CN109495098A - Compact electronic switch driving circuit - Google Patents
Compact electronic switch driving circuit Download PDFInfo
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- CN109495098A CN109495098A CN201810728802.2A CN201810728802A CN109495098A CN 109495098 A CN109495098 A CN 109495098A CN 201810728802 A CN201810728802 A CN 201810728802A CN 109495098 A CN109495098 A CN 109495098A
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- edge detection
- driving
- detection unit
- conversion unit
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/689—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit
- H03K17/691—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit using transformer coupling
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K5/13—Arrangements having a single output and transforming input signals into pulses delivered at desired time intervals
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0036—Means reducing energy consumption
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0081—Power supply means, e.g. to the switch driver
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Electronic Switches (AREA)
- Amplifiers (AREA)
Abstract
The present invention discloses a kind of compact electronic switch driving circuit, comprising: square-wave generator, low level edge detection unit, high level edge detection unit, positive pulse level conversion unit, negative pulse level conversion unit, positive pulse driving branch, negative pulse drive branch；Square-wave generator for generating triggering square-wave signal is connected to low level edge detection unit and the respective input terminal of high level edge detection unit；The positive pulse driving branch, negative pulse driving branch are made of the small signal element of the driving being sequentially connected in series, power pipe unit and main circuit taking energy unit, and the positive pulse level conversion unit, negative pulse level conversion unit are made of push-pull circuit, high-voltage MOS pipe, acceleration network unit, coupling transformer.The present invention reduces electronic switch driving circuit volumes, and accelerate electronic switch rising front, and power needed for electronic switch driving circuit substantially reduces, and are especially suitable for array MOSFET electronic switch.
Description
Technical field
The invention belongs to power electronic devices applied technical field more particularly to a kind of compact electronic switch driving electricity
Road.
Background technique
It minimizes any pulsewidth MOSFET electronic switch and mostly uses active transformer coupled modes.This driving circuit principle
Although Pulse of Arbitrary width can be realized, it is not suitable for array MOSFET electronic switch.The reason is that this driving
Isolated power supply substantial amounts needed for circuit are difficult to realize Miniaturization Design.Above-mentioned technical problem how is overcome to become this field skill
The direction that art personnel make great efforts.
Summary of the invention
It is an object of the present invention to provide a kind of compact electronic switch driving circuits, which can
Any width for realizing driving pulse, without a large amount of isolated power supplies, driving circuit volume very little, driving power power is minimum.
In order to achieve the above objectives, the technical solution adopted by the present invention is that: a kind of compact electronic switch driving circuit, packet
It includes: square-wave generator, low level edge detection unit, high level edge detection unit, positive pulse level conversion unit, negative pulse
Level conversion unit, positive pulse driving branch, negative pulse drive branch；Square-wave generator for generating triggering square-wave signal connects
It is connected to low level edge detection unit and the respective input terminal of high level edge detection unit, the low level edge detection unit
It is sequentially connected with negative pulse level conversion unit and negative pulse driving branch, the high level edge detection unit and positive pulse electricity
Flat converting unit and positive pulse driving branch are sequentially connected；
The high level edge detection unit further comprise be sequentially connected in series first with door, high level derivative module, first non-
Door and the second NOT gate, this first connect with an input terminal of door with square-wave generator, another input terminal and sets between being grounded
It is equipped with first capacitor, second NOT gate is connect with positive pulse level conversion unit；
The low level edge detection unit further comprise be sequentially connected in series it is second non-with door, low level derivative module, third
Door and the 4th NOT gate, this second and one of door the 5th NOT gate is provided between input terminal and square-wave generator, another input
It is provided with the second capacitor between end and ground connection, the 4th NOT gate is connect with negative pulse level conversion unit；
The positive pulse driving branch, negative pulse driving branch are by the small signal element of the driving being sequentially connected in series, power pipe unit
It is formed with main circuit taking energy unit, the coupling transformer primary side and primary side are respectively provided with a primary coil and at least 2
A secondary coil, this at least two secondary coil are further divided at least one VTpSecondary coil and at least one VTnSecondary coil；
It is described that the primary coil of network unit and coupling transformer is accelerated to be connected in series, the V of coupling transformerTpSecondary coil and
VTnSecondary coil is all connected in the small signal element of driving of corresponding driving branch；
The small signal element of the driving further comprise filter module, metal-oxide-semiconductor and between filter module, metal-oxide-semiconductor first
Diode, this filter module are connect with VTn secondary coil, and the grid and source electrode of this metal-oxide-semiconductor are electric with the height of VTp secondary coil respectively
Position output end is connected with low potential output end；
The main circuit taking energy unit further comprises storage capacitance, the second diode and 2 concatenated current-limiting resistances, described to deposit
Storage is held to be connect with the drain electrode for the metal-oxide-semiconductor for driving small signal element, and second diode is located at 2 concatenated current-limiting resistances
Between contact and metal-oxide-semiconductor and the contact of storage capacitance, the source electrode of the metal-oxide-semiconductor of small signal element is driven to be connected in power pipe unit
The anode and cathode of the grid of power tube, the drain electrode of the power pipe unit and source electrode respectively as main circuit；
The positive pulse level conversion unit, negative pulse level conversion unit are by push-pull circuit, high-voltage MOS pipe, acceleration network
Unit, coupling transformer composition；The push-pull circuit includes the first power MOS pipe, the second power MOS pipe and third power MOS
Pipe, the second power MOS pipe and third power MOS tube parallel, the first power MOS pipe and the second power MOS pipe and third power MOS
Pipe series connection.
Due to the above technical solutions, the present invention has the following advantages over the prior art:
Compact electronic switch driving circuit of the present invention, can realize any width of driving pulse, be not necessarily to a large amount of isolated power supplies,
Driving circuit volume very little, driving power power are minimum；Power supply substantially reduces, and power very little, this driving
The core of circuit design: firstly, the lead and trail edges of detection trigger signal, provide foundation for pulse width control；Secondly, utilizing
Main circuit is the energy storage of driving circuit capacitor, so as to save isolated power supply；And using from coupling transformer and main circuit
Dipulse injecting power before and after taking energy unit is not necessarily to additional power supply, had both greatly reduced electronic switch driving circuit volume,
Electronic switch rising front is accelerated again, and power needed for electronic switch driving circuit substantially reduces, and is especially suitable for array MOSFET
Electronic switch.
Detailed description of the invention
Attached drawing 1 is compact electronic switch driving circuit partial structural diagram of the present invention；
Attached drawing 2 is each point voltage oscillogram of the present invention；
Attached drawing 3 is positive pulse level shifting circuit structural schematic diagram of the present invention；
Attached drawing 4 is negative pulse level shifting circuit structural schematic diagram of the present invention；
Attached drawing 5 is power energy system of the present invention and power unit structure schematic diagram.
In the figures above: 1, square-wave generator；2, low level edge detection unit；3, high level edge detection unit；4,
Positive pulse level conversion unit；5, negative pulse level conversion unit；6, positive pulse drives branch；7, negative pulse drives branch；81,
First and door；82, high level derivative module；83, the first NOT gate；84, the second NOT gate；85, first capacitor；91, second and door；
92, low level derivative module；93, third NOT gate；94, the 4th NOT gate；95, the 5th NOT gate；96, the second capacitor；10, electricity is recommended
Road；101, the first power MOS pipe；102, push-pull circuit；103, push-pull circuit；11, high-voltage MOS pipe；12, accelerate network unit；
13, coupling transformer；14, small signal element is driven；141, filter module；142, metal-oxide-semiconductor；143, first diode；15, power
Pipe unit；151, power tube；16, main circuit taking energy unit；161, storage capacitance；162, the second diode；163, current-limiting resistance.
Specific embodiment
The invention will be further described with reference to the accompanying drawings and embodiments:
A kind of embodiment 1: compact electronic switch driving circuit, comprising: square-wave generator 1, low level edge detection unit 2,
High level edge detection unit 3, positive pulse level conversion unit 4, negative pulse level conversion unit 5, positive pulse driving branch 6,
Negative pulse drives branch 7；Square-wave generator 1 for generating triggering square-wave signal is connected to 2 He of low level edge detection unit
The respective input terminal of high level edge detection unit 3, the low level edge detection unit 2 and negative pulse level conversion unit 5
It is sequentially connected with negative pulse driving branch 7, the high level edge detection unit 3 and positive pulse level conversion unit 4 and Zheng Mai
Punching driving branch 6 is sequentially connected；
The high level edge detection unit 3 further comprise be sequentially connected in series first with door 81, high level derivative module 82, the
One NOT gate 83 and the second NOT gate 84, this first connect with an input terminal of door 81 with square-wave generator 1, another input terminal with
First capacitor 85 is provided between ground connection, second NOT gate 84 is connect with positive pulse level conversion unit 4；
The low level edge detection unit 2 further comprise be sequentially connected in series second with door 91, low level derivative module 92, the
Three NOT gates 93 and the 4th NOT gate 94, this second and the input terminal and square-wave generator 1 of door 91 between be provided with the 5th NOT gate
95, the second capacitor 96, the 4th NOT gate 94 and negative pulse level conversion unit 5 are provided between another input terminal and ground connection
Connection；
The positive pulse driving branch 6, negative pulse driving branch 7 are by the small signal element 14 of the driving being sequentially connected in series, power tube
Unit 15 and main circuit taking energy unit 16 form, and 4 primary side of coupling transformer and primary side are respectively provided with a primary line
Circle and at least two secondary coil, this at least two secondary coil are further divided at least one VTpSecondary coil and at least one VTn
Secondary coil；
It is described that the primary coil of network unit 12 and coupling transformer 13 is accelerated to be connected in series, the V of coupling transformer 13TpIt is secondary
Coil and VTnSecondary coil is all connected in the small signal element 14 of driving of corresponding driving branch；
The small signal element 14 of the driving further comprises filter module 141, metal-oxide-semiconductor 142 and is located at filter module 141, metal-oxide-semiconductor
First diode 143 between 142, this filter module 141 are connect with VTn secondary coil, the grid and source electrode of this metal-oxide-semiconductor 142
It is connect respectively with the high-potential output end of VTp secondary coil and low potential output end；
The main circuit taking energy unit 16 further comprises storage capacitance 161, the concatenated current limliting electricity of the second diode 162 and 2
Resistance 163, the storage capacitance 91 are connect with the drain electrode for the metal-oxide-semiconductor 72 for driving small signal element 7, and second diode 92 is located at
Between the contact and metal-oxide-semiconductor 72 and the contact of storage capacitance of 2 concatenated current-limiting resistances 93, the metal-oxide-semiconductor of small signal element 5 is driven
Source electrode be connected to the grid of power tube 81 in power pipe unit 8, the drain electrode of the power pipe unit 8 and source electrode are respectively as master
The anode and cathode of circuit.
Above-mentioned positive pulse level conversion unit 4, negative pulse level conversion unit 5 are by push-pull circuit 10, high-voltage MOS pipe
11, network unit 12, coupling transformer 13 is accelerated to form.
Above-mentioned push-pull circuit 10 includes the first power MOS pipe 101, the second power MOS pipe 102 and third power MOS pipe
103, the second power MOS pipe 102 is in parallel with third power MOS pipe 103, the first power MOS pipe 101 and the second power MOS pipe 102
It connects with third power MOS pipe 103.
Turn-on and turn-off respectively represents power tube and turns on and off signal.The high level lasting time of the two point
The high level time and low level time of former driving signal TR are not reflected.Turn-on and turn-off pulse is respectively used to touch
Send out Tp11、Tp12、Tp21、Tp22And Tn11、Tn12, as shown in figs. 1 and 3.
Pulse of Arbitrary width also may be implemented in active transformer, and still, this scheme is not suitable for MOSFET array switch.
The reason is that this circuit needs a large amount of isolation power supply, the miniaturization of electronic switch is limited.
The present embodiment has unique advantage in the application that array electronic switchs (there are many power device series connection number).It is not
Any pulsewidth driving power can be only provided for electronic switch grid, but also be not necessarily to isolated power supply.The drive of this electronic switch
Energy stores energy from capacitor of the main circuit to capacitor Ck1 and Ck2.
Embodiment 2: a kind of compact electronic switch driving circuit, comprising: square-wave generator 1, low level edge detection list
Member 2, high level edge detection unit 3, positive pulse level conversion unit 4, negative pulse level conversion unit 5, positive pulse driving branch
Road 6, negative pulse drive branch 7；Square-wave generator 1 for generating triggering square-wave signal is connected to low level edge detection unit
2 and the respective input terminal of high level edge detection unit 3, the low level edge detection unit 2 and negative pulse level conversion list
Member 5 and negative pulse driving branch 7 are sequentially connected, the high level edge detection unit 3 and positive pulse level conversion unit 4 and just
Pulsed drive branch 6 is sequentially connected；
The high level edge detection unit 3 further comprise be sequentially connected in series first with door 81, high level derivative module 82, the
One NOT gate 83 and the second NOT gate 84, this first connect with an input terminal of door 81 with square-wave generator 1, another input terminal with
First capacitor 85 is provided between ground connection, second NOT gate 84 is connect with positive pulse level conversion unit 4；
The low level edge detection unit 2 further comprise be sequentially connected in series second with door 91, low level derivative module 92, the
Three NOT gates 93 and the 4th NOT gate 94, this second and the input terminal and square-wave generator 1 of door 91 between be provided with the 5th NOT gate
95, the second capacitor 96, the 4th NOT gate 94 and negative pulse level conversion unit 5 are provided between another input terminal and ground connection
Connection；
The positive pulse driving branch 6, negative pulse driving branch 7 are by the small signal element 14 of the driving being sequentially connected in series, power tube
Unit 15 and main circuit taking energy unit 16 form, and 4 primary side of coupling transformer and primary side are respectively provided with a primary line
Circle and at least two secondary coil, this at least two secondary coil are further divided at least one VTpSecondary coil and at least one VTn
Secondary coil；
It is described that the primary coil of network unit 12 and coupling transformer 13 is accelerated to be connected in series, the V of coupling transformer 13TpIt is secondary
Coil and VTnSecondary coil is all connected in the small signal element 14 of driving of corresponding driving branch；
The small signal element 14 of the driving further comprises filter module 141, metal-oxide-semiconductor 142 and is located at filter module 141, metal-oxide-semiconductor
First diode 143 between 142, this filter module 141 are connect with VTn secondary coil, the grid and source electrode of this metal-oxide-semiconductor 142
It is connect respectively with the high-potential output end of VTp secondary coil and low potential output end；
The main circuit taking energy unit 16 further comprises storage capacitance 161, the concatenated current limliting electricity of the second diode 162 and 2
Resistance 163, the storage capacitance 91 are connect with the drain electrode for the metal-oxide-semiconductor 72 for driving small signal element 7, and second diode 92 is located at
Between the contact and metal-oxide-semiconductor 72 and the contact of storage capacitance of 2 concatenated current-limiting resistances 93, the metal-oxide-semiconductor of small signal element 5 is driven
Source electrode be connected to the grid of power tube 81 in power pipe unit 8, the drain electrode of the power pipe unit 8 and source electrode are respectively as master
The anode and cathode of circuit.
Power tube 151 in above-mentioned power pipe unit 15 is made of the first power MOS pipe and the second power MOS tube parallel.
Above-mentioned positive pulse level conversion unit 4, negative pulse level conversion unit 5 are by push-pull circuit 10, high-voltage MOS pipe
11, network unit 12, coupling transformer 13 is accelerated to form.
Turn-on and turn-off respectively represents power tube and turns on and off signal.The high level lasting time of the two point
The high level time and low level time of former driving signal TR are not reflected.Turn-on and turn-off pulse is respectively used to touch
Send out Tp11、Tp12、Tp21、Tp22And Tn11、Tn12, as shown in figs. 1 and 3.
Pulse of Arbitrary width also may be implemented in active transformer, and still, this scheme is not suitable for MOSFET array switch.
The reason is that this circuit needs a large amount of isolation power supply, the miniaturization of electronic switch is limited.
The present embodiment has unique advantage in the application that array electronic switchs (there are many power device series connection number).It is not
Any pulsewidth driving power can be only provided for electronic switch grid, but also be not necessarily to isolated power supply.The drive of this electronic switch
Energy stores energy from capacitor of the main circuit to capacitor Ck1 and Ck2.
When using above-mentioned compact electronic switch driving circuit, power supply substantially reduces, and power very little.
The core of this driving circuit design: firstly, the lead and trail edges of detection trigger signal, provide foundation for pulse width control；
Secondly, being the energy storage of driving circuit capacitor using main circuit, so as to save isolated power supply；And using from coupling transformer
With dipulse injecting power before and after main circuit taking energy unit, it is not necessarily to additional power supply, had both greatly reduced electronic switch driving
Circuit volume, and electronic switch rising front is accelerated, power needed for electronic switch driving circuit substantially reduces, and is especially suitable for battle array
Arrange MOSFET electronic switch.
The above embodiments merely illustrate the technical concept and features of the present invention, and its object is to allow person skilled in the art
Scholar cans understand the content of the present invention and implement it accordingly, and it is not intended to limit the scope of the present invention.It is all according to the present invention
Equivalent change or modification made by Spirit Essence, should be covered by the protection scope of the present invention.
Claims (1)
1. a kind of compact electronic switch driving circuit, it is characterised in that: include: square-wave generator (1), low level edge detection
Unit (2), high level edge detection unit (3), positive pulse level conversion unit (4), negative pulse level conversion unit (5), just
Pulsed drive branch (6), negative pulse driving branch (7)；Square-wave generator (1) for generating triggering square-wave signal is connected to low
Level edge detection unit (2) and high level edge detection unit (3) respective input terminal, the low level edge detection unit
(2) it is sequentially connected with negative pulse level conversion unit (5) and negative pulse driving branch (7), the high level edge detection unit
(3) it is sequentially connected with positive pulse level conversion unit (4) and positive pulse driving branch (6)；
The high level edge detection unit (3) further comprises first be sequentially connected in series and door (81), high level derivative module
(82), the first NOT gate (83) and the second NOT gate (84), this first input terminal and square-wave generator (1) company with door (81)
It connects, is provided with first capacitor (85) between another input terminal and ground connection, second NOT gate (84) and positive pulse level conversion
Unit (4) connection；
The low level edge detection unit (2) further comprises second be sequentially connected in series and door (91), low level derivative module
(92), third NOT gate (93) and the 4th NOT gate (94), this second and the input terminal and square-wave generator (1) of door (91) between
It is provided with the 5th NOT gate (95), is provided with the second capacitor (96) between another input terminal and ground connection, the 4th NOT gate (94)
It is connect with negative pulse level conversion unit (5)；
Positive pulse driving branch (6), negative pulse driving branch (7) by the small signal element of the driving being sequentially connected in series (14),
Power pipe unit (15) and main circuit taking energy unit (16) composition, coupling transformer (4) primary side and primary side have respectively
There are a primary coil and at least two secondary coil, this at least two secondary coil is further divided at least one VTpSecondary coil
With at least one VTnSecondary coil；
The primary coil for accelerating network unit (12) and coupling transformer (13) is connected in series, the V of coupling transformer (13)Tp
Secondary coil and VTnSecondary coil is all connected in the small signal element of driving (14) of corresponding driving branch；
The small signal element (14) of the driving further comprises filter module (141), metal-oxide-semiconductor (142) and is located at filter module
(141), the first diode (143) between metal-oxide-semiconductor (142), this filter module (141) are connect with VTn secondary coil, this MOS
The grid and source electrode for managing (142) are connect with the high-potential output end of VTp secondary coil and low potential output end respectively；
The main circuit taking energy unit (16) further comprises that storage capacitance (161), the second diode (162) and 2 are concatenated
Current-limiting resistance (163), the storage capacitance (91) connect with the drain electrode for the metal-oxide-semiconductor (72) for driving small signal element (7), and described the
Two diodes (92) are located between the contact and metal-oxide-semiconductor (72) and the contact of storage capacitance of 2 concatenated current-limiting resistances (93), drive
The source electrode for moving the metal-oxide-semiconductor of small signal element (5) is connected to the grid of power tube (81) in power pipe unit (8), the power tube
The anode and cathode of the drain electrode of unit (8) and source electrode respectively as main circuit；
The positive pulse level conversion unit (4), negative pulse level conversion unit (5) are by push-pull circuit (10), high-voltage MOS pipe
(11), accelerate network unit (12), coupling transformer (13) composition；The push-pull circuit (10) includes the first power MOS pipe
(101), the second power MOS pipe (102) and third power MOS pipe (103), the second power MOS pipe (102) and third power MOS
(103) parallel connection is managed, the first power MOS pipe (101) is connected with the second power MOS pipe (102) and third power MOS pipe (103).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810728802.2A CN109495098B (en) | 2016-08-30 | 2016-08-30 | Compact electronic switch driving circuit |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610763775.3A CN106208631B (en) | 2016-08-30 | 2016-08-30 | Any pulsewidth MOSFET electronic switch driving circuit |
| CN201810728802.2A CN109495098B (en) | 2016-08-30 | 2016-08-30 | Compact electronic switch driving circuit |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610763775.3A Division CN106208631B (en) | 2016-08-30 | 2016-08-30 | Any pulsewidth MOSFET electronic switch driving circuit |
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| Publication Number | Publication Date |
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| CN109495098A true CN109495098A (en) | 2019-03-19 |
| CN109495098B CN109495098B (en) | 2022-07-19 |
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| CN201810728801.8A Active CN109495099B (en) | 2016-08-30 | 2016-08-30 | Arbitrary pulse width type low power electronic switch |
| CN201810728802.2A Active CN109495098B (en) | 2016-08-30 | 2016-08-30 | Compact electronic switch driving circuit |
| CN201610763775.3A Active CN106208631B (en) | 2016-08-30 | 2016-08-30 | Any pulsewidth MOSFET electronic switch driving circuit |
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| CN201610763775.3A Active CN106208631B (en) | 2016-08-30 | 2016-08-30 | Any pulsewidth MOSFET electronic switch driving circuit |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111654193A (en) * | 2019-07-26 | 2020-09-11 | 广州金升阳科技有限公司 | Drive control method and circuit thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108540117A (en) * | 2018-03-14 | 2018-09-14 | 湖北楚航电子科技有限公司 | A kind of high power PIN RF switch driving circuits |
| CN112713760B (en) * | 2020-12-01 | 2022-03-04 | 北京无线电测量研究所 | Parallel redundant ferrite switch driver |
| CN113556108A (en) * | 2021-06-21 | 2021-10-26 | 成都天通电子科技有限公司 | Pulse modulator with any pulse width |
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| CN206023568U (en) * | 2016-08-30 | 2017-03-15 | 苏州泰思特电子科技有限公司 | Any pulsewidth MOSFET electronic switch drive circuit |
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| CN105897235A (en) * | 2016-05-03 | 2016-08-24 | 苏州泰思特电子科技有限公司 | SCR electronic switch for achieving synchronization of drive signals |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111654193A (en) * | 2019-07-26 | 2020-09-11 | 广州金升阳科技有限公司 | Drive control method and circuit thereof |
| CN111654193B (en) * | 2019-07-26 | 2021-10-22 | 广州金升阳科技有限公司 | Drive control method and circuit thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109495099B (en) | 2022-06-21 |
| CN109495099A (en) | 2019-03-19 |
| CN106208631A (en) | 2016-12-07 |
| CN106208631B (en) | 2019-07-23 |
| CN109495098B (en) | 2022-07-19 |
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