CN109075108B - 半导体处理腔室 - Google Patents

半导体处理腔室 Download PDF

Info

Publication number
CN109075108B
CN109075108B CN201780025151.4A CN201780025151A CN109075108B CN 109075108 B CN109075108 B CN 109075108B CN 201780025151 A CN201780025151 A CN 201780025151A CN 109075108 B CN109075108 B CN 109075108B
Authority
CN
China
Prior art keywords
substrate support
lid
coupled
gas
pumping
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201780025151.4A
Other languages
English (en)
Other versions
CN109075108A (zh
Inventor
阿伦·缪尔·亨特
梅兰·贝德亚特
尼拉杰·默钱特
道格拉斯·R·麦卡利斯特
姚东明
龙·刚·塞缪尔·陈
劳拉·哈夫雷查克
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of CN109075108A publication Critical patent/CN109075108A/zh
Application granted granted Critical
Publication of CN109075108B publication Critical patent/CN109075108B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/54—Providing fillings in containers, e.g. gas fillings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32899—Multiple chambers, e.g. cluster tools

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

描述了一种半导体处理装置，所述半导体处理装置具有：具有壁的主体，所述壁定义所述主体内的两个处理腔室；穿过所述壁的通路，在所述两个处理腔室之间形成流体耦合；盖，可移除地耦合至所述主体，所述盖具有与所述通路流体连通的门户；气体活化器，在所述处理腔室外面耦合至所述盖，所述气体活化器具有与所述盖的所述门户流体连通的出口；基板支撑件，设置在各处理腔室中，各基板支撑件具有至少两个加热区，各加热区具有嵌入式加热构件；气体分布器，面向各基板支撑件地耦合至所述盖；及热控制构件，在各气体分布器的边缘处耦合至所述盖。

Description

半导体处理腔室
技术领域
本公开内容的实施方式涉及半导体制造领域。具体而言，本公开内容的实施方式涉及半导体处理装置。
背景技术
半导体设备在尺寸上持续缩小。随着半导体设备的临界尺度缩小到10nm以下，正在研究克服如此尺度下在使用硅时变得明显的效能问题的新的半导体材料。锗与硅越来越多地被包括在一起以作为合金来改良设备的各种部件的半导性质。例如，通道区域、源漏极区域及用于源极及漏极区域的触点越来越多以硅锗合金制造。对于逻辑结构来说典型的是，这些区域通常掺有导电性强化材料，例如硼。同为典型的是，掺杂工艺之后是活化工艺，以减少各种结构的电阻及接取掺杂物的导电性强化特征。通道及源极/漏极区域一般是在单独的步骤中被掺杂及活化的，虽然在某些工艺中，这些区域是在一个掺杂步骤及一个热处理步骤中被掺杂及活化。触点区域一般是在后续的步骤中被掺杂及活化。这些区域的小尺寸造成了在后续的热处理期间降解的高可能性。已发现的是，在常用的热处理被用于活化掺硼的硅锗(SiGe:B)触点时，通道区域中所诱发的应变可能松解，且通道及源极/漏极中的掺杂物分布可能降级。需要可活化10nm及更小设备中的掺杂触点的热处理。
发明内容
本文中所述的实施方式提供了一种半导体处理装置，所述半导体处理装置包括：主体，具有壁，所述壁定义所述主体内的两个处理腔室；通路，穿过所述壁而在所述两个处理腔室之间形成流体耦合；盖，可移除地耦合至所述主体，所述盖具有与所述通路流体连通的门户；气体活化器，在所述处理腔室外面耦合至所述盖，所述气体活化器具有与所述盖的所述门户流体连通的出口；基板支撑件，设置在各处理腔室中，各基板支撑件具有至少两个加热区；气体分布器，面向各基板支撑件地耦合至所述盖；及热控制构件，在各气体分布器的边缘处耦合至所述盖。
其它实施方式提供了一种半导体处理装置，所述半导体处理装置包括：主体，具有壁，所述壁定义所述主体内的两个处理腔室；通路，穿过所述壁而在所述两个处理腔室之间形成流体耦合；盖，可移除地耦合至所述主体，所述盖具有与所述通路流体连通的门户；气体活化器，在所述处理腔室外面耦合至所述盖，所述气体活化器具有与所述盖的所述门户流体连通的出口；基板支撑件，设置在各处理腔室中，各基板支撑件具有至少两个加热区及基板支撑区域，所述基板支撑区域包括从所述基板支撑区域延伸的多个基板支撑面；气体分布器，面向各基板支撑件地耦合至所述盖；及热控制构件，在各气体分布器的边缘处耦合至所述盖。
其它实施方式提供了一种半导体处理装置，所述半导体处理装置包括：主体，具有壁，所述壁定义所述主体内的两个处理腔室；通路，经由所述壁而在所述两个处理腔室之间形成流体耦合；盖，可移除地耦合至所述主体，所述盖具有与所述通路流体连通的门户；远程等离子体单元，在所述处理腔室外面耦合至所述盖，所述远程等离子体单元具有与所述盖的所述门户流体连通的出口；基板支撑件，设置在各处理腔室中，各基板支撑件具有至少两个加热区及基板支撑区域，所述基板支撑区域包括从所述基板支撑区域延伸的多个基板支撑面；气体分布器，面向各基板支撑件地耦合至所述盖；及热控制构件，在各气体分布器的边缘处耦合至所述盖。
附图说明
可通过参照实施方式(其中的某些实施方式绘示于随附的附图中)来获得本公开内容的上文所简要概述的更具体的描述，使得可详细了解本公开内容的上述特征。然而，要注意的是，随附附图仅绘示示例性实施方式且因此并不被视为保护范围的限制，可容许其它等效的实施方式。
图1为依据一个实施方式的半导体处理装置的透视横截面图。
图2为图1的装置的底板区域的细节图。
图3为用于图1的装置的排气泵送流的示意图。
图4为图1的装置的处理腔室的盖区域的细节图。
图5为图1的装置的局部分解图，以图示装置的内部特征。
为了促进了解，已尽可能使用相同的附图标记指定通用于这些附图的相同构件。设想的是，可有益地将一个实施方式的构件及特征并入其它实施方式而无需赘述。
具体实施方式
图1为依据一个实施方式的半导体处理装置100的透视横截面图。装置100包括主体102，主体102具有两个侧壁104及将两个侧壁104耦合在一起的底板108。盖106可移除地耦合至主体102并与底板108相对。主体102也具有定义主体内的两个处理腔室112及114的分隔壁110。半导体装置100可因此被描述为双腔室装置。气体活化器116耦合至盖106以供向处理腔室112、114提供经活化气体。通路118穿过壁110将处理腔室112、114流体耦合在一起，并且气体活化器116的出口120经由形成于盖106中的门户122与通路流体连通。
各腔室112、114具有基板支撑件124，为了简化起见，在图1中仅图示基板支撑件中的一者。基板支撑件124设置在所述腔室里面并位于腔室的中心位置。基板支撑件124具有至少两个加热区126及128，每个加热区具有嵌入式加热构件131，加热构件131可为电阻式构件或流体导管。各基板支撑件124具有基板支撑区域130。基板支撑区域130的特征为与要在其上处理的基板相容及与腔室中的处理环境相容的表面材料。示例性材料包括石英及陶瓷，例如氧化铝及氮化铝。基板支撑区域130是由围绕基板支撑区域130的壁132所定义的。基板一般搁置在基板支撑区域130上，且可在基板周边的全部或部分周围接触壁。多个位置特征134从壁延伸，且在基板被传送至基板支撑件124时帮助将基板定位至基板支撑区域130上。壁132也定义基板支撑件的轮缘136。壁132可具有约1μm至约500μm的高度，例如约5μm至约50μm，例如约10μm。
基板支撑区域130具有从基板支撑区域130延伸的多个基板支撑面138。基板支撑面138被升高至基板支撑区域130上方以提供基板支撑件124及搁置在其上的基板之间的最小接触。基板支撑面138可具有从约1μm至约500μm的高度，例如从约5μm至约50μm，例如约25μm。基板支撑面138可为圆柱形的柱或圆头的凸块。
基板支撑区域130也具有形成于其上的多个沟槽140。周边沟槽142在基板支撑区域130的周边周围行进，同时多个直线沟槽144从周边沟槽142朝向基板支撑区域130的中心区域行进。一个或多个门户146(在图1的实施方式中存在两个门户146)被提供在基板支撑区域130的中心区域中以供施加真空。基板支撑件124为真空夹具，但可使用静电夹具或另一固定机构。门户144提供真空源(未图示)及基板支撑区域130之间的流体连通，以向基板接触基板支撑面138的一侧施加减少的压力。气体在基板支撑面138周围并沿沟槽140在基板支撑区域130上方流动。在图1的实施方式中，两个直线沟槽144从各门户146行进，且一个直线沟槽144沿基板支撑件124的直径从周边沟槽142的一侧向另一侧行进而接触两个门户146。应注意的是，可使用任何方便的沟槽布置。
在一个实施方式中，基板支撑件124可在高达450℃的温度下运作。此类基板支撑件124可以可抵挡如此高温的材料(或多个材料)制造。在基板支撑件124以多个材料制造的情况下，这些材料以可在不降解或分离的情况下抵挡高温的方式接合。在某些情况下，使基板支撑件的材料能抵抗来自可能由经历热处理的基板发射的物质的化学腐蚀也是有帮助的。石英及陶瓷(例如氧化铝及氮化铝)适用于许多情况。在一个实施方式中，基板支撑件124为单块的氮化铝。
基板支撑件124可具有嵌在基板支撑件124中的一个或多个温度传感器以及位于基板支撑件124外部的一个或多个温度传感器。例如，一个或多个热电耦(未图示)可嵌在基板支撑件124中以直接感测基板支撑件的温度。替代性或附加性地，电阻式温度传感器可耦合至用于加热构件1xx的电源电路。在一个实施方式中，热电耦嵌在基板支撑件124中以感测外加热区的温度，而电阻式温度传感器用以监测内加热区的温度。此类布置通过仅在可被轻易接取以用于维护的基板支撑件124的外缘处允许嵌入的热电耦而简化了基板支撑件124。
气体活化器116在某些情况下可为远程等离子体单元。进气口150允许气体流进外壳152且被活化器154激发，这在本质上可能是热、电气或辐射的。可使用标准活化器(例如微波、RF及UV活化器)。气体活化器116为远程等离子体单元，所述远程等离子体单元产生流进通路122及流进处理腔室112及114的自由基。气体活化器116的出口120是高流量出口，以最小化自由基的去活化，使得流进处理腔室的气体具有高自由基含量。通风道155朝向出口120引导外壳152中的自由基气体的流动。通风道155可为化学惰性材料，例如石英或陶瓷，例如氧化铝。
化学惰性衬垫156可设置在通路122中，以在自由基流进处理腔室112、114时最小化壁的重组。衬垫156可为石英，且可附接至通路122的壁或是可移除的。衬垫156具有与气体活化器116的出口120对准的入口158，以维持从气体活化器116的外壳152经由通路122(及衬垫156)进入处理腔室112及114的流体连通。若衬垫156是可移除的，则可提供对准特征以定位衬垫156，使得入口158与气体活化器116的出口对准。在图1的实施方式中，可沿衬垫156的外表面提供定位特征157。在此情况下，定位特征157是圆形的，但定位特征157可为用于纵向定位衬垫156的任何方便的形状。定位特征157匹配通路122的表面中的凹口159。在图1的实施方式中，衬垫156及通路122两者在横截面上是矩形的，从而保证了旋转对准。在通路122及衬垫156在横截面上是圆形的实施方式中，定位特征可为从衬垫156的外表面延伸且匹配通路122的表面中的相对应凹口的凸耳(tab)。
衬垫156可中途沿通路122延伸，或沿通路122的整个长度延伸。在某些情况下，衬垫156可延伸超过通路156而进入处理腔室112、114。在气体活化器116用以活化用于基板处理的气体的实例中，衬底156的末端可定位在基板支撑件124的边缘附近，例如在基板支撑区域130的边缘附近。衬垫156具有从衬垫156的中心到末端的恒定区域流径。然而，在其它实施方式中，衬垫156可具有从中心到末端的扩展的流径。在图1的实施方式中，通路122的形状匹配衬垫156的形状。在衬垫具有扩展的流径的情况下，通路122可具有从中心向末端扩展的匹配形状或在衬垫末端处配合衬垫的恒定区域横截面。
装置100具有设置在盖106中的热控制构件160。热控制构件160包括穿过盖106而设置的导管(在图1中是不可见的)，所述导管在门户162中结束以供向盖提供热控制。导管可容纳用于加热的电阻式构件，或可允许用于加热或冷却的传热媒体的流动。在气体活化器116产生热的情况下，可在热控制构件160中使用冷却媒体以控制盖106处的温度。类似的热控制构件160图示于装置100的底板108中。
基板支撑件124的特征为用于向基板支撑件124中的电气构件(例如加热器、温度传感器及夹持构件)供应电力的导管170。导管170也可用以向基板支撑件124供应真空。导管配合到各处理腔室112、114的底板中的开口172以提供外部的接取。基板支撑件124在各处理腔室112、114中面向喷头190，喷头190耦合至盖106。
各处理腔室112、114具有一个或多个衬垫以防止处理腔室112、114的壁处的化学反应及改良腔室的热均匀性。壁衬垫180(其如图1中所示地可为圆柱形的)大致保护腔室壁免于化学腐蚀及减少基板支撑件124周围的腔室容积。底板衬垫182保护腔室底板108免于化学腐蚀。也可提供热衬垫184以允许衬垫180及182的加热以减少腔室中的热不均匀性。热衬垫184可安装在腔室底板108及底板衬垫182之间，或底板衬垫182可安装在腔室底板108及热衬垫184之间。热衬垫184可包括电阻式加热构件，且穿过处理腔室112、114的底板的连接可向热衬垫184提供电力。注意，仅装置100的一个腔室被图示为具有热衬垫184，但两个腔室皆可具有此类热衬垫。
主体102可被一体地形成为单一物体，或各腔室112、114可具有可耦合在一起的侧壁(例如通过螺栓连接来耦合在一起)以做出具有分隔壁的双腔室布置。如此实施方式中的个别腔室将各自具有在腔室耦合在一起时将一起形成通路122的通路。
图2为装置100之底板区域的细节图。图2包括未图示于图1中的耦合至装置100的底板108的特征。如上所述，开口172允许基板支撑件124的导管170延伸通过装置100的底板108。各处理腔室112、114由伸缩管202密封，伸缩管202由泵送块204耦合至底板108。泵送块204具有匹配腔室底板108之开口172的开口203。开口203具有有着多个泵送门户207的壁205，泵送门户207将气体接纳进入穿过泵送块204的环状泵送通道。出口206耦合至泵送通道209以用于从处理腔室112移除气体。泵送块204的结构在基板支撑件124的导管170周围提供对称的中心泵送。
气体流进处理腔室112、在基板支撑件124周围流动且朝向开口172流动。气体经由基板支撑件124(图1)的导管170周围的开口172离开腔室112。气体流过泵送块204的出口206而进入耦合至泵送块204的腔室排气管线208。加热器210可被提供在腔室排气管线208的部分或全部上以防止腔室排气管线208中的沉积。各腔室112、114的腔室排气管线208耦合至腔室泵送管线212，腔室泵送管线212通过密封的凸缘216连接至真空泵(未图示)，提供高传导性的泵送路径。净化气体门户218可被提供至腔室泵送管线212。
伸缩管202具有用于将净化气体围绕基板支撑件124的导管170而提供进伸缩管202的净化气体门户214。净化气体源(未图示)可耦合至净化气体门户214以将净化气体流进伸缩管202并向上朝向出口206流动以防止腔室处理气体在伸缩管202的内表面上形成沉积物。在气体活化器116(图1)用以活化清洁气体的情况下，可中断流进伸缩管202的净化气体以允许清洁气体接触伸缩管202的内表面并移除其上的任何不想要的沉积物。或者，在不需要清洁气体与伸缩管202间的交互作用的情况下，可维持净化气体流以防止清洁气体进入伸缩管202。腔室112及114中的各者具有具备上述构件的排气系统。
图3为用于装置100的排气泵送流的示意图。管线302将各基板支撑件124的基板支撑区域130(图1)连接至作为真空源的腔室泵。管线302被穿过导管170而被设置并连接至腔室泵送管线212。压力控制器304监控腔压及基板夹持压力(在使用真空夹持时)。压力控制气体306(一般是非反应性气体，例如氮、氦或氩)耦合进腔室泵送管线212以控制设置在基板支撑件124上的基板的两个主要面之间的压力差来实现恒定夹持力。流量限制器316提供回压以允许流量控制。压力控制器调整管线302中的阀308、腔室泵送管线212中的阀310和312、及通往压力控制气体306的阀314，以控制压力差。压力控制器304在某些情况下可包括阀314。如此，压力控制器不暴露于离开处理腔室112、114的处理气体。
图4为装置100的处理腔室114的盖区域的详细图。图4图示固定至盖106的喷头190(在此情况下是使用螺栓来固定)。O形环404密封喷头及盖之间的界面。穿过喷头190的孔402允许气体流过喷头而进入腔室114。气体经由入口门户406流进盖而进入扩散器408，扩散器408通过O形环410抵着盖106而密封。扩散器408可具有充气部412及多个开口414以分布气体，因此避免喷头190的中心处的流量集中，所述流量集中可能造成来自气体喷射的热不均匀性。或者，扩散器408可具有多孔表面来将气体流至喷头190。如上所述，处理腔室112、114中的各者具有如图4中所示的喷头。
图5为装置100的局部分解图，其中盖106及其所有附件被移除以图示装置100的内部特征。通路122及凹口159是可见的，壁衬垫180、底板衬垫182及热衬垫184也是可见的。处理腔室112被图示为安装有衬垫180、182，同时处理腔室114为了明确起见被图示为衬垫是被隔开的。基板支撑件124被图示为与处理腔室112隔开，且未图示处理腔室114。底板衬垫182具有开口506以接纳基板支撑件124的导管170。壁衬垫180具有用以允许基板进入及离开各腔室的开口502，及用于将气体从通路122(及衬垫156，未图示于图5中)流进各腔室的切口504。底板衬垫182也具有多个开口508以允许升降销512向基板支撑区域130输送基板并从基板支撑区域130输送基板。基板支撑件124具有与底板衬垫182中之开口508配合的开口510。
图5的视角是与图1的视角的装置100的相对侧的视角，且图示基板接取开口522，处理腔室112、114中的各者有一个基板接取开口522。基板接取开口522中的各者的特征为以多个群组514群集在一起的多个净化气体端口516。各净化气体端口516具有相对应的导管518及净化气体入口端口520。净化气体入口端口520定位在主体102的底缘处，且提供用以将净化气体源耦合至主体102的位置。如图5中所示，主体102具有外壁，所述外壁具有盖附近的第一边缘及与第一边缘相对的第二边缘，净化气体门户形成于外壁的第二边缘中，且穿过外壁的通路将各基板接取开口流体耦合至相对应的净化气体门户。在处理期间，门部件覆盖及密封基板接取开口522，使得流过净化气体入口端口520、导管518及端口516的净化气体流进基板接取开口522并朝向腔室中心处的腔室排气件流动。这防止了处理气体累积在基板接取开口522中并在其上沉积材料。
虽然上文是针对本发明的实施方式，可在不脱离本发明的基本范围的情况下自行设计本发明的其它和进一步的实施方式，且本发明的保护范围是由所附权利要求书所决定的。

Claims (13)

1.一种半导体处理装置，包括：
主体，具有壁，所述壁定义所述主体内的两个处理腔室；
通路，所述通路穿过所述壁而在所述两个处理腔室之间形成流体耦合；
盖，可移除地耦合至所述主体，所述盖具有与所述通路流体连通的门户；
所述通路中的化学惰性衬垫，所述化学惰性衬垫具有与所述盖的所述门户配合的开口；
气体活化器，在所述处理腔室外面耦合至所述盖，所述气体活化器具有与所述盖的所述门户流体连通的出口；
基板支撑件，设置在各处理腔室中，各基板支撑件具有至少两个加热区；
气体分布器，面向各基板支撑件而耦合至所述盖；及
热控制构件，在各气体分布器的边缘处耦合至所述盖。
2.根据权利要求1所述的半导体处理装置，更包括耦合至所述气体活化器的入口的活化气体源、含氧气体源、含氮气体源及延长气体源。
3.根据权利要求2所述的半导体处理装置，其中所述活化气体为Ar或He，所述含氧气体为O2、CO或CO2，所述含氮气体为N2、NF3或NH3，而所述延长气体为N2或He。
4.根据权利要求1所述的半导体处理装置，其中所述基板支撑件具有基板支撑区域及壁，所述基板支撑区域包括从所述基板支撑区域延伸的多个基板支撑面，所述壁具有从围绕所述基板支撑区域的所述壁延伸的多个位置特征。
5.根据权利要求4所述的半导体处理装置，其中各处理腔室具有底板，所述底板具有耦合至所述底板的排气口及泵送块，其中所述泵送块具有匹配所述排气口的开口，所述泵送块具有通过多个泵送门户耦合至所述泵送块的所述开口的环状泵送通道，所述泵送块具有流体耦合至所述环状泵送通道的出口，且所述基板支撑件具有穿过所述排气口及所述泵送块的所述开口而设置的导管。
6.根据权利要求1所述的半导体处理装置，其中所述主体具有穿过所述主体的外壁的用于各处理腔室的基板接取开口，且所述外壁具有与各基板接取开口流体连通的净化气体门户。
7.根据权利要求6所述的半导体处理装置，其中所述外壁具有位于所述盖附近的第一边缘及与所述第一边缘相对的第二边缘，所述净化气体门户形成于所述外壁的所述第一边缘中，且穿过所述外壁的通路将各基板接取开口流体耦合至相对应的净化气体门户。
8.根据权利要求7所述的半导体处理装置，其中各基板接取开口具有以多个群组布置的多个净化气体门户。
9.一种半导体处理装置，包括：
主体，具有壁，所述壁定义所述主体内的两个处理腔室；
通路，穿过所述壁而在所述两个处理腔室之间形成流体耦合；
盖，可移除地耦合至所述主体，所述盖具有与所述通路流体连通的门户；
所述通路中的石英衬垫，所述石英衬垫具有与所述盖的所述门户配合的开口；
气体活化器，在所述处理腔室外面耦合至所述盖，所述气体活化器具有与所述盖的所述门户流体连通的出口；
基板支撑件，设置在各处理腔室中，各基板支撑件具有至少两个加热区及基板支撑区域，所述基板支撑区域包括从所述基板支撑区域延伸的多个基板支撑面；
气体分布器，面向各基板支撑件地耦合至所述盖；及
热控制构件，在各气体分布器的边缘处耦合至所述盖。
10.根据权利要求9所述的半导体处理装置，其中所述基板支撑件具有壁，所述壁具有从围绕所述基板支撑区域的所述壁延伸的多个位置特征。
11.根据权利要求10所述的半导体处理装置，其中各处理腔室具有底板，所述底板具有耦合至所述底板的排气口及泵送块，其中所述泵送块具有匹配所述排气口的开口，所述泵送块具有通过多个泵送门户耦合至所述泵送块的所述开口的环状泵送通道，所述泵送块具有流体耦合至所述环状泵送通道的出口，且所述基板支撑件具有穿过所述排气口及所述泵送块的所述开口而设置的导管。
12.一种半导体处理装置，包括：
主体，具有壁，所述壁定义所述主体内的两个处理腔室；
通路，穿过所述壁而在所述两个处理腔室之间形成流体耦合；
盖，可移除地耦合至所述主体，所述盖具有与所述通路流体连通的门户；
所述通路中的化学惰性衬垫，所述化学惰性衬垫具有与所述盖的所述门户配合的开口；
远程等离子体单元，在所述处理腔室外面耦合至所述盖，所述远程等离子体单元具有与所述盖的所述门户流体连通的出口；
基板支撑件，设置在各处理腔室中，各基板支撑件具有至少两个加热区及基板支撑区域，所述基板支撑区域包括从所述基板支撑区域延伸的多个基板支撑面；
气体分布器，面向各基板支撑件地耦合至所述盖；及
热控制构件，在各气体分布器的边缘处耦合至所述盖。
13.根据权利要求12所述的半导体处理装置，其中各处理腔室具有一底板，所述底板具有耦合至所述底板的排气口及泵送块，其中所述泵送块具有匹配所述排气口的开口，所述泵送块具有通过多个泵送门户耦合至所述泵送块的所述开口的环状泵送通道，所述泵送块具有流体耦合至所述环状泵送通道的出口，且所述基板支撑件具有穿过所述排气口及所述泵送块的所述开口而设置的导管。
CN201780025151.4A 2016-04-11 2017-03-15 半导体处理腔室 Active CN109075108B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201662320861P 2016-04-11 2016-04-11
US62/320,861 2016-04-11
US15/417,865 US10741428B2 (en) 2016-04-11 2017-01-27 Semiconductor processing chamber
US15/417,865 2017-01-27
PCT/US2017/022468 WO2017180283A2 (en) 2016-04-11 2017-03-15 Semiconductor processing chamber

Publications (2)

Publication Number Publication Date
CN109075108A CN109075108A (zh) 2018-12-21
CN109075108B true CN109075108B (zh) 2022-04-01

Family

ID=59998274

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201780025151.4A Active CN109075108B (zh) 2016-04-11 2017-03-15 半导体处理腔室

Country Status (6)

Country Link
US (1) US10741428B2 (zh)
JP (1) JP6709855B2 (zh)
KR (1) KR102147782B1 (zh)
CN (1) CN109075108B (zh)
TW (1) TWI707420B (zh)
WO (1) WO2017180283A2 (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6388182B1 (ja) * 2017-07-25 2018-09-12 Smc株式会社 ゲートバルブの取付構造
TWI812475B (zh) * 2018-09-29 2023-08-11 美商應用材料股份有限公司 具有精確溫度和流量控制的多站腔室蓋
US11373890B2 (en) * 2018-12-17 2022-06-28 Applied Materials, Inc. Wireless in-situ real-time measurement of electrostatic chucking force in semiconductor wafer processing
US11629409B2 (en) * 2019-05-28 2023-04-18 Applied Materials, Inc. Inline microwave batch degas chamber
KR102312364B1 (ko) * 2019-12-24 2021-10-13 주식회사 테스 기판처리장치
US20220064797A1 (en) * 2020-09-02 2022-03-03 Applied Materials, Inc. Showerhead design to control stray deposition
US11584993B2 (en) 2020-10-19 2023-02-21 Applied Materials, Inc. Thermally uniform deposition station
US11851761B2 (en) * 2021-04-16 2023-12-26 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor processing tool

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6402848B1 (en) * 1999-04-23 2002-06-11 Tokyo Electron Limited Single-substrate-treating apparatus for semiconductor processing system
US6495233B1 (en) * 1999-07-09 2002-12-17 Applied Materials, Inc. Apparatus for distributing gases in a chemical vapor deposition system
KR20050054952A (ko) * 2002-09-19 2005-06-10 어플라이드 머티어리얼즈 인코포레이티드 다구역 저항 히터
KR20060128303A (ko) * 2005-06-10 2006-12-14 주식회사 뉴파워 프라즈마 용량결합형 플라즈마소스 및 수직형 듀얼 프로세스챔버를구비한 플라즈마처리장치
KR20070037507A (ko) * 2004-08-03 2007-04-04 어플라이드 머티어리얼스, 인코포레이티드 플라즈마 강화 화학 기상 증착(ｐｅｃｖｄ) 분야를 위한가열식 가스 박스
KR100726791B1 (ko) * 2005-12-07 2007-06-11 주식회사 뉴파워 프라즈마 복수의 기판을 병렬 배치 처리하기 위한 플라즈마 처리장치
CN102844854A (zh) * 2009-12-18 2012-12-26 应用材料公司 宽范围晶圆温度控制的多功能加热器/冷却器基座
KR20150132416A (ko) * 2013-03-15 2015-11-25 어플라이드 머티어리얼스, 인코포레이티드 전자 디바이스 제조시 기판들을 프로세싱하도록 적응된 프로세싱 시스템들, 장치, 및 방법들
KR20160012942A (ko) * 2014-07-24 2016-02-03 도쿄엘렉트론가부시키가이샤 기판 처리 장치 및 기판 처리 방법

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6300255B1 (en) 1999-02-24 2001-10-09 Applied Materials, Inc. Method and apparatus for processing semiconductive wafers
US6251195B1 (en) * 1999-07-12 2001-06-26 Fsi International, Inc. Method for transferring a microelectronic device to and from a processing chamber
JP2004128019A (ja) 2002-09-30 2004-04-22 Applied Materials Inc プラズマ処理方法及び装置
JP5257424B2 (ja) 2004-04-27 2013-08-07 株式会社Ｓｕｍｃｏ エピタキシャル成長装置
US7622005B2 (en) 2004-05-26 2009-11-24 Applied Materials, Inc. Uniformity control for low flow process and chamber to chamber matching
CN100358099C (zh) * 2005-08-05 2007-12-26 中微半导体设备(上海)有限公司 等离子体处理装置
KR20080012628A (ko) * 2006-08-04 2008-02-12 삼성전자주식회사 기판 처리 장치
US7942969B2 (en) 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components
KR20090001030A (ko) 2007-06-29 2009-01-08 삼성전자주식회사 반도체 제조설비
US8197636B2 (en) * 2007-07-12 2012-06-12 Applied Materials, Inc. Systems for plasma enhanced chemical vapor deposition and bevel edge etching
JP2011527840A (ja) * 2008-07-11 2011-11-04 アプライド マテリアルズ インコーポレイテッド Ｃｖｄに使用されるチャンバ構成要素
KR101089391B1 (ko) 2009-09-23 2011-12-02 주식회사 뉴파워 프라즈마 다중 기판처리챔버
JP2011077147A (ja) 2009-09-29 2011-04-14 Dainippon Screen Mfg Co Ltd 熱処理装置
KR101013492B1 (ko) * 2010-10-28 2011-02-10 (주)세미머티리얼즈 화학기상증착장치 및 이의 제어방법
KR101327458B1 (ko) 2012-01-10 2013-11-08 주식회사 유진테크 냉각 방식의 샤워헤드 및 이를 구비하는 기판 처리 장치
KR101387518B1 (ko) 2012-08-28 2014-05-07 주식회사 유진테크 기판처리장치
US9157730B2 (en) 2012-10-26 2015-10-13 Applied Materials, Inc. PECVD process
KR20210003959A (ko) 2013-03-15 2021-01-12 어플라이드 머티어리얼스, 인코포레이티드 반도체 프로세싱을 위한 챔버 디자인
JP2014220046A (ja) 2013-05-02 2014-11-20 東京エレクトロン株式会社 マイクロ波プラズマ処理装置およびマイクロ波プラズマ源
US10672591B2 (en) 2013-06-21 2020-06-02 Applied Materials, Inc. Apparatus for removing particles from a twin chamber processing system
US20150211114A1 (en) 2014-01-30 2015-07-30 Applied Materials, Inc. Bottom pump and purge and bottom ozone clean hardware to reduce fall-on particle defects
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6402848B1 (en) * 1999-04-23 2002-06-11 Tokyo Electron Limited Single-substrate-treating apparatus for semiconductor processing system
US6495233B1 (en) * 1999-07-09 2002-12-17 Applied Materials, Inc. Apparatus for distributing gases in a chemical vapor deposition system
KR20050054952A (ko) * 2002-09-19 2005-06-10 어플라이드 머티어리얼즈 인코포레이티드 다구역 저항 히터
KR20070037507A (ko) * 2004-08-03 2007-04-04 어플라이드 머티어리얼스, 인코포레이티드 플라즈마 강화 화학 기상 증착(ｐｅｃｖｄ) 분야를 위한가열식 가스 박스
KR20060128303A (ko) * 2005-06-10 2006-12-14 주식회사 뉴파워 프라즈마 용량결합형 플라즈마소스 및 수직형 듀얼 프로세스챔버를구비한 플라즈마처리장치
KR100726791B1 (ko) * 2005-12-07 2007-06-11 주식회사 뉴파워 프라즈마 복수의 기판을 병렬 배치 처리하기 위한 플라즈마 처리장치
CN102844854A (zh) * 2009-12-18 2012-12-26 应用材料公司 宽范围晶圆温度控制的多功能加热器/冷却器基座
KR20150132416A (ko) * 2013-03-15 2015-11-25 어플라이드 머티어리얼스, 인코포레이티드 전자 디바이스 제조시 기판들을 프로세싱하도록 적응된 프로세싱 시스템들, 장치, 및 방법들
KR20160012942A (ko) * 2014-07-24 2016-02-03 도쿄엘렉트론가부시키가이샤 기판 처리 장치 및 기판 처리 방법

Also Published As

Publication number Publication date
WO2017180283A3 (en) 2018-08-23
KR20180123588A (ko) 2018-11-16
TWI707420B (zh) 2020-10-11
JP2019514214A (ja) 2019-05-30
JP6709855B2 (ja) 2020-06-17
US10741428B2 (en) 2020-08-11
WO2017180283A2 (en) 2017-10-19
TW201802991A (zh) 2018-01-16
KR102147782B1 (ko) 2020-08-25
CN109075108A (zh) 2018-12-21
US20170294325A1 (en) 2017-10-12

Similar Documents

Publication Publication Date Title
CN109075108B (zh) 半导体处理腔室
JP7320563B2 (ja) 高温基板台座モジュール及びその構成要素
CN104250728B (zh) 具有气封的化学沉积腔室
JP6268095B2 (ja) 半導体処理におけるエッジリングの熱管理
US20220262657A1 (en) Pedestal with multi-zone heating
US20170092511A1 (en) Loadlock integrated bevel etcher system
KR20230151975A (ko) 가스 시일링을 갖는 화학적 증착 챔버
US20150368830A1 (en) One-piece injector assembly and one-piece exhaust liner
US8968475B2 (en) Substrate processing apparatus
JP5777656B2 (ja) 基板支持装置及び基板処理装置
JP4021864B2 (ja) ウエハー用静電チャック
CN210296330U (zh) 用于处理基板的工艺腔室和静电吸盘
KR102495469B1 (ko) 일괄 처리 챔버
TW202242194A (zh) 基片承載組件、化學氣相沉積設備及吹掃方法
KR20010045897A (ko) 웨이퍼 냉각장치

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant