CN1091264C - 由于折射率最优化得到的具有改进了性能的光吸收防反射涂层 - Google Patents

由于折射率最优化得到的具有改进了性能的光吸收防反射涂层 Download PDF

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Publication number
CN1091264C
CN1091264C CN97192776A CN97192776A CN1091264C CN 1091264 C CN1091264 C CN 1091264C CN 97192776 A CN97192776 A CN 97192776A CN 97192776 A CN97192776 A CN 97192776A CN 1091264 C CN1091264 C CN 1091264C
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China
Prior art keywords
refractive index
antireflective coating
light
coating
photoresist
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Expired - Lifetime
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CN97192776A
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English (en)
Chinese (zh)
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CN1212767A (zh
Inventor
R·R·达姆尔
R·A·诺伍德
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Merck Patent GmbH
Original Assignee
CLARY INSTALLATION INTERNATIONAL Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
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Publication of CN1212767A publication Critical patent/CN1212767A/zh
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11—Anti-reflection coatings
    • G02B1/111—Anti-reflection coatings using layers comprising organic materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
  • Laminated Bodies (AREA)
  • Paints Or Removers (AREA)
CN97192776A 1996-03-07 1997-03-06 由于折射率最优化得到的具有改进了性能的光吸收防反射涂层 Expired - Lifetime CN1091264C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US1300796P 1996-03-07 1996-03-07
US60/013,007 1996-03-07

Publications (2)

Publication Number Publication Date
CN1212767A CN1212767A (zh) 1999-03-31
CN1091264C true CN1091264C (zh) 2002-09-18

Family

ID=21757832

Family Applications (1)

Application Number Title Priority Date Filing Date
CN97192776A Expired - Lifetime CN1091264C (zh) 1996-03-07 1997-03-06 由于折射率最优化得到的具有改进了性能的光吸收防反射涂层

Country Status (7)

Country Link
EP (1) EP0885406B1 (cg-RX-API-DMAC7.html)
JP (2) JP2000506287A (cg-RX-API-DMAC7.html)
KR (1) KR100458685B1 (cg-RX-API-DMAC7.html)
CN (1) CN1091264C (cg-RX-API-DMAC7.html)
DE (1) DE69703283T2 (cg-RX-API-DMAC7.html)
TW (1) TW357395B (cg-RX-API-DMAC7.html)
WO (1) WO1997033200A1 (cg-RX-API-DMAC7.html)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100500499B1 (ko) * 1996-03-07 2005-12-30 에이제토 엘렉토로닉 마티리알즈 가부시키가이샤 이상분산에의한굴절율변형을통한하부반사방지코팅체
US5733714A (en) * 1996-09-30 1998-03-31 Clariant Finance (Bvi) Limited Antireflective coating for photoresist compositions
US5981145A (en) * 1997-04-30 1999-11-09 Clariant Finance (Bvi) Limited Light absorbing polymers
US5994430A (en) * 1997-04-30 1999-11-30 Clariant Finance Bvi) Limited Antireflective coating compositions for photoresist compositions and use thereof
US20030054117A1 (en) * 2001-02-02 2003-03-20 Brewer Science, Inc. Polymeric antireflective coatings deposited by plasma enhanced chemical vapor deposition
US7544750B2 (en) * 2005-10-13 2009-06-09 International Business Machines Corporation Top antireflective coating composition with low refractive index at 193nm radiation wavelength
FR2894346B1 (fr) * 2005-12-02 2012-03-30 Commissariat Energie Atomique Masque de photolithographie en extreme ultra-violet, a cavites absorbantes
JP2015172606A (ja) * 2012-07-25 2015-10-01 日産化学工業株式会社 リソグラフィー用レジスト上層膜形成組成物及びそれを用いた半導体装置の製造方法
FR3012132B1 (fr) * 2013-10-18 2016-08-05 Centre Nat Rech Scient Procede de fabrication de supports amplificateurs de contraste
CN103941548A (zh) * 2014-04-28 2014-07-23 吴钟达 具有吸光层的感光层结构与使用感光层结构的光刻工艺
CN117024652A (zh) * 2023-08-25 2023-11-10 复旦大学 一种光交联聚合物近红外光子材料及其制备方法和应用

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63110725A (ja) * 1986-10-29 1988-05-16 Nec Corp 半導体装置の製造方法
JP2897569B2 (ja) * 1991-12-30 1999-05-31 ソニー株式会社 レジストパターン形成時に用いる反射防止膜の条件決定方法と、レジストパターン形成方法
JP2829555B2 (ja) * 1992-08-20 1998-11-25 三菱電機株式会社 微細レジストパターンの形成方法
JP3334304B2 (ja) * 1993-11-30 2002-10-15 ソニー株式会社 半導体装置の製造方法
JP3248353B2 (ja) * 1994-06-29 2002-01-21 ソニー株式会社 反射防止膜の設計方法

Also Published As

Publication number Publication date
KR100458685B1 (ko) 2005-06-02
TW357395B (en) 1999-05-01
JP5097960B2 (ja) 2012-12-12
EP0885406B1 (en) 2000-10-11
CN1212767A (zh) 1999-03-31
JP2010107996A (ja) 2010-05-13
EP0885406A1 (en) 1998-12-23
DE69703283T2 (de) 2001-05-17
DE69703283D1 (de) 2000-11-16
JP2000506287A (ja) 2000-05-23
WO1997033200A1 (en) 1997-09-12
KR19990087480A (ko) 1999-12-27

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