CN109390372A - 像素结构及其形成方法、显示屏 - Google Patents
像素结构及其形成方法、显示屏 Download PDFInfo
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- CN109390372A CN109390372A CN201710669365.7A CN201710669365A CN109390372A CN 109390372 A CN109390372 A CN 109390372A CN 201710669365 A CN201710669365 A CN 201710669365A CN 109390372 A CN109390372 A CN 109390372A
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- 238000000034 method Methods 0.000 title claims abstract description 142
- 239000000758 substrate Substances 0.000 claims abstract description 104
- 239000000463 material Substances 0.000 claims description 420
- 239000010405 anode material Substances 0.000 claims description 110
- 238000002955 isolation Methods 0.000 claims description 99
- 229910052751 metal Inorganic materials 0.000 claims description 94
- 239000002184 metal Substances 0.000 claims description 94
- 238000000926 separation method Methods 0.000 claims description 76
- 229920002120 photoresistant polymer Polymers 0.000 claims description 51
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 17
- 229910052710 silicon Inorganic materials 0.000 claims description 17
- 239000010703 silicon Substances 0.000 claims description 17
- 229910015711 MoOx Inorganic materials 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 230000000873 masking effect Effects 0.000 claims description 5
- 230000000694 effects Effects 0.000 abstract description 20
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- 239000010410 layer Substances 0.000 description 832
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- 238000007740 vapor deposition Methods 0.000 description 11
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- 238000010276 construction Methods 0.000 description 8
- 230000008901 benefit Effects 0.000 description 7
- 238000001704 evaporation Methods 0.000 description 6
- 230000008020 evaporation Effects 0.000 description 6
- 238000001039 wet etching Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 208000027418 Wounds and injury Diseases 0.000 description 4
- 238000004380 ashing Methods 0.000 description 4
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- 208000014674 injury Diseases 0.000 description 4
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- 239000002356 single layer Substances 0.000 description 4
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- 239000003086 colorant Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
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- 238000004519 manufacturing process Methods 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 208000033748 Device issues Diseases 0.000 description 1
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- 229910052738 indium Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
- H10K59/353—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels characterised by the geometrical arrangement of the RGB subpixels
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/813—Anodes characterised by their shape
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/876—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/351—Thickness
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8051—Anodes
- H10K59/80515—Anodes characterised by their shape
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8051—Anodes
- H10K59/80518—Reflective anodes, e.g. ITO combined with thick metallic layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Geometry (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims (54)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710669365.7A CN109390372B (zh) | 2017-08-08 | 2017-08-08 | 像素结构及其形成方法、显示屏 |
PCT/CN2018/084056 WO2019029187A1 (zh) | 2017-08-08 | 2018-04-23 | 像素结构及其形成方法、显示屏 |
US16/729,814 US11081680B2 (en) | 2017-08-08 | 2019-12-30 | Pixel structure, method for forming the same, and display screen |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN201710669365.7A CN109390372B (zh) | 2017-08-08 | 2017-08-08 | 像素结构及其形成方法、显示屏 |
Publications (2)
Publication Number | Publication Date |
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CN109390372A true CN109390372A (zh) | 2019-02-26 |
CN109390372B CN109390372B (zh) | 2021-11-16 |
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CN201710669365.7A Active CN109390372B (zh) | 2017-08-08 | 2017-08-08 | 像素结构及其形成方法、显示屏 |
Country Status (3)
Country | Link |
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US (1) | US11081680B2 (zh) |
CN (1) | CN109390372B (zh) |
WO (1) | WO2019029187A1 (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110085636A (zh) * | 2019-04-09 | 2019-08-02 | 深圳市华星光电半导体显示技术有限公司 | 有机发光器件及其制作方法 |
CN110164930A (zh) * | 2019-05-22 | 2019-08-23 | 上海视涯信息科技有限公司 | 一种强微腔硅基有机发光显示装置及其形成方法 |
CN110165088A (zh) * | 2019-03-12 | 2019-08-23 | 上海视涯信息科技有限公司 | 一种oled器件的制备方法 |
CN110199402A (zh) * | 2018-09-19 | 2019-09-03 | 京东方科技集团股份有限公司 | 发光二极管及其制造方法、显示基板、显示设备 |
CN110649075A (zh) * | 2019-09-27 | 2020-01-03 | 京东方科技集团股份有限公司 | 微腔阳极结构、显示基板及其制作方法 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20210031085A (ko) * | 2019-09-11 | 2021-03-19 | 삼성전자주식회사 | 발광 소자 및 그 제조방법 |
CN113812014B (zh) * | 2020-03-18 | 2023-05-16 | 京东方科技集团股份有限公司 | 一种阵列基板及其制备方法和显示面板 |
US11980046B2 (en) * | 2020-05-27 | 2024-05-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for forming an isolation structure having multiple thicknesses to mitigate damage to a display device |
KR20220021966A (ko) * | 2020-08-13 | 2022-02-23 | 삼성디스플레이 주식회사 | 표시 패널, 이의 제조 방법 및 표시 패널을 포함하는 표시 장치 |
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CN107256879B (zh) * | 2017-06-12 | 2020-03-20 | 上海天马有机发光显示技术有限公司 | 有机发光显示面板及其制作方法、有机发光显示装置 |
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2017
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2019
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CN104409468A (zh) * | 2014-10-29 | 2015-03-11 | 京东方科技集团股份有限公司 | 显示基板及其显示装置、制作方法 |
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CN105720081A (zh) * | 2016-02-24 | 2016-06-29 | 京东方科技集团股份有限公司 | 一种有机发光二极管阵列基板、显示装置和制作方法 |
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CN110199402A (zh) * | 2018-09-19 | 2019-09-03 | 京东方科技集团股份有限公司 | 发光二极管及其制造方法、显示基板、显示设备 |
CN110199402B (zh) * | 2018-09-19 | 2022-02-01 | 京东方科技集团股份有限公司 | 发光二极管及其制造方法、显示基板、显示设备 |
US11552134B2 (en) | 2018-09-19 | 2023-01-10 | Beijing Boe Technology Development Co., Ltd. | Light emitting diode with microcavities and different reflective layers and fabricating method thereof, display substrate, and display apparatus |
CN110165088A (zh) * | 2019-03-12 | 2019-08-23 | 上海视涯信息科技有限公司 | 一种oled器件的制备方法 |
CN110165088B (zh) * | 2019-03-12 | 2022-03-25 | 合肥视涯技术有限公司 | 一种oled器件的制备方法 |
CN110085636A (zh) * | 2019-04-09 | 2019-08-02 | 深圳市华星光电半导体显示技术有限公司 | 有机发光器件及其制作方法 |
CN110164930A (zh) * | 2019-05-22 | 2019-08-23 | 上海视涯信息科技有限公司 | 一种强微腔硅基有机发光显示装置及其形成方法 |
CN110649075A (zh) * | 2019-09-27 | 2020-01-03 | 京东方科技集团股份有限公司 | 微腔阳极结构、显示基板及其制作方法 |
Also Published As
Publication number | Publication date |
---|---|
US11081680B2 (en) | 2021-08-03 |
CN109390372B (zh) | 2021-11-16 |
WO2019029187A1 (zh) | 2019-02-14 |
US20200136095A1 (en) | 2020-04-30 |
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