CN207602978U - Semiconductor integrated circuit - Google Patents
Semiconductor integrated circuit Download PDFInfo
- Publication number
- CN207602978U CN207602978U CN201721836076.3U CN201721836076U CN207602978U CN 207602978 U CN207602978 U CN 207602978U CN 201721836076 U CN201721836076 U CN 201721836076U CN 207602978 U CN207602978 U CN 207602978U
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- field
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- resistance
- effect tube
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- Generation Of Surge Voltage And Current (AREA)
Abstract
The utility model discloses semiconductor integrated circuit, it is characterized in that, it includes sequence circuit, impulse circuit, switching circuit, semiconductor laser and charger, the output terminal of the sequence circuit is connected to the input terminal of impulse circuit, the output terminal of the impulse circuit is connected to an input terminal of switching circuit, the output terminal of the switching circuit is connected to the input terminal of charger, the output terminal of the charger is connected to the input terminal of semiconductor laser, and the output terminal of the semiconductor laser and another input terminal of switching circuit connect；The positive effect of the utility model is：The integrated circuit can generate that the rise time is small, and pulsewidth is relatively narrow, the larger driving voltage of voltage, and design is simple and practicable；Impulse circuit is equipped with charging and discharging circuit, and it is capacitances to supply power to control charger according to voltage, realizes the accurate control of impulse amplitude, and pulse by shutdown signal connects field-effect tube after exporting, extra electric energy in release circuit.
Description
Technical field
The utility model is related to semiconductor circuit field, specifically a kind of semiconductor integrated circuit.
Background technology
Semiconductor laser is also known as laser diode, is the semiconductor laser by the use of semi-conducting material as operation material.
The most practical most important a kind of semiconductor laser of semiconductor diode semiconductor laser.Its small, long lifespan, and can
Its operating voltage is pumped by the way of simple Injection Current and electric current is compatible with integrated circuit, thus can monolithic collection therewith
Into.And current-modulation can also be directly carried out with the up to frequency of GHz to obtain the output of the laser of High Speed Modulation.Due to these
Advantage, semiconductor diode semiconductor laser is in laser communication, optical storage, optical circulator, laser printing, ranging and radar etc.
It aspect and has been widely used.Semiconductor laser circuit is complicated in the prior art, efficiency is relatively low, thyratron transistor electricity
Road is relatively easy, but is susceptible to the limitation of switching circuit speed, obtains high current difficulty at low voltage and realizes.
Utility model content
Based on the above problem, the utility model implementation discloses semiconductor integrated circuit.
The utility model is to solve above-mentioned technical problem by following technical proposals：
Semiconductor integrated circuit, which is characterized in that it includes sequence circuit, impulse circuit, switching circuit, semiconductor laser
Device and charger, the output terminal of the sequence circuit are connected to the input terminal of impulse circuit, and the output terminal of the impulse circuit connects
An input terminal of switching circuit is connected to, the output terminal of the switching circuit is connected to the input terminal of charger, the charger
Output terminal be connected to the input terminal of semiconductor laser, the output terminal of the semiconductor laser and switching circuit it is another defeated
Enter end connection；
Wherein, the impulse circuit includes first resistor, and the first resistor is connect with one end of the first bilateral diode,
Grid of the first resistor also with the first field-effect tube is connect, and the drain electrode of first field-effect tube and one end of second resistance connect
Connect, the other end of the source electrode of the first field-effect tube and the first bilateral diode ground connection, the other end of the second resistance respectively with
One end of second bilateral diode and the connection of one end of 3rd resistor, the other end of second resistance also with the second field-effect tube
Grid connects, and the source electrode of the second field-effect tube connects respectively with the other end of the other end of 3rd resistor and the second bilateral diode
It connects, the 3rd resistor is in parallel with the second bilateral diode, the drain electrode of second field-effect tube and the anode of the first diode
Connection, the cathode of first diode are connect with one end of the 4th resistance, and the other end of the 4th resistance is connected to accumulation of energy
One end of capacitance, the other end sending and receiving emitter of the energy storage capacitor, the other end of the 4th resistance also with the 5th resistance one
End connection, the other end of the 5th resistance are connect with the drain electrode of third field-effect tube, the grid and the 6th of the third field-effect tube
Resistance connect, between the source electrode and grid of third field-effect tube be equipped with third bilateral diode, the third bilateral diode with
The source electrode of third field-effect tube is altogether；
Wherein, the switching circuit includes the first capacitance, and the transmitter is connected to the first capacitance, first capacitance with
The grid connection of 4th field-effect tube, the source electrode of the 4th field-effect tube are connect with one end of the 7th resistance, the 4th field-effect
The drain electrode of pipe and the cathode of semiconductor laser connect, and the cathode of the anode of the semiconductor laser and the second diode connects
It connects, the cathode of semiconductor laser is connect with the anode of the second diode.
The charger includes the second capacitance and power supply, and the other end of the 7th resistance and one end of the second capacitance connect
It connects, the other end of the second capacitance and the anode of semiconductor laser connect, and the both ends of second capacitance and the two poles of the earth of power supply connect
It connects, the anode of the power supply is connected to the anode of semiconductor laser, the semiconductor laser, the second capacitance and the 7th electricity
Resistance is altogether.
The positive effect of the utility model is：The integrated circuit can generate that the rise time is small, and pulsewidth is relatively narrow, electricity
Larger driving voltage is pressed, design is simple and practicable；Impulse circuit is equipped with charging and discharging circuit, and charger is controlled as electricity according to voltage
Hold power supply, realize the accurate control of impulse amplitude, pulse after exporting by shutdown signal connection field-effect tube, release circuit
In extra electric energy.
Description of the drawings
Fig. 1 is the overall structure diagram of the utility model；
Fig. 2 is the electrical block diagram of impulse circuit in the utility model；
Fig. 3 is the electrical block diagram of switching circuit, semiconductor laser and charger entirety in the utility model.
Reference numeral
1 sequence circuit
2 impulse circuits
201 first resistors
202 first bilateral diodes
203 first field-effect tube
204 second resistances
205 second bilateral diodes
206 3rd resistors
207 second field-effect tube
208 first diodes
209 the 4th resistance
210 the 5th resistance
211 third field-effect tube
212 the 6th resistance
213 third bilateral diodes
214 energy storage capacitors
215 transmitters
3 switching circuits
301 first capacitances
302 the 4th field-effect tube
303 the 7th resistance
304 second diodes
4 semiconductor lasers
5 chargers
501 second capacitances
502 power supplys.
Specific embodiment
With reference to embodiment and attached drawing, the utility model is described in further detail, but the reality of the utility model
The mode of applying is not limited only to this.
The utility model is intended to provide semiconductor integrated circuit, which is characterized in that as shown in Figure 1, it includes sequence circuit
1st, impulse circuit 2, switching circuit 3, semiconductor laser 4 and charger 5, the output terminal of the sequence circuit 1 are connected to pulse
The input terminal of circuit 2, the output terminal of the impulse circuit 2 are connected to an input terminal of switching circuit 3, the switching circuit 3
Output terminal be connected to the input terminal of charger 5, the output terminal of the charger 5 is connected to the input terminal of semiconductor laser 4,
The output terminal of the semiconductor laser 4 is connect with another input terminal of switching circuit 3.
As shown in Fig. 2, the impulse circuit 2 includes first resistor 201, the beginning of first resistor 201 is as charging end, institute
The end for stating first resistor 201 is connect with one end of the first bilateral diode 202, first resistor 201 also with the first field-effect tube
203 grid connection, the drain electrode of first field-effect tube 203 are connect with one end of second resistance 204, and second resistance 204 is made
For the current-limiting resistance of the first field-effect tube 203 drain electrode, the source electrode of the first field-effect tube 203 is another with the first bilateral diode 202
One end is grounded, the other end of the second resistance 204 respectively with one end of the second bilateral diode 205 and 3rd resistor 206
One end connection, the grid of the other end of second resistance 204 also with the second field-effect tube 207 connect, the second field-effect tube 207
The other end of the source electrode respectively with the other end of 3rd resistor 206 and the second bilateral diode 205 is connect, the 3rd resistor
206 is in parallel with the second bilateral diode 205, the 3rd resistor 206, the second bilateral diode 205 and the second field-effect tube
The junction of 207 source electrodes connects high voltage, and 3rd resistor 206 is as 207 grid of the second field-effect tube and the electrode resistance of source electrode
Second field-effect tube 207 provides bias voltage, and plays the role of bleed off electrostatic, prevents 207 grid of the second field-effect tube and source
Equivalent capacity both ends between pole generate high voltage, protect the grid and source electrode of the second field-effect tube 207, second effect
Should the drain electrode of pipe 207 connect with the anode of the first diode 208.
First field-effect tube 203 and the second field-effect tube 207 are charge control metal-oxide-semiconductor, wherein the first field-effect tube
203 be N-channel MOS pipe, the second field-effect tube 207 be P-channel metal-oxide-semiconductor, the cathode and the 4th resistance of first diode 208
209 one end connection, the first diode 208 play the role of electric current reverse protection, the other end of the 4th resistance 209 and the
One end connection of five resistance 210, the other end of the 4th resistance 209 are additionally coupled to one end of energy storage capacitor 214, the accumulation of energy
The other end ground connection of capacitance 214, the first diode 208 make current-limiting resistance when energy storage capacitor 214 charges, the 5th resistance 210
The other end is connect with the drain electrode of third field-effect tube 211, third field-effect tube 211 be control of discharge pipe, the third field-effect
The grid of pipe 211 is connect with the beginning of the 6th resistance 212.
The end of 6th resistance 212 is equipped with the as discharge end, between the source electrode and grid of third field-effect tube 211
Three bilateral diodes 213, the third bilateral diode 213 and the source electrode of third field-effect tube 211 are grounded jointly, and first is two-way
Diode 202, the second bilateral diode 205, third bilateral diode 21 are Transient Suppression Diode, when having the response being exceedingly fast
Between and quite high surge absoption ability, play the role of each field-effect tube of protection.
The end of the beginning of first resistor 201 and the 6th resistance 212 is the charging control signal raised through overvoltage and puts
Electric control signal is low level under regular situation.The beginning input low level of initial first resistor 201, the first field-effect tube 203
It turns off, at this time 206 no current of 3rd resistor, the second equally shutdown of field-effect tube 207, high voltage can not pass through second effect at this time
Should pipe 207 charge for energy storage capacitor 214；When the beginning input high level of first resistor 201, the first field-effect tube 203 is connected, the
There are electric currents to flow through for three resistance 206, and the second field-effect tube 207 is opened when voltage is suitable, and high voltage passes through the second field-effect tube
207th, the first diode 208 and the 4th resistance 209 charge for energy storage capacitor 214, until be charged to required voltage reduces by first again
The level at the beginning of resistance 201, charging terminate；When the end of 6th resistance 212 is low level, third field-effect tube 211 turns off,
Discharge circuit is fully disconnected, and when the end of the 6th resistance 212 is high level, third field-effect tube 211 is opened, energy storage capacitor
214 are discharged by the 5th resistance 210 and third field-effect tube 211.
The switching circuit 3 includes the first capacitance 301, and the grid of 301 and the 4th field-effect tube 302 of the first capacitance connects
It connects, the source electrode of the 4th field-effect tube 302 is connect with one end of the 7th resistance 303, the drain electrode of the 4th field-effect tube 302 and half
The output terminal connection of conductor laser 4, the both ends of the semiconductor laser 4 are connected by the second diode 304, and the described 7th
The other end of resistance 303 is connect with one end of the second capacitance 501, and the other end of the second capacitance 501 is defeated with semiconductor laser 4
Enter and connected between holding, the both ends of second capacitance 501 power on 502.
As shown in figure 3, when the pulse signal of input is high level, the 4th field-effect tube 302 is connected, the second capacitance 501 from
Source electrode, drain electrode and the semiconductor laser 4 of 4th field-effect tube 302 discharge, and generate Transient Currents, at this time the second diode
304 protection semiconductor lasers 4, prevent the electric voltage reverse-connection of power supply 502 from having an accident；When the pulse signal of input is low electricity
Flat, power supply continues as the second capacitance 501 and charges.
The switching speed of 4th field-effect tube 302 is very fast, and the electric current of transient state is bigger than normal during opening, supply voltage can it is rapid under
Drop, filter circuit is preferably added in the rear end of the 4th field-effect tube 302.
The above content is combine specific preferred embodiment further detailed description of the utility model, it is impossible to
Assert that the utility model specific implementation is confined to these above-mentioned explanations.For the common skill of the utility model technical field
For art personnel, without departing from the concept of the premise utility, several simple deduction or replace can also be made, all should
It is considered as belonging to the scope of protection of the utility model.
Claims (2)
1. semiconductor integrated circuit, which is characterized in that it includes sequence circuit, impulse circuit, switching circuit, semiconductor laser
And charger, the output terminal of the sequence circuit are connected to the input terminal of impulse circuit, the output terminal connection of the impulse circuit
To an input terminal of switching circuit, the output terminal of the switching circuit is connected to the input terminal of charger, the charger
Output terminal is connected to the input terminal of semiconductor laser, another input of the output terminal and switching circuit of the semiconductor laser
End connection；
Wherein, the impulse circuit includes first resistor, and the first resistor is connect with one end of the first bilateral diode, and first
Grid of the resistance also with the first field-effect tube is connect, and the drain electrode of first field-effect tube and one end of second resistance connect, the
The other end of the source electrode of one field-effect tube and the first bilateral diode is grounded, the other end of the second resistance respectively with second pair
It is connected to one end of diode and one end of 3rd resistor, the other end of second resistance also connects with the grid of the second field-effect tube
It connects, the other end of the source electrode of the second field-effect tube respectively with the other end of 3rd resistor and the second bilateral diode is connect, institute
State that 3rd resistor is in parallel with the second bilateral diode, the drain electrode of second field-effect tube is connect with the anode of the first diode,
The cathode of first diode is connect with one end of the 4th resistance, and the other end of the 4th resistance is connected to energy storage capacitor
One end, the other end sending and receiving emitter of the energy storage capacitor, the one end of the other end of the 4th resistance also with the 5th resistance are connect,
The other end of 5th resistance is connect with the drain electrode of third field-effect tube, and the grid of the third field-effect tube and the 6th resistance connect
It connects, third bilateral diode, the third bilateral diode and third field is equipped between the source electrode and grid of third field-effect tube
The source electrode of effect pipe is altogether；
Wherein, the switching circuit includes the first capacitance, and the transmitter is connected to the first capacitance, first capacitance and the 4th
The grid connection of field-effect tube, the source electrode of the 4th field-effect tube are connect with one end of the 7th resistance, the 4th field-effect tube
Drain electrode is connect with the cathode of semiconductor laser, and the anode of the semiconductor laser is connect with the cathode of the second diode, and half
The cathode of conductor laser is connect with the anode of the second diode.
2. semiconductor integrated circuit according to claim 1, which is characterized in that the charger includes the second capacitance and electricity
Source, the other end of the 7th resistance are connect with one end of the second capacitance, the other end of the second capacitance and semiconductor laser
Anode connects, and the both ends of second capacitance and the two poles of the earth of power supply connect, and the anode of the power supply is connected to semiconductor laser
Anode, the semiconductor laser, the second capacitance and the 7th resistance are altogether.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721836076.3U CN207602978U (en) | 2017-12-25 | 2017-12-25 | Semiconductor integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721836076.3U CN207602978U (en) | 2017-12-25 | 2017-12-25 | Semiconductor integrated circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207602978U true CN207602978U (en) | 2018-07-10 |
Family
ID=62766600
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721836076.3U Expired - Fee Related CN207602978U (en) | 2017-12-25 | 2017-12-25 | Semiconductor integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207602978U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108683077A (en) * | 2018-07-26 | 2018-10-19 | 杭州国翌科技有限公司 | Pulse semiconductor laser lighting system |
-
2017
- 2017-12-25 CN CN201721836076.3U patent/CN207602978U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108683077A (en) * | 2018-07-26 | 2018-10-19 | 杭州国翌科技有限公司 | Pulse semiconductor laser lighting system |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20180710 Termination date: 20201225 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |