CN109478524A - 基板支撑装置 - Google Patents
基板支撑装置 Download PDFInfo
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- CN109478524A CN109478524A CN201680086618.1A CN201680086618A CN109478524A CN 109478524 A CN109478524 A CN 109478524A CN 201680086618 A CN201680086618 A CN 201680086618A CN 109478524 A CN109478524 A CN 109478524A
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Abstract
本发明揭示了一种用于清洗基板(107)背面的基板支撑装置(300)。该基板支撑装置(300)包括中空轴(319)和旋转轴(303)。旋转轴(303)设置在中空轴(319)内,旋转轴(303)的外壁与中空轴(319)的内壁之间具有一间距,旋转轴(303)的外壁设有挡墙(322)和凹槽(324)以阻止间距内的微粒进入形成在中空轴(319)上并供应气体到基板(107)的正面的气体槽(325),避免微粒污染基板(107)的正面,从而提高了半导体器件的质量。
Description
技术领域
本发明涉及基板加工装置,更具体地,涉及一种基板支撑装置,该基板支撑装置利用伯努利原理支撑基板以对基板进行,例如,清洗、刻蚀、显影、涂胶等工艺加工。
背景技术
在半导体器件制造过程中,多数工艺,例如清洗、刻蚀、显影、涂胶等主要是对基板元器件面也被称为基板正面进行加工。然而,基板背面(非元器件面)的工艺加工,例如,清洗、刻蚀等同样很重要。粘附在基板背面的污染物可能导致光刻步骤中基板正面的图案散焦,或者基板上的污染物转移至基板加工装置上,当使用该基板加工装置加工其他基板时,其他基板就会被这些污染物污染。在这些污染物中,基板背面的金属污染物能够扩散至基板正面,从而导致半导体器件失效。
为了保证半导体器件的品质,对基板背面进行清洗是至关重要的。清洗基板背面时,需要用到装置支撑基板。美国专利号5,492,566公开了这样一种装置,该装置包括设置在该装置表面内的喷口,该喷口向该装置的表面喷射压缩气体以在该装置与基板之间形成气垫。该装置利用伯努利原理将基板固定在该装置的表面上方并使基板保持悬浮状态。至少一个凸起设置在该装置的表面内,该凸起作为支架支撑基板。使用该装置加工基板时,基板的底表面朝向该装置的表面并与凸起接触。因此,当使用该装置对基板背面进行加工时,基板元器件面(基板正面)不得不朝向该装置的表面并与凸起接触,从而导致基板上的元器件可能遭受损坏。此外,该装置的结构设计使得基板与该装置之间的间距不易调节。
美国专利号6,669,808揭示了另一种基板加工装置,该基板加工装置包括旋转基座及吸盘。旋转基座上设置有数个卡固基板的支架。吸盘设置在旋转基座的上方,吸盘上设置有喷口,该喷口向下和向外地向旋转基座上的基板的上表面喷射惰性气体。吸盘利用伯努利原理吸住基板并使基板向上移动,使基板的上表面靠近吸盘。设置在旋转基座下方的溶液供应装置向基板的下表面供应溶液。使用该基板加工装置加工基板时,同样存在基板的下表面与旋转基座之间的间距不易调节的问题。除此以外,溶液供应装置设置在旋转基座的下方并向上供应溶液至基板的下表面,采用这种供液方式清洗基板下表面的清洗效果不是很理想。
发明内容
因此,根据本发明的一目的提出的基板支撑装置,包括夹盘、第一流量控制器、第二流量控制器、数个定位销、数个导柱及驱动器。夹盘开设有若干第一气孔和若干第二气孔,若干第一气孔与第一气体通道连接,通过该若干第一气孔向基板喷射气体并利用伯努利原理吸附保持基板,若干第二气孔与第二气体通道连接,通过该若干第二气孔向基板喷射气体并吹浮起基板。第一流量控制器和第二流量控制器分别安装在第一气体通道和第二气体通道内,第一流量控制器和第二流量控制器分别控制供应至第一气孔和第二气孔的气体的流量。数个定位销和数个导柱分别布置在夹盘的顶表面,每个导柱的底部凸伸形成支撑部。驱动器驱动夹盘旋转。
基板的下表面与夹盘的顶表面之间形成间隙,从而避免基板的下表面和夹盘的顶表面接触而污染了基板的下表面,通过控制供应至第一气孔和第二气孔的气体的流量来调节间隙的高度,利用伯努利原理能够使基板保持稳定的悬浮状态。
根据本发明的另一目的提出的基板支撑装置,包括夹盘、数个定位销、中空轴、旋转轴及两对密封圈。夹盘用于支撑基板并设有若干第一气孔和若干第二气孔,若干第一气孔与一气体管道连接,通过该若干第一气孔向基板喷射气体并利用伯努利原理吸附保持基板,若干第二气孔与另一气体管道连接,通过该若干第二气孔向基板喷射气体并吹浮起基板。数个定位销布置在夹盘的顶表面,该数个定位销被分成两组,即第一组定位销和第二组定位销。每个定位销由一独立气缸驱动。驱动第一组定位销的气缸与一气体管道连接。驱动第二组定位销的气缸与另一气体管道连接。中空轴的内壁开设有四个气体槽,每个气体槽对应一个气体管道以向该气体管道供应气体。旋转轴设置在中空轴内,旋转轴的外壁与中空轴的内壁之间具有间距。一对密封圈设置在给驱动第一组定位销的气缸供气的气体槽的两侧。另一对密封圈设置在给驱动第二组定位销的气缸供气的气体槽的两侧。其中,中空轴在两个相邻的气体槽之间设置有排气口。这两个相邻的气体槽中的一个气体槽给驱动第一组定位销或者第二组定位销的气缸供气,这两个相邻的气体槽中的另一个气体槽给第一气孔或者第二气孔供气。旋转轴的外壁设置挡墙和凹槽,挡墙与中空轴的排气口相对应,凹槽与给第一气孔或者第二气孔供气的气体槽相匹配。
本发明的基板支撑装置利用设置在旋转轴外壁上的挡墙和凹槽阻止旋转轴的外壁与中空轴的内壁之间的间距内的微粒进入形成在中空轴上并向基板正面供气的气体槽,从而避免微粒污染基板正面,进而提高了半导体器件的品质。
附图说明
本领域的技术人员通过阅读具体实施例的描述,并参考附图,能够清楚的理解本发明的内容,其中,附图包括:
图1揭示了本发明基板支撑装置的一实施例的剖面结构示意图。
图2揭示了本发明基板支撑装置的一实施例的顶视图。
图3A和图3B分别揭示了图2所示的基板支撑装置的一实施例的剖视图。
图4揭示了本发明基板支撑装置的定位销的一实施例的结构示意图。
图5揭示了终端执行器将基板放置在基板支撑装置上或从基板支撑装置上取走基板的示意图。
图6A至图6E揭示了终端执行器将基板放置在基板支撑装置上的过程示意图。
图7A至图7F揭示了终端执行器从基板支撑装置上取走基板的过程示意图。
图8揭示了根据本发明另一个实施例的基板支撑装置的正视图。
图9揭示了图8所示的基板支撑装置的顶视图。
图10揭示了图8中沿E-E的剖视图。
图11揭示了图10中F部位的放大图。
图12揭示了图9中沿G-G的剖视图。
图13揭示了图12中H部位的放大图。
图14揭示了根据本发明又一个实施例的基板支撑装置的正视图。
图15揭示了图14所示的基板支撑装置的顶视图。
图16揭示了图14中沿A-A的剖视图。
图17揭示了图16中B部位的放大图。
图18揭示了图17中K部位的放大图。
图19揭示了图15中沿C-C的剖视图。
图20揭示了图19中D部位的放大图。
图21揭示了图20中L部位的放大图。
图22A揭示了根据本发明的另一个实施例的挡墙。
图22B揭示了图22A中M部位的放大图。
图23A揭示了根据本发明的又一个实施例的挡墙。
图23B揭示了图23A中N部位的放大图。
图24揭示了使用图8所示的基板支撑装置和使用图14所示的基板支撑装置处理基板的微粒增加对比图。
具体实施方式
参考图1至图4所示,揭示了根据本发明的一实施例的基板支撑装置。该基板支撑装置包括水平布置的夹盘101,夹盘101优选为圆形,用来支撑圆形基板,例如半导体硅片。中空腔体102配置在夹盘101的下方并与夹盘101的底部固定连接。中空轴103配置在中空腔体102的下方,中空轴103的一端与中空腔体102的底部连接,中空轴103的另一端与驱动器104连接。驱动器104驱动中空轴103旋转,从而带动与中空轴103相连接的中空腔体102及与中空腔体102相连接的夹盘101绕一垂直轴旋转。
数个定位销105均匀分布在夹盘101顶表面的外周,其作用在于限制基板107,防止基板107在工艺加工过程中水平移动。在一个实施例中,夹盘101顶表面的外周对称地设置有六个定位销105。每个定位销105的顶端部开设有定位槽1051,基板107的外边缘卡设在定位槽1051内,以达到限制基板107,防止基板107水平移动的目的。各定位销105均与一独立的气缸401连接,气缸401驱使与其相连接的定位销105向夹盘101的中心靠拢以将基板107限定在由各定位销105围成的空间内,或者气缸401驱使与其相连接的定位销105向远离夹盘101的中心方向移动以将基板107从定位销105围成的空间内释放。较佳地,定位销105分成两组105a和105b,定位销105a和定位销105b交替布置。清洗基板107时,定位销105a和定位销105b交替卡固基板107的外边缘,旨在保证基板107的外边缘能够完全被清洗。举例而言,清洗基板107时,可以先由第一组定位销105a卡固基板107的外边缘,第二组定位销105b不与基板107接触,基板107清洗一时间段后,第二组定位销105b卡固基板107的外边缘,第一组定位销105a释放基板107。显然,也可以先由第二组定位销105b卡固基板107,然后,再由第一组定位销105a卡固基板107。
夹盘101顶表面的外周还设置有数个导柱106,每一导柱106对应与一定位销105相邻布置。导柱106大致呈圆锥状,导柱106的侧表面为倾斜的斜面,因此,导柱106的侧表面可以作为引导面引导基板107精确地放置在夹盘101上。导柱106的底部水平向外凸伸形成支撑部1061,当基板107放置在夹盘101上时,支撑部1061支撑基板107,使得基板107的底表面与夹盘101的顶表面之间形成一间隙111,避免基板107的底表面与夹盘101的顶表面接触而导致基板107的底表面被污染。
夹盘101开设有若干贯穿夹盘101的第一气孔109和第二气孔110。若干第一气孔109和若干第二气孔110分别围成一个以夹盘101的中心为圆心的圆。第一气孔109围成的圆的半径大于第二气孔110围成的圆的半径,也就是说,第一气孔109位于第二气孔110的外围并包围第二气孔110。第一气孔109呈倾斜状,第一气孔109与夹盘101的底面之间形成一定角度。第二气孔110垂直于夹盘101。第一气孔109与第一内气管路112的一端连接,第二气孔110与第二内气管路113的一端连接。第一内气管路112和第二内气管路113收容在中空腔体102内。第一内气管路112的另一端和第二内气管路113的另一端分别穿过中空腔体102并收容在中空轴103内。第一过滤器114和第二过滤器115分别安装在第一内气管路112和第二内气管113路内,用于净化供应至第一气孔109和第二气孔110的气体,防止气体中含有污染物造成基板107底表面的污染。第一内气管路112与第一外气管路连接,第一外气管路与气体源连接。第一内气管路112与第一外气管路构成第一气体通道,该第一气体通道与第一气孔109连接,通过第一气体通道向第一气孔109供应气体。第二内气管路113与第二外气管路连接,第二外气管路与气体源连接。第二内气管路113与第二外气管路构成第二气体通道,该第二气体通道与第二气孔110连接,通过第二气体通道向第二气孔110供应气体。第一流量控制器(MFC)116和第二流量控制器117分别安装在第一气体通道和第二气体通道上,用于控制供应至第一气孔109和第二气孔110的气体的流量。较佳地,第一流量控制器116和第二流量控制器117分别安装在第一外气管路和第二外气管路上。第一内气管路112和第一外气管路的连接处以及第二内气管路113和第二外气管路的连接处均采取了密封措施以防止气体泄漏,例如可以采用磁流体对第一内气管路112和第一外气管路的连接处以及第二内气管路113和第二外气管路的连接处进行密封。
参考图5和图6A至图6E所示,揭示了使用该基板支撑装置的基板107背面清洗的过程。使用一终端执行器501传输基板107。该终端执行器501具有基部601,基部601的底表面的外边缘向下延伸形成环状的抵接部602。抵接部602的一部分向下延伸形成止挡部605。抵接部602的底表面安装有接触传感器604,接触传感器604用于检测基板107是否与抵接部602接触。如果接触传感器604检测到基板107与抵接部602接触,推移部603从基板107的一侧推动基板107移动直至基板107抵达止挡部605,基板107被固定在终端执行器501内。可以利用气缸驱动推移部603移动。当终端执行器501释放基板107时,只需向外拉动推移部603。
如图6A所示,终端执行器501夹持基板107至夹盘101的上方,基板107的正面朝向夹盘101的顶表面,此时,第一外气管路和第二外气管路均关闭,不用向第一气孔109和第二气孔110供应气体。然后,终端执行器501向下移动,使基板107靠近导柱106,此时,第二外气管路打开,气体通过第二气体通道供应至第二气孔110,气体从第二气孔110喷射至基板107的正面。为了避免基板107的正面被污染,喷射至基板107正面的气体经由第二过滤器115过滤。第二气孔110喷射的气体吹浮起基板107至预定的高度,然后,推移部603向外移动,释放基板107,如图6B所示。接着,第二外气管路关闭,第二气孔110停止向基板107的正面喷射气体,基板107在其自身重力的作用下沿导柱106的侧表面下落至导柱106的支撑部1061并由支撑部1061支撑,如图6C所示。第二外气管路再次打开,从第二气孔110喷射出的气体吹浮起基板107,第二流量控制器117控制供应至第二气孔110的气体的流量,以调节基板107的正面与夹盘101的顶表面之间的间隙111的大小,如图6D所示。终端执行器501从夹盘101的上方移走,至少一个喷嘴108移至基板107背面的上方。在喷嘴108向基板107背面喷洒清洗液之前,第一外气管路打开,利用伯努利原理,通过第一气孔109向基板107的正面吹气,基板107由于伯努利效应保持稳定的漂浮状态。第一组定位销105a卡固基板107,驱动器104驱动夹盘101旋转,同时带动基板107旋转,喷嘴108向基板107背面喷洒清洗液,清洗基板107的背面。在夹盘101旋转以及第一气孔109斜向外地向基板107的正面吹气的双重作用下,向基板107背面喷洒的清洗液不会到达基板107的正面。清洗一时间段后,第二组定位销105b卡固基板107,第一组定位销105a与基板107分离。采用第一组定位销105a和第二组定位销105b交替卡固基板107,能够保证基板107的外边缘全部被清洗到。
参考图7A至图7F所示,揭示了终端执行器501从基板支撑装置上取走基板107的过程。基板107背面清洗完成后,喷嘴108从基板107背面的上方移走,定位销105与基板107分离,释放基板107,如图7A所示。终端执行器501移至基板107背面的上方,第一外气管路关闭,第一气孔109停止向基板107的正面喷射气体,第二气孔110仍保持向基板107的正面喷射气体以吹浮起基板107,如图7B所示。终端执行器501向下移动靠近基板107的背面,使用第二流量控制器117增大通过第二气孔110供应至基板107的气体流量,使基板107上升以抵靠在终端执行器501的抵接部602的底表面,如图7C所示。终端执行器501向上移动,从第二气孔110喷射出的气体使基板107随着终端执行器501上升并一直抵靠在终端执行器501的抵接部602的底表面,如图7D所示。接触传感器604检测到基板107与抵接部602接触,推移部603从基板107的一侧推动基板107移动直至基板107抵达止挡部605,基板107被固定在终端执行器501内,如图7E所示。最终,第二外气管路关闭,第二气孔110停止向基板107的正面喷射气体,终端执行器501将基板107从基板支撑装置上取走,如图7F所示。
由上述可知,本发明的基板支撑装置通过向第一气孔109供应气体并利用伯努利原理能够使基板107保持稳定的悬浮状态,而且,通过控制供应至第二气孔110的气体的流量,能够根据工艺要求调节基板107的正面与夹盘101的顶表面之间的间隙111的高度。此外,仅在喷嘴108向基板107背面喷洒清洗液之前,第一外气管路才打开,从而降低了基板107背面清洗成本。本领域的技术人员可以理解的是,本发明所揭示的基板支撑装置不局限于应用在基板背面清洗工艺,还可以应用于例如刻蚀工艺,本发明仅以基板背面清洗工艺为例对本发明的基板支撑装置进行详细说明。
参考图8至图13所示,揭示了根据本发明另一个实施例的基板支撑装置。该基板支撑装置200包括夹盘201。夹盘201开设有若干第一气孔209和若干第二气孔210。数个定位销205均匀分布在夹盘201顶表面的外周,防止基板在工艺加工过程中,例如清洗过程中,水平移动。该数个定位销205被分成两组。第一组定位销205a和第二组定位销205b交替排布。每个定位销由一独立气缸驱动。基板支撑装置200还包括旋转轴203和中空轴219。旋转轴203设置在中空轴219内,当基板支撑装置200支撑一基板以清洗基板背面时,一驱动装置驱动旋转轴203旋转,从而带动基板在清洗过程中旋转。中空轴219的内壁开设有第一气体槽221、第二气体槽223、第三气体槽225及第四气体槽227。第一气体槽221、第二气体槽223、第三气体槽225及第四气体槽227均为环形。中空轴219还设有与第一气体槽221连通的第一进气口231、与第二气体槽223连通的第二进气口233、与第三气体槽225连通的第三进气口235及与第四气体槽227连通的第四进气口237。第一气体管道241连接第一气体槽221和驱动第一组定位销205a的气缸。第二气体管道243连接第二气体槽223和驱动第二组定位销205b的气缸。第三气体管道245连接第三气体槽225和若干第一气孔209。第四气体管道247连接第四气体槽227和若干第二气孔210。当旋转轴203被驱动旋转时,第一气体管道241、第二气体管道243、第三气体管道245及第四气体管道247分别随旋转轴203旋转。在基板清洗过程中,旋转轴203旋转,而中空轴219不旋转。
夹盘201顶表面的外周还设置有数个导柱206,其目的在于引导基板被恰好放置在夹盘201上。导柱206的底部水平向外凸伸形成支撑部,当基板放置在夹盘201上时,支撑部支撑基板,使得基板的底表面与夹盘201的顶表面之间形成一间隙,避免基板的底表面与夹盘201的顶表面接触而导致基板的底表面被污染。
当使用该基板支撑装置200支撑基板时,为了清洗基板背面,需要将基板正面面向夹盘201的顶表面。净化气体通过第四进气口237、第四气体槽227及第四气体管道247供应至若干第二气孔210。从该若干第二气孔210喷出的净化气体喷射到基板的正面以将基板吹浮起至预定的高度,因此,基板的正面不会接触到基板支撑装置200的顶表面,从而避免污染基板的正面。净化气体通过第三进气口235、第三气体槽225及第三气体管道245供应至若干第一气孔209,从该若干第一气孔209喷出的净化气体喷射到基板的正面,由于伯努利效应而吸附基板。因此,基板保持稳定的漂浮状态以进行背面清洗。净化气体通过第一进气口231、第一气体槽221及第一气体管道241供应至驱动第一组定位销205a的气缸,因此,气缸驱动第一组定位销205a向内运动以固定基板或向外运动以释放基板。净化气体通过第二进气口233、第二气体槽223及第二气体管道243供应至驱动第二组定位销205b的气缸,因此,气缸驱动第二组定位销205b向内运动以固定基板或向外运动以释放基板。在基板清洗过程中,第一组定位销205a和第二组定位销205b交替固定基板使得基板的外边缘能够被完全洗净。
为了避免旋转轴203和中空轴219之间的摩擦产生微粒,旋转轴203和中空轴219不接触,旋转轴203和中空轴219之间形成有微小间距。为了确保供应至气缸的气体的压力足够大,能够使得气缸驱动第一组定位销205a和第二组定位销205b,第一对密封圈251和第二对密封圈253分别设置在第一气体槽221的两侧和第二气体槽223的两侧以防第一气体槽221和第二气体槽223内的气体从旋转轴203和中空轴219之间的间距泄露。然而,当旋转轴203旋转时,由于旋转轴203和第一对密封圈251以及第二对密封圈253之间的摩擦产生微粒,这些微粒,尤其是旋转轴203和最接近第三气体槽225的密封圈253之间的摩擦产生的微粒可能会通过旋转轴203和中空轴219之间的间距进入第三气体槽225,并进一步通过第三气体管道245到达基板的正面。尽管中空轴219设置有排气口255将旋转轴203和中空轴219之间间距内的气体排出并释放气体压力,部分微粒随气体排出,但是,气体的动能使得旋转轴203和中空轴219之间间距内的微粒向上运动,因此,在基板背面清洗过程中,仍有一些微粒进入第三气体槽225,并进一步通过第三气体管道245到达基板的正面。微粒在旋转轴203和中空轴219之间间距内的运动路径如图11和图13中的箭头所示。因此,需要找到解决该问题的办法以提高半导体器件的质量。
参考图14至图21所示,揭示了根据本发明另一个实施例的基板支撑装置。该基板支撑装置300包括夹盘301、旋转轴303和中空轴319。夹盘301用于支撑基板。旋转轴303设置在中空轴319内,旋转轴303与夹盘301相连接,当旋转轴303受驱动装置驱动在中空轴319内转动时,旋转轴303带动夹盘301转动。当基板支撑装置300支撑基板进行基板背面清洗时,旋转轴303在中空轴319内转动,但中空轴319不转动。
参考图15所示,夹盘301开设有若干第一气孔309和若干第二气孔310。夹盘301顶表面的外周设有数个定位销305和数个导柱306。该数个定位销305被分成两组,第一组定位销305a和第二组定位销305b交替分布以防基板水平移动。每个定位销305由独立气缸驱动向内移动卡固基板或向外移动释放基板。清洗基板时,这两组定位销305a和定位销305b交替地卡固基板,旨在保证基板的外周边缘能够完全被清洗干净。每个导柱306被设置在每相邻的两个定位销之间。每个导柱306具有一个用于引导基板准确地放置在夹盘301上的引导面和一个用于支撑基板的支撑部。当基板放置在夹盘301上时,导柱306的支撑部支撑基板,因此,基板的底表面和夹盘301的顶表面之间会形成一个间隙,从而避免基板的底表面接触夹盘301的顶表面而造成基板的底表面被污染。如果该基板支撑装置300用于清洗基板背面时,基板的底表面即为基板的正面。
中空轴319的内壁开设有四个气体槽,即第一气体槽321、第二气体槽323、第三气体槽325和第四气体槽327,该四个气体槽均为环形。中空轴319还设有与第一气体槽321连通的第一进气口331、与第二气体槽323连通的第二进气口333、与第三气体槽325连通的第三进气口335及与第四气体槽327连通的第四进气口337。第一气体管道341连接第一气体槽321以向驱动第一组定位销305a的气缸供气。第二气体管道343连接第二气体槽323以向驱动第二组定位销305b的气缸供气。第三气体管道345连接第三气体槽325以向若干第一气孔309供气。第四气体管道347连接第四气体槽327以向若干第二气孔310供气。当旋转轴303旋转时,第一气体管道341、第二气体管道343、第三气体管道345及第四气体管道347分别随旋转轴303旋转。
当使用该基板支撑装置300支撑基板时,为了清洗基板背面,需要将基板正面面向夹盘301的顶表面。净化气体通过第四进气口337、第四气体槽327及第四气体管道347供应至若干第二气孔310。从该若干第二气孔310喷出的净化气体喷射到基板的正面以将基板吹浮起至预定的高度,因此,基板的正面不会接触到夹盘301的顶表面,从而避免污染基板的正面。净化气体通过第三进气口335、第三气体槽325及第三气体管道345供应至若干第一气孔309,从该若干第一气孔309喷出的净化气体喷射到基板的正面,由于伯努利效应而吸附基板。因此,基板保持稳定的漂浮状态以进行背面清洗。净化气体通过第一进气口331、第一气体槽321及第一气体管道341供应至驱动第一组定位销305a的气缸,因此,气缸驱动第一组定位销305a向内运动以固定基板或向外运动以释放基板。净化气体通过第二进气口333、第二气体槽323及第二气体管道343供应至驱动第二组定位销305b的气缸,因此,气缸驱动第二组定位销305b向内运动以固定基板或向外运动以释放基板。在基板背面清洗过程中,第一组定位销305a和第二组定位销305b交替固定基板使得基板的外边缘能够被完全洗净。
旋转轴303的外壁和中空轴319的内壁之间形成有微小间距以避免旋转轴303和中空轴319之间的摩擦产生微粒。为了确保供应至气缸的气体的压力足够大,能够使得气缸驱动第一组定位销305a和第二组定位销305b,第一对密封圈351和第二对密封圈353分别设置在第一气体槽321的两侧和第二气体槽323的两侧以防第一气体槽321和第二气体槽323内的气体从旋转轴303和中空轴319之间的间距泄露。中空轴319设有一个排气口355,该排气口355靠近最接近第三气体槽325的密封圈353。
为了防止旋转轴303和密封圈351、353之间的摩擦产生的微粒进入第三气体槽325进而通过第三气体管道345到达基板的正面,旋转轴303的外壁设有一个与排气口355相对的挡墙322,旋转轴303的外壁还设有一个与第三气体槽325匹配的环形凹槽324。第三气体管道345与凹槽324连通以向第一气孔309供应净化气体。在基板背面清洗过程中,旋转轴303和最接近第三气体槽325的密封圈353之间摩擦产生的微粒随着旋转轴303和中空轴319之间的间距内的气体向上移动,直至被挡墙322阻挡。在一种具体实施方式中,挡墙322成直角。当微粒被挡墙322阻挡后,微粒朝向排气口355移动,微粒的移动路径如图18和图21中箭头所示。与此同时,旋转轴303和中空轴319之间的间距内的气体从排气口355抽走,因此,微粒随气体一起被抽走。此外,具有一定压力的净化气体供应至凹槽324,该气体压力阻止旋转轴303和中空轴319之间的间距内的气体进入第三气体槽325,结合从排气口355抽气,有效阻止微粒到达第三气体槽325污染基板正面。由于密封圈351、353良好的密封效果,通常,由旋转轴303和密封圈351、353摩擦产生的微粒不会到达第三气体槽325。
参考图22A和图22B,在本发明的另一实施例中,挡墙422成多边形,微粒的移动路径如图22B中箭头所示。
参考图23A和图23B,在本发明的又一实施例中,挡墙522成弧形,微粒的移动路径如图23B中箭头所示。
图24揭示了分别使用图8所示的基板支撑装置和使用图14所示的基板支撑装置处理基板的微粒增加对比图。图24中,“老夹盘”是指图8所示的基板支撑装置,“新夹盘”是指图14所示的基板支撑装置。从图24可以看出,在清洗基板背面时,采用图14所示的基板支撑装置支撑基板,微粒增加的数量明显减少。
本发明采用挡墙322或422或522和设置在旋转轴303上的凹槽324,阻止微粒进入到第三气体槽325,结合从排气口355抽气,避免微粒到达第三气体槽325并污染基板正面,提高了半导体器件的质量。
综上所述,本发明通过上述实施方式及相关图式说明,己具体、详实的揭露了相关技术,使本领域的技术人员可以据以实施。而以上所述实施例只是用来说明本发明,而不是用来限制本发明的,本发明的权利范围,应由本发明的权利要求来界定。至于本文中所述元件数目的改变或等效元件的代替等仍都应属于本发明的权利范围。
Claims (10)
1.一种基板支撑装置,其特征在于,包括:
夹盘,开设有若干第一气孔和若干第二气孔,若干第一气孔与一气体管道连接以向基板喷射气体并利用伯努利原理吸附保持基板,若干第二气孔与另一气体管道连接以向基板喷射气体并吹浮起基板;
数个定位销,设置在夹盘的顶表面,该数个定位销被分成两组,即第一组定位销和第二组定位销,每个定位销由一独立的气缸驱动,驱动第一组定位销的气缸与一气体管道连接,驱动第二组定位销的气缸与另一气体管道连接;
中空轴,该中空轴的内壁开设有四个气体槽,每个气体槽对应一个气体管道以向该气体管道供应气体;
旋转轴,设置在中空轴内,旋转轴的外壁与中空轴的内壁之间具有间距;
两对密封圈,其中该两对密封圈中的一对密封圈设置在给驱动第一组定位销的气缸供气的气体槽的两侧,该两对密封圈中的另一对密封圈设置在给驱动第二组定位销的气缸供气的气体槽的两侧;
其中,中空轴在两个相邻的气体槽之间设置有排气口,该两个相邻的气体槽中的一个气体槽给驱动第一组定位销或第二组定位销的气缸供气,该两个相邻的气体槽中的另一个气体槽给第一气孔或第二气孔供气,旋转轴的外壁设置有挡墙和凹槽,挡墙与中空轴的排气口相对应,凹槽与给第一气孔或第二气孔供气的气体槽相匹配。
2.根据权利要求1所述的基板支撑装置,其特征在于,所述挡墙成直角、多边形或弧形。
3.根据权利要求1所述的基板支撑装置,其特征在于,所述旋转轴与夹盘相连接,清洗基板背面时,旋转轴在中空轴内转动,但中空轴不转动。
4.根据权利要求1所述的基板支撑装置,其特征在于,所述四个气体槽均为环形。
5.根据权利要求1所述的基板支撑装置,其特征在于,所述中空轴设有四个进气口,每个进气口与一个气体槽相连通。
6.根据权利要求1所述的基板支撑装置,其特征在于,所述旋转轴在中空轴内转动时,四个气体管道分别随着旋转轴转动。
7.根据权利要求1所述的基板支撑装置,其特征在于,所述每个第一气孔是倾斜的,并与夹盘的底面形成一定角度。
8.根据权利要求1所述的基板支撑装置,其特征在于,所述每个第二气孔垂直于夹盘。
9.根据权利要求1所述的基板支撑装置,其特征在于,所述两组定位销交替分布,所述两组定位销交替卡固基板。
10.根据权利要求1所述的基板支撑装置,其特征在于,还包括数个设置在夹盘顶表面上的导柱,每个导柱凸伸形成支撑基板的支撑部,每个导柱的侧表面作为引导面,引导基板精确地放置在支撑部上。
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Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004172204A (ja) * | 2002-11-18 | 2004-06-17 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
JP2004536444A (ja) * | 2000-12-04 | 2004-12-02 | アプライド マテリアルズ インコーポレイテッド | 回転可能な半導体基板支持アセンブリ用の冷却ガス配送装置 |
JP2005332889A (ja) * | 2004-05-18 | 2005-12-02 | Kobe Steel Ltd | 圧力処理装置 |
JP2007176637A (ja) * | 2005-12-27 | 2007-07-12 | Harmotec Corp | 非接触搬送装置 |
CN104813460A (zh) * | 2012-11-27 | 2015-07-29 | 盛美半导体设备(上海)有限公司 | 基板支撑装置 |
WO2015184628A1 (en) * | 2014-06-06 | 2015-12-10 | Acm Research (Shanghai) Inc. | Apparatus and method for removing film on edge of backside of wafer |
CN105318129A (zh) * | 2014-05-30 | 2016-02-10 | 盛美半导体设备(上海)有限公司 | 带通气槽旋转轴 |
JP2016065268A (ja) * | 2014-09-24 | 2016-04-28 | 株式会社日立国際電気 | 基板処理装置、ガス導入シャフト及びガス供給プレート |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005082837A (ja) * | 2003-09-05 | 2005-03-31 | Shin Meiwa Ind Co Ltd | 真空成膜方法、装置、及びそれらを用いて製造されたフィルタ |
JP6093234B2 (ja) * | 2013-05-01 | 2017-03-08 | 日本ピラー工業株式会社 | 多ポートロータリジョイント |
-
2016
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Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004536444A (ja) * | 2000-12-04 | 2004-12-02 | アプライド マテリアルズ インコーポレイテッド | 回転可能な半導体基板支持アセンブリ用の冷却ガス配送装置 |
JP2004172204A (ja) * | 2002-11-18 | 2004-06-17 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
JP2005332889A (ja) * | 2004-05-18 | 2005-12-02 | Kobe Steel Ltd | 圧力処理装置 |
JP2007176637A (ja) * | 2005-12-27 | 2007-07-12 | Harmotec Corp | 非接触搬送装置 |
CN104813460A (zh) * | 2012-11-27 | 2015-07-29 | 盛美半导体设备(上海)有限公司 | 基板支撑装置 |
CN105318129A (zh) * | 2014-05-30 | 2016-02-10 | 盛美半导体设备(上海)有限公司 | 带通气槽旋转轴 |
WO2015184628A1 (en) * | 2014-06-06 | 2015-12-10 | Acm Research (Shanghai) Inc. | Apparatus and method for removing film on edge of backside of wafer |
JP2016065268A (ja) * | 2014-09-24 | 2016-04-28 | 株式会社日立国際電気 | 基板処理装置、ガス導入シャフト及びガス供給プレート |
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