CN109495099B - Arbitrary pulse width type low power electronic switch - Google Patents
Arbitrary pulse width type low power electronic switch Download PDFInfo
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- CN109495099B CN109495099B CN201810728801.8A CN201810728801A CN109495099B CN 109495099 B CN109495099 B CN 109495099B CN 201810728801 A CN201810728801 A CN 201810728801A CN 109495099 B CN109495099 B CN 109495099B
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/689—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit
- H03K17/691—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit using transformer coupling
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K5/13—Arrangements having a single output and transforming input signals into pulses delivered at desired time intervals
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0036—Means reducing energy consumption
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0081—Power supply means, e.g. to the switch driver
Abstract
The invention discloses a low-power electronic switch with any pulse width, which comprises: the device comprises a square wave generator, a low-level edge detection unit, a high-level edge detection unit, a positive pulse level conversion unit, a negative pulse level conversion unit, a positive pulse drive branch and a negative pulse drive branch; a square wave generator for generating a trigger square wave signal is connected to respective input ends of the low-level edge detection unit and the high-level edge detection unit; the positive pulse driving branch and the negative pulse driving branch are composed of a driving small signal unit, a power tube unit and a main circuit energy taking unit which are sequentially connected in series, and the primary side and the secondary side of the coupling transformer are respectively provided with a primary coil and at least 2 secondary coils. The invention can realize any width of the driving pulse, does not need a large amount of isolated power supplies, and has small volume of a driving circuit and small power of the driving power supply.
Description
Technical Field
The invention belongs to the technical field of power electronic device application, and particularly relates to a low-power electronic switch with any pulse width.
Background
The miniaturized MOSFET electronic switch with any pulse width mostly adopts an active transformer coupling mode. This drive circuit principle, while capable of achieving arbitrary pulse widths, is not suitable for array MOSFET electronic switches. The reason for this is that the number of isolation power supplies required for such a drive circuit is large, and it is difficult to realize a small-sized design. How to overcome the above technical problems has been the direction of efforts of those skilled in the art.
Disclosure of Invention
The invention aims to provide an arbitrary pulse width type low-power electronic switch, which can realize arbitrary width of driving pulse, does not need a large amount of isolated power supplies, and has small volume of a driving circuit and extremely small power of the driving power supply.
In order to achieve the purpose, the invention adopts the technical scheme that: an arbitrary pulse width type low power electronic switch comprising: the device comprises a square wave generator, a low-level edge detection unit, a high-level edge detection unit, a positive pulse level conversion unit, a negative pulse level conversion unit, a positive pulse drive branch and a negative pulse drive branch; a square wave generator for generating trigger square wave signals is connected to respective input ends of a low-level edge detection unit and a high-level edge detection unit, the low-level edge detection unit is sequentially connected with a negative pulse level conversion unit and a negative pulse driving branch, and the high-level edge detection unit is sequentially connected with a positive pulse level conversion unit and a positive pulse driving branch;
the high-level edge detection unit further comprises a first AND gate, a high-level differential module, a first NOT gate and a second NOT gate which are sequentially connected in series, one input end of the first AND gate is connected with the square wave generator, a first capacitor is arranged between the other input end of the first AND gate and the ground, and the second NOT gate is connected with the positive pulse level conversion unit;
the low-level edge detection unit further comprises a second AND gate, a low-level differential module, a third NOT gate and a fourth NOT gate which are sequentially connected in series, a fifth NOT gate is arranged between one input end of the second AND gate and the square wave generator, a second capacitor is arranged between the other input end of the second AND gate and the ground, and the fourth NOT gate is connected with the negative pulse level conversion unit;
the positive pulse driving branch and the negative pulse driving branch are composed of a driving small signal unit, a power tube unit and a main circuit energy taking unit which are sequentially connected in series, the primary side and the secondary side of the coupling transformer are respectively provided with a primary coil and at least 2 secondary coils, and the at least 2 secondary coils are further divided into at least 1VTpSecondary coil and at least 1VTnA secondary coil;
the accelerating network unit is connected with the primary coil of the coupling transformer in series, and the V of the coupling transformerTpSecondary coil and VTnThe secondary coils are connected to the small driving signal units of the corresponding driving branches;
the driving small signal unit further comprises a filtering module, an MOS (metal oxide semiconductor) tube and a first diode positioned between the filtering module and the MOS tube, the filtering module is connected with the VTn secondary coil, and the grid electrode and the source electrode of the MOS tube are respectively connected with the high potential output end and the low potential output end of the VTp secondary coil;
the main circuit energy taking unit further comprises a storage capacitor, a second diode and 2 series-connected current limiting resistors, wherein the storage capacitor is connected with a drain electrode of an MOS (metal oxide semiconductor) tube of the small signal driving unit, the second diode is positioned between a contact of the 2 series-connected current limiting resistors and a contact of the MOS tube and the storage capacitor, a source electrode of the MOS tube of the small signal driving unit is connected to a grid electrode of a power tube in the power tube unit, and the drain electrode and the source electrode of the power tube unit are respectively used as an anode and a cathode of the main circuit;
the power tube in the power tube unit is composed of a first power MOS tube and a second power MOS tube which are connected in parallel, and the positive pulse level conversion unit and the negative pulse level conversion unit are composed of a push-pull circuit, a high-voltage MOS tube, an acceleration network unit and a coupling transformer.
Due to the application of the technical scheme, compared with the prior art, the invention has the following advantages:
the low-power electronic switch with any pulse width can realize any width of a driving pulse, a large number of isolated power supplies are not needed, the volume of a driving circuit is small, and the power of the driving power supply is extremely low; the power supply is greatly reduced, and the power supply power is very small, and the core of the design of the driving circuit is as follows: firstly, detecting the leading edge and the trailing edge of a trigger signal to provide a basis for pulse width control; secondly, the main circuit is used for storing energy for a capacitor of the driving circuit, so that an isolation power supply can be omitted; and the front and back double-pulse injection power from the coupling transformer and the main circuit energy taking unit is adopted, and no additional power supply is needed, so that the volume of the electronic switch driving circuit is greatly reduced, the rising front edge of the electronic switch is accelerated, the power required by the electronic switch driving circuit is greatly reduced, and the array MOSFET electronic switch is particularly suitable for array MOSFET electronic switches.
Drawings
FIG. 1 is a schematic diagram of a local structure of an arbitrary pulse width type low power electronic switch according to the present invention;
FIG. 2 is a graph of voltage waveforms at various points in accordance with the present invention;
FIG. 3 is a schematic diagram of a positive pulse level shift circuit according to the present invention;
FIG. 4 is a schematic diagram of a negative pulse level shift circuit according to the present invention;
fig. 5 is a schematic structural diagram of a power energy system and a power device according to the present invention.
In the above drawings: 1. a square wave generator; 2. a low level edge detection unit; 3. a high level edge detection unit; 4. a positive pulse level conversion unit; 5. a negative pulse level conversion unit; 6. a positive pulse driving branch; 7. the negative pulse drives the branch circuit; 81. a first AND gate; 82. a high level differential module; 83. a first not gate; 84. a second not gate; 85. a first capacitor; 91. a second AND gate; 92. a low level differential module; 93. a third not gate; 94. a fourth not gate; 95. a fifth not gate; 96. a second capacitor; 10. a push-pull circuit; 11. a high-voltage MOS tube; 12. an acceleration network element; 13. a coupling transformer; 14. driving the small signal unit; 141. a filtering module; 142. an MOS tube; 143. a first diode; 15. a power tube unit; 151. a power tube; 16. a main circuit energy taking unit; 161. a storage capacitor; 162. a second diode; 163. a current limiting resistor.
Detailed Description
The invention is further described with reference to the following figures and examples:
example 1: an arbitrary pulse width type low power electronic switch comprising: the device comprises a square wave generator 1, a low-level edge detection unit 2, a high-level edge detection unit 3, a positive pulse level conversion unit 4, a negative pulse level conversion unit 5, a positive pulse driving branch 6 and a negative pulse driving branch 7; a square wave generator 1 for generating a trigger square wave signal is connected to respective input ends of a low level edge detection unit 2 and a high level edge detection unit 3, the low level edge detection unit 2 is sequentially connected with a negative pulse level conversion unit 5 and a negative pulse driving branch 7, and the high level edge detection unit 3 is sequentially connected with a positive pulse level conversion unit 4 and a positive pulse driving branch 6;
the high-level edge detection unit 3 further comprises a first and gate 81, a high-level differential module 82, a first not gate 83 and a second not gate 84 which are sequentially connected in series, one input end of the first and gate 81 is connected with the square wave generator 1, a first capacitor 85 is arranged between the other input end of the first and gate and the ground, and the second not gate 84 is connected with the positive pulse level conversion unit 4;
the low-level edge detection unit 2 further comprises a second and gate 91, a low-level differential module 92, a third not gate 93 and a fourth not gate 94 which are sequentially connected in series, a fifth not gate 95 is arranged between one input end of the second and gate 91 and the square-wave generator 1, a second capacitor 96 is arranged between the other input end of the second and gate and the ground, and the fourth not gate 94 is connected with the negative pulse level conversion unit 5;
the positive pulse driving branch circuit 6 and the negative pulse driving branch circuit 7 are respectively composed of a driving small signal unit 14, a power tube unit 15 and a main circuit energy taking unit 16 which are sequentially connected in series, the primary side and the secondary side of the coupling transformer 13 are respectively provided with a primary coil and at least 2 secondary coils, and the at least 2 secondary coils are further divided into at least 1VTpSecondary coil and at least 1VTnA secondary coil;
the accelerating network unit 12 is connected in series with the primary winding of the coupling transformer 13, the V of the coupling transformer 13TpSecondary coil and VTnThe secondary coils are connected to the driving small signal units 14 of the corresponding driving branches;
the driving small signal unit 14 further includes a filtering module 141, an MOS transistor 142, and a first diode 143 disposed between the filtering module 141 and the MOS transistor 142, the filtering module 141 is connected to the secondary VTn coil, and a gate and a source of the MOS transistor 142 are respectively connected to the high potential output terminal and the low potential output terminal of the secondary VTp coil;
the main circuit energy-taking unit 16 further includes a storage capacitor 161, a second diode 162 and 2 series-connected current-limiting resistors 163, the storage capacitor 161 is connected to the drain of the MOS transistor 142 of the driving small signal unit 14, the second diode 162 is located between the junction of the 2 series-connected current-limiting resistors 163 and the junction of the MOS transistor 142 and the storage capacitor, the source of the MOS transistor of the driving small signal unit 14 is connected to the gate of the power transistor 151 in the power transistor unit 15, and the drain and the source of the power transistor unit 15 are respectively used as the positive pole and the negative pole of the main circuit.
The positive pulse level conversion unit 4 and the negative pulse level conversion unit 5 are both composed of a push-pull circuit 10, a high-voltage MOS tube 11, an acceleration network unit 12 and a coupling transformer 13.
The push-pull circuit 10 includes a first power MOS transistor, a second power MOS transistor, and a third power MOS transistor, where the second power MOS transistor is connected in parallel with the third power MOS transistor, and the first power MOS transistor is connected in series with the second power MOS transistor and the third power MOS transistor.
turn-on and turn-off represent the power tube turn-on and turn-off signals, respectively. The high level duration of the two signals respectively reflects the high level time and the low level time of the original driving signal TR. Turn-on and turn-off pulses are used to trigger Tp, respectively11、Tp12、Tp21、Tp22And Tn11、Tn12As shown in fig. 1 and 3.
Active transformers can also achieve arbitrary pulse widths, but this solution is not suitable for MOSFET array switches. The reason is that such circuits require a large number of isolated power supplies, limiting the miniaturization of electronic switches.
This embodiment is particularly advantageous in applications where the array electronic switch (power devices are in large series). The pulse width driving circuit can provide any pulse width driving power for the grid electrode of the electronic switch, and does not need an isolation power supply. The driving energy of such electronic switches comes from the capacitor stored energy of the main circuit pair capacitors Ck1 and Ck 2.
Example 2: an arbitrary pulse width type low power electronic switch comprising: the device comprises a square wave generator 1, a low-level edge detection unit 2, a high-level edge detection unit 3, a positive pulse level conversion unit 4, a negative pulse level conversion unit 5, a positive pulse driving branch 6 and a negative pulse driving branch 7; a square wave generator 1 for generating a trigger square wave signal is connected to respective input ends of a low level edge detection unit 2 and a high level edge detection unit 3, the low level edge detection unit 2 is sequentially connected with a negative pulse level conversion unit 5 and a negative pulse driving branch 7, and the high level edge detection unit 3 is sequentially connected with a positive pulse level conversion unit 4 and a positive pulse driving branch 6;
the high-level edge detection unit 3 further comprises a first and gate 81, a high-level differential module 82, a first not gate 83 and a second not gate 84 which are sequentially connected in series, one input end of the first and gate 81 is connected with the square wave generator 1, a first capacitor 85 is arranged between the other input end of the first and gate and the ground, and the second not gate 84 is connected with the positive pulse level conversion unit 4;
the low-level edge detection unit 2 further comprises a second and gate 91, a low-level differential module 92, a third not gate 93 and a fourth not gate 94 which are sequentially connected in series, a fifth not gate 95 is arranged between one input end of the second and gate 91 and the square-wave generator 1, a second capacitor 96 is arranged between the other input end of the second and gate and the ground, and the fourth not gate 94 is connected with the negative pulse level conversion unit 5;
the positive pulse driving branch circuit 6 and the negative pulse driving branch circuit 7 are respectively composed of a driving small signal unit 14, a power tube unit 15 and a main circuit energy taking unit 16 which are sequentially connected in series, the primary side and the secondary side of the coupling transformer 13 are respectively provided with a primary coil and at least 2 secondary coils, and the at least 2 secondary coils are further divided into at least 1VTpSecondary coil and at least 1VTnA secondary coil;
the accelerating network unit 12 is connected in series with the primary winding of the coupling transformer 13, the V of the coupling transformer 13TpSecondary coil and VTnThe secondary coils are connected to the driving small signal units 14 of the corresponding driving branches;
the driving small signal unit 14 further includes a filtering module 141, an MOS transistor 142, and a first diode 143 disposed between the filtering module 141 and the MOS transistor 142, the filtering module 141 is connected to the secondary VTn coil, and a gate and a source of the MOS transistor 142 are respectively connected to the high potential output terminal and the low potential output terminal of the secondary VTp coil;
the main circuit energy-taking unit 16 further includes a storage capacitor 161, a second diode 162 and 2 series-connected current-limiting resistors 163, the storage capacitor 161 is connected to the drain of the MOS transistor 142 of the driving small signal unit 14, the second diode 162 is located between the junction of the 2 series-connected current-limiting resistors 163 and the junction of the MOS transistor 142 and the storage capacitor, the source of the MOS transistor of the driving small signal unit 14 is connected to the gate of the power transistor 151 in the power transistor unit 15, and the drain and the source of the power transistor unit 15 are respectively used as the positive pole and the negative pole of the main circuit.
The power transistor 151 in the power transistor unit 15 is formed by connecting a first power MOS transistor and a second power MOS transistor in parallel.
The positive pulse level conversion unit 4 and the negative pulse level conversion unit 5 are both composed of a push-pull circuit 10, a high-voltage MOS tube 11, an acceleration network unit 12 and a coupling transformer 13.
turn-on and turn-off represent the power tube turn-on and turn-off signals, respectively. The high level duration of the two signals respectively reflects the high level time and the low level time of the original driving signal TR. Turn-on and turn-off pulses, respectively, are used to trigger Tp11、Tp12、Tp21、Tp22And Tn11、Tn12As shown in fig. 1 and 3.
Active transformers can also achieve arbitrary pulse widths, but this solution is not suitable for MOSFET array switches. The reason is that such circuits require a large number of isolated power supplies, limiting the miniaturization of electronic switches.
This embodiment is particularly advantageous in applications where the array electronic switch (power devices are in large series). The pulse width driving circuit can provide any pulse width driving power for the grid electrode of the electronic switch, and does not need an isolation power supply. The driving energy of such electronic switches comes from the capacitor stored energy of the main circuit pair capacitors Ck1 and Ck 2.
When the arbitrary pulse width type low-power electronic switch is adopted, the power supply of the arbitrary pulse width type low-power electronic switch is greatly reduced, and the power supply power is very low. The core of this drive circuit design: firstly, detecting the leading edge and the trailing edge of a trigger signal to provide a basis for pulse width control; secondly, the main circuit is used for storing energy for a capacitor of the driving circuit, so that an isolation power supply can be omitted; and the front and back double-pulse injection power from the coupling transformer and the main circuit energy taking unit is adopted, and no additional power supply is needed, so that the volume of the electronic switch driving circuit is greatly reduced, the rising front edge of the electronic switch is accelerated, the power required by the electronic switch driving circuit is greatly reduced, and the array MOSFET electronic switch is particularly suitable for array MOSFET electronic switches.
The above embodiments are merely illustrative of the technical ideas and features of the present invention, and the purpose thereof is to enable those skilled in the art to understand the contents of the present invention and implement the present invention, and not to limit the protection scope of the present invention. All equivalent changes and modifications made according to the spirit of the present invention should be covered within the protection scope of the present invention.
Claims (1)
1. An arbitrary pulse width type low power electronic switch, characterized by: the method comprises the following steps: the device comprises a square wave generator (1), a low-level edge detection unit (2), a high-level edge detection unit (3), a positive pulse level conversion unit (4), a negative pulse level conversion unit (5), a positive pulse drive branch (6) and a negative pulse drive branch (7); a square wave generator (1) for generating trigger square wave signals is connected to respective input ends of a low level edge detection unit (2) and a high level edge detection unit (3), the low level edge detection unit (2) is sequentially connected with a negative pulse level conversion unit (5) and a negative pulse driving branch circuit (7), and the high level edge detection unit (3) is sequentially connected with a positive pulse level conversion unit (4) and a positive pulse driving branch circuit (6);
the high-level edge detection unit (3) further comprises a first AND gate (81), a high-level differential module (82), a first NOT gate (83) and a second NOT gate (84) which are sequentially connected in series, one input end of the first AND gate (81) is connected with the square wave generator (1), a first capacitor (85) is arranged between the other input end of the first AND gate and the ground, and the second NOT gate (84) is connected with the positive pulse level conversion unit (4);
the low-level edge detection unit (2) further comprises a second AND gate (91), a low-level differential module (92), a third NOT gate (93) and a fourth NOT gate (94) which are sequentially connected in series, a fifth NOT gate (95) is arranged between one input end of the second AND gate (91) and the square wave generator (1), a second capacitor (96) is arranged between the other input end of the second AND gate and the ground, and the fourth NOT gate (94) is connected with the negative pulse level conversion unit (5);
the positive pulse driving branch (6) and the negative pulse driving branch (7) are respectively composed of a driving small signal unit (14), a power tube unit (15) and a main circuit energy taking unit (16) which are sequentially connected in series, the primary side and the secondary side of the coupling transformer (13) are respectively provided with a primary coil and at least 2 secondary coils, and the at least 2 secondary coils are further divided into at least 1VTpSecondary coil and at least 1VTnA secondary coil;
the accelerating network unit (12) is connected in series with the primary winding of the coupling transformer (13), the V of the coupling transformer (13)TpSecondary coil and VTnThe secondary coils are connected to the small driving signal units (14) of the corresponding driving branches;
the driving small signal unit (14) further comprises a filtering module (141), an MOS (metal oxide semiconductor) tube (142) and a first diode (143) positioned between the filtering module (141) and the MOS tube (142), the filtering module (141) is connected with the secondary coil of the VTn, and the grid electrode and the source electrode of the MOS tube (142) are respectively connected with the high potential output end and the low potential output end of the secondary coil of the VTp;
the main circuit energy taking unit (16) further comprises a storage capacitor (161), a second diode (162) and 2 series-connected current limiting resistors (163), wherein the storage capacitor (161) is connected with the drain electrode of the MOS (142) for driving the small signal unit (14), the second diode (162) is positioned between the connection point of the 2 series-connected current limiting resistors (163) and the connection point of the MOS (142) and the storage capacitor, the source electrode of the MOS for driving the small signal unit (14) is connected to the grid electrode of the power tube (151) in the power tube unit (15), and the drain electrode and the source electrode of the power tube unit (15) are respectively used as the positive electrode and the negative electrode of the main circuit;
the power tube (151) in the power tube unit (15) is formed by connecting a first power MOS tube and a second power MOS tube in parallel, and the positive pulse level conversion unit (4) and the negative pulse level conversion unit (5) are formed by a push-pull circuit (10), a high-voltage MOS tube (11), an acceleration network unit (12) and a coupling transformer (13).
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| CN201810728801.8A CN109495099B (en) | 2016-08-30 | 2016-08-30 | Arbitrary pulse width type low power electronic switch |
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| CN201610763775.3A CN106208631B (en) | 2016-08-30 | 2016-08-30 | Any pulsewidth MOSFET electronic switch driving circuit |
| CN201810728801.8A CN109495099B (en) | 2016-08-30 | 2016-08-30 | Arbitrary pulse width type low power electronic switch |
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| CN108540117A (en) * | 2018-03-14 | 2018-09-14 | 湖北楚航电子科技有限公司 | A kind of high power PIN RF switch driving circuits |
| CN110311572A (en) * | 2019-07-26 | 2019-10-08 | 广州金升阳科技有限公司 | A kind of transformer isolation drive control method and its isolated drive circuit |
| CN112713760B (en) * | 2020-12-01 | 2022-03-04 | 北京无线电测量研究所 | Parallel redundant ferrite switch driver |
| CN113556108A (en) * | 2021-06-21 | 2021-10-26 | 成都天通电子科技有限公司 | Pulse modulator with any pulse width |
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Also Published As
| Publication number | Publication date |
|---|---|
| CN109495098A (en) | 2019-03-19 |
| CN106208631B (en) | 2019-07-23 |
| CN109495098B (en) | 2022-07-19 |
| CN106208631A (en) | 2016-12-07 |
| CN109495099A (en) | 2019-03-19 |
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