JP6781895B2 - ウェハにイオンを注入するための方法および装置 - Google Patents
ウェハにイオンを注入するための方法および装置 Download PDFInfo
- Publication number
- JP6781895B2 JP6781895B2 JP2019522784A JP2019522784A JP6781895B2 JP 6781895 B2 JP6781895 B2 JP 6781895B2 JP 2019522784 A JP2019522784 A JP 2019522784A JP 2019522784 A JP2019522784 A JP 2019522784A JP 6781895 B2 JP6781895 B2 JP 6781895B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- filter
- ion beam
- injection
- energy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims description 18
- 235000012431 wafers Nutrition 0.000 title description 89
- 150000002500 ions Chemical class 0.000 title description 18
- 238000010884 ion-beam technique Methods 0.000 claims description 55
- 238000002347 injection Methods 0.000 claims description 51
- 239000007924 injection Substances 0.000 claims description 51
- 239000012528 membrane Substances 0.000 claims description 6
- 230000001678 irradiating effect Effects 0.000 claims description 5
- 230000007547 defect Effects 0.000 description 40
- 238000005468 ion implantation Methods 0.000 description 18
- 239000000758 substrate Substances 0.000 description 18
- 239000000463 material Substances 0.000 description 14
- 125000004429 atom Chemical group 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 9
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 9
- 238000009826 distribution Methods 0.000 description 8
- 229910010271 silicon carbide Inorganic materials 0.000 description 8
- 238000011160 research Methods 0.000 description 6
- 239000002245 particle Substances 0.000 description 5
- 230000004913 activation Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 230000008439 repair process Effects 0.000 description 3
- 239000000725 suspension Substances 0.000 description 3
- 230000001360 synchronised effect Effects 0.000 description 3
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 2
- 239000003570 air Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 125000005842 heteroatom Chemical group 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 238000009423 ventilation Methods 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 241001596291 Namibia Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000012080 ambient air Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000035876 healing Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- MYWUZJCMWCOHBA-VIFPVBQESA-N methamphetamine Chemical compound CN[C@@H](C)CC1=CC=CC=C1 MYWUZJCMWCOHBA-VIFPVBQESA-N 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/05—Electron or ion-optical arrangements for separating electrons or ions according to their energy or mass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
- H01J37/1472—Deflecting along given lines
- H01J37/1474—Scanning means
- H01J37/1477—Scanning means electrostatic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/20—Means for supporting or positioning the objects or the material; Means for adjusting diaphragms or lenses associated with the support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
- H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
- H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
- H01L21/0465—Making n or p doped regions or layers, e.g. using diffusion using ion implantation using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/024—Moving components not otherwise provided for
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/045—Diaphragms
- H01J2237/0456—Supports
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/047—Changing particle velocity
- H01J2237/0475—Changing particle velocity decelerating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/05—Arrangements for energy or mass analysis
- H01J2237/057—Energy or mass filtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/15—Means for deflecting or directing discharge
- H01J2237/151—Electrostatic means
- H01J2237/1518—Electrostatic means for X-Y scanning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/202—Movement
- H01J2237/20214—Rotation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31701—Ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31701—Ion implantation
- H01J2237/31705—Impurity or contaminant control
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31701—Ion implantation
- H01J2237/31706—Ion implantation characterised by the area treated
- H01J2237/3171—Ion implantation characterised by the area treated patterned
- H01J2237/31711—Ion implantation characterised by the area treated patterned using mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31701—Ion implantation
- H01J2237/31706—Ion implantation characterised by the area treated
- H01J2237/3171—Ion implantation characterised by the area treated patterned
- H01J2237/31713—Focused ion beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
- H01L29/32—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being within the semiconductor body
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
3 第1のイオン
4 第2のイオン
6 注入フィルタ
8 ウェハ
10 矩形(フィルタ付き)
12 ガウス分布(フィルタなし)
13 注入室
14 ビームラインインサート
15 ビーム開口
16 サスペンション
18 フィルタ膜
20 ウェハホイール
22 欠陥プロファイルのうねり
24 合計効果による減少
26 エネルギーフィルタとイオンビーム間のy方向の同期振動運動
28 イオンビームのz方向の振動運動
32 エネルギーフィルタの活性面
34 フィルタユニットとイオンビームの可変振動運動
36 フィルタ室
38 第1の真空弁
39 真空状態
40 第2の真空弁
41 真空ポンプシステム
42 ウェハ室
44 フィルタホルダー
45 ウェハチャック
46 注入イオン濃度
48 左軸
50 右軸
52 低温注入欠陥濃度
54 高温注入欠陥濃度
56 範囲外欠陥
58 範囲内欠陥
Claims (11)
- 注入フィルタ(6)を通過するイオンビーム(2)をウェハ(8)に照射する工程を含む方法であって、
前記イオンビーム(2)を前記ウェハ(8)上で移動させるために、前記イオンビーム(2)は、第1の方向および第2の方向に静電的に偏向され、
前記注入フィルタ(6)は、前記イオンビーム(2)の移動と協調して前記第2の方向に移動されることを特徴とする方法。 - 前記ウェハ(8)は前記第1の方向に最大幅を有し、前記注入フィルタ(6)は前記第1の方向に幅を有し、
前記第1の方向における前記注入フィルタ(6)の幅は、前記第1の方向における前記ウェハ(8)の最大幅以上であることを特徴とする請求項1に記載の方法。 - 前記第2の方向におけるあらゆる位置において、前記イオンビーム(2)は、固定された第1の端点と固定された第2の端点との間で前記第1の方向に移動されることを特徴とする請求項1に記載の方法。
- 前記第2の方向におけるあらゆる位置において、前記イオンビーム(2)は、第1の端点と第2の端点との間で前記第1の方向に移動され、前記第1の端点と前記第2の端点は可変であり、前記第2の方向における位置に依存することを特徴とする請求項1に記載の方法。
- 前記イオンビーム(2)が少なくとも略一定の速度で前記ウェハ(8)上を移動されることを特徴とする請求項1に記載の方法。
- 前記注入フィルタ(6)は、構造化フィルタ膜(18)を有するエネルギーフィルタであることを特徴とする請求項1に記載の方法。
- 前記ウェハ(8)が静止していることを特徴とする請求項1に記載の方法。
- 前記ウェハ(8)がその中心の周りを回転することを特徴とする請求項1に記載の方法。
- イオンビーム(2)を第1の方向および第2の方向に偏向するように構成されている偏向装置と、
注入フィルタ(6)と、
前記注入フィルタ(6)を保持し、前記偏向装置による前記イオンビーム(2)の偏向と協調して前記注入フィルタ(6)を第2の方向に移動させるように構成されるホルダ(44)と、を備える装置。 - 注入開口部およびウェハホルダ(20、45)を有するウェハ室(42)をさらに含み、
前記注入開口部は、前記イオンビーム(2)を前記ウェハ室(42)の内部に向けるように構成され、
前記ウェハホルダ(20、45)は、ウェハ(8)を保持するように構成され、静止していることを特徴とする請求項9に記載の装置。 - 前記注入フィルタ(6)は、構造化フィルタ膜(18)を有するエネルギーフィルタで
あることを特徴とする請求項9に記載の装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102016122791.9A DE102016122791B3 (de) | 2016-11-25 | 2016-11-25 | Ionenimplantationsanlage, Filterkammer und Implantationsverfahren unter Einsatz eines Energiefilterelements |
DE102016122791.9 | 2016-11-25 | ||
PCT/EP2017/080526 WO2018096145A1 (de) | 2016-11-25 | 2017-11-27 | Verfahren und vorrichtung zur ionenimplantation in wafern |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020154450A Division JP7004346B2 (ja) | 2016-11-25 | 2020-09-15 | ウェハにイオンを注入するための方法および装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2020513645A JP2020513645A (ja) | 2020-05-14 |
JP6781895B2 true JP6781895B2 (ja) | 2020-11-11 |
Family
ID=60480316
Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019522784A Active JP6781895B2 (ja) | 2016-11-25 | 2017-11-27 | ウェハにイオンを注入するための方法および装置 |
JP2020154450A Active JP7004346B2 (ja) | 2016-11-25 | 2020-09-15 | ウェハにイオンを注入するための方法および装置 |
JP2021182528A Pending JP2022020768A (ja) | 2016-11-25 | 2021-11-09 | ウェハにイオンを注入するための方法 |
JP2023127475A Pending JP2023153950A (ja) | 2016-11-25 | 2023-08-04 | ウェハにイオンを注入するための方法 |
Family Applications After (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020154450A Active JP7004346B2 (ja) | 2016-11-25 | 2020-09-15 | ウェハにイオンを注入するための方法および装置 |
JP2021182528A Pending JP2022020768A (ja) | 2016-11-25 | 2021-11-09 | ウェハにイオンを注入するための方法 |
JP2023127475A Pending JP2023153950A (ja) | 2016-11-25 | 2023-08-04 | ウェハにイオンを注入するための方法 |
Country Status (6)
Country | Link |
---|---|
US (3) | US11056309B2 (ja) |
EP (2) | EP3836188A3 (ja) |
JP (4) | JP6781895B2 (ja) |
CN (2) | CN113539770A (ja) |
DE (1) | DE102016122791B3 (ja) |
WO (1) | WO2018096145A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102018114667B3 (de) | 2018-06-19 | 2019-09-19 | Infineon Technologies Ag | Ionenstrahl-moderatorvorrichtung, ionenstrahl-implantationsgerät und ionen-implantationsverfahren |
DE102019112773B4 (de) * | 2019-05-15 | 2023-11-30 | mi2-factory GmbH | Vorrichtung und Verfahren zur Implantation von Teilchen in ein Substrat |
LU101808B1 (en) * | 2020-05-15 | 2021-11-15 | Mi2 Factory Gmbh | An ion implantation device comprising energy filter and additional heating element |
Family Cites Families (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4278475A (en) | 1979-01-04 | 1981-07-14 | Westinghouse Electric Corp. | Forming of contoured irradiated regions in materials such as semiconductor bodies by nuclear radiation |
US4421988A (en) * | 1982-02-18 | 1983-12-20 | Varian Associates, Inc. | Beam scanning method and apparatus for ion implantation |
JPS60100351A (ja) * | 1984-10-19 | 1985-06-04 | Hitachi Ltd | イオン打込み装置 |
JPH05179447A (ja) * | 1991-12-26 | 1993-07-20 | Nissin High Voltage Co Ltd | イオン注入装置 |
US5604135A (en) * | 1994-08-12 | 1997-02-18 | Cree Research, Inc. | Method of forming green light emitting diode in silicon carbide |
JPH08250062A (ja) | 1995-03-07 | 1996-09-27 | Nissin Electric Co Ltd | イオンビームのスキャン幅調整方法 |
JPH1083785A (ja) * | 1996-09-09 | 1998-03-31 | Nissin Electric Co Ltd | イオン注入装置 |
US6610564B2 (en) * | 2000-03-03 | 2003-08-26 | Shinichi Fukada | Method of fabricating semiconductor device |
US6545326B2 (en) * | 1997-09-19 | 2003-04-08 | Hitachi, Ltd. | Method of fabricating semiconductor device |
US6982215B1 (en) * | 1998-11-05 | 2006-01-03 | Chartered Semiconductor Manufacturing Ltd. | N type impurity doping using implantation of P2+ ions or As2+ Ions |
US6734447B2 (en) * | 2002-08-13 | 2004-05-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Electron filter for current implanter |
DE10239312B4 (de) | 2002-08-27 | 2006-08-17 | Infineon Technologies Ag | Verfahren zur Herstellung eines Halbleiterbauelements mit einer Driftzone und einer Feldstoppzone und Halbleiterbauelement mit einer Driftzone und einer Feldstoppzone |
JP2007523440A (ja) * | 2004-02-18 | 2007-08-16 | 学校法人早稲田大学 | イオン注入方法及び装置 |
CN101238539B (zh) * | 2005-06-06 | 2010-10-06 | 艾克塞利斯技术公司 | 靠近连续注入机最后能量过滤器中弯折部的闭环回路剂量控制剂量杯 |
US7482598B2 (en) | 2005-12-07 | 2009-01-27 | Varian Semiconductor Equipment Associates, Inc. | Techniques for preventing parasitic beamlets from affecting ion implantation |
DE102005061663B4 (de) * | 2005-12-22 | 2008-07-17 | RUHR-UNIVERSITäT BOCHUM | Ionenimplantationsvorrichtung |
JP5373702B2 (ja) * | 2010-06-07 | 2013-12-18 | 株式会社Sen | イオンビームスキャン処理装置及びイオンビームスキャン処理方法 |
DE102011075350A1 (de) | 2011-05-05 | 2012-11-08 | Fachhochschule Jena | Energiefilteranordnung für Ionenimplantationsanlagen |
US9466689B2 (en) * | 2012-03-30 | 2016-10-11 | Fuji Electric Co., Ltd. | Method for manufacturing a semiconductor device and semiconductor device manufactured thereby |
KR20150084938A (ko) * | 2012-11-12 | 2015-07-22 | 사노피 에스에이 | 흡입 장치용 조립체 및 밀봉 부재의 용도 |
JP5963662B2 (ja) * | 2012-12-04 | 2016-08-03 | 住友重機械イオンテクノロジー株式会社 | イオン注入装置 |
JP6036743B2 (ja) * | 2014-04-15 | 2016-11-30 | 日新イオン機器株式会社 | イオン注入装置 |
JP6195538B2 (ja) * | 2014-04-25 | 2017-09-13 | 住友重機械イオンテクノロジー株式会社 | イオン注入方法及びイオン注入装置 |
DE102015202121B4 (de) * | 2015-02-06 | 2017-09-14 | Infineon Technologies Ag | SiC-basierte Supersperrschicht-Halbleitervorrichtungen und Verfahren zur Herstellung dieser |
DE102015114429B4 (de) | 2015-08-28 | 2017-05-11 | Infineon Technologies Ag | Partikelbestrahlungsgerät, Strahlmodifikatorvorrichtung und Verfahren zum Herstellen einer Halbleitervorrichtung mit einer Junctionabschlussextensionszone |
CN105551922B (zh) * | 2015-12-11 | 2018-07-24 | 中国电子科技集团公司第四十八研究所 | 一种SiC高温高能铝离子注入机 |
DE102016106119B4 (de) * | 2016-04-04 | 2019-03-07 | mi2-factory GmbH | Energiefilterelement für Ionenimplantationsanlagen für den Einsatz in der Produktion von Wafern |
DE102016110523B4 (de) * | 2016-06-08 | 2023-04-06 | Infineon Technologies Ag | Verarbeiten einer Leistungshalbleitervorrichtung |
DE102018123596A1 (de) * | 2017-10-27 | 2019-05-02 | Infineon Technologies Ag | Halbleitervorrichtung mit Abschlussstruktur, die Feldzonen enthält, und Herstellungsverfahren |
DE102017131354A1 (de) * | 2017-12-27 | 2019-06-27 | Infineon Technologies Ag | Ein Halbleiterbauelement mit breitem Bandabstand und ein Verfahren zum Bilden eines Halbleiterbauelements mit breitem Bandabstand |
-
2016
- 2016-11-25 DE DE102016122791.9A patent/DE102016122791B3/de active Active
-
2017
- 2017-11-27 EP EP21154387.1A patent/EP3836188A3/de active Pending
- 2017-11-27 US US16/348,800 patent/US11056309B2/en active Active
- 2017-11-27 WO PCT/EP2017/080526 patent/WO2018096145A1/de unknown
- 2017-11-27 CN CN202110780341.5A patent/CN113539770A/zh active Pending
- 2017-11-27 EP EP17804894.8A patent/EP3545543A1/de not_active Withdrawn
- 2017-11-27 JP JP2019522784A patent/JP6781895B2/ja active Active
- 2017-11-27 CN CN201780072678.2A patent/CN110024075B/zh active Active
-
2020
- 2020-09-15 JP JP2020154450A patent/JP7004346B2/ja active Active
-
2021
- 2021-06-04 US US17/338,933 patent/US11705300B2/en active Active
- 2021-11-09 JP JP2021182528A patent/JP2022020768A/ja active Pending
-
2023
- 2023-05-12 US US18/196,548 patent/US11929229B2/en active Active
- 2023-08-04 JP JP2023127475A patent/JP2023153950A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
EP3836188A2 (de) | 2021-06-16 |
EP3545543A1 (de) | 2019-10-02 |
US11705300B2 (en) | 2023-07-18 |
CN110024075B (zh) | 2021-07-30 |
WO2018096145A1 (de) | 2018-05-31 |
JP2023153950A (ja) | 2023-10-18 |
US11056309B2 (en) | 2021-07-06 |
US11929229B2 (en) | 2024-03-12 |
JP2020513645A (ja) | 2020-05-14 |
EP3836188A3 (de) | 2021-11-03 |
US20190267209A1 (en) | 2019-08-29 |
JP7004346B2 (ja) | 2022-01-21 |
JP2022020768A (ja) | 2022-02-01 |
JP2021005564A (ja) | 2021-01-14 |
CN110024075A (zh) | 2019-07-16 |
DE102016122791B3 (de) | 2018-05-30 |
US20230282439A1 (en) | 2023-09-07 |
US20210296075A1 (en) | 2021-09-23 |
CN113539770A (zh) | 2021-10-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7004346B2 (ja) | ウェハにイオンを注入するための方法および装置 | |
JP7134508B2 (ja) | ウェハの製造に使用されるイオン注入システムのためのエネルギーフィルタ要素 | |
JP5934178B2 (ja) | イオン注入装置のための蒸気圧縮冷却チャック | |
JP5665679B2 (ja) | 不純物導入層形成装置及び静電チャック保護方法 | |
US6992311B1 (en) | In-situ cleaning of beam defining apertures in an ion implanter | |
TWI500065B (zh) | 用於降低離子植入系統中之微粒污染的方法和系統 | |
US9496117B2 (en) | Two-dimensional mass resolving slit mechanism for semiconductor processing systems | |
US20150197853A1 (en) | Substrate processing apparatus | |
KR101071581B1 (ko) | 이온 주입 장치 | |
TWI489510B (zh) | 減速透鏡 | |
JP2018532890A (ja) | 基板上での真空堆積のための装置及び真空堆積中に基板をマスキングするための方法 | |
JP5310977B2 (ja) | イオン注入機用の汚染物質を減少させる構造体及びその方法 | |
JP6632994B2 (ja) | 角度エネルギフィルタを用いた角度スキャン | |
JP2003059442A (ja) | イオン注入装置 | |
JP4843252B2 (ja) | 表面処理装置及び表面処理方法 | |
KR20050012170A (ko) | 스텐실 마스크, 하전 입자 조사 장치 및 방법 | |
TW202335023A (zh) | 用於具備專用的低濺射產量離子射束的粒子控制之高入射角度石墨 | |
TW202336956A (zh) | 基板處理裝置、基板處理方法及半導體元件之製造方法 | |
KR20070099987A (ko) | 이온 주입 장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190607 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20190607 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200602 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200729 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20200818 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20200915 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6781895 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |