CN109400176A - 一种高性能氮化硅陶瓷及其制备方法和应用 - Google Patents
一种高性能氮化硅陶瓷及其制备方法和应用 Download PDFInfo
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Abstract
本发明属于陶瓷技术领域,公开了一种高性能氮化硅陶瓷及其制备方法,所述氮化硅(Si3N4)陶瓷是将Si、Eu2O3、助剂Al2O3‑Re2O3经混料,干燥后,得到Si‑Eu2O3‑Al2O3‑Re2O3混合粉体,将Si‑Eu2O3‑Al2O3‑Re2O3混合粉体进行造粒,然后将造粒的粉体进行干压,放入石墨炉中升温Ⅰ至1300~1450℃并保温Ⅰ进行氮化,再采用热压烧结,在气氛为1atm的氮气,加压到10~30MPa,升温Ⅱ至1600~1900℃并保温Ⅱ制得。本发明通过引入Eu2O3催化剂加快Si粉氮化,引入Eu2O3‑Al2O3‑Re2O3做为烧结助剂,改善了Si3N4致密化和性能。
Description
技术领域
本发明属于陶瓷材料技术领域,更具体地,涉及一种高性能氮化硅(Si3N4)陶瓷及其制备方法和应用。
背景技术
Si3N4陶瓷具有耐磨、耐高温、高导热等优异性能,广泛应用于LED散热基板、高速切削刀具以及轴承球等。通常Si3N4陶瓷的制备是以高纯Si3N4粉体为原料、在添加烧结助剂的前提下,通过气压、热压或热等静压烧结制备,但是作为原料的氮化硅成本较高,使得制备得到的氮化硅陶瓷成本较高。
近年来,虽然出现了以Si粉为原料,通过反应烧结制备Si3N4陶瓷,降低成本。但是由于Si粉氮化的速度比较缓慢,短时间内很难实现完全氮化,纯硅粉在1400℃氮化2h的XRD如图1(a)所示;并且氮化后形成的Si3N4致密化较困难,很难获得高致密、高性能的Si3N4陶瓷。例如,Zhu等以Si粉为原料,通过反应气压烧结制备Si3N4陶瓷,首先Si粉在1400℃保温8h完成氮化,然后形成的Si3N4粉体继续升温到1900℃在10atm氮气下保温12h才能完成致密化(X.W.Zhu,Y.Zhou,K.Hirao,Z."Processing and Thermal Conductivity ofSintered Reaction-Bonded Silicon Nitride.I:Effect of Si PowderCharacteristics,"J.Am.Ceram.Soc.,2006,89:3331-3339)。Si粉反应气压烧结制备Si3N4陶瓷主要存在两大问题:(1)Si粉氮化时间较长,需要在1400℃保温8h;(2)Si3N4致密化困难,致密化条件过于苛刻,烧结温度较高(1900℃)、保温时间较长(12h)。如此长周期并且苛刻的制备工艺部分抵消了以Si粉为原料带来的低成本优势。目前,主要通过缩减硅粉氮化时间来减少氮化硅陶瓷制备成本,这主要通过引入氮化催化剂实现,目前为止,具有最显著促进氮化催化作用的催化剂主要有ZrO2、TiO2、Eu2O3,研究表明,只有ZrO2和TiO2在促进氮化的同时还能促进致密化,然而,加入Eu2O3作为氮化催化剂时,虽然可以显著促进Si粉氮化,但是却抑制氮化硅的烧结致密化,同时,加入Eu2O3催化剂氮化后的氮化硅样品主要含有α相氮化硅,以α相氮化硅为原料特别有利于制备高性能氮化硅陶瓷。到目前为止,还没有使用Eu2O3做为氮化催化剂实现了致密氮化硅陶瓷的制备。
发明内容
为了解决上述现有技术存在的不足和缺点,提供一种高性能氮化硅(Si3N4)陶瓷。
本发明的另一目的在于提供上述高性能Si3N4陶瓷的制备方法。本发明通过引入Eu2O3催化剂加快Si粉氮化,引入Eu2O3-Al2O3-Re2O3做为烧结助剂,在完全氮化后,采用热压烧结,改善了Si3N4致密化和性能,从而实现低成本、快速制备高性能Si3N4陶瓷。
本发明的再一目的在于提供上述高性能Si3N4陶瓷的应用。
本发明的目的通过下述技术方案来实现:
一种高性能Si3N4陶瓷,所述氮化硅陶瓷是将Si、Eu2O3、助剂Al2O3-Re2O3经混料,干燥后得到Si-Eu2O3-Al2O3-Re2O3混合粉体,将Si-Eu2O3-Al2O3-Re2O3混合粉体进行造粒,然后将造粒的粉体进行干压,放入石墨炉中升温Ⅰ至1300~1450℃并保温Ⅰ进行氮化,再采用热压烧结,在气氛为1atm的氮气下,加压到10~30MPa,升温Ⅱ至1600~1900℃并保温Ⅱ制得。
优选地,所述Re为Sc、Y、La、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb或Lu中的一种以上。
优选地,所述Si:Eu2O3:Al2O3:Re2O3的质量比为(60~97):(1~20):(1~10):(1~10)。
更为优选地,所述Si:Eu2O3:Al2O3:Re2O3的质量比为17:1:1.1:0.9,所述Re为Y。
优选地,所述升温Ⅰ的速率为5~20℃/min;所述保温Ⅰ的时间为0.5~4h;升温Ⅱ的速率为5~10℃/min,所述保温Ⅱ的时间为0.5~4h。
优选地,所述Si3N4陶瓷的相对密度为95~99.9%,硬度为15~22GPa,断裂韧性为8~15MPa·m1/2,抗弯强度为800~1500Mpa。
更为优选地,所述Si3N4陶瓷的相对密度为99%,硬度为18GPa,断裂韧性为12MPa·m1/2,抗弯强度为1200Mpa。
所述的非氧化物陶瓷的制备方法,包括如下具体步骤:
S1.将Si:Eu2O3:Al2O3:Re2O3按质量比为(60~97):(1~20):(1~10):(1~10)进行配料,以乙醇为溶剂,以Si3N4球为球磨介质,在球磨机上混合,经混料、干燥后,得到混合均匀的Si-Eu2O3-Al2O3-Re2O3混合粉体;
S2.将Si-Eu2O3-Al2O3-Re2O3混合粉体放入热压炉石墨模具进行干压,在气氛为1atm的氮气,无机械加压下,以5~20℃/min的速度升温至1300~1450℃保温0.5~4h进行氮化;接着在机械加压为30MPa,气氛为1atm的氮气下,以5~10℃/min的速度升温至1600~1900℃进行烧结保温0.5~4h,制得高性能的Si3N4陶瓷。
优选地,步骤S1中所述混合的时间为4~12h。
所述的氮化硅陶瓷在LED散热基板、高速切削刀具和轴承领域中的应用。
与现有技术相比,本发明具有以下有益效果:
1.本发明采用Eu2O3作为添加剂,以低成本的Si为原料制备高性能氮化硅陶瓷,实现了硅粉的快速完全氮化硅,提高了氮化硅陶瓷的致密化。
2.本发明实现了氮化后以α相氮化硅为原料,显著提高了氮化硅陶瓷的硬度、断裂韧性和弯曲强度。
附图说明
图1为反应热压氮化阶段的XRD图谱。
图2为实施例1中反应热压烧结制得的氮化硅截面SEM照片。
具体实施方式
下面结合具体实施例进一步说明本发明的内容,但不应理解为对本发明的限制。若未特别指明,实施例中所用的技术手段为本领域技术人员所熟知的常规手段。除非特别说明,本发明采用的试剂、方法和设备为本技术领域常规试剂、方法和设备。
实施例1
1.制备:
(1)以Si粉(粒径<10μm)为基体原料,以Eu2O3粉(粒径为<10μm)、Al2O3粉(纯度为99.9%)和Y2O3粉(纯度为99.9%)为添加剂,按照Si粉质量分数为80%、TiO2质量分数为10%、Al2O3质量分数为5.5%,Y2O3粉的质量分数为4.5%进行配料,以乙醇为溶剂,以Si3N4球为球磨介质,在球磨机上混合8h,经混料、干燥后,得到混合均匀的Si-Eu2O3-Al2O3-Y2O3混合粉体。
(2)将Si-Eu2O3-Al2O3-Y2O3混合粉体放入热压炉石墨模具进行干压,在石墨炉中进行氮化,氮化工艺为:在气氛为1atm的氮气,无机械加压下,以20℃/min的速度升温至1400℃保温2h;接着在机械加压为30MPa,气氛为1atm的氮气下,继续在石墨炉中对完全氮化样品进行烧结,烧结工艺为:以10℃/min的速度升温至1800℃保温2h,制得高性能的Si3N4陶瓷。
2.性能测试:本实施例制得的Si3N4陶瓷的相对密度为99%,Si3N4陶瓷的XRD图谱如图1(b)所示,图1(a)表示相同的硅粉原料,不添加Eu2O3氮化催化剂时,在相同的氮化工艺下氮化后样品的XRD,在图1(a)中还有较多的残留硅粉,对比于图1(a)可知,加入Eu2O3可以实现硅粉的完全氮化,制得的氮化硅截面SEM照片,如图2所示。从图2中可知,制备的Si3N4陶瓷断面主要呈沿晶断裂且存在Si3N4大晶粒,可显著提高陶瓷的断裂韧性。测得Si3N4陶瓷的硬度为18GPa,断裂韧性为12MPa·m1/2,弯曲强度为1000Mpa。
实施例2
1.制备:按照实施例1方法将Si粉质量分数为80%、Eu2O3粉质量分数为10%、Al2O3质量分数为5.4%、Yb2O3粉质量分数为4.5%进行配料,其中氮化温度为1400℃保温2h,然后升温至1700℃保温2h,制备Si3N4陶瓷。
2.性能测试:制备所得Si3N4陶瓷的相对密度为99%,Si3N4陶瓷的硬度为18GPa,断裂韧性为13MPa·m1/2,弯曲强度为1000Mpa,氮化后的XRD如图1(c)中所示。
实施例3
1.制备:按照实施例1方法将Si粉质量分数为70%、Eu2O3粉质量分数为15%、Al2O3-La2O3粉质量分数为10%进行配料,其中Al2O3:La2O3质量分数比为75%:25%,其中氮化温度为1400℃保温2h,然后升温至1900℃保温2h,制备Si3N4陶瓷。
2.性能测试:制备所得Si3N4陶瓷的相对密度为98%,Si3N4陶瓷的硬度为18GPa,断裂韧性为15MPa·m1/2,弯曲强度为1200Mpa,氮化后的XRD如图1(d)中所示。
图1为反应热压氮化阶段的XRD图谱,其中,(a)纯Si粉在1400℃保温2h氮化;(b)Si-5%Eu2O3-Al2O3-Y2O3粉在1400℃保温2h氮化;(c)Si-10%Eu2O3-Al2O3-Y2O粉在1400℃保温2h氮化;(d)Si-15%Eu2O3-Al2O3-Y2O3粉在1400℃保温2h氮化。从图1中可知,在1400℃氮化2h的情况下,硅粉中不掺杂氮化催化剂时无法实现完全氮化,当分别加入5%,10%,15%的Eu2O3时均可以实现硅粉的完全氮化,说明Eu2O3可作为一种有效的氮化催化剂,并且加入5wt%的含量就可以实现硅粉的完全氮化。
实施例4
1.制备:按照实施例1方法将Si粉质量分数为65%、Eu2O3粉质量分数为20%、Al2O3-Lu2O3粉质量分数为15%进行配料,其中Al2O3:Lu2O3质量比为11:9,其中首先升温至1350℃保温1h,然后升温至1750℃保温2h,制备Si3N4陶瓷。
2.性能测试:制备所得Si3N4陶瓷的相对密度为99%,Si3N4陶瓷的硬度为18GPa,断裂韧性为10MPa·m1/2,弯曲强度为800Mpa。
实施例5
1.制备:按照实施例1方法将Si粉质量分数为85%、Eu2O3粉质量分数为10%、Al2O3-Y2O3粉质量分数为5%进行配料,其中Al2O3:Y2O3质量分数比为65%:35%,其中首先升温至1450℃保温0.5h,然后升温至1800℃保温1h,制备Si3N4陶瓷。
2.性能测试:制备所得Si3N4陶瓷的相对密度为97%,Si3N4陶瓷的硬度为19GPa,断裂韧性为13MPa·m1/2,弯曲强度为1400Mpa。
实施例6
1.制备:按照实施例1方法将Si粉质量分数为85%、Eu2O3粉质量分数为7.5%、Al2O3-Nd2O3粉质量分数为7.5%进行配料,其中Al2O3:Nd2O3质量分数比为50%:50%,其中首先升温至1400℃保温2h,然后升温至1800℃保温2h,制备Si3N4陶瓷。
2.性能测试:制备所得Si3N4陶瓷的相对密度为98%,Si3N4陶瓷的硬度为20GPa,断裂韧性为12MPa·m1/2,弯曲强度为1200Mpa。
实施例7
1.制备:按照实施例1方法将Si粉质量分数为90%、Eu2O3粉质量分数为5%、Al2O3-Gde2O3粉质量分数为5%进行配料,其中Al2O3:Gd2O3质量分数比为40%:60%,其中首先升温至1400℃保温2h,然后升温至1900℃保温2h,制备Si3N4陶瓷。
2.性能测试:制备所得Si3N4陶瓷的相对密度为97%,Si3N4陶瓷的硬度为18GPa,断裂韧性为15MPa·m1/2,弯曲强度为1000Mpa。
上述实施例为本发明较佳的实施方式,但本发明的实施方式并不受上述实施例的限制,其他的任何未背离本发明的精神实质与原理下所作的改变、修饰、替代、组合和简化,均应为等效的置换方式,都包含在本发明的保护范围之内。
Claims (10)
1.一种高性能氮化硅陶瓷,其特征在于,所述氮化硅陶瓷是将Si、Eu2O3、助剂Al2O3-Re2O3经混料,干燥后得到Si-Eu2O3-Al2O3-Re2O3混合粉体,将Si-Eu2O3-Al2O3-Re2O3混合粉体进行造粒,然后将造粒的粉体进行干压,放入石墨炉中升温Ⅰ至1300~1450℃并保温Ⅰ进行氮化,再采用热压烧结,在气氛为1atm的氮气下,加压到10~30MPa,升温Ⅱ至1600~1900℃并保温Ⅱ制得。
2.根据权利要求1所述的高性能氮化硅陶瓷,其特征在于,所述Re为Sc、Y、La、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb或Lu中的一种以上。
3.根据权利要求1所述的高性能氮化硅陶瓷,其特征在于,所述Si:Eu2O3:Al2O3:Re2O3的质量比为(60~97):(1~20):(1~10):(1~10)。
4.根据权利要求3所述的高性能氮化硅陶瓷,其特征在于,所述Si:Eu2O3:Al2O3:Re2O3的质量比为17:1:1.1:0.9,所述Re为Y。
5.根据权利要求3所述的高性能氮化硅陶瓷,其特征在于,所述升温Ⅰ的速率为5~20℃/min;所述保温Ⅰ的时间为0.5~4h;升温Ⅱ的速率为5~10℃/min,所述保温Ⅱ的时间为0.5~4h。
6.根据权利要求1所述的高性能氮化硅陶瓷,其特征在于,所述氮化硅陶瓷的相对密度为95~99.9%,硬度为15~22GPa,断裂韧性为8~15MPa·m1/2,抗弯强度为800~1500Mpa。
7.根据权利要求6所述的高性能氮化硅陶瓷,其特征在于,所述氮化硅陶瓷的相对密度为99%,硬度为18GPa,断裂韧性为12MPa·m1/2,抗弯强度为1200Mpa。
8.根据权利要求1-7任一项所述的氮化硅陶瓷的制备方法,其特征在于,包括如下具体步骤:
S1.将Si:Eu2O3:Al2O3:Re2O3按质量比为(60~97):(1~20):(1~10):(1~10)进行配料,以乙醇为溶剂,以Si3N4球为球磨介质,在球磨机上混合,经混料干燥后,得到混合均匀的Si-Eu2O3-Al2O3-Re2O3混合粉体;
S2.将Si-Eu2O3-Al2O3-Re2O3混合粉体放入热压炉石墨模具进行干压,在气氛为1atm的氮气,无机械加压下,以5~20℃/min的速率升温至1300~1450℃保温0.5~4h进行氮化;接着在机械加压为30MPa,气氛为1atm的氮气下,以5~10℃/min的速率升温至1600~1900℃进行烧结保温0.5~4h,制得高性能的Si3N4陶瓷。
9.根据权利要求8所述的氮化硅陶瓷的制备方法,其特征在于,步骤S1中所述混合的时间为4~12h。
10.权利要求1-7任一项所述的氮化硅陶瓷在LED散热基板、高速切削刀具和轴承领域中的应用。
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