JP6945269B2 - マルチトレイバラスト蒸気引き込みシステム - Google Patents

マルチトレイバラスト蒸気引き込みシステム Download PDF

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Publication number
JP6945269B2
JP6945269B2 JP2014231137A JP2014231137A JP6945269B2 JP 6945269 B2 JP6945269 B2 JP 6945269B2 JP 2014231137 A JP2014231137 A JP 2014231137A JP 2014231137 A JP2014231137 A JP 2014231137A JP 6945269 B2 JP6945269 B2 JP 6945269B2
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Japan
Prior art keywords
trays
support member
liquid precursor
liquid
precursor
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Japanese (ja)
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JP2015110837A5 (https=
JP2015110837A (ja
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ラメッシュ・チャンドラセカーラン
デイビス・ウェイマン
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Lam Research Corp
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Lam Research Corp
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
JP2014231137A 2013-11-25 2014-11-14 マルチトレイバラスト蒸気引き込みシステム Active JP6945269B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/089,009 US9334566B2 (en) 2013-11-25 2013-11-25 Multi-tray ballast vapor draw systems
US14/089,009 2013-11-25

Publications (3)

Publication Number Publication Date
JP2015110837A JP2015110837A (ja) 2015-06-18
JP2015110837A5 JP2015110837A5 (https=) 2017-12-14
JP6945269B2 true JP6945269B2 (ja) 2021-10-06

Family

ID=53181978

Family Applications (1)

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JP2014231137A Active JP6945269B2 (ja) 2013-11-25 2014-11-14 マルチトレイバラスト蒸気引き込みシステム

Country Status (5)

Country Link
US (1) US9334566B2 (https=)
JP (1) JP6945269B2 (https=)
KR (1) KR102369254B1 (https=)
CN (2) CN109536923B (https=)
TW (2) TWI700120B (https=)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10876205B2 (en) 2016-09-30 2020-12-29 Asm Ip Holding B.V. Reactant vaporizer and related systems and methods
US11926894B2 (en) * 2016-09-30 2024-03-12 Asm Ip Holding B.V. Reactant vaporizer and related systems and methods
CN118360588A (zh) 2018-07-05 2024-07-19 朗姆研究公司 衬底处理系统中的衬底支撑件的动态温度控制
US11183400B2 (en) 2018-08-08 2021-11-23 Lam Research Corporation Progressive heating of components of substrate processing systems using TCR element-based heaters
KR20200020608A (ko) 2018-08-16 2020-02-26 에이에스엠 아이피 홀딩 비.브이. 고체 소스 승화기
JP7240993B2 (ja) * 2019-08-27 2023-03-16 東京エレクトロン株式会社 原料ガス供給システム及び原料ガス供給方法
US11624113B2 (en) 2019-09-13 2023-04-11 Asm Ip Holding B.V. Heating zone separation for reactant evaporation system
US12571096B2 (en) 2019-09-18 2026-03-10 Tokyo Electron Limited Raw material gas supply system and raw material gas supply method
US12540390B2 (en) * 2020-03-17 2026-02-03 Tokyo Electron Limited Raw material supply system
JP7519829B2 (ja) * 2020-03-17 2024-07-22 東京エレクトロン株式会社 原料供給システム及び原料供給方法
CN115867999A (zh) 2020-06-06 2023-03-28 朗姆研究公司 用于半导体处理的可移除喷头面板
CN115917039A (zh) * 2020-07-29 2023-04-04 朗姆研究公司 使用起泡器的浓度控制
US20230374657A1 (en) * 2020-10-09 2023-11-23 Lam Research Corporation Vapor delivery device
CN114277358B (zh) * 2021-11-12 2023-10-27 北京北方华创微电子装备有限公司 一种液态源瓶及半导体工艺设备
US20240133033A1 (en) * 2021-12-08 2024-04-25 Asm Ip Holding B.V. Reactant delivery system and reactor system including same
US20260098337A1 (en) * 2024-10-07 2026-04-09 L'Air Liquide, Société Anonyme pour I'Etude et I'Exploitation des Procédés Georges Claude Metal chloride precursors and deposition of metal-containing films

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US366168A (en) * 1887-07-05 Gas-generating machine
US550317A (en) * 1895-11-26 Carburetor
US55950A (en) * 1866-06-26 Improved apparatus for carbureting air
US24200A (en) * 1859-05-31 hall covel
US245443A (en) * 1881-08-09 Carburetor
US409570A (en) * 1889-08-20 Carburetor
US1301610A (en) * 1917-02-15 1919-04-22 Oliver L Scott Carbureter.
US1545755A (en) * 1922-12-21 1925-07-14 Kent Ltd G Apparatus for making illuminating gas
US1583255A (en) * 1924-05-21 1926-05-04 Moore Willis Luther Humidifying radiator
US1985689A (en) * 1931-03-06 1934-12-25 Emerson Electric Mfg Co Humidifier
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JPH08279497A (ja) * 1995-04-07 1996-10-22 Hitachi Ltd 半導体製造装置および半導体装置
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KR20010047128A (ko) 1999-11-18 2001-06-15 이경수 액체원료 기화방법 및 그에 사용되는 장치
FR2829037B1 (fr) * 2001-08-28 2003-12-19 Joint Industrial Processors For Electronics Dispositif a enceintes multiples pour l'evaporation fractionnee et la separation d'une solution
US7300038B2 (en) 2002-07-23 2007-11-27 Advanced Technology Materials, Inc. Method and apparatus to help promote contact of gas with vaporized material
US6921062B2 (en) 2002-07-23 2005-07-26 Advanced Technology Materials, Inc. Vaporizer delivery ampoule
US7484315B2 (en) * 2004-11-29 2009-02-03 Tokyo Electron Limited Replaceable precursor tray for use in a multi-tray solid precursor delivery system
US20060185597A1 (en) * 2004-11-29 2006-08-24 Kenji Suzuki Film precursor evaporation system and method of using
JP4607637B2 (ja) * 2005-03-28 2011-01-05 東京エレクトロン株式会社 シリコン窒化膜の形成方法、シリコン窒化膜の形成装置及びプログラム
JP4960720B2 (ja) * 2006-02-10 2012-06-27 東京エレクトロン株式会社 膜前駆体蒸発システムにおいて使用される膜前駆体のトレーおよびその使用方法
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JP5933372B2 (ja) * 2012-07-02 2016-06-08 東京エレクトロン株式会社 原料容器および原料容器の使用方法

Also Published As

Publication number Publication date
JP2015110837A (ja) 2015-06-18
CN104651806B (zh) 2018-11-02
KR102369254B1 (ko) 2022-02-28
CN109536923A (zh) 2019-03-29
US20150145154A1 (en) 2015-05-28
TW201532665A (zh) 2015-09-01
TWI700120B (zh) 2020-08-01
US9334566B2 (en) 2016-05-10
CN104651806A (zh) 2015-05-27
CN109536923B (zh) 2021-08-06
TWI654025B (zh) 2019-03-21
KR20150060566A (ko) 2015-06-03
TW201919755A (zh) 2019-06-01

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