CN109536923B - 多托盘压载抽蒸气系统 - Google Patents

多托盘压载抽蒸气系统 Download PDF

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Publication number
CN109536923B
CN109536923B CN201811122857.5A CN201811122857A CN109536923B CN 109536923 B CN109536923 B CN 109536923B CN 201811122857 A CN201811122857 A CN 201811122857A CN 109536923 B CN109536923 B CN 109536923B
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trays
tray
liquid precursor
liquid
openings
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Chinese (zh)
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CN109536923A (zh
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拉梅什·钱德拉赛卡兰
戴维斯·威尔曼
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Lam Research Corp
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Lam Research Corp
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
CN201811122857.5A 2013-11-25 2014-11-24 多托盘压载抽蒸气系统 Active CN109536923B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/089,009 US9334566B2 (en) 2013-11-25 2013-11-25 Multi-tray ballast vapor draw systems
US14/089,009 2013-11-25
CN201410680419.6A CN104651806B (zh) 2013-11-25 2014-11-24 多托盘压载抽蒸气系统

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201410680419.6A Division CN104651806B (zh) 2013-11-25 2014-11-24 多托盘压载抽蒸气系统

Publications (2)

Publication Number Publication Date
CN109536923A CN109536923A (zh) 2019-03-29
CN109536923B true CN109536923B (zh) 2021-08-06

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CN201811122857.5A Active CN109536923B (zh) 2013-11-25 2014-11-24 多托盘压载抽蒸气系统
CN201410680419.6A Active CN104651806B (zh) 2013-11-25 2014-11-24 多托盘压载抽蒸气系统

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US (1) US9334566B2 (https=)
JP (1) JP6945269B2 (https=)
KR (1) KR102369254B1 (https=)
CN (2) CN109536923B (https=)
TW (2) TWI700120B (https=)

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US10876205B2 (en) 2016-09-30 2020-12-29 Asm Ip Holding B.V. Reactant vaporizer and related systems and methods
US11926894B2 (en) * 2016-09-30 2024-03-12 Asm Ip Holding B.V. Reactant vaporizer and related systems and methods
CN118360588A (zh) 2018-07-05 2024-07-19 朗姆研究公司 衬底处理系统中的衬底支撑件的动态温度控制
US11183400B2 (en) 2018-08-08 2021-11-23 Lam Research Corporation Progressive heating of components of substrate processing systems using TCR element-based heaters
KR20200020608A (ko) 2018-08-16 2020-02-26 에이에스엠 아이피 홀딩 비.브이. 고체 소스 승화기
JP7240993B2 (ja) * 2019-08-27 2023-03-16 東京エレクトロン株式会社 原料ガス供給システム及び原料ガス供給方法
US11624113B2 (en) 2019-09-13 2023-04-11 Asm Ip Holding B.V. Heating zone separation for reactant evaporation system
US12571096B2 (en) 2019-09-18 2026-03-10 Tokyo Electron Limited Raw material gas supply system and raw material gas supply method
US12540390B2 (en) * 2020-03-17 2026-02-03 Tokyo Electron Limited Raw material supply system
JP7519829B2 (ja) * 2020-03-17 2024-07-22 東京エレクトロン株式会社 原料供給システム及び原料供給方法
CN115867999A (zh) 2020-06-06 2023-03-28 朗姆研究公司 用于半导体处理的可移除喷头面板
CN115917039A (zh) * 2020-07-29 2023-04-04 朗姆研究公司 使用起泡器的浓度控制
US20230374657A1 (en) * 2020-10-09 2023-11-23 Lam Research Corporation Vapor delivery device
CN114277358B (zh) * 2021-11-12 2023-10-27 北京北方华创微电子装备有限公司 一种液态源瓶及半导体工艺设备
US20240133033A1 (en) * 2021-12-08 2024-04-25 Asm Ip Holding B.V. Reactant delivery system and reactor system including same
US20260098337A1 (en) * 2024-10-07 2026-04-09 L'Air Liquide, Société Anonyme pour I'Etude et I'Exploitation des Procédés Georges Claude Metal chloride precursors and deposition of metal-containing films

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US1583255A (en) * 1924-05-21 1926-05-04 Moore Willis Luther Humidifying radiator
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CN101542015A (zh) * 2006-08-31 2009-09-23 高级技术材料公司 利用受控的固体形态学的流体的基于固体前体的传送

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US366168A (en) * 1887-07-05 Gas-generating machine
US1583255A (en) * 1924-05-21 1926-05-04 Moore Willis Luther Humidifying radiator
CN1317056A (zh) * 1998-07-21 2001-10-10 应用材料有限公司 Cvd装置
JP2007211346A (ja) * 2006-02-10 2007-08-23 Tokyo Electron Ltd 膜前駆体蒸発システムにおいて使用される膜前駆体のトレーおよびその使用方法
CN101542015A (zh) * 2006-08-31 2009-09-23 高级技术材料公司 利用受控的固体形态学的流体的基于固体前体的传送

Also Published As

Publication number Publication date
JP2015110837A (ja) 2015-06-18
CN104651806B (zh) 2018-11-02
KR102369254B1 (ko) 2022-02-28
CN109536923A (zh) 2019-03-29
US20150145154A1 (en) 2015-05-28
TW201532665A (zh) 2015-09-01
TWI700120B (zh) 2020-08-01
US9334566B2 (en) 2016-05-10
CN104651806A (zh) 2015-05-27
JP6945269B2 (ja) 2021-10-06
TWI654025B (zh) 2019-03-21
KR20150060566A (ko) 2015-06-03
TW201919755A (zh) 2019-06-01

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