JP6831133B2 - ウェハの製造に使用されるイオン注入システムのためのエネルギーフィルタ要素 - Google Patents
ウェハの製造に使用されるイオン注入システムのためのエネルギーフィルタ要素 Download PDFInfo
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- JP6831133B2 JP6831133B2 JP2019502159A JP2019502159A JP6831133B2 JP 6831133 B2 JP6831133 B2 JP 6831133B2 JP 2019502159 A JP2019502159 A JP 2019502159A JP 2019502159 A JP2019502159 A JP 2019502159A JP 6831133 B2 JP6831133 B2 JP 6831133B2
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/05—Electron or ion-optical arrangements for separating electrons or ions according to their energy or mass
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/02—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diaphragms, collimators
- G21K1/025—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diaphragms, collimators using multiple collimators, e.g. Bucky screens; other devices for eliminating undesired or dispersed radiation
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/10—Scattering devices; Absorbing devices; Ionising radiation filters
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- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
- H01J37/1472—Deflecting along given lines
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- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
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- H01J37/3002—Details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
- H01J37/3172—Maskless patterned ion implantation
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
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- H01J2237/002—Cooling arrangements
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- H—ELECTRICITY
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- H01J2237/0475—Changing particle velocity decelerating
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/05—Arrangements for energy or mass analysis
- H01J2237/057—Energy or mass filtering
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- H—ELECTRICITY
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- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31701—Ion implantation
- H01J2237/31705—Impurity or contaminant control
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- H—ELECTRICITY
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- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31701—Ion implantation
- H01J2237/31706—Ion implantation characterised by the area treated
- H01J2237/3171—Ion implantation characterised by the area treated patterned
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31701—Ion implantation
- H01J2237/31706—Ion implantation characterised by the area treated
- H01J2237/3171—Ion implantation characterised by the area treated patterned
- H01J2237/31711—Ion implantation characterised by the area treated patterned using mask
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Physical Vapour Deposition (AREA)
- Element Separation (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102016106119.0A DE102016106119B4 (de) | 2016-04-04 | 2016-04-04 | Energiefilterelement für Ionenimplantationsanlagen für den Einsatz in der Produktion von Wafern |
| DE102016106119.0 | 2016-04-04 | ||
| PCT/EP2017/058018 WO2017174597A1 (de) | 2016-04-04 | 2017-04-04 | Energiefilterelement für ionenimplantationsanlagen für den einsatz in der produktion von wafern |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021003936A Division JP7134508B2 (ja) | 2016-04-04 | 2021-01-14 | ウェハの製造に使用されるイオン注入システムのためのエネルギーフィルタ要素 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019522326A JP2019522326A (ja) | 2019-08-08 |
| JP2019522326A5 JP2019522326A5 (enExample) | 2020-09-17 |
| JP6831133B2 true JP6831133B2 (ja) | 2021-02-17 |
Family
ID=58544919
Family Applications (5)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019502159A Active JP6831133B2 (ja) | 2016-04-04 | 2017-04-04 | ウェハの製造に使用されるイオン注入システムのためのエネルギーフィルタ要素 |
| JP2021003936A Active JP7134508B2 (ja) | 2016-04-04 | 2021-01-14 | ウェハの製造に使用されるイオン注入システムのためのエネルギーフィルタ要素 |
| JP2022132936A Active JP7384480B2 (ja) | 2016-04-04 | 2022-08-24 | ウェハの製造に使用されるイオン注入システムのためのエネルギーフィルタ要素 |
| JP2023187393A Active JP7572751B2 (ja) | 2016-04-04 | 2023-11-01 | ウェハの製造に使用されるイオン注入システムのためのエネルギーフィルタ要素 |
| JP2024174677A Pending JP2025000985A (ja) | 2016-04-04 | 2024-10-04 | ウェハの製造に使用されるイオン注入システムのためのエネルギーフィルタ要素 |
Family Applications After (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021003936A Active JP7134508B2 (ja) | 2016-04-04 | 2021-01-14 | ウェハの製造に使用されるイオン注入システムのためのエネルギーフィルタ要素 |
| JP2022132936A Active JP7384480B2 (ja) | 2016-04-04 | 2022-08-24 | ウェハの製造に使用されるイオン注入システムのためのエネルギーフィルタ要素 |
| JP2023187393A Active JP7572751B2 (ja) | 2016-04-04 | 2023-11-01 | ウェハの製造に使用されるイオン注入システムのためのエネルギーフィルタ要素 |
| JP2024174677A Pending JP2025000985A (ja) | 2016-04-04 | 2024-10-04 | ウェハの製造に使用されるイオン注入システムのためのエネルギーフィルタ要素 |
Country Status (6)
| Country | Link |
|---|---|
| US (5) | US10847338B2 (enExample) |
| EP (4) | EP3440690B1 (enExample) |
| JP (5) | JP6831133B2 (enExample) |
| CN (2) | CN109155228B (enExample) |
| DE (1) | DE102016106119B4 (enExample) |
| WO (1) | WO2017174597A1 (enExample) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102016106119B4 (de) | 2016-04-04 | 2019-03-07 | mi2-factory GmbH | Energiefilterelement für Ionenimplantationsanlagen für den Einsatz in der Produktion von Wafern |
| DE102016122791B3 (de) * | 2016-11-25 | 2018-05-30 | mi2-factory GmbH | Ionenimplantationsanlage, Filterkammer und Implantationsverfahren unter Einsatz eines Energiefilterelements |
| US11051390B2 (en) * | 2017-03-22 | 2021-06-29 | Japan Atomic Energy Agency | Functional membrane for ion beam transmission, beam line device and filter device each having the same, and method of adjusting filter device |
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