CN103475240A - Gapless lightning impulse voltage generator - Google Patents
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- CN103475240A CN103475240A CN201310398742XA CN201310398742A CN103475240A CN 103475240 A CN103475240 A CN 103475240A CN 201310398742X A CN201310398742X A CN 201310398742XA CN 201310398742 A CN201310398742 A CN 201310398742A CN 103475240 A CN103475240 A CN 103475240A
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Abstract
The invention relates to a gapless lightning impulse voltage generator. The gapless lightning impulse voltage generator is characterized in that the gapless lightning impulse voltage generator comprises a supply transformer T with the main edge connected with a charging source. One end of the auxiliary edge of the supply transformer T is connected with the ground, the other end of the auxiliary edge of the supply transformer T is connected with an emitting electrode of an insulated gate bipolar transistor VT0, a collector electrode of the insulated gate bipolar transistor VT0 is connected with a protective resistor r in series and then connected to an emitting electrode of an insulated gate bipolar transistor VT, a collector electrode of the insulated gate bipolar transistor VT is connected to a positive electrode of a charging capacitor C through a discharge resistor rt, a negative electrode of the charging capacitor C is connected to the emitting electrode of the insulated gate bipolar transistor VT, the positive electrode of the charging capacitor C is connected to one end of a high-voltage experimental article ZX through a wavefront resistor rf, the other end of the high-voltage experimental article ZX is connected with the ground, the supply transformer T is connected to the emitting electrode of the insulated gate bipolar transistor VT0, and a charging resistor R is connected to the collector electrode of the insulated gate bipolar transistor VT0. The gapless lightning impulse voltage generator has the advantages of being free of mistaken movement, easy to operate and control, high in work frequency, small in drive circuit power and the like.
Description
Technical field
The present invention relates to a kind of lightning impulse voltage generating means, be specifically related to a kind of gapless lightning impulse voltage generator.
Background technology
Along with the development of super UHV Transmission Engineering, the lightning impulse voltage generator has become one of visual plant of each high-voltage test chamber, utilizes the lightning impulse voltage generator to carry out lightning impulse voltage test to high-tension apparatus.High Voltage Impulse Waveform must be accurately in test, the too high easy damage equipment of surge voltage amplitude, the too low test objective that do not reach of surge voltage amplitude.
As shown in Figure 1, traditional lightning impulse voltage generator loop relies on and to puncture air to conduct the mode efficiency of voltage low, and poor anti jamming capability, control difficulty large, the malfunction of air balls gap or tripping situation often occur.Ball-gap discharge has dispersiveness, affected by atmospheric conditions, dust, sphere state etc., therefore with switching device, replace the ball discharge gap, can improve the service behaviour of lightning impulse voltage generator, realize the control of flexible and convenient, be significant in a lot of tests.
Summary of the invention
The object of the present invention is to provide a kind of gapless lightning impulse voltage generator, solve existing generating means and exist efficiency low, poor anti jamming capability, control difficulty large, the problem of the malfunction of air balls gap or tripping often occurs.
For solving above-mentioned technical problem, the present invention by the following technical solutions:
Scheme one: a kind of gapless lightning impulse voltage generator, comprise the supply transformer T that main limit is connected with charge power supply, one end ground connection of the secondary of supply transformer T, the other end is connected with the emitter of insulated gate bipolar transistor VT0, the collector electrode of insulated gate bipolar transistor VT0 and protective resistance r series connection, be connected to again the emitter of insulated gate bipolar transistor VT, the collector electrode of insulated gate bipolar transistor VT is the positive pole to charging capacitor C through discharge resistance rt, the negative pole of charging capacitor C is connected to the emitter of insulated gate bipolar transistor VT, the positive pole of described charging capacitor C is connected to the end of high pressure test product ZX after wavefront resistance rf, the other end ground connection of high pressure test product ZX, the grid G 0 of wherein said insulated gate bipolar transistor VT0 and the grid G of insulated gate bipolar transistor VT all are connected to drive circuit.
Further technical scheme is, the negative pole of described charging capacitor C is connected with charging resistor R; Described insulated gate bipolar transistor VT, discharge resistance rt, charging capacitor C, wavefront resistance rf and charging resistor R are interconnected to constitute and discharge and recharge the generation group, and this gapless lightning impulse voltage generator comprises at least two groups in parallel generation group that discharges and recharges successively: every group discharges and recharges insulated gate bipolar transistor VT(1 in the generation group ... n) emitter all is connected to the last charging resistor R that discharges and recharges the generation group; Every group discharges and recharges insulated gate bipolar transistor VT(1 in the generation group ... n) collector electrode all is connected to last group and discharges and recharges wavefront resistance rf(1 in the generation group ... n) end, high pressure test product ZX is connected to last group and discharges and recharges wavefront resistance rf(1 in the generation group ... n) end; Every group discharges and recharges insulated gate bipolar transistor VT(1 in the generation group ... n) grid G (1 ... n) all be connected to drive circuit.
Further technical scheme is, described drive circuit mainly connects the photoelectric coupling loop by single-chip microcomputer and forms, be provided with the equal hydraulic circuit of grid between the grid of described insulated gate bipolar transistor VT and emitter, be provided with static state voltage equipoise loop and dynamic voltage balancing loop between the collector and emitter of described insulated gate bipolar transistor VT.
Further technical scheme is, the equal hydraulic circuit of described grid mainly consists of mutual serial connection Zener diode DQ and direction diode DF, wherein the negative pole of Zener diode DQ is connected to the emitter of insulated gate bipolar transistor VT, and the negative pole of direction diode DF is connected to the grid of insulated gate bipolar transistor VT.
Further technical scheme is, described static state voltage equipoise loop mainly consists of the resistance R T between the collector and emitter that is connected to insulated gate bipolar transistor VT, described dynamic voltage balancing loop mainly consists of with serial connection capacitor C S resistance R S and diode DS parallel connection, wherein the positive pole of diode DS is connected to the collector electrode of insulated gate bipolar transistor VT, and the end of described capacitor C S is connected to the emitter of insulated gate bipolar transistor VT.
Insulated gate bipolar transistor abbreviation IGBT (Insulated Gate Bipolar Transistor), the compound full-control type voltage driven type power semiconductor be comprised of BJT (double pole triode) and MOS (insulating gate type field effect tube), have the advantage of low conduction voltage drop two aspects of the high input impedance of MOSFET and GTR concurrently.The GTR saturation pressure reduces, and current carrying density is large, but drive current is larger; The MOSFET driving power is very little, and switching speed is fast, but conduction voltage drop is large, and current carrying density is little.IGBT combines the advantage of above two kinds of devices, and the little and saturation pressure of driving power reduces.Be applicable to very much being applied to direct voltage and be 600V and above converter system as fields such as alternating current machine, frequency converter, Switching Power Supply, lighting circuit, Traction Drives.
Scheme two: a kind of gapless lightning impulse voltage generator, comprise the supply transformer T that main limit is connected with charge power supply, the secondary one end ground connection of supply transformer T, the other end is connected with the negative pole of controllable silicon D0, the positive pole serial connection protective resistance r of controllable silicon D0, be connected to again the negative pole of controllable silicon D, the positive pole of controllable silicon D is the positive pole to charging capacitor C through discharge resistance rt, the negative pole of charging capacitor C is connected to the negative pole of controllable silicon D, the positive pole of described charging capacitor C is connected to the end of high pressure test product ZX after wavefront resistance rf, the other end ground connection of high pressure test product ZX, the grid G 0 of wherein said controllable silicon D0 and the grid G of controllable silicon D all are connected to drive circuit.
Further technical scheme is, the negative pole of described charging capacitor C is connected with charging resistor R; Described controllable silicon D, discharge resistance rt, charging capacitor C, wavefront resistance rf and charging resistor R are interconnected to constitute and discharge and recharge the generation group, and this gapless lightning impulse voltage generator comprises at least two groups in parallel generation group that discharges and recharges successively: every group discharges and recharges controllable silicon D(1 in the generation group ... n) negative pole all is connected to the last charging resistor R that discharges and recharges the generation group; Every group discharges and recharges controllable silicon D(1 in the generation group ... n) positive pole all is connected to wavefront resistance rf(1 in last group of electric discharge generation group ... n) end, high pressure test product ZX is connected to wavefront resistance rf(1 in last group electric discharge generation group ... n) end; Every group discharges and recharges controllable silicon D(1 in the generation group ... n) grid G (1 ... n) all be connected to drive circuit.
Further technical scheme is, described drive circuit mainly connects the photoelectric coupling loop by single-chip microcomputer and forms, be provided with the equal hydraulic circuit of grid between the grid of described controllable silicon D and negative pole, be provided with static state voltage equipoise loop and dynamic voltage balancing loop between the positive pole of described controllable silicon D and negative pole.
Further technical scheme is, the equal hydraulic circuit of described grid mainly consists of mutual serial connection Zener diode DQ and direction diode DF, wherein the negative pole of Zener diode DQ is connected to the negative pole of controllable silicon D, and the negative pole of direction diode DF is connected to the grid of controllable silicon D.
Further technical scheme is, described static state voltage equipoise loop mainly consists of the resistance R T between the positive pole that is connected to controllable silicon D and negative pole; Described dynamic voltage balancing loop mainly consists of with serial connection capacitor C S resistance R S and diode DS parallel connection, and wherein the positive pole of diode DS is connected to the negative pole of controllable silicon D, and the end of described capacitor C S is connected to the positive pole of controllable silicon D.
Compared with prior art, the invention has the beneficial effects as follows: the invention solves the difficult control of conventional impact voltage generator discharge voltage waveform, high energy consumption, low-repetition-frequency and the short defect of switch life, advantages such as having without malfunction, easily control, operating frequency is high, drive circuit power is little, can be applicable to the high voltage test of modern super extra-high voltage equipment.
The accompanying drawing explanation
Fig. 1 is existing lightning impulse voltage generator circuit connection layout.
Fig. 2 is the circuit connection diagram that a kind of gapless lightning impulse voltage of the present invention generator uses insulated gate bipolar transistor.
Fig. 3 is the circuit connection diagram that a kind of gapless lightning impulse voltage of the present invention generator uses a preferred embodiment of insulated gate bipolar transistor.
Fig. 4 is that a kind of gapless lightning impulse voltage of the present invention generator uses the silicon controlled circuit connection diagram.
A kind of gapless lightning impulse voltage of Fig. 5 the present invention generator uses the circuit connection diagram of a preferred embodiment of controllable silicon.
The drive circuit connection layout that Fig. 6 is a preferred embodiment of a kind of gapless lightning impulse voltage generator of the present invention shown in Fig. 3 or Fig. 5.
Fig. 7 is equalizer circuit connection layout in preferred embodiment of a kind of gapless lightning impulse voltage of the present invention shown in Fig. 3 generator.
Fig. 8 is equalizer circuit connection layout in preferred embodiment of a kind of gapless lightning impulse voltage of the present invention shown in Fig. 5 generator.
Embodiment
In order to make purpose of the present invention, technical scheme and advantage clearer, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein, only in order to explain the present invention, is not intended to limit the present invention.
A kind of embodiment of gapless lightning impulse voltage generator according to the present invention: a kind of gapless lightning impulse voltage generator, comprise the supply transformer T that main limit is connected with charge power supply, one end ground connection of the secondary of supply transformer T, the other end is connected with the emitter of insulated gate bipolar transistor VT0, the collector electrode of insulated gate bipolar transistor VT0 and protective resistance r series connection, be connected to again the emitter of insulated gate bipolar transistor VT, the collector electrode of insulated gate bipolar transistor VT is the positive pole to charging capacitor C through discharge resistance rt, the negative pole of charging capacitor C is connected to the emitter of insulated gate bipolar transistor VT, the positive pole of described charging capacitor C is connected to the end of high pressure test product ZX after wavefront resistance rf, the other end ground connection of high pressure test product ZX, the grid G 0 of wherein said insulated gate bipolar transistor VT0 and the grid G of insulated gate bipolar transistor VT all are connected to drive circuit.
Fig. 2 shows a preferred embodiment of a kind of gapless lightning impulse voltage of the present invention generator, and the negative pole of described charging capacitor C is connected with charging resistor R; Described insulated gate bipolar transistor VT, discharge resistance rt, charging capacitor C, wavefront resistance rf and charging resistor R are interconnected to constitute and discharge and recharge the generation group, and this gapless lightning impulse voltage generator comprises at least two groups in parallel generation group that discharges and recharges successively: every group discharges and recharges insulated gate bipolar transistor VT(1 in the generation group ... n) emitter all is connected to the last charging resistor R that discharges and recharges the generation group; Every group discharges and recharges insulated gate bipolar transistor VT(1 in the generation group ... n) collector electrode all is connected to last group and discharges and recharges wavefront resistance rf(1 in the generation group ... n) end, high pressure test product ZX is connected to last group and discharges and recharges wavefront resistance rf(1 in the generation group ... n) end; Every group discharges and recharges insulated gate bipolar transistor VT(1 in the generation group ... n) grid G (1 ... n) all be connected to drive circuit.
Fig. 3, Fig. 6 and Fig. 7 show another preferred embodiment of a kind of gapless lightning impulse voltage of the present invention generator, described drive circuit mainly connects the photoelectric coupling loop by single-chip microcomputer and forms, be provided with the equal hydraulic circuit of grid between the grid of described insulated gate bipolar transistor VT and emitter, be provided with static state voltage equipoise loop and dynamic voltage balancing loop between the collector and emitter of described insulated gate bipolar transistor VT.
Another preferred embodiment of a kind of gapless lightning impulse voltage generator according to the present invention, the equal hydraulic circuit of described grid mainly consists of mutual serial connection Zener diode DQ and direction diode DF, wherein the negative pole of Zener diode DQ is connected to the emitter of insulated gate bipolar transistor VT, and the negative pole of direction diode DF is connected to the grid of insulated gate bipolar transistor VT.Can utilize the effect of Zener diode clamper to be controlled the voltage of insulated gate bipolar transistor VT.
The principle of the equal hydraulic circuit of grid is: when the voltage of insulated gate bipolar transistor VT, during lower than the clamp voltage of Zener diode DQ, control circuit is failure to actuate; Once the voltage of insulated gate bipolar transistor VT is higher than Zener diode DQ voltage, Zener diode DQ is breakdown, and extra voltage will be added to grid, makes insulated gate bipolar transistor VT be tending towards conducting, thereby reduces terminal voltage.
Another preferred embodiment of a kind of gapless lightning impulse voltage generator according to the present invention, described static state voltage equipoise loop mainly consists of the resistance R T between the collector and emitter that is connected to insulated gate bipolar transistor VT, described dynamic voltage balancing loop mainly consists of with serial connection capacitor C S resistance R S and diode DS parallel connection, wherein the positive pole of diode DS is connected to the collector electrode of insulated gate bipolar transistor VT, and the end of described capacitor C S is connected to the emitter of insulated gate bipolar transistor VT.
The quiescent voltage equilibrium can be realized by each device two ends grading resistor in parallel in the static state voltage equipoise loop.At the resistance R T of collector electrode certain resistance in parallel with the emitter two ends, when two IGBT series connection, the RT value is that IGBT turn-offs resistance value R
off.
Computing formula:
the FZ400R65KE3 type IGBT of Germany company of Infineon (infineon) issue in June, V
cES=6500V, drain voltage (shutoff voltage) I
cES=5mA, get V
cES=5000V, obtain R
off=1M Ω (consider and bear voltage difference in 10% between series IGBT, can not choose too much, otherwise reach, all do not press purpose by static voltage sharing; Resistance is too little can be produced than lossy.Generally get IGBT and close 1/10th of resistance break,
parallel resistance RT=100k Ω) another preferred embodiment of a kind of gapless lightning impulse voltage generator according to the present invention, described dynamic voltage balancing loop mainly consists of with serial connection capacitor C S resistance R S and diode DS parallel connection, wherein the positive pole of diode DS is connected to the collector electrode of insulated gate bipolar transistor VT, and the end of described capacitor C S is connected to the emitter of insulated gate bipolar transistor VT.
The operation principle in dynamic voltage balancing loop is: when indivedual IGBT shorting advances or while turn-offing in advance, certainly lead to peak voltage, DS shunt capacitance CS is passed through at two ends at IGBT, peak voltage must first be charged to CS, the rate of climb of the peak voltage at IGBT two ends is subject to the restriction of CS like this, and can, by the CS dividing potential drop that is connected in parallel on each IGBT two ends, by CS, realize the equilibrium to dynamic peak voltage.In IGBT conduction period, due to the unilateal conduction characteristic of DS, CS bleeds off the electric charge of storage by RS, IGBT, in order to absorb the surge voltage produced when IGBT turn-offs next time.So the RCD buffer circuit in present technique not only plays stepless action, can also do excess voltage protection.
A kind of gapless lightning impulse voltage of the present invention generator uses the course of work of insulated gate bipolar transistor VT:
Charging process, it is open-minded that single-chip microcomputer sends signal controlling VT0, and VT1～VTn turn-offs, and supply transformer T passes through rectifier D to n impact capacitor C charged in parallel.After charging, impact condenser voltage and equal the charge power supply commutating voltage.
Discharge process, single-chip microcomputer sends signal and turn-offs VT0, opens VT1～VTn, because R1～Rn and rt1～rtn are large than rf1～rfn resistance, can be considered as open circuit in the electric discharge starting stage, so n impact capacitor C can be considered the series connection form, output produces the surge voltage of n times of voltage source.
It is worthy of note: in Fig. 2, Fig. 3, Fig. 7 and above-described embodiment, VT0～VTn and VT describe and add in order to distinguish and to facilitate, all refer to insulated gate bipolar transistor (IGBT), charging resistor R and R1～Rn, wavefront resistance rf and rf1～rfn, discharge resistance rt and rt1～rtn, grid G and G1～Gn and the good C1～Cn of charging capacitor C etc. are all in like manner.
A kind of embodiment of gapless lightning impulse voltage generator according to the present invention: a kind of gapless lightning impulse voltage generator, comprise the supply transformer T that main limit is connected with charge power supply, the secondary one end ground connection of supply transformer T, the other end is connected with the negative pole of controllable silicon D0, the positive pole serial connection protective resistance r of controllable silicon D0, be connected to again the negative pole of controllable silicon D, the positive pole of controllable silicon D is the positive pole to charging capacitor C through discharge resistance rt, the negative pole of charging capacitor C is connected to the negative pole of controllable silicon D, the positive pole of described charging capacitor C is connected to the end of high pressure test product ZX after wavefront resistance rf, the other end ground connection of high pressure test product ZX, the grid G 0 of wherein said controllable silicon D0 and the grid G of controllable silicon D all are connected to drive circuit.
Fig. 4 shows a preferred embodiment of a kind of gapless lightning impulse voltage of the present invention generator, and the negative pole of described charging capacitor C is connected with charging resistor R; Described controllable silicon D, discharge resistance rt, charging capacitor C, wavefront resistance rf and charging resistor R are interconnected to constitute and discharge and recharge the generation group, and this gapless lightning impulse voltage generator comprises at least two groups in parallel generation group that discharges and recharges successively: every group discharges and recharges controllable silicon D(1 in the generation group ... n) negative pole all is connected to the last charging resistor R that discharges and recharges the generation group; Every group discharges and recharges controllable silicon D(1 in the generation group ... n) positive pole all is connected to wavefront resistance rf(1 in last group of electric discharge generation group ... n) end, high pressure test product ZX is connected to wavefront resistance rf(1 in last group electric discharge generation group ... n) end; Every group discharges and recharges controllable silicon D(1 in the generation group ... n) grid G (1 ... n) all be connected to drive circuit.
Fig. 5, Fig. 6 and Fig. 8 show a preferred embodiment of a kind of gapless lightning impulse voltage of the present invention generator, described drive circuit mainly connects the photoelectric coupling loop by single-chip microcomputer and forms, be provided with the equal hydraulic circuit of grid between the grid of described controllable silicon D and negative pole, be provided with static state voltage equipoise loop and dynamic voltage balancing loop between the positive pole of described controllable silicon D and negative pole.
Another preferred embodiment of a kind of gapless lightning impulse voltage generator according to the present invention, the equal hydraulic circuit of described grid mainly consists of mutual serial connection Zener diode DQ and direction diode DF, wherein the negative pole of Zener diode DQ is connected to the negative pole of controllable silicon D, and the negative pole of direction diode DF is connected to the grid of controllable silicon D.Can utilize the effect of Zener diode DQ clamper to be controlled the voltage of controllable silicon D.
The principle of the equal hydraulic circuit of grid is: when the voltage of controllable silicon D, during lower than the clamp voltage of Zener diode DQ, control circuit is failure to actuate; Once the voltage of controllable silicon D is higher than zener diode voltage DQ, Zener diode DQ is breakdown, and extra voltage will be added to grid, makes controllable silicon D be tending towards conducting, thereby reduces terminal voltage.
Another preferred embodiment of a kind of gapless lightning impulse voltage generator according to the present invention, described static state voltage equipoise loop mainly consists of the resistance R T between the positive pole that is connected to controllable silicon D and negative pole; Described dynamic voltage balancing loop mainly consists of with serial connection capacitor C S resistance R S and diode DS parallel connection, and wherein the positive pole of diode DS is connected to the negative pole of controllable silicon D, and the end of described capacitor C S is connected to the positive pole of controllable silicon D.
The quiescent voltage equilibrium can be realized by each device two ends grading resistor in parallel in the static state voltage equipoise loop.At resistance R T anodal and negative pole two ends certain resistance in parallel, when two controllable silicon D series connection, the RT value is that controllable silicon D turn-offs resistance value R
off.
Computing formula:
v
cES=6500V, leakage current (cut-off current) I
cES=5mA, get V
cES=5000V, obtain R
off=1M Ω (consider and bear voltage difference in 10% between serial connection controllable silicon D, can not choose too much, otherwise reach, all do not press purpose by static voltage sharing; Resistance is too little can be produced than lossy.Generally get controllable silicon D and close 1/10th of resistance break,
parallel resistance RT=100k Ω).
The operation principle in dynamic voltage balancing loop is: when indivedual controllable silicon D shorting advances or while turn-offing in advance, certainly lead to peak voltage, DS shunt capacitance CS is passed through at two ends at controllable silicon D, peak voltage must first be charged to CS, the rate of climb of the peak voltage at controllable silicon D two ends is subject to the restriction of CS like this, and can, by the CS dividing potential drop that is connected in parallel on each controllable silicon D two ends, by CS, realize the equilibrium to dynamic peak voltage.In controllable silicon D conduction period, due to the unilateal conduction characteristic of DS, CS bleeds off the electric charge of storage by RS, controllable silicon D, in order to absorb the surge voltage produced when controllable silicon D turn-offs next time.So the RCD buffer circuit in present technique not only plays stepless action, can also do excess voltage protection.
A kind of gapless lightning impulse voltage of the present invention generator use controllable silicon D the course of work:
Charging process, it is open-minded that single-chip microcomputer sends signal controlling D0, and D1～Dn turn-offs, and supply transformer T passes through rectifier D to n impact capacitor C charged in parallel.After charging, impact condenser voltage and equal the charge power supply commutating voltage.
Discharge process, single-chip microcomputer sends signal and turn-offs D0, opens D1～Dn, because R1～Rn and rt1～rtn are large than rf1～rfn resistance, can be considered as open circuit in the electric discharge starting stage, so n impact capacitor C can be considered the series connection form, output produces the surge voltage of n times of voltage source.
It is worthy of note: in Fig. 4, Fig. 5, Fig. 8 and above-described embodiment, D0～Dn and D describe and add in order to distinguish and to facilitate, all refer to controllable silicon, charging resistor R and R1～Rn, wavefront resistance rf and rf1～rfn, discharge resistance rt and rt1～rtn, grid G and G1～Gn and the good C1～Cn of charging capacitor C etc. are all in like manner.
The present invention has designed multiple voltage equalizing protection measure and Drive and Control Circuit, to guarantee switching device shifter, brings into play the good effect of cut-offfing in charging and discharging circuit.Progress along with power electronic technology, the IGBT of higher voltage withstand class or controllable silicon will come into operation, be expected to replace IGBT or silicon controlled connection in series-parallel to use, the series of problems that IGBT or controllable silicon in serial connection cause has not when the time comes existed yet, circuit also will be simplified more, and this mode will be used in a large number.
Characteristics of the present invention: (1) gapless, adopted automatic controlled high pressure high pass capacity switch, can be rapidly under the triggering of pulse signal, action exactly, reduced the volume of whole device, improve space availability ratio.(2) eliminate the electromagnetic noise brought when the igniting of air balls gap punctures, avoid the electromagnetic pollution to human body and environment.
Claims (10)
1. a gapless lightning impulse voltage generator, it is characterized in that: comprise the supply transformer T that main limit is connected with charge power supply, one end ground connection of the secondary of supply transformer T, the other end is connected with the emitter of insulated gate bipolar transistor VT0, the collector electrode of insulated gate bipolar transistor VT0 and protective resistance r series connection, be connected to again the emitter of insulated gate bipolar transistor VT, the collector electrode of insulated gate bipolar transistor VT is the positive pole to charging capacitor C through discharge resistance rt, the negative pole of charging capacitor C is connected to the emitter of insulated gate bipolar transistor VT, the positive pole of described charging capacitor C is connected to the end of high pressure test product ZX after wavefront resistance rf, the other end ground connection of high pressure test product ZX, the grid G 0 of wherein said insulated gate bipolar transistor VT0 and the grid G of insulated gate bipolar transistor VT all are connected to drive circuit.
2. a kind of gapless lightning impulse voltage generator according to claim 1, it is characterized in that: the negative pole of described charging capacitor C is connected with charging resistor R; Described insulated gate bipolar transistor VT, discharge resistance rt, charging capacitor C, wavefront resistance rf and charging resistor R are interconnected to constitute and discharge and recharge the generation group, and this gapless lightning impulse voltage generator comprises at least two groups in parallel generation group that discharges and recharges successively: every group discharges and recharges insulated gate bipolar transistor VT(1 in the generation group ... n) emitter all is connected to the last charging resistor R that discharges and recharges the generation group; Every group discharges and recharges insulated gate bipolar transistor VT(1 in the generation group ... n) collector electrode all is connected to last group and discharges and recharges wavefront resistance rf(1 in the generation group ... n) end, high pressure test product ZX is connected to last group and discharges and recharges wavefront resistance rf(1 in the generation group ... n) end; Every group discharges and recharges insulated gate bipolar transistor VT(1 in the generation group ... n) grid G (1 ... n) all be connected to drive circuit.
3. a kind of gapless lightning impulse voltage generator according to claim 1 and 2, it is characterized in that: described drive circuit mainly connects the photoelectric coupling loop by single-chip microcomputer and forms, be provided with the equal hydraulic circuit of grid between the grid of described insulated gate bipolar transistor VT and emitter, be provided with static state voltage equipoise loop and dynamic voltage balancing loop between the collector and emitter of described insulated gate bipolar transistor VT.
4. a kind of gapless lightning impulse voltage generator according to claim 3, it is characterized in that: the equal hydraulic circuit of described grid mainly consists of mutual serial connection Zener diode DQ and direction diode DF, wherein the negative pole of Zener diode DQ is connected to the emitter of insulated gate bipolar transistor VT, and the negative pole of direction diode DF is connected to the grid of insulated gate bipolar transistor VT.
5. a kind of gapless lightning impulse voltage generator according to claim 3, it is characterized in that: described static state voltage equipoise loop mainly consists of the resistance R T between the collector and emitter that is connected to insulated gate bipolar transistor VT, described dynamic voltage balancing loop mainly consists of with serial connection capacitor C S resistance R S and diode DS parallel connection, wherein the positive pole of diode DS is connected to the collector electrode of insulated gate bipolar transistor VT, and the end of described capacitor C S is connected to the emitter of insulated gate bipolar transistor VT.
6. a gapless lightning impulse voltage generator, it is characterized in that: comprise the supply transformer T that main limit is connected with charge power supply, the secondary one end ground connection of supply transformer T, the other end is connected with the negative pole of controllable silicon D0, the positive pole serial connection protective resistance r of controllable silicon D0, be connected to again the negative pole of controllable silicon D, the positive pole of controllable silicon D is the positive pole to charging capacitor C through discharge resistance rt, the negative pole of charging capacitor C is connected to the negative pole of controllable silicon D, the positive pole of described charging capacitor C is connected to the end of high pressure test product ZX after wavefront resistance rf, the other end ground connection of high pressure test product ZX, the grid G 0 of wherein said controllable silicon D0 and the grid G of controllable silicon D all are connected to drive circuit.
7. a kind of gapless lightning impulse voltage generator according to claim 6, it is characterized in that: the negative pole of described charging capacitor C is connected with charging resistor R; Described controllable silicon D, discharge resistance rt, charging capacitor C, wavefront resistance rf and charging resistor R are interconnected to constitute and discharge and recharge the generation group, and this gapless lightning impulse voltage generator comprises at least two groups in parallel generation group that discharges and recharges successively: every group discharges and recharges controllable silicon D(1 in the generation group ... n) negative pole all is connected to the last charging resistor R that discharges and recharges the generation group; Every group discharges and recharges controllable silicon D(1 in the generation group ... n) positive pole all is connected to wavefront resistance rf(1 in last group of electric discharge generation group ... n) end, high pressure test product ZX is connected to wavefront resistance rf(1 in last group electric discharge generation group ... n) end; Every group discharges and recharges controllable silicon D(1 in the generation group ... n) grid G (1 ... n) all be connected to drive circuit.
8. according to the described a kind of gapless lightning impulse voltage generator of claim 6 or 7, it is characterized in that: described drive circuit mainly connects the photoelectric coupling loop by single-chip microcomputer and forms, be provided with the equal hydraulic circuit of grid between the grid of described controllable silicon D and negative pole, be provided with static state voltage equipoise loop and dynamic voltage balancing loop between the positive pole of described controllable silicon D and negative pole.
9. a kind of gapless lightning impulse voltage generator according to claim 8, it is characterized in that: the equal hydraulic circuit of described grid mainly consists of mutual serial connection Zener diode DQ and direction diode DF, wherein the negative pole of Zener diode DQ is connected to the negative pole of controllable silicon D, and the negative pole of direction diode DF is connected to the grid of controllable silicon D.
10. a kind of gapless lightning impulse voltage generator according to claim 8, it is characterized in that: described static state voltage equipoise loop mainly consists of the resistance R T between the positive pole that is connected to controllable silicon D and negative pole; Described dynamic voltage balancing loop mainly consists of with serial connection capacitor C S resistance R S and diode DS parallel connection, and wherein the positive pole of diode DS is connected to the negative pole of controllable silicon D, and the end of described capacitor C S is connected to the positive pole of controllable silicon D.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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| CN111551829A (en) * | 2019-12-27 | 2020-08-18 | 广东电网有限责任公司电力科学研究院 | Oscillation type operation impulse voltage generator, impulse withstand voltage detection system and method |
| CN115549651A (en) * | 2022-11-26 | 2022-12-30 | 昆明理工大学 | Impulse current generator for simulating multiple lightning strokes |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103954809A (en) * | 2014-03-19 | 2014-07-30 | 南京信息工程大学 | 250/2500 [mu]s operation impact voltage generator |
| CN104267223A (en) * | 2014-10-21 | 2015-01-07 | 云南电网公司普洱供电局 | Low-voltage multi-frequency and amplitude mixed test source generating device |
| CN104267223B (en) * | 2014-10-21 | 2017-01-25 | 云南电网公司普洱供电局 | Low-voltage multi-frequency and amplitude mixed test source generating device |
| CN108196100A (en) * | 2018-03-06 | 2018-06-22 | 北京华天机电研究所有限公司 | The multiple counterattack wave impact current feedback circuit realized using vacuum switch |
| CN111551829A (en) * | 2019-12-27 | 2020-08-18 | 广东电网有限责任公司电力科学研究院 | Oscillation type operation impulse voltage generator, impulse withstand voltage detection system and method |
| CN115549651A (en) * | 2022-11-26 | 2022-12-30 | 昆明理工大学 | Impulse current generator for simulating multiple lightning strokes |
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