CN206135864U - MOSFET electronic switch driving circuit - Google Patents
MOSFET electronic switch driving circuit Download PDFInfo
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- CN206135864U CN206135864U CN201620986306.3U CN201620986306U CN206135864U CN 206135864 U CN206135864 U CN 206135864U CN 201620986306 U CN201620986306 U CN 201620986306U CN 206135864 U CN206135864 U CN 206135864U
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Abstract
The utility model discloses a MOSFET electronic switch driving circuit, include: square wave generator, low level edge detection unit, high level edge detection unit, positive impulse level translation unit, burden impulse level translation unit, positive pulse drive branch road, negative pulse drive branch road, a square wave generator is connected to low level edge detection unit and the respective input of high level edge detection unit for producing trigger square signal, positive pulse drive branch road, negative pulse drive branch road are got by the little signal unit of the drive of establishing ties in proper order, power tube unit and main circuit and to be formed by the unit, coupling transformer primary side and secondary side have a primary and 2 at least secondary coil respectively, and a zener diode is parallelly connected with first diode, the filter module of series connection. The utility model discloses can realize drive pulse's arbitrary width, need not extra power supply, the electronic switch driving circuit volume that has both significantly reduced has accelerateed electronic switch ascending front edge again, and the required power of electronic switch driving circuit reduces by a wide margin.
Description
Technical field
The utility model belongs to power electronic devices applied technical field, more particularly to a kind of MOSFET electronic switches drive
Circuit.
Background technology
Minimize more than any pulsewidth MOSFET electronic switch using active transformer coupled modes.This driving circuit principle
Although being capable of achieving Pulse of Arbitrary width, it is not suitable for array MOSFET electronic switches.Trace it to its cause and be, this driving
Insulating power supply substantial amounts needed for circuit, are difficult to realize Miniaturization Design.Above-mentioned technical problem how is overcome to become this area skill
The direction that art personnel make great efforts.
The content of the invention
The utility model purpose is to provide a kind of MOSFET electronic switches drive circuit, and the MOSFET electronic switches drive electricity
Road is capable of achieving any width of driving pulse, without the need for a large amount of insulating power supplies, drive circuit volume very little, driving power supply power pole
It is little.
To reach above-mentioned purpose, the technical solution adopted in the utility model is:A kind of MOSFET electronic switches drive circuit,
Including:Square-wave generator, low level edge detection unit, high level edge detection unit, positive pulse level conversion unit, negative arteries and veins
Rushing level conversion unit, positive pulse drives branch road, negative pulse to drive branch road;For producing the square-wave generator of triggering square-wave signal
It is connected to low level edge detection unit and the respective input of high level edge detection unit, the low level rim detection list
Unit is sequentially connected with negative pulse level conversion unit and negative pulse driving branch road, the high level edge detection unit and positive pulse
Level conversion unit and positive pulse drive branch road to be sequentially connected;
The high level edge detection unit further include to be sequentially connected in series first with door, high level derivative module, the
One not gate and the second not gate, this first is connected with an input of door with square-wave generator, another input and ground connection
Between be provided with the first electric capacity, second not gate is connected with positive pulse level conversion unit;
The low level edge detection unit further include to be sequentially connected in series second with door, low level derivative module, the
Three not gates and the 4th not gate, this second and of door the 5th not gate is provided between input and square-wave generator, another
The second electric capacity is provided between input and ground connection, the 4th not gate is connected with negative pulse level conversion unit;
The positive pulse drives branch road, negative pulse to drive branch road by driving small-signal unit, the power tube being sequentially connected in series
Unit and main circuit take can unit composition, the coupling transformer primary side and primary side have respectively a primary coil and extremely
Few 2 secondary coils, this at least 2 secondary coils are further divided at least one VTpSecondary coil and at least one VTnSecondary wire
Circle;
The acceleration NE is connected in series in the primary coil of coupling transformer, the V of coupling transformerTpSecondary coil
And VTnSecondary coil is all connected to correspondence and drives on the driving small-signal unit of branch road, described to accelerate NE by R in parallelv
Resistance and CvElectric capacity is composed in parallel;
The driving small-signal unit further includes filtration module, metal-oxide-semiconductor and between filtration module, metal-oxide-semiconductor
First diode, this filtration module is connected with VTn secondary coils, the grid and source electrode of this metal-oxide-semiconductor respectively with VTp secondary coils
High-potential output end and electronegative potential output end connect, and a Zener diode is in parallel with the first diode, filtration module connected;
The main circuit takes the current-limiting resistances that energy unit further includes storage capacitance, the second diode and 2 series connection, institute
State storage capacitance to be connected with the drain electrode of the metal-oxide-semiconductor for driving small-signal unit, second diode is located at the current limliting electricity of 2 series connection
Between the contact and metal-oxide-semiconductor and the contact of storage capacitance of resistance, the source electrode for driving the metal-oxide-semiconductor of small-signal unit is connected to power tube list
The positive pole and negative pole of the grid of power tube in unit, the drain electrode of the power pipe unit and source electrode respectively as main circuit.
Further improvement project is as follows in above-mentioned technical proposal:
1. in such scheme, the power tube in the power pipe unit is by the first power MOS pipe and the second power MOS pipe
Compose in parallel.
2. in such scheme, the positive pulse level conversion unit, negative pulse level conversion unit by push-pull circuit,
High-voltage MOS pipe, acceleration NE, coupling transformer composition.
3. in such scheme, the push-pull circuit includes the first power MOS pipe, the second power MOS pipe and the 3rd power
Metal-oxide-semiconductor, the second power MOS pipe and the 3rd power MOS tube parallel, the first power MOS pipe and the second power MOS pipe and the 3rd power
Metal-oxide-semiconductor is connected.
Because above-mentioned technical proposal is used, the utility model has compared with prior art following advantages:
The utility model MOSFET electronic switch drive circuits, any width of its achievable driving pulse, without the need for a large amount of
Insulating power supply, drive circuit volume very little, driving power supply power is minimum;Power supply significantly reduces, and power very little,
The core of this drive circuit design:First, the lead and trail edge of trigger is detected, for pulse width control foundation is provided;
Secondly, it is drive circuit capacitor energy storage using main circuit, such that it is able to save insulating power supply;And using from coupling transformer
Dipulse injecting power before and after energy unit is taken with main circuit, without the need for extra power supply, electronic switch driving had both been greatly reduced
Circuit volume, accelerates electronic switch rising front again, and electronic switch drive circuit power demand significantly reduces, and is especially suitable for battle array
Row MOSFET electronic switches.
Description of the drawings
Accompanying drawing 1 is the utility model MOSFET electronic switch drive circuit partial structural diagrams;
Accompanying drawing 2 is the utility model each point voltage oscillogram;
Accompanying drawing 3 is the utility model positive pulse level shifting circuit structural representation;
Accompanying drawing 4 is the utility model negative pulse level shifting circuit structural representation;
Accompanying drawing 5 is the utility model power energy system and power unit structure schematic diagram.
In the figures above:1st, square-wave generator;2nd, low level edge detection unit;3rd, high level edge detection unit;4、
Positive pulse level conversion unit;5th, negative pulse level conversion unit;6th, positive pulse drives branch road;7th, negative pulse drives branch road;81、
First and door;82nd, high level derivative module;83rd, the first not gate;84th, the second not gate;85th, the first electric capacity;91st, second and door;
92nd, low level derivative module;93rd, the 3rd not gate;94th, the 4th not gate;95th, the 5th not gate;96th, the second electric capacity;10th, electricity is recommended
Road;101st, the first power MOS pipe;102nd, push-pull circuit;103rd, push-pull circuit;11st, high-voltage MOS pipe;12nd, NE is accelerated;
13rd, coupling transformer;14th, small-signal unit is driven;141st, filtration module;142nd, metal-oxide-semiconductor;143rd, the first diode;15th, power
Pipe unit;151st, power tube;16th, main circuit takes energy unit;161st, storage capacitance;162nd, the second diode;163rd, current-limiting resistance;
17th, Zener diode.
Specific embodiment
Below in conjunction with the accompanying drawings and embodiment is further described to the utility model:
Embodiment 1:A kind of MOSFET electronic switches drive circuit, including:Square-wave generator 1, low level rim detection list
Unit 2, high level edge detection unit 3, positive pulse level conversion unit 4, negative pulse level conversion unit 5, positive pulse drive and prop up
Road 6, negative pulse drives branch road 7;Square-wave generator 1 for producing triggering square-wave signal is connected to low level edge detection unit
2 and the respective input of high level edge detection unit 3, the low level edge detection unit 2 and negative pulse level conversion list
Unit 5 and negative pulse drive branch road 7 to be sequentially connected, the high level edge detection unit 3 and positive pulse level conversion unit 4 and just
Pulsed drive branch road 6 is sequentially connected;
The high level edge detection unit 3 further includes first for being sequentially connected in series and door 81, high level derivative module
82nd, the first not gate 83 and the second not gate 84, this first is connected with an input of door 81 with square-wave generator 1, and another is defeated
Enter end and be provided with the first electric capacity 85 between being grounded, second not gate 84 is connected with positive pulse level conversion unit 4;
The low level edge detection unit 2 further includes second for being sequentially connected in series and door 91, low level derivative module
92nd, the 3rd not gate 93 and the 4th not gate 94, this second and an input and square-wave generator 1 of door 91 between be provided with the 5th
Not gate 95, is provided with the second electric capacity 96, the 4th not gate 94 and negative pulse level conversion between another input and ground connection
Unit 5 connects;
The positive pulse drives branch road 6, negative pulse to drive branch road 7 by the driving small-signal unit 14, work(being sequentially connected in series
Rate pipe unit 15 and main circuit take energy unit 16 and constitute, and the primary side of the coupling transformer 4 and primary side have respectively at the beginning of one
Level coil and at least 2 secondary coils, this at least 2 secondary coils are further divided at least one VTpSecondary coil and at least one
VTnSecondary coil;
The acceleration NE 12 is connected in series in the primary coil of coupling transformer 13, the V of coupling transformer 13TpIt is secondary
Level coil and VTnSecondary coil be all connected to correspondence drive branch road driving small-signal unit 14 on, it is described acceleration NE by
R in parallelvResistance and CvElectric capacity is composed in parallel;
The driving small-signal unit 14 further include filtration module 141, metal-oxide-semiconductor 142 and positioned at filtration module 141,
The first diode 143 between metal-oxide-semiconductor 142, this filtration module 141 is connected with VTn secondary coils, the grid of this metal-oxide-semiconductor 142 and
Source electrode is connected respectively with the high-potential output end and electronegative potential output end of VTp secondary coils, a Zener diode 17 with connect
First diode 143, filtration module 141 are in parallel;
The main circuit takes the limits that energy unit 16 further includes storage capacitance 161, the second diode 162 and 2 series connection
Leakage resistance 163, the storage capacitance 91 is connected with the drain electrode of the metal-oxide-semiconductor 72 for driving small-signal unit 7, second diode 92
Between the contact and metal-oxide-semiconductor 72 and the contact of storage capacitance of the current-limiting resistance 93 of 2 series connection, small-signal unit 5 is driven
The source electrode of metal-oxide-semiconductor is connected to the grid of power tube 81 in power pipe unit 8, and the drain electrode of the power pipe unit 8 and source electrode are distinguished
As the positive pole and negative pole of main circuit.
Above-mentioned positive pulse level conversion unit 4, negative pulse level conversion unit 5 are by push-pull circuit 10, high-voltage MOS pipe
11st, NE 12, coupling transformer 13 is accelerated to constitute.
Above-mentioned push-pull circuit 10 includes the first power MOS pipe 101, the second power MOS pipe 102 and the 3rd power MOS pipe
103, the second power MOS pipe 102 is in parallel with the 3rd power MOS pipe 103, the first power MOS pipe 101 and the second power MOS pipe 102
Connect with the 3rd power MOS pipe 103.
Turn-on and turn-off represent respectively power tube and turn on and off signal.The high level lasting time of the two point
Do not reflect the high level time and low level time of former drive signal TR.Turn-on and turn-off pulses are respectively used to touch
Send out Tp11、Tp12、Tp21、Tp22And Tn11、Tn12, as shown in figs. 1 and 3.
Active transformer can also realize Pulse of Arbitrary width, but, this scheme is not suitable for MOSFET array switch.
Reason is that this circuit needs substantial amounts of isolation power supply, limits the miniaturization of electronic switch.
The present embodiment is switched in array electronic(Power device series connection number is a lot)Application scenario in have unique advantage.It is not
Only any pulsewidth driving power can be provided for electronic switch grid, but also without the need for insulating power supply.The drive of this electronic switch
Energy stores energy from main circuit to the capacitor of capacitor Ck1 and Ck2.
Embodiment 2:A kind of MOSFET electronic switches drive circuit, including:Square-wave generator 1, low level rim detection list
Unit 2, high level edge detection unit 3, positive pulse level conversion unit 4, negative pulse level conversion unit 5, positive pulse drive and prop up
Road 6, negative pulse drives branch road 7;Square-wave generator 1 for producing triggering square-wave signal is connected to low level edge detection unit
2 and the respective input of high level edge detection unit 3, the low level edge detection unit 2 and negative pulse level conversion list
Unit 5 and negative pulse drive branch road 7 to be sequentially connected, the high level edge detection unit 3 and positive pulse level conversion unit 4 and just
Pulsed drive branch road 6 is sequentially connected;
The high level edge detection unit 3 further includes first for being sequentially connected in series and door 81, high level derivative module
82nd, the first not gate 83 and the second not gate 84, this first is connected with an input of door 81 with square-wave generator 1, and another is defeated
Enter end and be provided with the first electric capacity 85 between being grounded, second not gate 84 is connected with positive pulse level conversion unit 4;
The low level edge detection unit 2 further includes second for being sequentially connected in series and door 91, low level derivative module
92nd, the 3rd not gate 93 and the 4th not gate 94, this second and an input and square-wave generator 1 of door 91 between be provided with the 5th
Not gate 95, is provided with the second electric capacity 96, the 4th not gate 94 and negative pulse level conversion between another input and ground connection
Unit 5 connects;
The positive pulse drives branch road 6, negative pulse to drive branch road 7 by the driving small-signal unit 14, work(being sequentially connected in series
Rate pipe unit 15 and main circuit take energy unit 16 and constitute, and the primary side of the coupling transformer 4 and primary side have respectively at the beginning of one
Level coil and at least 2 secondary coils, this at least 2 secondary coils are further divided at least one VTpSecondary coil and at least one
VTnSecondary coil;
The acceleration NE 12 is connected in series in the primary coil of coupling transformer 13, the V of coupling transformer 13TpIt is secondary
Level coil and VTnSecondary coil be all connected to correspondence drive branch road driving small-signal unit 14 on, it is described acceleration NE by
R in parallelvResistance and CvElectric capacity is composed in parallel;
The driving small-signal unit 14 further include filtration module 141, metal-oxide-semiconductor 142 and positioned at filtration module 141,
The first diode 143 between metal-oxide-semiconductor 142, this filtration module 141 is connected with VTn secondary coils, the grid of this metal-oxide-semiconductor 142 and
Source electrode is connected respectively with the high-potential output end and electronegative potential output end of VTp secondary coils, a Zener diode 17 with connect
First diode 143, filtration module 141 are in parallel;
The main circuit takes the limits that energy unit 16 further includes storage capacitance 161, the second diode 162 and 2 series connection
Leakage resistance 163, the storage capacitance 91 is connected with the drain electrode of the metal-oxide-semiconductor 72 for driving small-signal unit 7, second diode 92
Between the contact and metal-oxide-semiconductor 72 and the contact of storage capacitance of the current-limiting resistance 93 of 2 series connection, small-signal unit 5 is driven
The source electrode of metal-oxide-semiconductor is connected to the grid of power tube 81 in power pipe unit 8, and the drain electrode of the power pipe unit 8 and source electrode are distinguished
As the positive pole and negative pole of main circuit.
Power tube 151 in above-mentioned power pipe unit 15 is made up of the first power MOS pipe and the second power MOS tube parallel.
Above-mentioned positive pulse level conversion unit 4, negative pulse level conversion unit 5 are by push-pull circuit 10, high-voltage MOS pipe
11st, NE 12, coupling transformer 13 is accelerated to constitute.
Turn-on and turn-off represent respectively power tube and turn on and off signal.The high level lasting time of the two point
Do not reflect the high level time and low level time of former drive signal TR.Turn-on and turn-off pulses are respectively used to touch
Send out Tp11、Tp12、Tp21、Tp22And Tn11、Tn12, as shown in figs. 1 and 3.
Active transformer can also realize Pulse of Arbitrary width, but, this scheme is not suitable for MOSFET array switch.
Reason is that this circuit needs substantial amounts of isolation power supply, limits the miniaturization of electronic switch.
The present embodiment is switched in array electronic(Power device series connection number is a lot)Application scenario in have unique advantage.It is not
Only any pulsewidth driving power can be provided for electronic switch grid, but also without the need for insulating power supply.The drive of this electronic switch
Energy stores energy from main circuit to the capacitor of capacitor Ck1 and Ck2.
During using above-mentioned MOSFET electronic switches drive circuit, its power supply significantly reduces, and power very little.
The core of this drive circuit design:First, the lead and trail edge of trigger is detected, for pulse width control foundation is provided;
Secondly, it is drive circuit capacitor energy storage using main circuit, such that it is able to save insulating power supply;And using from coupling transformer
Dipulse injecting power before and after energy unit is taken with main circuit, without the need for extra power supply, electronic switch driving had both been greatly reduced
Circuit volume, accelerates electronic switch rising front again, and electronic switch drive circuit power demand significantly reduces, and is especially suitable for battle array
Row MOSFET electronic switches.
Above-described embodiment only to illustrate technology design of the present utility model and feature, its object is to allow and be familiar with technique
Personage will appreciate that content of the present utility model and implement according to this, protection domain of the present utility model can not be limited with this.
All equivalence changes made according to the utility model Spirit Essence or modification, all should cover protection domain of the present utility model it
It is interior.
Claims (4)
1. a kind of MOSFET electronic switches drive circuit, it is characterised in that:Including:Square-wave generator(1), low level rim detection
Unit(2), high level edge detection unit(3), positive pulse level conversion unit(4), negative pulse level conversion unit(5), just
Pulsed drive branch road(6), negative pulse drive branch road(7);For producing the square-wave generator of triggering square-wave signal(1)It is connected to low
Level edge detection unit(2)With high level edge detection unit(3)Respective input, the low level edge detection unit
(2)With negative pulse level conversion unit(5)Branch road is driven with negative pulse(7)It is sequentially connected, the high level edge detection unit
(3)With positive pulse level conversion unit(4)Branch road is driven with positive pulse(6)It is sequentially connected;
The high level edge detection unit(3)Further include first and door being sequentially connected in series(81), high level derivative module
(82), the first not gate(83)With the second not gate(84), this first and door(81)An input and square-wave generator(1)Even
Connect, between another input and ground connection the first electric capacity is provided with(85), second not gate(84)With positive pulse level conversion
Unit(4)Connection;
The low level edge detection unit(2)Further include second and door being sequentially connected in series(91), low level derivative module
(92), the 3rd not gate(93)With the 4th not gate(94), this second and door(91)An input and square-wave generator(1)Between
It is provided with the 5th not gate(95), between another input and ground connection the second electric capacity is provided with(96), the 4th not gate(94)
With negative pulse level conversion unit(5)Connection;
The positive pulse drives branch road(6), negative pulse drive branch road(7)By the driving small-signal unit being sequentially connected in series(14)、
Power pipe unit(15)Taking with main circuit can unit(16)Composition, the coupling transformer(4)Primary side and primary side have respectively
There are a primary coil and at least 2 secondary coils, this at least 2 secondary coils are further divided at least one VTpSecondary coil
With at least one VTnSecondary coil;
The acceleration NE(12)With coupling transformer(13)Primary coil be connected in series in, coupling transformer(13)VTp
Secondary coil and VTnSecondary coil is all connected to the driving small-signal unit that correspondence drives branch road(14)On, the acceleration network list
Unit(12)By R in parallelvResistance and CvElectric capacity is composed in parallel;
The driving small-signal unit(14)Further include filtration module(141), metal-oxide-semiconductor(142)With positioned at filtration module
(141), metal-oxide-semiconductor(142)Between the first diode(143), this filtration module(141)It is connected with VTn secondary coils, this MOS
Pipe(142)Grid and source electrode be connected with the high-potential output end and electronegative potential output end of VTp secondary coils respectively, a voltage stabilizing two
Pole pipe(17)With the first diode connected(143), filtration module(141)It is in parallel;
The main circuit takes can unit(16)Further include storage capacitance(161), the second diode(162)With 2 series connection
Current-limiting resistance(163), the storage capacitance(91)With driving small-signal unit(7)Metal-oxide-semiconductor(72)Drain electrode connection, described the
Two diodes(92)Positioned at the current-limiting resistance of 2 series connection(93)Contact and metal-oxide-semiconductor(72)And the contact of storage capacitance between, drive
Dynamic small-signal unit(5)The source electrode of metal-oxide-semiconductor be connected to power pipe unit(8)Middle power tube(81)Grid, the power tube
Unit(8)Drain electrode and source electrode respectively as main circuit positive pole and negative pole.
2. MOSFET electronic switches drive circuit according to claim 1, it is characterised in that:The power pipe unit(15)
In power tube(151)It is made up of the first power MOS pipe and the second power MOS tube parallel.
3. MOSFET electronic switches drive circuit according to claim 1, it is characterised in that:The positive pulse level conversion
Unit(4), negative pulse level conversion unit(5)By push-pull circuit(10), high-voltage MOS pipe(11), accelerate NE(12)、
Coupling transformer(13)Composition.
4. MOSFET electronic switches drive circuit according to claim 3, it is characterised in that:The push-pull circuit(10)Bag
Include the first power MOS pipe(101), the second power MOS pipe(102)With the 3rd power MOS pipe(103), the second power MOS pipe
(102)With the 3rd power MOS pipe(103)Parallel connection, the first power MOS pipe(101)With the second power MOS pipe(102)With the 3rd work(
Rate metal-oxide-semiconductor(103)Series connection.
Priority Applications (1)
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CN201620986306.3U CN206135864U (en) | 2016-08-30 | 2016-08-30 | MOSFET electronic switch driving circuit |
Applications Claiming Priority (1)
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CN201620986306.3U CN206135864U (en) | 2016-08-30 | 2016-08-30 | MOSFET electronic switch driving circuit |
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CN206135864U true CN206135864U (en) | 2017-04-26 |
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ID=58565537
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CN201620986306.3U Active CN206135864U (en) | 2016-08-30 | 2016-08-30 | MOSFET electronic switch driving circuit |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106209044A (en) * | 2016-08-30 | 2016-12-07 | 苏州泰思特电子科技有限公司 | MOSFET electrical switch drive circuit |
CN109495098A (en) * | 2016-08-30 | 2019-03-19 | 苏州泰思特电子科技有限公司 | Compact electronic switch driving circuit |
-
2016
- 2016-08-30 CN CN201620986306.3U patent/CN206135864U/en active Active
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106209044A (en) * | 2016-08-30 | 2016-12-07 | 苏州泰思特电子科技有限公司 | MOSFET electrical switch drive circuit |
CN109495098A (en) * | 2016-08-30 | 2019-03-19 | 苏州泰思特电子科技有限公司 | Compact electronic switch driving circuit |
CN109495098B (en) * | 2016-08-30 | 2022-07-19 | 苏州泰思特电子科技有限公司 | Compact electronic switch driving circuit |
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