CN109530957A - 接合材料 - Google Patents

接合材料 Download PDF

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Publication number
CN109530957A
CN109530957A CN201811042895.XA CN201811042895A CN109530957A CN 109530957 A CN109530957 A CN 109530957A CN 201811042895 A CN201811042895 A CN 201811042895A CN 109530957 A CN109530957 A CN 109530957A
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CN
China
Prior art keywords
grafting material
metal particle
melting
particle
refractory metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201811042895.XA
Other languages
English (en)
Inventor
坂田真浩
山口真树
齐藤晃
齐藤晃一
竹内雅记
上野史贵
安克彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyota Motor Corp
Resonac Corp
Original Assignee
Hitachi Chemical Co Ltd
Toyota Motor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd, Toyota Motor Corp filed Critical Hitachi Chemical Co Ltd
Publication of CN109530957A publication Critical patent/CN109530957A/zh
Pending legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0244—Powders, particles or spheres; Preforms made therefrom
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B23K35/262—Sn as the principal constituent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/28—Selection of soldering or welding materials proper with the principal constituent melting at less than 950 degrees C
    • B23K35/286—Al as the principal constituent
    • B23K35/288—Al as the principal constituent with Sn or Zn
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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    • B23K35/3006—Ag as the principal constituent
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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    • B23K35/3013—Au as the principal constituent
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    • B23K35/302—Cu as the principal constituent
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B23K35/3601—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest with inorganic compounds as principal constituents
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B23K35/3613—Polymers, e.g. resins
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
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    • B23K35/362—Selection of compositions of fluxes
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
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    • H05K3/3436—Leadless components having an array of bottom contacts, e.g. pad grid array or ball grid array components
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    • H—ELECTRICITY
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    • H05K3/3463—Solder compositions in relation to features of the printed circuit board or the mounting process
    • H—ELECTRICITY
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Abstract

本说明书中公开了一种接合材料，其含有高熔点金属颗粒、低熔点金属颗粒和热固性助熔剂树脂。相对于高熔点金属颗粒与低熔点金属颗粒的总质量，高熔点金属颗粒的质量比例为55％至75％。

Description

接合材料
技术领域
本说明书中公开的技术涉及接合材料，特别是不大可能导致晶须发生的接合材料。
背景技术
已知通过将具有高熔点的金属颗粒如铜(Cu)与具有低熔点的金属颗粒如锡合金(Sn合金)混合所获得的接合材料(焊料材料)(例如，日本未经审查的专利申请公开号2002-254194(JP 2002-254194A)和日本未经审查的专利申请公开号2002-261105(JP 2002-261105A))。这样的接合材料适合于瞬态液相烧结法(TLPS)。上述接合材料被用于其中需要两次回流工序的安装工序(如在板上安装半导体模块)中的一次回流。
发明内容
在使用接合材料时，晶须的抑制是一个问题。本说明书中公开的技术提供了一种接合材料，通过该接合材料，可以通过限制高熔点金属颗粒与低熔点金属颗粒之间的共混比并且共混入热固性助熔剂树脂来抑制晶须的发生。
本发明的一个方面涉及一种接合材料，其含有高熔点金属颗粒、低熔点金属颗粒和热固性助熔剂树脂。“高熔点金属”是指具有比“低熔点金属”高的熔点的金属。这里，特别地，高熔点金属可具有比Sn-Ag-Cu接合材料高的熔点。“低熔点金属”是指具有比“高熔点金属”低的熔点的金属。相对于高熔点金属颗粒与低熔点金属颗粒的总质量，高熔点金属颗粒的质量比例为55％至75％(因此，低熔点金属颗粒的质量比例为45％至25％)。
根据上述质量比例和热固性助熔剂树脂的共混入，所有导致晶须的Sn组分被用于与高熔点金属合金化，在回流后没有剩余的Sn组分。因此，可以抑制晶须的发生。当高熔点金属颗粒的质量比例低于55％时，低熔点金属在烧结后残留。残留的低熔点金属导致晶须的发生。另一方面，当高熔点金属颗粒的质量比例超过75％时，合金化不会在整个接合材料中进行，并且存在接合强度不够的风险。这里，高熔点金属颗粒的质量比例优选为65％至75％。在这样的范围内，晶须抑制效果和接合强度之间的平衡是有利的。在实施例中，示出了其中确认了晶须抑制效果的测试结果。
本说明书中公开的技术的细节和进一步改进将在下文“具体实施方式”中描述。
附图说明
本发明的示例性实施方案的特征、优点以及技术和工业重要性将在下文结合附图描述，在附图中，相同的附图标记表示相同的要素，并且其中：
图1为接合材料(烧结前)的图像图；
图2为接合材料(烧结后)的图像图；
图3A为用于说明使用接合材料的部件安装工序的图并且是用于说明膏状接合材料的印刷工序的图；
图3B为用于说明使用接合材料的部件安装工序的图并且是用于说明部件装载工序的图；
图3C为用于说明使用接合材料的部件安装工序的图并且是用于说明回流工序的图；
图4为示出接合材料评价测试结果的表；和
图5为示出接合材料评价测试结果的表。
具体实施方式
本说明书中公开的接合材料为导电性接合材料，其使用瞬态液相烧结法获得并可通过在260℃以下的温度下进行回流来烧结。在烧结后，接合材料不会在260℃下再熔化并且可抑制晶须的发生。根据本说明书中公开的接合材料，与相关技术相比，可以降低一次回流温度。另外，本说明书中公开的接合材料可抑制晶须的发生。也就是说，即便在烧结后长时间放置，也不会发生导电性晶须。因此，不需要绝缘方法如在烧结后向合金的表面上施加涂布试剂如绝缘树脂。
本说明书中公开的接合材料的技术要素如下。这里，以下技术要素是独立的技术要素，并单独地或以不同组合呈现技术有用性。
本说明书中公开的复合材料的图像示于图1和图2中。图1为烧结前的接合材料10a的图像图，图2为烧结后的接合材料10b的图像图。烧结前的接合材料10a含有高熔点金属颗粒12、低熔点金属颗粒13a和热固性助熔剂树脂14a。高熔点金属颗粒12为例如粒径为5μm至15μm的Cu颗粒。低熔点金属颗粒13a为例如粒径为20μm至40μm的Sn合金颗粒。相对于高熔点金属颗粒12与低熔点金属颗粒13a的总质量，高熔点金属颗粒12的质量比率为例如65％。助熔剂树脂14a具有流动性，并含有高熔点金属颗粒12和低熔点金属颗粒13a。由于助熔剂树脂14a具有流动性，因而烧结前的接合材料10a是膏状的。
在烧结后的接合材料(图2)中，低熔点金属颗粒熔化并与一些高熔点金属颗粒合金化。硬化合金13b覆盖高熔点金属的所有残余颗粒并且烧结后的接合材料10b被烧结。另外，助熔剂树脂14b被热固化。由于会导致晶须的全部低熔点金属(图1中的低熔点金属颗粒13a)都被用于合金，因而不会发生晶须。
高熔点金属颗粒可为具有比Sn-Ag-Cu接合材料高的熔点的金属(金属合金)。高熔点金属颗粒可为Cu、Cu合金、Al、Ag和Au中的任何一者，并可具有5μm至35μm的粒径。高熔点金属颗粒特别理想地为Cu颗粒。另外，当粒径小于5μm时，颗粒的聚集力增大，并且在制备接合材料膏时，粘度可能变高。另一方面，当粒径超过30μm时，由于接合材料中的金属密度降低，因而接合强度可能不够。这里，在本说明书中公开的接合材料中，作为高熔点金属颗粒，可仅含有Cu、Cu合金、Al、Ag和Au中任何一种类型的金属或者可含有多种类型的金属。高熔点金属颗粒的表面可镀覆有Sn或Sn合金。
低熔点金属颗粒可为Sn合金，并理想地为中温型到低温型焊料材料如Sn-Ag型材料、Sn-Ag-Cu型材料、Sn-In-Ag-Bi型材料、Sn-Zn型材料、Sn-Zn-Bi型材料、Sn-Bi型材料和Sn-In型材料。关于低熔点金属颗粒，本说明书中公开的接合材料可仅含有一种类型的Sn合金或者可含有多种类型的Sn合金。
理想地，低熔点金属颗粒为Sn合金并具有20μm至40μm的粒径。当粒径小于20μm时，针对高熔点金属颗粒的湿铺展性(润湿性)将变差，并存在回流后出现在接合材料的表面上的高熔点金属未被覆盖的可能性。结果，可能发生有缺陷的接合。当粒径超过40μm时，在板上印刷接合材料时的精度可能降低。
共混到接合材料中的助熔剂树脂可包括热固性环氧树脂。特别地，作为助熔剂树脂，优选使用其中均匀混合环氧树脂、活性剂、松香、触变剂、溶剂等的树脂。另外，除了上述之外，还可包含固化促进剂、抗氧化剂、粉末表面处理剂、偶联剂等，并且它们优选相对于助熔剂树脂的树脂组成在0.01质量％至5.0质量％的范围内。
环氧树脂不受特别限制，例如，可使用双酚A型、双酚F型、联苯型、萘型等。环氧树脂在室温下优选为液体。当使用固体环氧树脂时，优选将其与液体环氧树脂相组合。
活性剂不受限制，只要其具有除去金属表面上存在的金属氧化物的作用即可。然而，优选有机酸、含有非解离性卤代化合物的非解离性活性剂，和胺类活性剂。作为有机酸，可例举琥珀酸、戊二酸、己二酸、吡啶甲酸、6-甲基吡啶甲酸、3-环丙基吡啶甲酸、5-丁基吡啶甲酸、6-环丁基吡啶甲酸、苯甲酸、1,2-氨基十二烷酸、癸二酸、二苯基乙酸、3,5-二溴水杨酸、对-茴香酸等。
作为含有非解离性卤代化合物的非解离性活性剂，例如如日本未经审查的专利申请公开号2015-160234(JP 2015-160234A)中所述，可例举其中卤素原子通过共价键键合的非盐型有机化合物。卤代化合物可以是由单一元素如氯、溴和氟的共价键形成的化合物，例如氯化产物、溴化物和氟化物，并且可以是具有氯、溴和氟中任意两者或全部的共价键的化合物。为了改善在水性溶剂中的溶解性，这样的化合物优选具有极性基团如羟基基团或羧基基团，例如卤化醇或羧基卤化物。作为卤化醇，可例举例如溴化醇如2,3-二溴丙醇/2,3-二溴丁二醇/反式-2,3-二溴-2-丁烯-1,4-二醇/1,4-二溴-2-丁醇/三溴新戊醇；氯化醇如1,3-二氯-2-丙醇/1,4-二氯-2-丁醇；氟化醇如3-氟儿茶酚；及其他类似化合物。作为羧基卤化物，可例举羧基碘化物如2-碘苯甲酸、3-碘苯甲酸、2-碘丙酸、5-碘水杨酸和5-碘邻氨基苯甲酸；羧基氯化物如2-氯苯甲酸和3-氯丙酸；溴化羧酸如2,3-二溴丙酸、2,3-二溴琥珀酸和2-溴苯甲酸；及其他类似化合物。可单独使用一种类型的此类活性剂或者可以混合物使用两种或更多种类型的这些活性剂。
作为胺类活性剂，可例举例如JP 2015-160234A中描述的下列活性剂。作为胺类活性剂，可例举胺类(多胺如乙二胺)、胺盐(诸如三甲醇胺、环己胺和二乙胺的胺类以及氨基醇的有机酸盐或无机酸盐(盐酸、硫酸、氢溴酸等))、氨基酸(甘氨酸、丙氨酸、天冬氨酸、谷氨酸、缬氨酸等)、酰胺化合物等。具体而言，可例举二苯胍氢溴酸盐、环己胺氢溴酸盐、二乙胺盐(盐酸盐、琥珀酸盐、己二酸盐、癸二酸盐等)、三乙醇胺、单乙醇胺和这些胺的氢溴酸盐。可单独使用一种类型的此类活性剂或者可使用两种或更多种类型的此类活性剂的混合物。
相对于助熔剂树脂的组成，活性剂优选以0.5质量％至10.0质量％的范围混合。当该范围小于0.5％时，低熔点金属颗粒溶解后的润湿性劣化，并且烧结性能往往不够。另外，当该范围超过10质量％时，助熔剂组合物的绝缘性能往往劣化。
松香不受特别限制，只要其为天然松香即可，如具有羧基基团的松香或聚合松香。例如，优选天然松香如松香酸、新松香酸、长叶松酸、海松酸、异海松酸和脱氢松香酸，以及聚合松香如丙烯酸酯化松香、氢化松香和马来松香。可单独使用一种类型的此类松香或者可使用其两种或更多种类型的混合物。
作为溶剂，优选使用具有较高沸点的水溶性溶剂。例如，可例举JP2015-160234A中描述的下列溶剂。作为此类溶剂，优选使用沸点为170℃以上的水溶性溶剂。作为此类溶剂，可例举例如二甘醇、二丙二醇、三甘醇、己二醇、己基二甘醇(hexyl diglycol)、1,5-戊二醇、甲基卡必醇、丁基卡必醇、2-乙基己基二甘醇(EHDG)、辛二醇、苯基乙二醇、二乙二醇单己醚和四乙二醇二甲醚。可单独使用一种类型的此类溶剂或者可使用其两种或更多种类型的混合物。
助熔剂中可含有抗氧化剂，并可例举酚类抗氧化剂、硫抗氧化剂等。酚类抗氧化剂可为在分子中具有取代或未取代的酚基团的酚类抗氧化剂或者具有受阻酚结构或半受阻酚结构的酚类抗氧化剂。作为硫抗氧化剂，可例举在分子中具有硫和酯键的硫酯抗氧化剂。可单独使用一种类型的此类抗氧化剂或者可使用其两种或更多种类型的混合物。
导电性接合材料膏中金属颗粒和助熔剂树脂的比例可根据金属的组成和粒径、助熔剂树脂的类型等从适当的范围中选择。相对于整个膏剂(整个接合材料)的质量，金属颗粒的比例优选为85质量％至95质量％，特别优选88质量％至93质量％。当该比例低于85质量％时，发生接合材料的印刷形状缺陷、加热过程中的下垂等。另外，当该比例超过95质量％时，金属颗粒可能不会充分混合到助熔剂树脂中。
优选使用本说明书中公开的接合材料将用于表面安装的部件接合到印刷电路板。作为印刷板的材料，可使用材料如酚醛纸、环氧玻璃、聚酰亚胺、双马来酰亚胺三嗪、液晶聚合物、热固性树脂如聚四氟乙烯和聚醚醚酮、陶瓷或金属。用于表面安装的部件可为芯片部件、半导体部件和小型安装部件中的任何一种。芯片部件的实例包括电子部件如电容器、电阻器和二极管。半导体部件的实例包括四方扁平封装(QFP)、薄小外形封装(TSOP)、小外形封装(SOP)、芯片尺寸封装(CSP)和球栅阵列(BGA)。小型安装部件的实例包括铝电解电容器、晶体管、微调器、继电器和变压器。
图3A至3C示出了用于说明使用本说明书中公开的接合材料的部件安装工序的图。图3A为用于说明在电路板3上印刷膏状接合材料2的工序的图。导电性膏状接合材料2使用金属掩模等印刷在电路板3上的铜配线4上。图3B为用于说明部件装载工序的图。芯片部件5由电子部件安装机器(芯片安装器)等安装在印刷的接合材料2上。图3C为用于说明回流工序的图。图3C示出了回流加热后的板。当其上安装有芯片部件5的电路板3在回流炉等中被加热时，接合材料2合金化，整个材料从膏形式凝固并完成安装。这里，在图3C中，为了示意性地表示接合材料2已从图3B中的状态改变并合金化，接合材料2用阴影线示意。
当进行两次回流并在半导体模块安装板、部件内置板等上安装部件时，如果本说明书中公开的接合材料被用于一次回流，则获得以下优点。
(1)可以在比相关技术中低的温度(≤260℃)下安装部件。
(2)在二次回流(约260℃)期间没有再熔化。
(3)环境负荷小(支持无Pb)。
(4)接合部中不发生晶须。由于无晶须发生，因而无需在接合后向接合部分施加涂布试剂如绝缘树脂。
下面将描述实施例。用不同的配方制备9种类型的评价样品和3种类型的对比例，并评价(1)是否发生再熔化、(2)剪切强度和(3)晶须的发生。进行的方法如下。图4和图5示出了实施例1至9和对比例1至3的组成和评价结果(特性)。
<助熔剂树脂的制备>(一般方法)
将液态环氧树脂(产品名“jER828”/“jER806”，双酚A型/F型环氧树脂，可从Mitsubishi Chemical Corporation商购获得)、松香(脱氢松香酸)、活性剂(戊二酸)、触变剂(1,2-羟基硬脂酸甘油三酯)和溶剂(丁基卡必醇)彻底混合以制备助熔剂树脂。
<导电性膏(接合材料)的制备>(一般方法)
将助熔剂树脂、市售铜粉(平均粒径10μm)和焊料粉(SAC305，平均粒径30μm)与软化剂一起混炼以制备导电性膏接合材料。SAC305是具有Sn-3.0Ag-0.5Cu的合金组成的焊料材料。
<评价样品(实施例和对比例)的制备>
在具有其上形成有铜箔焊盘的表面的玻璃环氧树脂板上使用0.8mm×1.5mm×100μm金属掩模用金属刮板印刷上述接合材料。然后，将20个镀Sn的1005芯片放置在铜箔焊盘的印刷膜上。芯片部件在预热温度为180℃并且峰值温度为250℃的回流条件下进行安装，并用作评价样品。
<评价260℃下的再熔化>
将制得的评价样品在设定为260℃的焊料浴中漂浮1分钟，目视观察接合部是否再熔化。
<评价剪切强度>
使用剪切试验机(“Universal bond tester 4000”，可自Dage Japan商购获得)测量制得的评价样品的芯片接合部的剪切强度。
<评价晶须的发生>
将制得的评价样品置于85℃和85RH的高温高湿条件下200小时，然后在室温下放置24小时。这些进行5次，然后在显微镜下观察是否发生晶须。在上述条件下将此重复五次相当于在高温高湿下放置1000小时。
实施例1至9和对比例1至3的组成的技术意义如下。
实施例1：参比组成(Cu颗粒的含量：65重量％)
实施例2：Cu颗粒的质量比例的下限(Cu颗粒的含量：55重量％)
实施例3：Cu颗粒的质量比例的上限(Cu颗粒的含量：75重量％)
实施例4：使用Ag颗粒代替Cu颗粒
实施例5：在Cu颗粒的表面上有Sn镀层
实施例6：焊料粉SAC305和Sn-Bi颗粒的混合组成
实施例7：改变了助熔剂的组成比例
实施例8：混合了两种类型的环氧树脂
实施例9：改变了金属和助熔剂的混合比例
对比例1：Cu颗粒的含量过小(Cu颗粒的含量：50重量％)
对比例2：Cu颗粒的含量过大(Cu颗粒的含量：80重量％)
对比例3：无环氧树脂
评价结果示于图4和图5中。基于图4和图5中的结果，在实施例1至9中，没有发生260℃下的再熔化并且没有发生晶须。在实施例1至9中，作为剪切强度，获得了14.6至17.0[N]的有利强度。与这些实施例不同，在其中Cu颗粒的组成比例为50质量％的对比例1中，由于Cu颗粒的组成比例低，因而观察到了由于回流后残留焊料材料SAC305(Sn)所致的晶须的发生。
另外，在其中Cu颗粒的组成比例为80质量％的对比例2中，由于焊料材料SAC305不够，因而剪切强度显著减小。另外，在其中Cu颗粒的比例较大并且助熔剂组成中不含环氧树脂的对比例3中，由于助熔剂树脂不经热固化，因而观察到剪切强度的减小。
当高熔点金属颗粒(Cu颗粒)在高熔点金属颗粒(Cu颗粒)和低熔点金属颗粒(焊料材料SAC305)的总质量中的质量比例为55％(实施例2)至75％(实施例3)时，获得了有利的结果。特别地，当高熔点金属颗粒(Cu颗粒)的质量比例为65％(实施例1、4至9)至75％(实施例3)时，获得了有利的结果。
将描述与结合实施例描述的技术相关的需要注意的点。上文的描述中描述的金属符号含义如下。Cu：铜，Sn：锡，Al：铝，Au：金，Ag：银，Bi：铋，In：铟，Zn：锌。
虽然上文已详细描述了本发明的具体实施例，但这些仅是示例，并不限制权利要求的范围。在权利要求的范围内描述的技术包括上面例举的具体实施例的各种修改和替换。本说明书或附图中描述的技术要素单独地或以各种组合呈现技术有用性，并且不限于在提交本申请时在权利要求中描述的组合。另外，本说明书和附图中例举的技术可同时实现多个目的，并且在当实现其中的一个目的时本身具有技术实用性。

Claims (6)

1.一种接合材料，其特征在于包含：
高熔点金属颗粒；
低熔点金属颗粒，其熔点低于所述高熔点金属颗粒的熔点；和
热固性助熔剂树脂，
其中相对于所述高熔点金属颗粒与所述低熔点金属颗粒的总质量，所述高熔点金属颗粒的质量比例为55％至75％。
2.根据权利要求1所述的接合材料，其特征在于所述高熔点金属颗粒的质量比例为65％至75％。
3.根据权利要求1或2所述的接合材料，其特征在于所述高熔点金属颗粒为Cu、Cu合金、Al、Ag和Au中的任一者，并且具有5μm至30μm的粒径。
4.根据权利要求1至3中任一项所述的接合材料，其特征在于所述低熔点金属颗粒为Sn合金并且具有20μm至40μm的粒径。
5.根据权利要求1至3中任一项所述的接合材料，其特征在于所述高熔点金属颗粒的表面镀覆有Sn或Sn合金。
6.根据权利要求1至5中任一项所述的接合材料，其特征在于所述助熔剂树脂包括环氧树脂。
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