CN109535064B - 化合物、显示面板以及显示装置 - Google Patents

化合物、显示面板以及显示装置 Download PDF

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CN109535064B
CN109535064B CN201811604397.XA CN201811604397A CN109535064B CN 109535064 B CN109535064 B CN 109535064B CN 201811604397 A CN201811604397 A CN 201811604397A CN 109535064 B CN109535064 B CN 109535064B
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light emitting
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substituted
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CN109535064A (zh
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张磊
高威
牛晶华
代文朋
邓东阳
朱红岩
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Wuhan Tianma Microelectronics Co Ltd
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Wuhan Tianma Microelectronics Co Ltd
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Abstract

本发明属于OLED技术领域且提供了一种用作主体材料的化合物，具有式(I)的结构；其中m和n分别表示电子给体D和电子受体A的个数且选自1、2或3，p和q分别选自0、1或2；L1、L2和电子给体D各自独立地选自烷基、环烷基、杂环基、芳基、杂芳基、稠芳基或稠杂芳基；电子受体A选自含氮杂环、含氰基、含磷氧基的取代基或三芳基硼类取代基。本发明化合物中的D‑(π)‑σ‑(π)‑A结构具有双极性，σ键可有效打断电子给体D与电子受体A之间的分子内电荷传输，使激发态限制为D或A的片段内的局域激发态，因而使化合物具有小的激发态偶极矩，当其用作发光层主体材料时，可有效降低蓝光材料的效率滚降，提升发光亮度和发光效率。

Description

化合物、显示面板以及显示装置
技术领域
本发明涉及有机电致发光材料技术领域，具体地涉及一种化合物以及包括该化合物的显示面板以及显示装置。
背景技术
有机电致发光器件(OLED)作为新一代显示技术，具有超薄、自发光、视角宽、响应快、发光效率高、温度适应性好、生产工艺简单、驱动电压低、能耗低等优点，已广泛应用于平板显示、柔性显示、固态照明和车载显示等行业。
按发光机理，OLED发射的光可以分为电致荧光和电致磷光两种。荧光是单重态激子的辐射衰减跃迁所发射的光，磷光则是三重态激子辐射衰减到基态所发射的光。根据自旋量子统计理论，单重态激子和三重态激子的形成概率比例是1:3。荧光材料内量子效率不超过25％，外量子效率普遍低于5％；电致磷光材料的内量子效率理论上达到100％，外量子效率可达20％。1998年，我国吉林大学的马於光教授和美国普林斯顿大学的Forrest教授分别报道了采用锇配合物和铂配合物作为染料掺杂入发光层，第一次成功得到并解释了磷光电致发光现象，并开创性的将所制备磷光材料应用于电致发光器件。
由于磷光重金属材料有较长的寿命(μs)，在高电流密度下，可能导致三线态-三线态湮灭和浓度淬灭，造成器件性能衰减，因此通常将重金属磷光材料掺杂到合适的主体材料中，形成一种主客体掺杂体系，使得能量传递最优化，发光效率和寿命最大化。在目前的研究现状中，重金属掺杂材料商业化已成熟，很难开发可替代的掺杂材料。因此，研发新的磷光主体材料成为了一个新的方向。
发明内容
有鉴于此，本发明提供一种具有D-(π)-σ-(π)-A结构的化合物，所述化合物具有式(I)所示的化学结构：
Figure BDA0001923272870000021
其中，D表示电子给体，A表示电子受体；其中，m和n分别表示电子给体D和电子受体A的个数且m和n分别选自1、2或3；p和q分别表示L1和L2的个数且分别选自0、1或2；
L1和L2各自独立地选自单键、取代或未取代的C1-C20亚烷基、取代或未取代的C3-C20亚环烷基、取代或未取代的C3-C20亚杂环基、取代或未取代的C6-C40亚芳基、取代或未取代的C4-C40亚杂芳基、取代或未取代的C10-C60的亚稠芳基或取代或未取代的C10-C60的亚稠杂芳基中的至少一种；当p或q为2时，各个L1或L2之间可以相同或不同；
电子给体D选自取代或未取代的C1-C20烷基、取代或未取代的C3-C20环烷基、取代或未取代的C1-C20烷氧基、取代或未取代的C3-C20杂环基、取代或未取代的C6-C40芳基、取代或未取代的C4-C40杂芳基、取代或未取代的C10-C60的亚稠芳基、取代或未取代的C10-C60的亚稠杂芳基、取代或未取代的C12-C40的咔唑基及其衍生物基团、取代或未取代的C12-C40的二苯胺基及其衍生物基团、C12-C40的吖啶基及其衍生物基团中的至少一种；当m为2或3时，各个电子给体D之间可以相同或不同；
电子受体A选自含氮杂环类取代基、含氰基类取代基、三芳基硼类取代基和含磷氧基类取代基中的至少一种；当n为2或3时，各个电子受体A之间可以相同或不同。
本发明的化合物具有D-(π)-σ-(π)-A结构，是一种双极性材料，可以替代现有传统的D-π-A骨架结构。传统的D-π-A双极性材料具有很强的分子内电荷传输，导致大的偶极矩μs，而本发明的化合物中的D-(π)-σ-(π)-A结构同样具有双极性，中间的σ键可以有效打断电子给体D与电子受体A之间这种传输，使得激发态限制为电子给体D或者电子受体A的片段内的局域激发态，因而使化合物具有小的激发态偶极矩，当其用于OLED器件的发光层的主体材料时，可以有效降低蓝光材料的效率滚降，提升发光亮度和发光效率。
本发明的化合物用作电致发光器件中的主体材料，具有较高的三线态能级ET和较大的分子密度，较高玻璃化温度和分子热稳定性，有效提高载流子的平衡迁移，扩宽激子复合区域，有效提高光的取出效率，使得器件的发光效率(EQE)和寿命有了很大提升，在电致发光器件技术领域中可以得到很好的应用。
附图说明
图1是本发明实施例提供的化合物的化学通式；
图2是本发明实施例提供的一种OLED器件的结构示意图；
图3是本发明实施例提供的一种显示装置的示意图。
具体实施方式
下面通过实施例和对比例进一步说明本发明，这些实施例只是用于说明本发明，本发明不限于以下实施例。凡是对本发明技术方案进行修改或者等同替换，而不脱离本发明技术方案的范围，均应涵盖在本发明的保护范围中。
本发明的一方面是提供一种化合物，所述化合物具有式(Ⅰ)所示的化学结构：
Figure BDA0001923272870000031
其中，D表示电子给体，A表示电子受体；其中，m和n分别表示电子给体D和电子受体A的个数且m和n分别选自1、2或3；p和q分别表示L1和L2的个数且分别选自0、1或2；
L1和L2各自独立地选自单键、取代或未取代的C1-C20亚烷基、取代或未取代的C3-C20亚环烷基、取代或未取代的C3-C20亚杂环基、取代或未取代的C6-C40亚芳基、取代或未取代的C4-C40亚杂芳基、取代或未取代的C10-C60的亚稠芳基或取代或未取代的C10-C60的亚稠杂芳基中的至少一种；
电子给体D选自取代或未取代的C1-C20烷基、取代或未取代的C3-C20环烷基、取代或未取代的C1-C20烷氧基、取代或未取代的C3-C20杂环基、取代或未取代的C6-C40芳基、取代或未取代的C4-C40杂芳基、取代或未取代的C10-C60的亚稠芳基、取代或未取代的C10-C60的亚稠杂芳基、取代或未取代的C12-C40的咔唑基及其衍生物基团、取代或未取代的C12-C40的二苯胺基及其衍生物基团、C12-C40的吖啶基及其衍生物基团中的至少一种；
电子受体A选自含氮杂环类取代基、含氰基类取代基、三芳基硼类取代基和含磷氧基类取代基中的至少一种。
根据本发明所述化合物的一个实施方式，所述电子给体D选自以下基团中的至少一种：
Figure BDA0001923272870000041
其中，m、n和p各自独立地选自0、1、2或3；
U1、U2、U3各自独立地选自氢原子、取代或未取代的C1-C30烷基、取代或未取代的亚甲硅烷基、取代或未取代的C3-C20环烷基、取代或未取代的C1-C30烷氧基、取代或未取代的C6-C30芳基、取代或未取代的C10-C30稠芳基中的至少一种；
#表示连接位置。
根据本发明所述化合物的一个实施方式，所述电子给体D选自以下基团中的至少一种：
Figure BDA0001923272870000042
其中，R选自氢原子、取代或未取代的C1-C20烷基、取代或未取代的亚甲硅烷基、取代或未取代的C3-C20环烷基、取代或未取代的C1-C20烷氧基、取代或未取代的C3-C20杂环基、取代或未取代的C6-C40芳基、取代或未取代的C10-C30稠芳基、取代或未取代的C4-C40杂芳基。
根据本发明所述化合物的一个实施方式，所述电子给体D选自以下基团中的至少一种：
Figure BDA0001923272870000051
Z选自C原子、N原子、O原子、S原子或Si原子；q选自0、1、2或3；
U1、U2、U4各自独立地选自氢原子、取代或未取代的C1-C30烷基、取代或未取代的亚甲硅烷基、取代或未取代的C3-C20环烷基、取代或未取代的C1-C30烷氧基、取代或未取代的C6-C30芳基、取代或未取代的C10-C30稠芳基中的至少一种；
当Z为氧原子或硫原子时，q为0；
#表示连接位置。
根据本发明所述化合物的一个实施方式，所述电子给体D选自以下基团中的至少一种：
Figure BDA0001923272870000061
根据本发明所述化合物的一个实施方式，所述电子给体D选自以下基团中的至少一种：
Figure BDA0001923272870000062
Z选自C原子、N原子、O原子、S原子或Si原子；X选自C原子、N原子、O原子或S原子；m、n、p和q各自独立地选自0、1、2或3；
U1、U2、U3、U4各自独立地选自氢原子、取代或未取代的C1-C30烷基、取代或未取代的亚甲硅烷基、取代或未取代的C3-C20环烷基、取代或未取代的C1-C30烷氧基、取代或未取代的C6-C30芳基、取代或未取代的C10-C30稠芳基中的至少一种；
当Z或X为氧原子或硫原子时，p或q为0；
#表示连接位置。
根据本发明所述化合物的一个实施方式，所述电子给体D选自以下基团中的至少一种：
Figure BDA0001923272870000071
其中，R和R’各自独立地选自氢原子、取代或未取代的C1-C20烷基、取代或未取代的C3-C20环烷基、取代或未取代的C1-C20烷氧基、取代或未取代的C3-C20杂环基、取代或未取代的C6-C40芳基、取代或未取代的C4-C40杂芳基。
根据本发明所述化合物的一个实施方式，所述电子受体A选自以下基团中的至少一种：
Figure BDA0001923272870000081
其中，#表示连接位置；
R选自氢原子、C1-C20烷基、C1-C20烷氧基、C4-C8环烷基、C6-C40芳基、C4-C40杂芳基。
根据本发明所述化合物的一个实施方式，所述电子受体A选自以下基团中至少一种：
Figure BDA0001923272870000091
其中，#表示连接位置。
根据本发明所述化合物的一个实施方式，所述电子受体A选自以下基团中的至少一种：
Figure BDA0001923272870000092
其中，#表示连接位置。
根据本发明所述化合物的一个实施方式，所述电子受体A选自以下基团中的至少一种：
Figure BDA0001923272870000093
其中，#表示连接位置。
根据本发明所述化合物的一个实施方式，所述化合物选自以下化合物：
Figure BDA0001923272870000101
Figure BDA0001923272870000111
Figure BDA0001923272870000121
本发明还提供一种显示面板，所述显示面板包括有机发光器件，其中所述有机发光器件包括相对设置的阳极、阴极，以及位于阳极和阴极之间的发光层，其中发光层包括主体材料和客体材料，所述发光层的主体材料为本发明所述的化合物中的一种或多种。
根据本发明的显示面板，其中所述有机发光器件的主体材料的单重态能级S1高于所述客体材料的单重态能级S1，且主体材料的单重态能级S1与客体材料的单重态能级S1的差值小于0.8eV；所述主体材料的三重态能级T1高于所述客体材料的三重态能级T1，且主体材料的三重态能级T1与客体材料的三重态能级T1的差值小于0.4eV。
根据本发明的显示面板，当所述发光层的主体材料为红光发光材料时，所述红光发光材料的最低三重态能级T1为2.2eV；
当所述发光层的主体材料为绿光发光材料时，所述绿光发光主体材料的最低三重态能级T1为2.5eV；
当所述发光层的发光主体材料为蓝光发光材料时，所述蓝光发光主体材料的最低三重态能级T1为2.7eV。
根据本发明所述显示面板的一个实施方式，所述有机发光器件还包括空穴注入层、空穴传输层、电子阻挡层、空穴阻挡层、电子传输层或电子注入层中的一层或多层。
根据本发明所述显示面板的一个实施方式，所述显示面板包括有机发光器件，其中所述有机发光器件包括相对设置的阳极、阴极，以及位于所述阴极背离所述阳极一侧的盖帽层，以及位于所述阳极与所述阴极之间的有机层，所述有机层包括电子传输层、空穴传输层、发光层，所述盖帽层与所述电子传输层、空穴传输层、发光层中的至少一者的材料为本发明所述的化合物。
在本发明所述的显示面板中，有机发光器件的阳极材料可以选自金属例如，铜、金、银、铁、铬、镍、锰、钯、铂等及它们的合金；金属氧化物例如，氧化铟、氧化锌、氧化铟锡(ITO)、氧化铟锌(IZO)等；导电性聚合物例如，聚苯胺、聚吡咯、聚(3-甲基噻吩)等。除了以上有助于空穴注入材料及其组合之外，阳极材料还可包括其他已知的适合做阳极的材料。
在本发明所述的显示面板中，有机发光器件的阴极材料可以选自金属例如，铝、镁、银、铟、锡、钛等及它们的合金；多层金属材料例如，LiF/Al、LiO2/Al、BaF2/Al等。除以上有助于电子注入的材料及其组合之外，阴极材料还可包括其他已知的适合做阴极的材料。
在本发明的一个实施例中，所述的显示面板中的有机发光器件可以这样制作：在透明或不透明的光滑的基板上形成阳极，在阳极上形成有机薄层，在有机薄层上形成阴极。有机薄层的形成可以采用如蒸镀、溅射、旋涂、浸渍、离子镀等已知的成膜方法。最后在阴极上制备一层有机光学覆盖层CPL(盖帽层)。光学覆盖层CPL的材料为本发明所述的化合物。光学覆盖层CPL可以通过蒸镀或溶液法加工制备。溶液加工法包括喷墨打印法、旋转涂布、刮刀涂布、丝网印刷、卷对卷印刷等方法。
下面提供几个示例性的化合物的合成示例。
实施例1
化合物H003的合成
Figure BDA0001923272870000141
在250ml圆底烧瓶中，将2,6-二溴-9,9,10,10-四甲基-9,10-二氢蒽(15mmol)、碘化铜(15mmol)、叔丁醇钾(65mmol)、1,2-二氨基环己烷(12mmol)和9H-咔唑(25mmol)加入到干燥的1,4-二氧六环(400ml)中，在氮气氛围下回流48小时，得到的中间体冷却到室温，加入水中，然后通过硅藻土垫过滤，滤液用二氯甲烷萃取，然后用水洗涤，并采用无水硫酸镁干燥，过滤和蒸发后，用硅胶柱层析纯化粗产物得到中间产物H003-1。
在250ml圆底烧瓶中，将中间产物H003-1(15mmol)和醋酸钾(40mmol)与干燥的1,4-二氧六环(60ml)、Pd(PPh3)2Cl2(0.4mmol)和联硼酸频那醇酯(25mmol)混合，在90℃氮气氛围下搅拌48小时。得到的中间体冷却到室温，加入水中，然后通过硅藻土垫过滤，滤液用二氯甲烷萃取，然后用水洗涤，并采用无水硫酸镁干燥，过滤和蒸发后，用硅胶柱层析纯化粗产物得到中间产物H003-2。
在250ml圆底烧瓶中，H003-2(10mmol)、4-氯-2,6-二苯基嘧啶(12mmol)和Pd(PPh3)4(0.3mmol)加入到甲苯(30ml)/乙醇(20ml)和碳酸钾(12mmol)水溶液(10ml)的混合物中，在氮气氛围下回流反应12h。将得到的混合物冷却到室温，加入水中，然后通过硅藻土垫过滤，滤液用二氯甲烷萃取，然后用水洗涤，并采用无水硫酸镁干燥，过滤和蒸发后，用硅胶柱层析纯化粗产物得到最终产物H003。
化合物H003元素分析结构(分子式C46H37N3)：理论值：C,87.45；H,5.90；N,6.65。测试值：C,87.45；H,5.91；N,6.64。通过液相质谱联用分析得ESI-MS(m/z)(M+)：理论值为631.30，测试值为631.81。
实施例2
化合物H017的合成
Figure BDA0001923272870000151
在250ml圆底烧瓶中，将2,6-二溴-9,9,10,10-四甲基-9,10-二氢蒽(15mmol)、碘化铜(15mmol)、叔丁醇钾(65mmol)、1,2-二氨基环己烷(12mmol)和二芳胺(25mmol)加入到干燥的1,4-二氧六环(400ml)中，在氮气氛围下回流48小时，得到的中间体冷却到室温，加入水中，然后通过硅藻土垫过滤，滤液用二氯甲烷萃取，然后用水洗涤，并采用无水硫酸镁干燥，过滤和蒸发后，用硅胶柱层析纯化粗产物得到中间产物H017-1。
在250ml圆底烧瓶中，将中间产物H017-1(15mmol)和醋酸钾(40mmol)与干燥的1,4-二氧六环(60ml)、Pd(PPh3)2Cl2(0.4mmol)和联硼酸频那醇酯(25mmol)混合，在90℃氮气氛围下搅拌48小时。得到的中间体冷却到室温，加入水中，然后通过硅藻土垫过滤，滤液用二氯甲烷萃取，然后用水洗涤，并采用无水硫酸镁干燥，过滤和蒸发后，用硅胶柱层析纯化粗产物得到中间产物H017-2。
在250ml圆底烧瓶中，H017-2(10mmol)、1-氯-3,5-(二吡啶基)-苯(12mmol)和Pd(PPh3)4(0.3mmol)加入到甲苯(30ml)/乙醇(20ml)和碳酸钾(12mmol)水溶液(10ml)的混合物中，在氮气氛围下回流反应12h。将得到的混合物冷却到室温，加入水中，然后通过硅藻土垫过滤，滤液用二氯甲烷萃取，然后用水洗涤，并采用无水硫酸镁干燥，过滤和蒸发后，用硅胶柱层析纯化粗产物得到最终产物H017。
化合物H017元素分析结构(分子式C46H39N3)：理论值：C,87.17；H,6.20；N,6.63。测试值：C,87.17；H,6.19；N,6.64。通过液相质谱联用分析得ESI-MS(m/z)(M+)：理论值为633.31，测试值为633.75。
实施例3
化合物H041的合成
Figure BDA0001923272870000171
在250ml圆底烧瓶中，将2,6-二溴-9,9,10,10-四甲基-9,10-二氢蒽(15mmol)、碘化铜(15mmol)、叔丁醇钾(65mmol)、1,2-二氨基环己烷(12mmol)和9,9-二甲基-9,10-二氢吖啶(25mmol)加入到干燥的1,4-二氧六环(400ml)中，在氮气氛围下回流48小时，得到的中间体冷却到室温，加入水中，然后通过硅藻土垫过滤，滤液用二氯甲烷萃取，然后用水洗涤，并采用无水硫酸镁干燥，过滤和蒸发后，用硅胶柱层析纯化粗产物得到中间产物H041-1。
在250ml圆底烧瓶中，将中间产物H041-1(15mmol)和醋酸钾(40mmol)与干燥的1,4-二氧六环(60ml)、Pd(PPh3)2Cl2(0.4mmol)和联硼酸频那醇酯(25mmol)混合，在90℃氮气氛围下搅拌48小时。得到的中间体冷却到室温，加入水中，然后通过硅藻土垫过滤，滤液用二氯甲烷萃取，然后用水洗涤，并采用无水硫酸镁干燥，过滤和蒸发后，用硅胶柱层析纯化粗产物得到中间产物H041-2。
在250ml圆底烧瓶中，H041-2(10mmol)、1-氯-4-(二苯基膦酰基)-苯(12mmol)和Pd(PPh3)4(0.3mmol)加入到甲苯(30ml)/乙醇(20ml)和碳酸钾(12mmol)水溶液(10ml)的混合物中，在氮气氛围下回流反应12h。将得到的混合物冷却到室温，加入水中，然后通过硅藻土垫过滤，滤液用二氯甲烷萃取，然后用水洗涤，并采用无水硫酸镁干燥，过滤和蒸发后，用硅胶柱层析纯化粗产物得到最终产物H041。
化合物H041元素分析结构(分子式C51H46NOP)：理论值：C,85.09；H,6.44；N,1.95；O,2.22；P,4.30。测试值：C,85.09；H,6.43；N,1.96；O,2.22；P,4.30。通过液相质谱联用分析得ESI-MS(m/z)(M+)：理论值为719.33，测试值为719.82。
实施例4
化合物H072的合成
Figure BDA0001923272870000181
在250ml圆底烧瓶中，将5-苯基-5,8-二氢-5,8-二氮茚[2,1-c]芴(15mmol)、碘化铜(15mmol)、叔丁醇钾(65mmol)、1,2-二氨基环己烷(12mmol)和9,9-二甲基-9,10-二氢吖啶(25mmol)加入到干燥的1,4-二氧六环(400ml)中，在氮气氛围下回流48小时，得到的中间体冷却到室温，加入水中，然后通过硅藻土垫过滤，滤液用二氯甲烷萃取，然后用水洗涤，并采用无水硫酸镁干燥，过滤和蒸发后，用硅胶柱层析纯化粗产物得到中间产物H072-1。
在250ml圆底烧瓶中，将中间产物H072-1(15mmol)和醋酸钾(40mmol)与干燥的1,4-二氧六环(60ml)、Pd(PPh3)2Cl2(0.4mmol)和联硼酸频那醇酯(25mmol)混合，在90℃氮气氛围下搅拌48小时。得到的中间体冷却到室温，加入水中，然后通过硅藻土垫过滤，滤液用二氯甲烷萃取，然后用水洗涤，并采用无水硫酸镁干燥，过滤和蒸发后，用硅胶柱层析纯化粗产物得到中间产物H072-2。
在250ml圆底烧瓶中，H072-2(10mmol)、4-氯-2,6-二联苯基嘧啶(12mmol)和Pd(PPh3)4(0.3mmol)加入到甲苯(30ml)/乙醇(20ml)和碳酸钾(12mmol)水溶液(10ml)的混合物中，在氮气氛围下回流反应12h。将得到的混合物冷却到室温，加入水中，然后通过硅藻土垫过滤，滤液用二氯甲烷萃取，然后用水洗涤，并采用无水硫酸镁干燥，过滤和蒸发后，用硅胶柱层析纯化粗产物得到最终产物H072。
化合物H072元素分析结构(分子式C70H52N4)：理论值：C,88.58；H,5.52；N,5.90。测试值：C,88.58；H,5.51；N,5.91。通过液相质谱联用分析得ESI-MS(m/z)(M+)：理论值为948.42，测试值为948.71。
表1示例性化合物的能级
化合物 HOMO(eV) LUMO(eV) Eg(eV) E<sub>T</sub>(eV)
H003 -5.583 -2.439 3.144 2.875
H017 -5.608 -2.406 3.202 2.902
H041 -5.541 -2.387 3.154 2.946
H072 -5.495 -2.502 2.993 2.869
从表1可以看出，作为主体材料，H003、H017、H041和H072显示出合适的HOMO与LUMO能级以及很高的三线态ET(＞2.85ev)，适合应用于红光(ET至少＞2.2ev)、绿光(ET至少＞2.5ev)和蓝光(ET至少＞2.7ev)，可以有效地实现主客体之间的能量传递且不会有电荷回传的风险。
实施例5
本实施例提供了一种有机发光器件。如图2所示，有机发光器件包括：玻璃基板1、ITO阳极2、第一空穴传输层3、第二空穴传输层4、发光层5、第一电子传输层6、第二电子传输层7、阴极8(镁银电极，镁银质量比为9:1)和盖帽层(CPL)9，其中ITO阳极2的厚度是15nm，第一空穴传输层3的厚度是10nm、第二空穴传输层4的厚度是95nm、发光层5的厚度是30nm、第一电子传输层6的厚度是35nm、第二电子传输层7的厚度是5nm、镁银电极8的厚度是15nm和盖帽层(CPL)9的厚度是100nm。
本发明的有机发光器件的制备步骤如下：
1)将玻璃基板1切成50mm×50mm×0.7mm的大小，分别在异丙醇和去离子水中超声处理30分钟，然后暴露在臭氧下约10分钟来进行清洁；将所得的具有ITO阳极的玻璃基板安装到真空沉积设备上；
2)在ITO阳极层2上，通过真空蒸镀方式蒸镀空穴注入层材料HAT-CN，厚度为10nm，该层作为第一空穴传输层3；
3)在第一空穴传输层3上真空蒸镀第二空穴传输层2材料为TAPC，厚度为110nm，作为第二空穴传输层4；
4)空穴传输层4上共沉积发光层5，其中，化合物H003作为主体材料，Ir(ppy)3作为掺杂材料，化合物H003与Ir(ppy)3的质量比为19:1，厚度为30nm；
5)在发光层5上真空蒸镀第一电子传输层6，第一电子传输层6的材料为BPen，厚度为30nm；
6)在第一电子传输层6上真空蒸镀第二电子传输层7，第二电子传输层7的材料为Alq3，厚度为5nm；
7)在第二电子传输层7上真空蒸镀镁银电极，其中，质量比Mg:Ag为9:1，厚度为15nm，作为阴极8；
8)在阴极8上真空蒸镀高折射率的空穴型材料CBP，厚度为100nm，作为阴极覆盖层(盖帽层或CPL)9使用。
本实施例涉及的化合物及其结构如下所示。
Figure BDA0001923272870000211
实施例6
器件制作过程同实施例5，不同之处在于主体材料为H017，其他各层材料均相同。
Figure BDA0001923272870000221
实施例7
器件制作过程同实施例5，不同之处在于主体材料为H041，其他各层材料均相同。
Figure BDA0001923272870000222
实施例8
器件制作过程同实施例5，不同之处在于主体材料为H072，其他各层材料均相同。
Figure BDA0001923272870000223
对比例1
对比器件制作过程同实施例5，不同之处在于主体材料为CzTRZ，其他各层材料均相同。
Figure BDA0001923272870000231
表2器件性能表征
编号 主体材料 驱动电压(V) EQE/％ CE(cd/A)
实施例1 H003 3.80 28.2％ 118.9
实施例2 H017 3.82 31.3％ 125.7
实施例3 H041 3.79 29.7％ 120.1
实施例4 H072 3.86 30.6％ 123.8
对比例1 CzTRZ 4.10 24.2％ 103.2
从表2可以看出，相对于对比例1中的器件，使用本发明所述化合物的发光器件具有更低的驱动电压，驱动电压约下降8.5％，因此可以有效降低器件的功耗。应用本发明所述化合物的器件具有更高的发光效率，约提升20％-25％左右，可以有效地提升器件的发光亮度及寿命。
本发明的又一方面还提供一种显示装置，其包括如上文所述的有机发光显示面板。
在本发明中，有机发光显示装置可以是OLED，其可以用在有机发光显示装置中，其中有机发光显示装置可以是手机显示屏、电脑显示屏、液晶电视显示屏、智能手表显示屏、智能汽车显示面板、VR或AR头盔显示屏、各种智能设备的显示屏等。图3是根据本发明的实施例提供的一种显示装置的示意图。在图3中，11表示手机显示屏。
本申请虽然以较佳实施例公开如上，但并不是用来限定权利要求，任何本领域技术人员在不脱离本申请构思的前提下，都可以做出若干可能的变动和修改，因此本申请的保护范围应当以本申请权利要求所界定的范围为准。

Claims (7)

1.化合物，其特征在于，选自如下化学结构：
Figure FDA0003827200470000011
2.一种显示面板，包括有机发光器件，其中所述有机发光器件包括相对设置的阳极、阴极，以及位于阳极和阴极之间的发光层，其中发光层包括主体材料和客体材料，其特征在于，所述发光层的主体材料为权利要求1所述的化合物中的一种或多种。
3.根据权利要求2所述的显示面板，其特征在于，所述主体材料的单重态能级S1高于所述客体材料的单重态能级S1，且主体材料的单重态能级S1与客体材料的单重态能级S1的差值小于0.8eV；所述主体材料的三重态能级T1高于所述客体材料的三重态能级T1，且主体材料的三重态能级T1与客体材料的三重态能级T1的差值小于0.4eV。
4.根据权利要求3所述的显示面板，其特征在于，当所述发光层的主体材料为红光发光材料时，所述红光发光材料的最低三重态能级T1为2.2eV；
当所述发光层的主体材料为绿光发光材料时，所述绿光发光主体材料的最低三重态能级T1为2.5eV；
当所述发光层的发光主体材料为蓝光发光材料时，所述蓝光发光主体材料的最低三重态能级T1为2.7eV。
5.根据权利要求2至4任一项所述的显示面板，其特征在于，所述有机发光器件还包括空穴注入层、空穴传输层、电子阻挡层、空穴阻挡层、电子传输层或电子注入层中的一层或多层。
6.一种显示面板，包括有机发光器件，其中所述有机发光器件包括相对设置的阳极、阴极，以及位于所述阴极背离所述阳极一侧的盖帽层，以及位于所述阳极与所述阴极之间的有机层，所述有机层包括电子传输层、空穴传输层、发光层，所述盖帽层与所述电子传输层、空穴传输层、发光层中的至少一者的材料为权利要求1所述的化合物。
7.一种显示装置，包括权利要求2至6任一项所述的显示面板。
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