CN1091233A - 在多层电路中形成通孔的方法 - Google Patents
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Abstract
本发明涉及一种在多层电路中快速形成密集通
孔图案的方法，其中介质层通孔利用受控工作条件下
的准分子激光器钻孔形成。
Description
本发明涉及在无机介质层中形成通孔的方法。它尤其涉及在多层电路用介质层中快速形成密集的通孔图案的方法。
通孔是用于连接多层电路中可操作的相邻诸层的导电通道。在多层电路中形成通孔的传统方法是：在基底导体图案上丝网印刷一层糊状介质浆料图案，借此通过掩蔽的不透明区形成通孔。然后将印刷上去的介质层经过焙烧，并通过丝网印刷把导电的糊状厚膜浆料充填于通孔中。制造通孔的另一种方法是在介质生带（green tape未经焙烧）上穿孔，再用上述方式通过丝网印刷充填通孔，并焙烧此介质生带，以去除有机中间物。但是，这些在多层电路中制造通孔的方法均有其局限性，也即在厚膜情况下，通孔直径需为8-10mil或更大，在未焙烧的介质生带情况下，通孔直径需为4mil或更大，只有这样，才能可靠地制成形状一致、匀称的通孔，如果试图用这些方法制作更小的通孔，则在印刷和焙烧过程中通孔有填满堵塞的倾向。
为改进传统的丝网印刷方法，许多实验家提出采用激光钻孔来形成通孔。例如，柯卡（Cocca）等人建议，对覆盖在厚膜导体上的未焙烧厚膜介质用激光钻孔（柯卡（Cocca et al）等，在高密度多层厚膜电路用介质中通孔的激光钻作，固态技术，1978年9月号，63-66页）。在用这种方法钻作通孔时，柯卡等人用脉冲式TAG（钇铝石榴石）激光器，功率水平为42-47MJ，单个激光脉冲，它造成被激光所钻出通孔下面金导体图案的去除。此外，巴雷特（Barrett et al.）等人揭示了已焙烧介质层的激光钻孔方法，采用脉冲式YAG激光器，功率1W，Q率为1KHz。研究表明，钻孔的深度与给定功率水平下的脉冲数直接相关（巴雷特等人，激光钻作厚膜通孔的扫描电子显微镜分析方法，混合电路，1984年春季第4期，61-63页）。
最近，在1990年10月25日提交的流水号为PCT/US90/06160的专利申请中，川崎（Kawasaki）等人公布了采用激光束在无机绝缘（介质）层中形成通孔的方法，此绝续层在光反射衬底上具有透明的保护层，用厚膜浆料充填通孔后除去保护层，然后重复上述步骤，以获取所要的层数，此后将整个组件一起焙烧。
另外，在1991年8月1日提出的流水号为07/739.205的美国专利申请中，揭示了一种在脉冲频率为1KHz等仔细控制的工作条件下，利用YAG激光器在未焙烧介质层中钻孔的方法。脉冲激光束利用一种脉冲电流计光束定位仪定位，以便于快速钻出一系列单个通孔。
每一种用激光钻作通孔的已有技术方法不是采用YAG就是采用CO2激光器，或者用波长相对较长的激光，它们依赖于用密集的强热促使有机物质几乎爆炸烧蚀。这些方法在很多场合下均适用。但是，它们在钻出极小通孔时不太理想，因为通孔的分辨率低于所希望的。当多层器件带有密集的通孔图案，例如每cm220个通孔或更多时，精细的通孔分辨率尤其重要。
因此本发明的主要目的在于提供一种在未焙烧层中快速形成尺寸预定的高密度通孔阵列图案的方法，该未焙烧层包括弥散分布在基本不含有挥发性有机溶剂的可烧蚀有机中间物的微细介质固体粒子，层厚为1～1，000微米，该方法包括下列步骤：
（a）准备一光束分割装置，它将一束准分子（Excimer）激光束分割成多束尺寸预定的较小光束，这些较小的光束排列成通孔阵列图案中选中部分的图案;
（b）调节光束分割装置在未焙烧层上部暴露表面与准分子激光束光源之间的相对位置，使得从光束分割装置发出的呈现阵列图案形状的这些较小准分子激光束投射到未焙烧层表面的预定区域;
（c）将这些较小的准分子激光束按下述条件投射到介质层的表面，即（1）功率水平为0.1～10J/cm2和（2）钻孔速率为每一脉冲0.2～2μm，以从暴露在激光束下的介质层区域中完全烧去有机中间物，而不致增加该处介质固体的密度;
（d）在未焙烧层的其它预定区域重复步骤（b）和（c），直到完成未焙烧层中通孔阵列图案为止。
本发明的方法任务在于在多层电路中迅速而又准确地形成通孔和通道。具体而言，本发明的任务是在焙烧前，在生带和厚膜介质材料中准确而又快速地形成一大片4～6mil或更小的精细通孔图案。
多层电路中的通道用于将由较薄介质材料层隔离开的各导电层的电路图案在电气上相连接。考虑到将复杂的多层电路对面积的要求降至最低所必需的极大电路密度，通路在位置和构形上都必须准确，且要非常快地形成，例如，一块4×4英寸的多层电路的单个介质层可能需要数量级为10，000个之多的通道，而由其制成的器件可能包含多达60层这样的介质层。此外，这类器件常常需要大批量生产，例如，每日生产数千件。
关于利用激光对包括多层电路用介质层在内的各种有机和无机材料进行钻孔和作标记，已有技术有很多这方面的介绍。确实，在如何以适当的制造速率极快地钻出通孔方面已取得不少重要进展。但是，随着多层器件的线宽和间距变得更为细小，通孔图案变得更为密集，要改进通孔的分辨率就变得日益重要。申请人发现，利用由准分子激光器产生的那种短波长光束，可以在极大程度上实现这点。
准分子激光器是种高功率激光，在紫外线频率范围内产生集中的光束。其产生激光的能力基于对各种双原子气体分子的激发。具体讲，准分子激光器构成-激光器家族，所发光的波长范围为157～353nm。最常用的4种准分子是XeF（353nm），XeCl（308nm），KrF（248nm）和ArF（193nm），本发明优先采用后面两种。将准分子激光器用于本发明的一个优点在于，它所产生的光更能够在有机膜层中引起光化学反应。事实上已经断定，“准分子激光器的短波长输出能使化学键真正地直接断开，从而提供一种非热方式控制反应的装置。（兹诺汀斯，T.A.，准分子激光器：崭露头角的半导体处理技术，《固态技术》，1986年9月号）。具体而言，可在显著减低的热条件下获得类似程度的反应。
由于准分子激光器发出的光束相当之大，故可将它方便地分割成许多尺寸适合于通孔钻作的较小光束。这样，准分子激光器在这种用途下的一个优点就是能同时钻作出大量通孔。因而不必在每个通孔完成之后将目标物或激光光源重新定位。此外，如果需要的话，那些通孔可以具有不同的尺寸和形状。再有，本发明不局限于形成通孔。它也可用于烧蚀衬底，以形成凹坑或凹陷。
光束的分割用常规的掩模，或者通过光学法利用诸如计算机产生的全息图之类装置加以实现。作为例示，在激光光源和要钻孔的未焙烧介质层之间，设置带有不透明和透明或开口区域的常规掩模，这些区域呈现所欲形成的通孔图案。掩模可以直接置于介质表面，或者可以从表面上移开，激光束通过光学透镜系统聚焦。可以看到，当从介质层的一个区域转向另一区域时，可以移动要钻孔的工件，或者移动激光源，或者移动两者，以实现激光束在工件上的再定位。
本发明方法的众多优点之一在于，它适用于通常的厚膜导体、介质材料和介质生带以及用这些材料形成电路的常规技术领域。
这样，导电层或金属化可由通常的厚膜导电浆料形成，后者由弥散分布在其流变性适合于丝网印刷的有机中间物中的微细导电金属或金属氧化物颗粒组成。这种可印刷的厚膜浆料也可包含微细的无机粘合剂颗粒。在印刷上适当的电路图案后，将导电厚膜层经过焙烧，以使有机中间物挥发和使固体成分烧结。
介质层最好用生介质带迭合一层或多层而成。生介质带由弥散分布在聚合物母体中的诸如钛酸钡、氧化铝或玻璃之类微细介质材料构成，当迭合的生带在氧化或非氧化气氛中焙烧时，聚合物母体可以热解。在焙烧时，聚合物母体被热解（烧除），介质材料则被烧结和/或致密化。介质层也可以用一层厚膜介质浆料形成。
这类厚膜导体的成分和生介质带及其使用方法在电子材料领域中是众所周知的。
所有欲在本发明中使用的衬底材料的一个必要条件是它们在形成薄层（例如600μm）之后必须坚硬，并且大小稳定。亦即在焙烧时，不应产生任何明显的弯曲度。本发明中最常采用的衬底将由氧化铝之类电绝缘的陶瓷材料做成。但是，在某些场合，衬底可以由迭合的生带、导热金属或者诸如瓷钢一类涂覆有陶瓷的金属做成。
生带层中的通孔一般用两种方法之一填充。一种技术是通过丝网印刷，将厚膜导电浆料直接填入通孔中。另一种方法是在丝网印刷导电覆盖层期间，利用厚膜浆料流体填入通孔。
本发明的方法可用来制备例如包含15至60层导电层的多层电路。生带厚度通常为50至400μm。另一方面，未焙烧厚膜层的厚度通常为25至50μm。
但本发明的方法可用来对厚达1000mil的介质材料进行钻孔。
为了说明本发明应用于烧蚀介质衬底的情况，兹举例如下。对于两种不同的生带成分用准分子激光器不同功率水平的光束在四种不同的生带上进行钻孔。在例1和例2中，生带的介质部分是一含有氧化铝填充剂的铅硼硅酸盐玻璃，而在例3和例4中，生带的介质部分是一含有堇青石填充剂的硼硅酸盐玻璃。每一种生带均以3.2和8.0J/cm2的能量密度水平进行烧蚀。这些试验的结果在下表中给出：
功率和薄膜成分对未焙烧生带钻孔速率的影响
| 实例号 | 1 | 2 | 3 | 4 |
| 生带成分（重量百分比）有机质介质固体 | 10.589.5① | 9.091.0① | 11.888.2② | 10.689.4② |
| 能量密度（J/cm2)钻孔速率（μm/脉冲） | 3.20.17 | 3.20.20 | 3.21.0 | 3.21.0 |
| 能量密度（J/cm2)钻孔速率（μm/脉冲） | 8.00.5 | 8.00.5 | -- | -- |
①含有氧化铝填充剂的铅硼硅酸盐玻璃;
②含有堇青石填充剂的硼硅酸盐玻璃;
上述数据表明，功率水平对钻孔速率有很大影响，但有机物和介质固体相对数量上较小的差别则否。然而含堇青石填充剂的生带具有明显较高的钻孔速率则表明，介质固体的性质极大地影响本发明所能达到的钻孔速率。
Claims (13)
1、一种在未焙烧层中快速形成尺寸预定的高密度通孔阵列图案的方法，该未焙烧层包含有分布在基本不含挥发性有机溶剂的可烧蚀有机中间物中微细的介质固体颗粒，层厚为1～1000μm，其特征在于，它包括下列步骤：
(a)准备一光束分割装置，它将一束准分子激光束分割成多束尺寸预定的较小光束，这些较小的光束排列成通孔阵列图案中选中部分的图案；
(b)调节光束分割装置在未焙烧层上部暴露表面与准分子激光束光源之间的相对位置，使得从光束分割装置发出的呈现阵列图案形的这些较小准分子激光束投射到未焙烧层表面的预定区域；
(c)将这些较小的准分子激光束按下述条件投射到电介质层的表面，即功率水平为0.1～10J/cm2和(2)钻孔速率为每一脉冲0.2～2μm，以暴露在激光束下的介质层区域中完全烧去有机中间物，而不致增加该处介质固体的密度；
(d)在未焙烧层的其它预定区域重复步骤(b)和(c)，直到未焙烧层中通孔阵列图案完成为止。
2、如权利要求1所述的方法，其特征在于，在通孔形成之后将一股气流对准未焙烧层的目标区域，以除去介质层被烧蚀区域中残留的任何剩余固体。
3、如权利要求1所述的方法，其特征在于，激光束的功率水平不高于1J/cm2。
4、如权利要求1所述的方法，其特征在于，激光束分割装置是一块带孔的掩模，掩模带有对准分子激光束而言不透明和透明的区域，透明区域按通孔的图案排列。
5、如权利要求4所述的方法，其特征在于，掩模与未焙烧层按共形接触方式定位。
6、如权利要求1所述的方法，其特征在于，激光束分割装置通过光学法用计算机产生的全息图形成呈现图案阵列的多束激光束。
7、如权利要求1所述的方法，其特征在于，未焙烧层区域上图案化的通孔密度至少为每cm220个通孔。
8、如权利要求1所述的方法，其特征在于，未焙烧层是生带。
9、如权利要求1所述的方法，其特征在于，未焙烧层是经过加热干燥从而去除掉挥发性溶剂的厚膜浆料。
10、如权利要求1所述的方法，其特征在于，介质固体包括堇青石和硼硅酸盐玻璃。
11、如权利要求1所述的方法，其特征在于，介质固体包括氧化铝和铅硼硅酸盐玻璃。
12、如权利要求1所述的方法，其特征在于，可烧蚀有机中间物包括丙烯酸聚合物。
13、如权利要求1所述的方法，其特征在于，准分子选自XeF和ArF。
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/002,247 US5294567A (en) | 1993-01-08 | 1993-01-08 | Method for forming via holes in multilayer circuits |
| US002,247 | 1993-01-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1091233A true CN1091233A (zh) | 1994-08-24 |
Family
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN94100039A Pending CN1091233A (zh) | 1993-01-08 | 1994-01-07 | 在多层电路中形成通孔的方法 |
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| Country | Link |
|---|---|
| US (1) | US5294567A (zh) |
| EP (1) | EP0606645A1 (zh) |
| JP (1) | JPH077273A (zh) |
| KR (1) | KR970006230B1 (zh) |
| CN (1) | CN1091233A (zh) |
| TW (1) | TW230863B (zh) |
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-
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- 1993-01-08 US US08/002,247 patent/US5294567A/en not_active Expired - Fee Related
- 1993-12-14 TW TW082110607A patent/TW230863B/zh active
- 1993-12-27 EP EP9393120950A patent/EP0606645A1/en not_active Withdrawn
- 1993-12-30 JP JP5354493A patent/JPH077273A/ja active Pending
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1994
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Also Published As
| Publication number | Publication date |
|---|---|
| US5294567A (en) | 1994-03-15 |
| JPH077273A (ja) | 1995-01-10 |
| EP0606645A1 (en) | 1994-07-20 |
| KR970006230B1 (en) | 1997-04-24 |
| KR940019199A (ko) | 1994-08-19 |
| TW230863B (zh) | 1994-09-21 |
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