CN109537058B - 湿法黑硅制备工艺 - Google Patents
湿法黑硅制备工艺 Download PDFInfo
- Publication number
- CN109537058B CN109537058B CN201811158844.3A CN201811158844A CN109537058B CN 109537058 B CN109537058 B CN 109537058B CN 201811158844 A CN201811158844 A CN 201811158844A CN 109537058 B CN109537058 B CN 109537058B
- Authority
- CN
- China
- Prior art keywords
- solution
- acid
- silicon wafer
- hydrofluoric acid
- water
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910021418 black silicon Inorganic materials 0.000 title claims abstract description 19
- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 54
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 29
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 29
- 239000010703 silicon Substances 0.000 claims abstract description 29
- 239000000243 solution Substances 0.000 claims abstract description 20
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000011259 mixed solution Substances 0.000 claims abstract description 16
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims abstract description 13
- 239000002086 nanomaterial Substances 0.000 claims abstract description 11
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 11
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000002253 acid Substances 0.000 claims abstract description 10
- 238000004140 cleaning Methods 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims abstract description 10
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 9
- 238000006243 chemical reaction Methods 0.000 claims abstract description 8
- 238000001035 drying Methods 0.000 claims abstract description 5
- 229910021426 porous silicon Inorganic materials 0.000 claims abstract description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 54
- 238000005406 washing Methods 0.000 claims description 24
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 18
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 6
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 claims description 6
- 229920000036 polyvinylpyrrolidone Polymers 0.000 claims description 6
- 239000001267 polyvinylpyrrolidone Substances 0.000 claims description 6
- 229920002565 Polyethylene Glycol 400 Polymers 0.000 claims description 4
- 239000012670 alkaline solution Substances 0.000 claims description 4
- JLFNLZLINWHATN-UHFFFAOYSA-N pentaethylene glycol Chemical compound OCCOCCOCCOCCOCCO JLFNLZLINWHATN-UHFFFAOYSA-N 0.000 claims description 4
- 229920000289 Polyquaternium Polymers 0.000 claims description 2
- 230000008569 process Effects 0.000 abstract description 6
- 229910003460 diamond Inorganic materials 0.000 abstract description 5
- 239000010432 diamond Substances 0.000 abstract description 5
- 238000002310 reflectometry Methods 0.000 abstract description 5
- 239000000654 additive Substances 0.000 abstract description 3
- 230000000996 additive effect Effects 0.000 abstract description 3
- 238000003912 environmental pollution Methods 0.000 abstract description 3
- 229910001385 heavy metal Inorganic materials 0.000 abstract description 3
- 150000003863 ammonium salts Chemical group 0.000 description 4
- 230000003321 amplification Effects 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Silicon Compounds (AREA)
- Battery Electrode And Active Subsutance (AREA)
Abstract
本发明涉及一种湿法黑硅制备工艺,包括:用氢氧化钾溶液去除硅片表面损伤层;用含有有机掩膜的A1溶液处理上述抛光硅片两次;用氢氟酸和双氧水以及不含金属的B1混合溶液反应,形成纳米结构;用氢氧化钾溶液清洗,去除上述过程中的残留酸液;用氢氟酸、硝酸以及B2的混合溶液,将步骤4所形成的黑硅纳米结构进行扩大化处理;用氢氧化钾溶液,去除上述步骤反应后形成的多孔硅;用氢氟酸和盐酸的混合溶液清洗硅片;将上述清洗后硅片,进行烘干处理,流入后道工序。本发明解决了多晶金刚线制绒困难的问题;可有效降低硅片表面反射率;可有效提高电池转换效率,增加收益;添加剂成分不含重金属,有效避免环保污染问题。
Description
技术领域
本发明涉及太阳能电池技术领域,尤其是一种湿法黑硅制备工艺。
背景技术
随着电池行业降本增效高速发展,硅片全部转为金刚线切割,但是相对于传统砂线切割,采用金刚线切割硅片表面损伤层少。
传统的多晶制绒均是采用HF/HNO3的各项同性腐蚀,生成凹坑绒面。但是传统的HF/HNO3制绒工艺难以形成绒面,导致反射率较高,电池转换效率偏低;并且工艺中采用的添加剂成分含有重金属,会造成环保污染问题。
发明内容
本发明要解决的技术问题是:提出一种湿法黑硅制备工艺。
本发明所采用的技术方案为:一种湿法黑硅制备工艺,包括以下步骤:
1)将45wt%的氢氧化钠溶液与纯水以体积比1:6-12混合,在温度75-85℃去除硅片表面损伤层,时间200-400S,然后水洗;
2)用A1溶液对上述抛光硅片进行预清洗,温度为温度20-30℃,时间100-200S,然后水洗;
3)重复步骤2);
4)用氢氟酸和双氧水以及不含金属的B1混合溶液反应,其中氢氟酸:双氧水:纯水=1:3-6:2-10;B1溶液为0.5%-4%;温度30-40℃,时间180S-300S,最终形成纳米结构,即黑硅,然后水洗;
5)用45wt%氢氧化钾溶液与纯水以体积比例1:40-80混合,温度20-30℃,清洗上述酸液,时间60-150S;
6)将49%wt的氢氟酸与纯水以体积比例1:40-80混合,温度20-30℃,时间60-150S;
7)将步骤4)所形成的黑硅纳米结构进行扩大化处理;然后水洗;
8)用碱性溶液在温度20-30℃下去除上述步骤反应后形成的多孔硅,时间100-200S,然后水洗;
9)用酸性清洗硅片,温度20-30℃,时间100-300S,然后水洗;
10)将上述清洗后硅片,进行烘干处理,流入后道工序。
进一步的说,本发明所述的步骤2)中A1溶液由0.5%-5%的聚乙烯吡咯烷酮,0.5%-5%的聚季铵盐,2%-10%柠檬酸混合制成。
再进一步的说,本发明所述的步骤4)中,B1溶液由0.5%-5%PEG400,1%-10%PVA混合制成。
再进一步的说,本发明所述的步骤7)中,用49%wt氢氟酸、66%wt硝酸的混合溶液,将步骤4)所形成的黑硅纳米结构进行扩大化处理;氢氟酸:硝酸:纯水=1:3-5:1-3,温度6-12℃,时间80-150S。
再进一步的说,本发明所述的步骤8)中的碱性溶液为49%wt氢氧化钾溶液,占纯水比例3%-5%。
再进一步的说,本发明所述的步骤9)中酸性溶液为49%wt氢氟酸和36%wt盐酸的混合溶液,与纯水比例1:1-3:1-5。
本发明的有益效果是:
1、解决了多晶金刚线制绒困难的问题;
2、可有效降低硅片表面反射率;
3、可有效提高电池转换效率,增加收益;
4、添加剂成分不含重金属,有效避免环保污染问题。
附图说明
图1是本发明的工艺流程图;
图2为黑硅反射率对比金刚线曲线图;
图3为黑硅绒面SEM图。
具体实施方式
现在结合附图和优选实施例对本发明作进一步详细的说明。这些附图均为简化的示意图,仅以示意方式说明本发明的基本结构,因此其仅显示与本发明有关的构成。
实施例1
1、用45wt%氢氧化钾溶液,与纯水体积比例1:6-12,温度75-85℃去除硅片表面损伤层,时间200-400S,然后纯水清洗90S;
2、用0.5%-2%A1溶液处理上述抛光硅片,A1主要成分0.5%-5%聚乙烯吡咯烷酮,0.5%-5%聚季铵盐,2%-10%柠檬酸等,温度20-30℃,时间100-200S,然后水洗90S;
3、用0.5%-2%A1溶液处理上述抛光硅片,A1主要成分0.5%-5%聚乙烯吡咯烷酮,0.5%-5%聚季铵盐,2%-10%柠檬酸等,温度20-30℃,时间100-200S,然后水洗90S;
4、用氢氟酸和双氧水以及不含金属的B1混合溶液反应,氢氟酸:双氧水:纯水=1:3-6:2-10,B1占比0.5%-4%,B1主要成分0.5%-5%PEG400,1%-10%PVA,温度30-40℃,时间180S-300S,最终形成纳米结构,然后水洗90S;
5、用45wt%氢氧化钾溶液,与纯水体积比例1:40-80,温度20-30℃,清洗上述酸液,时间60-150S;
6、49%wt氢氟酸,与纯水比例1:40-80,温度20-30℃,时间60-150S;
7、用49%wt氢氟酸、66%wt硝酸的混合溶液,将步骤4所形成的黑硅纳米结构进行扩大化处理,更容易后道工艺匹配,氢氟酸:硝酸:纯水=1:3-5:1-3,温度6-12℃,时间80-150S,然后水洗90S;
8、用49%wt氢氧化钾溶液,占纯水比例3%-5%,温度20-30℃,时间100-200S,去除上述步骤反应后形成的多孔硅,然后水洗90S;
9、用49%wt氢氟酸和36%wt盐酸的混合溶液,与纯水比例1:1-3:1-5,温度20-30℃,时间100-300S,清洗硅片,然后水洗120S;
10、将上述清洗后硅片,进行烘干处理,烘干时间600S,硅片反射率10%-20%。
实施例2
1、用45wt%氢氧化钾溶液,与纯水体积比例1:6-12,温度75-85℃去除硅片表面损伤层,时间200-400S,然后纯水清洗90S;
2、用0.5%-2%A1溶液处理上述抛光硅片,A1主要成分0.5%-5%聚乙烯吡咯烷酮,0.5%-5%聚季铵盐,2%-10%柠檬酸等,温度20-30℃,时间100-200S,然后水洗90S;
3、用0.5%-2%A1溶液处理上述抛光硅片,A1主要成分0.5%-5%聚乙烯吡咯烷酮,0.5%-5%聚季铵盐,2%-10%柠檬酸等,温度20-30℃,时间100-200S,然后水洗90S;
4、用氢氟酸和双氧水以及不含金属的B1混合溶液反应,氢氟酸:双氧水:纯水=1:3-6:2-10,B1占比0.5%-4%,B1主要成分0.5%-5%PEG400,1%-10%PVA,温度30-40℃,时间180S-300S,最终形成纳米结构,然后水洗90S;
5、用45wt%氢氧化钾溶液,与纯水体积比例1:40-80,温度20-30℃,清洗上述酸液,时间60-150S;
6、49%wt氢氟酸,与纯水比例1∶40-80,温度20-30℃,时间60-150S;
7、用49%wt氢氟酸、66%wt硝酸的混合溶液,将步骤4所形成的黑硅纳米结构进行扩大化处理,更容易后道工艺匹配,氢氟酸∶硝酸∶纯水=1∶3-5∶1-3,温度6-12℃,时间80-150S,然后水洗90S;
8、用49%wt氢氧化钾溶液,占纯水比例3%-5%,温度20-30℃,时间100-200S,去除上述步骤反应后形成的多孔硅,然后水洗90S;
9、用49%wt氢氟酸和36%wt盐酸的混合溶液,与纯水比例1∶1-3∶1-5,温度20-30℃,时间100-300S,清洗硅片,然后水洗120S;
10、将上述清洗后硅片,进行烘干处理,烘干时间600S,硅片反射率10%-20%。
电池效率对比如下所示:
comment | output | Voc | Isc | FF | Eff |
baseline | 1449 | 0.6405 | 8.872 | 81.69 | 18.896% |
实施例1 | 1093 | 0.6404 | 9.052 | 81.21 | 19.162% |
实施例2 | 1638 | 0.6372 | 9.059 | 81.70 | 19.195% |
以上说明书中描述的只是本发明的具体实施方式,各种举例说明不对本发明的实质内容构成限制,所属技术领域的普通技术人员在阅读了说明书后可以对以前所述的具体实施方式做修改或变形,而不背离本发明的实质和范围。
Claims (3)
1.一种湿法黑硅制备工艺,其特征在于包括以下步骤:
1)将45wt%的氢氧化钠溶液与纯水以体积比1:6-12混合,在温度75-85℃去除硅片表面损伤层,时间200-400S,然后水洗;
2)用A1溶液对上述抛光硅片进行预清洗,温度为20-30℃,时间100-200S,然后水洗;A1溶液由0.5%-5%的聚乙烯吡咯烷酮,0.5%-5%的聚季铵盐,2%-10%柠檬酸混合制成;
3)重复步骤2);
4)用氢氟酸和双氧水以及不含金属的B1混合溶液反应,其中氢氟酸:双氧水:纯水=1:3-6:2-10;B1溶液为0.5%-4%;温度30-40℃,时间180S-300S,最终形成纳米结构,即黑硅,然后水洗;其中,B1溶液由0.5%-5%PEG400,1%-10%PVA混合制成;
5)用45wt%氢氧化钾溶液与纯水以体积比例1:40-80混合,温度20-30℃,清洗上述酸液,时间60-150S;
6)将49%wt的氢氟酸与纯水以体积比例1:40-80混合,温度20-30℃,时间60-150S;
7)用49%wt氢氟酸、66%wt硝酸的混合溶液,将步骤4)所形成的黑硅纳米结构进行扩大化处理,然后水洗,氢氟酸:硝酸:纯水=1:3-5:1-3,温度6-12℃,时间80-150S;
8)用碱性溶液在温度20-30℃下去除上述步骤反应后形成的多孔硅,时间100-200S,然后水洗;
9)用酸性清洗硅片,温度20-30℃,时间100-300S,然后水洗;
10)将上述清洗后硅片,进行烘干处理,流入后道工序。
2.如权利要求1所述的湿法黑硅制备工艺,其特征在于:所述的步骤8) 中的碱性溶液为49%wt氢氧化钾溶液,占纯水比例3%-5%。
3.如权利要求1所述的湿法黑硅制备工艺,其特征在于:所述的步骤9)中酸性溶液为49%wt氢氟酸和36%wt盐酸的混合溶液,与纯水比例1:1-3:1-5。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811158844.3A CN109537058B (zh) | 2018-09-30 | 2018-09-30 | 湿法黑硅制备工艺 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811158844.3A CN109537058B (zh) | 2018-09-30 | 2018-09-30 | 湿法黑硅制备工艺 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN109537058A CN109537058A (zh) | 2019-03-29 |
CN109537058B true CN109537058B (zh) | 2021-01-05 |
Family
ID=65843447
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201811158844.3A Active CN109537058B (zh) | 2018-09-30 | 2018-09-30 | 湿法黑硅制备工艺 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN109537058B (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110165018A (zh) * | 2019-04-18 | 2019-08-23 | 横店集团东磁股份有限公司 | 一种下降漏电提升效率的多晶清洗工艺 |
CN111128684A (zh) * | 2019-12-30 | 2020-05-08 | 南京纳鑫新材料有限公司 | 一种多晶湿法黑硅清洗工艺 |
CN113122148A (zh) * | 2021-04-07 | 2021-07-16 | 云南合义德新材料有限公司 | 一种晶体硅碱抛光添加剂及使用方法 |
CN113380605A (zh) * | 2021-06-04 | 2021-09-10 | 中国电子科技集团公司第四十四研究所 | 一种基于机械研磨辅助腐蚀的黑硅制作方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103132079A (zh) * | 2013-02-07 | 2013-06-05 | 睿纳能源科技(上海)有限公司 | 一种用于金刚线切割多晶硅片酸制绒的添加剂及使用方法 |
CN105810761A (zh) * | 2016-04-29 | 2016-07-27 | 南京工业大学 | 一种金刚线切割多晶硅片的制绒方法 |
CN108505121A (zh) * | 2018-03-15 | 2018-09-07 | 张家港国龙光伏科技有限公司 | 一种改善多晶硅片出绒率的制绒方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103409808B (zh) * | 2013-09-04 | 2015-10-21 | 常州时创能源科技有限公司 | 多晶硅片制绒添加剂及其使用方法 |
-
2018
- 2018-09-30 CN CN201811158844.3A patent/CN109537058B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103132079A (zh) * | 2013-02-07 | 2013-06-05 | 睿纳能源科技(上海)有限公司 | 一种用于金刚线切割多晶硅片酸制绒的添加剂及使用方法 |
CN105810761A (zh) * | 2016-04-29 | 2016-07-27 | 南京工业大学 | 一种金刚线切割多晶硅片的制绒方法 |
CN108505121A (zh) * | 2018-03-15 | 2018-09-07 | 张家港国龙光伏科技有限公司 | 一种改善多晶硅片出绒率的制绒方法 |
Also Published As
Publication number | Publication date |
---|---|
CN109537058A (zh) | 2019-03-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN109537058B (zh) | 湿法黑硅制备工艺 | |
JP6392866B2 (ja) | 結晶シリコン太陽電池の表面テクスチャ構造及びその製造方法 | |
WO2021213168A1 (zh) | 一种具有圆角金字塔结构的单晶硅片及制备方法 | |
CN102299207B (zh) | 用于太阳电池的多孔金字塔型硅表面陷光结构制备方法 | |
CN101937946B (zh) | 一种太阳电池硅片的表面织构方法 | |
CN105576080A (zh) | 一种金刚线切割多晶硅片的单面制绒方法及单面制绒的金刚线切割多晶硅片 | |
WO2021136196A1 (zh) | 一种具有金字塔叠加结构的单晶硅片 | |
CN102343352B (zh) | 一种太阳能硅片的回收方法 | |
JP2018006744A (ja) | 結晶シリコン太陽電池のテクスチャー構造およびその調製方法 | |
CN107338480A (zh) | 一种单晶硅硅片制绒方法及其制绒添加剂 | |
CN103441182B (zh) | 太阳能电池的绒面处理方法及太阳能电池 | |
CN110922970A (zh) | 一种perc电池背抛光添加剂及工艺 | |
CN101935884A (zh) | 一种制备绒面多晶硅片的方法 | |
CN113823709A (zh) | 一种太阳能电池的制绒清洗方法 | |
CN111403561A (zh) | 一种硅片制绒方法 | |
CN111455467A (zh) | 单晶硅制绒添加剂、制绒方法以及绒面单晶硅片制备方法 | |
CN104966762A (zh) | 晶体硅太阳能电池绒面结构的制备方法 | |
CN110993724A (zh) | 一种异质结太阳能电池的制绒清洗方法 | |
CN105133038B (zh) | 具有高效纳米绒面结构的多晶硅的制备方法及其应用 | |
CN107393818A (zh) | 一种多晶硅太阳能电池的酸碱二次制绒方法及其多晶硅 | |
CN114361272A (zh) | 一种太阳能电池片制绒后酸洗添加剂及使用方法 | |
CN110518075B (zh) | 一种黑硅钝化膜、其制备方法及应用 | |
CN104393094B (zh) | 一种用于hit电池的n型硅片清洗制绒方法 | |
CN104630900A (zh) | 一种单晶硅太阳能电池表面制绒处理方法 | |
CN204167329U (zh) | 冶金多晶硅太阳能电池片及太阳能电池板 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |