CN106209044A - MOSFET electrical switch drive circuit - Google Patents

MOSFET electrical switch drive circuit Download PDF

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Publication number
CN106209044A
CN106209044A CN201610763883.0A CN201610763883A CN106209044A CN 106209044 A CN106209044 A CN 106209044A CN 201610763883 A CN201610763883 A CN 201610763883A CN 106209044 A CN106209044 A CN 106209044A
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CN
China
Prior art keywords
unit
edge detection
branch road
detection unit
electrical switch
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201610763883.0A
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Chinese (zh)
Inventor
陈鹏
黄学军
于辉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SUZHOU 3CTEST ELECTRONIC TECHNOLOGY Co Ltd
Original Assignee
SUZHOU 3CTEST ELECTRONIC TECHNOLOGY Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by SUZHOU 3CTEST ELECTRONIC TECHNOLOGY Co Ltd filed Critical SUZHOU 3CTEST ELECTRONIC TECHNOLOGY Co Ltd
Priority to CN201610763883.0A priority Critical patent/CN106209044A/en
Publication of CN106209044A publication Critical patent/CN106209044A/en
Pending legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/693Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K5/00Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/13Arrangements having a single output and transforming input signals into pulses delivered at desired time intervals

Abstract

The open a kind of MOSFET electrical switch drive circuit of the present invention, including: square-wave generator, low level edge detection unit, high level edge detection unit, positive pulse level conversion unit, negative pulse level conversion unit, positive pulse drive branch road, negative pulse to drive branch road;It is connected to low level edge detection unit and the respective input of high level edge detection unit for producing the square-wave generator triggering square-wave signal;Described positive pulse drives branch road, negative pulse to drive branch road to be taken can form by unit by driving small-signal unit, power tube unit and the main circuit being sequentially connected in series, described coupling transformer primary side and primary side are respectively provided with a primary coil and at least 2 secondary coils, a Zener diode and the first diode connected, filtration module parallel connection.The present invention can realize any width of driving pulse, it is not necessary to extra power supply, had both greatly reduced electrical switch drive circuit volume, and had accelerated again electrical switch rising front, and electrical switch drive circuit power demand significantly reduces.

Description

MOSFET electrical switch drive circuit
Technical field
The invention belongs to power electronic devices applied technical field, particularly relate to a kind of MOSFET electrical switch and drive electricity Road.
Background technology
Miniaturization any pulsewidth MOSFET electrical switch many employings active transformer coupled modes.This driving circuit principle Although Pulse of Arbitrary width can be realized, but, it is not suitable for array MOSFET electrical switch.Trace it to its cause and be, this driving Insulating power supply substantial amounts needed for circuit, is difficulty with Miniaturization Design.Above-mentioned technical problem how is overcome to become this area skill The direction that art personnel make great efforts.
Summary of the invention
It is an object of the present invention to provide a kind of MOSFET electrical switch drive circuit, this MOSFET electrical switch drive circuit can Realizing any width of driving pulse, it is not necessary to a large amount of insulating power supplies, drive circuit volume is the least, drives power minimum.
For reaching above-mentioned purpose, the technical solution used in the present invention is: a kind of MOSFET electrical switch drive circuit, bag Include: square-wave generator, low level edge detection unit, high level edge detection unit, positive pulse level conversion unit, negative pulse Level conversion unit, positive pulse drive branch road, negative pulse to drive branch road;For producing the square-wave generator triggering square-wave signal even Receive low level edge detection unit and the respective input of high level edge detection unit, described low level edge detection unit Branch road is driven to be sequentially connected with negative pulse level conversion unit and negative pulse, described high level edge detection unit and positive pulse electricity Flat converting unit and positive pulse drive branch road to be sequentially connected with;
Described high level edge detection unit farther include to be sequentially connected in series first with door, high level derivative module, first non- Door and the second not gate, this first is connected with square-wave generator with an input of door, sets between another input and ground connection Being equipped with the first electric capacity, described second not gate is connected with positive pulse level conversion unit;
Described low level edge detection unit farther include to be sequentially connected in series second with door, low level derivative module, the 3rd non- Door and the 4th not gate, this second and of door be provided with the 5th not gate between input and square-wave generator, another input Being provided with the second electric capacity between end and ground connection, described 4th not gate is connected with negative pulse level conversion unit;
Described positive pulse drives branch road, negative pulse to drive branch road by the driving small-signal unit being sequentially connected in series, power tube unit Taking can form by unit with main circuit, described coupling transformer primary side and primary side are respectively provided with a primary coil and at least 2 Individual secondary coil, these at least 2 secondary coils are further divided at least 1 VTpSecondary coil and at least 1 VTnSecondary coil;
Described acceleration NE is connected in series in the primary coil of coupling transformer, the V of coupling transformerTpSecondary coil and VTnSecondary coil is all connected on the corresponding driving small-signal unit driving branch road, and described acceleration NE is by R in parallelvElectricity Resistance and CvElectric capacity composes in parallel;
Described driving small-signal unit farther include filtration module, metal-oxide-semiconductor and between filtration module, metal-oxide-semiconductor first Diode, this filtration module is connected with VTn secondary coil, and the grid of this metal-oxide-semiconductor and source electrode are electric with the height of VTp secondary coil respectively Position outfan and electronegative potential outfan connect, a Zener diode and the first diode connected, filtration module parallel connection;
Described main circuit take can unit farther include store electric capacity, the second diode and 2 series connection current-limiting resistances, described in deposit Storage electric capacity is connected with the drain electrode of the metal-oxide-semiconductor driving small-signal unit, and described second diode is positioned at the current-limiting resistance of 2 series connection Between the contact of contact and metal-oxide-semiconductor and storage electric capacity, the source electrode of the metal-oxide-semiconductor of small-signal unit is driven to be connected in power tube unit The grid of power tube, the drain electrode of described power tube unit and source electrode are respectively as the positive pole of main circuit and negative pole.
In technique scheme, further improvement project is as follows:
1., in such scheme, the power tube in described power tube unit is by the first power MOS pipe and the second power MOS tube parallel Composition.
2. in such scheme, described positive pulse level conversion unit, negative pulse level conversion unit by push-pull circuit, High-voltage MOS pipe, acceleration NE, coupling transformer composition.
3., in such scheme, described push-pull circuit includes the first power MOS pipe, the second power MOS pipe and the 3rd power Metal-oxide-semiconductor, the second power MOS pipe and the 3rd power MOS tube parallel, the first power MOS pipe and the second power MOS pipe and the 3rd power Metal-oxide-semiconductor is connected.
Owing to technique scheme is used, the present invention compared with prior art has the advantage that
MOSFET electrical switch drive circuit of the present invention, it can realize any width of driving pulse, it is not necessary to a large amount of insulating power supplies, Drive circuit volume is the least, drives power minimum;Power supply significantly reduces, and power is the least, this driving The core of circuit design: first, detection triggers the lead and trail edge of signal, provides foundation for pulse width control;Secondly, utilize Main circuit is drive circuit capacitor energy storage, such that it is able to save insulating power supply;And use from coupling transformer and main circuit Take dipulse injecting power before and after energy unit, it is not necessary to extra power supply, both greatly reduce electrical switch drive circuit volume, Accelerating again electrical switch rising front, electrical switch drive circuit power demand significantly reduces, and is especially suitable for array MOSFET Electrical switch.
Accompanying drawing explanation
Accompanying drawing 1 is MOSFET electrical switch drive circuit partial structurtes schematic diagram of the present invention;
Accompanying drawing 2 is each point voltage oscillogram of the present invention;
Accompanying drawing 3 is positive pulse level shifting circuit structural representation of the present invention;
Accompanying drawing 4 is negative pulse level shifting circuit structural representation of the present invention;
Accompanying drawing 5 is power energy system of the present invention and power unit structure schematic diagram.
In the figures above: 1, square-wave generator;2, low level edge detection unit;3, high level edge detection unit;4、 Positive pulse level conversion unit;5, negative pulse level conversion unit;6, positive pulse drives branch road;7, negative pulse drives branch road;81、 First and door;82, high level derivative module;83, the first not gate;84, the second not gate;85, the first electric capacity;91, second and door; 92, low level derivative module;93, the 3rd not gate;94, the 4th not gate;95, the 5th not gate;96, the second electric capacity;10, electricity is recommended Road;101, the first power MOS pipe;102, push-pull circuit;103, push-pull circuit;11, high-voltage MOS pipe;12, NE is accelerated; 13, coupling transformer;14, small-signal unit is driven;141, filtration module;142, metal-oxide-semiconductor;143, the first diode;15, power Pipe unit;151, power tube;16, main circuit takes energy unit;161, storage electric capacity;162, the second diode;163, current-limiting resistance; 17, Zener diode.
Detailed description of the invention
Below in conjunction with the accompanying drawings and embodiment the invention will be further described:
Embodiment 1: a kind of MOSFET electrical switch drive circuit, including: square-wave generator 1, low level edge detection unit 2, High level edge detection unit 3, positive pulse level conversion unit 4, negative pulse level conversion unit 5, positive pulse driving branch road 6, Negative pulse drives branch road 7;It is connected to low level edge detection unit 2 He for producing the square-wave generator 1 triggering square-wave signal The respective input of high level edge detection unit 3, described low level edge detection unit 2 and negative pulse level conversion unit 5 Branch road 7 is driven to be sequentially connected with negative pulse, described high level edge detection unit 3 and positive pulse level conversion unit 4 and Zheng Mai Punching drives branch road 6 to be sequentially connected with;
Described high level edge detection unit 3 farther include to be sequentially connected in series first with door 81, high level derivative module 82, the One not gate 83 and the second not gate 84, this first is connected with square-wave generator 1 with an input of door 81, another input with Being provided with the first electric capacity 85 between ground connection, described second not gate 84 is connected with positive pulse level conversion unit 4;
Described low level edge detection unit 2 farther include to be sequentially connected in series second with door 91, low level derivative module 92, the Three not gate 93 and the 4th not gates 94, are provided with the 5th not gate between this second and an input and square-wave generator 1 of door 91 95, it is provided with the second electric capacity 96, described 4th not gate 94 and negative pulse level conversion unit 5 between another input and ground connection Connect;
Described positive pulse drives branch road 6, negative pulse to drive branch road 7 by the driving small-signal unit 14 being sequentially connected in series, power tube Unit 15 and main circuit take and can form by unit 16, and described coupling transformer 4 primary side and primary side are respectively provided with a primary line Circle and at least 2 secondary coils, these at least 2 secondary coils are further divided at least 1 VTpSecondary coil and at least 1 VTn Secondary coil;
Described acceleration NE 12 is connected in series in the primary coil of coupling transformer 13, the V of coupling transformer 13TpSecondary Coil and VTnSecondary coil is all connected on the corresponding driving small-signal unit 14 driving branch road, and described acceleration NE is by also The R of connectionvResistance and CvElectric capacity composes in parallel;
Described driving small-signal unit 14 farther includes filtration module 141, metal-oxide-semiconductor 142 and is positioned at filtration module 141, metal-oxide-semiconductor The first diode 143 between 142, this filtration module 141 is connected with VTn secondary coil, the grid of this metal-oxide-semiconductor 142 and source electrode It is connected with high-potential output end and the electronegative potential outfan of VTp secondary coil respectively, a Zener diode 17 and first connected Diode 143, filtration module 141 are in parallel;
Described main circuit takes and can farther include to store electric capacity the 161, second diode 162 and 2 current limliting electricity connected by unit 16 Resistance 163, described storage electric capacity 91 is connected with the drain electrode of the metal-oxide-semiconductor 72 driving small-signal unit 7, and described second diode 92 is positioned at Between the contact of the contact of the current-limiting resistance 93 of 2 series connection and metal-oxide-semiconductor 72 and storage electric capacity, drive the metal-oxide-semiconductor of small-signal unit 5 Source electrode be connected to the grid of power tube 81 in power tube unit 8, the drain electrode of described power tube unit 8 and source electrode are respectively as master The positive pole of circuit and negative pole.
Above-mentioned positive pulse level conversion unit 4, negative pulse level conversion unit 5 are by push-pull circuit 10, high-voltage MOS pipe 11, accelerate NE 12, coupling transformer 13 forms.
Above-mentioned push-pull circuit 10 includes the first power MOS pipe the 101, second power MOS pipe 102 and the 3rd power MOS pipe 103, the second power MOS pipe 102 is in parallel with the 3rd power MOS pipe 103, the first power MOS pipe 101 and the second power MOS pipe 102 Connect with the 3rd power MOS pipe 103.
Turn-on and turn-off represents power tube respectively and turns on and off signal.The high level lasting time of the two divides Do not reflect high level time and the low level time of former driving signal TR.Turn-on and turn-off pulse is respectively used to touch Send out Tp11、Tp12、Tp21、Tp22And Tn11、Tn12, as shown in figs. 1 and 3.
Active transformer can also realize Pulse of Arbitrary width, but, this scheme is not suitable for MOSFET array switch. Reason is that this circuit needs substantial amounts of isolation power supply, limits the miniaturization of electrical switch.
The present embodiment has unique advantage in array electronic switchs the application scenario of (power device series connection number is a lot).It is not Can be only that electrical switch grid provides any pulsewidth to drive power, but also without insulating power supply.Driving of this electrical switch Energy derives from main circuit and the capacitor of capacitor Ck1 and Ck2 is stored energy.
Embodiment 2: a kind of MOSFET electrical switch drive circuit, including: square-wave generator 1, low level rim detection list Unit 2, high level edge detection unit 3, positive pulse level conversion unit 4, negative pulse level conversion unit 5, positive pulse drive and prop up Road 6, negative pulse drive branch road 7;It is connected to low level edge detection unit for producing the square-wave generator 1 triggering square-wave signal 2 and the respective input of high level edge detection unit 3, described low level edge detection unit 2 and negative pulse level conversion list Unit 5 and negative pulse drive branch road 7 to be sequentially connected with, described high level edge detection unit 3 and positive pulse level conversion unit 4 and just Pulsed drive branch road 6 is sequentially connected with;
Described high level edge detection unit 3 farther include to be sequentially connected in series first with door 81, high level derivative module 82, the One not gate 83 and the second not gate 84, this first is connected with square-wave generator 1 with an input of door 81, another input with Being provided with the first electric capacity 85 between ground connection, described second not gate 84 is connected with positive pulse level conversion unit 4;
Described low level edge detection unit 2 farther include to be sequentially connected in series second with door 91, low level derivative module 92, the Three not gate 93 and the 4th not gates 94, are provided with the 5th not gate between this second and an input and square-wave generator 1 of door 91 95, it is provided with the second electric capacity 96, described 4th not gate 94 and negative pulse level conversion unit 5 between another input and ground connection Connect;
Described positive pulse drives branch road 6, negative pulse to drive branch road 7 by the driving small-signal unit 14 being sequentially connected in series, power tube Unit 15 and main circuit take and can form by unit 16, and described coupling transformer 4 primary side and primary side are respectively provided with a primary line Circle and at least 2 secondary coils, these at least 2 secondary coils are further divided at least 1 VTpSecondary coil and at least 1 VTn Secondary coil;
Described acceleration NE 12 is connected in series in the primary coil of coupling transformer 13, the V of coupling transformer 13TpSecondary Coil and VTnSecondary coil is all connected on the corresponding driving small-signal unit 14 driving branch road, and described acceleration NE is by also The R of connectionvResistance and CvElectric capacity composes in parallel;
Described driving small-signal unit 14 farther includes filtration module 141, metal-oxide-semiconductor 142 and is positioned at filtration module 141, metal-oxide-semiconductor The first diode 143 between 142, this filtration module 141 is connected with VTn secondary coil, the grid of this metal-oxide-semiconductor 142 and source electrode It is connected with high-potential output end and the electronegative potential outfan of VTp secondary coil respectively, a Zener diode 17 and first connected Diode 143, filtration module 141 are in parallel;
Described main circuit takes and can farther include to store electric capacity the 161, second diode 162 and 2 current limliting electricity connected by unit 16 Resistance 163, described storage electric capacity 91 is connected with the drain electrode of the metal-oxide-semiconductor 72 driving small-signal unit 7, and described second diode 92 is positioned at Between the contact of the contact of the current-limiting resistance 93 of 2 series connection and metal-oxide-semiconductor 72 and storage electric capacity, drive the metal-oxide-semiconductor of small-signal unit 5 Source electrode be connected to the grid of power tube 81 in power tube unit 8, the drain electrode of described power tube unit 8 and source electrode are respectively as master The positive pole of circuit and negative pole.
Power tube 151 in above-mentioned power tube unit 15 is made up of the first power MOS pipe and the second power MOS tube parallel.
Above-mentioned positive pulse level conversion unit 4, negative pulse level conversion unit 5 are by push-pull circuit 10, high-voltage MOS pipe 11, accelerate NE 12, coupling transformer 13 forms.
Turn-on and turn-off represents power tube respectively and turns on and off signal.The high level lasting time of the two divides Do not reflect high level time and the low level time of former driving signal TR.Turn-on and turn-off pulse is respectively used to touch Send out Tp11、Tp12、Tp21、Tp22And Tn11、Tn12, as shown in figs. 1 and 3.
Active transformer can also realize Pulse of Arbitrary width, but, this scheme is not suitable for MOSFET array switch. Reason is that this circuit needs substantial amounts of isolation power supply, limits the miniaturization of electrical switch.
The present embodiment has unique advantage in array electronic switchs the application scenario of (power device series connection number is a lot).It is not Can be only that electrical switch grid provides any pulsewidth to drive power, but also without insulating power supply.Driving of this electrical switch Energy derives from main circuit and the capacitor of capacitor Ck1 and Ck2 is stored energy.
When using above-mentioned MOSFET electrical switch drive circuit, its power supply significantly reduces, and power is the least. The core of this design of drive circuit: first, detection triggers the lead and trail edge of signal, provides foundation for pulse width control; Secondly, utilize main circuit for drive circuit capacitor energy storage, such that it is able to save insulating power supply;And use from coupling transformer Taking with main circuit can dipulse injecting power before and after unit, it is not necessary to extra power supply, had both greatly reduced electrical switch and has driven Circuit volume, accelerates again electrical switch rising front, and electrical switch drive circuit power demand significantly reduces, and is especially suitable for battle array Row MOSFET electrical switch.
Above-described embodiment, only for technology design and the feature of the explanation present invention, its object is to allow person skilled in the art Scholar will appreciate that present disclosure and implements according to this, can not limit the scope of the invention with this.All according to the present invention The equivalence that spirit is made changes or modifies, and all should contain within protection scope of the present invention.

Claims (4)

1. a MOSFET electrical switch drive circuit, it is characterised in that: including: square-wave generator (1), low level rim detection Unit (2), high level edge detection unit (3), positive pulse level conversion unit (4), negative pulse level conversion unit (5), just Pulsed drive branch road (6), negative pulse drive branch road (7);It is connected to low for producing the square-wave generator (1) triggering square-wave signal Level edge detection unit (2) and high level edge detection unit (3) respective input, described low level edge detection unit (2) branch road (7) is driven to be sequentially connected with negative pulse level conversion unit (5) and negative pulse, described high level edge detection unit (3) branch road (6) is driven to be sequentially connected with positive pulse level conversion unit (4) and positive pulse;
Described high level edge detection unit (3) farther includes first and door (81), the high level derivative module being sequentially connected in series (82), the first not gate (83) and the second not gate (84), this is first with an input of door (81) with square-wave generator (1) even Connect, between another input and ground connection, be provided with the first electric capacity (85), described second not gate (84) and positive pulse level conversion Unit (4) connects;
Described low level edge detection unit (2) farther includes second and door (91), the low level derivative module being sequentially connected in series (92), the 3rd not gate (93) and the 4th not gate (94), between this second and an input of door (91) and square-wave generator (1) It is provided with the 5th not gate (95), between another input and ground connection, is provided with the second electric capacity (96), described 4th not gate (94) It is connected with negative pulse level conversion unit (5);
Described positive pulse drive branch road (6), negative pulse drive branch road (7) by driving small-signal unit (14) being sequentially connected in series, Power tube unit (15) and main circuit take and can form by unit (16), and described coupling transformer (4) primary side and primary side have respectively Having a primary coil and at least 2 secondary coils, these at least 2 secondary coils are further divided at least 1 VTpSecondary coil At least 1 VTnSecondary coil;
Described acceleration NE (12) is connected in series in the primary coil of coupling transformer (13), the V of coupling transformer (13)Tp Secondary coil and VTnSecondary coil is all connected in corresponding driving small-signal unit (14) driving branch road, described acceleration network list Unit (12) is by R in parallelvResistance and CvElectric capacity composes in parallel;
Described driving small-signal unit (14) farther includes filtration module (141), metal-oxide-semiconductor (142) and is positioned at filtration module (141) the first diode (143), between metal-oxide-semiconductor (142), this filtration module (141) is connected with VTn secondary coil, this MOS Grid and the source electrode of pipe (142) are connected with high-potential output end and the electronegative potential outfan of VTp secondary coil respectively, a voltage stabilizing two Pole pipe (17) and the first diode (143) connected, filtration module (141) parallel connection;
Described main circuit takes and can farther include to store electric capacity (161), the second diode (162) and 2 series connection by unit (16) Current-limiting resistance (163), described storage electric capacity (91) is connected with the drain electrode of metal-oxide-semiconductor (72) driving small-signal unit (7), and described the Two diodes (92) are positioned between the contact of the current-limiting resistance (93) of 2 series connection and the contact of metal-oxide-semiconductor (72) and storage electric capacity, drive The source electrode of the metal-oxide-semiconductor of dynamic small-signal unit (5) is connected to the grid of power tube (81), described power tube in power tube unit (8) The drain electrode of unit (8) and source electrode are respectively as the positive pole of main circuit and negative pole.
MOSFET electrical switch drive circuit the most according to claim 1, it is characterised in that: described power tube unit (15) In power tube (151) be made up of the first power MOS pipe and the second power MOS tube parallel.
MOSFET electrical switch drive circuit the most according to claim 1, it is characterised in that: described positive pulse level conversion Unit (4), negative pulse level conversion unit (5) by push-pull circuit (10), high-voltage MOS pipe (11), accelerate NE (12), Coupling transformer (13) forms.
MOSFET electrical switch drive circuit the most according to claim 3, it is characterised in that: described push-pull circuit (10) wraps Include the first power MOS pipe (101), the second power MOS pipe (102) and the 3rd power MOS pipe (103), the second power MOS pipe (102) in parallel with the 3rd power MOS pipe (103), the first power MOS pipe (101) and the second power MOS pipe (102) and the 3rd merit Rate metal-oxide-semiconductor (103) is connected.
CN201610763883.0A 2016-08-30 2016-08-30 MOSFET electrical switch drive circuit Pending CN106209044A (en)

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Application Number Priority Date Filing Date Title
CN201610763883.0A CN106209044A (en) 2016-08-30 2016-08-30 MOSFET electrical switch drive circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201610763883.0A CN106209044A (en) 2016-08-30 2016-08-30 MOSFET electrical switch drive circuit

Publications (1)

Publication Number Publication Date
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108540117A (en) * 2018-03-14 2018-09-14 湖北楚航电子科技有限公司 A kind of high power PIN RF switch driving circuits
CN108696267A (en) * 2017-04-12 2018-10-23 赤多尼科两合股份有限公司 A kind of field-effect tube driving device, driving method and for electric installation
WO2019075619A1 (en) * 2017-10-16 2019-04-25 科棣姆(上海)电源科技有限公司 Drive circuit for maintaining voltage balance of mos transistors in intermediate frequency plasma power supply
CN112713760A (en) * 2020-12-01 2021-04-27 北京无线电测量研究所 Parallel redundant ferrite switch driver

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108696267A (en) * 2017-04-12 2018-10-23 赤多尼科两合股份有限公司 A kind of field-effect tube driving device, driving method and for electric installation
WO2019075619A1 (en) * 2017-10-16 2019-04-25 科棣姆(上海)电源科技有限公司 Drive circuit for maintaining voltage balance of mos transistors in intermediate frequency plasma power supply
CN108540117A (en) * 2018-03-14 2018-09-14 湖北楚航电子科技有限公司 A kind of high power PIN RF switch driving circuits
CN112713760A (en) * 2020-12-01 2021-04-27 北京无线电测量研究所 Parallel redundant ferrite switch driver

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