021-09-22
KR20240144048A (ko) 2024-10-02
TW201923817A (zh) 2019-06-16
CN115938906A (zh) 2023-04-07
US20190096635A1 (en) 2019-03-28
US20200126759A1 (en) 2020-04-23
US11145490B2 (en) 2021-10-12
KR102718682B1 (ko) 2024-10-16
TWI815822B (zh) 2023-09-21
JP2019061849A (ja) 2019-04-18
US10546723B2 (en) 2020-01-28
KR20190035589A (ko) 2019-04-03
CN109559987A (zh) 2019-04-02
CN115938906B (zh) 2025-09-12

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