200839229 九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種半導體製造領域，且特別是有關 於一種離子植入機的三維離子束束形的偵測方法。 【先前技術】 在半導體製造技術中，離子植入技術已經廣泛使用於 將雜質摻雜入半導體中。離子植入技術的設備主要為離子 植入機，離子植入機所產生的離子束，利用掃描裝置對整 片晶圓進行摻雜。 由於離子束是一條線狀的粒子，因此，離子束射入晶 圓的入射角（Incident Angle)、射束發散度（beam divergence) 等因素，對於被植入之先進元件電性特性存在著一定程度 的影響。因此，離子植入機必須對前述的影響因素進行偵 測與分析，以提高製程的要求。 明參照第1圖，係為現有的離子植入機之晶圓承載裝 置與偵測離子束的法拉第杯（FaradayCup)接收器之示意I 體圖。現有的離子植入機之晶圓承載裝置5〇〇上具有一法 拉第杯（Faraday Cup)接收器501。法拉第杯接收器5〇1是 現有應用於偵測離子束性質以進行分析的裝置之一。晶圓 在進行離子植入之前，必須以法拉第杯接收器5〇1量測離 子束電流（Ion beam current)，以確保離子束性質參數，如 均勻度（Uniformity)與束流密度等性質是否符合生產規格。 請進-步參照第2圖與第3圖所示，藉由傳動設備(如 5 200839229 機械手臂）沿X軸與γ軸 拉第杯接收器5G1 D多動晶圓承載裝置500使法 中，虛線方塊中之箭頭 7 Y軸方向移動（如第2圖 Ρ时蝴資料（如第3 得到關於離子束束形（b隨 響因素。 ）進而去分析前述所需的影 由於現有的偵測方法所 i 料，都為二維㈣平面上:二：的：於離子㈣ 的不足。又隨著先進製程IS要:::::办^ 影響因素，如離子束的^ Γ 對於某些 旦1… 角、射束發散度等的些微變異 ’更加地敏感。現有的二維資料已經無法提供足狗的 2以準確齡析如㈣束〜㈣、射束錄度等影Ϊ ，、因此’如何提供更充足的分析資料，實在是-個刻 不谷緩的問題。 【發明内容】 本發明的目的在提供一種離子植入機之三 束形的偵測方法，用以偵測離子束的三度空間束形（3_D beam profile)，以分析取得關於該離子束的束形參數。 依照本發明之一種離子植入機之三維離子束束形的 偵測方法’係偵測離子植入機所提供的一離子束。離子束 的偵測係使用一偵測器，如法拉第杯（Faraday Cup)。 利用偵測器偵測該離子束的複數掃描面以及各該掃 描面的一關於該離子束的二維束形資料後，將該些掃描面 豐合’並形成一三維掃描空間，使該些二維束形資料疊合 6 200839229 分析該三維束形200839229 IX. Description of the Invention: [Technical Field] The present invention relates to the field of semiconductor fabrication, and more particularly to a method for detecting a three-dimensional ion beam shape of an ion implanter. [Prior Art] In semiconductor manufacturing technology, ion implantation technology has been widely used for doping impurities into semiconductors. The equipment of ion implantation technology is mainly an ion beam implanter, an ion beam generated by an ion implanter, and a whole wafer is doped by a scanning device. Since the ion beam is a linear particle, the incident angle (incident angle) and beam divergence of the ion beam incident on the wafer are certain for the electrical characteristics of the advanced component to be implanted. The extent of the impact. Therefore, the ion implanter must detect and analyze the aforementioned influencing factors to improve the process requirements. Referring to Fig. 1, there is shown a schematic diagram of a conventional wafer carrier of an ion implanter and a FaradayCup receiver for detecting an ion beam. The wafer carrier device 5 of the existing ion implanter has a Faraday Cup receiver 501. The Faraday cup receiver 5〇1 is one of the devices currently used to detect ion beam properties for analysis. Before the wafer is ion implanted, the Ion beam current must be measured with the Faraday cup receiver 5〇1 to ensure that the ion beam property parameters, such as uniformity (uniformity) and beam density, are consistent. Production specifications. Please refer to Figures 2 and 3, as shown in Figures 2 and 3, by means of a transmission device (e.g., 5 200839229 robotic arm) pulling the cup receiver 5G1 D on the X-axis and the γ-axis to move the wafer carrier device 500. The arrow 7 in the dotted square moves in the Y-axis direction (as in Figure 2, the data is obtained (for example, the third is about the ion beam shape (b with the ringing factor)) and then analyzes the required shadow due to the existing detection method. The materials are all on the two-dimensional (four) plane: two: the deficiency of the ion (four). With the advanced process IS::::: do ^ influence factors, such as ion beam ^ Γ for some denier 1 ... slight variations in angle, beam divergence, etc. are more sensitive. Existing 2D data can no longer provide accurate analysis of the foot dog 2 such as (four) beam ~ (four), beam recording, etc., therefore 'how to Providing more sufficient analysis data is really a problem that is not slow. [Invention] The object of the present invention is to provide a three-beam detection method for an ion implanter for detecting three ion beams. A beam shape (3_D beam profile) for analysis to obtain beam shape parameters for the ion beam The method for detecting a three-dimensional ion beam shape of an ion implanter according to the present invention detects an ion beam provided by an ion implanter. The detection of the ion beam uses a detector such as a Faraday cup. (Faraday Cup). Using a detector to detect the complex scanning surface of the ion beam and a two-dimensional beam shape data of the ion beam on the scanning surface, the scanning surfaces are summed together and form a three-dimensional scan. Space, so that the two-dimensional beam data overlap 6 200839229 analyze the three-dimensional beam shape
形成-關於該離子束的三維束形資料。 料，以取得關於該離子束的束形參數。 藉此，本發明所能達成的功效在於： :供了，種關於該離子束的三維束形資料。三維束形 貝…以提供足夠與充分的資料，以進行離子束的束形分 析，以取得關於離子束的束形參數，如人㈣、射束發散 Γ 度，及離子束局部之變化情況等。可提高離子植入製程的 生產規格，符合先進製程的要求。 【實施方式】 請參照第4a圖、第4b圖以及第5圖所示，依據本發 明-實施例的一種離子植入機之三維離子束束形的㈣ 方法’制貞測離子植人機所提供的—離子束（如第如圖 中，大黑色箭頭所示）。使用—電學_器以偵測離子束， 本實施例中，該電學偵測器係為一法拉第杯(Fa— Cup)。 該電學摘測器沿-掃描路徑11〇移動，於與離子束相 交的截面形成-掃描面100’掃描路徑11〇係分別沿垂直 相又的f ϋ向與-第二軸向進行。在本實施例中，第 一轴向為X軸，第二軸向為ζ軸。 母荽元成個離子束的掃描面100偵測後，沿一第三 軸向移動該電學偵測器。在本實施例中，第三軸向為丫軸， 該電學4貞測ϋ並沿Υ軸等間距移動。藉此，可完成複數離 子束的掃描面100，並取得每一掃描面1〇〇上關於該離子 束的二維束形資料（如步驟400所示）。在本實施例中，掃 7 200839229 描面U)0的數量可界於5到10個範圍之間。相鄰的掃描 面100間具有一等間距，該等間距為約i公分或2公分。 接著，疊合該些掃描面100，使於一個三維掃描空間 200中，璺合二維束形資料形成三維束形資料3〇〇(如第仆 • 圖以及步驟410、420所示）。即可分析該三維束形資料 • 300,以取得關於該離子束的束形參數。束形參數，如離 子束的入射角、離子束的射束發散度（beam divergence)、 C 束形中心變化、束形重心變化等。在本實施例中，該三維 束形資料300係為一三維束形曲面，藉此可分析關於離子 束的入射角310、束形中心變化、束形重心變化等束形參 數。上述所揭露的束形參數，僅為例示說明，並非用以限 定本發明。 雖然本發明已以一較佳實施例揭露如上，然其並非用 乂限疋本發明，任何熟習此技藝者，在不脫離本發明之精 神和範圍内，當可作各種之更動與潤飾，因此本發明之保 [： 遵乾圍當視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 為讓本發明之上述和其他目的、特徵、優點與實施例 月匕更明顯易懂，所附圖式之詳細說明如下： 第1圖係為現有的離子植入機之晶圓承載裝置與偵測 離子束的法拉第杯（Faraday Cup)接收器之示意立體圖。 第2圖係現有偵測離子束束形資料的示意圖。 200839229 =3圖係現有二維束形資料的示意圖。 圖到第4b圖係依據本發明—實施例之偵測三維 離子束束形資料的示意流程圖。 第5圖係依據本發明一實施例的—種離子植入機的離 子束束形的偵測方法的流程圖。 【主要元件符號說明】 1〇〇 :掃描面 200 ··三維掃描空間 400 :步驟 420 :步驟 501 :法拉第杯接收器 110 ·知插路握 300 :三維束形資料 310 :入射角 410 :步驟 500:晶圓承载裝置Forming - three-dimensional beam shape data about the ion beam. Material to obtain beam shape parameters for the ion beam. Thereby, the effect that can be achieved by the present invention is that: a three-dimensional beam shape data about the ion beam is supplied. Three-dimensional beam-shaped... to provide sufficient and sufficient data for beam shape analysis of the ion beam to obtain beam shape parameters for the ion beam, such as human (4), beam divergence, and local changes in the ion beam. . It can improve the production specifications of the ion implantation process and meet the requirements of advanced processes. [Embodiment] Referring to FIG. 4a, FIG. 4b, and FIG. 5, a three-dimensional ion beam beam shape (fourth method) of an ion implanter according to the present invention is a method for measuring an ion implanting machine. Provided - ion beam (as indicated by the large black arrow in the figure). The electron detector is used to detect the ion beam. In this embodiment, the electrical detector is a Fara Cup. The electrical pick-up moves along the -scanning path 11〇, forming a cross-section with the ion beam-scanning surface 100', and the scanning path 11 is carried out along the vertical direction and the second axial direction, respectively. In this embodiment, the first axis is the X axis and the second axis is the ζ axis. After the mother cell is detected by the scanning surface 100 of the ion beam, the electrical detector is moved along a third axis. In the present embodiment, the third axial direction is a 丫 axis, and the electrical 贞 is measured and moved at equal intervals along the Υ axis. Thereby, the scanning surface 100 of the plurality of ion beams can be completed, and the two-dimensional beam data about the ion beam on each scanning surface 1 is obtained (as shown in step 400). In the present embodiment, the number of scans U)0 can be between 5 and 10 ranges. Adjacent scanning faces 100 have an equidistant spacing of about i centimeters or 2 centimeters. Then, the scanning planes 100 are superimposed to form a three-dimensional beam-shaped data in a three-dimensional scanning space 200 to form three-dimensional beam-shaped data (as shown in the first servant diagram and steps 410 and 420). The three-dimensional beam data • 300 can be analyzed to obtain beam shape parameters for the ion beam. Beam shape parameters, such as the incident angle of the ion beam, the beam divergence of the ion beam, the change in the center of the C beam, and the change in the center of gravity of the beam. In the present embodiment, the three-dimensional beam-shaped data 300 is a three-dimensional beam-shaped curved surface, whereby beam-shaped parameters such as the incident angle 310 of the ion beam, the beam shape center change, and the beam-shaped center of gravity change can be analyzed. The beam shape parameters disclosed above are for illustrative purposes only and are not intended to limit the invention. Although the present invention has been described above in terms of a preferred embodiment, it is not intended to be limited to the present invention, and various modifications and changes can be made without departing from the spirit and scope of the invention. The warranty of the present invention is as defined in the scope of the patent application attached to the company. BRIEF DESCRIPTION OF THE DRAWINGS In order to make the above and other objects, features, advantages and embodiments of the present invention more comprehensible, the detailed description of the drawings is as follows: Figure 1 is a prior art ion implanter A schematic perspective view of a wafer carrier and a Faraday Cup receiver that detects an ion beam. Figure 2 is a schematic diagram of the existing detected ion beam beam shape data. 200839229 = 3 is a schematic diagram of the existing two-dimensional beam data. Figure 4b is a schematic flow diagram of detecting three-dimensional ion beam beam shape data in accordance with the present invention. Fig. 5 is a flow chart showing a method of detecting an ion beam shape of an ion implanter according to an embodiment of the present invention. [Description of main component symbols] 1〇〇: scanning surface 200··3D scanning space 400: Step 420: Step 501: Faraday cup receiver 110 • Knowing the insertion grip 300: Three-dimensional beam data 310: Incident angle 410: Step 500 : Wafer carrier