CN109071876A - 硅倍半氧烷改性的TiO2溶胶 - Google Patents
硅倍半氧烷改性的TiO2溶胶 Download PDFInfo
- Publication number
- CN109071876A CN109071876A CN201680085438.1A CN201680085438A CN109071876A CN 109071876 A CN109071876 A CN 109071876A CN 201680085438 A CN201680085438 A CN 201680085438A CN 109071876 A CN109071876 A CN 109071876A
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- Prior art keywords
- central part
- particle
- titanium
- mercapto
- tio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 49
- 239000000203 mixture Substances 0.000 claims abstract description 43
- 239000002245 particle Substances 0.000 claims abstract description 35
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims abstract description 25
- 238000000034 method Methods 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims abstract description 13
- 239000007795 chemical reaction product Substances 0.000 claims abstract description 4
- -1 alkoxy silane Chemical compound 0.000 claims description 30
- PXQLVRUNWNTZOS-UHFFFAOYSA-N sulfanyl Chemical class [SH] PXQLVRUNWNTZOS-UHFFFAOYSA-N 0.000 claims description 23
- 239000010936 titanium Substances 0.000 claims description 19
- 229910052719 titanium Inorganic materials 0.000 claims description 19
- 150000001875 compounds Chemical class 0.000 claims description 18
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 17
- 229910000077 silane Inorganic materials 0.000 claims description 17
- 239000002243 precursor Substances 0.000 claims description 12
- 239000002253 acid Substances 0.000 claims description 9
- 238000002296 dynamic light scattering Methods 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 125000003396 thiol group Chemical class [H]S* 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 14
- 239000002904 solvent Substances 0.000 description 12
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 10
- 239000010410 layer Substances 0.000 description 10
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 9
- 235000019441 ethanol Nutrition 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 4
- 239000002585 base Substances 0.000 description 4
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 4
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- KOMNUTZXSVSERR-UHFFFAOYSA-N 1,3,5-tris(prop-2-enyl)-1,3,5-triazinane-2,4,6-trione Chemical compound C=CCN1C(=O)N(CC=C)C(=O)N(CC=C)C1=O KOMNUTZXSVSERR-UHFFFAOYSA-N 0.000 description 3
- IKYAJDOSWUATPI-UHFFFAOYSA-N 3-[dimethoxy(methyl)silyl]propane-1-thiol Chemical compound CO[Si](C)(OC)CCCS IKYAJDOSWUATPI-UHFFFAOYSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 230000032683 aging Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000006482 condensation reaction Methods 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- KWFZAAGYIJTNNS-UHFFFAOYSA-N CCCO[Si](C)OCCC Chemical compound CCCO[Si](C)OCCC KWFZAAGYIJTNNS-UHFFFAOYSA-N 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000005864 Sulphur Substances 0.000 description 2
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 2
- 125000001931 aliphatic group Chemical group 0.000 description 2
- 150000001721 carbon Chemical group 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- GAURFLBIDLSLQU-UHFFFAOYSA-N diethoxy(methyl)silicon Chemical compound CCO[Si](C)OCC GAURFLBIDLSLQU-UHFFFAOYSA-N 0.000 description 2
- RSIHJDGMBDPTIM-UHFFFAOYSA-N ethoxy(trimethyl)silane Chemical compound CCO[Si](C)(C)C RSIHJDGMBDPTIM-UHFFFAOYSA-N 0.000 description 2
- ZVJXKUWNRVOUTI-UHFFFAOYSA-N ethoxy(triphenyl)silane Chemical compound C=1C=CC=CC=1[Si](C=1C=CC=CC=1)(OCC)C1=CC=CC=C1 ZVJXKUWNRVOUTI-UHFFFAOYSA-N 0.000 description 2
- CWAFVXWRGIEBPL-UHFFFAOYSA-N ethoxysilane Chemical compound CCO[SiH3] CWAFVXWRGIEBPL-UHFFFAOYSA-N 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- 229940116333 ethyl lactate Drugs 0.000 description 2
- 230000007062 hydrolysis Effects 0.000 description 2
- 238000006460 hydrolysis reaction Methods 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- POPACFLNWGUDSR-UHFFFAOYSA-N methoxy(trimethyl)silane Chemical compound CO[Si](C)(C)C POPACFLNWGUDSR-UHFFFAOYSA-N 0.000 description 2
- ARYZCSRUUPFYMY-UHFFFAOYSA-N methoxysilane Chemical compound CO[SiH3] ARYZCSRUUPFYMY-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000035484 reaction time Effects 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 description 2
- YJTKZCDBKVTVBY-UHFFFAOYSA-N 1,3-Diphenylbenzene Chemical group C1=CC=CC=C1C1=CC=CC(C=2C=CC=CC=2)=C1 YJTKZCDBKVTVBY-UHFFFAOYSA-N 0.000 description 1
- XMWHGHHDUSDZKE-UHFFFAOYSA-N 1-methoxypropan-2-yl acetate 1-phenoxypropan-2-ol Chemical compound COCC(C)OC(C)=O.CC(O)COc1ccccc1 XMWHGHHDUSDZKE-UHFFFAOYSA-N 0.000 description 1
- GFJLJZVUYNFQIR-UHFFFAOYSA-N 1-trimethoxysilylethane-1,2-dithiol Chemical compound CO[Si](OC)(OC)C(S)CS GFJLJZVUYNFQIR-UHFFFAOYSA-N 0.000 description 1
- KWVGIHKZDCUPEU-UHFFFAOYSA-N 2,2-dimethoxy-2-phenylacetophenone Chemical compound C=1C=CC=CC=1C(OC)(OC)C(=O)C1=CC=CC=C1 KWVGIHKZDCUPEU-UHFFFAOYSA-N 0.000 description 1
- BJELTSYBAHKXRW-UHFFFAOYSA-N 2,4,6-triallyloxy-1,3,5-triazine Chemical compound C=CCOC1=NC(OCC=C)=NC(OCC=C)=N1 BJELTSYBAHKXRW-UHFFFAOYSA-N 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- GKTKWAZAGKZHBW-UHFFFAOYSA-N 2-[diethoxy(methyl)silyl]ethanethiol Chemical compound CCO[Si](C)(CCS)OCC GKTKWAZAGKZHBW-UHFFFAOYSA-N 0.000 description 1
- RKBBVTOGABTTHK-UHFFFAOYSA-N 2-[dimethoxy(methyl)silyl]ethanethiol Chemical compound CO[Si](C)(OC)CCS RKBBVTOGABTTHK-UHFFFAOYSA-N 0.000 description 1
- YSKROIVRQKECFT-UHFFFAOYSA-N 2-[methyl(dipropoxy)silyl]ethanethiol Chemical compound SCC[Si](OCCC)(OCCC)C YSKROIVRQKECFT-UHFFFAOYSA-N 0.000 description 1
- PCKZAVNWRLEHIP-UHFFFAOYSA-N 2-hydroxy-1-[4-[[4-(2-hydroxy-2-methylpropanoyl)phenyl]methyl]phenyl]-2-methylpropan-1-one Chemical compound C1=CC(C(=O)C(C)(O)C)=CC=C1CC1=CC=C(C(=O)C(C)(C)O)C=C1 PCKZAVNWRLEHIP-UHFFFAOYSA-N 0.000 description 1
- LWRBVKNFOYUCNP-UHFFFAOYSA-N 2-methyl-1-(4-methylsulfanylphenyl)-2-morpholin-4-ylpropan-1-one Chemical compound C1=CC(SC)=CC=C1C(=O)C(C)(C)N1CCOCC1 LWRBVKNFOYUCNP-UHFFFAOYSA-N 0.000 description 1
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical class S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- LSDPWZHWYPCBBB-UHFFFAOYSA-N Methanethiol Chemical compound SC LSDPWZHWYPCBBB-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- SEEVRZDUPHZSOX-WPWMEQJKSA-N [(e)-1-[9-ethyl-6-(2-methylbenzoyl)carbazol-3-yl]ethylideneamino] acetate Chemical compound C=1C=C2N(CC)C3=CC=C(C(\C)=N\OC(C)=O)C=C3C2=CC=1C(=O)C1=CC=CC=C1C SEEVRZDUPHZSOX-WPWMEQJKSA-N 0.000 description 1
- MCEBKLYUUDGVMD-UHFFFAOYSA-N [SiH3]S(=O)=O Chemical class [SiH3]S(=O)=O MCEBKLYUUDGVMD-UHFFFAOYSA-N 0.000 description 1
- YBHBEZSZXFLQMW-UHFFFAOYSA-N [dimethoxy(phenyl)silyl]methanamine Chemical compound CO[Si](CN)(OC)C1=CC=CC=C1 YBHBEZSZXFLQMW-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 125000005257 alkyl acyl group Chemical group 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- YHWCPXVTRSHPNY-UHFFFAOYSA-N butan-1-olate;titanium(4+) Chemical class [Ti+4].CCCC[O-].CCCC[O-].CCCC[O-].CCCC[O-] YHWCPXVTRSHPNY-UHFFFAOYSA-N 0.000 description 1
- 239000012952 cationic photoinitiator Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- YPHMISFOHDHNIV-FSZOTQKASA-N cycloheximide Chemical compound C1[C@@H](C)C[C@H](C)C(=O)[C@@H]1[C@H](O)CC1CC(=O)NC(=O)C1 YPHMISFOHDHNIV-FSZOTQKASA-N 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- ZZNQQQWFKKTOSD-UHFFFAOYSA-N diethoxy(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](OCC)(OCC)C1=CC=CC=C1 ZZNQQQWFKKTOSD-UHFFFAOYSA-N 0.000 description 1
- ZWTJVXCCMKLQKS-UHFFFAOYSA-N diethoxy(ethyl)silicon Chemical compound CCO[Si](CC)OCC ZWTJVXCCMKLQKS-UHFFFAOYSA-N 0.000 description 1
- ZXPDYFSTVHQQOI-UHFFFAOYSA-N diethoxysilane Chemical compound CCO[SiH2]OCC ZXPDYFSTVHQQOI-UHFFFAOYSA-N 0.000 description 1
- 125000004177 diethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- VSYLGGHSEIWGJV-UHFFFAOYSA-N diethyl(dimethoxy)silane Chemical compound CC[Si](CC)(OC)OC VSYLGGHSEIWGJV-UHFFFAOYSA-N 0.000 description 1
- AHUXYBVKTIBBJW-UHFFFAOYSA-N dimethoxy(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](OC)(OC)C1=CC=CC=C1 AHUXYBVKTIBBJW-UHFFFAOYSA-N 0.000 description 1
- YYLGKUPAFFKGRQ-UHFFFAOYSA-N dimethyldiethoxysilane Chemical compound CCO[Si](C)(C)OCC YYLGKUPAFFKGRQ-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- BNFBSHKADAKNSK-UHFFFAOYSA-N ethyl(dipropoxy)silane Chemical compound CCCO[SiH](CC)OCCC BNFBSHKADAKNSK-UHFFFAOYSA-N 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 235000003642 hunger Nutrition 0.000 description 1
- 210000004276 hyalin Anatomy 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000003301 hydrolyzing effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005305 interferometry Methods 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000003760 magnetic stirring Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- ITNVWQNWHXEMNS-UHFFFAOYSA-N methanolate;titanium(4+) Chemical compound [Ti+4].[O-]C.[O-]C.[O-]C.[O-]C ITNVWQNWHXEMNS-UHFFFAOYSA-N 0.000 description 1
- BKXVGDZNDSIUAI-UHFFFAOYSA-N methoxy(triphenyl)silane Chemical compound C=1C=CC=CC=1[Si](C=1C=CC=CC=1)(OC)C1=CC=CC=C1 BKXVGDZNDSIUAI-UHFFFAOYSA-N 0.000 description 1
- YACCECLVHQLZQK-UHFFFAOYSA-N methoxyperoxyethane Chemical compound CCOOOC YACCECLVHQLZQK-UHFFFAOYSA-N 0.000 description 1
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- PXDRFTPXHTVDFR-UHFFFAOYSA-N propane;titanium(4+) Chemical compound [Ti+4].C[CH-]C.C[CH-]C.C[CH-]C.C[CH-]C PXDRFTPXHTVDFR-UHFFFAOYSA-N 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000007761 roller coating Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- KKCBUQHMOMHUOY-UHFFFAOYSA-N sodium oxide Chemical compound [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 1
- 229910001948 sodium oxide Inorganic materials 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- DZLFLBLQUQXARW-UHFFFAOYSA-N tetrabutylammonium Chemical compound CCCC[N+](CCCC)(CCCC)CCCC DZLFLBLQUQXARW-UHFFFAOYSA-N 0.000 description 1
- JMXKSZRRTHPKDL-UHFFFAOYSA-N titanium ethoxide Chemical compound [Ti+4].CC[O-].CC[O-].CC[O-].CC[O-] JMXKSZRRTHPKDL-UHFFFAOYSA-N 0.000 description 1
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- DENFJSAFJTVPJR-UHFFFAOYSA-N triethoxy(ethyl)silane Chemical compound CCO[Si](CC)(OCC)OCC DENFJSAFJTVPJR-UHFFFAOYSA-N 0.000 description 1
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 description 1
- JCVQKRGIASEUKR-UHFFFAOYSA-N triethoxy(phenyl)silane Chemical compound CCO[Si](OCC)(OCC)C1=CC=CC=C1 JCVQKRGIASEUKR-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K9/00—Use of pretreated ingredients
- C08K9/04—Ingredients treated with organic substances
- C08K9/06—Ingredients treated with organic substances with silicon-containing compounds
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/04—Polysiloxanes
- C09D183/08—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen, and oxygen
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
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Abstract
一种组合物,其包含具有中心部分和至少部分围绕所述中心部分的外部部分的颗粒,其中所述中心部分包含氧化钛,并且所述外部部分包含具有硫醇基的硅倍半氧烷。还提供一种形成所述组合物的方法、反应产物、在物体上形成的有机膜、可辐射固化组合物以及由所述可辐射固化组合物形成的材料。
Description
技术领域
本发明大体上涉及硅倍半氧烷改性的二氧化钛(TiO2)溶胶(胶态固体在液体中的流体悬浮液),形成TiO2溶胶的方法,包含TiO2溶胶的可辐射固化组合物和由可辐射固化组合物形成的材料。具体来说,本发明涉及TiO2溶胶,其中所述TiO2至少部分地被具有硫醇基的硅倍半氧烷覆盖。TiO2溶胶提供高折射率(RI)材料,其可用于在电子元件如氧化铟锡(ITO)电极上的绝缘涂层材料。
背景技术
电子元件通常由有机涂层材料覆盖,以防止其氧化或腐蚀。ITO已被用作触摸屏面板上的透明电极,并且还被有机涂层材料涂覆。通常,将ITO电极安装在玻璃衬底上,然后在ITO电极的表面上施加绝缘材料作为其保护层。通常,丙烯酸或聚硅氧烷型聚合物组合物用于ITO电极的绝缘层,但是这些绝缘层通常使ITO电极可见。原因是这些绝缘层的折射率(1.3-1.5)和ITO的RI(1.6-1.8)非常不同,并且RI方面的差异在绝缘层和ITO之间的界面上引起强烈的光反射,使ITO电极可见。光反射大大降低了显示器的透光率,并且引起显示器的相应较低的视觉效能。因此,期望具有与ITO的RI相同或非常相似水平的RI的绝缘层。
在绝缘层组合物中加入TiO2以增加绝缘层的RI。某些现有技术参考文献公开了包含TiO2的硅氧烷聚合物组合物,例如US8,318,885B、JP3995173B、US7,393,469A、US7,582,358B和US20110262750A。
发明内容
本发明提供具有足够高RI的硅倍半氧烷改性的TiO2溶胶,用于在ITO电极上使用绝缘层,以及形成TiO2溶胶的方法。
本发明的一个方面涉及一种组合物,其包含具有中心部分和至少部分围绕所述中心部分的外部部分的颗粒,其中所述中心部分包含氧化钛,并且所述外部部分包含具有硫醇基的硅倍半氧烷。
另一方面,本发明涉及形成所述组合物的方法,其包含以下步骤:(a)冷凝包含钛前体的组合物以形成包含氧化钛的颗粒,和(b)使颗粒与具有硫醇基的烷氧基硅烷接触。
在另一方面,本发明涉及由以下步骤获得的反应产物:(a)使钛醇盐与酸接触以形成氧化钛颗粒,和(b)使氧化钛颗粒与具有硫醇基的烷氧基硅烷接触。
在另一方面,本发明涉及包含所述颗粒的有机膜。在物体上形成薄膜。
在另一方面,本发明涉及可辐射固化组合物,其包含(a)所述颗粒和(b)具有烯键式不饱和基的化合物和由所述可辐射固化组合物形成的材料。
附图说明
图1是实例1中获得的TiO2颗粒的动态光散射(DLS)曲线。
图2是实例2中获得的TiO2颗粒的DLS曲线。
具体实施方式
本发明的TiO2溶胶包含具有中心部分和外部部分的颗粒。所述中心部分包含TiO2。本发明的TiO2是具有-Ti-O-Ti-键结构的三维聚合物。中心部分由包含钛前体的化合物的水解和缩合反应形成。钛前体的实例包括但不限于四烷基钛,如四异丙基钛、四丁氧基钛、四乙氧基钛和四甲氧基钛。除了氧化钛之外,中心部分可以包含其他金属氧化物,如氧化锆或氧化铪。
中心部分至少部分被外部部分包围。外部部分包含具有硫醇基的硅倍半氧烷。硫醇基对硅倍半氧烷的烷基起作用。因此,具有硫醇基的硅倍半氧烷在本申请中也称为“硫醇官能化的硅倍半氧烷”。用于本发明的硫醇官能化的硅倍半氧烷优选为式(1)的水解缩合组合物:R1R2Si(OR3)2,其中R1和R2独立地选自具有1至8个碳原子的脂族或芳族烃基和硫醇基。R1和R2中的至少一个具有至少一个硫醇基。R3选自具有1至8个碳原子的脂族或芳族烃基。式(1)化合物的实例包括但不限于3-巯基丙基甲基二甲氧基硅烷、3-巯基丙基甲基二乙氧基硅烷、3-巯基丙基甲基二丙氧基硅烷、3-巯基丙基甲基二甲氧基硅烷、2-巯基乙基甲基二甲氧基硅烷、2-巯基乙基甲基二乙氧基硅烷、2-巯基乙基甲基二丙氧基硅烷、2-巯基乙基甲基二甲氧基硅烷和1,2-二巯基乙基三甲氧基硅烷。这些巯基硅烷可以以其混合物形式使用。这些化合物可以公开获得。
除上述化合物之外,三烷基烷氧基硅烷如三甲基甲氧基硅烷、三甲基乙氧基硅烷、三乙基甲氧基硅烷、三乙基乙氧基硅烷、三苯基甲氧基硅烷和三苯基乙氧基硅烷;二烷基二烷氧基硅烷如二甲基二甲氧基硅烷、二甲基二乙氧基硅烷、二乙基二甲氧基硅烷、二乙基二乙氧基硅烷、二苯基二甲氧基硅烷、二苯基二乙氧基硅烷、甲基苯基二甲氧基硅烷和甲基苯基二乙氧基硅烷;烷基三烷氧基硅烷如甲基三甲氧基硅烷、甲基三乙氧基硅烷、乙基三甲氧基硅烷、乙基三乙氧基硅烷、苯基三甲氧基硅烷和苯基三乙氧基硅烷;三烷基烷氧基硅烷如三甲基甲氧基硅烷、三甲基乙氧基硅烷、三乙基甲氧基硅烷、三乙基乙氧基硅烷、三苯基甲氧基硅烷和三苯基乙氧基硅烷可用于调节硫醇官能化硅倍半氧烷的硫醇基的交联密度和/或含量。这些化合物可以公开获得。
中心部分至少部分由硫醇官能化的硅倍半氧烷覆盖。其覆盖百分比可以由TiO2前体与硫醇官能化的硅倍半氧烷的比率控制。
以所述颗粒的重量计,颗粒中TiO2的含量优选为60重量%(重量%)或更多,更优选70重量%或更多。
颗粒的尺寸具有分布。80%颗粒的尺寸为2至150nm。优选地,80%的颗粒的尺寸为2至100nm,更优选为2至50nm。尺寸可以在室温下通过动态光散射(DLS)方法例如使用Malvern Zetasizer Nano ZS测量。
形成TiO2溶胶的方法包括以下两个步骤:(a)冷凝包含钛前体的组合物以形成氧化钛(TiO2)颗粒,和(b)使TiO2颗粒与具有硫醇基的烷氧基硅烷接触。
第一步是冷凝包含钛前体的组合物以形成TiO2颗粒。通常,制备包含钛前体、水和酸的溶液。优选地,钛前体是钛烷氧基化物。以所述溶液计,钛前体的浓度为150至400g/L,优选200至350g/L,更优选250至300g/L。酸可以是有机酸或无机酸。酸的实例包括但不限于盐酸、硫酸、甲酸和乙酸。酸有助于钛烷氧基化物的水解反应。以所述溶液计,酸的浓度为2.5至12.0g/L,优选4.5至8.5g/L.可以使用碱代替酸。溶液任选地包含溶剂,例如甲醇、乙醇或丁醇。在搅拌下将溶液在30至80℃,优选60至80℃下加热以进行水解和缩合反应。反应时间为1.5小时至5小时,优选3至4小时。随着缩合反应的进行,TiO2分散体的尺寸变大。所述反应也称为溶胶-凝胶反应。当获得具有所需尺寸的TiO2颗粒时,第一步完成。
第二个步骤是使TiO2颗粒与具有硫醇基的烷氧基硅烷接触。优选的烷氧基硅烷是二烷氧基硅烷。具有硫醇基的二烷氧基硅烷的实例包括但不限于3-巯基丙基甲基二甲氧基硅烷、3-巯基丙基甲基二乙氧基硅烷、3-巯基丙基甲基二丙氧基硅烷、3-巯基丙基乙基二甲氧基硅烷、3-巯基丙基乙基二乙氧基硅烷和3-巯基丙基乙基二丙氧基硅烷。钛前体与具有硫醇基的烷氧基硅烷的重量比为1:1至4:1,优选为2:1至4:1。所述比率由所需的硫醇基含量和所获得SiO2溶胶的RI决定。通常情况下,TiO2颗粒在搅拌下与具有硫醇基的烷氧基硅烷接触。反应温度为25至65℃,优选为50至65℃。反应时间为1至4小时,优选为2至3小时。
将获得的反应产物冷却至室温,然后任选地保持(老化)12至24小时。任选地,将反应产物的溶剂更换为另一种溶剂,其被用于可辐射固化组合物。用于可辐射固化组合物的溶剂的实例包括但不限于丙二醇单甲基醚(PGME)、丙二醇苯基醚丙二醇单甲基醚乙酸酯(PGMEA)、1-丙氧基-2-丙醇、乳酸乙酯、2-羟基异丁酸甲酯和环己酮。
可以在物体上形成本发明的包含TiO2溶胶的有机膜。可以使用任何物体。物体的实例包括但不限于塑料、金属、玻璃和电子元件,例如ITO电极、布线材料和玻璃或硅衬底。可以通过任何已知的方法如旋涂将包含TiO2溶胶的组合物涂覆在物体上。任选地,将所述组合物干燥以蒸发溶剂。包含颗粒的有机膜的RI为1.65至2.0。优选地,含有颗粒的膜的RI为1.7至1.9。
本发明的可辐射固化组合物包含(A)上文公开的TiO2溶胶和(B)具有烯键式不饱和基的化合物。具有烯键式不饱和基的化合物的实例包括但不限于三烯丙基氰尿酸酯、三烯丙基异氰脲酸酯、三烯丙基氧基-1,3,5-三嗪、四烯丙基季戊四醇醚和三烯丙基丙三醇醚。(A)TiO2溶胶和(B)具有烯键式不饱和基的化合物的量和比率是由TiO2溶胶的硫醇基和具有烯键式不饱和基的化合物的碳-碳双键的摩尔比决定的。TiO2溶胶的硫醇基与具有烯键式不饱和基的化合物的碳-碳双键的摩尔比(TiO2溶胶的硫醇基/具有烯键式不饱和基的化合物的碳-碳双键)应为0.2至2.0,优选所述摩尔比为0.3至1.1。
可辐射固化组合物可进一步包含光引发剂(PI)。可以使用任何已知的光引发剂如肟酯型光引发剂,烷基酰苯型光引发剂和阳离子型光引发剂如锍盐或碘鎓盐。所述PI的实例包括但不限于IrgacureOXE-01、Irgacure OXE-02、Irgacure 379、Irgacure 651、Irgacure 127和Irgacure 907。
以TiO2溶胶和具有烯键式不饱和基的化合物的总重量计,组合物中的PI的量为0.001至3.0重量%。优选地,以TiO2溶胶和具有烯键式不饱和基的化合物总重量计,所述PI的量为0.01至1.0重量%,更优选为0.1至0.5重量%。
可辐射固化组合物可进一步包含至少一种溶剂。溶剂的实例包括但不限于丙二醇单甲醚(PGME)、丙二醇苯基醚丙二醇单甲醚乙酸酯(PGMEA)、1-丙氧基-2-丙醇、乳酸乙酯、2-羟基异丁酸甲酯和环己酮。以TiO2溶胶和具有烯键式不饱和基的化合物的总重量计,溶剂的总量为25至900重量%。优选地,以TiO2溶胶和具有烯键式不饱和基的化合物的总重量计,溶剂的总量为150至400重量%。
可辐射固化组合物可以施加到电子元件上。可以使用任何已知的方法将组合物施加到电子元件上。所述方法的实例包括在电子元件上旋涂、辊涂和喷涂组合物,或在组合物中浸渍电子元件。
然后将组合物曝光于辐射以交联TiO2溶胶的硫醇基和具有烯键式不饱和基的化合物的烯键式不饱和基。曝光可以通过例如使用300至400nm的光和总曝光量为50至10,000mJ/cm2的UV光进行。使用图案掩模进行曝光以获得电子元件上所需的图案。然后,未曝光区域通过称为显影剂的显影组合物洗去。显影剂的实例包括但不限于包含氢氧化钾、氢氧化钠、氢氧化四甲铵和氢氧化四丁基铵的碱性溶液。任选地,可以将曝光的化合物进一步加热至20至80℃,持续1分钟至24小时。
曝光后,可辐射固化组合物被固化并且形成硬化材料。硬化材料可用于在电子元件上形成绝缘层(有机涂层)。电子元件的实例包括但不限于ITO电极和用于LCD装置、OLED装置的ITO电极的布线材料,和触摸屏传感器面板。布线材料包括铜、银和含铜或银的金属合金。由本发明的组合物形成的有机涂层具有更高的RI,因此其对ITO电极上的绝缘层特别有用。
实例
实例中使用表1中所示的原料。
表1
实例1(本发明实例)
将异丙醇钛(IV)(28.4g)和乙醇(40g)在容器中混合,并且转移到带有磁力搅拌棒的三颈烧瓶中。将混合物的温度升至80℃,然后通过注射泵将HCl溶液(EtOH中1mol/L的14.2g)、水(3.6g)和乙醇(40g)的混合物缓慢加入烧瓶中。添加之后,将溶液搅拌3小时。获得透明的TiO2溶液。然后,将温度降至65℃。将3-巯基丙基甲基二甲氧基硅烷(5.24g)加入所述溶液中。将溶液在65℃下搅拌3小时。之后,将溶液冷却至室温。将溶液在室温下老化15小时,并且通过PGME更换溶剂。将TiO2颗粒分散在PGME中,形成具有25重量%的固体含量的视觉上半透明的浅黄色溶液。将形成的TiO2溶液分散在乙醇中,然后在室温下通过动态光散射(DLS,Malvern Zetasizer Nano ZS)测量TiO2颗粒的尺寸。DLS曲线如图1所示。
通过PGME将PGME中的TiO2颗粒(固体含量为25重量%)稀释至15重量%,然后通过旋涂流将其浇铸到玻璃板上。蒸发溶剂,然后获得0.9微米厚的透明膜。使用椭偏仪测量膜在550nm下的折射率(RI)。RI值为1.70。通过紫外-可见(UV)光谱仪分析膜的透明度。透光率在550nm下为96%,并且在365nm下为88%。
实例2(比较实例)
除了使用5.67g的3-巯基丙基三甲氧基硅烷(KH550)代替3-巯基丙基甲基二甲氧基硅烷之外,进行与实例1相同的过程。老化15小时后,TiO2聚集并且沉淀出白色固体。合成的TiO2溶胶不够稳定。DLS曲线如图2所示。
实例3-5
制备包含实例1中获得的TiO2溶胶、三烯丙基异氰脲酸酯、Irgacure-279(光引发剂)和溶剂的组合物。实例3的TiO2溶胶与三烯丙基异氰脲酸酯的比率为60/40重量%,实例4和5的为80/20重量%。溶剂是具有按重量计20/80的PGMEA和PGME的混合物,并且以TiO2和异丙基异氰脲酸酯的总重量计,所述光引发剂的量为0.3重量%。实例3中的TiO2的硫醇基与三烯丙基异氰脲酸酯的烯丙基的摩尔比为25/75,实例4和5的摩尔比为47/53。固体含量为0.29。
将组合物旋涂在玻璃衬底上。在软烘烤过程之后调节旋转速度以获得1.8μm的膜厚度。在涂层工具的接近热板上施加90℃的软烘烤120秒。通过光干涉法(Lambda-A VL-M6000-LS,Screen)测量膜厚度。对于实例3和4,将涂层衬底在120℃下(硬烘烤)在对流烘箱中烘烤并固化60分钟。对于实例5,在硬烘烤之前进行曝光和显影步骤。通过宽带接近曝光工具(MA-1200,Dainippon Kaken)以600mJ/cm2的曝光剂量曝光涂层衬底。通过i线传感器(UV-M03A,Orc Manufacturing Co.,)测量集成曝光能量。使用光掩模(Multitonetestpattern mask,Benchmark Technologies)获得光图案。在曝光过程之后,通过2.38重量%TMAH(四甲基氢氧化铵)含水溶液将衬底显影60秒。在水冲洗和旋转干燥过程之后,在对流烘箱中施加120℃的硬烘烤固化60分钟。使用椭偏仪测量在500nm、550nm和600nm(波长)下获得的膜的折射率。所述值在表2中示出。
表2
(波长nm) | 实例3 | 实例4 | 实例5 |
500 | 1.698 | 1.743 | 1.678 |
550 | 1.687 | 1.730 | 1.721 |
600 | 1.678 | 1.721 | 1.698 |
Claims (12)
1.一种组合物,其包含具有中心部分和至少部分围绕所述中心部分的外部部分的颗粒,其中所述中心部分包含氧化钛,并且所述外部部分包含具有硫醇基的硅倍半氧烷。
2.根据权利要求1所述的组合物,其中以所述颗粒的重量计,所述氧化钛的含量为60重量%或更多。
3.根据权利要求1所述的组合物,其中通过动态光散射方法测量,至少80%的所述颗粒的直径为2至150nm。
4.一种形成根据权利要求1所述的组合物的方法,其包含以下步骤
(a)冷凝包含钛前体的组合物以形成包含氧化钛的颗粒,和
(b)使所述颗粒与具有硫醇基的烷氧基硅烷接触。
5.根据权利要求4所述的方法,其中所述烷氧基硅烷是二烷氧基硅烷。
6.根据权利要求4所述的方法,其中所述钛前体是钛烷氧基化物。
7.根据权利要求4所述的方法,其中钛前体与烷氧基硅烷的重量比为1:1至4:1。
8.一种由以下步骤获得的反应产物:
(a)使钛醇盐与酸接触以形成氧化钛颗粒,和
(b)使所述氧化钛颗粒与具有硫醇基的烷氧基硅烷接触。
9.一种在物体上形成的有机膜,其包含具有中心部分和至少部分围绕所述中心部分的外部部分的颗粒,其中所述中心部分包含氧化钛,并且所述外部部分包含具有硫醇基的硅倍半氧烷。
10.根据权利要求9所述的有机膜,其中所述膜的折射率为1.65至2.0。
11.一种可辐射固化组合物,其包含(A)具有中心部分和至少部分围绕所述中心部分的外部部分的颗粒,其中所述中心部分包含氧化钛,并且所述外部部分包含具有硫醇基的硅倍半氧烷和(B)具有烯键式不饱和基的化合物。
12.一种材料,其由根据权利要求11所述的可辐射固化组合物形成。
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