KR102369254B1 - 다중―트레이 발라스트 기체 흡인 시스템들 - Google Patents

다중―트레이 발라스트 기체 흡인 시스템들 Download PDF

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KR102369254B1
KR102369254B1 KR1020140164246A KR20140164246A KR102369254B1 KR 102369254 B1 KR102369254 B1 KR 102369254B1 KR 1020140164246 A KR1020140164246 A KR 1020140164246A KR 20140164246 A KR20140164246 A KR 20140164246A KR 102369254 B1 KR102369254 B1 KR 102369254B1
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South Korea
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trays
liquid precursor
conduit
precursor
carrier gas
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Korean (ko)
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KR20150060566A (ko
Inventor
라메쉬 찬드라세카란
다비스 웨이만
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램 리써치 코포레이션
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020140164246A 2013-11-25 2014-11-24 다중―트레이 발라스트 기체 흡인 시스템들 Active KR102369254B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/089,009 US9334566B2 (en) 2013-11-25 2013-11-25 Multi-tray ballast vapor draw systems
US14/089,009 2013-11-25

Publications (2)

Publication Number Publication Date
KR20150060566A KR20150060566A (ko) 2015-06-03
KR102369254B1 true KR102369254B1 (ko) 2022-02-28

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KR1020140164246A Active KR102369254B1 (ko) 2013-11-25 2014-11-24 다중―트레이 발라스트 기체 흡인 시스템들

Country Status (5)

Country Link
US (1) US9334566B2 (https=)
JP (1) JP6945269B2 (https=)
KR (1) KR102369254B1 (https=)
CN (2) CN109536923B (https=)
TW (2) TWI700120B (https=)

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US10876205B2 (en) 2016-09-30 2020-12-29 Asm Ip Holding B.V. Reactant vaporizer and related systems and methods
US11926894B2 (en) * 2016-09-30 2024-03-12 Asm Ip Holding B.V. Reactant vaporizer and related systems and methods
CN118360588A (zh) 2018-07-05 2024-07-19 朗姆研究公司 衬底处理系统中的衬底支撑件的动态温度控制
US11183400B2 (en) 2018-08-08 2021-11-23 Lam Research Corporation Progressive heating of components of substrate processing systems using TCR element-based heaters
KR20200020608A (ko) 2018-08-16 2020-02-26 에이에스엠 아이피 홀딩 비.브이. 고체 소스 승화기
JP7240993B2 (ja) * 2019-08-27 2023-03-16 東京エレクトロン株式会社 原料ガス供給システム及び原料ガス供給方法
US11624113B2 (en) 2019-09-13 2023-04-11 Asm Ip Holding B.V. Heating zone separation for reactant evaporation system
US12571096B2 (en) 2019-09-18 2026-03-10 Tokyo Electron Limited Raw material gas supply system and raw material gas supply method
US12540390B2 (en) * 2020-03-17 2026-02-03 Tokyo Electron Limited Raw material supply system
JP7519829B2 (ja) * 2020-03-17 2024-07-22 東京エレクトロン株式会社 原料供給システム及び原料供給方法
CN115867999A (zh) 2020-06-06 2023-03-28 朗姆研究公司 用于半导体处理的可移除喷头面板
CN115917039A (zh) * 2020-07-29 2023-04-04 朗姆研究公司 使用起泡器的浓度控制
US20230374657A1 (en) * 2020-10-09 2023-11-23 Lam Research Corporation Vapor delivery device
CN114277358B (zh) * 2021-11-12 2023-10-27 北京北方华创微电子装备有限公司 一种液态源瓶及半导体工艺设备
US20240133033A1 (en) * 2021-12-08 2024-04-25 Asm Ip Holding B.V. Reactant delivery system and reactor system including same
US20260098337A1 (en) * 2024-10-07 2026-04-09 L'Air Liquide, Société Anonyme pour I'Etude et I'Exploitation des Procédés Georges Claude Metal chloride precursors and deposition of metal-containing films

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JP2002521566A (ja) * 1998-07-21 2002-07-16 アプライド マテリアルズ インコーポレイテッド Ｃｖｄ装置
JP2007211346A (ja) * 2006-02-10 2007-08-23 Tokyo Electron Ltd 膜前駆体蒸発システムにおいて使用される膜前駆体のトレーおよびその使用方法

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US55950A (en) * 1866-06-26 Improved apparatus for carbureting air
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JPH08279497A (ja) * 1995-04-07 1996-10-22 Hitachi Ltd 半導体製造装置および半導体装置
KR20010047128A (ko) 1999-11-18 2001-06-15 이경수 액체원료 기화방법 및 그에 사용되는 장치
FR2829037B1 (fr) * 2001-08-28 2003-12-19 Joint Industrial Processors For Electronics Dispositif a enceintes multiples pour l'evaporation fractionnee et la separation d'une solution
US7300038B2 (en) 2002-07-23 2007-11-27 Advanced Technology Materials, Inc. Method and apparatus to help promote contact of gas with vaporized material
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US7484315B2 (en) * 2004-11-29 2009-02-03 Tokyo Electron Limited Replaceable precursor tray for use in a multi-tray solid precursor delivery system
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JP2002521566A (ja) * 1998-07-21 2002-07-16 アプライド マテリアルズ インコーポレイテッド Ｃｖｄ装置
JP2007211346A (ja) * 2006-02-10 2007-08-23 Tokyo Electron Ltd 膜前駆体蒸発システムにおいて使用される膜前駆体のトレーおよびその使用方法

Also Published As

Publication number Publication date
JP2015110837A (ja) 2015-06-18
CN104651806B (zh) 2018-11-02
CN109536923A (zh) 2019-03-29
US20150145154A1 (en) 2015-05-28
TW201532665A (zh) 2015-09-01
TWI700120B (zh) 2020-08-01
US9334566B2 (en) 2016-05-10
CN104651806A (zh) 2015-05-27
JP6945269B2 (ja) 2021-10-06
CN109536923B (zh) 2021-08-06
TWI654025B (zh) 2019-03-21
KR20150060566A (ko) 2015-06-03
TW201919755A (zh) 2019-06-01

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