CN203180876U - All-solid-state high-voltage rigid-tube switch - Google Patents
All-solid-state high-voltage rigid-tube switch Download PDFInfo
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- CN203180876U CN203180876U CN 201320190376 CN201320190376U CN203180876U CN 203180876 U CN203180876 U CN 203180876U CN 201320190376 CN201320190376 CN 201320190376 CN 201320190376 U CN201320190376 U CN 201320190376U CN 203180876 U CN203180876 U CN 203180876U
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Abstract
The utility model discloses an all-solid-state high-voltage rigid-tube switch including a driving circuit, a switching circuit connected with the driving circuit, a pulse transformer connected between the driving circuit and the switching circuit. The switching circuit includes multiple groups of parallel transistor switches connected with each other in series. The parallel transistor switches are connected with transient voltage suppressors and dynamic voltage-sharing capacitors respectively in parallel. According to the utility model, the transient voltage suppressors are adopted for static voltage-sharing. No leakage current exists and a certain dynamic voltage-sharing effect can be realized. Negative feedback resistors are connected to source electrodes or transmitting electrodes of the parallel transistor switches respectively in series. When a load strikes an arc or is over-current, the driving of transistors can be switched off automatically, so that the whole all-solid-state high-voltage rigid-tube switch is turned off and an aim of protecting the load and the all-solid-state high-voltage rigid-tube switch is realized.
Description
Technical field
The utility model relates to the transistor switch field, specifically is that a kind of all solid state high voltage has just been managed switch.
Background technology
All the time, for the local switch that uses such as radar transmitter, plasma discharge, mostly be various trigger tubes, as vacuum tube, thyratron etc.With this switch of making, the circuit complexity is arranged, shortcomings such as volume is big, the life-span is short, service condition harshness.And in recent years, along with the development of power semiconductor, especially MOSFET and IGBT connection in series-parallel technology is progressively ripe, has solved original switching circuit complexity, shortcomings such as volume is big, the life-span is short, service condition harshness.Transistor series has before this just been managed switch; the optical fiber type of drive that adopt more; shortcomings such as volume is relatively large, consistency is poor, poor reliability; and static voltage sharing all; cause switch leakage current big, load is had a negative impact, and when overcurrent and sparking; switch can't be realized autoprotection, does not reach the purpose of protection load and switch self.
The utility model content
The technical problems to be solved in the utility model provides a kind of all solid state high voltage and has just managed switch, and the volume that has solved original transistor switch is big, consistency is poor, poor reliability, leakage current is big and the problem that can't protect fast.
The technical solution of the utility model is:
All solid state high voltage has just been managed switch, include drive circuit and the switching circuit that is connected with drive circuit, be connected with pulse transformer between described drive circuit and the switching circuit, the elementary and drive circuit of pulse transformer is connected, and the input of the secondary and switching circuit of pulse transformer is connected;
Switching circuit includes the M group parallel transistor switch of series connection mutually, every group of parallel transistor switch includes N parallel connected transistors, Transient Suppression Diode and dynamic voltage balancing electric capacity, be to be connected with the secondary of pulse transformer after N transistorized gate pole or base stage interconnect, N transistor drain or collector electrode interconnect, the individual transistorized source electrode of N or emitter interconnect, and the individual transistorized source electrode of the N after the parallel connection and drain electrode, or be parallel with described Transient Suppression Diode and dynamic voltage balancing electric capacity on the emitter and collector; M group is the parallel transistor switch of series connection mutually, i.e. two groups of adjacent parallel transistor switches, and the source electrode of one group of parallel transistor switch or emitter are connected with another drain electrode or collector electrode of organizing the parallel transistor switch; Wherein, above-mentioned M and N are the integer more than or equal to 1.
Described two groups of adjacent parallel transistor switches, the source electrode of one group of parallel transistor switch or emitter are connected by drain electrode or the collector electrode of a negative feedback resistor with another group parallel transistor switch.
Described transistor is selected metal-oxide half field effect transistor (MOS transistor) or insulated gate bipolar transistor (IGBT) for use.
Described every group of parallel transistor switch also includes a secondary drive circuit, and the input of secondary drive circuit is connected with the secondary of described pulse transformer, and the output of secondary drive circuit is connected with N the transistorized gate pole in back in parallel or base stage.
In the parallel transistor switch that M group of the present utility model is connected mutually, the drain electrode of its end or collector electrode are as electrode input end of the present utility model, and the source electrode of its end or emitter are connected the back as cathode output end of the present utility model with a negative feedback resistor.
Advantage of the present utility model:
The utility model adopts a large amount of transistors by series connection and in parallel, and by compact, reasonably layout is formed, and self comprises the assembly of a small size of drive circuit, realizes the switch control to switching tube.For driven unit ,+15V powers to it, and TTL/CMOS signal input adopts the pulse transformer mode to deliver to switching tube by handling, the driving switch pipe, the conducting of control switch pipe with end, and isolated high pressure.The TTL/CMOS signal of the driving signal source input of switching tube, therefore the switching tube conducting is by being consistent substantially with input signal, the frequency of voltage pulse output and pulsewidth and input TTL signal be consistent equally substantially (the control transmission delay that nanosecond order is arranged), the work pulsewidth that realizes switch thus from 150nS to continuously, and namely can be operated under the fixing pulsewidth, also can be operated under the variable pulsewidth.When the TTL/CMOS signal was 0V, switch quit work; When signal be+during 5V/+15V, the switch continuous operation.
(2), the utility model adopts the pulse transformer type of drive, elementary single high-voltage line passes in the middle of the magnet ring, a plurality of magnet rings series connection of secondary employing, promote many switching tubes, elementary driving signal is coupled to secondary by magnet ring, the conducting of control switch pipe with end, during the switching tube conducting, high pressure forms the loop by switch and load, finish load discharge, when switch ended, switch separated discharge loop, high pressure is not to load discharge, by the conducting of switch and by the pulsed discharge that realizes load; This type of drive is simple and reliable, and has isolated the primary and secondary high pressure, makes drive part can be placed on low-pressure section, has simplified circuit greatly.
(3), the utility model equalizer circuit adopts Transient Suppression Diode (TVS pipe) static state voltage equipoise and electric capacity dynamic voltage balancing two parts, static state voltage equipoise in the past adopts static voltage sharing, can bring big leakage current, when switch is not worked, load is produced certain influence, the TVS pipe is during as static state voltage equipoise, do not exist leakage current, and can play certain dynamic voltage balancing effect.
(4), in the circuit structure of the present utility model, the source electrode of every group transistor or the emitter negative feedback resistor of having connected, and in transistorized driving is included in negative feedback resistor, switch and load being shielded.When load sparking or overcurrent; flowing through transistorized electric current increases; the voltage at negative feedback resistor two ends also increases; and owing to driving force is fixed; then between transistorized gate pole and the source electrode or the voltage between base stage and the emitter will reduce; turn-off until transistor, whole switch is turn-offed, reach protection load and switching purposes.
The modulation switch, research institutions' laboratory switching device, sewage disposal pulse power switch, beverage that the utility model can be used as transmitting tube in the radar transmitter handled the high-voltage switch gear in pulse power switch and the medicine equipment etc.
Description of drawings
Fig. 1 is structured flowchart of the present utility model.
Fig. 2 is circuit connection diagram of the present utility model.
Fig. 3 is the application johning knot composition of 20kV travelling wave tube anode modulation switch.
When Fig. 4 was the work of 20kV travelling wave tube anode modulation switch, it opened the time dependent oscillogram of switch output TTL/CMOS level signal.
When Fig. 5 is the work of 20kV travelling wave tube anode modulation switch, the time dependent oscillogram of its stopcock output TTL/CMOS level signal.
When Fig. 6 is the work of 20kV travelling wave tube anode modulation switch, the time dependent oscillogram of its voltage pulse output.
Embodiment
See Fig. 1, all solid state high voltage has just been managed switch, include drive circuit 1 and the switching circuit 2 that is connected with drive circuit 1, be connected with pulse transformer 3 between drive circuit 1 and the switching circuit 2, elementary and the drive circuit 1 of pulse transformer 3 is connected, and the input of secondary drive circuit is connected in the secondary and switching circuit 2 of pulse transformer 3;
See Fig. 2, switching circuit 2 includes four groups of parallel transistor switches, every group of parallel transistor switch includes a secondary drive circuit 21, N parallel connected transistors T1-TN(metal-oxide half field effect transistor or insulated gate bipolar transistor) and Transient Suppression Diode TVS1, TVS2, TVS3, TVS4 and dynamic voltage balancing capacitor C 1, C2, C3, C4, be that the gate pole of N transistor T 1-TN or base stage interconnect the back and be connected with the output of secondary drive circuit 21, drain electrode or the collector electrode of N transistor T 1-TN interconnect, and source electrode or the emitter of N transistor T 1-TN interconnect, and source electrode and the drain electrode of the N after the parallel connection transistor T 1-TN, or be parallel with transient state on the emitter and collector and suppress two utmost point TVS1, TVS2, TVS3, TVS4 and dynamic voltage balancing capacitor C 1, C2, C3, C4; Four groups of parallel transistor switches of connecting mutually, i.e. two groups of adjacent parallel transistor switches, the source electrode of one group of parallel transistor switch or emitter are by a negative feedback resistor R1, R2, and R3, R4 is connected with another drain electrode or collector electrode of organizing the parallel transistor switch; Wherein, above-mentioned N is the integer more than or equal to 1.
In four groups of parallel transistor switches of connecting mutually of the present utility model, the drain electrode of its end or collector electrode are as electrode input end of the present utility model, and the source electrode of its end or emitter are connected the back as cathode output end of the present utility model with a negative feedback resistor R4.
For switching circuit 2, pulse transformer 3 type of drive are adopted in the driving of metal-oxide-semiconductor, and line bag of secondary each magnet ring promotes four parallel transistor group switches, and by the series connection of parallel transistor group being realized the series connection of many group parallel transistor group switches.Elementary driving signal is coupled to secondary by magnet ring, the conducting of control switch pipe and shutoff.During the switching tube conducting, high pressure forms the loop by switch and load, finishes load discharge, and when switch turn-offed, switch separated discharge loop, and high pressure is not to load discharge, by conducting and the pulsed discharge of shutoff realization to load of switch.
Because transistorized driving signal is the TTL/CMOS signal that derives from input, therefore switching tube conducting shutoff and input signal are consistent substantially, the frequency of voltage pulse output and pulsewidth and input TTL/CMOS signal be consistent equally substantially (the control transmission delay that nanosecond order is arranged), the work pulsewidth that realizes switch thus from 200ns to continuously, and namely can be operated under the fixing pulsewidth, also can be operated under the variable pulsewidth
Because consistency is turn-offed in the characteristics of transistor high-speed switch and good conducting, make the front and back of output voltage along reaching hundred nanosecond orders.
See Fig. 3,20kV travelling wave tube anode modulation switch, this switch is for opening switch 4 and stopcock 5 biswitch patterns, be suspended on cathode voltage-20kV, repetition rate is 2kHz, duty ratio from 1% to 80% is adjustable, opens switch and stopcock and all adopts 24 MOS transistor series connection (N=1, M=24).Because elementary employing high-voltage line is isolated, therefore controlling drive circuit needn't be suspended on the high pressure, and is placed on the electronegative potential.
Among Fig. 3, resistance R 1, R2 are noninductive resistance, play metering function, and R3 and R4 are pull down resistor, play the effect of the anode output potential being moved to cathode potential when opening switch and stopcock and do not work.
At t0 constantly, the TTL/CMOS signal of opening switch 4 transfers the high level (see figure 4) to by low level, drive the metal-oxide-semiconductor of opening switch 4, make and open switch 4 conductings, + 20kV high voltage source is generally tens pico farads to the hundreds of pico farad by opening switch 4 and resistance R 1 to load C L(travelling wave tube anode capacitance) charging, this moment, the TTL/CMOS signal of stopcock 5 was the low level (see figure 5), and stopcock 5 is in cut-off state, and charging was finished in 100 nanoseconds; Open switch 4 and will be held open state always, the voltage on the proof load CL is the high-voltage power voltage (see figure 6) always, and the TTL/CMOS signal of opening switch 4 inputs until t1 constantly becomes low level, opens switch 4 and ends;
T1 constantly, the TTL/CMOS signal of opening switch 4 is low (see figure 4) by hypermutation, and the TTL/CMOS signal of stopcock 5 becomes high (see figure 5) by hanging down, opening switch 4 turn-offs, stopcock 5 conductings, load C L is by R2 and stopcock 5 discharges, discharge is finished in hundred nanoseconds equally, the voltage at load C L two ends will arrive zero volt (see figure 6), t1-t2 is in the time, stopcock 5 is in opening always, and the voltage on the proof load CL is zero volt always, enters next cycle constantly from t2;
By opening the alternate conduction of switch 4 and stopcock 5, form the pulsed discharge to load C L; Because the use of biswitch has guaranteed splendid rise and fall edge.
Claims (4)
1. all solid state high voltage has just been managed switch, include drive circuit and the switching circuit that is connected with drive circuit, it is characterized in that: be connected with pulse transformer between described drive circuit and the switching circuit, elementary and the drive circuit of pulse transformer is connected, and the input of the secondary and switching circuit of pulse transformer is connected;
Switching circuit includes the M group parallel transistor switch of series connection mutually, every group of parallel transistor switch includes N parallel connected transistors, Transient Suppression Diode and dynamic voltage balancing electric capacity, be to be connected with the secondary of pulse transformer after N transistorized gate pole or base stage interconnect, N transistor drain or collector electrode interconnect, the individual transistorized source electrode of N or emitter interconnect, and the individual transistorized source electrode of the N after the parallel connection and drain electrode, or be parallel with described Transient Suppression Diode and dynamic voltage balancing electric capacity on the emitter and collector; M group is the parallel transistor switch of series connection mutually, i.e. two groups of adjacent parallel transistor switches, and the source electrode of one group of parallel transistor switch or emitter are connected with another drain electrode or collector electrode of organizing the parallel transistor switch; Wherein, above-mentioned M and N are the integer more than or equal to 1.
2. all solid state high voltage according to claim 1 has just been managed switch, it is characterized in that: described two groups of adjacent parallel transistor switches, the source electrode of one group of parallel transistor switch or emitter are connected by drain electrode or the collector electrode of a negative feedback resistor with another group parallel transistor switch.
3. all solid state high voltage according to claim 1 has just been managed switch, it is characterized in that: described transistor is selected metal-oxide half field effect transistor or insulated gate bipolar transistor for use.
4. all solid state high voltage according to claim 1 has just been managed switch, it is characterized in that: described every group of parallel transistor switch also includes a secondary drive circuit, the input of secondary drive circuit is connected with the secondary of described pulse transformer, and the output of secondary drive circuit is connected with N the transistorized gate pole in back in parallel or base stage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320190376 CN203180876U (en) | 2013-04-16 | 2013-04-16 | All-solid-state high-voltage rigid-tube switch |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320190376 CN203180876U (en) | 2013-04-16 | 2013-04-16 | All-solid-state high-voltage rigid-tube switch |
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| CN203180876U true CN203180876U (en) | 2013-09-04 |
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| CN 201320190376 Expired - Lifetime CN203180876U (en) | 2013-04-16 | 2013-04-16 | All-solid-state high-voltage rigid-tube switch |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104682935A (en) * | 2014-12-26 | 2015-06-03 | 中国电子科技集团公司第三十八研究所 | Rigid solid state modulation switch module and combinational circuit thereof |
| CN107017799A (en) * | 2017-04-24 | 2017-08-04 | 上海激光电源设备有限责任公司 | Pockers cell nanosecond pulse power supply based on solid-state switch |
-
2013
- 2013-04-16 CN CN 201320190376 patent/CN203180876U/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104682935A (en) * | 2014-12-26 | 2015-06-03 | 中国电子科技集团公司第三十八研究所 | Rigid solid state modulation switch module and combinational circuit thereof |
| CN104682935B (en) * | 2014-12-26 | 2017-12-29 | 中国电子科技集团公司第三十八研究所 | A kind of rigid solid state modulation switch module and combinations thereof circuit |
| CN107017799A (en) * | 2017-04-24 | 2017-08-04 | 上海激光电源设备有限责任公司 | Pockers cell nanosecond pulse power supply based on solid-state switch |
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| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20130904 |
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| CX01 | Expiry of patent term |