KR890017790A - 이온 주입량의 측정 방법 및 장치 - Google Patents

이온 주입량의 측정 방법 및 장치 Download PDF

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Publication number
KR890017790A
KR890017790A KR1019890005891A KR890005891A KR890017790A KR 890017790 A KR890017790 A KR 890017790A KR 1019890005891 A KR1019890005891 A KR 1019890005891A KR 890005891 A KR890005891 A KR 890005891A KR 890017790 A KR890017790 A KR 890017790A
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South Korea
Prior art keywords
photoluminescence
implantation
wafer
ion implantation
mapping
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KR1019890005891A
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English (en)
Inventor
미하일 키리로프 디미트리
알란 포웰 로날드
비바스 앨버트
비.펠츠 수잔
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스탠리 젯.코울
배리언 어소시에이츠 인코포레이티드
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Publication of KR890017790A publication Critical patent/KR890017790A/ko

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Health & Medical Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Biochemistry (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Electron Sources, Ion Sources (AREA)

Abstract

내용 없음

Description

이온 주입량의 측정 방법 및 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1 도는 주입전과 주입 및 활성화 이닐링 이후에 광루미네슨스 강도를 측정하고 맵(map)하기 위해 사용된 장치도. 제 2 도는 저농동(1×109cm-2)및 중간농도(5×1011cm-2)의 100keV29Si+를 GaAs내로 주입시킴으로써 야기되는 광루미네슨스의 억제를 나타낸 도면. 제10도는 본 발명에 따른 실시간 주입 모니터의 다이어그램.

Claims (6)

  1. 이온 주입량의 균일성을 맵하는 방법에 있어서, (a) 주입 이전에 반도체 웨이퍼의 광루미네슨스 강도를 맵하는 단계 (b) 이온 주입후에 동일한 반도체 웨이퍼의 광루미네슨스 강도를 맵하는 단계 및 (c) 이온 주입 및 이온 주입후에 광루미네슨스의 측정 결과를 비교함으로써 이온 주입 맵을 계산하는 단계를 구비하는 것을 특징으로 하는 이온 주입량의 균일성을 맵하는 방법.
  2. 제 1 항에 있어서, (d) 웨이퍼를 아닐링 하는 단계 (e) 불순물의 전기적 활성화를 위해 주입전에 아닐링을 행한 후 동일한 반도체 웨이퍼의 광루미네슨스 강도를 맵하는 단계 및 (f) 주입전과, 주입 및 활성화 이후에 광루미네슨스의 측정 결과를 비교함으로써 아닐링 되기전의 이온 주입 맵을 계산하는 단계를 부가적으로 구비하는 것을 특징으로 하는 이온 주입량의 균일성을 맵하는 방법.
  3. 제 2 항에 있어서, (a) 및 (e)의 맵 단계는 레이저로써 광루미네슨스를 여기시킴으로써 수행되는 것을 특징으로 하는, 이온 주입량의 균일성을 맵하는 방법.
  4. 실리콘 웨이퍼에 이온을 주입하는 이온 주입기에서 시간에 따른 빔의 강도 및 주입량을 모니터 하는 방법에 있어서, (a) 주입될 실리콘 웨이퍼에 GaAs 웨이퍼를 포함하는 단계 (b) 실리콘 웨이퍼 및 GaAs 웨이퍼 위에서 소정의 패턴으로 주입 빔을 주사하는 단계 (c) GaAs 웨이퍼의 주사시간 사이에, 광루미네슨스의 여기를 위해 GaAS 웨이퍼를 투광하는 단계 (d) 광루미네슨스를 측정하는 단계 및 (e) 광루미네슨스 측정 신호를 예상 신호와 비교함으로써 차 신호를 유도하는 단계를 포함하는 것을 특징으로 하는, 빔의 강도 및 주입량을 모니터 하는 방법.
  5. 제 4 항에 있어서, (f)상기 차 신호가 프리세트된 한계를 초과하는 경우 주입을 중지시키는 단계를 또한 포함하는 것을 특징으로 하는, 빔의 강도 및 주입량을 모니터 하는 방법.
  6. 실리콘 웨이퍼를 이온 주입하는 이온 주입기에서 시간에 따른 빔의 강도를 모니터 하는 장치에 있어서, 주입될 위치에서 실리콘 웨이퍼에 작은 GaAs 웨이퍼를 유지하는 수단, GaAs 웨이퍼로부터 광루미네슨스를 여기시키는 수단, GaAs 웨이퍼로부터 광루미센슨스를 검출하며 광푸미네슨스에 비례하는 검출신호를 유도하는 수단, 상기 검출 신호를, 예측하는 검출 신호와 비교하여 차 신호를 유도해내는 컴퓨터 수단 및 상기 창신호가 프리세트된 한계를 초과할때 주입을 중지시키는 컴퓨터 수단을 구비하는 것을 특징으로 하는, 시간에 따른 빔의 강도를 모니터 하는 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890005891A 1988-05-03 1989-05-02 이온 주입량의 측정 방법 및 장치 KR890017790A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US18956288A 1988-05-03 1988-05-03
US189562 1994-01-31

Publications (1)

Publication Number Publication Date
KR890017790A true KR890017790A (ko) 1989-12-18

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KR1019890005891A KR890017790A (ko) 1988-05-03 1989-05-02 이온 주입량의 측정 방법 및 장치

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JP (1) JPH0216726A (ko)
KR (1) KR890017790A (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6828204B2 (en) * 2002-10-16 2004-12-07 Varian Semiconductor Equipment Associates, Inc. Method and system for compensating for anneal non-uniformities
JP2015185811A (ja) * 2014-03-26 2015-10-22 信越半導体株式会社 半導体基板の評価方法
JP6458612B2 (ja) * 2015-04-10 2019-01-30 株式会社Sumco 半導体ウェーハの製造方法および半導体ウェーハの評価方法
DE102016106119B4 (de) * 2016-04-04 2019-03-07 mi2-factory GmbH Energiefilterelement für Ionenimplantationsanlagen für den Einsatz in der Produktion von Wafern
JP7216387B2 (ja) * 2018-01-09 2023-02-01 学校法人立命館 電流狭窄型高出力縦型ヘテロ接合ｆｅｔを製造する方法および装置

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