CN109326654B - 快速恢复反向二极管 - Google Patents

快速恢复反向二极管 Download PDF

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CN109326654B
CN109326654B CN201810856007.1A CN201810856007A CN109326654B CN 109326654 B CN109326654 B CN 109326654B CN 201810856007 A CN201810856007 A CN 201810856007A CN 109326654 B CN109326654 B CN 109326654B
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type silicon
region
die
semiconductor surface
bottom side
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CN109326654A (zh
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艾尔玛·维索茨基
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IXYS LLC
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Abstract

反向二极管管芯具有高反向击穿电压、短反向恢复时间Trr，并且在硬转换应用中长期使用时在反向击穿电压稳定性方面是坚固的。该管芯具有异常轻掺杂的底侧P型阳极区，并且在其上方还具有N‑型漂移区。两个区都具有体晶片材料。N+型接触区向下延伸到漂移区中。顶侧金属电极位于接触区上。P型硅外围侧壁区横向环绕在漂移区周围。顶侧钝化层环绕在顶侧电极周围。底侧金属电极位于管芯的底部上。管芯具有深氢离子层，其延伸通过N‑漂移区。管芯还具有浅离子层。两个离子层从底侧注入。

Description

快速恢复反向二极管
技术领域
所描述的实施例涉及反向二极管器件以及相关方法。
背景技术
几乎所有类型的具有高反向击穿电压能力的商用功率二极管都具有N-型底侧阴极。罕见的例外是所谓的“反向二极管”或“逆向二极管”，其可从加利福尼亚州米尔皮塔斯巴克艾路1590的IXYS公司商购获得。这些不寻常的二极管具有P型隔离结构，包括底侧P型阳极区以及P型外围侧壁扩散区。这些二极管不仅具有非常高的反向击穿电压，而且通常还表现出优异的动态鲁棒性。试图将此“反向二极管”技术扩展为具有较低反向恢复时间的所谓“快速二极管”。在文献和数据表中，二极管的反向恢复时间表示为Trr。如美国专利号8,716,745所述，在P型晶片上生长N-型外延硅层。与具有相同反向击穿能力的常规二极管相比，所得到的反向二极管被模拟为具有优异的稳定性和高的反向击穿电压，同时具有更薄的N-型层。有关反向二极管结构和P型隔离结构的更多信息，参见：1)Kelberlau等人于2005年8月30日提交的题为“Method For Fabricating Forward And Reverse BlockingDevices”的美国专利No.7,442,630；2)N.Zommer于1995年7月31日提交的题为“Method OfMaking A Reverse Blocking IGBT”的美国专利No.5,698,454；3)Springer、Berlin和Heidelberg出版的J.Lutz等人的“Semiconductor Power Devices”第146-147页，(2011)；4)美国加利福尼亚州，95035，米尔皮塔斯的IXYS公司的题为“Diode Chip”的数据表DWN17-18；5)Wisotzki等人于2005年11月20日提交的题为“Trench Separation DiffusionFor High Voltage Device”的美国专利No.9,590,033；6)Mochizuki等人于1980年7月10日提交的题为“Method of Manufacturing Semiconductor Device Having AluminumDiffused Semiconductor Substrate”的美国专利No.4,351,677；7)Green于2000年8月16日提交的题为“Thyristors Having a Novel Arrangement of Concentric PerimeterZones”的美国专利No.6,507,050；8)Kelberlau等人于2002年3月13日提交的题为“Forwardand Reverse Blocking Devices”的美国专利No.6,936,908；9)Neidig于2005年3月14日提交的题为“Power Semiconductor Component in the Planar Technique”的美国专利No.7,030,426；10)Veeramma等人于2003年8月27日提交的题为“Breakdown Voltage ForPower Devices”的美国专利No.8,093,652；11)德国兰佩尔泰姆，D-68623，的Edisonstrasse 15的IXYS有限公司的2004年题为“FRED，Rectifier Diode and ThyristorChips in Planar Design”的说明书。
发明内容
反向二极管管芯具有高反向击穿电压，当从与该击穿电压接近的高反向电压恢复时具有小的反向恢复时间Trr，并且在长期用于硬转换应用的反向击穿电压稳定性方面也是坚固的。反向二极管管芯具有体硅晶片材料的底侧P型阳极区，并且在其上方还具有体硅晶片材料的N-型漂移区。在结构中没有外延硅。对于反向二极管，底侧P型阳极区的P型掺杂剂浓度相对较轻。P型掺杂剂浓度小于8×1017原子/厘米3。N+型硅接触区从管芯的顶部半导体表面向下延伸并进入N-型漂移区中。P型硅外围侧壁区从管芯的四个外围侧边缘横向向内延伸。该P型硅外围侧壁区横向环绕N-型漂移区，使得P型硅外围侧壁区与底侧P型硅区相接。P型硅外围侧区是深的，并且从顶侧半导体表面一直向下延伸到底侧P型阳极区的顶部。管芯的四个外围侧边缘完全是P型硅。P型硅外围侧壁区和底侧P型硅区一起形成P型隔离结构。P型硅外围侧壁区的P型掺杂剂可以是铝或硼。
顶侧钝化层设置在管芯的顶部半导体表面的一部分上，使得该顶侧钝化层环绕在中央N+型硅接触区周围。该钝化设置在体晶片材料上而不是外延硅上。金属阴极电极设置在管芯顶侧上的N+型硅接触区的顶部上，并且金属阳极电极设置在管芯底侧上的底侧P型阳极区的底部上。
反向二极管还具有深氢离子层。该深氢离子层具有关于氢离子局部浓度峰值表面的分布。氢离子局部浓度峰值表面是在与底部半导体表面的平面平行的平面中延伸的平坦表面。氢离子局部浓度峰值表面延伸通过N-型硅区，而不延伸通过底侧P型硅区。在一个实施例中，氢离子局部浓度峰值表面设置在底侧P型阳极区的顶部与N+型接触区的底部之间的约一半处。此外，反向二极管还具有浅注入离子层。该浅层的离子可以是氢离子或氦离子。该浅离子层具有关于离子局部浓度峰值表面的分布。离子局部浓度峰值表面是在与管芯的底部半导体表面的平面平行的平面中延伸的平坦表面。离子局部浓度峰值表面延伸通过底侧P型硅区，但不延伸通过N-型硅区。在反向二极管的制造期间，没有穿过管芯的顶部半导体表面的离子注入。
在下面的详细描述中描述了进一步的细节和实施例以及技术。本发明内容并非旨在限制本发明。本发明由权利要求限定。
附图说明
附图中，相同的数字表示相同的组件，示出了本发明的实施例。
图1是根据一个新颖方面的快速恢复反向二极管器件管芯1的横截面侧视图。
图2是阐述关于图1的快速恢复反向二极管器件1的各种部件的各种细节和特性的表。
图3是根据一个新颖方面的制造方法100的流程图。
图4是备选的P型隔离结构的横截面侧视图，该P型隔离结构可用于新颖的反向二极管而不是图1所示的P型隔离结构。
具体实施方式
现在将详细参考背景示例和本发明的一些实施例，其示例在附图中示出。在下面的描述和权利要求中，当第一对象被称为被布置在第二对象“上方”或“上”时，应理解第一对象可以直接在第二对象上，或者介入的对象可以存在于第一对象和第二对象之间。类似地，诸如“顶部”、“顶侧”、“上”、“向上”、“下”、“向下”、“竖直”、“横向”、“侧面”、“下方”、“底部”和“底侧”在本文中用于描述所描述的结构的不同部分之间的相对取向，并且应当理解，所描述的整体结构实际上可以在三维空间中以任何方式取向。当在下面的描述中描述处理在晶片的底部上执行时(例如，当掺杂剂被称为向上扩散时)，应理解晶片实际上可以在这些处理步骤期间上下颠倒取向，并且可以以普通方式从顶部进行处理。
图1是根据一个新颖方面的快速恢复反向二极管器件管芯1的横截面侧视图。管芯1是分立二极管器件。管芯1具有矩形顶表面、矩形底表面和四个外围侧边缘。侧边缘2和3中的两个在横截面侧视图中示出。更具体地，底侧P型硅区4从管芯的底部半导体表面5向上延伸，并且还横向向外延伸到管芯的外围侧边缘2和3。底侧P型硅区4具有相对低的P型掺杂剂浓度，其小于8×1017原子/厘米3。这是反向二极管的阳极的低P型掺杂剂浓度。
N-型硅区6设置在底侧P型硅区4上方，如图1所示。这个N-型硅区6也称为N-漂移区，这个N-型硅区6是反向二极管的阴极，因为反向二极管的主要PN结是底侧P型硅区4的顶部与N-型硅区6的底部之间的结。N+型硅接触区7从顶部半导体表面8向下延伸到N-型硅区6中。
管芯还具有P型硅外围侧壁区9，其从管芯的四个外围侧边缘横向向内延伸，使得P型硅外围侧壁区9环绕在中心N-型硅区6周围。P型硅外围侧壁区9连接底侧P型硅区4并且还向上延伸到顶部半导体表面8。P型外围区9和P型底侧区4的组合形成所谓的“P型隔离结构”(有时也称为“P型隔离区”、或“P型分离扩散结构”、或“P型分离扩散区”)。该结构的P型硅从侧面外围地以及从底部下方地完全包围N-漂移硅区6。
尽管可以理解底侧P型硅区4和P型硅外围侧壁区9在这里合并，但是底侧P型硅区4被称为向外延伸到管芯的外围侧边缘。底侧P型硅区4被认为具有小于8×1017原子/厘米3的P型掺杂剂浓度，即使P型掺杂物浓度可能由于与来自P型硅外围侧壁区9的掺杂剂混合而在区9的外围部分处更高。该8×1017原子/厘米3浓度是在硅体积中测量的，该硅体积在阴极电极11正下方的区域4的中央部分中靠近底部半导体表面5。
重要的是，图1的结构中没有外延硅。重要的是，所有区4、6、7和9都是体硅材料并且是相同硅晶片的区。
如图所示，顶侧钝化层10设置在顶部半导体表面8的一部分上。如图所示，顶侧钝化层10覆盖P型硅外围侧壁区9的顶表面并环绕在N+型硅接触区7周围。图1中的附图标记15表示硅/钝化界面。顶侧金属电极11设置在N+型硅接触区7上。该顶侧电极11是二极管器件的阴极电极或阴极端子。底侧金属电极12设置在管芯的底部半导体表面5上。该底侧金属电极12全部跨底部半导体表面5从管芯边缘2延伸到管芯边缘3。底侧金属电极12以及底侧P型区4比顶侧金属电极11和N+型接触区7宽得多。底侧金属电极12是二极管器件的阳极电极或阳极端子。
另外，管芯1包括深氢离子层。该深层具有关于氢离子局部浓度峰值表面13在竖直尺寸上的分布。该氢离子局部浓度峰值表面13设置在平面内。该平面平行于底部半导体表面5的平面。氢离子局部浓度峰值表面13延伸通过N-型硅区6，而不延伸通过底侧P型硅区4的任何部分。该氢离子局部浓度峰值表面13的水平面设置在底侧P型硅区4的顶部与N+型硅接触区7的底部之间的中间附近。在图1的示例中，这是约110微米的深度(从底部半导体表面测量)。
另外，管芯1包括浅离子层。例如，这些离子可以是氢离子(质子)或氦离子。在本示例中，它们是氢离子。该浅离子层具有关于离子局部浓度峰值表面14在竖直尺寸上的分布。该离子局部浓度峰值表面14设置在平面中。该平面平行于底部半导体表面5的平面。离子局部浓度峰值表面14延伸通过底侧P型硅区4，但不延伸通过N-型硅区6的任何部分。在图1的示例中，离子局部浓度峰值表面14处于约35微米的深度(从底部半导体表面测量)。
重要的是，二极管器件的体硅不被用于在硅中产生复合中心的高能电子来照射。而且，没有通过体硅到钝化层界面15的离子注入(氢或氦)。从顶侧没有离子注入。氢离子的注入仅从结构的底侧发生。尽管美国专利No.8,716,745的图5的二极管500被模拟为具有良好的稳定性，但在实际实践中，该器件在击穿电压稳定性方面不如所期望的那样坚固。最初，该器件确实具有高反向击穿电压能力。然而，随着时间的推移使用这种类型的器件，一些器件表现出降低的反向击穿电压能力。认为这种性能下降至少部分是由于外延硅顶部处的硅与钝化层之间界面的质量。此外，如果采用高能电子照射以产生复合中心以便减少PN结附近的电荷载流子寿命，则硅/钝化界面可能进一步受损。在电子照射过程期间引入的高能电子一直通过晶片。晶片不能以如下方式被电子照射：仅引起局部复合中心而没有导致对结构的其他部分(例如在硅/钝化物界面处)的损坏的其他电子。根据一个新颖方面，图1的二极管器件管芯1没有外延硅，没有外延硅到钝化物的界面，没有经受电子照射，并且没有经受从顶侧的离子注入(例如氢离子注入或氦离子注入)。
深离子注入的预期目的是在硅中产生复合中心和电荷载流子陷阱，从而减少电荷载流子的寿命。在深氢注入区域中N-型硅区6中的多数电荷载流子寿命小于三微秒。
浅离子注入的预期目的是降低从底侧P型硅区4直到N-型硅区6的电荷载流子注入效率。通过使用稍微不常见的轻掺杂P型阳极，P型硅区4的电荷载流子注入效率也有所降低。底侧P型硅区4的P型掺杂剂浓度小于8×1017原子/厘米3。因此，与常规的反向二极管相比，P型硅区4进入N-型硅区6中的多数电荷载流子注入效率因此有所降低。该区4的起始材料是非晶体晶片衬底材料的N-型晶片。通过从该晶片的底部进行掺杂来形成底侧P型硅区4。因此，底侧P型硅区4还具有约1×1015原子/厘米3的N型掺杂剂的背景浓度。不存在诸如金或铂的重金属，并且诸如金或铂的重金属在图1的结构中不用作载流子寿命杀手。因此，不经受由于这种重金属原子引起的正向电压降的伴随增加。当图1的快速恢复反向二极管用于高频切换应用时，并且当二极管从正向电压状态中的操作转换到反向阻断(blocking)状态时，存在当PN结处的耗尽区在大小方面增加的时间。为了使二极管在其反向电压状态下开始阻断电流流动，必须去除所谓的二极管恢复电荷(由于在高反向电压状态中耗尽区的扩展)。它只能通过电子和空穴的复合或通过反向恢复电流Ir的流动来去除。不期望有大量值的反向恢复电流Ir。反向恢复电流的最大值表示为Irr。此外，在该反向恢复电流衰减时，它的最大变化率不应太大。浅和深离子注入用于降低电荷的量值(电荷必须从二极管中去除以开始阻断)以及平滑反向恢复电流的浪涌，以使其最大变化率更小。结果，反向恢复时间Trr更小。
图1的反向二极管器件具有至少1800伏的非常高的反向击穿电压。当从正向电压状态转换到约900伏的反向电压状态时，二极管的反向恢复时间Trr约为200纳秒。因此，图1的二极管被称为“快速二极管”或“快速恢复二极管”。在使用二极管器件时，在随时间推移保持其高反向击穿电压能力方面，这在不降低器件的坚固性的情况下实现。图1的二极管即使在高反向电压状态下在150摄氏度下经受HTRB测试1000小时，也保持其1800伏的反向击穿电压。因此，1800伏反向击穿电压被称为“稳定”。
图2是阐述关于图1的快速恢复反向二极管器件的各种部件的各种细节和特性的表。使用离子束设备进行H+深注入。注入剂量为2×1012离子每厘米2。注入深度为110微米。注入剂量相对较低，因此贯穿离子注入工艺，注入期间底部硅表面处的温度有利地是低的。在一个示例中，浅离子注入也是H+离子注入。使用与H+深注入中使用的相同的设备进行该注入。注入剂量为2×1012原子每厘米2。注入深度为35微米。
两个离子注入步骤在顶侧钝化之后以及在顶侧和底侧金属化之后发生。在离子注入之后，将晶片切割、测试、包装、和再次测试。
图3是根据一个新颖方面的制造方法100的流程图。在晶片中形成结构(步骤101)。晶片具有底部半导体表面和顶部半导体表面。晶片的管芯区域具有四个外围侧边缘。该结构包括底侧P型硅区、N-型硅区、N+型硅接触区和P型硅外围侧壁区。管芯区域内的这些半导体区如图1所示。在制造过程中在这点处，晶片没有被切割，也没有被钝化或金属化，但是管芯区域内的结构具有图1所示的结构。接下来，将氢离子注入通过底部半导体表面(步骤102)，以形成上面结合图1描述的深氢离子层。接下来，将离子(氢或氦)注入通过底部半导体表面(步骤103)，以形成上面结合图1描述的浅离子层。在顶部半导体表面上形成钝化层(步骤104)。形成顶侧金属电极和底侧金属电极(步骤105)。然后，切割晶片(步骤106)，使得管芯区域变为反向二极管器件管芯。反向二极管器件管芯具有图1所示的结构。在100的制造方法中，深离子注入可以在浅离子注入之前或之后发生。可以在离子注入步骤之前或之后形成晶片的掺杂区。而且，可以在离子注入步骤之前或之后形成钝化层。而且，金属电极的形成可以在离子注入步骤之前或之后发生。然而，无论离子注入步骤是在钝化步骤之前还是之后发生，在硅/钝化物界面15处都没有通过硅的离子注入。
在另一实施例中，反向二极管管芯具有如上结合图1所述的结构，不同之处在于：1)没有浅离子层，以及2)底侧P型硅区4的P型掺杂剂浓度甚至更轻，小于1×1016原子/厘米3。深氢离子层优选从结构的底侧注入，但在另一示例中，它从结构的顶侧注入。区4的P型硅的轻1×1016原子/厘米3掺杂使区4a成为所谓的“透明发射器(tansparent emitter)”。
在另一实施例中，反向二极管管芯具有如上结合图1所述的结构，不同之处在于：1)没有浅离子层，2)没有深氢离子层，3)底侧P型硅区4的P型掺杂剂浓度甚至更轻，小于1×1016原子/厘米3，4)结构用电子照射。电子具有足够高的能量，使得它们在区6的N-型硅中且遍及区6的N-型硅产生复合位。该结构可以从顶侧或从底侧照射。
在另一实施例中，反向二极管管芯具有如上结合图1所述的结构，不同之处在于：1)没有深氢离子层，以及2)结构用电子照射。电子具有足够高的能量，使得它们在区6的N-型硅中且遍及区6的N-型硅产生复合位。该结构可以从顶侧或从底侧照射。
尽管上面出于指导目的描述了某些特定实施例，但是本专利文献的教导具有普遍适用性，并且不限于上述具体实施例。尽管上面阐述了具有P型硅外围侧壁区9的反向二极管管芯的示例，该P型硅外围侧壁区9一直横向延伸到管芯的四个外围侧边缘，但是在其他实施例中，P型硅外围区不需要一直延伸到管芯侧边缘。在一个示例中，采用了Wisotzki等人于2015年11月20日提交的题为“Trench Separation Diffusion For High VoltageDevice”的美国专利No.9,590,033中阐述的外围隔离结构。图4示出了此结构。附图标记21标识管芯的侧边缘。即使管芯侧边缘的一些部分是N-型硅，沟槽隔离结构也具有P型外围隔离区16，P型外围隔离区16从顶部半导体表面17向下一直延伸到底部半导体表面19处的P型区18。因此，外围P型硅完全横向环绕在N-型中央漂移区20周围。美国专利No.9,590,033的全部主题通过引用并入本文中。因此，在不脱离权利要求中阐述的本发明的范围的情况下，可以实践所描述的实施例的各种特征的各种修改、适配和组合。

Claims (21)

1.一种功率半导体器件管芯，具有顶部半导体表面、底部半导体表面和外围侧边缘，所述管芯包括：
底侧P型硅区，其从所述管芯的底部半导体表面向上延伸，所述底侧P型硅区还横向向外延伸到所述管芯的外围侧边缘，其中，所述底侧P型硅区具有小于8×1017原子/厘米3的P型掺杂剂浓度；
N-型硅区，设置在所述底侧P型硅区上方；
N+型硅接触区，其从所述顶部半导体表面向下延伸并进入所述N-型硅区中；
P型硅外围侧壁区，其从所述管芯的外围侧边缘横向向内延伸并横向环绕所述N-型硅区，其中，所述P型硅外围侧壁区与所述底侧P型硅区相接，从而形成P型隔离结构，其中，所述N-型硅区、所述N+型硅接触区、所述P型硅外围侧壁区和所述底侧P型硅区中的每一个具有体硅晶片材料；
顶侧钝化层，设置在所述管芯的顶部半导体表面的一部分上方，其中，所述顶侧钝化层设置在所述P型硅外围侧壁区上方并环绕在所述N+型硅接触区周围；
深氢离子层，其具有关于氢离子局部浓度峰值表面设置的分布，其中，所述氢离子局部浓度峰值表面是在与所述底部半导体表面平行的平面中延伸的平坦表面，其中，所述氢离子局部浓度峰值表面延伸通过所述N-型硅区，而不延伸通过所述底侧P型硅区；
浅离子层，其具有关于离子局部浓度峰值表面设置的分布，其中，所述离子局部浓度峰值表面是在与所述底部半导体表面平行的平面中延伸的平坦表面，其中，所述离子局部浓度峰值表面延伸通过所述底侧P型硅区，而不延伸通过所述N-型硅区，其中，所述浅离子层的离子是取自由氢离子和氦离子组成的组中的离子；
顶侧金属电极，设置在所述N+型硅接触区上；以及
底侧金属电极，设置在所述管芯的底部半导体表面上。
2.根据权利要求1所述的功率半导体器件管芯，其中，所述底侧P型硅区的P型掺杂剂浓度小于1×1016原子/厘米3。
3.根据权利要求1所述的功率半导体器件管芯，其中，所述半导体器件管芯是具有至少1800伏的反向击穿电压的分立二极管器件。
4.根据权利要求1所述的功率半导体器件管芯，其中，所述顶侧钝化层直接设置在所述顶部半导体表面的所述部分上。
5.一种方法，包括：
(a)在半导体晶片中形成结构，其中，所述晶片具有底部半导体表面和顶部半导体表面，其中，存在所述半导体晶片的管芯区域，其中，所述管芯区域具有四个外围侧边缘，其中，所述结构包括：
底侧P型硅区，其从所述底部半导体表面向上延伸，并且所述底侧P型硅区还横向向外延伸到所述管芯区域的四个外围侧边缘，其中，所述底侧P型硅区具有小于8×1017原子/厘米3的P型掺杂剂浓度；
N-型硅区，设置在所述管芯区域内的底侧P型硅区上方；
N+型硅接触区，其从所述顶部半导体表面向下延伸并进入所述N-型硅区中；以及
P型硅外围侧壁区，其横向环绕所述N-型硅区，其中，所述P型硅外围侧壁区和所述底侧P型硅区一起是从所述顶部半导体表面延伸到所述底部半导体表面的P型隔离结构的部分，其中，所述N-型硅区、所述N+型硅接触区、所述P型硅外围侧壁区和所述底侧P型硅区中的每一个具有体硅晶片材料；
(b)通过所述底部半导体表面对氢离子进行离子注入，使得形成深氢离子层，其中，所述深氢离子层具有关于氢离子局部浓度峰值表面设置的分布，其中，所述氢离子局部浓度峰值表面延伸通过所述N-型硅区，但不延伸通过所述底侧P型硅区；
(c)通过所述底部半导体表面对离子进行离子注入，使得形成浅离子层，其中，所述浅离子层具有关于离子局部浓度峰值表面设置的分布，其中，所述离子局部浓度峰值表面设置在所述深氢离子层与所述底部半导体表面之间，其中，所述浅离子层的离子是取自由氢离子和氦离子组成的组中的离子；
(d)形成顶侧钝化层，使得所述顶侧钝化层设置在所述顶部半导体表面的一部分上方；
(e)形成与所述N+型硅接触区接触的顶侧金属电极；以及
(f)形成与所述底侧P型硅区接触的底侧金属电极。
6.根据权利要求5所述的方法，其中，步骤(b)和步骤(c)在步骤(d)之后进行。
7.根据权利要求5所述的方法，其中，步骤(b)和步骤(c)在步骤(d)之前进行。
8.根据权利要求5所述的方法，其中，步骤(b)和步骤(c)在步骤(f)之后进行。
9.根据权利要求5所述的方法，其中，步骤(b)和步骤(c)在步骤(f)之前进行。
10.根据权利要求5所述的方法，其中，步骤(b)和步骤(c)在步骤(a)之后进行。
11.根据权利要求5所述的方法，其中，步骤(b)和步骤(c)在步骤(a)之前进行。
12.根据权利要求5所述的方法，其中，在(d)中形成所述钝化层之后，一定量的所述顶部半导体表面与钝化层接触，并且其中，没有通过该一定量的顶部半导体表面离子注入氢离子以及氦离子。
13.根据权利要求5所述的方法，其中，所述管芯区域具有单个PN结，并且其中，所述管芯区域不包括二极管之外的其他半导体器件。
14.根据权利要求5所述的方法，其中，所述顶侧钝化层直接设置在所述顶部半导体表面的所述部分上。
15.根据权利要求5所述的方法，其中，没有通过所述顶部半导体表面离子注入氢离子以及氦离子。
16.一种具有顶部半导体表面、底部半导体表面和外围侧边缘的反向二极管管芯，所述管芯包括：
底侧P型硅区，其从所述管芯的底部半导体表面向上延伸，所述底侧P型硅区还横向向外延伸到所述管芯的外围侧边缘，其中，所述底侧P型硅区的中央部分具有小于8×1017原子/厘米3的P型掺杂剂浓度；
N-型硅区，设置在所述底侧P型硅区的中央部分上方；
N+型硅接触区，其从所述顶部半导体表面向下延伸并进入所述N-型硅区中；
P型硅外围隔离区，其从所述顶部半导体表面向下延伸，使得P型硅从所述顶部半导体表面一直向下延伸到所述底部半导体表面，其中，该P型硅形成横向环绕在所述N-型硅区周围的外围隔离结构，其中，所述N-型硅区、所述N+型硅接触区、所述P型硅外围隔离区和所述底侧P型硅区中的每一个具有体硅晶片材料；
顶侧钝化层，设置在所述管芯的顶部半导体表面的一部分上方，其中，所述顶侧钝化层环绕在所述N+型硅接触区周围；
深氢离子层，其具有关于氢离子局部浓度峰值表面设置的分布，其中，所述氢离子局部浓度峰值表面延伸通过所述N-型硅区但不延伸通过所述底侧P型硅区；
浅离子层，其具有关于离子局部浓度峰值表面设置的分布，其中，所述离子局部浓度峰值表面设置在所述深氢离子层与所述底部半导体表面之间，其中，所述浅离子层的离子是取自由氢离子和氦离子组成的组中的离子；
顶侧金属电极，设置在所述N+型硅接触区上；以及
底侧金属电极，设置在所述管芯的底部半导体表面上。
17.根据权利要求16所述的反向二极管管芯，其中，所述管芯的外围侧边缘的硅中的一些是N型硅。
18.根据权利要求16所述的反向二极管管芯，其中，所述管芯的外围侧边缘的硅的任何部分都不是N型硅。
19.根据权利要求16所述的反向二极管管芯，其中，所述底侧P型硅区的中央部分的P型掺杂剂浓度小于1×1016原子/厘米3。
20.根据权利要求16所述的反向二极管管芯，其中，所述反向二极管管芯是具有至少1800伏的反向击穿电压的分立二极管器件。
21.根据权利要求16所述的反向二极管管芯，其中，所述顶侧钝化层直接设置在所述顶部半导体表面的所述部分上。
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