CN109155333B - 一种隧穿晶体管及其制备方法 - Google Patents
一种隧穿晶体管及其制备方法 Download PDFInfo
- Publication number
- CN109155333B CN109155333B CN201680085756.8A CN201680085756A CN109155333B CN 109155333 B CN109155333 B CN 109155333B CN 201680085756 A CN201680085756 A CN 201680085756A CN 109155333 B CN109155333 B CN 109155333B
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- China
- Prior art keywords
- conductive material
- layer
- material layer
- gate dielectric
- heterojunction
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- 230000005641 tunneling Effects 0.000 title claims abstract description 80
- 238000002360 preparation method Methods 0.000 title abstract description 16
- 239000004020 conductor Substances 0.000 claims abstract description 180
- 239000000463 material Substances 0.000 claims abstract description 78
- 239000000758 substrate Substances 0.000 claims description 38
- 238000000034 method Methods 0.000 claims description 33
- 229910052751 metal Inorganic materials 0.000 claims description 30
- 239000002184 metal Substances 0.000 claims description 30
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 9
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- KBPGBEFNGHFRQN-UHFFFAOYSA-N bis(selanylidene)tin Chemical compound [Se]=[Sn]=[Se] KBPGBEFNGHFRQN-UHFFFAOYSA-N 0.000 claims description 3
- ROUIDRHELGULJS-UHFFFAOYSA-N bis(selanylidene)tungsten Chemical compound [Se]=[W]=[Se] ROUIDRHELGULJS-UHFFFAOYSA-N 0.000 claims description 3
- HITXEXPSQXNMAN-UHFFFAOYSA-N bis(tellanylidene)molybdenum Chemical compound [Te]=[Mo]=[Te] HITXEXPSQXNMAN-UHFFFAOYSA-N 0.000 claims description 3
- 230000007547 defect Effects 0.000 abstract description 7
- 230000004888 barrier function Effects 0.000 abstract description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 31
- 230000008569 process Effects 0.000 description 15
- 238000000231 atomic layer deposition Methods 0.000 description 10
- 238000002955 isolation Methods 0.000 description 10
- 229910003090 WSe2 Inorganic materials 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- 238000001704 evaporation Methods 0.000 description 7
- 238000001259 photo etching Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000008020 evaporation Effects 0.000 description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 229910016021 MoTe2 Inorganic materials 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2016/106986 WO2018094619A1 (fr) | 2016-11-23 | 2016-11-23 | Transistor à effet tunnel et son procédé de préparation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109155333A CN109155333A (zh) | 2019-01-04 |
| CN109155333B true CN109155333B (zh) | 2022-06-14 |
Family
ID=62194524
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201680085756.8A Active CN109155333B (zh) | 2016-11-23 | 2016-11-23 | 一种隧穿晶体管及其制备方法 |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN109155333B (fr) |
| WO (1) | WO2018094619A1 (fr) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103026491B (zh) * | 2010-07-06 | 2016-03-02 | 香港科技大学 | 常关断型三族氮化物金属-二维电子气隧穿结场效应晶体管 |
| KR101919425B1 (ko) * | 2012-10-09 | 2018-11-19 | 삼성전자주식회사 | 그래핀 채널을 포함한 터널링 전계효과 트랜지스터 |
| CN103579324B (zh) * | 2013-11-18 | 2016-04-06 | 北京大学 | 一种三面源隧穿场效应晶体管及其制备方法 |
| US10504721B2 (en) * | 2015-04-30 | 2019-12-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Staggered-type tunneling field effect transistor |
| CN105742345A (zh) * | 2016-03-09 | 2016-07-06 | 复旦大学 | 一种隧穿场效应晶体管及其制备方法 |
-
2016
- 2016-11-23 WO PCT/CN2016/106986 patent/WO2018094619A1/fr active Application Filing
- 2016-11-23 CN CN201680085756.8A patent/CN109155333B/zh active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN109155333A (zh) | 2019-01-04 |
| WO2018094619A1 (fr) | 2018-05-31 |
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| GR01 | Patent grant | ||
| GR01 | Patent grant |