CN106208631A - Arbitrarily pulsewidth MOSFET electrical switch drive circuit - Google Patents
Arbitrarily pulsewidth MOSFET electrical switch drive circuit Download PDFInfo
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- CN106208631A CN106208631A CN201610763775.3A CN201610763775A CN106208631A CN 106208631 A CN106208631 A CN 106208631A CN 201610763775 A CN201610763775 A CN 201610763775A CN 106208631 A CN106208631 A CN 106208631A
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- edge detection
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/689—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit
- H03K17/691—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit using transformer coupling
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K5/13—Arrangements having a single output and transforming input signals into pulses delivered at desired time intervals
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0036—Means reducing energy consumption
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0081—Power supply means, e.g. to the switch driver
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Electronic Switches (AREA)
- Amplifiers (AREA)
Abstract
The open a kind of arbitrarily pulsewidth MOSFET electrical switch drive circuit of the present invention, including: square-wave generator, low level edge detection unit, high level edge detection unit, positive pulse level conversion unit, negative pulse level conversion unit, positive pulse drive branch road, negative pulse to drive branch road；It is connected to low level edge detection unit and the respective input of high level edge detection unit for producing the square-wave generator triggering square-wave signal；Described positive pulse drives branch road, negative pulse to drive branch road to be taken can form by unit by driving small-signal unit, power tube unit and the main circuit being sequentially connected in series, and described coupling transformer primary side and primary side are respectively provided with a primary coil and at least 2 secondary coils.The present invention can realize any width of driving pulse, it is not necessary to a large amount of insulating power supplies, and drive circuit volume is the least, drives power minimum.
Description
Technical field
The invention belongs to power electronic devices applied technical field, particularly relate to a kind of arbitrarily pulsewidth MOSFET electrical switch
Drive circuit.
Background technology
Miniaturization any pulsewidth MOSFET electrical switch many employings active transformer coupled modes.This driving circuit principle
Although Pulse of Arbitrary width can be realized, but, it is not suitable for array MOSFET electrical switch.Trace it to its cause and be, this driving
Insulating power supply substantial amounts needed for circuit, is difficulty with Miniaturization Design.Above-mentioned technical problem how is overcome to become this area skill
The direction that art personnel make great efforts.
Summary of the invention
It is an object of the present invention to provide a kind of arbitrarily pulsewidth MOSFET electrical switch drive circuit, this any pulsewidth MOSFET electricity
Sub-switch driving circuit can realize any width of driving pulse, it is not necessary to a large amount of insulating power supplies, and drive circuit volume is the least, drives
Power is minimum.
For reaching above-mentioned purpose, the technical solution used in the present invention is: a kind of arbitrarily pulsewidth MOSFET electrical switch drives
Circuit, including: square-wave generator, low level edge detection unit, high level edge detection unit, positive pulse level conversion list
Unit, negative pulse level conversion unit, positive pulse drive branch road, negative pulse to drive branch road；For producing the side triggering square-wave signal
Wave producer is connected to low level edge detection unit and the respective input of high level edge detection unit, described low level limit
Edge detector unit drives branch road to be sequentially connected with negative pulse level conversion unit and negative pulse, described high level edge detection unit
Branch road is driven to be sequentially connected with positive pulse level conversion unit and positive pulse；
Described high level edge detection unit farther include to be sequentially connected in series first with door, high level derivative module, first non-
Door and the second not gate, this first is connected with square-wave generator with an input of door, sets between another input and ground connection
Being equipped with the first electric capacity, described second not gate is connected with positive pulse level conversion unit；
Described low level edge detection unit farther include to be sequentially connected in series second with door, low level derivative module, the 3rd non-
Door and the 4th not gate, this second and of door be provided with the 5th not gate between input and square-wave generator, another input
Being provided with the second electric capacity between end and ground connection, described 4th not gate is connected with negative pulse level conversion unit；
Described positive pulse drives branch road, negative pulse to drive branch road by the driving small-signal unit being sequentially connected in series, power tube unit
Taking can form by unit with main circuit, described coupling transformer primary side and primary side are respectively provided with a primary coil and at least 2
Individual secondary coil, these at least 2 secondary coils are further divided at least 1 VTpSecondary coil and at least 1 VTnSecondary coil；
Described acceleration NE is connected in series in the primary coil of coupling transformer, the V of coupling transformerTpSecondary coil and
VTnSecondary coil is all connected on the corresponding driving small-signal unit driving branch road；
Described driving small-signal unit farther include filtration module, metal-oxide-semiconductor and between filtration module, metal-oxide-semiconductor first
Diode, this filtration module is connected with VTn secondary coil, and the grid of this metal-oxide-semiconductor and source electrode are electric with the height of VTp secondary coil respectively
Position outfan and electronegative potential outfan connect；
Described main circuit take can unit farther include store electric capacity, the second diode and 2 series connection current-limiting resistances, described in deposit
Storage electric capacity is connected with the drain electrode of the metal-oxide-semiconductor driving small-signal unit, and described second diode is positioned at the current-limiting resistance of 2 series connection
Between the contact of contact and metal-oxide-semiconductor and storage electric capacity, the source electrode of the metal-oxide-semiconductor of small-signal unit is driven to be connected in power tube unit
The grid of power tube, the drain electrode of described power tube unit and source electrode are respectively as the positive pole of main circuit and negative pole.
In technique scheme, further improvement project is as follows:
1., in such scheme, the power tube in described power tube unit is by the first power MOS pipe and the second power MOS tube parallel
Composition.
2. in such scheme, described positive pulse level conversion unit, negative pulse level conversion unit by push-pull circuit,
High-voltage MOS pipe, acceleration NE, coupling transformer composition.
3., in such scheme, described push-pull circuit includes the first power MOS pipe, the second power MOS pipe and the 3rd power
Metal-oxide-semiconductor, the second power MOS pipe and the 3rd power MOS tube parallel, the first power MOS pipe and the second power MOS pipe and the 3rd power
Metal-oxide-semiconductor is connected.
Owing to technique scheme is used, the present invention compared with prior art has the advantage that
The present invention any pulsewidth MOSFET electrical switch drive circuit, it can realize any width of driving pulse, it is not necessary to a large amount of
Insulating power supply, drive circuit volume is the least, drives power minimum；Power supply significantly reduces, and power is the least,
The core of this design of drive circuit: first, detection triggers the lead and trail edge of signal, provides foundation for pulse width control；
Secondly, utilize main circuit for drive circuit capacitor energy storage, such that it is able to save insulating power supply；And use from coupling transformer
Taking with main circuit can dipulse injecting power before and after unit, it is not necessary to extra power supply, had both greatly reduced electrical switch and has driven
Circuit volume, accelerates again electrical switch rising front, and electrical switch drive circuit power demand significantly reduces, and is especially suitable for battle array
Row MOSFET electrical switch.
Accompanying drawing explanation
Accompanying drawing 1 is the present invention any pulsewidth MOSFET electrical switch drive circuit partial structurtes schematic diagram；
Accompanying drawing 2 is each point voltage oscillogram of the present invention；
Accompanying drawing 3 is positive pulse level shifting circuit structural representation of the present invention；
Accompanying drawing 4 is negative pulse level shifting circuit structural representation of the present invention；
Accompanying drawing 5 is power energy system of the present invention and power unit structure schematic diagram.
In the figures above: 1, square-wave generator；2, low level edge detection unit；3, high level edge detection unit；4、
Positive pulse level conversion unit；5, negative pulse level conversion unit；6, positive pulse drives branch road；7, negative pulse drives branch road；81、
First and door；82, high level derivative module；83, the first not gate；84, the second not gate；85, the first electric capacity；91, second and door；
92, low level derivative module；93, the 3rd not gate；94, the 4th not gate；95, the 5th not gate；96, the second electric capacity；10, electricity is recommended
Road；101, the first power MOS pipe；102, push-pull circuit；103, push-pull circuit；11, high-voltage MOS pipe；12, NE is accelerated；
13, coupling transformer；14, small-signal unit is driven；141, filtration module；142, metal-oxide-semiconductor；143, the first diode；15, power
Pipe unit；151, power tube；16, main circuit takes energy unit；161, storage electric capacity；162, the second diode；163, current-limiting resistance.
Detailed description of the invention
Below in conjunction with the accompanying drawings and embodiment the invention will be further described:
Embodiment 1: a kind of arbitrarily pulsewidth MOSFET electrical switch drive circuit, including: square-wave generator 1, low level edge are examined
Survey unit 2, high level edge detection unit 3, positive pulse level conversion unit 4, negative pulse level conversion unit 5, positive pulse are driven
Dynamic branch road 6, negative pulse drive branch road 7；It is connected to low level rim detection for producing the square-wave generator 1 triggering square-wave signal
Unit 2 and the respective input of high level edge detection unit 3, described low level edge detection unit 2 turns with negative pulse level
Change unit 5 and negative pulse drives branch road 7 to be sequentially connected with, described high level edge detection unit 3 and positive pulse level conversion unit 4
Branch road 6 is driven to be sequentially connected with positive pulse；
Described high level edge detection unit 3 farther include to be sequentially connected in series first with door 81, high level derivative module 82, the
One not gate 83 and the second not gate 84, this first is connected with square-wave generator 1 with an input of door 81, another input with
Being provided with the first electric capacity 85 between ground connection, described second not gate 84 is connected with positive pulse level conversion unit 4；
Described low level edge detection unit 2 farther include to be sequentially connected in series second with door 91, low level derivative module 92, the
Three not gate 93 and the 4th not gates 94, are provided with the 5th not gate between this second and an input and square-wave generator 1 of door 91
95, it is provided with the second electric capacity 96, described 4th not gate 94 and negative pulse level conversion unit 5 between another input and ground connection
Connect；
Described positive pulse drives branch road 6, negative pulse to drive branch road 7 by the driving small-signal unit 14 being sequentially connected in series, power tube
Unit 15 and main circuit take and can form by unit 16, and described coupling transformer 4 primary side and primary side are respectively provided with a primary line
Circle and at least 2 secondary coils, these at least 2 secondary coils are further divided at least 1 VTpSecondary coil and at least 1 VTn
Secondary coil；
Described acceleration NE 12 is connected in series in the primary coil of coupling transformer 13, the V of coupling transformer 13TpSecondary
Coil and VTnSecondary coil is all connected on the corresponding driving small-signal unit 14 driving branch road；
Described driving small-signal unit 14 farther includes filtration module 141, metal-oxide-semiconductor 142 and is positioned at filtration module 141, metal-oxide-semiconductor
The first diode 143 between 142, this filtration module 141 is connected with VTn secondary coil, the grid of this metal-oxide-semiconductor 142 and source electrode
It is connected with high-potential output end and the electronegative potential outfan of VTp secondary coil respectively；
Described main circuit takes and can farther include to store electric capacity the 161, second diode 162 and 2 current limliting electricity connected by unit 16
Resistance 163, described storage electric capacity 91 is connected with the drain electrode of the metal-oxide-semiconductor 72 driving small-signal unit 7, and described second diode 92 is positioned at
Between the contact of the contact of the current-limiting resistance 93 of 2 series connection and metal-oxide-semiconductor 72 and storage electric capacity, drive the metal-oxide-semiconductor of small-signal unit 5
Source electrode be connected to the grid of power tube 81 in power tube unit 8, the drain electrode of described power tube unit 8 and source electrode are respectively as master
The positive pole of circuit and negative pole.
Above-mentioned positive pulse level conversion unit 4, negative pulse level conversion unit 5 are by push-pull circuit 10, high-voltage MOS pipe
11, accelerate NE 12, coupling transformer 13 forms.
Above-mentioned push-pull circuit 10 includes the first power MOS pipe the 101, second power MOS pipe 102 and the 3rd power MOS pipe
103, the second power MOS pipe 102 is in parallel with the 3rd power MOS pipe 103, the first power MOS pipe 101 and the second power MOS pipe 102
Connect with the 3rd power MOS pipe 103.
Turn-on and turn-off represents power tube respectively and turns on and off signal.The high level lasting time of the two divides
Do not reflect high level time and the low level time of former driving signal TR.Turn-on and turn-off pulse is respectively used to touch
Send out Tp11、Tp12、Tp21、Tp22And Tn11、Tn12, as shown in figs. 1 and 3.
Active transformer can also realize Pulse of Arbitrary width, but, this scheme is not suitable for MOSFET array switch.
Reason is that this circuit needs substantial amounts of isolation power supply, limits the miniaturization of electrical switch.
The present embodiment has unique advantage in array electronic switchs the application scenario of (power device series connection number is a lot).It is not
Can be only that electrical switch grid provides any pulsewidth to drive power, but also without insulating power supply.Driving of this electrical switch
Energy derives from main circuit and the capacitor of capacitor Ck1 and Ck2 is stored energy.
Embodiment 2: a kind of arbitrarily pulsewidth MOSFET electrical switch drive circuit, including: square-wave generator 1, low level limit
Edge detector unit 2, high level edge detection unit 3, positive pulse level conversion unit 4, negative pulse level conversion unit 5, Zheng Mai
Punching drives branch road 6, negative pulse to drive branch road 7；It is connected to low level edge for producing the square-wave generator 1 triggering square-wave signal
Detector unit 2 and the respective input of high level edge detection unit 3, described low level edge detection unit 2 and negative pulse electricity
Flat converting unit 5 and negative pulse drive branch road 7 to be sequentially connected with, described high level edge detection unit 3 and positive pulse level conversion
Unit 4 and positive pulse drive branch road 6 to be sequentially connected with；
Described high level edge detection unit 3 farther include to be sequentially connected in series first with door 81, high level derivative module 82, the
One not gate 83 and the second not gate 84, this first is connected with square-wave generator 1 with an input of door 81, another input with
Being provided with the first electric capacity 85 between ground connection, described second not gate 84 is connected with positive pulse level conversion unit 4；
Described low level edge detection unit 2 farther include to be sequentially connected in series second with door 91, low level derivative module 92, the
Three not gate 93 and the 4th not gates 94, are provided with the 5th not gate between this second and an input and square-wave generator 1 of door 91
95, it is provided with the second electric capacity 96, described 4th not gate 94 and negative pulse level conversion unit 5 between another input and ground connection
Connect；
Described positive pulse drives branch road 6, negative pulse to drive branch road 7 by the driving small-signal unit 14 being sequentially connected in series, power tube
Unit 15 and main circuit take and can form by unit 16, and described coupling transformer 4 primary side and primary side are respectively provided with a primary line
Circle and at least 2 secondary coils, these at least 2 secondary coils are further divided at least 1 VTpSecondary coil and at least 1 VTn
Secondary coil；
Described acceleration NE 12 is connected in series in the primary coil of coupling transformer 13, the V of coupling transformer 13TpSecondary
Coil and VTnSecondary coil is all connected on the corresponding driving small-signal unit 14 driving branch road；
Described driving small-signal unit 14 farther includes filtration module 141, metal-oxide-semiconductor 142 and is positioned at filtration module 141, metal-oxide-semiconductor
The first diode 143 between 142, this filtration module 141 is connected with VTn secondary coil, the grid of this metal-oxide-semiconductor 142 and source electrode
It is connected with high-potential output end and the electronegative potential outfan of VTp secondary coil respectively；
Described main circuit takes and can farther include to store electric capacity the 161, second diode 162 and 2 current limliting electricity connected by unit 16
Resistance 163, described storage electric capacity 91 is connected with the drain electrode of the metal-oxide-semiconductor 72 driving small-signal unit 7, and described second diode 92 is positioned at
Between the contact of the contact of the current-limiting resistance 93 of 2 series connection and metal-oxide-semiconductor 72 and storage electric capacity, drive the metal-oxide-semiconductor of small-signal unit 5
Source electrode be connected to the grid of power tube 81 in power tube unit 8, the drain electrode of described power tube unit 8 and source electrode are respectively as master
The positive pole of circuit and negative pole.
Power tube 151 in above-mentioned power tube unit 15 is made up of the first power MOS pipe and the second power MOS tube parallel.
Above-mentioned positive pulse level conversion unit 4, negative pulse level conversion unit 5 are by push-pull circuit 10, high-voltage MOS pipe
11, accelerate NE 12, coupling transformer 13 forms.
Turn-on and turn-off represents power tube respectively and turns on and off signal.The high level lasting time of the two divides
Do not reflect high level time and the low level time of former driving signal TR.Turn-on and turn-off pulse is respectively used to touch
Send out Tp11、Tp12、Tp21、Tp22And Tn11、Tn12, as shown in figs. 1 and 3.
Active transformer can also realize Pulse of Arbitrary width, but, this scheme is not suitable for MOSFET array switch.
Reason is that this circuit needs substantial amounts of isolation power supply, limits the miniaturization of electrical switch.
The present embodiment has unique advantage in array electronic switchs the application scenario of (power device series connection number is a lot).It is not
Can be only that electrical switch grid provides any pulsewidth to drive power, but also without insulating power supply.Driving of this electrical switch
Energy derives from main circuit and the capacitor of capacitor Ck1 and Ck2 is stored energy.
When using above-mentioned any pulsewidth MOSFET electrical switch drive circuit, its power supply significantly reduces, and power supply
Power is the least.The core of this design of drive circuit: first, detection triggers the lead and trail edge of signal, for pulse width control
Foundation is provided；Secondly, utilize main circuit for drive circuit capacitor energy storage, such that it is able to save insulating power supply；And use from
Coupling transformer and main circuit take dipulse injecting power before and after energy unit, it is not necessary to extra power supply, have both greatly reduced electricity
Sub-switch driving circuit volume, accelerates again electrical switch rising front, and electrical switch drive circuit power demand significantly reduces,
It is especially suitable for array MOSFET electrical switch.
Above-described embodiment, only for technology design and the feature of the explanation present invention, its object is to allow person skilled in the art
Scholar will appreciate that present disclosure and implements according to this, can not limit the scope of the invention with this.All according to the present invention
The equivalence that spirit is made changes or modifies, and all should contain within protection scope of the present invention.
Claims (4)
1. any pulsewidth MOSFET electrical switch drive circuit, it is characterised in that: including: square-wave generator (1), low level
Edge detection unit (2), high level edge detection unit (3), positive pulse level conversion unit (4), negative pulse level conversion list
Unit (5), positive pulse drive branch road (6), negative pulse to drive branch road (7)；For producing the square-wave generator (1) triggering square-wave signal
It is connected to low level edge detection unit (2) and high level edge detection unit (3) respective input, described low level edge
Detector unit (2) drives branch road (7) to be sequentially connected with negative pulse level conversion unit (5) and negative pulse, described high level edge
Detector unit (3) drives branch road (6) to be sequentially connected with positive pulse level conversion unit (4) and positive pulse；
Described high level edge detection unit (3) farther includes first and door (81), the high level derivative module being sequentially connected in series
(82), the first not gate (83) and the second not gate (84), this is first with an input of door (81) with square-wave generator (1) even
Connect, between another input and ground connection, be provided with the first electric capacity (85), described second not gate (84) and positive pulse level conversion
Unit (4) connects；
Described low level edge detection unit (2) farther includes second and door (91), the low level derivative module being sequentially connected in series
(92), the 3rd not gate (93) and the 4th not gate (94), between this second and an input of door (91) and square-wave generator (1)
It is provided with the 5th not gate (95), between another input and ground connection, is provided with the second electric capacity (96), described 4th not gate (94)
It is connected with negative pulse level conversion unit (5)；
Described positive pulse drive branch road (6), negative pulse drive branch road (7) by driving small-signal unit (14) being sequentially connected in series,
Power tube unit (15) and main circuit take and can form by unit (16), and described coupling transformer (4) primary side and primary side have respectively
Having a primary coil and at least 2 secondary coils, these at least 2 secondary coils are further divided at least 1 VTpSecondary coil
At least 1 VTnSecondary coil；
Described acceleration NE (12) is connected in series in the primary coil of coupling transformer (13), the V of coupling transformer (13)Tp
Secondary coil and VTnSecondary coil is all connected in corresponding driving small-signal unit (14) driving branch road；
Described driving small-signal unit (14) farther includes filtration module (141), metal-oxide-semiconductor (142) and is positioned at filtration module
(141) the first diode (143), between metal-oxide-semiconductor (142), this filtration module (141) is connected with VTn secondary coil, this MOS
Grid and the source electrode of pipe (142) are connected with high-potential output end and the electronegative potential outfan of VTp secondary coil respectively；
Described main circuit takes and can farther include to store electric capacity (161), the second diode (162) and 2 series connection by unit (16)
Current-limiting resistance (163), described storage electric capacity (91) is connected with the drain electrode of metal-oxide-semiconductor (72) driving small-signal unit (7), and described the
Two diodes (92) are positioned between the contact of the current-limiting resistance (93) of 2 series connection and the contact of metal-oxide-semiconductor (72) and storage electric capacity, drive
The source electrode of the metal-oxide-semiconductor of dynamic small-signal unit (5) is connected to the grid of power tube (81), described power tube in power tube unit (8)
The drain electrode of unit (8) and source electrode are respectively as the positive pole of main circuit and negative pole.
Any pulsewidth MOSFET electrical switch drive circuit the most according to claim 1, it is characterised in that: described power tube
Power tube (151) in unit (15) is made up of the first power MOS pipe and the second power MOS tube parallel.
Any pulsewidth MOSFET electrical switch drive circuit the most according to claim 1, it is characterised in that: described positive pulse
Level conversion unit (4), negative pulse level conversion unit (5) are by push-pull circuit (10), high-voltage MOS pipe (11), acceleration network
Unit (12), coupling transformer (13) form.
Any pulsewidth MOSFET electrical switch drive circuit the most according to claim 3, it is characterised in that recommend electricity described in:
Road (10) includes the first power MOS pipe (101), the second power MOS pipe (102) and the 3rd power MOS pipe (103), the second power
Metal-oxide-semiconductor (102) is in parallel with the 3rd power MOS pipe (103), the first power MOS pipe (101) and the second power MOS pipe (102) and the
Three power MOS pipes (103) are connected.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810728802.2A CN109495098B (en) | 2016-08-30 | 2016-08-30 | Compact electronic switch driving circuit |
| CN201610763775.3A CN106208631B (en) | 2016-08-30 | 2016-08-30 | Any pulsewidth MOSFET electronic switch driving circuit |
| CN201810728801.8A CN109495099B (en) | 2016-08-30 | 2016-08-30 | Arbitrary pulse width type low power electronic switch |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610763775.3A CN106208631B (en) | 2016-08-30 | 2016-08-30 | Any pulsewidth MOSFET electronic switch driving circuit |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810728801.8A Division CN109495099B (en) | 2016-08-30 | 2016-08-30 | Arbitrary pulse width type low power electronic switch |
| CN201810728802.2A Division CN109495098B (en) | 2016-08-30 | 2016-08-30 | Compact electronic switch driving circuit |
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| Publication Number | Publication Date |
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| CN106208631A true CN106208631A (en) | 2016-12-07 |
| CN106208631B CN106208631B (en) | 2019-07-23 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610763775.3A Active CN106208631B (en) | 2016-08-30 | 2016-08-30 | Any pulsewidth MOSFET electronic switch driving circuit |
| CN201810728801.8A Active CN109495099B (en) | 2016-08-30 | 2016-08-30 | Arbitrary pulse width type low power electronic switch |
| CN201810728802.2A Active CN109495098B (en) | 2016-08-30 | 2016-08-30 | Compact electronic switch driving circuit |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201810728801.8A Active CN109495099B (en) | 2016-08-30 | 2016-08-30 | Arbitrary pulse width type low power electronic switch |
| CN201810728802.2A Active CN109495098B (en) | 2016-08-30 | 2016-08-30 | Compact electronic switch driving circuit |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108540117A (en) * | 2018-03-14 | 2018-09-14 | 湖北楚航电子科技有限公司 | A kind of high power PIN RF switch driving circuits |
| CN112713760A (en) * | 2020-12-01 | 2021-04-27 | 北京无线电测量研究所 | Parallel redundant ferrite switch driver |
| CN113556108A (en) * | 2021-06-21 | 2021-10-26 | 成都天通电子科技有限公司 | Pulse modulator with any pulse width |
Families Citing this family (1)
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Also Published As
| Publication number | Publication date |
|---|---|
| CN109495099A (en) | 2019-03-19 |
| CN106208631B (en) | 2019-07-23 |
| CN109495099B (en) | 2022-06-21 |
| CN109495098B (en) | 2022-07-19 |
| CN109495098A (en) | 2019-03-19 |
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