CN115694459A - Circuit and method for high-speed isolation driving MOSFET with adjustable pulse width - Google Patents
Circuit and method for high-speed isolation driving MOSFET with adjustable pulse width Download PDFInfo
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- CN115694459A CN115694459A CN202211425248.3A CN202211425248A CN115694459A CN 115694459 A CN115694459 A CN 115694459A CN 202211425248 A CN202211425248 A CN 202211425248A CN 115694459 A CN115694459 A CN 115694459A
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Abstract
The invention discloses a circuit and a method for high-speed isolation driving of a metal-oxide-semiconductor field effect transistor (MOSFET) with adjustable pulse width, wherein the circuit structure comprises a driving signal isolation transmission module, a MOSFET conduction control switch and a MOSFET turn-off control switch; the driving signal isolation transmission module is used for transmitting the pulse driving signal to the secondary end of the transformer in an isolation manner; the MOSFET conduction control switch is used for controlling the first MOSFET Q 1 The input capacitor charging circuit is formed and turned off; the MOSFET turn-off control switch is used for controlling the first MOSFET Q 1 The input capacitance discharge circuit is formed and closed. The invention can realize that the pulse width of the output signal generated by the high-speed isolation driving MOSFET is adjustable within the range of nanosecond to second, has the advantages of simple structure, reliable performance, low cost and the like, and is favorable for popularization in a large-scale market.
Description
Technical Field
The invention belongs to the technical field of electronic circuits, and particularly relates to a circuit and a method for high-speed isolation driving of an MOSFET (metal-oxide-semiconductor field effect transistor) with adjustable pulse width.
Background
With the continuous progress of modern power electronic technology, the working performance of semiconductor MOSFET devices such as power MOSFET, high voltage MOSFET, etc. is continuously improved, and the semiconductor MOSFET devices become main switching devices in high-speed high-voltage switching circuits due to the characteristics of excellent switching characteristics, higher voltage withstanding values, etc.
The high-speed high-voltage switch circuit is widely applied to the fields of laser technology, nuclear physics, insulation test and the like, and usually requires an isolation driving switch device to realize the bias of high-voltage pulse and the series connection of multiple pipes to improve the output voltage. The isolation method of the isolation driving MOSFET circuit commonly used at present comprises two types of optical coupling isolation and pulse transformer isolation. Because the optical coupling isolation requires an additional isolation power supply, the system is large in size, and the withstand voltage value is generally less than 10kV, so that the optical coupling isolation is only suitable for occasions with low requirements on the amplitude of the output voltage. The traditional pulse transformer isolation driving circuit has the advantages of good linearity of driving signals, large isolation voltage, realization of multi-path synchronous output and the like, but the pulse width of the isolation driving signals is often required to be within a certain range; when the pulse width is too large, the transformer generates a magnetic core saturation phenomenon, so that the pulse width of the output voltage of the isolation driving MOSFET circuit is smaller, and therefore, an output signal with adjustable pulse width from nanosecond to second cannot be generated by adopting a pulse transformer isolation mode. The existence of these problems greatly limits the application scenarios of high-speed and high-voltage switching circuits using MOSFETs as switching devices, especially in scientific research such as laser technology, dielectric polarization research, and high-voltage chopper switching technology.
MOSFET is a semiconductor device for controlling output end by using electric field effect of input end, and its gate electrode is SiO 2 The existence of the insulating layer theoretically has the gate current of 0, but under the action of factors such as the overlapping of metalized parts on the MOSFET structure, the PCB layout of a circuit, the device packaging and the like, the parasitic parameters such as input capacitance and the like exist at the gate input end of the MOSFET. Therefore, the MOSFET is switched overThe process is a process of charging and discharging the input capacitor by the driving signal, and the process needs certain current driving capability. And setting mutually independent input capacitor charging and discharging loops, wherein in the time interval of arrival of the charging pulse driving signal and the discharging pulse driving signal, the voltage at two ends of the input capacitor of the MOSFET is always greater than the starting voltage of the MOSFET, and the conduction state of the MOSFET is maintained, so that the pulse width of an output signal generated by the isolation driving MOSFET is the same as the difference between arrival moments of the charging pulse driving signal and the discharging pulse driving signal. By changing the difference between the arrival time of the two signals, the pulse width of the output signal generated by the high-speed isolation driving MOSFET can be adjusted within the range of nanosecond to second.
Disclosure of Invention
In order to solve the problems, the invention provides a circuit and a method for high-speed isolation driving MOSFET with adjustable pulse width, which utilize the input capacitance of MOSFET and adopt mutually independent input capacitance charging and discharging loop structures, in the time interval of arrival of a charging pulse driving signal and a discharging pulse driving signal, the voltage at two ends of the input capacitance of MOSFET is always larger than the starting voltage of MOSFET, the conducting state of MOSFET is maintained, and the pulse width of the output signal generated by the isolation driving MOSFET is the same as the arrival time difference of the charging pulse driving signal and the discharging pulse driving signal. The pulse width of the output signal can be adjusted within the range from nanosecond to second by adjusting the difference between the arrival time of the charging pulse driving signal and the arrival time of the discharging pulse driving signal.
In order to achieve the above object, the present invention provides a circuit of a high-speed isolation driving MOSFET with adjustable pulse width, comprising: the driving signal isolation transmission module, the MOSFET on control switch and the MOSFET off control switch are arranged in the circuit board;
the driving signal isolation transmission module is used for transmitting the pulse driving signal to the secondary end of the transformer in an isolation manner;
the MOSFET conduction control switch is used for controlling the first MOSFET Q 1 The input capacitor charging circuit is formed and turned off;
the MOSFET turn-off control switch is used for controlling the first MOSFET Q 1 The input capacitance discharge circuit is formed and turned off.
Preferably, the drive signal isolation transmission module comprises a first transformer T 1 A first diode D 1 A second transformer T 2 A second diode D 2 ；
A charging pulse driving signal from the first transformer T 1 The primary side of the first transformer T 1 And the second dotted terminal of (2) and the first diode D 1 The first transformer T 1 And the second different name terminal of the first diode D 1 The anode of (2) is connected; the discharge pulse driving signal is supplied from the second transformer T 2 The primary side of the second transformer T 2 And the second dotted terminal of (D) and the second diode 2 The cathode of the second transformer T 2 And the second different name terminal of the second diode D 2 The anode of (2) is connected;
the MOSFET conduction control switch comprises a third diode D 3 ；
The third diode D 3 And the first transformer T 1 Is connected to the second dotted terminal of the third diode D 3 Cathode of and first MOSFET Q 1 The gate of (1) is connected;
the MOSFET turn-off control switch comprises a second MOSFET Q 2 ；
The second MOSFET Q 2 And the second transformer T 2 Is connected to the secondary dotted terminal of the second MOSFET Q 2 And the second transformer T 2 Said second MOSFET Q 2 And the first MOSFET Q 1 The first MOSFET Q 1 Is connected to the positive supply + HV, the first MOSFET Q 1 Is connected to a negative supply-HV.
Preferably, the difference between the voltages of the positive power supply + HV and the negative power supply-HV is the first MOSFET Q 1 The drain-source withstand voltage is any value within the range.
Preferably, the output signal generated by the high speed isolation drive MOSFET is derived from the second output signalA MOSFET Q 1 Is taken at the drain of (1).
Preferably, the pulse width of the output signal generated by the high-speed isolation driving MOSFET is the same as the difference between arrival times of the charging pulse driving signal and the discharging pulse driving signal.
Preferably, the first diode D 1 The second diode D 2 Are all Zener diodes, the third diode D 3 Is a schottky diode.
Preferably, the first diode D is used when a negative pulse occurs on the secondary side of the pulse transformer 1 The second diode D 2 Form a follow current loop with the secondary coil of the transformer in the loop respectively to prevent the third diode D 3 Voltage across and the second MOSFET Q 2 The voltage between the grid and the source exceeds the reverse maximum voltage withstanding value of the third diode D 3 And the second MOSFET Q 2 Providing protection.
The invention also provides a method for driving the MOSFET with adjustable pulse width in a high-speed isolation mode, which comprises the following steps:
when the charging pulse driving signal arrives, the current is isolated by the first transformer T of the transmission module through the driving signal 1 And a first diode D 1 Isolated transmission to the third diode D of the MOSFET conduction control switch 3 Controlling the first transformer T 1 Secondary coil, third diode D 3 And a first MOSFET Q 1 Input capacitance C iss Forming a charging loop to make the first MOSFET Q 1 The conduction is rapid;
when the discharge pulse driving signal arrives, the current is isolated by the driving signal and transmitted by the second transformer T of the module 2 And a second diode D 2 Isolated transmission to MOSFET turn-off control switch second MOSFET Q 2 Controlling the first MOSFET Q 1 Input capacitance C iss A second MOSFET Q 2 And a negative power supply-HV forming a discharge circuit for the first MOSFET Q 1 And quickly cut off.
Compared with the prior art, the invention has the following advantages and technical effects:
the invention provides a circuit and a method for driving an MOSFET (metal-oxide-semiconductor field effect transistor) in an isolation mode with adjustable pulse width at high speed, wherein a driving circuit structurally comprises a driving signal isolation transmission module, an MOSFET on control switch and an MOSFET off control switch, so that the pulse width of an output signal generated by the MOSFET in the isolation driving at high speed can be adjusted within a range from nanosecond to second, and the circuit and the method have the advantages of simple structure, reliable performance, low cost and the like, and are favorable for popularization in a large-scale market.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this application, are included to provide a further understanding of the application, and the description of the exemplary embodiments of the application are intended to be illustrative of the application and are not intended to limit the application. In the drawings:
FIG. 1 is a schematic diagram of an isolated driving circuit according to the present invention;
FIG. 2 is a charging current flow diagram for the isolated drive circuit of the present invention;
FIG. 3 is a discharge current flow diagram for the isolated drive circuit of the present invention;
FIG. 4 is a signal timing diagram of the isolated driving circuit of the present invention.
Detailed Description
It should be noted that the embodiments and features of the embodiments in the present application may be combined with each other without conflict. The present application will be described in detail below with reference to the embodiments with reference to the attached drawings.
Example one
Referring to fig. 1, the present invention provides a circuit of a high-speed isolation driving MOSFET with adjustable pulse width, comprising: the drive signal isolation transmission module, the MOSFET switch-on control switch and the MOSFET switch-off control switch are arranged in the circuit board;
the driving signal isolation transmission module is used for transmitting the pulse driving signal to the secondary end of the transformer in an isolation manner;
the MOSFET turn-on control switch is used for controlling the first MOSFET Q 1 The input capacitor charging circuit is formed and turned off;
MOSFET turn-off control switch for controlling the first MOSFET Q 1 The input capacitance discharge circuit is formed and closed.
Specifically, the drive signal isolation transmission module comprises a first transformer T 1 A first diode D 1 A second transformer T 2 A second diode D 2 ；
The charging pulse drives the signal from the first transformer T 1 Primary side input of, a first transformer T 1 Secondary dotted terminal and first diode D 1 Is connected to the cathode of a first transformer T 1 And the second synonym terminal and the first diode D 1 The anode of (2) is connected; the discharge pulse driving signal is supplied from the second transformer T 2 Primary side input of, a second transformer T 2 Secondary dotted terminal of and a second diode D 2 Is connected to the cathode of a second transformer T 2 And a second diode D 2 The anode of (2) is connected;
the MOSFET turn-on control switch comprises a third diode D 3 ；
Third diode D 3 Anode and first transformer T 1 Is connected to the second dotted terminal of the third diode D 3 Cathode of and first MOSFET Q 1 The gate of (1) is connected;
the MOSFET turn-off control switch comprises a second MOSFET Q 2 ；
Second MOSFET Q 2 Grid and second transformer T 2 Is connected to the second dotted terminal of the second MOSFET Q 2 Source electrode of and the second transformer T 2 Is connected to the second synonym terminal of a second MOSFET Q 2 And the first MOSFET Q 1 Of the first MOSFET Q 1 Is connected to the positive supply + HV, a first MOSFET Q 1 Is connected to a negative supply-HV.
Specifically, the voltage difference between the positive power supply + HV and the negative power supply-HV is the first MOSFET Q 1 The drain-source withstand voltage is any value within the range.
Specifically, the output signal generated by the high speed isolation drive MOSFET is derived from the first MOSFET Q 1 Is taken at the drain of (1).
Specifically, the pulse width of the output signal generated by the high-speed isolation driving MOSFET is the same as the difference between the arrival times of the charging pulse driving signal and the discharging pulse driving signal.
In particular, a first diode D 1 A second diode D 2 Are Zener diode, and the third diode D 3 Is a schottky diode.
Specifically, when the secondary side of the pulse transformer generates negative pulse, the first diode D 1 A second diode D 2 Respectively form a follow current loop with the secondary coil of the transformer in the loop to prevent the third diode D 3 Both terminal voltage and second MOSFET Q 2 The voltage between the grid and the source exceeds the reverse maximum voltage withstanding value thereof and is a third diode D 3 And a second MOSFET Q 2 Providing protection.
Example two
The invention also provides a method for high-speed isolation driving MOSFET with adjustable pulse width, when a charging pulse driving signal arrives, referring to figure 2, current passes through a first transformer T of a driving signal isolation transmission module 1 And a first diode D 1 Isolated transmission to the third diode D of the MOSFET conduction control switch 3 Controlling the first transformer T 1 Secondary winding-third diode D 3 -first MOSFET Q 1 Input capacitance C iss Forming a charging loop to make the first MOSFET Q 1 The conduction is rapid; when the discharge pulse driving signal arrives, referring to fig. 3, the current is isolated by the second transformer T of the transmission module through the driving signal 2 And a second diode D 2 Isolated transmission to MOSFET turn-off control switch second MOSFET Q 2 Controlling the first MOSFET Q 1 Input capacitance C iss -a second MOSFET Q 2 -a negative power supply-HV forms a discharge circuit, making said first MOSFET Q 1 And quickly cut off.
Referring to fig. 4, the working timing sequence of a high-speed isolation driving MOSFET with adjustable pulse width in nanosecond to second order in a single driving cycle is as follows:
the charging pulse driving signal is at t 0 Coming all the time through the first transformer T 1 Synchronous isolated transmission through a first diode D 1 And a second diode D 2 In the first placeMOSFET Q 1 An input capacitor C is formed between the gate and the source iss Charging circuit for charging the first MOSFET Q 1 At t 0 And the time is synchronously conducted.
Third diode D at the end of the charging pulse drive signal 2 The first MOSFET Q is reversely cut off due to its unidirectional conductivity 1 The charging circuit of the input capacitor is turned off and the first MOSFET Q is turned off 1 The voltage across the input capacitor of (1) maintains the value at the end of the charge.
After the adjustable time interval from nanosecond to second, the discharge driving pulse signal is at t 1 Coming at all times through a second transformer T 2 Isolating transmission to make the second MOSFET Q 2 On the first MOSFET Q 1 An input capacitor discharge circuit is formed between the gate and the source to make the first MOSFET Q 1 At t 2 And synchronously turning off the time.
At the end of the discharge pulse drive signal, the second MOSFET Q 2 Off when the first MOSFET Q 1 Has dropped to 0, the first MOSFET Q 1 And returning to the initial off state and waiting for the next driving period.
High speed isolated drive first MOSFET Q 1 The pulse width of the generated output signal is equal to the difference t between the arrival time of the discharge pulse drive signal and the arrival time of the charge pulse drive signal 1 -t 0 By adjusting the difference between the arrival time of the first MOSFET and the arrival time of the second MOSFET, the first MOSFET Q can be driven in a high-speed isolation manner 1 The pulse width of the generated output signal is adjustable within the range of nanosecond to second.
In this embodiment, the first MOSFET Q is fully utilized 1 Input capacitance C iss And mutually independent input capacitor charging and discharging loops are arranged in sequence, so that the first MOSFET Q can be driven in an isolated manner by a pulse transformer 1 . The first MOSFET Q can be driven in a high-speed isolation manner by adjusting the difference between the arrival time of the charging pulse driving signal and the arrival time of the discharging pulse driving signal 1 The pulse width of the generated output signal is adjustable within the range of nanosecond to second.
The above description is only for the preferred embodiment of the present application, but the scope of the present application is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present application should be covered within the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.
Claims (8)
1. A circuit for driving a MOSFET with high speed isolation and adjustable pulse width, comprising: the drive signal isolation transmission module, the MOSFET switch-on control switch and the MOSFET switch-off control switch are arranged in the circuit board;
the driving signal isolation transmission module is used for transmitting the pulse driving signal to the secondary end of the transformer in an isolation manner;
the MOSFET conduction control switch is used for controlling the first MOSFET Q 1 The input capacitor charging circuit is formed and turned off;
the MOSFET turn-off control switch is used for controlling the first MOSFET Q 1 The input capacitance discharge circuit is formed and closed.
2. The circuit of claim 1, wherein the PWM-adjustable high-speed isolation driver MOSFET comprises a first MOSFET and a second MOSFET,
the drive signal isolation transmission module comprises a first transformer T 1 A first diode D 1 A second transformer T 2 A second diode D 2 ；
A charging pulse driving signal from the first transformer T 1 The primary side of the first transformer T 1 And the second dotted terminal of (2) and the first diode D 1 The first transformer T 1 And the second different name terminal of the first diode D 1 The anode of (2) is connected; the discharge pulse driving signal is supplied from the second transformer T 2 The primary side of the second transformer T, the second transformer T 2 And the second dotted terminal of (D) and the second diode 2 The cathode of the second transformer T 2 And the second different name terminal of the second diode D 2 The anode of (2) is connected;
the MOSFET conduction control switch comprises a third diode D 3 ；
The third diode D 3 And the first transformer T 1 Is connected to the second dotted terminal of the third diode D 3 Cathode of and first MOSFET Q 1 The gate of (1) is connected;
the MOSFET turn-off control switch comprises a second MOSFET Q 2 ；
The second MOSFET Q 2 And the second transformer T 2 Is connected to the secondary dotted terminal of the second MOSFET Q 2 And the second transformer T 2 Said second MOSFET Q 2 And said first MOSFET Q 1 The first MOSFET Q 1 Is connected to the positive supply + HV, the first MOSFET Q 1 Is connected to a negative supply-HV.
3. The circuit of claim 2, wherein the voltage difference between the positive power supply + HV and the negative power supply-HV is the first MOSFET Q 1 The drain-source withstand voltage is any value within the range.
4. The circuit of claim 2, wherein the output signal generated by the high speed isolation drive MOSFET is derived from the first MOSFET Q 1 Is taken at the drain of (1).
5. The circuit of claim 4, wherein the pulse width of the output signal generated by the high speed isolation drive MOSFET is the same as the difference between the arrival times of the charging pulse drive signal and the discharging pulse drive signal.
6. The circuit of claim 2, wherein the first diode D is connected to the high speed isolated drive MOSFET 1 The second diodePipe D 2 Are all Zener diodes, the third diode D 3 Is a schottky diode.
7. The circuit of claim 6, wherein the first diode D is configured to be turned on when a negative pulse occurs on the secondary side of the pulse transformer 1 The second diode D 2 Form a follow current loop with the secondary coil of the transformer in the loop respectively to prevent the third diode D 3 Voltage across and the second MOSFET Q 2 The voltage between the grid and the source exceeds the reverse maximum voltage withstanding value of the third diode D 3 And the second MOSFET Q 2 Providing protection.
8. A method for high-speed isolation driving of a MOSFET with adjustable pulse width comprises the following steps:
when the charging pulse driving signal arrives, the current is isolated by the first transformer T of the transmission module through the driving signal 1 And a first diode D 1 Isolated transmission to the third diode D of the MOSFET conduction control switch 3 Controlling the first transformer T 1 Secondary coil, third diode D 3 And a first MOSFET Q 1 Input capacitance C iss Forming a charging loop to make the first MOSFET Q 1 The conduction is rapid;
when the discharge pulse driving signal arrives, the current is isolated by the driving signal and transmitted by the second transformer T of the module 2 And a second diode D 2 Isolated transmission to MOSFET turn-off control switch second MOSFET Q 2 Controlling the first MOSFET Q 1 Input capacitance C iss A second MOSFET Q 2 And a negative power supply-HV forms a discharge circuit for the first MOSFET Q 1 And quickly cut off.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211425248.3A CN115694459A (en) | 2022-11-14 | 2022-11-14 | Circuit and method for high-speed isolation driving MOSFET with adjustable pulse width |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211425248.3A CN115694459A (en) | 2022-11-14 | 2022-11-14 | Circuit and method for high-speed isolation driving MOSFET with adjustable pulse width |
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| CN115694459A true CN115694459A (en) | 2023-02-03 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202211425248.3A Pending CN115694459A (en) | 2022-11-14 | 2022-11-14 | Circuit and method for high-speed isolation driving MOSFET with adjustable pulse width |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117040295A (en) * | 2023-08-18 | 2023-11-10 | 北京前景无忧电子科技股份有限公司 | Circuit capable of adjusting characteristic current based on MOSFET switching voltage and working method |
-
2022
- 2022-11-14 CN CN202211425248.3A patent/CN115694459A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117040295A (en) * | 2023-08-18 | 2023-11-10 | 北京前景无忧电子科技股份有限公司 | Circuit capable of adjusting characteristic current based on MOSFET switching voltage and working method |
| CN117040295B (en) * | 2023-08-18 | 2024-04-19 | 北京前景无忧电子科技股份有限公司 | Circuit capable of adjusting characteristic current based on MOSFET switching voltage and working method |
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