CN109476555A - 半导体制造装置用部件和半导体制造装置用部件的制造方法 - Google Patents

半导体制造装置用部件和半导体制造装置用部件的制造方法 Download PDF

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CN109476555A
CN109476555A CN201780044497.9A CN201780044497A CN109476555A CN 109476555 A CN109476555 A CN 109476555A CN 201780044497 A CN201780044497 A CN 201780044497A CN 109476555 A CN109476555 A CN 109476555A
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ceramic component
bonding layer
component
pedestal
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CN109476555B (zh
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三矢耕平
丹下秀夫
堀田元树
小川贵道
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Niterra Co Ltd
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NGK Spark Plug Co Ltd
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Abstract

本说明书中，公开了能抑制第1陶瓷构件与第2陶瓷构件的接合强度的降低的技术。半导体制造装置用部件具备：第1陶瓷构件，其由以AlN为主成分的材料形成；第2陶瓷构件，其由以AlN为主成分的材料形成；和，接合层，其配置于第1陶瓷构件与第2陶瓷构件之间、且用于接合第1陶瓷构件和第2陶瓷构件。接合层含有包含Gd和Al的复合氧化物、以及Al2O3，且不含AlN。

Description

半导体制造装置用部件和半导体制造装置用部件的制造方法
技术领域
本说明书中公开的技术涉及半导体制造装置用部件。
背景技术
作为半导体制造装置用部件，使用有基座(加热装置)。基座例如具备：内部具有加热器的板状的陶瓷制的保持构件；配置于保持构件的一面侧的圆筒状的陶瓷制的支撑构件；和，配置于保持构件与支撑构件之间、且用于接合保持构件的一个面与支撑构件的一个面的接合层。在保持构件的与一个面相反侧的保持面配置有晶片。对于基座，利用通过对加热器施加电压而产生的热，对配置于保持面的晶片进行加热。已知的是，这样的基座中，保持构件和支撑构件由以导热率较高的AlN(氮化铝)为主成分的材料形成，接合层由包含AlN的材料形成(例如参照专利文献1、2)。
现有技术文献
专利文献
专利文献1：日本专利第4032971号公报
专利文献2：日本特开2004-345952号公报
发明内容
发明要解决的问题
上述使用有包含AlN的接合层的半导体制造用部件中，将以AlN为主成分的保持构件与支撑构件用包含AlN粉末的接合剂接合时的接合温度设定为低于将保持构件与支撑构件焙烧时的焙烧温度的温度。这是由于，接合温度如果设定为将保持构件与支撑构件焙烧时的焙烧温度以上，则有时以AlN为主成分的保持构件、支撑构件本身发生变形。
然而，接合温度如果设定为低于将保持构件与支撑构件焙烧时的焙烧温度的温度，则接合剂中的AlN粉末不会充分被焙烧，有时直接以粉末状态聚集。AlN粉末直接以粉末状态聚集时，接合层内产生空洞，从而保持构件与支撑构件的接合强度有时降低。
需要说明的是，这样的课题不限定于构成基座的保持构件和支撑构件的接合，例如构成静电卡盘等保持装置的陶瓷构件彼此的接合中也为相同的课题。另外，这样的课题不限定于保持装置，例如构成喷头等半导体制造装置用部件的陶瓷构件彼此的接合中为相同的课题。
本说明书中，公开了能解决上述课题的技术。
用于解决问题的方案
本说明书中公开的技术例如可以以以下的方式实现。
(1)本说明书中公开的半导体制造装置用部件具备：第1陶瓷构件，其由以AlN为主成分的材料形成；第2陶瓷构件，其由以AlN为主成分的材料形成；和，接合层，其配置于前述第1陶瓷构件与前述第2陶瓷构件之间、且用于接合前述第1陶瓷构件和前述第2陶瓷构件，其中，前述接合层含有包含Gd和Al的复合氧化物、以及Al2O3，且不含AlN。本申请的发明人通过实验等发现：含有包含Gd(钆)和Al(铝)的复合氧化物、以及Al2O3(氧化铝)、且不含AlN(氮化铝)的接合层与包含AlN的接合层相比，即使将由以AlN为主成分的材料形成的陶瓷构件彼此接合时的接合温度低于将该陶瓷构件焙烧时的焙烧温度，也可以以高的接合强度形成。因此，根据本半导体制造装置用部件，通过使接合层为含有包含Gd和Al的复合氧化物、以及Al2O3，且不含AlN的构成，从而与接合层包含AlN的情况相比，可以抑制第1陶瓷构件与第2陶瓷构件的接合强度的降低。
(2)上述半导体制造装置用部件中，可以为如下构成：前述接合层中，前述复合氧化物的含有率为10mol％以上且86mol％以下。根据本半导体制造装置用部件，与接合层包含AlN的情况相比，可以使接合温度为更低的温度、且抑制接合强度降低。
(3)本说明书中公开的半导体制造装置用部件的制造方法包括如下工序：准备由以AlN为主成分的材料形成的第1陶瓷构件的工序；准备由以AlN为主成分的材料形成的第2陶瓷构件的工序；和，在前述第1陶瓷构件与前述第2陶瓷构件之间，以夹设有包含Gd2O3和Al2O3、且不含AlN的接合剂的状态进行加热加压，从而将前述第1陶瓷构件与前述第2陶瓷构件接合的工序。
(4)本说明书中公开的半导体制造装置用部件具备：第1陶瓷构件，其由以AlN为主成分的材料形成；第2陶瓷构件，其由以AlN为主成分的材料形成；和，多个接合部，其配置于前述第1陶瓷构件与前述第2陶瓷构件之间、且用于接合前述第1陶瓷构件和前述第2陶瓷构件，其中，前述接合部含有包含Gd和Al的复合氧化物、以及Al2O3，且不含AlN。根据本半导体制造装置用部件，通过使接合部为含有包含Gd和Al的复合氧化物、以及Al2O3、且不含AlN的构成，从而与接合部包含AlN的情况相比，可以抑制第1陶瓷构件与第2陶瓷构件的接合强度的降低。
(5)上述半导体制造装置用部件中，可以为如下构成：前述接合部中，前述复合氧化物的含有率为10mol％以上且86mol％以下。根据本半导体制造装置用部件，与接合部包含AlN的情况相比，可以使接合温度为更低的温度、且抑制接合强度降低。
需要说明的是，本说明书中公开的技术可以以各种方式实现，例如可以以静电卡盘、真空卡盘等保持装置、基座等加热装置、喷头等半导体制造装置用部件的方式实现。
附图说明
图1为示意性示出本实施方式中的基座100的外观构成的立体图。
图2为示意性示出本实施方式中的基座100的XZ截面构成的说明图。
图3为示出本实施方式中的基座100的制造方法的流程图。
图4为示出Al2O3和Gd2O3相对于温度的状态变化的说明图。
图5为示意性示出实施例的基座100的试验片的SEM图像的说明图。
图6为示意性示出比较例的基座的试验片的SEM图像的说明图。
图7为示意性示出变形例的基座的试验片的SEM图像的说明图。
具体实施方式
A.实施方式：
A-1.基座100的构成：
图1为示意性示出本实施方式中的基座100的外观构成的立体图，图2为示意性示出本实施方式中的基座100的XZ截面构成的说明图。各图中，示出用于特定方向的彼此正交的XYZ轴。本说明书中，方便起见，将Z轴正向称为上方向、Z轴负向称为下方向，基座100实际上可以以与这样的朝向不同的朝向设置。基座100相当于权利要求书中的半导体制造装置用部件。
基座100是保持对象物(例如晶片W)且加热至规定的处理温度的装置，例如在半导体装置的制造工序中使用的薄膜形成装置(例如CVD装置、溅射装置)、蚀刻装置(例如等离子体蚀刻装置)中具备。基座100具备在规定的排列方向(本实施方式中上下方向(Z轴方向))上并列配置的保持构件10和支撑构件20。保持构件10和支撑构件20以保持构件10的下表面(以下，称为“保持侧接合面S2”)与支撑构件20的上表面(以下，称为“支撑侧接合面S3”)在上述排列方向上对置的方式配置。基座100进而具备接合层30，所述接合层30配置于保持构件10的保持侧接合面S2与支撑构件20的支撑侧接合面S3之间。保持构件10相当于权利要求书中的第1陶瓷构件，支撑构件20相当于权利要求书中的第2陶瓷构件。
(保持构件10)
保持构件10例如为圆形平面的板状构件，由以AlN(氮化铝)为主成分的陶瓷形成。需要说明的是，此处所谓主成分是指，含有比率(重量比率)最多的成分。保持构件10的直径例如为100mm～500mm左右，保持构件10的厚度例如为3mm～15mm左右。
在保持构件10的内部设有加热器50，所述加热器50由导电性材料(例如钨、钼等)形成的线状的电阻发热体构成。加热器50的一对端部配置于保持构件10的中央部附近。另外，在保持构件10的内部设有一对通孔52。各通孔52为沿上下方向延伸的线状的导电体，各通孔52的上端与加热器50的各端部连接，各通孔52的下端配置于保持构件10的保持侧接合面S2侧。另外，在保持构件10的保持侧接合面S2的中央部附近配置有一对受电电极54。各受电电极54与各通孔52的下端连接。由此，加热器50与各受电电极54进行电连接。
(支撑构件20)
支撑构件20例如为沿上下方向延伸的圆筒状构件，从支撑侧接合面S3(上表面)至下表面S4形成有沿上下方向贯通的贯通孔22。支撑构件20与保持构件10同样地由以AlN为主成分的陶瓷形成。支撑构件20的外径例如为30mm～90mm左右，内径例如为10mm～60mm左右，上下方向的长度例如为100mm～300mm左右。在支撑构件20的贯通孔22内收纳有一对电极端子56。各电极端子56为沿上下方向延伸的棒状的导电体。各电极端子56的上端通过硬钎焊接合在各受电电极54上。对一对电极端子56由电源(未作图示)施加电压时加热器50发热，由此保持构件10被加热、且保持于保持构件10的上表面(以下，称为“保持面S1”)的晶片W被加热。需要说明的是，加热器50尽量没有遗漏地加热保持构件10的保持面S1，因此，例如在Z方向观察，以大致同心圆状配置。需要说明的是，在支撑构件20的贯通孔22内收纳有热电偶的2条金属线60(图2中仅图示1条)。各金属线60以沿上下方向延伸的方式配置，各金属线60的上端部分62嵌入保持构件10的中央部。由此，测定保持构件10内的温度，并基于其测定结果实现晶片W的温度控制。
(接合层30)
接合层30为圆环状的片层，用于接合保持构件10的保持侧接合面S2与支撑构件20的支撑侧接合面S3。接合层30由包含GdAlO3和Al2O3(氧化铝)、且不含AlN的材料形成。接合层30的外径例如为30mm～90mm左右，内径例如为10mm～60mm左右，厚度例如为1μm～100μm左右。
A-2.基座100的制造方法：
接着，对本实施方式中的基座100的制造方法进行说明。图3为示出本实施方式中的基座100的制造方法的流程图。首先，准备保持构件10和支撑构件20(S110)。如上述，保持构件10和支撑构件20均由以AlN为主成分的陶瓷形成。需要说明的是，保持构件10和支撑构件20可以通过公知的制造方法制造，因此，此处省略制造方法的说明。
接着，准备作为接合层30的形成材料的糊剂状的接合剂(S120)。具体而言，将Gd2O3(氧化钆)粉末和Al2O3粉末以规定的比率混合，进而，与丙烯酸类粘结剂和丁基卡必醇一起进行混合，从而形成糊剂状的接合剂。需要说明的是，糊剂状的接合剂的形成材料的组成比例如优选Gd2O3为24mol％、Al2O3为76mol％。接着，在保持构件10与支撑构件20之间配置准备好的糊剂状的接合剂(S130)。具体而言，对保持构件10的保持侧接合面S2与支撑构件20的支撑侧接合面S3进行镜面研磨，使各接合面S2、S3的表面粗糙度为1μm以下，平坦度为10μm以下。然后，借助掩模通过进行印刷将糊剂状的接合剂涂布于保持构件10的保持侧接合面S2和支撑构件20的支撑侧接合面S3中的至少一者。之后，借助糊剂状的接合剂使支撑构件20的支撑侧接合面S3与保持构件10的保持侧接合面S2重叠，从而形成保持构件10与支撑构件20的层叠体。
接着，将保持构件10与支撑构件20的层叠体配置于热压炉内，进行加压且加热(S140)。由此，糊剂状的接合剂熔融而形成接合层30，保持构件10与支撑构件20通过接合层30而接合。该加热·加压接合中的压力优选设定为0.1MPa以上且15MPa以下的范围内。加热·加压接合中的压力设定为0.1MPa以上时，在被接合构件(保持构件10、支撑构件20)的表面存在弯曲等的情况下，也可以抑制被接合构件间产生未接合的间隙，可以抑制初始的接合强度降低。另外，加热·加压接合中的压力设定为15MPa以下时，可以抑制保持构件10的破裂、支撑构件20的变形发生。需要说明的是，对接合面S2、S3赋予0.2Kgf/cm2～3Kgf/cm2的压力。
另外，该加热·加压接合中的温度优选上升至1750℃。加热·加压接合中的温度上升至1750℃后，维持1750℃的状态约10分钟，然后，将热压炉内的温度降低至室温。加热·加压接合后，根据需要进行后处理(外周、上下表面的研磨、端子的形成等)。通过以上的制造方法，制造上述构成的基座100。
接着，对接合剂中的Gd2O3的含有率进行说明。接合剂中的Gd2O3的含有率优选5mol％以上且43mol％以下。图4为示出Al2O3和Gd2O3相对于温度的状态变化的说明图。根据图4可以理解：接合剂中的Gd2O3的含有率为5mol％以上且43mol％以下的情况下，可以在较低的接合温度(接近于1720度的温度)下将接合剂形成为接合层30。此处，接合剂中的Gd2O3的含有率为5mol％以上且43mol％以下时，接合层30中的GdAlO3的含有率成为10mol％以上且86mol％以下。即，接合层30中的GdAlO3的含有率为10mol％以上且86mol％以下的情况下，与包含AlN的接合剂相比，可以使接合温度为更低的温度、且抑制保持构件10与支撑构件20的接合强度(接合层30的接合强度)降低。
A-3.性能评价：
对于实施例的基座100和比较例的基座，进行以下说明的性能评价。
A-3-1.关于实施例和比较例：
实施例的基座100是以上述制造方法制造的。比较例的基座具备保持板、支撑体和接合层。实施例的基座100和比较例的基座在以下方面相同。
(保持构件的构成)
·材料：以AlN为主成分的陶瓷
·直径：100mm～500mm
·厚度：3mm～15mm
(支撑构件的构成)
·材料：以AlN为主成分的陶瓷
·外径：30mm～90mm
·内径：10mm～60mm
·上下方向的长度：100mm～300mm
(接合层的外形)
·外径：30mm～90mm
·内径：10mm～60mm
·厚度：1μm～100μm
实施例的基座100和比较例的基座在以下方面不同。
(接合层的材料)
·实施例的基座100的接合层30的材料：包含GdAlO3和Al2O3、且不含AlN。
·比较例的基座的接合层的材料：包含AlN。
比较例的基座的制造方法与实施例的基座100的上述制造方法相比，在Gd2O3粉末的基础上，将AlN粉末与Al2O3粉末、丙烯酸类粘结剂和丁基卡必醇一起混合，从而形成将Gd2O3粉末、AlN粉末和Al2O3粉末的总计设为100重量％时、包含5重量％的AlN粉末的糊剂状的接合剂，在这一方面不同，但除此之外的方面基本相同。
A-3-2.评价方法：
作为接合层的接合强度的评价，对于实施例的基座100和比较例的基座，进行了三点弯曲试验。
(关于三点弯曲试验)
三点弯曲试验中，例如将包含实施例的基座100的保持构件10、支撑构件20和接合层30的规定尺寸的接合部分切出作为试验片，配置于具备一对支点和压头的三点弯曲试验机。具体而言，将切出的试验片内的、保持构件10的部分和支撑构件20的部分配置于各支点上，从上方将压头压接于接合层30的部分。接着，逐渐增大压头对于接合层30的压接力，从而逐渐增大对接合层30的部分施加的载荷，测定接合层30断裂时的断裂载荷。然后，将整体由以AlN为主成分的陶瓷形成的母材的断裂载荷作为基准载荷，基于试验片的断裂载荷相对于该基准载荷的比率，对接合层30的接合强度进行评价。
A-3-3.评价结果：
(关于三点弯曲试验)
对于实施例的基座100，三点弯曲试验中，接合层30的接合强度相对于基准载荷约为90％左右的强度。另一方面，对于比较例的基座，接合层30的接合强度相对于基准载荷为40％左右的强度，低于实施例的基座100的接合层30的接合强度。
A-4.本实施方式的效果：
如上述，包含GdAlO3和Al2O3、且不含AlN的接合层30与包含AlN的接合层相比，即使将由以AlN为主成分的材料形成的陶瓷构件(保持构件10、支撑构件20)彼此接合时的接合温度低于将该陶瓷构件焙烧时的焙烧温度，也可以以高的接合强度形成。图5为示意性示出通过SEM(扫描型电子显微镜)观察实施例的基座100的试验片时的SEM图像的说明图。如图5所示那样可知，接合层30的形成材料内、特别是GdAlO3在低的温度下流动性也高，从而以填埋作为保持构件10和支撑构件20的形成材料的AlN间的间隙的方式扩展。由该SEM图像还可以理解：通过接合层30，可以以高的接合强度将保持构件10与支撑构件20接合。另外，接合温度低于保持构件10等的焙烧温度，因此，可以抑制以AlN为主成分的保持构件10、支撑构件20本身发生变形。
需要说明的是，本说明书中，“不含AlN”是指，接合层中，不含多个AlN颗粒的聚集体，且不含具有由彼此相邻的多个AlN颗粒所围成的间隙的聚集体。图6为示意性示出比较例的基座的试验片的SEM图像的说明图。比较例的基座与上述实施方式不同，其为通过由包含AlN的材料形成的接合层30x来接合保持构件10与支撑构件20的基座。如同一图所示那样，特意添加有AlN的接合层30x中，有时形成多个AlN颗粒的聚集体G。该聚集体G具有由构成该聚集体G、且彼此相邻的多个AlN颗粒所围成的间隙P。另一方面，如上述实施方式，即使为由不含AlN的材料形成的接合层30，例如半导体制造装置用部件的制造工序等中，源自以AlN为主成分的保持构件10、支撑构件20的AlN颗粒有时也析出。但是，对于如此未特意添加AlN的接合层30，虽然存在源自保持构件10、支撑构件20的成分的AlN颗粒的析出，但是成为AlN颗粒不形成聚集体G而AlN颗粒离散地存在于接合层30的形态。因此，本说明书中，“不含AlN”是指，接合层(接合部)中，不含多个AlN颗粒的聚集体，且不含具有由彼此相邻的多个AlN颗粒所围成的间隙的聚集体。需要说明的是，基座的剖面图中，在接合层(接合部)与陶瓷构件的边界附近，接合层(接合部)的一部分有时进入剖面图中游离的AlN颗粒间，但该形态不相当于具有孔隙的聚集体。
B.变形例：
本说明书中公开的技术不限定于上述实施方式，在不脱离其主旨的范围内可以变形为各种方式，例如也可以为如下的变形。
图7为示意性示出变形例的基座的试验片的SEM图像的说明图。变形例的基座不是由接合层30而是由多个接合部30X来接合保持构件10与支撑构件20，在这一方面与上述实施方式的基座100不同。换言之，变形例的基座中，多个接合部30X离散地形成于保持构件10与支撑构件20之间。具体而言，如图7所示那样，保持构件10与支撑构件20借助作为保持构件10和支撑构件20的形成材料的AlN颗粒而部分地连接。
此处，本说明书中，接合部(接合层)与保持构件10和支撑构件20的边界由外形线划分，所述外形线沿着构成保持构件10和支撑构件20的AlN颗粒彼此连接而成的一体的AlN颗粒组的表面。即，由外形线所围成的区域可以成为接合层(接合部)。图7中，示出由外形线L1所围成的接合部30X和由外形线L2所围成的接合部30X。各接合部包含GdAlO3和Al2O3、且不含AlN。即使为这样的变形例的基座，也与上述实施方式同样地，可以抑制保持构件10与支撑构件20的接合强度的降低。另外，变形例的基座中，各接合部30X中，GdAlO3的含有率如果为10mol％以上且86mol％以下，则与各接合部包含AlN的情况相比，可以使接合温度为更低的温度、且抑制接合强度降低。
上述实施方式和变形例中的形成保持构件10和支撑构件20的陶瓷只要包含以AlN(氮化铝)作为主成分，就也可以包含其他元素。
上述实施方式和变形例中，形成接合层30(接合部30X)的材料可以含有除GdAlO3以外的包含Al和Gd的复合氧化物。另外，接合层30(接合部30X)只要含有包含Al和Gd的复合氧化物、以及Al2O3即可，可以含有除AlN以外的物质。例如，上述实施方式中，接合层30中，有时含有：由从保持构件10、支撑构件20等陶瓷构件扩散的Y(钇)生成的包含Y和Al的复合氧化物。
上述实施方式和变形例中，在保持构件10与支撑构件20之间，例如可以与接合层30(接合部30X)一起夹设有跟该接合层30(接合部30X)的组成不同的第2接合层(第2接合部)。即，保持构件10与支撑构件20可以借助组成彼此不同的多个接合层或接合部而接合。
另外，上述实施方式中的基座100的制造方法只不过是一例，可以进行各种变形。
本发明不限定于基座100，也可以用于：具备聚酰亚胺加热器等其他加热装置、陶瓷板和基底板、且在陶瓷板的表面上保持对象物的保持装置(例如静电卡盘、真空卡盘)、喷头等其他半导体制造装置用部件。
附图标记说明
10：保持构件 20：支撑构件 22：贯通孔 30：接合层 30X：接合部 50：加热器 52：通孔 54：受电电极 56：电极端子 60：金属线 62：上端部分 100：基座 G：聚集体 L1、L2：外形线 P：间隙 S1：保持面 S2：保持侧接合面 S3：支撑侧接合面 S4：下表面 W：晶片。

Claims (5)

1.一种半导体制造装置用部件，其特征在于，其具备：
第1陶瓷构件，其由以AlN为主成分的材料形成；
第2陶瓷构件，其由以AlN为主成分的材料形成；和，
接合层，其配置于所述第1陶瓷构件与所述第2陶瓷构件之间、且用于接合所述第1陶瓷构件和所述第2陶瓷构件，
所述接合层含有包含Gd和Al的复合氧化物、以及Al2O3，且不含AlN。
2.根据权利要求1所述的半导体制造装置用部件，其特征在于，
所述接合层中，
所述复合氧化物的含有率为10mol％以上且86mol％以下。
3.一种半导体制造装置用部件的制造方法，其特征在于，包括如下工序：
准备由以AlN为主成分的材料形成的第1陶瓷构件的工序；
准备由以AlN为主成分的材料形成的第2陶瓷构件的工序；和，
在所述第1陶瓷构件与所述第2陶瓷构件之间，以夹设有包含Gd2O3和Al2O3、且不含AlN的接合剂的状态进行加热加压，从而将所述第1陶瓷构件与所述第2陶瓷构件接合的工序。
4.一种半导体制造装置用部件，其特征在于，其具备：
第1陶瓷构件，其由以AlN为主成分的材料形成；
第2陶瓷构件，其由以AlN为主成分的材料形成；和，
多个接合部，其配置于所述第1陶瓷构件与所述第2陶瓷构件之间、且用于接合所述第1陶瓷构件和所述第2陶瓷构件，
所述接合部含有包含Gd和Al的复合氧化物、以及Al2O3，且不含AlN。
5.根据权利要求4所述的半导体制造装置用部件，其特征在于，
所述接合部中，
所述复合氧化物的含有率为10mol％以上且86mol％以下。
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