CN113556108A - Pulse modulator with any pulse width - Google Patents
Pulse modulator with any pulse width Download PDFInfo
- Publication number
- CN113556108A CN113556108A CN202110685410.4A CN202110685410A CN113556108A CN 113556108 A CN113556108 A CN 113556108A CN 202110685410 A CN202110685410 A CN 202110685410A CN 113556108 A CN113556108 A CN 113556108A
- Authority
- CN
- China
- Prior art keywords
- circuit
- driving circuit
- side driving
- low
- pulse
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000001360 synchronised effect Effects 0.000 claims abstract description 18
- 230000008878 coupling Effects 0.000 claims abstract description 6
- 238000010168 coupling process Methods 0.000 claims abstract description 6
- 238000005859 coupling reaction Methods 0.000 claims abstract description 6
- 238000004804 winding Methods 0.000 claims abstract description 5
- 238000007667 floating Methods 0.000 claims abstract description 4
- 230000000630 rising effect Effects 0.000 claims description 5
- 239000003990 capacitor Substances 0.000 claims description 3
- 238000004146 energy storage Methods 0.000 claims description 3
- 239000008186 active pharmaceutical agent Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000005669 field effect Effects 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 238000006467 substitution reaction Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K7/00—Modulating pulses with a continuously-variable modulating signal
- H03K7/08—Duration or width modulation ; Duty cycle modulation
Abstract
The invention provides a pulse modulator with any pulse width, which comprises a synchronous signal time sequence generating circuit, a high-side driving circuit, a low-side driving circuit, a power supply, a power pulse generating circuit, an MOSFET high-side switch and an MOSFET low-side switch, wherein the synchronous signal time sequence generating circuit is connected with the high-side driving circuit; the power supply adopts a BUCK circuit mode; the main circuit of the BUCK circuit supplies power to the low-side drive circuit, and the coupling secondary of the BUCK circuit supplies power to the high-side drive circuit; the high-side driving circuit adopts a 'floating ground' continuous power supply mode for power supply, the pulse width is randomly changed from ns-level pulse width to continuous power supply; the low-side driving circuit and the high-side driving circuit are isolated by the inductance and the auxiliary winding of the BUCK circuit, and a power-on time sequence that the low-side driving circuit is powered on first and the high-side driving circuit is powered on later is formed. The pulse modulator realizes random pulse width modulation under the condition of no voltage drop, and has high output voltage, large output current and high efficiency.
Description
Technical Field
The invention relates to the technical field of electronic reconnaissance T/R, in particular to a pulse modulator with any pulse width.
Background
In the electronic systems such as radar, electronic countermeasure, communication and the like formed by T/R components, in order to ensure the radio frequency isolation degree of a transmitter and a receiver, a power source pulse modulator of the transmitter is required to be used so as to ensure that the transmitter is completely turned off (powered off) when the system is in a receiving working mode, thereby improving the receiving sensitivity of the receiver.
Taking a radar system as an example, the existing radar system has working modes of a long-distance target and a short-distance target, and has narrow pulses (short-distance targets) such as a fire control radar for identifying enemies and a wide pulse (long-distance target) reconnaissance radar and continuous wave radars such as a Doppler radar and the like. It is desirable that the T/R module power supply be capable of being modulated to any pulse width and be capable of operating in a continuous power mode (pulse width is infinitely long). And a sufficiently large output current is required due to the increase of the radar power.
Currently, the following 3 circuit structures are generally adopted to implement power supply pulse modulation:
1. the pulse output circuit adopts a P-type MOSFET on the high side and an N-type MOSFET on the low side, and the P-type MOSFET is responsible for conduction and N-type discharge. However, the P-type MOSFET has a drawback of large on-resistance. The scheme has the defects of large on-resistance, large voltage drop, low efficiency, high temperature rise and the like, but can realize power supply modulation of any pulse width. This solution has serious technical drawbacks and has been rarely used.
2. The pulse output circuit adopts an N-type MOSFET framework on both the high side and the low side, and the on-resistance of the N-type MOSFET is far lower than that of the P-type MOSFET, so that the defect of an P, N-type structure is avoided, but the high side drive needs to be suspended, and a bootstrap circuit provides a high side drive power supply. There are situations where wide pulse modulation cannot be achieved, and even more so, where continuous wave modes of operation cannot be achieved.
3. Based on the scheme 2, the high side adopts a charge pump mode to supply power, but because the voltage of the charge pump is the voltage doubling characteristic and the output current is very small, high-voltage pulse modulation and large-current pulse modulation cannot be realized.
The above 3 modulation modes all have certain defects and cannot meet the system requirements.
Disclosure of Invention
In view of this, the present invention aims to provide a power supply pulse modulator with a pulse width capable of being set arbitrarily, which is used for a radar pulse feed system to complete pulse modulation of a direct current power supply of a transmitter power amplifier of a radar T/R assembly such as a phased array. The high-side drive feed adopts a micro isolation power supply to replace a bootstrap feed mode, and realizes the pulse modulation of any pulse width large-current power supply from nanosecond narrow pulse to continuous wave.
The invention provides a pulse modulator with any pulse width, comprising: the synchronous signal timing sequence generating circuit comprises a synchronous signal timing sequence generating circuit, a high-side driving circuit, a low-side driving circuit, a power supply, a power pulse generating circuit, a MOSFET high-side switch and a MOSFET low-side switch;
the synchronous signal time sequence generating circuit is respectively connected with the high-side driving circuit and the low-side driving circuit in series; the high-side driving circuit is connected with the low-side driving circuit in parallel; the high-side driving circuit is connected with the MOSFET high-side switch in series, and the low-side driving circuit is connected with the MOSFET low-side switch in series;
the power supply adopts a mode of a BUCK circuit;
the main circuit of the BUCK circuit supplies power to the low-side driving circuit, and the coupling secondary of the BUCK circuit supplies power to the high-side driving circuit;
the high-side driving circuit is powered by a floating ground continuous power supply mode instead of a bootstrap circuit, and the pulse width is randomly changed from ns-level pulse width to continuous power supply.
The low-side driving circuit and the high-side driving circuit are isolated by the inductance and the auxiliary winding of the BUCK circuit, and a power-on time sequence that the low-side driving circuit is powered on first and the high-side driving circuit is powered on later is formed, so that the reliability is improved.
Further, the output current of the power pulse generation circuit reaches 100A.
Further, the rising edge and falling edge speeds of the output current reach 20 ns.
Further, the synchronous signal time sequence generating circuit forms a control signal of the high-side driving circuit and a control signal of the low-side driving circuit, and controls the MOSFET high-side switch and the MOSFET low-side switch to be switched on and off in a time-sharing mode so as to output a large-current pulse voltage string;
specifically, the gate drive circuits of the MOSFET high side switch and the MOSFET low side switch form drive signals of large drive currents.
Furthermore, a control signal of the high-side driving circuit and a control signal of the low-side driving circuit formed by the synchronous signal time sequence generating circuit have phase difference, so that simultaneous conduction of the MOSFET high-side switch and the MOSFET low-side switch caused by switching speed of a field effect tube is avoided;
specifically, the synchronous signal timing generation circuit forms a time difference between a control signal of the high-side driving circuit and a control signal of the low-side driving circuit through the RC delay circuit so as to avoid simultaneous conduction of the MOSFET high-side switch and the MOSFET low-side switch caused by the switching speed of the field effect transistor.
Furthermore, the BUCK circuit controls the on-off of the voltage applied to the inductor by the input voltage through the PWM signal to convert the high voltage into the low-voltage auxiliary power supply, and the output voltage stabilization is realized through the PWM duty ratio formed by the feedback circuit, so that the stable operation of the system is ensured.
Further, the synchronizing signal timing generation circuit includes a TTL pulse generator.
Further, the pulse modulator also comprises an energy storage capacitor.
Compared with the prior art, the invention has the beneficial effects that:
the pulse modulator realizes any pulse width modulation under the condition of no voltage drop, and has high output voltage, large output current and high efficiency; and has great significance for standardization, miniaturization and simplification of system debugging.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention.
In the drawings:
FIG. 1 is a schematic circuit diagram of a pulse modulator of any pulse width according to an embodiment of the present invention;
FIG. 2 is a schematic circuit diagram of a high side driver circuit and a low side driver circuit according to an embodiment of the present invention;
FIG. 3 is a schematic circuit diagram of a synchronizing signal timing generation circuit according to an embodiment of the present invention;
FIG. 4 is a schematic circuit diagram of the BUCK circuit according to the embodiment of the present invention.
Detailed Description
Reference will now be made in detail to the exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, like numbers in different drawings represent the same or similar elements unless otherwise indicated. The implementations described in the exemplary embodiments below are not intended to represent all implementations consistent with the present disclosure. Rather, they are merely examples of apparatus and methods consistent with certain aspects of the present disclosure, as detailed in the appended claims.
The terminology used in the present disclosure is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. As used in this disclosure and the appended claims, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It should also be understood that the term "and/or" as used herein refers to and encompasses any and all possible combinations of one or more of the associated listed items.
It should be understood that although the terms first, second, and third may be used in this disclosure to describe various information, this information should not be limited to these terms. These terms are only used to distinguish one type of information from another. For example, first information may also be referred to as second information, and similarly, second information may also be referred to as first information, without departing from the scope of the present disclosure. The word "if" as used herein may be interpreted as "at … …" or "when … …" or "in response to a determination", depending on the context.
An embodiment of the present invention provides a pulse modulator with any pulse width, as shown in fig. 1, including: the synchronous signal timing sequence generating circuit comprises a synchronous signal timing sequence generating circuit, a high-side driving circuit, a low-side driving circuit, a power supply, a power pulse generating circuit, a MOSFET high-side switch and a MOSFET low-side switch;
the synchronous signal time sequence generating circuit is respectively connected with the high-side driving circuit and the low-side driving circuit in series; the high-side driving circuit is connected with the low-side driving circuit in parallel; the high-side driving circuit is connected with the MOSFET high-side switch in series, and the low-side driving circuit is connected with the MOSFET low-side switch in series;
the power supply adopts a mode of a BUCK circuit;
the main circuit of the BUCK circuit supplies power to the low-side driving circuit, and the coupling secondary of the BUCK circuit supplies power to the high-side driving circuit;
the high-side driving circuit is powered by a floating ground continuous power supply mode instead of a bootstrap circuit, and the pulse width is randomly changed from ns-level pulse width to continuous power supply;
in this embodiment, the high-side driving circuit adopts a micro isolation power supply to replace a bootstrap feeding mode, so that any pulse width large-current power supply pulse modulation from ns-level narrow pulses to continuous waves is realized.
The low-side driving circuit and the high-side driving circuit are isolated by the inductance and the auxiliary winding of the BUCK circuit, and a power-on time sequence that the low-side driving circuit is powered on first and the high-side driving circuit is powered on later is formed so as to improve the reliability;
in order to meet the requirement of miniaturization, a power supply of a high-side drive circuit cannot adopt a traditional isolation power supply mode such as single-ended flyback. Therefore, the embodiment adopts a BUCK circuit mode, a coupling secondary winding is added on an inductance magnetic core in the BUCK circuit, an isolated secondary output is formed through diode rectification, and the LDO is used as a secondary voltage stabilizer. The BUCK main circuit is used as a power supply of the low-side driving circuit, the coupling secondary circuit is used as a power supply of the high-side driving circuit, and the topological structure simultaneously realizes a power-on time sequence when the circuit is powered on, namely the low-side driving circuit is powered on (discharged) firstly, and the high-side driving circuit is powered on (output) later, so that the reliability of the circuit is ensured.
The output current of the power pulse generation circuit reaches 100A; the speed of the rising edge and the falling edge of the output current reaches 20 ns;
because of using the high-side N-type MOSFET, the output current can reach 100A, the speed of the rising edge and the falling edge can reach 20ns, the device is completely suitable for short-distance and long-distance target detection, and the mode conversion of the continuous wave radar can be realized by the same device;
in this embodiment, the gate of the MOSFET is driven with a larger current to increase the on and off speed of the MOSFET.
ComputingRequired drive current I of MOSFETg:
The model of the switch tube is as follows: PSMN8R7-100YSF
The main parameters are as follows: rDS(25℃)=7.2mΩ;RDS(100℃)=10.7mΩ;Ciss(max)=2758pF(VDS=50V) Coss(TYP)=532pF(VDS=50V)Crss(max)=17pF(VDS=50V)Rg=0.8Ω;
To eliminate Miller oscillation, a gate current limiting resistor R 'is externally connected'g3.3 omega total grid current limiting resistor Rg4.1 Ω, gate drive current
the drivers of the high-side driving circuit and the low-side driving circuit adopt UCC27200 and drive current 3A, so that the driving requirements can be met;
the high-side driving circuit and the low-side driving circuit of the present embodiment are shown in fig. 2.
The synchronous signal time sequence generating circuit forms a control signal of the high-side driving circuit and a control signal of the low-side driving circuit, and controls the MOSFET high-side switch and the MOSFET low-side switch to be switched on and switched off in a time-sharing manner so as to output a large-current pulse voltage string;
specifically, the gate drive circuits of the MOSFET high side switch and the MOSFET low side switch form drive signals of large drive currents.
The control signal of the high-side driving circuit and the control signal of the low-side driving circuit formed by the synchronous signal time sequence generating circuit have phase difference, so that the MOSFET high-side switch and the MOSFET low-side switch are prevented from being simultaneously conducted due to the switching speed of a field effect tube;
specifically, the synchronous signal timing sequence generating circuit forms a time difference between a control signal of the high-side driving circuit and a control signal of the low-side driving circuit through an RC delay circuit so as to avoid simultaneous conduction of the MOSFET high-side switch and the MOSFET low-side switch caused by the switching speed of the field effect transistor;
the synchronizing signal timing generating circuit of the present embodiment is shown in fig. 3.
The BUCK circuit controls the on-off of the voltage applied to the inductor by the input voltage through the PWM signal to convert the high voltage into the low-voltage auxiliary power supply, and outputs the regulated voltage through the PWM duty ratio formed by the feedback circuit to ensure the stable operation of the system;
the BUCK circuit of the present embodiment is shown in FIG. 4.
The synchronizing signal timing generation circuit comprises a TTL pulse generator.
The pulse modulator also includes an energy storage capacitor.
Compared with the prior art, the invention has the beneficial effects that:
the pulse modulator realizes any pulse width modulation under the condition of no voltage drop, and has high output voltage, large output current and high efficiency; and has great significance for standardization, miniaturization and simplification of system debugging.
So far, the technical solutions of the present invention have been described in connection with the preferred embodiments shown in the drawings, but it is easily understood by those skilled in the art that the scope of the present invention is obviously not limited to these specific embodiments. Without departing from the principle of the invention, a person skilled in the art can make the same changes or substitutions on the related technical features, and the technical solutions after the changes or substitutions will fall within the protection scope of the invention.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention; various modifications and alterations to this invention will become apparent to those skilled in the art. Any modification, substitution and improvement made within the spirit and principle of the present invention shall fall within the protection scope of the present invention.
Claims (7)
1. A pulse modulator of arbitrary pulse width, comprising: the synchronous signal timing sequence generating circuit comprises a synchronous signal timing sequence generating circuit, a high-side driving circuit, a low-side driving circuit, a power supply, a power pulse generating circuit, a MOSFET high-side switch and a MOSFET low-side switch;
the synchronous signal time sequence generating circuit is respectively connected with the high-side driving circuit and the low-side driving circuit in series; the high-side driving circuit is connected with the low-side driving circuit in parallel; the high-side driving circuit is connected with the MOSFET high-side switch in series, and the low-side driving circuit is connected with the MOSFET low-side switch in series;
the power supply adopts a mode of a BUCK circuit; the main circuit of the BUCK circuit supplies power to the low-side driving circuit, and the coupling secondary of the BUCK circuit supplies power to the high-side driving circuit;
the high-side driving circuit is powered by a 'floating ground' continuous power supply mode, the pulse width is randomly changed from ns-level pulse width to continuous power supply;
the low-side driving circuit and the high-side driving circuit are isolated by the inductance and the secondary winding of the BUCK circuit, and a power-on time sequence that the low-side driving circuit is powered on first and the high-side driving circuit is powered on later is formed.
2. The pulse modulator according to claim 1, wherein the synchronizing signal timing generating circuit forms a control signal of the high side driving circuit and a control signal of the low side driving circuit, and controls the MOSFET high side switch and the MOSFET low side switch to be turned on and off in a time-sharing manner to output the large-current pulse voltage train.
3. The pulse modulator according to claim 2, wherein the synchronous signal timing generation circuit forms a control signal of the high side driving circuit and a control signal of the low side driving circuit with a phase difference to avoid simultaneous conduction of the MOSFET high side switch and the MOSFET low side switch due to the switching speed of the fet.
4. The pulse modulator according to claim 1, wherein the BUCK circuit switches on and off the voltage applied to the inductor by the input voltage through the PWM signal to convert the high voltage into the low voltage auxiliary power supply, and the output voltage is stabilized through a PWM duty ratio formed by the feedback circuit.
5. The pulse modulator of claim 1, wherein the synchronization signal timing generation circuit comprises a TTL pulse generator.
6. A pulse modulator according to claim 1, characterized in that the output current of the power pulse generating circuit reaches 100A, the rising and falling edge speed of the output current reaches 20 ns.
7. The pulse modulator of claim 1, further comprising an energy storage capacitor.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110685410.4A CN113556108A (en) | 2021-06-21 | 2021-06-21 | Pulse modulator with any pulse width |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110685410.4A CN113556108A (en) | 2021-06-21 | 2021-06-21 | Pulse modulator with any pulse width |
Publications (1)
Publication Number | Publication Date |
---|---|
CN113556108A true CN113556108A (en) | 2021-10-26 |
Family
ID=78130752
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202110685410.4A Pending CN113556108A (en) | 2021-06-21 | 2021-06-21 | Pulse modulator with any pulse width |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN113556108A (en) |
Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5952733A (en) * | 1997-12-05 | 1999-09-14 | Intel Corporation | Power distribution system for electronic devices |
US6232833B1 (en) * | 1998-11-18 | 2001-05-15 | Intersil Corporation | Low noise low distortion class D amplifier |
JP2001267856A (en) * | 2000-01-21 | 2001-09-28 | Harris Corp | Rf power amplifier and its improvement |
CN1808896A (en) * | 2005-12-29 | 2006-07-26 | 南京航空航天大学 | Tri-level switch power amplifier |
US7598715B1 (en) * | 2007-04-04 | 2009-10-06 | National Semiconductor Corporation | Apparatus and method for reverse current correction for a switching regulator |
US20130076322A1 (en) * | 2011-09-22 | 2013-03-28 | Renesas Electronics Corporation | Power conversion circuit, multiphase voltage regulator, and power conversion method |
CN203399001U (en) * | 2013-06-18 | 2014-01-15 | 吉林大学 | Multifunctional piezoelectric pump drive power supply based on FPGA |
CN104300769A (en) * | 2014-10-23 | 2015-01-21 | 广东威创视讯科技股份有限公司 | Isolated type H-bridge drive device |
CN106208631A (en) * | 2016-08-30 | 2016-12-07 | 苏州泰思特电子科技有限公司 | Arbitrarily pulsewidth MOSFET electrical switch drive circuit |
CN206472021U (en) * | 2016-12-29 | 2017-09-05 | 株式会社村田制作所 | Voltage changer with multiple-channel output |
CN109194110A (en) * | 2018-10-12 | 2019-01-11 | 北京动力机械研究所 | The charging of heavy-duty motor drive control device and electrifying timing sequence circuit |
CN111146770A (en) * | 2019-12-31 | 2020-05-12 | 三维通信股份有限公司 | Protection circuit of GaN power device |
CN111464172A (en) * | 2020-04-21 | 2020-07-28 | 黄山学院 | Low-delay high-side driving circuit suitable for GaN device |
GB202100699D0 (en) * | 2020-02-07 | 2021-03-03 | Cirrus Logic Int Semiconductor Ltd | Dual bootstrapping for an open-loop pulse width modulation driver |
-
2021
- 2021-06-21 CN CN202110685410.4A patent/CN113556108A/en active Pending
Patent Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5952733A (en) * | 1997-12-05 | 1999-09-14 | Intel Corporation | Power distribution system for electronic devices |
US6232833B1 (en) * | 1998-11-18 | 2001-05-15 | Intersil Corporation | Low noise low distortion class D amplifier |
JP2001267856A (en) * | 2000-01-21 | 2001-09-28 | Harris Corp | Rf power amplifier and its improvement |
CN1808896A (en) * | 2005-12-29 | 2006-07-26 | 南京航空航天大学 | Tri-level switch power amplifier |
US7598715B1 (en) * | 2007-04-04 | 2009-10-06 | National Semiconductor Corporation | Apparatus and method for reverse current correction for a switching regulator |
US20130076322A1 (en) * | 2011-09-22 | 2013-03-28 | Renesas Electronics Corporation | Power conversion circuit, multiphase voltage regulator, and power conversion method |
CN203399001U (en) * | 2013-06-18 | 2014-01-15 | 吉林大学 | Multifunctional piezoelectric pump drive power supply based on FPGA |
CN104300769A (en) * | 2014-10-23 | 2015-01-21 | 广东威创视讯科技股份有限公司 | Isolated type H-bridge drive device |
CN106208631A (en) * | 2016-08-30 | 2016-12-07 | 苏州泰思特电子科技有限公司 | Arbitrarily pulsewidth MOSFET electrical switch drive circuit |
CN206472021U (en) * | 2016-12-29 | 2017-09-05 | 株式会社村田制作所 | Voltage changer with multiple-channel output |
CN109194110A (en) * | 2018-10-12 | 2019-01-11 | 北京动力机械研究所 | The charging of heavy-duty motor drive control device and electrifying timing sequence circuit |
CN111146770A (en) * | 2019-12-31 | 2020-05-12 | 三维通信股份有限公司 | Protection circuit of GaN power device |
GB202100699D0 (en) * | 2020-02-07 | 2021-03-03 | Cirrus Logic Int Semiconductor Ltd | Dual bootstrapping for an open-loop pulse width modulation driver |
CN111464172A (en) * | 2020-04-21 | 2020-07-28 | 黄山学院 | Low-delay high-side driving circuit suitable for GaN device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4967332A (en) | HVIC primary side power supply controller including full-bridge/half-bridge driver | |
US4849651A (en) | Two-state, bilateral, single-pole, double-throw, half-bridge power-switching apparatus and power supply means for such electronic power switching apparatus | |
US11929588B2 (en) | Pulsed laser diode driver | |
US20150130657A1 (en) | High speed, high efficiency, high power rf pulse modulating integrated switch | |
US5227961A (en) | Symmetrical delay circuit | |
CN116626652A (en) | Laser emission circuit and laser radar | |
US10044350B1 (en) | Power FET driver | |
CN215378887U (en) | Pulse modulator with any pulse width | |
EP2398135A2 (en) | DC/DC power converter having active self driving synchronous rectification | |
CN113556108A (en) | Pulse modulator with any pulse width | |
KR20200134700A (en) | Modulation and demodulation circuit for power switch | |
US6222744B1 (en) | Isolated power supply circuit for a floating gate driver | |
US5111084A (en) | Low loss drain pulser circuit for solid state microwave power amplifiers | |
US5099202A (en) | Phase shift generator | |
CN219106738U (en) | Narrow pulse laser driving circuit and laser ranging device | |
US20230261658A1 (en) | Level shifter circuit of driving device | |
CN115694459A (en) | Circuit and method for high-speed isolation driving MOSFET with adjustable pulse width | |
CN113241942B (en) | Bootstrap driving circuit applied to four-switch buck-boost converter | |
CN109921631B (en) | Isolated upper bridge bootstrap charge pump circuit for bridge driver and control method | |
CN217545910U (en) | Laser transmitter drive circuit and system thereof | |
US11894656B2 (en) | Configurable high-frequency pulsed laser diode driver | |
KR102657175B1 (en) | DRIVING CIRCUIT FOR GaN FET | |
WO2022133691A1 (en) | Switch circuit and switch power supply | |
US11901697B2 (en) | Single-FET pulsed laser diode driver | |
US20080231344A1 (en) | Power-diode driver having expansible isolated sub-drivers using single power source |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination |