CN109155228B - 用于生产晶片的离子注入系统的能量过滤元件 - Google Patents

用于生产晶片的离子注入系统的能量过滤元件 Download PDF

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Publication number
CN109155228B
CN109155228B CN201780029666.1A CN201780029666A CN109155228B CN 109155228 B CN109155228 B CN 109155228B CN 201780029666 A CN201780029666 A CN 201780029666A CN 109155228 B CN109155228 B CN 109155228B
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Prior art keywords
filter
substrate
energy
ion beam
wafer
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Chinese (zh)
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CN109155228A (zh
Inventor
弗洛里安·克里彭多夫
康斯坦丁·科萨托
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MI2 Factory GmbH
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MI2 Factory GmbH
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/05—Electron or ion-optical arrangements for separating electrons or ions according to their energy or mass
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/02—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diaphragms, collimators
    • G21K1/025—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diaphragms, collimators using multiple collimators, e.g. Bucky screens; other devices for eliminating undesired or dispersed radiation
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/10—Scattering devices; Absorbing devices; Ionising radiation filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1472—Deflecting along given lines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H01J37/3172—Maskless patterned ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/002—Cooling arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/047—Changing particle velocity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/047—Changing particle velocity
    • H01J2237/0475—Changing particle velocity decelerating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/05—Arrangements for energy or mass analysis
    • H01J2237/057—Energy or mass filtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H01J2237/31705—Impurity or contaminant control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H01J2237/31706—Ion implantation characterised by the area treated
    • H01J2237/3171—Ion implantation characterised by the area treated patterned
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H01J2237/31706—Ion implantation characterised by the area treated
    • H01J2237/3171—Ion implantation characterised by the area treated patterned
    • H01J2237/31711—Ion implantation characterised by the area treated patterned using mask

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Physical Vapour Deposition (AREA)
  • Element Separation (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
CN201780029666.1A 2016-04-04 2017-04-04 用于生产晶片的离子注入系统的能量过滤元件 Active CN109155228B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202110225252.4A CN113035676B (zh) 2016-04-04 2017-04-04 用于生产晶片的离子注入系统的能量过滤元件

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102016106119.0A DE102016106119B4 (de) 2016-04-04 2016-04-04 Energiefilterelement für Ionenimplantationsanlagen für den Einsatz in der Produktion von Wafern
DE102016106119.0 2016-04-04
PCT/EP2017/058018 WO2017174597A1 (de) 2016-04-04 2017-04-04 Energiefilterelement für ionenimplantationsanlagen für den einsatz in der produktion von wafern

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CN202110225252.4A Division CN113035676B (zh) 2016-04-04 2017-04-04 用于生产晶片的离子注入系统的能量过滤元件

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CN109155228A CN109155228A (zh) 2019-01-04
CN109155228B true CN109155228B (zh) 2021-10-01

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US (5) US10847338B2 (enExample)
EP (4) EP3440690B1 (enExample)
JP (5) JP6831133B2 (enExample)
CN (2) CN109155228B (enExample)
DE (1) DE102016106119B4 (enExample)
WO (1) WO2017174597A1 (enExample)

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DE102019120623B4 (de) * 2019-07-31 2024-01-25 mi2-factory GmbH Energiefilter zur Verwendung bei der Implantation von Ionen in ein Substrat
LU101808B1 (en) * 2020-05-15 2021-11-15 Mi2 Factory Gmbh An ion implantation device comprising energy filter and additional heating element
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Also Published As

Publication number Publication date
CN109155228A (zh) 2019-01-04
US20190122850A1 (en) 2019-04-25
EP4546375A3 (de) 2025-08-13
US20220020556A1 (en) 2022-01-20
WO2017174597A1 (de) 2017-10-12
EP3926658A3 (de) 2022-05-11
US11837430B2 (en) 2023-12-05
EP4553855A2 (de) 2025-05-14
JP2023181414A (ja) 2023-12-21
JP2022174091A (ja) 2022-11-22
CN113035676A (zh) 2021-06-25
JP2021073647A (ja) 2021-05-13
US11183358B2 (en) 2021-11-23
JP6831133B2 (ja) 2021-02-17
EP3440690A1 (de) 2019-02-13
US20210027975A1 (en) 2021-01-28
US10847338B2 (en) 2020-11-24
CN113035676B (zh) 2025-02-11
JP2025000985A (ja) 2025-01-07
JP7572751B2 (ja) 2024-10-24
EP3926658A2 (de) 2021-12-22
EP4553855A3 (de) 2025-08-27
JP7134508B2 (ja) 2022-09-12
EP4546375A2 (de) 2025-04-30
DE102016106119A1 (de) 2017-10-05
US12080510B2 (en) 2024-09-03
US20240055217A1 (en) 2024-02-15
EP3440690B1 (de) 2021-08-11
JP7384480B2 (ja) 2023-11-21
DE102016106119B4 (de) 2019-03-07
JP2019522326A (ja) 2019-08-08
EP3926658B1 (de) 2025-06-04
US20250014854A1 (en) 2025-01-09
EP3926658C0 (de) 2025-06-04

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