CN109023230A - 一种质量厚度为700-1000μg/cm2自支撑锡薄膜及其制备方法 - Google Patents
一种质量厚度为700-1000μg/cm2自支撑锡薄膜及其制备方法 Download PDFInfo
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- CN109023230A CN109023230A CN201810933397.8A CN201810933397A CN109023230A CN 109023230 A CN109023230 A CN 109023230A CN 201810933397 A CN201810933397 A CN 201810933397A CN 109023230 A CN109023230 A CN 109023230A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
- C23C14/325—Electric arc evaporation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0005—Separation of the coating from the substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
- C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5873—Removal of material
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
实施例1 | 对比例1 | 实施例2 | 对比例2 | |
残余应力(MPa) | 174 | 486 | 168 | 471 |
Claims (9)
Priority Applications (1)
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CN201810933397.8A CN109023230B (zh) | 2018-08-16 | 2018-08-16 | 一种质量厚度为700-1000μg/cm2自支撑锡薄膜及其制备方法 |
Applications Claiming Priority (1)
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CN201810933397.8A CN109023230B (zh) | 2018-08-16 | 2018-08-16 | 一种质量厚度为700-1000μg/cm2自支撑锡薄膜及其制备方法 |
Publications (2)
Publication Number | Publication Date |
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CN109023230A true CN109023230A (zh) | 2018-12-18 |
CN109023230B CN109023230B (zh) | 2020-04-24 |
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CN201810933397.8A Active CN109023230B (zh) | 2018-08-16 | 2018-08-16 | 一种质量厚度为700-1000μg/cm2自支撑锡薄膜及其制备方法 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114442441A (zh) * | 2022-02-23 | 2022-05-06 | 南京大学 | 一种激光等离子体极紫外光源靶材的优化方法 |
Citations (8)
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---|---|---|---|---|
JPH0911699A (ja) * | 1996-05-30 | 1997-01-14 | Nikka Techno:Kk | 虹彩転写材 |
CN1391242A (zh) * | 2001-06-08 | 2003-01-15 | 株式会社村田制作所 | 金属膜及其制备方法,层压陶瓷电子元件及其制备方法 |
JP2006352079A (ja) * | 2005-03-22 | 2006-12-28 | Sumitomo Chemical Co Ltd | 自立基板、その製造方法及び半導体発光素子 |
CN103589999A (zh) * | 2013-11-06 | 2014-02-19 | 北京大学 | 一种自支撑类金刚石纳米薄膜制备装置及薄膜制备方法 |
WO2014037380A1 (en) * | 2012-09-04 | 2014-03-13 | MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. | Method and apparatus for the fabrication of nanostructures, network of interconnected nanostructures and nanostructure |
CN105977135A (zh) * | 2016-05-19 | 2016-09-28 | 西安电子科技大学 | 基于二硫化锡和磁控溅射氮化铝的氮化镓生长方法 |
CN106544629A (zh) * | 2017-01-19 | 2017-03-29 | 中国工程物理研究院激光聚变研究中心 | 一种大尺度自支撑铍薄膜的制备方法及装置 |
CN107142449A (zh) * | 2017-05-04 | 2017-09-08 | 中国工程物理研究院激光聚变研究中心 | 一种高精度极小尺寸自支撑铍薄膜的制备方法 |
-
2018
- 2018-08-16 CN CN201810933397.8A patent/CN109023230B/zh active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0911699A (ja) * | 1996-05-30 | 1997-01-14 | Nikka Techno:Kk | 虹彩転写材 |
CN1391242A (zh) * | 2001-06-08 | 2003-01-15 | 株式会社村田制作所 | 金属膜及其制备方法,层压陶瓷电子元件及其制备方法 |
JP2006352079A (ja) * | 2005-03-22 | 2006-12-28 | Sumitomo Chemical Co Ltd | 自立基板、その製造方法及び半導体発光素子 |
WO2014037380A1 (en) * | 2012-09-04 | 2014-03-13 | MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. | Method and apparatus for the fabrication of nanostructures, network of interconnected nanostructures and nanostructure |
CN103589999A (zh) * | 2013-11-06 | 2014-02-19 | 北京大学 | 一种自支撑类金刚石纳米薄膜制备装置及薄膜制备方法 |
CN105977135A (zh) * | 2016-05-19 | 2016-09-28 | 西安电子科技大学 | 基于二硫化锡和磁控溅射氮化铝的氮化镓生长方法 |
CN106544629A (zh) * | 2017-01-19 | 2017-03-29 | 中国工程物理研究院激光聚变研究中心 | 一种大尺度自支撑铍薄膜的制备方法及装置 |
CN107142449A (zh) * | 2017-05-04 | 2017-09-08 | 中国工程物理研究院激光聚变研究中心 | 一种高精度极小尺寸自支撑铍薄膜的制备方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114442441A (zh) * | 2022-02-23 | 2022-05-06 | 南京大学 | 一种激光等离子体极紫外光源靶材的优化方法 |
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Effective date of registration: 20200602 Address after: 233700 No.9, Niushi West Lane, Beimen, Cuihu garden, Chengguan Town, Guzhen County, Bengbu City, Anhui Province Patentee after: Guzhen Kean Chuangbing Information Technology Co.,Ltd. Address before: 510530 Guangzhou High-tech Industrial Development Zone, Guangzhou, Guangdong Province, 72 Science Avenue, building C2, the first, second and third floors of green space International Creator Center office card A176 Patentee before: GUANGZHOU BENKANG ENVIRONMENTAL PROTECTION TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20211009 Address after: 271000 high end talent entrepreneurship base in the middle of Nantianmen street, high tech Zone, Tai'an City, Shandong Province Patentee after: Taian Zhongquan Information Technology Co.,Ltd. Address before: 233700 No. 9 Niushi West Lane, north gate of Cuihu garden, Chengguan Town, Guzhen County, Bengbu City, Anhui Province Patentee before: Guzhen Kean Chuangbing Information Technology Co.,Ltd. Effective date of registration: 20211009 Address after: 271000 China Taishan high-end talent entrepreneurship base in the middle of Nantianmen street, development zone, Tai'an City, Shandong Province Patentee after: Taian Taishan Technology Co.,Ltd. Address before: 271000 high end talent entrepreneurship base in the middle of Nantianmen street, high tech Zone, Tai'an City, Shandong Province Patentee before: Taian Zhongquan Information Technology Co.,Ltd. |