JP7004346B2 - ウェハにイオンを注入するための方法および装置 - Google Patents
ウェハにイオンを注入するための方法および装置 Download PDFInfo
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- 150000002500 ions Chemical class 0.000 title description 17
- 238000000034 method Methods 0.000 title description 7
- 238000010884 ion-beam technique Methods 0.000 claims description 47
- 238000002347 injection Methods 0.000 claims description 46
- 239000007924 injection Substances 0.000 claims description 46
- 235000012431 wafers Nutrition 0.000 description 87
- 230000007547 defect Effects 0.000 description 40
- 239000000758 substrate Substances 0.000 description 20
- 238000005468 ion implantation Methods 0.000 description 15
- 239000000463 material Substances 0.000 description 12
- 238000009826 distribution Methods 0.000 description 9
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 9
- 125000004429 atom Chemical group 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 229910010271 silicon carbide Inorganic materials 0.000 description 8
- 239000012528 membrane Substances 0.000 description 6
- 239000002245 particle Substances 0.000 description 5
- 230000004913 activation Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000001678 irradiating effect Effects 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 125000005842 heteroatom Chemical group 0.000 description 3
- 230000008439 repair process Effects 0.000 description 3
- 239000000725 suspension Substances 0.000 description 3
- 230000001360 synchronised effect Effects 0.000 description 3
- 229910003327 LiNbO3 Inorganic materials 0.000 description 2
- 239000003570 air Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- MYWUZJCMWCOHBA-VIFPVBQESA-N methamphetamine Chemical compound CN[C@@H](C)CC1=CC=CC=C1 MYWUZJCMWCOHBA-VIFPVBQESA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 238000009423 ventilation Methods 0.000 description 2
- 241000212384 Bifora Species 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 241001596291 Namibia Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000012080 ambient air Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000035876 healing Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/05—Electron or ion-optical arrangements for separating electrons or ions according to their energy or mass
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
- H01J37/1472—Deflecting along given lines
- H01J37/1474—Scanning means
- H01J37/1477—Scanning means electrostatic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/20—Means for supporting or positioning the objects or the material; Means for adjusting diaphragms or lenses associated with the support
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- H—ELECTRICITY
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
-
- H—ELECTRICITY
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- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
- H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/024—Moving components not otherwise provided for
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/045—Diaphragms
- H01J2237/0456—Supports
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/047—Changing particle velocity
- H01J2237/0475—Changing particle velocity decelerating
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- H—ELECTRICITY
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- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
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- H01J2237/057—Energy or mass filtering
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- H—ELECTRICITY
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- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/15—Means for deflecting or directing discharge
- H01J2237/151—Electrostatic means
- H01J2237/1518—Electrostatic means for X-Y scanning
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- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/202—Movement
- H01J2237/20214—Rotation
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- H01J2237/317—Processing objects on a microscale
- H01J2237/31701—Ion implantation
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- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31701—Ion implantation
- H01J2237/31705—Impurity or contaminant control
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31701—Ion implantation
- H01J2237/31706—Ion implantation characterised by the area treated
- H01J2237/3171—Ion implantation characterised by the area treated patterned
- H01J2237/31711—Ion implantation characterised by the area treated patterned using mask
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- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
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- H01J2237/317—Processing objects on a microscale
- H01J2237/31701—Ion implantation
- H01J2237/31706—Ion implantation characterised by the area treated
- H01J2237/3171—Ion implantation characterised by the area treated patterned
- H01J2237/31713—Focused ion beam
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- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
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Description
Science、184(2001)、307-316;C.A.Fisherら:第11回炭化ケイ素および関連材料に関する欧州会議,2016年9月,ギリシャ,ハルキディ,抄録集;N.S.Saksら:Applied Physics Letters
84,5195(2004);doi 10.1063/1.1764934を参照のこと。
3 第1のイオン
4 第2のイオン
6 注入フィルタ
8 ウェハ
10 矩形(フィルタ付き)
12 ガウス分布(フィルタなし)
13 注入室
14 ビームラインインサート
15 ビーム開口
16 サスペンション
18 フィルタ膜
20 ウェハホイール
22 欠陥プロファイルのうねり
24 合計効果による減少
26 エネルギーフィルタとイオンビーム間のy方向の同期振動運動
28 イオンビームのz方向の振動運動
32 エネルギーフィルタの活性面
34 フィルタユニットとイオンビームの可変振動運動
36 フィルタ室
38 第1の真空弁
39 真空状態
40 第2の真空弁
41 真空ポンプシステム
42 ウェハ室
44 フィルタホルダー
45 ウェハチャック
46 注入イオン濃度
48 左軸
50 右軸
52 低温注入欠陥濃度
54 高温注入欠陥濃度
56 範囲外欠陥
58 範囲内欠陥
Claims (8)
- 少なくとも1つのウェハ(8)を保持するように構成されたウェハホルダ(20、45)を有するウェハ室(42)と、
フィルタホルダ(44)ならびに第1および第2の閉鎖可能な開口部を有するフィルタ室(36)と、を備える装置。 - 前記第1および第2の閉鎖可能な開口部はそれぞれ、気密に密閉可能であることを特徴とする請求項1に記載の装置。
- 前記フィルタホルダ(44)が少なくとも1つの方向に移動可能であることを特徴とする請求項1に記載の装置。
- 前記フィルタホルダ(44)が、前記第1および第2の開口部の一方を越えて前記フィルタ室(36)の外へ移動可能であることを特徴とする請求項3に記載の装置。
- 前記フィルタ室(36)が、前記ウェハ室(42)の内側に配置されていることを特徴とする請求項1に記載の装置。
- 前記フィルタ室(36)が、前記ウェハ室(42)の外側に配置されていることを特徴とする請求項1に記載の装置。
- 前記ウェハ室(42)が注入開口部を含み、
前記フィルタホルダ(44)に挿入された注入フィルタ(6)および前記注入開口部を通過するイオンビーム(2)が、前記ウェハホルダ(20、45)に保持された前記ウェハ(8)に衝突することができるように、前記フィルタホルダ(44)、前記注入開口部、および前記ウェハホルダ(20、45)が、一直線上にあることを特徴とする請求項5に記載の装置。 - 前記ウェハ室(42)が注入開口部を含み、
前記フィルタホルダ(44)に挿入された注入フィルタ(6)および前記注入開口部を通過するイオンビーム(2)が、前記ウェハホルダ(20、45)に保持された前記ウェハ(8)に衝突することができるように、前記フィルタホルダ(44)、前記注入開口部、および前記ウェハホルダ(20、45)が、一直線上にあることを特徴とする請求項6に記載の装置。
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JP2021182528A JP2022020768A (ja) | 2016-11-25 | 2021-11-09 | ウェハにイオンを注入するための方法 |
JP2023127475A JP2023153950A (ja) | 2016-11-25 | 2023-08-04 | ウェハにイオンを注入するための方法 |
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DE102016122791.9A DE102016122791B3 (de) | 2016-11-25 | 2016-11-25 | Ionenimplantationsanlage, Filterkammer und Implantationsverfahren unter Einsatz eines Energiefilterelements |
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US (3) | US11056309B2 (ja) |
EP (2) | EP3836188A3 (ja) |
JP (4) | JP6781895B2 (ja) |
CN (2) | CN113539770A (ja) |
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Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102018114667B3 (de) | 2018-06-19 | 2019-09-19 | Infineon Technologies Ag | Ionenstrahl-moderatorvorrichtung, ionenstrahl-implantationsgerät und ionen-implantationsverfahren |
DE102019112773B4 (de) * | 2019-05-15 | 2023-11-30 | mi2-factory GmbH | Vorrichtung und Verfahren zur Implantation von Teilchen in ein Substrat |
LU101808B1 (en) * | 2020-05-15 | 2021-11-15 | Mi2 Factory Gmbh | An ion implantation device comprising energy filter and additional heating element |
CN113163564B (zh) * | 2021-04-30 | 2024-06-04 | 中国科学院电工研究所 | 一种具有静电消除功能的电子束加工装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102005061663A1 (de) | 2005-12-22 | 2007-07-05 | RUHR-UNIVERSITäT BOCHUM | Ionenimplantationsvorrichtung, Verfahren zur Steuerung einer Ionenimplantationsvorrichtung sowie Abbremseinrichtung |
JP2008546160A (ja) | 2005-06-06 | 2008-12-18 | アクセリス テクノロジーズ インコーポレーテッド | 閉ループ線量制御のためにシリアル式注入装置の最終エネルギーベンド付近に配置された線量カップ |
JP2009518865A (ja) | 2005-12-07 | 2009-05-07 | バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド | フォトレジストのアウトガスによる影響を低減する技術 |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4278475A (en) | 1979-01-04 | 1981-07-14 | Westinghouse Electric Corp. | Forming of contoured irradiated regions in materials such as semiconductor bodies by nuclear radiation |
US4421988A (en) * | 1982-02-18 | 1983-12-20 | Varian Associates, Inc. | Beam scanning method and apparatus for ion implantation |
JPS60100351A (ja) * | 1984-10-19 | 1985-06-04 | Hitachi Ltd | イオン打込み装置 |
JPH05179447A (ja) * | 1991-12-26 | 1993-07-20 | Nissin High Voltage Co Ltd | イオン注入装置 |
US5604135A (en) * | 1994-08-12 | 1997-02-18 | Cree Research, Inc. | Method of forming green light emitting diode in silicon carbide |
JPH08250062A (ja) | 1995-03-07 | 1996-09-27 | Nissin Electric Co Ltd | イオンビームのスキャン幅調整方法 |
JPH1083785A (ja) * | 1996-09-09 | 1998-03-31 | Nissin Electric Co Ltd | イオン注入装置 |
US6545326B2 (en) * | 1997-09-19 | 2003-04-08 | Hitachi, Ltd. | Method of fabricating semiconductor device |
US6610564B2 (en) * | 2000-03-03 | 2003-08-26 | Shinichi Fukada | Method of fabricating semiconductor device |
US6982215B1 (en) * | 1998-11-05 | 2006-01-03 | Chartered Semiconductor Manufacturing Ltd. | N type impurity doping using implantation of P2+ ions or As2+ Ions |
US6734447B2 (en) * | 2002-08-13 | 2004-05-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Electron filter for current implanter |
DE10239312B4 (de) | 2002-08-27 | 2006-08-17 | Infineon Technologies Ag | Verfahren zur Herstellung eines Halbleiterbauelements mit einer Driftzone und einer Feldstoppzone und Halbleiterbauelement mit einer Driftzone und einer Feldstoppzone |
WO2005078758A1 (en) * | 2004-02-18 | 2005-08-25 | Waseda University | Ion implantation method and ion implantation apparatus |
JP5373702B2 (ja) * | 2010-06-07 | 2013-12-18 | 株式会社Sen | イオンビームスキャン処理装置及びイオンビームスキャン処理方法 |
DE102011075350A1 (de) | 2011-05-05 | 2012-11-08 | Fachhochschule Jena | Energiefilteranordnung für Ionenimplantationsanlagen |
WO2013147275A1 (ja) * | 2012-03-30 | 2013-10-03 | 富士電機株式会社 | 半導体装置の製造方法 |
RU2647161C2 (ru) * | 2012-11-12 | 2018-03-14 | Санофи Са | Узел для ингаляционного устройства и использование уплотнительного элемента |
JP5963662B2 (ja) * | 2012-12-04 | 2016-08-03 | 住友重機械イオンテクノロジー株式会社 | イオン注入装置 |
JP6036743B2 (ja) * | 2014-04-15 | 2016-11-30 | 日新イオン機器株式会社 | イオン注入装置 |
JP6195538B2 (ja) * | 2014-04-25 | 2017-09-13 | 住友重機械イオンテクノロジー株式会社 | イオン注入方法及びイオン注入装置 |
DE102015202121B4 (de) * | 2015-02-06 | 2017-09-14 | Infineon Technologies Ag | SiC-basierte Supersperrschicht-Halbleitervorrichtungen und Verfahren zur Herstellung dieser |
DE102015114429B4 (de) | 2015-08-28 | 2017-05-11 | Infineon Technologies Ag | Partikelbestrahlungsgerät, Strahlmodifikatorvorrichtung und Verfahren zum Herstellen einer Halbleitervorrichtung mit einer Junctionabschlussextensionszone |
CN105551922B (zh) * | 2015-12-11 | 2018-07-24 | 中国电子科技集团公司第四十八研究所 | 一种SiC高温高能铝离子注入机 |
DE102016106119B4 (de) * | 2016-04-04 | 2019-03-07 | mi2-factory GmbH | Energiefilterelement für Ionenimplantationsanlagen für den Einsatz in der Produktion von Wafern |
DE102016110523B4 (de) * | 2016-06-08 | 2023-04-06 | Infineon Technologies Ag | Verarbeiten einer Leistungshalbleitervorrichtung |
DE102018123596A1 (de) * | 2017-10-27 | 2019-05-02 | Infineon Technologies Ag | Halbleitervorrichtung mit Abschlussstruktur, die Feldzonen enthält, und Herstellungsverfahren |
DE102017131354A1 (de) * | 2017-12-27 | 2019-06-27 | Infineon Technologies Ag | Ein Halbleiterbauelement mit breitem Bandabstand und ein Verfahren zum Bilden eines Halbleiterbauelements mit breitem Bandabstand |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008546160A (ja) | 2005-06-06 | 2008-12-18 | アクセリス テクノロジーズ インコーポレーテッド | 閉ループ線量制御のためにシリアル式注入装置の最終エネルギーベンド付近に配置された線量カップ |
JP2009518865A (ja) | 2005-12-07 | 2009-05-07 | バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド | フォトレジストのアウトガスによる影響を低減する技術 |
DE102005061663A1 (de) | 2005-12-22 | 2007-07-05 | RUHR-UNIVERSITäT BOCHUM | Ionenimplantationsvorrichtung, Verfahren zur Steuerung einer Ionenimplantationsvorrichtung sowie Abbremseinrichtung |
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CN110024075B (zh) | 2021-07-30 |
EP3545543A1 (de) | 2019-10-02 |
EP3836188A3 (de) | 2021-11-03 |
US11056309B2 (en) | 2021-07-06 |
CN113539770A (zh) | 2021-10-22 |
US20230282439A1 (en) | 2023-09-07 |
JP2023153950A (ja) | 2023-10-18 |
US20210296075A1 (en) | 2021-09-23 |
DE102016122791B3 (de) | 2018-05-30 |
JP2022020768A (ja) | 2022-02-01 |
JP2020513645A (ja) | 2020-05-14 |
JP2021005564A (ja) | 2021-01-14 |
EP3836188A2 (de) | 2021-06-16 |
CN110024075A (zh) | 2019-07-16 |
US11705300B2 (en) | 2023-07-18 |
WO2018096145A1 (de) | 2018-05-31 |
JP6781895B2 (ja) | 2020-11-11 |
US11929229B2 (en) | 2024-03-12 |
US20190267209A1 (en) | 2019-08-29 |
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